CN106328615B - It is a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip - Google Patents
It is a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip Download PDFInfo
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- CN106328615B CN106328615B CN201610841253.0A CN201610841253A CN106328615B CN 106328615 B CN106328615 B CN 106328615B CN 201610841253 A CN201610841253 A CN 201610841253A CN 106328615 B CN106328615 B CN 106328615B
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Abstract
The present invention relates to a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, belongs to microfluid conveying technology field.Electric osmose pump configuration includes entrance channel, sealant, positive electrode, electroosmotic pump lower case, heat-conducting plate, inlet chamber, aeroge pumping passage, outlet chamber, negative electrode, outlet flow, electroosmotic pump upper housing.Coolant liquid flows into electroosmotic pump inlet chamber from entrance channel, flows out electroosmotic pump through outlet flow by outlet chamber by aeroge pumping passage under electric field driven.Compared with traditional electroosmotic pump, the aerogel material that present invention employs porositys is high, thermal conductivity is extremely low is as pumping passage, the advantage is that: dramatically increasing pump discharge, the Joule heat of high voltage pumping generation is reduced to the Thermal feedback of microelectronic chip, radiating efficiency is improved, the cooling of such as computer CPU chip, biological detection chip, photoelectric conversion chip microelectronic chip is widely portable to.
Description
Technical field
Present invention relates particularly to microfluid conveying technology fields, and in particular to a kind of for cooling down the airsetting of microelectronic chip
Glue electroosmotic pump.
Background technique
In the epoch of MEMS (MEMS) high speed development, microelectronic chip have been widely used aerospace, automobile,
The multiple fields such as biomedical, environmental monitoring and defense military.Microelectronic chip is just promptly close to high integration, high assembling
The direction of degree, the high speed of service and volume microminiaturization is developed, but at the same time, the power of microelectronic chip is higher and higher, produces
Raw heat is more and more.If the radiating efficiency of electronic device is low, microelectronic chip active area temperature will be caused to rise, junction temperature
It increases, seriously affects the stability and reliability of electronic device.Therefore, how high efficiency and heat radiation have become restrict microelectronic chip to
The bottleneck problem of high-performance development.
Early stage such as micro heat pipe is cooling, using air as the cooling of the forced convection of medium, misting cooling radiating mode, not only dissipates
The thermal efficiency is low, and is difficult to meet the micromation demand of microelectronic component.Currently, micro- logical using electroosmotic pump as fluid drive apparatus
Road cooling system has ideal radiating efficiency, is the preferred radiating mode of microelectronic chip.
Being currently used for technical problem underlying existing for the electroosmotic pump of cooling microelectronic chip is that pump discharge is lower, serious shadow
Ring radiating efficiency.Dielectric particles are filled into capillary by a traditional porous media electroosmotic pump of filling out, and are filled using cellular glass
Capillary both ends, sintering form the plunger of capillary.Hole between this kind of electroosmotic pump dielectric particles is minimum, and pump discharge is only every
Tens nanoliters or several microlitres of minute.To solve this problem, some papers or patent use porous dielectric film electroosmotic pump, that is, use
Porous dielectric film replaces filling particulate media, but it is lower to be limited to porous media membrane porosity, and high voltage drive microfluid can one
Determine to improve pump discharge in degree.To further increase pump discharge, there is scholar to propose multiple single-stage porous dielectric film electricity of connecting
Seep pump, i.e. multi-level output electroosmotic pump.This method can no doubt effectively improve pump discharge, but the stabilization for electric osmose pump work of connecting
Property it is very poor, high flow capacity pumping is only capable of maintain 120-180 seconds.Importantly, above-mentioned several electroosmotic pumps are required to high driving
Voltage, microfluid stream will generate very high Joule heat during being pumped up channel, Joule heat will be by porous dielectric film or micro-
Channel part feeds back to the microelectronic chip for being badly in need of heat dissipation, necessarily reduces radiating efficiency.Traditional electroosmotic pump pumping passage is for example porous
Devitrified glass, the coefficient of heat conduction are 0.11~0.183Wm-1K-1, porosity is 29.95~50.07%, for this hole
For rate compared with the higher pumping passage of low heat conduction coefficient, pump discharge is lower, and the Joule heat generated in pumping procedure will serious shadow
Ring radiating efficiency.Therefore, a kind of novel electroosmotic pump is urgently researched and developed in the heat dissipation of microelectronic chip, has both been able to satisfy the need that high flow pump is sent
It asks, while reducing influence of the Joule heat of high voltage pumping generation to radiating efficiency.
Summary of the invention
For the limitation of the prior art, the present invention proposes a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, adopts
Pumping passage of the aerogel material instead of porous dielectric film in traditional electroosmotic pump as microfluid is used, due to aerogel material hole
Rate (> 80%) is much higher than porous dielectric film, and pore-size distribution is extremely wide (0.3~100nm), can effectively improve electroosmotic pump pump flow
Amount.In addition, aeroge has extremely low thermal coefficient, thermal conductivity is 0.012~0.020W m under room temperature-1K-1, it is preferably to receive
Meter Duo Kong ultra heat insulating material.It is used as the pumping passage of electroosmotic pump, high voltage the Joule heat generated can be pumped and is limited in
In pumping passage, influence of the Joule heat to radiating efficiency is effectively reduced.Therefore, the present invention proposes a kind of using aerogel material work
It for the novel electroosmotic pump of pumping passage, can be used for cooling down microelectronic chip, both met the needs of high flow capacity pumping, while can be significant
Reduce influence of the Joule heat to radiating efficiency.
The technical solution that the present invention uses is: it is a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, including
Electroosmotic pump upper housing and electroosmotic pump lower case, the bottom of the electroosmotic pump lower case is equipped with to be connect with the microelectronic chip that need to be radiated
The heat-conducting plate of touching is equipped with outlet chamber and inlet chamber between the electroosmotic pump upper housing and electroosmotic pump lower case, described
Outlet chamber and inlet chamber also tiller are equipped with positive electrode and corresponding negative electrode, the outlet chamber and inlet chamber it
Between be additionally provided with aeroge pumping passage, separated between the outlet chamber and inlet chamber by aeroge pumping passage.
The positive electrode and negative electrode is respectively placed in inlet chamber and outlet chamber's side wall position.
The outlet chamber and inlet chamber is additionally provided with entrance channel and outlet flow respectively, and length is 100 μm~
It 0.5cm, is highly 30~800 μm.
It is additionally provided between the electroosmotic pump upper housing and electroosmotic pump lower case and plays sealing function, prevent coolant liquid from oozing out
Sealant.
The positive electrode and negative electrode is made of inert metal, alloy or conducing composite material, and width is 0.07~
1.4cm is highly 70~1300 μm, with a thickness of 50~300 μm.
The aeroge pumping passage is made of silica aerogel material, and porosity is 80%~90%, width
For 0.05~1.2cm, with a thickness of 50 μm~0.3cm, be highly 80~1300 μm.
The electroosmotic pump upper housing and electroosmotic pump lower case is made of insulating stiff material.
The heat-conducting plate is made of high heat conductive insulating composite polymer material.
The aeroge pumping passage is condensed using silica aerogel material by sol-gel method or 3D printing
Seasoning is prepared.
The aeroge electroosmotic pump uses intensity to drive for the driving electric field of 30-1000V.
The beneficial effects of the present invention are: the present invention provides a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip,
Aeroge electroosmotic pump of the present invention for cooling down microelectronic chip is using silica aerogel material as electroosmotic pump
Pumping passage.Compared to porous media membrane channels used by traditional electroosmotic pump, aerosil has high hole
Rate, and pore-size distribution is extremely wide, is remarkably improved electroosmotic pump pump discharge.For microelectronic chip is cooling, electroosmotic pump is improved
Pump discharge can effectively improve cooling efficiency, this is most important for the job stability and reliability of microelectronic chip, in addition,
At work, electric field action driving coolant liquid flows through pumping passage to electroosmotic pump, in high driving voltage, necessarily leads to a large amount of
Joule heat, this partial heat will be fed back to by heat-conducting plate and need cooling microelectronic chip, and electroosmotic pump heat dissipation is seriously affected
Efficiency.Aerosil pumping passage is used in the present invention, and there is extremely low thermal coefficient, can will generate in pumping procedure
Joule heat be effectively limited in pumping passage, reduce heat to microelectronic chip transmit, be remarkably improved electroosmotic pump heat dissipation effect
Rate is of great significance for the cooling of microelectronic chip.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of aeroge electroosmotic pump of the present invention for cooling down microelectronic chip.
Fig. 2 is the present invention for cooling down the aeroge electroosmotic pump driving voltage of microelectronic chip and the relationship of pump discharge.
1- entrance channel in figure, 2- sealant, 3- positive electrode, 4- electroosmotic pump lower case, 5- heat-conducting plate, 6- inlet chamber,
7- aeroge pumping passage, 8- outlet chamber, 9- negative electrode, 10- outlet flow, 11- electroosmotic pump upper housing.
Specific embodiment
The specific embodiment of aeroge electroosmotic pump of the present invention for cooling down microelectronic chip is provided with reference to the accompanying drawing,
But the present invention is not limited to embodiments below.
As shown in Figure 1, a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, including electroosmotic pump upper housing (11) and
Electroosmotic pump lower case (4), the electroosmotic pump upper housing (11) and electroosmotic pump lower case (4) are insulating stiff material FR-4 epoxy
Glass cloth fiberboard is made, depending on specific size foundation electroosmotic pump overall dimensions, electroosmotic pump overall dimensions are as follows: 900 μm of length, width
900 μm of degree, 200 μm of height.The bottom of the electroosmotic pump lower case (4) is equipped with and leads with what the microelectronic chip that need to be radiated contacted
Hot plate (5), the heat-conducting plate (5) are made of high heat conductive insulating composite polymer material, for through silicone oil treated aluminium nitride
AlN whisker filled polytetrafluoroethylene, 700 μm of length, 700 μm of width.The electroosmotic pump upper housing (11) and electroosmotic pump lower casing
It is equipped with outlet chamber (8) and inlet chamber (6) between body (4), is additionally provided in the outlet chamber (8) and inlet chamber (6)
Positive electrode (3) and negative electrode (9), the positive electrode (3) and negative electrode (9) are using inert metal, alloy or conductive composite wood
Material is made, and it is highly 70~1300 μm, with a thickness of 50~300 μm that width, which is 0.07~1.4cm,.The positive electrode (3) and negative
Electrode (9) is respectively placed in inlet chamber (6) and outlet chamber (8) side wall position.The outlet chamber (8) and inlet chamber
(6) it is additionally provided with entrance channel (1) and outlet flow (10) respectively in, length is 300 μm~0.5cm, is highly 30~800 μm.
Be additionally provided with aeroge pumping passage (7) between the outlet chamber (8) and inlet chamber (6), the outlet chamber (8) with
Separated between inlet chamber (6) by aeroge pumping passage (7).The aeroge pumping passage (7) is silica gas
Gel rubber material is made, and porosity is 80%~90%, width is 0.05~1.2cm, with a thickness of 50 μm~0.3cm, be highly 80
~1300 μm.The aeroge pumping passage (7) uses sol-gel method or 3D printing by silica aerogel material
Condensation seasoning is prepared.Coolant liquid flows into inlet chamber 6 from entrance channel 1, is pumped under electric field driven by aeroge
Channel 7 flows into outlet chamber 8, flows out electroosmotic pump through outlet flow 10.
It is additionally provided between the electroosmotic pump upper housing (11) and electroosmotic pump lower case (4) and plays sealing function, prevented cold
But the sealant (2) of liquid exudation.
If selecting pure water as coolant liquid, when driving electric field intensity is 300~700V, electroosmotic pump pump discharge such as Fig. 2
Shown, pump discharge is apparently higher than traditional electroosmotic pump.
The above is only a preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-mentioned implementation
Example, all technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It should be pointed out that for the art
Those of ordinary skill for, several improvements and modifications without departing from the principles of the present invention, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, including electroosmotic pump upper housing (11) and electroosmotic pump lower case
(4), the bottom of the electroosmotic pump lower case (4) is equipped with the heat-conducting plate (5) contacted with the microelectronic chip that need to be radiated, feature
It is, outlet chamber (8) and inlet chamber (6) is equipped between the electroosmotic pump upper housing (11) and electroosmotic pump lower case (4),
Negative electrode (9) are equipped in the outlet chamber (8), are equipped with positive electrode (3) in the inlet chamber (6), the outlet
It is additionally provided between chamber (8) and inlet chamber (6) aeroge pumping passage (7), the outlet chamber (8) and inlet chamber
(6) separated between by aeroge pumping passage (7).
2. according to claim 1 a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, which is characterized in that described
Positive electrode (3) be placed in inlet chamber (6) side wall position, the negative electrode (9) is placed in outlet chamber (8) side wall position.
3. according to claim 1 a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, which is characterized in that described
Outlet chamber (8) in be equipped with outlet flow (10), be equipped with entrance channel (1) in the inlet chamber (6), length 100m
It~0.5 cm, is highly 30~800m.
4. according to claim 1 a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, which is characterized in that described
Electroosmotic pump upper housing (11) and electroosmotic pump lower case (4) between be additionally provided with and play sealing function, prevent coolant liquid from oozing out close
Sealing (2).
5. according to claim 2 a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, which is characterized in that described
Positive electrode (3) and negative electrode (9) be made of inert metal, alloy or conducing composite material, width is 0.07~1.4 cm,
Height is 70~1300m, with a thickness of 50~300m.
6. according to claim 1 a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, which is characterized in that described
Aeroge pumping passage (7) be made of silica aerogel material, porosity be 80%~90%, width be 0.05~1.2
Cm, with a thickness of the cm of 50m~0.3, highly be 80~1300m.
7. according to claim 1 a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, which is characterized in that described
Electroosmotic pump upper housing (11) and electroosmotic pump lower case (4) be made of insulating stiff material.
8. according to claim 1 a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, which is characterized in that described
Heat-conducting plate (5) be made of high heat conductive insulating composite polymer material.
9. according to claim 6 a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, which is characterized in that described
Aeroge pumping passage (7) dry legal system is condensed by sol-gel processing or 3D printing using silica aerogel material
It is standby to obtain.
10. according to claim 1 a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip, which is characterized in that institute
The aeroge electroosmotic pump stated uses intensity for the even strong driving electric field driving of 30-1000V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610841253.0A CN106328615B (en) | 2016-09-22 | 2016-09-22 | It is a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610841253.0A CN106328615B (en) | 2016-09-22 | 2016-09-22 | It is a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip |
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| Publication Number | Publication Date |
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| CN106328615A CN106328615A (en) | 2017-01-11 |
| CN106328615B true CN106328615B (en) | 2019-01-08 |
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| CN201610841253.0A Active CN106328615B (en) | 2016-09-22 | 2016-09-22 | It is a kind of for cooling down the aeroge electroosmotic pump of microelectronic chip |
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| US11876036B2 (en) | 2020-06-18 | 2024-01-16 | The Research Foundation For The State University Of New York | Fluid cooling system including embedded channels and cold plates |
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| CN1636124A (en) * | 2001-09-28 | 2005-07-06 | 莱兰德斯坦福初级大学理事会 | Electroosmotic microchannel cooling system |
| CN1768000A (en) * | 2003-03-28 | 2006-05-03 | 英特尔公司 | Electroosmotic pump using nanoporous dielectric frit |
| US7105382B2 (en) * | 2003-11-24 | 2006-09-12 | Intel Corporation | Self-aligned electrodes contained within the trenches of an electroosmotic pump |
| CN1890805A (en) * | 2003-10-16 | 2007-01-03 | 英特尔公司 | Electroosmotic pumps using porous frits for cooling integrated circuit stacks |
| CN101256195A (en) * | 2008-04-03 | 2008-09-03 | 东北大学 | Microfluid drive unit based on infiltration |
| CN101528017A (en) * | 2008-03-04 | 2009-09-09 | 瑞鼎科技股份有限公司 | Radiating component and radiating method |
| CN102655129A (en) * | 2012-02-07 | 2012-09-05 | 山东大学 | Miniature-channel liquid cooling substrate of integrated power electronics module with the moire fringe effect |
| CN104707673A (en) * | 2013-12-15 | 2015-06-17 | 中国科学院大连化学物理研究所 | Electroosmotic pump |
-
2016
- 2016-09-22 CN CN201610841253.0A patent/CN106328615B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1636124A (en) * | 2001-09-28 | 2005-07-06 | 莱兰德斯坦福初级大学理事会 | Electroosmotic microchannel cooling system |
| CN1768000A (en) * | 2003-03-28 | 2006-05-03 | 英特尔公司 | Electroosmotic pump using nanoporous dielectric frit |
| CN1890805A (en) * | 2003-10-16 | 2007-01-03 | 英特尔公司 | Electroosmotic pumps using porous frits for cooling integrated circuit stacks |
| US7105382B2 (en) * | 2003-11-24 | 2006-09-12 | Intel Corporation | Self-aligned electrodes contained within the trenches of an electroosmotic pump |
| CN101528017A (en) * | 2008-03-04 | 2009-09-09 | 瑞鼎科技股份有限公司 | Radiating component and radiating method |
| CN101256195A (en) * | 2008-04-03 | 2008-09-03 | 东北大学 | Microfluid drive unit based on infiltration |
| CN102655129A (en) * | 2012-02-07 | 2012-09-05 | 山东大学 | Miniature-channel liquid cooling substrate of integrated power electronics module with the moire fringe effect |
| CN104707673A (en) * | 2013-12-15 | 2015-06-17 | 中国科学院大连化学物理研究所 | Electroosmotic pump |
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