CN106328737A - Preparation method of flexible copper indium gallium selenide thin-film solar cell monolithic integrated assembly - Google Patents
Preparation method of flexible copper indium gallium selenide thin-film solar cell monolithic integrated assembly Download PDFInfo
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- CN106328737A CN106328737A CN201610830406.1A CN201610830406A CN106328737A CN 106328737 A CN106328737 A CN 106328737A CN 201610830406 A CN201610830406 A CN 201610830406A CN 106328737 A CN106328737 A CN 106328737A
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- 239000010409 thin film Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000007772 electrode material Substances 0.000 claims abstract description 17
- 238000011049 filling Methods 0.000 claims abstract description 7
- 238000010329 laser etching Methods 0.000 claims abstract description 7
- 230000010354 integration Effects 0.000 claims description 22
- 210000001142 back Anatomy 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 238000013007 heat curing Methods 0.000 claims description 5
- 238000011416 infrared curing Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 241000931526 Acer campestre Species 0.000 claims description 4
- 238000001723 curing Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses a preparation method of a flexible copper indium gallium selenide thin-film solar cell monolithic integrated assembly, wherein the flexible copper indium gallium selenide thin-film solar cell sequentially comprises the following components from bottom to top: the device comprises a substrate, a back electrode layer, an absorption layer, a buffer layer, a high-resistance layer and a transparent conducting layer; the preparation method comprises the following steps: step 1, etching at least one group of channels on a flexible copper indium gallium selenide thin-film solar cell by adopting a laser etching method, wherein each group of channels comprises a first channel, a second channel and a third channel; the bottom surface of the first channel is the upper surface of the substrate; the second channel is positioned between the first channel and the third channel; the bottom surface of the second channel is the upper surface of the back electrode layer; the bottom surface of the third channel is positioned between the upper surface of the high-resistance layer and the upper surface of the back electrode layer; step 2, pouring an insulating material into the first channel and curing; step 3, filling electrode materials and curing; and 4, leading out the positive electrode and the negative electrode from the monolithic integrated assembly, and then packaging.
Description
Technical field
The present invention relates to technical field of solar cells, particularly relate to a kind of flexible CIGS thin-film solar cell monolithic
The preparation method of integrated package.
Background technology
In various thin film solar cell systems, CIGS Cu (In, Ga) Se2(being called for short CIGS) thin film solar cell tool
There are photoelectric transformation efficiency height, good stability, a feature that Radiation hardness is strong, flexible substrate CIGS thin film solar cell lightweight, can
Winding, expansion mode are flexible, quality is higher than power, have more wide application prospect.
The conventional preparation techniques of glass substrate CIGS thin-film solar cell single-chip integration assembly is to deposit back of the body electricity
Carry out the most afterwards ruling for the first time, deposit absorbent layer, cushion and resistive formation subsequently, then carry out second time and rule, redeposited saturating
Bright conductive layer, finally carries out third time and rules.Use conventional methods preparation flexible substrate CIGS thin film solar cell monolithic collection
Become assembly, easily the functional layer material character of CIGS thin-film solar cell subsequent deposition is brought adverse effect, the most right
For volume to volume technique, it is more easy to be deformed, fold, ftractures, position the problems such as difficulty, and whole process needs twice interruption too
The preparation of positive electricity pond functional layer is rule, and reduces efficiency prepared by assembly.
For flexible CIGS thin-film solar cell single-chip integration assembly, preparation process uses the mode of machinery
Line, owing to being contact, when applying external force, battery is easily bent, and depth of score is wayward, the most easily makes syringe needle frequent
Damage, and damage thin film, and there is " overlap " problem, cause ruling linear irregularly, actual scribe widths is than defining width
Width, interconnection region (dead band) increases, and assembly current loss is big.
In prior art, application publication number is that the patent of invention of CN 103618030A discloses a kind of flexible PI substrate CIGS
The method of hull cell laser ablation monomer integrated package, comprises: step 1, first by laser to battery by top electrode always
It is inscribed into the upper surface of PI substrate, forms the first raceway groove；Step 2, fills insulating cement to the first raceway groove coating；Step 3, re-uses
Laser is inscribed into the upper surface of back electrode to battery by top electrode always, forms the second raceway groove；Step 4, at the second raceway groove and
Extend and cross the top coating silver slurry of the first raceway groove on top electrode and by the top of the second raceway groove；Step 5, uses laser to electricity
Pond is etched into the upper surface of resistive formation by top electrode, forms triple channel, completes the interconnected interconnection of CIGS hull cell.But
The preparation method of whole monomer integrated package is interspersed with two techniques of filling insulating cement and coating silver slurry (step 2 and step 4)
Step so that second time is difficult to precise positioning with third time line (step 3 and step 5), causes assembly dead zone area to increase, is subject to
Light area reduces, and more has the risk that yield rate is low, is particularly unsuitable for volume to volume production technology, and complex production process consumption
Time, reduce the efficiency that assembly produces.
Summary of the invention
The technical problem to be solved in the present invention is: provide a kind of flexible CIGS thin-film solar cell single-chip integration assembly
Preparation method.The preparation method of this flexible CIGS thin-film solar cell single-chip integration assembly has assembly dead zone area
Little, technical process is simple, production efficiency is high and be easy to use volume to volume large area, the feature of large-scale production.
The present invention solves that technical problem is adopted the technical scheme that present in known technology:
The preparation method of a kind of flexible CIGS thin-film solar cell single-chip integration assembly, described flexible copper indium gallium selenide is thin
Film solar cell includes the most successively: substrate (1), dorsum electrode layer (2), absorbed layer (3), cushion (4), resistive formation (5),
Transparency conducting layer (6)；At least comprise the steps:
Step 101, employing laser-etching process etch at least from top to bottom on flexible CIGS thin-film solar cell
One group of raceway groove and covered wire raceway groove (12), often group raceway groove includes Article 1 raceway groove (7), Article 2 raceway groove (8), Article 3 raceway groove
(9)；Wherein: the upper surface that bottom surface is substrate (1) of described Article 1 raceway groove (7)；Described Article 2 raceway groove (8) is positioned at Article 1
Between raceway groove (7) and Article 3 raceway groove (9)；The upper surface that bottom surface is dorsum electrode layer (2) of described Article 2 raceway groove (8)；Described
The bottom surface of Article 3 raceway groove (9) is positioned at the upper surface of resistive formation (5) between the upper surface of dorsum electrode layer (2)；Described covered wire
The upper surface that bottom surface is substrate (1) of raceway groove (12)；
Step 102, in Article 1 raceway groove (7), irrigate insulant (10) solidify；
Step 103, filling electrode material also solidify, particularly as follows: fill electrode material (11) in Article 2 raceway groove (8)；
Meanwhile, above-mentioned electrode material (11) crosses Article 1 raceway groove (7), and then covers the top electrode to Article 1 raceway groove (7) side, makes
Obtaining silver-colored slurry to be fully contacted with back electrode, the back electrode of the top electrode battery with later of previous sub-battery is connected, it is achieved
Series connection between sub-battery；
Step 104, from single-chip integration assembly draw positive and negative electrode, be then packaged.
As preferably, the present invention additionally uses following technical characteristic:
Further: the optical maser wavelength that described laser-etching process uses is 1064nm or 532nm.
Further: described Article 1 raceway groove (7), Article 2 raceway groove (8), Article 3 raceway groove (9) exist interval each other.
It is further: between described Article 1 raceway groove (7), Article 2 raceway groove (8), Article 3 raceway groove (9) the most do not exist
Every.
Further: the solidification in described step 102 uses the method for ultra-violet curing, infrared curing or heat cure.
The present invention has the advantage that with good effect:
1. the present invention provides the preparation method of a kind of flexible CIGS thin-film solar cell single-chip integration assembly, described list
The preparation of sheet integrated package all grows after (deposition) completes in all of functional layer of CIGS thin-film solar cell and carries out,
Avoid and depositing the middle scribe step of interting of each functional material to each function of CIGS thin-film solar cell subsequent deposition
The adverse effect that layer material character is brought, and be easily deformed, the rough sledding such as fold, cracking, especially to volume to volume
For technique.
2. the present invention provides the preparation method of a kind of flexible CIGS thin-film solar cell single-chip integration assembly, described list
Three raceway grooves in sheet integrated package preparation process and covered wire are to use full laser scribing, it is to avoid employing mechanical system line
The flexible deformation of battery brought, depth of score is wayward, the machinery easy frequent breakage of syringe needle, and damage thin film, and due to
The line that existence " overlap " causes is linear irregularly, and actual scribe widths is wider than definition width, and interconnection region (dead band) increases, group
The problem that part current loss is big.
3. the present invention provides the preparation method of a kind of flexible CIGS thin-film solar cell single-chip integration assembly, described list
The preparation of sheet integrated package is to use Same Wavelength laser one step to mark three raceway grooves and covered wire, it is not necessary to displacement, can avoid three
Bar raceway groove and covered wire use the problem that processing step is many, production efficiency is low that different wave length laser scribing brings, and also keep away simultaneously
Having exempted from the precise positioning that interspersed processing step brings between three line difficult, assembly dead zone area increases, and light-receiving area reduces,
Photoelectric transformation efficiency is low, and complex production process is time-consuming, the problem that production efficiency is low.
Accompanying drawing explanation
Fig. 1 is flexible CIGS thin-film solar cell structural representation.
Fig. 2 is position relationship and the schematic diagram of depth information of three raceway grooves.
Fig. 3 is injection insulant schematic diagram in Article 1 raceway groove.
Fig. 4 is flexible CIGS thin-film solar cell single-chip integration modular construction schematic diagram of the present invention.
Fig. 5 is flexible CIGS thin-film solar cell single-chip integration assembly plan view of the present invention.
1, substrate；2, dorsum electrode layer；3, absorbed layer；4, cushion；5, resistive formation；6, transparency conducting layer；7, Article 1 ditch
Road；8, Article 2 raceway groove；9, Article 3 raceway groove；10, insulant；11, electrode material；12, covered wire raceway groove.
Detailed description of the invention
For the summary of the invention of the present invention, feature and effect can be further appreciated that, hereby enumerate following example, and coordinate accompanying drawing
Describe in detail as follows:
Refer to Fig. 1 to Fig. 5, the preparation method of a kind of flexible CIGS thin-film solar cell single-chip integration assembly, institute
State flexible CIGS thin-film solar cell to include the most successively: substrate 1, dorsum electrode layer 2, absorbed layer 3, cushion 4, height
Resistance layer 5, transparency conducting layer 6；Comprise the steps:
Step 101, employing laser-etching process etch at least from top to bottom on flexible CIGS thin-film solar cell
One group of raceway groove and covered wire raceway groove 12, often group raceway groove includes Article 1 raceway groove 7, Article 2 raceway groove 8, Article 3 raceway groove 9；Above-mentioned
Article one, raceway groove 7, Article 2 raceway groove 8, Article 3 raceway groove 9 use disposable etching technique to complete, and can improve production effect by a relatively large margin
Rate and the yield rate of product；Wherein: the upper surface that bottom surface is substrate 1 of described Article 1 raceway groove 7；Described Article 2 raceway groove 8
Between Article 1 raceway groove 7 and Article 3 raceway groove 9；The upper surface that bottom surface is dorsum electrode layer 2 of described Article 2 raceway groove 8；Described
The bottom surface of Article 3 raceway groove 9 at the upper surface of resistive formation 5 between the upper surface of dorsum electrode layer 2；As preferably, the described 3rd
The bottom surface of bar raceway groove 9 is upper surface or the upper surface of dorsum electrode layer 2 of resistive formation 5；The bottom surface of described covered wire raceway groove 12 is
The upper surface of substrate 1
Step 102, in Article 1 raceway groove 7, irrigate insulant 10 solidifying；
Step 103, filling electrode material also solidify, particularly as follows: fill electrode material 11 in Article 2 raceway groove 8；Meanwhile,
Above-mentioned electrode material 11 crosses Article 1 raceway groove 7, and then covers the top electrode to Article 1 raceway groove 7 side so that silver slurry and the back of the body
Electrode is fully contacted, and the back electrode of the top electrode battery with later of previous sub-battery is connected, it is achieved between sub-battery
Series connection；
Step 104, from single-chip integration assembly draw positive and negative electrode, be then packaged.
As preferably, in the preferred embodiment:
The optical maser wavelength that described laser-etching process uses is 1064nm or 532nm.
There is interval each other in described Article 1 raceway groove 7, Article 2 raceway groove 8, Article 3 raceway groove 9.
The most there is not interval in described Article 1 raceway groove 7, Article 2 raceway groove 8, Article 3 raceway groove 9.
Solidification in described step 102 uses the method for ultra-violet curing, infrared curing or heat cure.
As preferably: each step in above preferred embodiment particularly as follows:
Step 1. is rule.In laser scoring operations system and software after programming also setup parameter, use laser to flexibility
CIGS thin-film solar cell is rule, and a step marks three raceway grooves and covered wire, and Article 1 raceway groove needs to expose substrate,
Transparency conducting layer, resistive formation, cushion, absorbed layer and back electrode are all removed, it is achieved the separation of sub-battery floor electrode.The
Article two, raceway groove needs to expose back electrode, transparency conducting layer, resistive formation, cushion, absorbed layer is removed.Article 3 raceway groove need by
Transparency conducting layer is scratched, it is achieved the separation between each sub-battery top electrode.Covered wire needs to expose substrate, by transparency conducting layer,
Resistive formation, cushion, absorbed layer and back electrode all remove, it is achieved the separation of assembly.
Step 2. is injected insulant and solidifies.In Article 1 raceway groove, inject insulant and solidify.
Step 3. is filled electrode material and solidifies.In electrode material Article 2 to be filled in raceway groove, and to cross first
The top of bar raceway groove, covers the top electrode of Article 1 raceway groove side, it is ensured that between electrode material and the back electrode of filling fully
Contact so that the back electrode of the top electrode battery with later of previous sub-battery is connected, it is achieved the string between sub-battery
Connection.
Step 4. draws positive and negative electrode from single-chip integration assembly, is then packaged.
Described in step 1 three raceway groove and covered wire, use Same Wavelength laser one step to mark, it is not necessary to mobile
Battery location.Line described in above-mentioned steps 1, the optical maser wavelength of use is 1064nm or 532nm.
Between Article 1 raceway groove described in above-mentioned steps 1 and Article 2 raceway groove, Article 2 raceway groove and Article 3 raceway groove it
Between all can there is a determining deviation, it is also possible to continuously away from.
The preparation method of above-mentioned a kind of flexible CIGS thin-film solar cell single-chip integration assembly, described in step 1
Article 3 raceway groove can only remove transparency conducting layer, it is also possible to remove the above all of functional layer of dorsum electrode layer.
Injection insulant described in above-mentioned steps 2 is that the method using point gum machine or silk screen printing completes.Use CCD
After photographic head precise positioning, the first raceway groove injects insulant, at least ensures that the side away from Article 2 raceway groove is the most exhausted
Edge.
The solidification of the insulant described in above-mentioned steps 2, can use the side of ultra-violet curing, infrared curing or heat cure
Formula.
Filling electrode material described in above-mentioned steps 3 is the method using silk screen printing, uses CCD camera precisely fixed
Printing after Wei, printed pattern is pectination, zigzag or column.
Electrode material described in above-mentioned steps 3 is silver slurry or other materials conducted electricity very well.The solidification of electrode material,
The mode of heat cure or infrared curing can be used.
Above embodiments of the invention are described in detail, but described content have been only presently preferred embodiments of the present invention,
It is not to be regarded as the practical range for limiting the present invention.All impartial changes made according to the present patent application scope and improvement etc.,
Within all should still belonging to the patent covering scope of the present invention.
Claims (5)
1. a preparation method for flexible CIGS thin-film solar cell single-chip integration assembly, described flexible copper indium gallium selenide thin-film
Solar cell includes the most successively: substrate (1), dorsum electrode layer (2), absorbed layer (3), cushion (4), resistive formation (5), thoroughly
Bright conductive layer (6)；At least comprise the steps:
Step 101, employing laser-etching process etch least one set from top to bottom on flexible CIGS thin-film solar cell
Raceway groove and covered wire raceway groove (12), often group raceway groove includes Article 1 raceway groove (7), Article 2 raceway groove (8), Article 3 raceway groove (9)；Its
In: the upper surface that bottom surface is substrate (1) of described Article 1 raceway groove (7)；Described Article 2 raceway groove (8) is positioned at Article 1 raceway groove
(7) and between Article 3 raceway groove (9)；The upper surface that bottom surface is dorsum electrode layer (2) of described Article 2 raceway groove (8)；Described 3rd
The bottom surface of bar raceway groove (9) is positioned at the upper surface of resistive formation (5) between the upper surface of dorsum electrode layer (2)；Described covered wire raceway groove
(12) bottom surface is the upper surface of substrate (1)；
Step 102, in Article 1 raceway groove (7), irrigate insulant (10) solidify；
Step 103, filling electrode material also solidify, particularly as follows: fill electrode material (11) in Article 2 raceway groove (8)；Meanwhile,
Above-mentioned electrode material (11) crosses Article 1 raceway groove (7), and then covers the top electrode to Article 1 raceway groove (7) side so that silver
Slurry is fully contacted with back electrode, and the back electrode of the top electrode battery with later of previous sub-battery is connected, it is achieved son electricity
Series connection between pond；
Step 104, from single-chip integration assembly draw positive and negative electrode, be then packaged.
The preparation method of flexible CIGS thin-film solar cell single-chip integration assembly the most according to claim 1, its feature
It is: the optical maser wavelength that described laser-etching process uses is 1064nm or 532nm.
The preparation method of flexible CIGS thin-film solar cell single-chip integration assembly the most according to claim 1, its feature
It is: described Article 1 raceway groove (7), Article 2 raceway groove (8), Article 3 raceway groove (9) exist interval each other.
The preparation method of flexible CIGS thin-film solar cell single-chip integration assembly the most according to claim 1, its feature
It is: described Article 1 raceway groove (7), Article 2 raceway groove (8), Article 3 raceway groove (9) the most do not exist interval.
The preparation method of flexible CIGS thin-film solar cell single-chip integration assembly the most according to claim 1, its feature
It is: the solidification in described step 102 uses the method for ultra-violet curing, infrared curing or heat cure.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098273A (en) * | 2019-04-17 | 2019-08-06 | 上海空间电源研究所 | Multijunction gallium arsenide solar cell monomer integrates the preparation method of inline component |
| CN110649103A (en) * | 2019-10-28 | 2020-01-03 | 天津华鼎科技有限公司 | CIGS (copper indium gallium selenide) thin film assembly of solar unmanned aerial vehicle and internal and external cascading method thereof |
| CN112382673A (en) * | 2020-10-21 | 2021-02-19 | 重庆神华薄膜太阳能科技有限公司 | Thin film solar cell module and preparation method thereof |
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