CN106330126A - Antistatic band-pass filtering integrated circuit - Google Patents
Antistatic band-pass filtering integrated circuit Download PDFInfo
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- CN106330126A CN106330126A CN201510375096.4A CN201510375096A CN106330126A CN 106330126 A CN106330126 A CN 106330126A CN 201510375096 A CN201510375096 A CN 201510375096A CN 106330126 A CN106330126 A CN 106330126A
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- resonant element
- electric capacity
- integrated circuit
- anlistatig
- bandpass filtering
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Abstract
The present invention relates to the electronic technology field, in particular to an integrated circuit. An antistatic band-pass filtering integrated circuit comprises a first resonance unit connected between an input end and a grounding end; a third resonance unit connected between a first output end and a second output end or connected between the first output end and the grounding end and coupled with the first resonance unit; a second resonance unit coupled with the first and third resonance units separately, wherein the first, second and third resonance units are in cross coupling and are integrated on a same chip via an integrated circuit technology. The integrated circuit adopted by the present invention realizes the functions of a filter and a balanced to unbalanced (Balun) converter with a lower cost, and has a better ESD electrostatic protection function.
Description
Technical field
The present invention relates to electronic technology field, be specifically related to a kind of integrated circuit.
Background technology
Current handheld device it is frequently necessary to use SAW filter (Surface Acoustic Wave,
And balanced-to-unblanced transformer (Balanced to Unbalanced, Balun) SAW).Surface acoustic wave
The effect of wave filter is to suppress electronic equipment higher hamonic wave, transmitting leakage signal and all kinds of parasitism miscellaneous
Wave interference etc.；Equilibrate to imbalance converter and mainly realize common mode inhibition, differential mode output and impedance matching.
In existing circuit design, how independent the functional realiey corresponding device of employing of wave filter and balun circuit be real
Existing, and along with the requirement of handheld device miniaturization and low cost is more and more higher, by multi-mode device and module
The requirement integrated increases day by day, and existing independent device obviously can not meet the demand of technology development,
And add and realize cost.
Summary of the invention
It is an object of the invention to, it is provided that a kind of anlistatig bandpass filtering integrated circuit, solve above skill
Art problem；
Technical problem solved by the invention can realize by the following technical solutions:
Anlistatig bandpass filtering integrated circuit, wherein, including,
First resonant element, is connected between an input and earth terminal；
3rd resonant element, is connected between one first outfan and one second outfan, with described first resonance
Unit couples；
Second resonant element, couples with described first resonant element and described 3rd resonant element respectively；
Intersection coupling between described first resonant element, described second resonant element and described 3rd resonant element
Merga pass integrated circuit technology is integrated on same chip.
The anlistatig bandpass filtering integrated circuit of the present invention, described first resonant element, described second humorous
Shake unit and described 3rd resonant element is integrated in same dielectric base by integrated passive devices technique.
The anlistatig bandpass filtering integrated circuit of the present invention, described first resonant element includes the first electric capacity
And first inductance in parallel with described first electric capacity；And/or, described second resonant element includes the second electric capacity
And second inductance in parallel with described second electric capacity；And/or, described 3rd resonant element includes the 3rd electric capacity
And threeth inductance in parallel with described 3rd electric capacity.
The anlistatig bandpass filtering integrated circuit of the present invention, described first resonant element includes the first electric capacity
And first inductance in parallel with described first electric capacity；Described second resonant element include the second electric capacity and with institute
State the second inductance that the second electric capacity is in parallel；Described 3rd resonant element includes the 3rd electric capacity and with the described 3rd
The 3rd inductance that electric capacity is in parallel；
Described first electric capacity, described second electric capacity and described 3rd electric capacity use integrated passive devices technique in
The metal-insulator-metal capacitor formed in described dielectric base.
The anlistatig bandpass filtering integrated circuit of the present invention, described dielectric base is formed with copper metal layer,
For being formed between described first resonant element, described second resonant element and described 3rd resonant element
Connection line.
The anlistatig bandpass filtering integrated circuit of the present invention, described first resonant element, described second humorous
Shake unit and the described 3rd equal resonance of resonant element in predetermined passband frequency band.
The anlistatig bandpass filtering integrated circuit of the present invention, described first outfan and described second output
End output amplitude respectively is equal, the differential signal of opposite in phase.
The anlistatig bandpass filtering integrated circuit of the present invention, described second outfan is connected with earth terminal.
The present invention also provides for a kind of mobile terminal, including above-mentioned anlistatig bandpass filtering integrated circuit.
Beneficial effect: owing to using above technical scheme, the integrated circuit structure of the present invention is with less one-tenth
Originally it is simultaneously achieved wave filter, balun function, and there is preferable ESD antistatic protection function.
Accompanying drawing explanation
Fig. 1 is a kind of circuit structure diagram of the present invention；
Fig. 2 is differential mode amplitude frequency curve and the common mode amplitude frequency curve figure of the present invention；
Fig. 3 is the first outfan and the amplitude-frequency response figure of the second outfan of the present invention；
Fig. 4 is the first outfan and the phase-frequency response curve chart of the second outfan of the present invention；
Fig. 5 is the another kind of circuit structure diagram improved of the present invention；
Fig. 6 is the insertion loss curve chart of Fig. 5.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the present invention, and
It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not making
The every other embodiment obtained on the premise of going out creative work, broadly falls into the scope of protection of the invention.
It should be noted that in the case of not conflicting, the embodiment in the present invention and the spy in embodiment
Levy and can be mutually combined.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as the present invention's
Limit.
Reference Fig. 1, anlistatig bandpass filtering integrated circuit, wherein, including,
First resonant element 11, is connected between an input Input and earth terminal GND；
3rd resonant element 13, is connected to one first outfan Output1 and one second outfan Output2
Between, couple with the first resonant element 11；
Second resonant element 12, couples with the first resonant element 11 and the 3rd resonant element 13 respectively；
Between first resonant element the 11, second resonant element 12 and the 3rd resonant element 13, cross-couplings is also
It is integrated on same chip by integrated circuit technology.
The present invention uses integrated circuit technology to be integrated in same by the circuit structure that three resonant elements form
On chip, the wave filter of the independent device of the prior art that compares and single balun circuit, can be simultaneously
Realize wave filter, balun ESD (Electronic Static Discharge, static discharge) safeguard function.
Specifically, coupling between the first resonant element 11 and the second resonant element 12 in three resonant elements
Syzygy number is K12, and the coefficient of coup between the second resonant element 12 and the 3rd resonant element 13 is K23,
The coefficient of coup between first resonant element 11 and the 3rd resonant element 13 is K13；Three coefficients of coup
Determine transmission zero, it is achieved the function of Out-of-band rejection, and owing to using coupled structure, Out-of-band rejection
Can be preferably；It is simultaneously entered the first resonant element 11 ground connection of port, there is preferable electrostatic defending performance.
And above-mentioned circuit structure realizes single ended input, two outfan output amplitudes are equal, 180 degree of phase place
Differential output signal, it is achieved that the function of balun circuit.
The anlistatig bandpass filtering integrated circuit of the present invention, first resonant element the 11, second resonant element
12 and the 3rd resonant element 13 can be integrated in same dielectric base by integrated passive devices technique.
Existing integrated passive devices technique includes the LTCC LTCC using pottery for substrate
(Low Temperature Co-fired Ceramics) technology, utilize ceramic material as substrate, by electricity
In the passive device embedment ceramic substrates such as appearance, resistance, form integrated ceramic component by sintering, can be big
Width reduces the space of element, but it is accomplished that the circuit of a certain specific function mostly；The present invention passes through
Thin-film integration passive device technique in integrated passive devices technique, by exposure, development, plated film, expansion
Dissipate, the semiconductor technology such as etching make on suitable carrier substrates material various electric capacity and inductance element with
And connection line, thin-film integration passive device technique can be with integrated more electric function, it is provided that compact
IC products, has miniaturization and improves the advantage of systematic function, having become as system in package
One important implementation, owing to integrated passive devices technique is not belonging to the improvement of the present invention, concrete work
Process does not repeats at this.
The anlistatig bandpass filtering integrated circuit of the present invention, the first resonant element 11 can include the first electricity
Hold C1 and the first inductance L1 in parallel for electric capacity C1 with first；And/or, the second resonant element 12 includes
Two electric capacity C2 and the second inductance L2 in parallel for electric capacity C2 with second；And/or, the 3rd resonant element 13
Including the 3rd electric capacity C3 and the threeth inductance L3 in parallel for electric capacity C3 with the 3rd.
During work, the dominant frequency of three resonant elements is close, by adjusting three resonant frequencies, three resonance
The coefficient of coup between unit realizes the function of filtering.
The anlistatig bandpass filtering integrated circuit of the present invention, the first resonant element 11 includes the first electric capacity
C1 and the first inductance L1 in parallel for electric capacity C1 with first；Second resonant element 12 includes the second electric capacity C2
And the second inductance L2 in parallel for electric capacity C2 with second；3rd resonant element 13 include the 3rd electric capacity C3 and
The threeth inductance L3 in parallel for electric capacity C3 with the 3rd；First electric capacity C1, the second electric capacity C2 and the 3rd electric capacity
C3 uses integrated passive devices technique to form the electric capacity of MIM structure in dielectric base.
The electric capacity of MIM structure comprises top plate electrode and bottom plate electrode and electricity
Insulation dielectric body between pole, the thickness of general insulation dielectric body is several microns of zero point, is very easy to
Punctured by static discharge and cause short circuit, the present invention the first resonant element 11 ground connection by input port,
Make to need not active device, it is not necessary to extra electrostatic discharge protection circuit can preferably realize electrostatic defending.
The anlistatig bandpass filtering integrated circuit of the present invention, dielectric base is formed copper metal layer, uses
In the connecting line formed between first resonant element the 11, second resonant element 12 and the 3rd resonant element 13
Road.
During physical circuit layout, the first resonant element the 11, second resonant element 12 and the 3rd resonant element
The inductance of 13 can arrange and have at least three the most parallel and interlock portion, and one of them staggered portion is first
Inductance L1 and the second inductance L2 is formed, and a staggered portion is the second inductance L2 and the 3rd inductance L3 formation,
One staggered portion is formed by the first inductance L1 and the 3rd inductance L3.
In conjunction with common mode amplitude frequency curve and the differential mode amplitude frequency curve of the present invention shown in Fig. 1 and Fig. 2 to Fig. 4,
The phase contrast curve of the response curve of the amplitude imbalance of two output ports and two output ports, permissible
See the balun function that present invention achieves common mode inhibition, differential mode transmission, and transmit in passband, resistance
The filter function of suppression in band.
By the anlistatig bandpass filtering integrated circuit of the present invention is improved, as it is shown in figure 5, the
Two outfan Output2 can directly be connected with earth terminal GND.When circuit need not balun function, only
When needing the function realizing wave filter and electrostatic defending, the second outfan Output2 of the present invention directly with
Earth terminal GND connects, it is achieved the wave filter of single ended input Single-end output, in conjunction with the input/output of Fig. 6
Frequency response characteristic it can be seen that the circuit structure of improvement of the present invention achieves passes in passband
Defeated, Out-of-band rejection, mainly achieves filter function.
The present invention also provides for a kind of mobile terminal, by using the above-mentioned integrated electricity of anlistatig bandpass filtering
Road.Replace SAW filter and the balun used in existing handheld device, meet handheld device miniaturization
Development trend and requirement with low cost.
The foregoing is only preferred embodiment of the present invention, not thereby limit embodiments of the present invention and
Protection domain, to those skilled in the art, it should can appreciate that all utilization description of the invention
And the equivalent done by diagramatic content and the scheme obtained by obvious change, all should comprise
Within the scope of the present invention.
Claims (9)
- The most anlistatig bandpass filtering integrated circuit, it is characterised in that include,First resonant element, is connected between an input and earth terminal；3rd resonant element, is connected between one first outfan and one second outfan, with described first Resonant element couples；Second resonant element, couples with described first resonant element and described 3rd resonant element respectively；Intersection coupling between described first resonant element, described second resonant element and described 3rd resonant element Merga pass integrated circuit technology is integrated on same chip.
- Anlistatig bandpass filtering integrated circuit the most according to claim 1, it is characterised in that institute State the first resonant element, described second resonant element and described 3rd resonant element and pass through integrated passive devices Technique is integrated in same dielectric base.
- Anlistatig bandpass filtering integrated circuit the most according to claim 1, it is characterised in that institute State the first resonant element and include the first electric capacity and first inductance in parallel with described first electric capacity；And/or, institute State the second resonant element and include the second electric capacity and second inductance in parallel with described second electric capacity；And/or, institute State the 3rd resonant element and include the 3rd electric capacity and threeth inductance in parallel with described 3rd electric capacity.
- Anlistatig bandpass filtering integrated circuit the most according to claim 2, it is characterised in that institute State the first resonant element and include the first electric capacity and first inductance in parallel with described first electric capacity；Described second Resonant element includes the second electric capacity and second inductance in parallel with described second electric capacity；Described 3rd resonance list Unit includes the 3rd electric capacity and threeth inductance in parallel with described 3rd electric capacity；Described first electric capacity, described second electric capacity and described 3rd electric capacity use integrated passive devices technique in The metal-insulator-metal capacitor formed in described dielectric base.
- Anlistatig bandpass filtering integrated circuit the most according to claim 2, it is characterised in that institute State and in dielectric base, be formed with copper metal layer, be used for forming described first resonant element, described second resonance Connection line between unit and described 3rd resonant element.
- Anlistatig bandpass filtering integrated circuit the most according to claim 1, it is characterised in that institute State the first resonant element, described second resonant element and the described 3rd equal resonance of resonant element to lead in predetermined In band frequency band.
- Anlistatig bandpass filtering integrated circuit the most according to claim 1, it is characterised in that institute State the first outfan and described second outfan output amplitude respectively is equal, the differential signal of opposite in phase.
- Anlistatig bandpass filtering integrated circuit the most according to claim 1, it is characterised in that institute State the second outfan to be connected with earth terminal.
- 9. a mobile terminal, it is characterised in that include the logical filter of the anlistatig band described in claim 1 Ripple integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510375096.4A CN106330126A (en) | 2015-06-30 | 2015-06-30 | Antistatic band-pass filtering integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510375096.4A CN106330126A (en) | 2015-06-30 | 2015-06-30 | Antistatic band-pass filtering integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106330126A true CN106330126A (en) | 2017-01-11 |
Family
ID=57722285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510375096.4A Pending CN106330126A (en) | 2015-06-30 | 2015-06-30 | Antistatic band-pass filtering integrated circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111585536A (en) * | 2020-06-04 | 2020-08-25 | 武汉凡谷电子技术股份有限公司 | Multilayer filter |
| CN114497936A (en) * | 2022-03-04 | 2022-05-13 | 南通大学 | Lumped element differential broadband band-pass filter |
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| CN102208395A (en) * | 2010-03-30 | 2011-10-05 | 新科金朋有限公司 | Semiconductor device and method of forming high-attenuation balanced band-pass filter |
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| CN102208395A (en) * | 2010-03-30 | 2011-10-05 | 新科金朋有限公司 | Semiconductor device and method of forming high-attenuation balanced band-pass filter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111585536A (en) * | 2020-06-04 | 2020-08-25 | 武汉凡谷电子技术股份有限公司 | Multilayer filter |
| CN114497936A (en) * | 2022-03-04 | 2022-05-13 | 南通大学 | Lumped element differential broadband band-pass filter |
| CN114497936B (en) * | 2022-03-04 | 2023-07-21 | 南通大学 | Lumped element differential broadband band-pass filter |
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Application publication date: 20170111 |