CN106328830B - The production method and displayer of displayer - Google Patents
The production method and displayer of displayer Download PDFInfo
- Publication number
- CN106328830B CN106328830B CN201610863729.0A CN201610863729A CN106328830B CN 106328830 B CN106328830 B CN 106328830B CN 201610863729 A CN201610863729 A CN 201610863729A CN 106328830 B CN106328830 B CN 106328830B
- Authority
- CN
- China
- Prior art keywords
- phase
- substrate
- change material
- displayer
- luminescent layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Production method and corresponding displayer this application involves a kind of displayer, specifically, the method includes at least following steps：After being sequentially prepared phase-change material layers and luminescent layer in the side of first substrate, first substrate opposite side mask film covering figure and carry out laser treatment, obtain part A；Make thin film transistor (TFT), anode and cavitation layer successively on second substrate, obtain part B；Make the luminescent layer of part A and the cavitation layer fitting of part B；And first substrate and phase-change material layers are removed, electronic shell and cathode are sequentially prepared in the position of former phase-change material layers, the displayer is obtained after encapsulation.The application can be reduced the pel spacing in luminescent layer, obtain the displayer with high PPI by using phase-change material layers in the production process under the premise of other materials and step are immovable.
Description
Technical field
This application involves technical field of flat panel display, specifically, is related to the production method and phase of a kind of displayer
The displayer answered.
Background technology
Active matrix organic light-emitting diode (Active-matrix organic light emitting diode, letter
Claiming AMOLED) display is referred to as Display Technique of future generation.Compared with the liquid crystal displays such as existing mobile phone, TV, display,
Displayer has broader visual angle, the refresh rate of higher and thinner size, it is with self-luminous, wide viewing angle, corresponding
Time is short, high luminous efficiency, the features such as colour gamut is wide, operating voltage is low, it is considered to be most potential display device.
Number of pixels (Pixels Per Inch, abbreviation PPI) is the unit of image resolution ratio, and what it was represented is display
Pixel (Pixel) number that per inch is possessed.Therefore PPI numerical value is higher, that is, representing display screen can be shown with higher density
Diagram picture, degree of verisimilitude are higher.But on the basis of current material and process equipment, make the displayer limitation of high PPI
It is larger.
The content of the invention
The primary and foremost purpose of the application is to propose a kind of production method of displayer.
The second purpose of the application is the displayer for proposing that the method is prepared.
In order to complete the purpose of the application, the technical solution used for：
This application involves a kind of production method of displayer, the method includes at least following steps：
Step 1: after being sequentially prepared phase-change material layers and luminescent layer in the side of first substrate, in the another of first substrate
Side mask film covering figure simultaneously carries out laser treatment, obtains part A；
Step 2: making thin film transistor (TFT), anode and cavitation layer successively on second substrate, part B is obtained；
Step 3: make the luminescent layer of part A and the cavitation layer fitting of part B；And
Step 4: removing the first substrate and the phase-change material layers, it is sequentially prepared in the position of former phase-change material layers
Electronic shell and cathode, obtain the displayer after encapsulation,
In step 1, the requirement to phase-change material is that internal structure changes under laser irradiation, the body of phase-change material
Shrink, to reduce the pel spacing and sub-pixel spacing in luminescent layer,
Laser treatment at least needs to irradiate the gap between pixel and pixel, and between sub-pixel and sub-pixel between
Gap.
Preferably, the first substrate is glass substrate.
Preferably, the wavelength of the laser treatment is 308nm or 355nm, and energy density is 10~5000MJ/cm2, frequency
For 10~3000Hz, energy is 10~1000 millijoules, and the time is 1~500ns.
Preferably, by way of vacuum thermal evaporation, using luminous organic material the surface of the phase-change material layers into
Film, obtains the luminescent layer.
Preferably, when luminescent layer is deposited, the phase-change material layers do not change.
Preferably, the phase-change material in the phase-change material layers is haloflex.
Preferably, electronic shell and cathode are placed on luminescent layer by sputtering or evaporation process.
The application further relates to the displayer that the method is prepared.
Preferably, the display includes second substrate, AMOLED light-emitting zones and encapsulated layer, the AMOLED luminous zones
Domain is arranged on second substrate, and encapsulated layer is arranged on top and the surrounding of AMOLED light-emitting zones, and AMOLED light-emitting zones are sealed
Dress, the AMOLED light-emitting zones include cathode, electronic shell, luminescent layer, cavitation layer, the anode and thin set gradually from top to bottom
Film transistor, the thin film transistor (TFT) are bonded with the second substrate.
The technical solution of the application at least has following beneficial effect：
By using phase-change material layers in the manufacturing process of displayer, can not change in other materials and step
On the premise of change, reduce the pel spacing in luminescent layer, obtain the displayer with high PPI.
Brief description of the drawings
Fig. 1 is the structure diagram of displayer prepared by herein described method.
Fig. 2 is the schematic diagram that rgb pixel is arranged in the application displayer.
Fig. 3 is the manufacturing process schematic diagram of part A in the application.
Fig. 4 is part A and part B cohesive process schematic diagram in the application.
Fig. 5 is that first substrate and phase-change material layers process schematic are removed in the application.
Wherein, 1 is second substrate, and 2 be TFT, and 3 be anode, and 4 be cavitation layer, and 51,52 and 53 be luminescent layer, and 6 be electronics
Layer, 7 be cathode, and 8 be encapsulated layer, and 9 be phase-change material layers, and 10 be first substrate, and 111,112 and 113 be mask, and 210 be pixel,
211st, 212 and 213 be sub-pixel, and 30 be part A, and 31 be part B.
Embodiment
With reference to specific embodiment, the application is expanded on further.It is to be understood that these embodiments are merely to illustrate the application
Rather than limitation scope of the present application.
This application involves a kind of production method of displayer, the method includes at least following steps：
Step 1: after being sequentially prepared phase-change material layers and luminescent layer in the side of first substrate, in the another of first substrate
Side mask film covering figure simultaneously carries out laser treatment, obtains part A；Requirement to phase-change material is the internal structure under laser irradiation
Change, the body of phase-change material is shunk, and is at least needed with reducing pel spacing in luminescent layer and sub-pixel spacing, laser treatment
Irradiate the gap between pixel and pixel, and the gap between sub-pixel and sub-pixel.
Step 2: making thin film transistor (TFT) (TFT), anode and cavitation layer successively on second substrate, part B is obtained；
Step 3: make the luminescent layer of part A and the cavitation layer fitting of part B；And
Step 4: removing the first substrate and the phase-change material layers, it is sequentially prepared in the position of former phase-change material layers
Electronic shell and cathode, obtain the displayer after encapsulation.
One kind as the application method is improved, and phase-change material layers is coated with the first substrate, then in phase-change material layers
Upper evaporation luminescent layer.
One kind as the application method is improved, and the first substrate is glass substrate, on the first substrate mask film covering
After figure, laser treatment is carried out, so that phase-change material deforms, adjacent pixel and sub-pixel spacing is reduced, increases PPI.
The wavelength of the laser treatment is 308nm or 355nm, and energy density is 10~5000MJ/cm2, frequency is 10~3000Hz, energy
It is 1~500ns to measure as 10~1000 millijoules, time.
One kind as the application method is improved, by way of vacuum thermal evaporation, using luminous organic material described
The surface filming of phase-change material layers, obtains the luminescent layer.Luminescent material in luminescent layer determines the glow color of display,
By selecting different luminous organic materials to obtain feux rouges, blue light and green light, full-color EL display is realized, can also produce white
Light.
One kind as the application method is improved, and when luminescent layer is deposited, phase-change material layers do not change.It is i.e. therein
Phase-change material does not undergo phase transition or decomposes.The phase-change material layers are haloflex.
One kind as the application method is improved, and the thin film transistor (TFT) includes grid, insulating layer, source electrode and drain electrode, institute
The drain electrode and the anode for stating thin film transistor (TFT) are electrically connected.
As the application method one kind improve, finally by sputtering or be deposited by electronic shell and cathode be placed in luminescent layer it
On.The second substrate can use plastics, metal or glass material, since AMOLED can make on the substrate of unlike material
Make, such as choose the good sheet plastic of pliability or sheet metal replaces common glass substrate, can produce in shape can
The flexible display device of bending fold.
The application further relates to the displayer made by above-mentioned method, it includes second substrate, AMOLED hairs
Light region and encapsulated layer.The AMOLED light-emitting zones are arranged on second substrate, and encapsulated layer is arranged on AMOLED light-emitting zones
Top and surrounding, AMOLED light-emitting zones are encapsulated.The AMOLED light-emitting zones include the moon set gradually from top to bottom
Pole, electronic shell, luminescent layer, cavitation layer, anode and TFT.The TFT is bonded with the second substrate.
Embodiment 1
As shown in Figure 1, the structure for the displayer that herein described method provides and existing displayer
Identical, the displayer includes second substrate 1, AMOLED light-emitting zones and encapsulated layer 8, the AMOLED light-emitting zones
It is arranged on second substrate 1, encapsulated layer 8 is arranged on top and the surrounding of AMOLED light-emitting zones, and AMOLED light-emitting zones are sealed
Dress.
The AMOLED light-emitting zones include set gradually from top to bottom cathode 7, electronic shell 6, luminescent layer 51/52/53,
Cavitation layer 4, anode 3 and thin film transistor (TFT) 2 (TFT).The thin film transistor (TFT) 2 is bonded with the second substrate 1.
Wherein, the second substrate 1 is generally made of transparent polymer material, as the substrate of displayer, such as
Polyimides (PI).The thin film transistor (TFT) 2 includes grid, gate insulation layer, active layer, source electrode and drain electrode, the drain electrode and institute
Anode 3 is stated to be electrically connected.The luminescent layer 51/52/53 includes a variety of luminous organic materials.Fig. 2 is the arrangement of standard rgb pixel
Schematic diagram.Several pixels 210 are contained in the figure, the shape of pixel 210 is generally rectangular, and each pixel 210 includes
Three sub-pixels, the shape of sub-pixel is substantially also rectangular, and three sub-pixels are respectively red 211, green 212 and blue 213 three primary colors,
It can not arranged in any permutation with the arrangement mode in Fig. 2 the position of certain three sub-pixels.Exist between pixel and pixel
Non-luminous region between pixel, there is non-luminous region between sub-pixel between sub-pixel and sub-pixel.Certain pixel 210 and son
The shape of pixel is not limited to rectangle, can also be regular hexagon, triangle, circle, irregular polygon etc..
As shown in figure 3, the manufacturing process of the application part A 30 is：Phase transformation material is deposited successively in the side of first substrate 10
The bed of material 9 and luminescent layer 51/52/53, the phase-change material layers 9 are bonded with first substrate 10, and the luminescent layer 51/52/53 is distributed
It is bonded in side of the phase-change material layers 9 away from first substrate 10, and with phase-change material layers 9.Then, in the another of first substrate 10
Side makes mask film covering figure 111/112/113 and carries out laser treatment, obtains part A 30.
According to the calculation formula of PPI：
The AA regions are display area.It on the premise of the light-emitting area of display area is constant, need to such as increase PPI, need
Increase the number of pixels on unit area.Different from the technique that the prior art is successively deposited, the application is in displayer
Preparation process in use phase-change material layers, using the characteristic that it undergoes phase transition in the case where temperature and intensity of illumination change,
Reduce the spacing between adjacent pixel, so as to increase PPI.Requirement to phase-change material is that internal structure changes under laser irradiation
Become, the body of phase-change material is shunk, to reduce the pel spacing and sub-pixel spacing in luminescent layer 51/52/53.At the same time foregoing
When luminescent layer 51/52/53 is deposited, phase-change material does not undergo phase transition or decomposes.In the present embodiment, the phase-change material selects chlorine
Change polyethylene (CPE), i.e., the saturation high molecular material that high density polyethylene (HDPE) (HDPE) is generated through chlorination substitution reaction, composition member
Element is C, H and Cl, and chlorinity is generally 30~50%.
The first substrate 10 is silicon or ITO, after making mask pattern on first substrate 10, is carried out at laser
Reason, so that phase-change material deforms, reduces adjacent pixel and sub-pixel spacing, increases PPI, the wavelength of the laser treatment is
308nm or 355nm, energy density are 10~5000MJ/cm2, frequency is 10~3000Hz, and energy is 10~1000 millijoules, when
Between be 1~500ns.
By way of vacuum thermal evaporation, using luminous organic material in the surface filming of phase-change material layers 9, obtain described
Luminescent layer 51/52/53.Luminescent material in luminescent layer 51/52/53 determines the glow color of display, different by selecting
Luminous organic material can obtain feux rouges, blue light and green light, realize full-color EL display, white light can also be produced.
Next, evaporated film transistor 2, anode 3 and cavitation layer 4 successively on second substrate 1, obtain part B 31.Institute
State thin film transistor (TFT) 2 to be bonded with second substrate 1, anode 3 is bonded with thin film transistor (TFT) 2, and cavitation layer 4 is bonded with anode 3.Then lead to
Crossing evaporation is bonded the luminescent layer 51/52/53 of part A 30 and the cavitation layer 4 of part B 31, this process is as shown in Figure 4.
Finally, 1~500ns is handled at a temperature of higher than 170 DEG C, phase-change material layers 9 is divided with luminescent layer 51/52/53
From to remove first substrate 10 and phase-change material layers 9.Steamed successively in the opposite side that luminescent layer 51/52/53 is bonded with cavitation layer 4
Electronic shell 6 and cathode 7 are plated, the displayer is obtained after encapsulation.
In the present embodiment, phase-change material shrinkage rates are about 1/3, initial between adjacent pixel in luminescent layer 51/52/53
Spacing is 100 μm, 15 μm of initial spacing average out between adjacent subpixels, is 5 μm after contraction.For 55inch displays,
The PPI increases about 5% compared with comparative example.
Comparative example
Without using phase-change material layers 9, according to second substrate 1-TFT2- anode 3- cavitation layer 4- luminescent layers 51/52/53- electricity
The order of sublayer 6- cathode 7- encapsulated layers 8 successively prepares displayer, its architectural feature is same as Example 1, luminescent layer
15 μm of the initial spacing average out to of 51/52/53 sub-pixel, adjacent pixel spacing is 100 μm, for 55inch displays, PPI
For 2K.
It is not for limiting claim although the application is disclosed as above with preferred embodiment.Any this area skill
Art personnel can make some possible variations and modification on the premise of the application design is not departed from, therefore the application
Protection domain should be subject to the scope that claim is defined.
Claims (9)
1. a kind of production method of displayer, it is characterised in that the method includes at least following steps：
Step 1: after being sequentially prepared phase-change material layers and luminescent layer in the side of first substrate, covered in the opposite side of first substrate
Lid mask pattern simultaneously carries out laser treatment, obtains part A；
Step 2: making thin film transistor (TFT), anode and cavitation layer successively on second substrate, part B is obtained；
Step 3: make the luminescent layer of part A and the cavitation layer fitting of part B；And
Step 4: removing the first substrate and the phase-change material layers, electronics is sequentially prepared in the position of former phase-change material layers
Layer and cathode, obtain the displayer after encapsulation,
In step 1, the requirement to phase-change material is that internal structure changes under laser irradiation, and the body of phase-change material is shunk,
To reduce the pel spacing and sub-pixel spacing in luminescent layer,
Laser treatment at least needs to irradiate the gap between pixel and pixel, and the gap between sub-pixel and sub-pixel.
2. according to the method described in claim 1, it is characterized in that, the first substrate is glass substrate.
3. according to the method described in claim 1, it is characterized in that, the wavelength of the laser treatment is 308nm or 355nm, energy
Metric density is 10~5000MJ/cm2, frequency is 10~3000Hz, and energy is 10~1000 millijoules, and the time is 1~500ns.
4. according to the method described in claim 1, it is characterized in that, by way of vacuum thermal evaporation, using organic light emission material
Expect the surface filming in the phase-change material layers, obtain the luminescent layer.
5. according to the method described in claim 4, it is characterized in that, when the luminescent layer is deposited, the phase-change material layers are not
Change.
6. according to the method described in claim 5, it is characterized in that, the phase-change material in the phase-change material layers is chlorinated polyethylene
Alkene.
7. according to the method described in claim 1, it is characterized in that, electronic shell and cathode are placed in by sputtering or evaporation process
On luminescent layer.
8. a kind of displayer, it is characterised in that the displayer passes through any one of claim 1 to 7 institute
The method stated is prepared.
9. displayer according to claim 8, it is characterised in that the display include second substrate,
AMOLED light-emitting zones and encapsulated layer, the AMOLED light-emitting zones are arranged on second substrate, and encapsulated layer is arranged on AMOLED
The top of light-emitting zone and surrounding, AMOLED light-emitting zones are encapsulated, and the AMOLED light-emitting zones are included from top to bottom successively
Cathode, electronic shell, luminescent layer, cavitation layer, anode and the thin film transistor (TFT) of setting, the thin film transistor (TFT) and the second substrate
Fitting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610863729.0A CN106328830B (en) | 2016-09-29 | 2016-09-29 | The production method and displayer of displayer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610863729.0A CN106328830B (en) | 2016-09-29 | 2016-09-29 | The production method and displayer of displayer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106328830A CN106328830A (en) | 2017-01-11 |
| CN106328830B true CN106328830B (en) | 2018-04-24 |
Family
ID=57820219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610863729.0A Active CN106328830B (en) | 2016-09-29 | 2016-09-29 | The production method and displayer of displayer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106328830B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342306A (en) * | 2017-06-14 | 2017-11-10 | 合肥市惠科精密模具有限公司 | A kind of AMOLED display panels and preparation method thereof |
| CN107342307A (en) * | 2017-06-14 | 2017-11-10 | 合肥市惠科精密模具有限公司 | A kind of AMOLED display modules |
| CN108598120A (en) * | 2018-04-27 | 2018-09-28 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, display panel and display device |
| CN111326638B (en) * | 2018-12-14 | 2021-10-26 | 云谷（固安）科技有限公司 | Light emitting unit and manufacturing method thereof |
| CN111697152A (en) * | 2019-03-14 | 2020-09-22 | 陕西坤同半导体科技有限公司 | Organic light-emitting device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165687A (en) * | 1999-06-29 | 2000-12-26 | Eastman Kodak Company | Standard array, programmable image forming process |
| KR20090028413A (en) * | 2007-09-13 | 2009-03-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Manufacturing method of light emitting device, and evaporation donor substrate |
| JP5853454B2 (en) * | 2011-07-15 | 2016-02-09 | 富士通株式会社 | Infrared detector and method of manufacturing infrared detector |
| US9293197B2 (en) * | 2011-08-15 | 2016-03-22 | Lockheed Martin Corporation | Reconfigurable phase change material masks for electro-optical compressive sensing |
-
2016
- 2016-09-29 CN CN201610863729.0A patent/CN106328830B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106328830A (en) | 2017-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106328830B (en) | The production method and displayer of displayer | |
| CN108172605B (en) | Organic light emitting diode substrate, preparation method thereof and display panel | |
| CN103489894B (en) | Active matrix organic electroluminescent display device, display device and preparation method thereof | |
| JP4220277B2 (en) | Active matrix organic electroluminescent device | |
| US10529957B2 (en) | Organic light emitting diode display and manufacturing method thereof | |
| US9214501B2 (en) | In-cell OLED touch display panel structure | |
| US9184420B2 (en) | Digitized OLED light source | |
| CN108074958A (en) | Display device | |
| CN107464831A (en) | A kind of dot structure and display device | |
| CN108231845B (en) | Display panel and electronic equipment | |
| US9679953B2 (en) | WOLED back panel and method of manufacturing the same | |
| CN104835830B (en) | A kind of OLED substrate for display and display device | |
| EP3514832A2 (en) | Electroluminescence display device | |
| TWI559526B (en) | Organic light-emitting device and pixel array | |
| CN1550846A (en) | Organic electroluminescent device and electronic device | |
| CN108538896A (en) | Oled pixel structure and oled display panel | |
| CN108511506A (en) | A kind of oled substrate and display panel | |
| CN108364976A (en) | Top emitting display panel, display device and preparation method thereof | |
| CN106935627A (en) | The manufacture method of display device and display device | |
| CN107394050B (en) | A kind of OLED display panel, display device and its control method | |
| KR101849579B1 (en) | Method of manufacturing organic light emitting display device | |
| CN106960896B (en) | A kind of preparation method of photomask board and graphene light-emitting display device | |
| US20190067402A1 (en) | Display panel and manufacturing method thereof and display device | |
| CN109166897A (en) | Transparent display panel, preparation method and display device | |
| KR100501427B1 (en) | Method of manufacturing active matrix type electroluminescence display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |