CN106415811B - Method and apparatus for permanent engagement - Google Patents
Method and apparatus for permanent engagement Download PDFInfo
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- CN106415811B CN106415811B CN201580023049.1A CN201580023049A CN106415811B CN 106415811 B CN106415811 B CN 106415811B CN 201580023049 A CN201580023049 A CN 201580023049A CN 106415811 B CN106415811 B CN 106415811B
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- 238000000034 method Methods 0.000 title claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 171
- 230000010355 oscillation Effects 0.000 claims description 43
- 230000001965 increasing effect Effects 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000011068 loading method Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 description 36
- 230000008569 process Effects 0.000 description 30
- 238000001953 recrystallisation Methods 0.000 description 22
- 230000035882 stress Effects 0.000 description 21
- 238000007906 compression Methods 0.000 description 20
- 239000013078 crystal Substances 0.000 description 19
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- 238000005452 bending Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
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- 238000005516 engineering process Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000000994 depressogenic effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
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- 230000000694 effects Effects 0.000 description 4
- 230000013011 mating Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011469 building brick Substances 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 230000000737 periodic effect Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910015894 BeTe Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 230000005484 gravity Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
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- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910006592 α-Sn Inorganic materials 0.000 description 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/449—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of mechanical vibrations, e.g. ultrasonic vibrations
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L21/607—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of mechanical vibrations, e.g. ultrasonic vibrations
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
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- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8303—Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83205—Ultrasonic bonding
- H01L2224/83206—Direction of oscillation
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- H01L2224/838—Bonding techniques
- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/83895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20108—Temperature range 300 C=<T<350 C, 573.15K =<T< 623.15K
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of methods of first layer (2) for the first substrate (1) and the second layer of the second substrate (1') (2') permanent engagement on joint interface (5), it is characterized in that, before the engagement and/or period, at least increase in the region of the joint interface (5) this first and/or the second layer (2,2') dislocation (4) dislocation density.In addition, the present invention relates to a kind of corresponding devices.
Description
Technical field
The present invention relates to it is a kind of according to the method for claim 1 with a kind of device according to claim 6.
Background technique
In the method known to the name engaged with chip, (it will be especially made of material silicon, quartz or any other material
) two substrate, especially chips are connected to each other.Here, being distinguished first between temporary joint and permanent engagement.Temporarily
Engagement is understood to following all methods, two substrates, two outstanding chip is connected to each other in the method, so that not
It can stablize and handle product substrate in the case where being detached from from carrier substrates, but again can be targeted when process links beam
Ground removes product substrate from carrier substrates.And in the case where permanent engagement, generate it is lasting, be no longer able to the connection stopped
Purpose in the case where two substrates, especially chip are engaged with each other.
The understanding for a possibility that providing to permanent engagement is provided.It is that chip engagement can be such as in system technology micro-
It is used to for the chip with chamber being bonded to the second chip equipped with micromechanics and micro-optical components to protect these components.Forever
Engagement also be used to establish with so-called direct joint method permanently connected between silicon face or silicon oxide surface long.In addition,
Using diffusion bonding or the permanent engagement method of eutectic bonding, numerous metal surface can also be permanently connected to each other.This
A little metal coverings are not necessarily as comprehensive coating and are applied on chip, but can be by multiple offices for being distributed on entire chip
The limited coating composition in portion.In particular, the coating of such local restricted being distributed on entire chip can by dielectric material,
Especially silica surrounds.Then, such surface is known as blending surface.Blending surface is right each other in permanent engagement method
It is quasi- and be engaged with each other, so that conductive metal face and dielectric regions are engaged with each other.It is achieved in the feelings for establishing conductive connection at the same time
The stacking of multiple substrates under condition.
Therefore there are a variety of different joint methods, in addition to actual engagement method, a variety of different joint methods
Difference lie also in a variety of different material types of chip to be connected.Current used permanent engagement side for metal
The significant drawback of method is, only by very high heat supply and/or very high pressure, engaging process just leads to satisfied engagement knot
Fruit.The very high thermal stress is also particularly disadvantageous and cost intensive in terms of economic work.In addition, the building of mating system
Be with production it is correspondingly difficult, the mating system must apply correspondingly high pressure, so as to comprehensive and uniform
Mode is engaged with each other increasing chip is become.If allowing arbitrarily to construct corresponding mating system, the engagement greatly
The manufacture of system will substantially not be a problem.But mating system must have it is certain, especially by semi-conductor industry in advance to
Fixed size, and therefore accordingly must compactly be fabricated.
In addition to except the increased energy requirement being previously mentioned the shortcomings that, substrate material also makes increased heat supply different anti-
It answers, wherein substrate material has a common ground.Heat supply is adversely affected at used substrate material always and may also lead to serve as a contrast
Bottom and complete breaking-up particular on the structure on substrate.
Summary of the invention
Therefore being based on for task of the invention is to develop a kind of method, and this method makes it possible to as far as possible in no heat supply
In the case where, ideally realize the lasting connections of two substrate surfaces, two outstanding metal surface at room temperature.
According to the present invention, the surface of substrate to be engaged with each other can be made of conductive material, non-conducting material or can be with
With mixed characteristic.Especially, it is proposed, according to the invention, joint method is understood to method as follows, the method be used for by
Blending surface is connected to each other.As explained, blending surface is understood at least non-conductive by a kind of conductive material and one kind
The surface of material composition.Here, preparing conductive material according to according to the embodiment of the present invention for engaging process, rather than leading
Ammeter face can be engaged with each other according to known engagement mechanisms.But to by means of embodiment as simple as possible illustrate by
According to embodiments of the present invention, the complete of entire substrate is extended in further preferably refer in the process of application text
The metal surface in face.In addition, only showing the comprehensive metal surface for extending entire substrate in figure.
The invention particularly relates to permanent Cu-Cu engagements.The method according to the invention substantially extends to all other material
Material and combination of materials, wherein can produce the recrystallization for preferably resulting in structure by means of according to the embodiment of the present invention
At least metastable state.In addition to engagement only two substrates, it is often desired to which formation can use the method according to the invention manufacture
Substrate storehouse.Exactly in the manufacture of this substrate storehouse it is necessary that the case where considering material type and existing chamber
The sequence of the optimization of lower determining split.It is particularly preferred that metastable state is generated by increased dislocation density.According to the present invention
Embodiment be particularly applicable to:
Metal, especially
- Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Te、Sn、Zn
Alloy,
Semiconductor (has corresponding doping), especially
Elemental semiconductor, preferably
- Si, Ge, Se, Te, B, α-Sn,
Compound semiconductor, preferably
- GaAs、GaN、InP、InxGa1-xN、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2、
ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGa1-xAs、GaS、GaSe、GaTe、
InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC、SiGe。
Especially in the engagement of the substrate of the functional unit with such as microchip, storage chip or MEM etc, engagement
Process should advantageously execute at low temperature, to exclude or minimize the damage to electronic building brick.In addition, passing through low temperature method
Damage caused by the intrinsic thermal stress by the difference of the thermal expansion coefficient based on different materials is excluded to the full extent.
In particular, the substrate of substrate, particularly the functional unit with such as microchip, memory module, MEM etc. is in actual engagement
It is aligned with each other before process.Exactly alignment procedures (English: alignment) are especially important in engaging process, because
Only correctly it is directed at and contacts the functionality for just ensuring electronic building brick.By a variety of different materials with the different coefficients of expansion
Expect to be greatly simplified alignment in the low temperature engagement of two chips constituted, because being somebody's turn to do there is no the temperature difference or there is only the very little temperature difference
The temperature difference leads to the different expansions of two substrates being especially made of different materials.The accuracy of the alignment executed at room temperature is therefore
It keeps in low temperature engagement or only tinily changes.Therefore it can ignore the factor of alignment that influences to the full extent, such as expand
Coefficient.Have the drawback that engagement is more difficult than in the engaging process with higher temperature (400 DEG C) using temperature low in this way
Much.
Therefore, the task of the present invention is a kind of method and a kind of device related with this is pointed out, even if the device is in low temperature
Under, preferably at room temperature also realize chip engagement.
Basic conception of the invention in particular, in that, realize in engagement, especially Cu-Cu engagement and spread on joint interface
Recrystallization.In recrystallization, especially occur to regenerate by crystal grain and the grain growth of the extension of grain boundary that is newly formed with/
Or structure reconstruction.Therefore, recrystallization is understood to regenerate by crystal grain and/or the structure of grain growth regenerates.In two substrates
Engagement in, structure regeneration is carried out preferably over joint interface so that continuous structure result from two substrates to be joined,
It is especially deposited between the layer on substrate.
During further, no longer distinguished between substrate surface and the surface for the layer being deposited on substrate.
It can be synonymously using two kinds of expression.
In particular, first and/or the second layer can be the component part of the first and/or second substrate.
According to the present invention, for material, the recrystallization especially in metal under neutral temperature, it is close that high dislocation is equipped with to material
Degree generates or selects the material with high dislocation density.Dislocation density is especially greater than 107 cm-2, preferably more than 109 cm-2,
Also preferably it is greater than 1011 cm-2, also preferably it is greater than 1013 cm-2, most preferably more than 1015 cm-2, the most preferably
Greater than 1017 cm-2.Dislocation be understood to or material deposition when generate or can be afterwards by the plastic deformation of crystal
The one dimensional lattice defect of generation.Material with correspondingly high dislocation density is particularly at least metastable state, and can pass through
Thermal activation is prevented from passing through dislocation reduction (Versetzungsabbau) and is transferred to compared with low-energy state.Dislocation is reduced herein preferably
It is carried out by recrystallization at relatively high temperatures, and results then in structure reconstruction.According to the present invention, dislocation reduction can be substituted
Ground is carried out by repairing (Ausheilung) or crystal recovery at a lower temperature.But, in crystal recovery, do not lead to
The structure reconstruction of recrystallization is crossed, but the recombination of dislocation only occurs.It is not expected according to the present invention and this process should be avoided.
Particularly by the increase for carrying out dislocation density according to the embodiment of the present invention, Dislocations are not only by ultrasound
Individual impulse hunting and/or continual oscillation within the scope of wave is to realize.Individual impulse hunting be understood into
The disposable load being more fully described during one step.Continual oscillation is especially understood to multiple such negative
Lotus.Impulse hunting especially covers the whole bandwidth from high frequency up to low-frequency oscillation.According to the present invention, the frequency of oscillation particular between
1 Hz and 109Between Hz, it is preferably ranges between 10 Hz and 108Between Hz, also preferably between 100 Hz and 107Between Hz,
Most preferably between 104Hz and 106Between Hz.Pass through connecing for oscillation embodiment and substrate to be joined according to the invention
Higher-order of oscillation mechanical load is realized in touching, on surface to be joined, is especially deposited in the material on substrate and is generated corresponding position
Dislocation density.By being engaged with alap pressure with preferably two substrate surfaces of alap temperature contact, realization
Especially exceed the recrystallization of the structure of joint interface in the process.
In order to execute recrystallization at alap temperature, not only dislocation density and also recrystallize material purity
It should be as high as possible.For technical purpose, purity is optimally illustrated with mass percent (m%).According to the present invention, material it is pure
Degree is especially greater than 95 m%, preferably more than 99 m%, is also preferably greater than 99.9 m%, most preferably more than 99.99 m%, most
Most preferably more than 99.999 m%.
According to the present invention, the grain size of recrystallization texture is especially less than 1000 nm before recrystallization, preferably less than
500 nm, also preferably less than 100 nm, more preferably less than 50 nm, the most preferably less than 10 nm.According to the present invention,
The grain size of recrystallization texture is especially greater than 10 nm, preferably more than 100 nm after re-crystallization, is also preferably greater than
500 nm, most preferably more than 500 nm, the most preferably more than 1000 nm.In a kind of very particularly preferred embodiment
In, the thickness of the crystal grain formed by recrystallization and being of uniform thickness greatly for the structure through recrystallizing.
In order to increase before recrystallization and/or during and/or after atom mobility, structure, which preferably possesses, to the greatest extent may be used
The big point defect density of energy, especially vacancy concentration.Increased vacancy number improves displacement diffusion and therefore facilitates to be joined
The improved connection on two surfaces.According to the present invention, vacancy concentration is especially greater than 10-12, preferably more than 10-10, more typically
Ground is greater than 10-8, most preferably more than 10-6, the most preferably more than 10-4.About 10-4Vacancy concentration near fusing point
Constitute the typical boundary value of the vacancy concentration of metal.
In addition, it is contemplated that the concave surface of sample frame or the bottom surface heater of the bottom surface for heating substrate shapes (konkave
Ausformung), the sample frame or bottom surface heater are allowed in the press-bending of the chip in micron range/sagging.Concave surface forming
Allow the press-bending of chip.By the press-bending, it especially can produce extra-stress load under the high-frequency load of chip and therefore have
It generates in chip sharply, the increase of dislocation density in the layer especially on chip.In particular, the press-bending of chip chip closer to
Tensile load is generated in region near the surface of concave surface forming, and the surface of chip to oppose with concave surface forming is answered due to compression
Power and by load.The pulling force or compression stress generated by bend loading reduces on the direction of the neutral conductor.In particular, tensile stress or pressure
The maximum value of stress under compression can be found on a surface of the wafer.Due to the small thickness of chip, the tensile stress or pressure generated by bending
Although stress under compression very little, but still there can be front effect to the composition according to the invention of the metastable state of one of two layers
It answers.
The structure height that the compression device of the pressurization of substrate storehouse can will be used for particularly with the use of piezo technology is protected
It holds to be low, and therefore integrated into the device according to the invention is not a problem.It is mutual to be related to engaged two chips
The result being currently known that this method of adhesion will be engaged approximatively close to the high temperature about adhesion.
One important advantage is, the sensitive electronic building brick of Partial Height being located on chip occurs during engagement
Significantly lower thermic load, and therefore to the full extent exclude or significantly reduce can not repair damage a possibility that.Pass through
Lower junction temperature also gives significantly lower energy consumption.High throughput is realized in addition, engaging by low temperature, because can
Give up the cooling of the time intensive of the chip engaged.
Task of the invention lies also in displaying can be how in micron size and/or the structure of nanosized, especially metal
The middle increase for generating dislocation density.
According to the present invention, dislocation density increases mainly by means of the ultrasonic wave in structure.Subject of the present invention is especially
It is a kind of that at least the device with oscillator device can be by the structure in region to be engaged with each other with the help of the oscillator device
Metastable energy state is led to, so that obtaining improved splicing results.In particular, by increasing by two according to the embodiment of the present invention
Dislocation density in the region of at least one of substrate.It according to the embodiment of the present invention can be before the contact of substrate
And/or it is applied to substrate surface later.It is particularly preferred that the generation according to the invention of dislocation density only two substrates that
It is just carried out after this contact.But according to the present invention it can also be envisaged that generation dislocation is close before contact or before contact and later
Degree.
The device preferably has thermostat, and it is according to the invention to heat this in a controlled manner using the thermostat
Device, and wherein junction temperature advantageously changes in the range of from room temperature to significantly lower than 300 DEG C.Controlled heating is alternatively
It can be undertaken by control technology, which especially also considers other process phases according to substrate material in formula ready for use
Close parameter.It can also be envisaged that being engaged with each other with processing in the furnace of the independent outside separated according to the embodiment of the present invention
Substrate.It particularly preferably will then be related to continuous furnace.
It is preferably following device according to the embodiment of the present invention, described device can will be preferably entire by oscillation
Substrate or the substrate storehouse being connected to each other and engaging in advance at least partly lead to metastable state.According to the present invention, vibration
It swings and can be the oscillation with unique period or multiple periods.
Change it is particularly preferred that being introduced directly into dislocation by the device according to the invention during engaging process and generating with structure
It builds.Thus it can be prevented that: generated metastable state is eliminated again by relaxation process before engaging process
(abgebaut) and it is no longer available during engaging process.Certainly, it is also contemplated that in the first two substrate of engaging process extremely
The foundation of metastable state according to the invention in few one and after contact, the especially metastable state during engaging process
Second additional or generation or enhancing afterwards.Especially, it is proposed, according to the invention, can refer to caused by being imported by macroforce in microstage
(microlevel) and/or the friction welding process on nanoscale (nanolevel).
In particular, preferably independent aspect of the invention is, substrate storehouse is supported on sample frame, the sample frame with
The mode of oscillation and/or the deformation of first and/or the second layer is allowed to be constructed.This especially can be by being especially only arranged to try
It carries out on the periphery of sample rack and/or oscillating body for supporting the fixing bearing of sample frame and/or oscillating body.
Preferably, make two substrates to be connected aligned with each other within aligned units (alignment modules).Special right
During standard, the radial periphery of two substrates centre especially centered on substrate towards substrate is contacted.
According to the present invention, dislocation is preferably generated by the introducing of mechanical shear stress.It is answered by what is applied in outside
Power load and these shear stress are generated in crystal grain.
The generation of dislocation density according to the invention can or before contact, after contact but before splicing
Or it is carried out after contact by each of following implementation according to the invention during engagement.
In first embodiment according to the invention, dislocation density is generated by the oscillating element of concentration of local.At this
According to the embodiment of the present invention, oscillation is generated by oscillating element, which is especially made in a manner of local restricted
Substrate or substrate storehouse are by load.Oscillating element can be especially excited in electric, mechanical, pneumatic or hydraulic mode.Especially
Preferably, be related to can electric excitation piezoelectric vibration device.Furthermore, it is also contemplated that and require alignment modules, oscillator device and/or to
Engagement the possible of chamber for heating is spatially separating.But can only indicate, just also clearly require aforementioned device in group
Combination within collection.Similarly, it is desirable that the sequence of each method and step.In very particularly preferred embodiment, only pass through
Oscillating element has carried out two substrates and has passed through the engagement of the recrystallization at the position for being subjected to load by oscillating element.?
In another preferred embodiment, oscillating element only increases dislocation density, without causing to recrystallize immediately and therefore cause immediately
Engagement.Then, it actual engagement process or is carried out in furnace and/or in the engagement chamber of oneself, it is entire in engagement chamber
Substrate storehouse comprehensively can be pressurized and/or heat again.
It is other according to the embodiment of the present invention in, substrate or substrate storehouse are placed in oscillation, outstanding in comprehensive manner
It is bent in oscillation and/or serious oscillation (Schwerschwingung).Substrate or substrate storehouse are lain on sample frame herein
And it is fixed on the side opposite with sample frame with being especially pressurized by pressure plare or similar the device according to the invention.Later
Realize the power of the oscillation of whole surface that is according to the invention, especially local and/or not covering substrate or substrate storehouse at least
Load.Entire substrate or entire substrate storehouse are placed in oscillation by the power load.Here, sample frame and/or pressure plare especially by
Designed for that itself can vibrate together.It can also be envisaged that using stable and thick sample frame and stable pressure plare, to generate
The oscillatory shear load of substrate or substrate storehouse.It is similar to consider to be suitable for torque load, but the torque load be based on substrate or
The radial dependence of the deformation at the center of substrate storehouse is without constituting preferred embodiment.
In another embodiment according to the invention, the generation of metastable equilibrium, the especially layer rich in dislocation is based on static state
The use of sample frame and/or static non-planar pressure plare.Sample frame and/or pressure plare herein preferably concave surface and/or convex surface at
Shape.It in a kind of special embodiment, is shaped by elastic material, although the elastic material is under unloaded state
With flat surfaces, but can correspondingly concave surface and/or convex surface deformation under pressure load.By the forming possibility, equally
Forcing substrate storehouse is spill and/or convex, this leads to the corresponding load of substrate storehouse and surface therefore to be engaged with each other.Especially
Its, and it is already mentioned above different according to the embodiment of the present invention, the compression of substrate storehouse dynamically vibrated is not realized
Load, but realize pure static, the especially comprehensive compression load of substrate storehouse.
In very special embodiment according to the invention, the elasticity of sample frame is used to according to the invention
Aspect.Sample frame has certain elasticity and therefore can deform under pressure load.Sample frame in principle can arbitrarily, it is excellent
Selection of land convex surface, concave surface flatly shape.But, in the particular embodiment according to the invention, especially it is flat examination
Sample rack is suitable.Therefore, sample frame flat involved in the further process of this paper.By to elastically deformable,
But the pressurization of sample frame flat before flexible deformation, cause slightly concave flexible deformation.Sample frame is in intermediate ratio at edge
On more strongly flexible deformation.Maximum distortion on generally arbitrary direction but especially on power direction is especially less than 1
Mm, preferably less than 100 μm, also preferably less than 10 μm, more preferably less than 1 μm, the most preferably less than 100
nm.The elasticity modulus that the material of sample frame is made is especially greater than 10 MPa, preferably more than 100 MPa, is also preferably greater than 1
GPa, most preferably more than 10 GPa, the most preferably more than 100 GPa.The aspect according to the invention of this embodiment is outstanding
It is applied force, especially surface force) on substrate storehouse.By the elasticity of sample frame to a certain extent by substrate storehouse
It is depressed into the sample frame of minimally deformation, especially concave surface deformation.Due to the extremely slight press-bending of substrate storehouse, two
Two to be not yet engaged with each other the surface of substrate laterally, particularly along its joint interface is slightly displaced relative to each other.Pass through
Between two surfaces to be engaged with each other formed herein friction realize metastable state, be especially enriched in dislocation structure according to
Generation of the invention.When the unloading of substrate storehouse, the elasticity in sample frame can be used to make sample frame and substrate storehouse again
It is transformed into its original shape.Here, occur in substrate storehouse again but the friction worked in the opposite direction.If
Necessity then can arbitrarily frequently repeat this process.
In another embodiment according to the invention, it is contemplated that constitute pressurized equipment and/or sample on constructing technology
Frame and/or whole system, so that only carrying out sample frame during load and being therefore also worth one to the substrate storehouse by load
The press-bending mentioned.In particular, realize the particularly preferred embodiment so that sample frame (preferably only) on its periphery, especially whole
A circumference is supported by bearing, especially fixing bearing, and center is not supported or is only submissively supported.Special implementation herein
In mode, sample frame and therefore substrate storehouse are in unloaded situation in the case where ignoring gravity and manufacturing tolerance
May be considered that it is flat, but load, preferably along the symmetry axis of pressure piston point load, also preferably along pressure
It is bent under the area load of plate in intermediate concave surface.
An importance according to the invention is to pass through sample frame in the surface on two surfaces to be engaged with each other
Friction between flexible deformation and thus caused two surfaces generates metastable state, especially with the knot of increased dislocation density
Structure.
In order to execute the load referred in previous paragraph, it is contemplated that the branch of substrate or substrate storehouse on various sample frame
It holds.Sample frame can be supported on the periphery thereof in comprehensive manner or only herein.
The amplitude of oscillatory actuator is especially less than 100 μm, preferably less than 1 μm, even more preferably less than 100 nm, optimal
Selection of land is less than 10 nm.
By amplitude generate it is lateral, be especially parallel to the displacement of substrate surface can be during process according to the invention
Arbitrary value is theoretically used, as long as remaining alignment error, the alignment error is presented in the displacement after completing the process
Less than 100 μm, preferably less than 1 μm, even more preferably less than 100 nm, more preferably less than 10 nm.In particular, transverse shift
It is set to be less than 10 μm, preferably less than 1 μm, even more preferably less than 100 nm, more preferably less than 10 nm.According to
Vertical movement is especially less than 10 μm, preferably less than 1 μm, even more preferably less than 100 nm during process of the invention, optimal
Selection of land is less than 10 nm.
According to the present invention, at least one precommpression being especially applied in comprehensive manner on substrate or substrate storehouse is generated
Stress.Precompressed stress under compression according to the invention is especially greater than 10 N/mm2, preferably more than 100 N/mm2, more preferably larger than
200 N/mm2, most preferably more than 1000 N/mm2。
According to the present invention, precompressed stress under compression or von-Mises compare stress and are especially greater than substrate or the layer on substrate
Material yield point, the layer should be used to engage to support to additionally facilitate the plastic deformation that corresponding dislocation is formed.Material
Yield point be preferably less than 5000 N/mm2, preferably less than 1000 N/mm2, also preferably less than 750 N/mm2, optimal
Selection of land is less than 500 N/mm2, the most preferably less than 300 N/mm2.The tensile strength of material is preferably less than 5000 N/mm2,
Preferably less than 1000 N/mm2, also preferably less than 750 N/mm2, more preferably less than 500 N/mm2, the most preferably
Less than 300 N/mm2.It is pure, not yet cold deformation and therefore still unhardened copper for example with about 70 N/mm2Yield point
About 200 N/mm2Tensile strength.
Additional power variable in time is generated with prestressed be superimposed by oscillation load.By especially exceeding material
The prestressing force of the yield point of material, the material are at least in the yield range (Flie β bereich) of material with positive half-wave.
Another effect according to the invention that engagement characteristics are generated with positive influence is by the device according to the invention quilt
The thermal energy and the utilization accessible temperature of the thermal energy being introduced into system.Especially in the oscillating element of concentration of local according to this hair
In bright embodiment, it can produce very high heat density and therefore very high temperature, can locally start to engage by it
Process.Further heat treatment can particularly preferably be given up in the case.Recrystallization is preferably in alap temperature
Lower progress, the temperature that thus can be preferably generated by local oscillation element are also possible to corresponding low.By the oscillation of concentration of local
The temperature that element generates is especially less than 800 DEG C, preferably less than 600 DEG C, also preferably less than 400 DEG C, more preferably less than
200 DEG C, the most preferably less than 50 DEG C.
Independently of it is used according to the embodiment of the present invention, substrate storehouse can be in outside after being successfully processed
, be heat-treated in the furnace separated according to the embodiment of the present invention.However, being connect regardless of the aforementioned use of isolated furnace
It is also possible for closing in chamber or being heat-treated in any other module implemented in process chain.In particular, only passing through heat
Processing carries out the main recrystallization and therefore practical permanent engagement of structure.Recrystallization preferably at alap temperature into
Row.Temperature in furnace or connector is especially less than 800 DEG C, preferably less than 600 DEG C, also preferably less than 400 DEG C, most preferably
Ground is less than 200 DEG C, and the most preferably less than 50 DEG C.
Detailed description of the invention
Fig. 1 a shows the enlarged drawing (Vergr of the schematic cross section of a coated substrate and the micro-structure of coating
β erung),
Fig. 1 b show the schematic cross section of coated substrate and after dislocation density increase coating it is micro-
The enlarged drawing of structure,
Fig. 1 c shows the micro-structure of schematic cross section and coating in latter two coated substrate of contact process
Enlarged drawing,
Fig. 1 d is shown in the schematic cross section of latter two coated substrate of engaging process and via joint interface
The enlarged drawing for the micro-structure through recrystallizing realized,
Fig. 2 a shows the surface according to the invention for directly acting on substrate and immediately results in the structure beyond joint interface
The schematic cross section of regenerated first embodiment,
Fig. 2 b shows the surface according to the invention for directly acting on substrate and also results in the structure beyond joint interface again
The schematic cross section of raw first embodiment,
Fig. 3 a shows the schematic cross section of the second embodiment according to the invention in first state,
Fig. 3 b shows the schematic cross section of the second embodiment according to the invention in the second state,
Fig. 3 c shows the schematic cross section of the second embodiment according to the invention in the third state,
Fig. 3 d shows the schematic diagram of the load diagram of second embodiment according to the invention,
Fig. 4 a shows the schematic cross section of the third embodiment according to the invention in first state,
Fig. 4 b shows the schematic cross section of the third embodiment according to the invention in the second state,
Fig. 4 c shows the schematic cross section of the third embodiment according to the invention in the third state,
Fig. 4 d shows the schematic diagram of the load diagram of third embodiment according to the invention,
Fig. 5 shows the first embodiment according to the invention for generating the device of bending oscillation comprehensively not in scale
Schematic diagram,
Fig. 6 shows the second embodiment according to the invention for generating the device of bending oscillation comprehensively not in scale
Schematic diagram,
Fig. 7 shows the third embodiment according to the invention for generating the device of bending oscillation comprehensively not in scale
Schematic diagram,
Fig. 8 shows the 4th embodiment according to the invention for generating the device of comprehensive shear oscillation not in scale
Schematic diagram,
Fig. 9 shows the 5th embodiment according to the invention for generating the device of static pressurization comprehensively not in scale
Schematic diagram,
Figure 10 shows according to the invention for generating the static pressurization of the compliance related with material with sample frame
Device sixth embodiment schematic diagram not in scale, and
Figure 11 shows according to the invention for generating the dress of the static pressurization of the constructing technology compliance with sample frame
The schematic diagram not in scale for the 7th embodiment set.
Specific embodiment
Fig. 1 a, which is shown, has the layer 2 being applied on substrate surface 1o, especially metal layer, particularly preferably Cu layers of substrate 1.
Enlarged drawing indicates the micro-structure for the layer 2 being made of multiple crystal grain 3.It, can also be with only one in the case where the thickness degree t of very little
Crystal grain 3 is located on layer thickness direction.The layer surface 2o and substrate surface 1o of layer 2 are generally equipped with the roughness not disappeared.Especially
Its, it is proposed, according to the invention, roughness be can not ignore it is small, particularly preferably be completely absent.Roughness or as averagely thick
Rugosity, secondary roughness are illustrated as average peak valley height.For identical measurement distance or measurement area, average roughness
The measured value of degree, secondary roughness and average peak valley height is substantially different, but within the scope of the identical order of magnitude.Cause
This, following roughness value range should or be understood to mean roughness, secondary roughness value or be understood to average
The value of peak valley height.Roughness is especially less than 100 μm, preferably less than 1 μm, also preferably less than 100 nm, most preferably
Ground is less than 10 nm, the most preferably less than 1 nm.
Now, increase dislocation density in the crystal grain 3 of layer 2 by arbitrary method according to the invention.It generates multiple
Dislocation 4.Crystal grain 3 gradually becomes the crystal grain 3' with correspondingly high dislocation density as a result,.The energy state of crystal grain 3' is at least partly
Ground is preferably mainly metastable.
Now, make by prepared by one of according to the embodiment of the present invention have layer 2, two substrates 1 of 2', 1' that
This contact or engagement.When contacting two substrates using functional unit, make substrate is aligned with each other can be necessary in advance.One
In kind special embodiment, it is proposed, according to the invention, substrate 1, the layer 2 of 1', the dislocation density in 2' are before contact and/or later
It is increased.In this state, substrate 1,1' two layers 2,2' it is intimate contact with one another and be in metastable state.
Fig. 1 d show it is successful, according to the invention, by crossing joint interface (English: bond interface) 5
The structure of recrystallization regenerates.It preferably carries out leading by the way that the structure of recrystallization is regenerated by especially small temperature increase
Enter.The temperature increase or imported by one of according to the embodiment of the present invention or with the implementation according to the invention
The furnace for the outside that mode separates especially executes in continuous furnace.It is according to the invention design particular in that, crystal grain can be passed through
The increased dislocation density of 3' is used in the regenerated temperature of structure and terrifically reduces.Temperature in engagement is especially less than 300 DEG C,
Preferably less than 200 DEG C, significantly preferably less than 150 DEG C, particularly preferably less than 100 DEG C, more preferably less than 50 DEG C.One
In the special embodiment of kind, the mean roughness of substrate surface 1o is less than 100 μm, and preferably less than 10 μm, more preferably
Less than 1 μm, more preferably less than 100 nm, the most preferably less than 10 nm.
In order to execute the engaging process shown in Fig. 1 a to Fig. 1 d, the dislocation presented below that can be realized in crystal grain 3 is close
Degree it is increased it is a variety of according to the embodiment of the present invention.Referring again to can be produced before or after two substrate contacts
The increase of dislocation density in each layer 2 of raw each substrate 1.Fig. 1 a to Fig. 1 b is shown generates richness before actual engagement process
Layer 2 containing dislocation.
In first embodiment according to the invention, movably vibrated in the direction of movement using along substrate back 1r
Equipment 6.In particular, the contact surface 6k of oscillator device 6 is less than substrate surface 1o.Ratio between contact surface 6k and substrate surface 1o is outstanding
It is less than 1/2, and preferably less than 1/6, even more preferably less than 1/10, more preferably less than 1/20, the most preferably less than 1/
100.Extremely high punctual force can be sent to by the quilt on layer 2,2' by extremely small contact surface 6k according to the invention
Substrate storehouse 8 that the substrate 1 of contact, 1' are formed and therefore to layer 2.
Oscillator device 6 passes through pre-compression force on the direction of the sample frame 7 for accommodating substrate storehouse 8 and/or precompressed
Substrate storehouse 8 is locally placed under compression stress by stress under compression.Later, periodic, preferably high frequency oscillation is added to
On positive precompressed stress under compression F.The oscillation of high frequency leads to the local stress alternation of layer 2,2'.Due to stress alternation, layer 2,2' are preferably
By the stress state for the dislocation 4 being suitable in generation crystal grain 3 according to the present invention.It is known to those skilled in the art to be used to generate this
The metallurgical prerequisite of the dislocation of sample, such as source Frank-Read.Oscillator device 6 is moved on substrate storehouse 8 with speed V,
And it is loaded compressing force f always herein.Pass through associated with compressing force f 6 generating layer 2 of oscillator device, the fusion temperature of 2'
About 20% to 40% temperature, and then recrystallize, the connection of the force-fitting to substrate storehouse is realized by the recrystallization.
In fig. 2 a, joint interface 5 is closed along distance L, because passing through the load of oscillator device 6, fully by position
Mistake 4 is introduced into crystal grain 3 and/or heat is introduced into joint interface 5, to cause structure to regenerate.
In some embodiments, original position structure regeneration be may not be desirable, and must pass through correct selection course
Parameter prevents, so that keeping the metastable structure with crystal grain 3' until the heat treatment being clearly performed.It shows in figure 2b
This situation.Although oscillator device 6 generates the dislocation 4 in the structure for two layers 2 being preferably at least soldered point by point herein,
It preferably not yet recrystallizes at the time point, which is necessary for the structure regeneration beyond joint interface 5
's.
Fig. 3 a to Fig. 3 c shows three (overall situations) vibration of the second embodiment according to the invention with oscillator device 6'
Swing state.The oscillator device 6' according to the invention is characterized in that substrate storehouse 8 is by extending the entire of substrate storehouse 8
On joint interface it is comprehensive oscillation and deform.Here, substrate storehouse 8 passes through the surface force f quilt on entire substrate surface 1o
It is pre-stretched and is kept under stress during entire oscillation load according to the invention.
There is at least one lower sample frame 7 according to the embodiment of the present invention, substrate storehouse 8 can lie in the lower sample
On frame.Particularly preferably there is be relatively fixed part, such as pressure plare 10.
According to the present invention, the power F for generating the local oscillation superposition to surface force f is imported at oscillation area 9.By
Power in especially local, preferably point-by-point oscillation area 9 imports, and substrate storehouse is on the direction of the normal of substrate surface 1o
It is deflected, wherein being generated particularly by the bearing each time or holding each time of substrate 1,1' or sample frame 7 and pressure plare 10 anti-
Directed force F g.Oscillation area 9 does not need to be located at center, but can act on each any position of substrate surface 1o.
Fig. 3 d shows the schematic diagram of the power load changed in time, which loads by surface force f constant in time
(dotted line) and superposition, periodic, especially local power load F composition.Identifiable to be, obtained power is always positioned at just
In pressure limit, so that substrate 1,1' are compressed mutually always.
The pin especially via piezoelectric element, hydraulic pin, pneumatic pin or Mechanical course is introduced via the power of oscillation area 9
Nail to carry out, the piezoelectric element, hydraulic pin, pneumatic pin or Mechanical course pin cause: sample frame 7 and/or pressure
Plate 10 and therefore substrate storehouse 8 due to be not aligned with oscillating force F and/or completely the same reaction force Fg and correspondingly become
Shape is especially bent.
In layer 2,2', bending generates stress state, and thus generates increased dislocation density.Instead of sample frame 7 and/or
Pressure plare 10, it is also contemplated that circular ring-shaped bearing, substrate storehouse 8 are supported on the circular ring-shaped bearing.Substrate surface as a result,
1o for electricity, it is mechanical, pneumatically or hydraulically for oscillating element be directly come-at-able.Even it is contemplated that mode is implemented as follows,
Circular support itself is made out of a piezoelectric material in the embodiment.Later, substrate storehouse is fixed on circular support.It is logical
Cross the piezoelectric vibration of circular support and correspondingly make 8 resonance of substrate storehouse, and substrate storehouse on edge defined by originate
With vibrated under boundary condition.By the particular embodiment, the electricity in center can be given up, machinery, pneumatically or hydraulically deform member
Part.
Fig. 4 a to Fig. 4 d, which is shown, has the similar of the difference for acting on shear load (shear stress) T on substrate storehouse 8
Embodiment.The shearing of substrate storehouse 8 in Fig. 4 a and Fig. 4 c is shown with being exaggerated.The angle of shear is only the several years.The angle of shear is outstanding
It is less than 10o, preferably less than 1o, even more preferably less than 0.1o, more preferably less than 0.01o, the most preferably less than 0.001o。
For the shearing of substrate storehouse 8 according to the invention, be preferably set up substrate back 1r especially with sample frame 7 according to Fig. 8 " '
And/or the comprehensive engagement of pressure plare 10'.
Fig. 5 shows the first embodiment according to the invention vibrated for generating comprehensive bending, by especially static
Flat in state sample frame 7 for accommodating and keeping/fixing substrate storehouse 8 and flat pressure especially in stationary state
Power plate 10 forms.Sample frame 7 and pressure plare 10 are point-by-point via at least three respectively on its back side (7r, 10r) and/or periphery
The fixing bearing of (vollumf nglich) is fixed around the whole circumference of fixing bearing 12 or unique radial symmetric.Two
The oscillating element 11 for being especially configured to piezoelectric element can make sample frame 7 and pressure plare 10 vertically deflect and make with its surface
It is fixed on substrate storehouse 8 between it especially periodically load by bending.In particular, according to the embodiment of the present invention can also be with
Pre-compression force f or prestressing force are preferably applied by one or two mobile oscillating element 11.
Fig. 6 show it is according to the invention for generating the second embodiment of bending oscillation comprehensively, by sample frame 7' and
Flat pressure plare 10 forms in stationary state.Sample frame 7' is shaped with holding receiving side 7o upper recess surface.Pressure plare 10 is similar
It is constructed according to the first embodiment of Fig. 5.Herein, substrate storehouse 8 is depressed into sample by uniquely upper oscillating element 11
In the static spill of frame 7'.In particular, according to the embodiment of the present invention can also be preferably by the direction of sample frame 7'
It moves oscillating element 11 and applies pre-compression force f or prestressing force.Pre-compression force f is preferably applied, to press substrate storehouse 8
Into the spill of sample frame 7', and make substrate storehouse in this curved shape consistently under stress by load.Later, preferably
The superposition according to the invention of oscillation load is carried out by oscillating element 11.
Fig. 7 show it is according to the invention for generate bending oscillation comprehensively with convex surface sample frame 7 " third embodiment party
Formula.In addition, structure and function corresponds to the second embodiment according to Fig. 6.
Fig. 8 shows according to the invention for generating the 4th embodiment party of comprehensive shear load (a to Fig. 4 c referring to fig. 4)
Formula.8 depended on pressure of substrate storehouse is fixed in flat sample frame 7IVBetween flat pressure plare 10'.Later, pass through sample frame
7IVWith the reciprocal shearing vibrated movement and carry out substrate storehouse 8 of pressure plare 10.The movement is by means of being disposed in sample
Frame 7IVIt is carried out with the oscillating element 11' on the side periphery of pressure plare 10'.Fixing bearing 12, which is used as, is especially configured to piezoelectric element
Oscillating element 11' fixed point, the oscillating element is respectively disposed at each fixing bearing 12 and sample of pressure plare 10'
Frame 7IVBetween.
Fig. 9 shows the sample frame 7' of the static concave surface bended according to the invention with pressure plare 10 and similar to Fig. 6
The 4th embodiment.The precommpression for being especially configured to area load load f is applied on pressure plare 10.Pressure plare 10 will
Substrate storehouse 8 (not drawing) is depressed on the sample frame 7' of concave surface, and thus in the surface to be engaged with each other generate metastable state,
Especially increased dislocation density.The sample frame 7' instead of concave surface constructed, can with it is shown in fig. 7 just the same using convex
The sample frame 7 that constructs to face ".
In particular, according to the sample frame 7 of Figure 10 " ' use be also it is possible, which is made of elastic material so that
Sample is just only made by the pre-compression force f that applies via pressure plare 10 (herein in special circumstances its especially full engagement power)
Put up spill.Sample frame 7 " ' show as it is especially elastic so that after removing pre-compression force f, especially surface force, sample frame
7 " ' turn again in its original initial position.
In such an embodiment aspect according to the invention in particular, in that, be depressed on substrate storehouse in pre-compression force f
And based on sample frame 7 " ' material elasticity and the substrate storehouse is depressed into sample frame 7 " ' in during in mistake according to the invention
The attachment friction between surface being not yet engaged with each other before journey.Therefore, sample frame 7 " ' it is based on Material specific parameters, such as elasticity
Modulus and surrender." ' elasticity modulus when increasing from center towards edge, sample frame 7 " ' the flexibly concave surface in particular, when sample frame 7
Deformation, therefore according to a kind of preferred embodiment, sample frame 7 " ' there is elasticity modulus gradient and/or surface force f not to constitute
Cloth load, but constitute the area load from the center to edge reduction.
Figure 11 shows a kind of particularly preferred embodiment for the sample frame 7 being fixed in fixing bearing 12.Sample frame 7 can
With or lie directly in fixing bearing 12, or more preferably lie against the structure between sample frame 7 and fixing bearing 12
It builds on element.Therefore, Figure 11 merely comprises very schematical sketch.Design according to the invention is only in that, accommodates substrate storehouse 8
Sample frame 7 supported so that power is flowed out via fixing bearing 12 when pressurized and sample frame 7 is bent at center.
Fixing bearing 12 especially positioned at sample frame 7 outer periphery position in, radial symmetric, around whole circumference
Fixing bearing.The pressure plare 10 opposite with sample frame 7 is preferably fixed to the pressure of pressure piston 13, especially connector
On piston 13.By the movement relatively close, particularly by pressure piston 13 of pressure plare 10 and sample frame 7, it is located in pressure
Substrate storehouse 8 (not drawing) between power plate 10 and sample frame 7 is pressurized.Pressure piston 13 is preferably made herein, so that
Center point force is converted into uniform surface force in ongoing pressure dwell.
But it can also be envisaged that center point force is sent to substrate storehouse 8 via pressure piston 13 and pressure plare 10.It presses herein
Under contracting load, sample frame 7 and therefore substrate storehouse 8 also at center and is therefore bent to concave surface, and on periphery by fixing bearing 12
Support.Different according to the embodiment of the present invention from Figure 10, concave surface bends and is not based on such as elasticity modulus or bullet herein
Property modulus gradient Material specific parameters carry out, but based on constructing technology feature, particularly by fixing bearing 12 to sample
The only periphery of frame 7, support especially around whole circumference carries out.
By being previously mentioned according to the embodiment of the present invention, substrate storehouse 8 and therefore each substrate 1,1' are again towards that
This, which is shifted such that, generates generation metastable equilibrium according to the invention by load, especially layer 2, the friction between 2', especially has
Have the effect of the structure of increased dislocation structure, the effect subsequently result in two substrates 1,1' via layer 2,2' more optimal company
It connects.
Reference signs list
1,1' substrate
1o substrate surface
1r substrate back
2,2' layers
2o layer surface
3 crystal grain
3' has the metastable crystallite of high dislocation density
4 dislocations
5 joint interfaces
6,6' oscillator device
6k contact surface
7 、7'、 7"、7"' 、7IVSample frame
The back side 7r
8 substrate storehouses
9 power inlet points (Krafteinsatzpunkt)
10,10' pressure plare
The back side 10r
11 oscillating elements, especially piezoelectric element
12 fixing bearings
13 pressure pistons
T thickness degree
V mobile device/speed
F pre-compression force
F oscillating force
L distance
T shear load
Fg reaction force.
Claims (18)
1. first layer (2) and the second layer of the second substrate (1') that one kind is used for the first substrate (1) are (2') in joint interface (5)
Permanent engagement method, which is characterized in that before the engagement and/or period, at least in the region of the joint interface (5)
Increase the dislocation density of the dislocation (4) of the first layer (2) and/or the second layer (2'), wherein substrate storehouse (8) is supported in examination
Sample rack (7,7', 7 ", 7 " ', 7IV) on, which allows the first layer and/or the deformation of the second layer, wherein the sample frame
(7、7'、7"、7"'、7IV) and/or pressure plare (10,10') comprehensively pressurize to the substrate storehouse (8) to engage the first layer
(2) and the second layer (2') when concave surface and/or convex surface deformation, wherein the sample frame (7,7', 7 ", 7 " ', 7IV) and/or the pressure
The deformation of plate (10,10') causes at least in pressurization in the dislocation density of the region Dislocations (4) of the joint interface (5)
Increase.
2. the method as described in claim 1, wherein the dislocation density is increased by least one oscillation, wherein it is described at least
One oscillation is introduced by the oscillator device (6,6') to work in ultrasonic wave range.
3. method according to claim 2, wherein the dislocation density is increased by multiple oscillations.
4. method according to claim 2, wherein at least one described oscillation passes through the oscillation that works in ultrasonic wave range
Equipment (6,6') is locally introduced into.
5. the method as described in one of Claims 1-4, wherein the junction temperature in engagement is up to 300 DEG C.
6. the method as described in one of Claims 1-4, wherein the junction temperature in engagement is up to 200 DEG C.
7. the method as described in one of Claims 1-4, wherein the junction temperature in engagement is up to 150 DEG C.
8. the method as described in one of Claims 1-4, wherein the junction temperature in engagement is up to 100 DEG C.
9. the method as described in one of Claims 1-4, wherein the junction temperature in engagement is up to 50 DEG C.
10. the method as described in one of Claims 1-4, wherein (2') the first layer (2) and/or the second layer are metals,
And (1') first substrate (1) and/or second substrate are semiconductors.
11. method as claimed in claim 10, wherein (2') the first layer (2) and/or the second layer are discontinuous.
12. method as claimed in claim 10, wherein (2') the first layer (2) and/or the second layer are Cu.
13. the method as described in one of Claims 1-4, wherein logical transverse to the compressing force f that the joint interface (5) works
Cross oscillation be added to first substrate (1) and second substrate (1') on.
14. the method as described in one of Claims 1-4, wherein logical transverse to the compressing force f that the joint interface (5) works
Cross oscillation with greater than 0 obtained power be added to first substrate (1) and second substrate (1') on.
15. first layer (2) and the second layer of the second substrate (1') that one kind is used for the first substrate (1) are (2') in joint interface (5)
On permanent engagement device, which includes
Sample frame (7,7', 7 ", 7 " ', 7IV), for accommodating first substrate (1), wherein substrate storehouse (8) can be supported
The sample frame (7,7', 7 ", 7 " ', 7IV) on, wherein the sample frame (7,7', 7 ", 7 " ', 7IV) be configured to allow this first
The deformation of layer and/or the second layer, and
Pressure plare (10,10'), for (1') loading to first substrate (1) and second substrate, which is suitable at least
Increase the dislocation density of the dislocation (4) of the first layer (2) and/or the second layer (2') in the region of joint interface (5),
Wherein the sample frame (7,7', 7 ", 7 " ', 7IV) and/or the pressure plare (10,10') to the substrate storehouse (8) comprehensively
Pressurization to engage the first layer (2) and the second layer (2') when can concave surface and/or convex surface deform, wherein the sample frame (7,7',
7"、7"'、7IV) and/or the pressure plare (10,10') the deformation pressurization when cause at least in the region of the joint interface (5)
The increase of the dislocation density of Dislocations (4).
16. device as claimed in claim 15, wherein the sample frame (7,7', 7 ", 7 " ', 7IV) and/or the pressure plare (10,
10') it is supported on its back side (7r, 10r) by means of fixing bearing (12).
17. the device as described in claim 15 or 16, wherein the load is carried out using at least one oscillation.
18. the device as described in claim 15 or 16, wherein the load is carried out using multiple oscillations.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014106231.0A DE102014106231A1 (en) | 2014-05-05 | 2014-05-05 | Method and device for permanent bonding |
| DE102014106231.0 | 2014-05-05 | ||
| PCT/EP2015/058739 WO2015169603A1 (en) | 2014-05-05 | 2015-04-22 | Method and device for permanent bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106415811A CN106415811A (en) | 2017-02-15 |
| CN106415811B true CN106415811B (en) | 2019-05-17 |
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| CN201580023049.1A Active CN106415811B (en) | 2014-05-05 | 2015-04-22 | Method and apparatus for permanent engagement |
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| Country | Link |
|---|---|
| US (1) | US9947638B2 (en) |
| EP (1) | EP3140856B9 (en) |
| JP (1) | JP6486386B2 (en) |
| KR (1) | KR102047587B1 (en) |
| CN (1) | CN106415811B (en) |
| DE (1) | DE102014106231A1 (en) |
| SG (1) | SG11201609246UA (en) |
| TW (1) | TWI638413B (en) |
| WO (1) | WO2015169603A1 (en) |
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| FR3027250B1 (en) * | 2014-10-17 | 2019-05-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | PROCESS FOR DIRECT COLLAGE VIA LOW ROUGH METAL LAYERS |
| TWI686518B (en) | 2019-07-19 | 2020-03-01 | 國立交通大學 | Electrical connecting structure having nano-twins copper and method of forming the same |
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| JP3867673B2 (en) * | 2003-01-28 | 2007-01-10 | 松下電工株式会社 | Manufacturing method of multilayer printed wiring board |
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| JPS6363584A (en) * | 1986-09-02 | 1988-03-19 | Nippon Steel Corp | Solid phase joining method for metal |
| JP2002103055A (en) * | 2000-09-29 | 2002-04-09 | Japan Science & Technology Corp | Diffusion joining method utilizing dynamic recrystallization |
| JP2005294824A (en) * | 2004-03-12 | 2005-10-20 | Bondotekku:Kk | Ultrasonic joining method and ultrasonic joining device in vacuum |
| US20060003548A1 (en) * | 2004-06-30 | 2006-01-05 | Kobrinsky Mauro J | Highly compliant plate for wafer bonding |
| JP5347235B2 (en) * | 2007-04-05 | 2013-11-20 | 株式会社ニコン | Substrate bonding apparatus and substrate bonding method |
| KR20100043478A (en) * | 2008-10-20 | 2010-04-29 | 삼성전기주식회사 | Electrostatic chuck and apparatus for attaching substrate using the same |
| KR20100108418A (en) * | 2008-11-14 | 2010-10-06 | 도쿄엘렉트론가부시키가이샤 | Bonding apparatus and bonding method |
| FR2962594B1 (en) * | 2010-07-07 | 2012-08-31 | Soitec Silicon On Insulator | MOLECULAR ADHESION BONDING METHOD WITH RADIAL DESALIGNMENT COMPENSATION |
| AT511384B1 (en) | 2011-05-11 | 2019-10-15 | Thallner Erich | PROCESS AND DEVICE FOR BONDING TWO WAFER |
| DE102011080534A1 (en) * | 2011-08-05 | 2013-02-07 | Hesse & Knipps Gmbh | Method for ultrasonic bonding |
| US10163681B2 (en) | 2011-08-30 | 2018-12-25 | Ev Group E. Thallner Gmbh | Method for permanently bonding wafers by a connecting layer by means of solid state diffusion or phase transformation |
-
2014
- 2014-05-05 DE DE102014106231.0A patent/DE102014106231A1/en not_active Ceased
-
2015
- 2015-04-22 WO PCT/EP2015/058739 patent/WO2015169603A1/en active Application Filing
- 2015-04-22 US US15/306,591 patent/US9947638B2/en active Active
- 2015-04-22 JP JP2016566671A patent/JP6486386B2/en active Active
- 2015-04-22 KR KR1020167030594A patent/KR102047587B1/en active IP Right Grant
- 2015-04-22 SG SG11201609246UA patent/SG11201609246UA/en unknown
- 2015-04-22 EP EP15718477.1A patent/EP3140856B9/en active Active
- 2015-04-22 CN CN201580023049.1A patent/CN106415811B/en active Active
- 2015-05-04 TW TW104114194A patent/TWI638413B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1339096A2 (en) * | 2002-02-25 | 2003-08-27 | Murata Manufacturing Co., Ltd. | Ultrasonic horn, and ultrasonic bonding apparatus using the ultrasonic horn |
| JP3867673B2 (en) * | 2003-01-28 | 2007-01-10 | 松下電工株式会社 | Manufacturing method of multilayer printed wiring board |
| CN102822954A (en) * | 2010-03-31 | 2012-12-12 | Ev集团E·索尔纳有限责任公司 | Method for permanently connecting two metal surfaces |
| CN103328147A (en) * | 2012-01-23 | 2013-09-25 | Ev集团E·索尔纳有限责任公司 | Method and device for permanent bonding of wafers, and cutting tool |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201545252A (en) | 2015-12-01 |
| US9947638B2 (en) | 2018-04-17 |
| EP3140856A1 (en) | 2017-03-15 |
| US20170053892A1 (en) | 2017-02-23 |
| KR20170002401A (en) | 2017-01-06 |
| JP6486386B2 (en) | 2019-03-20 |
| DE102014106231A1 (en) | 2015-11-05 |
| SG11201609246UA (en) | 2016-12-29 |
| EP3140856B1 (en) | 2020-02-19 |
| EP3140856B9 (en) | 2020-07-22 |
| JP2017516306A (en) | 2017-06-15 |
| CN106415811A (en) | 2017-02-15 |
| KR102047587B1 (en) | 2019-11-21 |
| WO2015169603A1 (en) | 2015-11-12 |
| TWI638413B (en) | 2018-10-11 |
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