CN106328474A - Method for introducing impurities into gallium nitride at room temperature - Google Patents
Method for introducing impurities into gallium nitride at room temperature Download PDFInfo
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- CN106328474A CN106328474A CN201610899050.7A CN201610899050A CN106328474A CN 106328474 A CN106328474 A CN 106328474A CN 201610899050 A CN201610899050 A CN 201610899050A CN 106328474 A CN106328474 A CN 106328474A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 94
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000012535 impurity Substances 0.000 title claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 27
- 150000002500 ions Chemical class 0.000 claims abstract description 17
- 239000007787 solid Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims description 14
- 239000004568 cement Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052756 noble gas Inorganic materials 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 17
- 238000009826 distribution Methods 0.000 description 8
- 239000011797 cavity material Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
This invention discloses a method for introducing impurities into a gallium nitride material at room temperature, comprising the steps of first, the gallium nitride material or device mixed with impurities and the solid impurities source are placed in a plasma generated by using radio frequency in an inert gas, to make the atoms and / or ions of the solid impurities source enter the plasma. The atoms and / or ions of the impurities collide with the positive ions and electrons in the plasma to obtain kinetic energy and thereby enter into the gallium nitride material or device. The method is both convenient and economical. It is characterized by high doping concentration on the surface of the sample. It can realize super-shallow doping, and can introduce a variety of impurities at the same time, with no etching effect, therefore it is not only suitable for gallium nitride film or chip doping, but also suitable for doping for the partly completed gallium nitride device.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of low cost, without corrasion, be simultaneously suitable for material
The method at room temperature mixing impurity in gallium nitride with device.
Background technology
Gallium nitride is a kind of important semi-conducting material, is widely used in microwave regime luminous.In gallium nitride
Impurity has highly important impact to the character of gallium nitride, have left impurity, and gallium nitride seldom has anything to apply.Harsh longer
Not intentionally doped gallium nitride be typically N-type, be introduced therein to the impurity such as two race's element berylliums, magnesium and can get p-type gallium nitride, and
It is introduced therein to the impurity such as column IV element silicon and can increase the concentration of electronics in N-shaped gallium nitride.Introduce enough at N-shaped gallium nitride surface
The acceptor impurity of concentration, or gallium nitride p-n junction can be obtained at the p-type gallium nitride surface sufficient concentrations of donor impurity of introducing,
It is the basis of many gallium nitride devices.Being mixed by ferrum in gallium nitride, its deep acceptor energy level is positioned near the central authorities of gallium nitride forbidden band,
Due to the ferrum deep acceptor compensating action to shallow donor, the semi-insulating gallium nitride that available resistivity is the highest.Semi-insulating gallium nitride is
At a high speed, high-frequency element and circuit, the important backing material of integrated optoelectronic circuit.
Ion implanting and High temperature diffusion are the main method of semiconductor doping.Until 20th century the seventies, impurity is mixed
Miscellaneous completing mainly by High temperature diffusion, in this doping method, the distribution of impurity is mainly determined with diffusion time by diffusion temperature
Fixed.In ion implantation technology, dopant ion is injected in quasiconductor with the form of ion beam, and Impurity Distribution is mainly by Implantation Energy
Determine with ionic species.For the High temperature diffusion doping process of gallium nitride, need to use certain measures to prevent the steaming of nitrogen
Sending out, otherwise nitrogen and gallium ratio of number can substantial deviation 1:1.On the other hand, can cause in gallium nitride in a large number due to ion implanting
Lattice defect, eliminating these defects needs to make annealing treatment gallium nitride, as spreading with afore-said hot, the height of annealing process
Temperature can make nitrogen evaporate, must after gallium nitride surface adds up-protective layer re-annealing.Growth protecting layer adds the cost of doping.To nitrogen
By adding during GaN growth, the doping changing gallium can also treat that doped chemical presoma realizes, but this method meeting
In gallium nitride, introduce other unwanted impurity simultaneously, and the presoma of required doped chemical often price is high.
Therefore, for gallium nitride, the room temperature doping process finding a kind of low cost is significant.
Summary of the invention
It is an object of the invention to provide a kind of low cost, without corrasion, be simultaneously suitable for material and device in room
The method mixing impurity under temperature in gallium nitride.
Technical scheme is as follows:
The method that in the present invention, room temperature introduces impurity in gallium nitride: by gallium nitride material or device and solid impurity source all
Be placed in and utilize in the plasma that radio frequency produces in noble gas, make atom and/or the ion entrance etc. in solid impurity source from
Daughter, foreign atom and/or ion obtain kinetic energy, hence into gallium nitride material with cation in plasma and electron collision
In material or device.Plasma inspires a large amount of electronics and hole, these electronics and limit, hole in gallium nitride material or device
Generation limit is combined.It is likely under the excitation of electronics and hole-recombination process, has greatly accelerated the impurity entering into gallium nitride
Diffusion at room temperature.
Concrete, the method for the present invention is carried out in the cavity of the plasma generator not being biased.Due to gallium nitride
Valence link very strong, ratio silicon and GaAs are all strong many, the plasma not being biased to gallium nitride surface almost without damage.Cause
This, is in order to carry out high efficiency doping in gallium nitride, should be by gallium nitride material to be adulterated (or the gallium nitride device being partially completed
Part) and solid impurity source be all placed on the high position of plasma generator cavity plasma density (preferably close to the highest
Position).Under solid impurity source and gallium nitride material (or device) discontiguous premise to be adulterated, the distance between them
More better.Using noble gas as plasma working gas, carry out under 5～5000W power Cement Composite Treated by Plasma 0.5～
120min。
The present invention treating, doped gallium nitride can be gallium nitride film or wafer, it is also possible to be the gallium nitride being partially completed
Device.When placing gallium nitride film or wafer or the gallium nitride device being partially completed so that it is the side to be adulterated is towards solid
State impurity source is preferable.
The method of the present invention may utilize various plasma generator.If application inductively coupled plasma
(Inductively Coupled Plasma is called for short ICP) generator is carried out, then should close its biasing radio frequency, to avoid quarter
Erosion and ion implanting effect.When the method proposed by the present invention is doped, plasma is to gallium nitride material or the table of device
Face is almost without corrasion.
Described solid impurity source, such as silicon chip, magnesium granules, zinc ingot metal etc., can be metal material, it is also possible to be nonmetal
Material.The method of the present invention can by metallic elements such as Mg, Cu, Mo, Al, Ca, Fe, Cr, Sb under room temperature environment, and Si,
The nonmetalloids such as As, Br, Se introduce in gallium nitride material.Experiment shows, this doping method introduces the quantity of impurity with etc.
The density (depending on encouraging the power of radio frequency and position in chamber) of gas ions is relevant with the time of process.The degree of depth that impurity enters then takes
Certainly in the factor such as character, the power of plasma excitation radio frequency and process time of foreign atom itself.
In said method, as the noble gas of working gas conventional have helium, argon, when carrying out Cement Composite Treated by Plasma
The flow 1～100sccm of working gas, preferably 10～40sccm.
The power of said method Cement Composite Treated by Plasma is preferably 200～2000W, more preferably 300～1000W；During process
Between be preferably 5～50min.
In the methods of the invention, in order to avoid the atom of unwanted cavity material is also mixed in gallium nitride material to be mixed
Go, the plasma generator cavity used is put into two panels large-sized high purity silicon nitride gallium sheet, and by solid impurity source
And treat that doped gallium nitride material or device are placed between this two large stretch of high purity silicon nitride gallium sheet.This two large stretch of high purity silicon nitride gallium sheet will not
Obstruction plasma works, but cavity atom entrance can be greatly lowered and treat in doped gallium nitride material or device.
Under room temperature environment, the possible principle of plasma doping is as follows:
As a example by carrier gas is as helium, in plasma treatment procedure, electronics is accelerated by the electromagnetic field in excitation radio frequency, electricity
Son and He atomic collision in carrier gas, become He by its ionization+Ion, it and electronics constitute plasma.Electronics in the plasma
Temperature is the highest, up to 2000-10000K.On the one hand, the cation of plasma high speed motion and electron bombardment impurity source surface,
Make impurity source top layer atom or ion enter in plasma atmosphere, and obtain rapidly kinetic energy by collision.On the other hand, at a high speed
The cation of motion and electronic impact gallium nitride material surface, produce vacancy-like defects and electron hole pair on its surface.Wait
In gas ions processing procedure, these vacancy-like defects can constantly discharge room (V).Experiment shows, at room temperature, room (V) exists
Spreading in gallium nitride, electronics and hole limit diffusion limit in gallium nitride is combined.Writing for convenience, here, foreign atom M is in
Gallium nitride Ga atom position or atom N position, be designated as MS.Foreign atom is designated as M when being in gapI。
It is respectively described M belowIAnd MSLocomotory mechanism in gallium nitride:
MIMotion in gallium nitride, can explain by Bourgoin mechanism.Under room temperature, gallium nitride is sphalerite
, in lattice, there is different types of gap in structure, such as, along c-axis channel gap, be parallel between the arrayaof atoms of c-axis
Gap and split-interstitial gap etc..It is in the M in certain gapIFree energy with its institute electrically charged relevant.If MI
In gallium nitride forbidden band, there is donor level, work as MIIonized by Electrons enter conduction band time positively charged, be denoted as MI +, when conduction band electron returns to
During donor level, MINot charged, it is denoted as MI 0.Other MIHave acceptor level in gallium nitride forbidden band, then it is with or without the hole time-division
Do not have 0 or-1 unit charge, be denoted as M respectivelyI 0And MI -.Below with MIIn case of having donor level in forbidden band, enter
Row is discussed.Let a and b be two gap digits adjacent in GaN.Fig. 1 provides the M that charge state is+1 and 0I +And MI 0It is between A or B
The free energy of gap position.If initially MIWith M in gallium nitrideI +Presented in the minimum B gap of free energy, front have been pointed out, etc.
Gas ions processes and produces many electronics and hole at gallium nitride surface.Work as MI +During one conduction band electron of capture, become MI 0.Such as Fig. 1
Shown in, MI 0The free energy being had at B gap is high, unstable, and the A gap closed on is MI 0The position that free energy is minimum, therefore
It is in the M in B gapI 0The A gap closed on must be moved to；Hereafter, M is worked asI 0During one valence band hole of capture, MI 0Become MI +。MI +The free energy being had in A gap is high, unstable, must move to the B gap closed on.Said process does not continue and continues
Just explain MIRoom temperature diffusion in GaN lattice.In like manner, if MIAn acceptor level is had in GaN forbidden band, available similar
Method explanation MIRoom temperature diffusion in GaN lattice.Owing to the direction of diffusion is to be pointed to, by the region that concentration is high, the district that concentration is low
Territory, therefore MIBy surface to internal motion.
MSMotion in gallium nitride.When room moves to MSDuring side, MSJust can jump into room, and by follow-up
Room is to internal motion.Under room temperature in complete gallium nitride crystal lattice, MIDiffusion coefficient more than MSDiffusion coefficient, this be because of
To exist premised on room by neighbour for being in the diffusion of foreign atom or the ion subrogated, and MIDiffusion need not before this
Carry.The vacancy-like defects that the inventive method introduces on surface constantly discharges V, and under room temperature, V can in gallium nitride crystal lattice quickly
Diffusion.When V moves to MSDuring side, MSCan enter the V of neighbour, i.e. move to another lattice point from a lattice point, it spreads system
Number is than the M in perfect latticeSDiffusion coefficient be greatly increased.
Being not excluded for there may be other mechanism, further study mechanism is the most underway.
The present invention utilizes plasma to be doped gallium nitride material under room temperature environment, dopant species include metal and
Nonmetal.Owing to this method realizes under room temperature environment, with traditional High temperature diffusion and ion implantation technology or the most conventional
Gallium nitride doping process is compared, the most convenient but also economical, and doped chemical is single.It will be further appreciated that sample in this doping method
Product surface dopant concentration is higher, can realize the doping of an ultra shallow degree of depth, and can introduce plurality of impurities simultaneously.
Accompanying drawing explanation
Fig. 1. before and after embodiment 1 Cement Composite Treated by Plasma in gallium nitride film Mo impurity concentration with the scattergram of change in depth,
Where the dotted line signifies that gallium nitride film after 750W Cement Composite Treated by Plasma 2 minutes Mo impurity concentration with the distribution of the degree of depth, solid line table
Show that in the most plasma-treated gallium nitride film, Mo impurity concentration is with the distribution of the degree of depth.
Fig. 2. before and after embodiment 2 Cement Composite Treated by Plasma in gallium nitride film As impurity concentration with the scattergram of change in depth,
Dotted line represents gallium nitride film in embodiment 2, and after 750W Cement Composite Treated by Plasma 2 minutes, As impurity concentration is with the distribution of the degree of depth, real
Line represents that in the most plasma-treated gallium nitride film, As impurity concentration is with the distribution of the degree of depth.
Detailed description of the invention
Below in conjunction with two embodiments, the invention will be further described, but limits the model of the present invention never in any form
Enclose.
Embodiment 1:
Select the gallium nitride film of Grown on Sapphire Substrates, thickness 3.5 μm.First by gallium nitride film acetone, second
Alcohol, deionized water carry out ultrasonic cleaning 10min respectively.Then a piece of Mo sheet (4cm × 3.6cm × 0.25mm) is placed in plasma
Precursor reactant room bottom center, gallium nitride is placed in Mo sheet side.Working gas is helium, flow 22sccm, and vacuum 5E-3Pa is left
Right.The power of excitation power supply is 750W, processes time 2min.SIMS means are finally utilized to obtain plasma treated sample
In product, Mo impurity concentration is with the distribution of the degree of depth, and result is as shown in Figure 1.After 750W Cement Composite Treated by Plasma, Mo surface concentration is the highest
About 4E20atoms/cm3, Mo can move to about 10nm in gallium nitride farthest, thus verify that plasma physical ability is at room temperature environment
Lower Mo is introduced in gallium nitride.
Embodiment 2:
Select the gallium nitride film of Grown on Sapphire Substrates, thickness 3.5 μm.First by gallium nitride film acetone, second
Alcohol, deionized water carry out ultrasonic cleaning 10min respectively.Then three gallium arsenide films (0.7cm × 0.8cm × 0.5mm) are placed in
Plasma-reaction-chamber bottom center, gallium nitride is placed in gallium arsenide film side.Working gas is helium, flow 22sccm, vacuum
Degree about 5E-3Pa.The power of excitation power supply is 750W, processes time 2min.SIMS means are finally utilized to obtain through plasma
In sample after process, As impurity concentration is with the distribution of the degree of depth, and result is as shown in Figure 2.After 750W Cement Composite Treated by Plasma, As exists
Near surface a peak, peak value about 3.4E20atoms/cm are distributed3, it is left that As can move to 40nm in gallium nitride farthest
The right side, thus verify that As is introduced in gallium nitride under room temperature environment by plasma physical ability.
Claims (10)
1. the method at room temperature introducing impurity in gallium nitride, by miscellaneous to gallium nitride material to be adulterated or device and solid-state
Matter source is all placed in utilizing in the plasma that radio frequency produces in noble gas, makes the atom in solid impurity source and/or ion enter
Enter plasma, foreign atom and/or ion and obtain kinetic energy, hence into nitrogen with cation in plasma and electron collision
Change in gallium material or device.
2. the method for claim 1, it is characterised in that described method is in the chamber of the plasma generator not being biased
Body is carried out, gallium nitride material to be adulterated or device and solid impurity source are all placed on plasma generator cavity medium from
The position that daughter density is high, using noble gas as working gas, carry out under 5～5000W power Cement Composite Treated by Plasma 0.5～
120min。
3. method as claimed in claim 1 or 2, it is characterised in that described gallium nitride material is gallium nitride film or wafer.
4. method as claimed in claim 1 or 2, it is characterised in that when carrying out Cement Composite Treated by Plasma, described gallium nitride material
Or the device side to be adulterated is towards solid impurity source.
5. method as claimed in claim 1 or 2, it is characterised in that described solid impurity source is metal material or non-metallic material
Material.
6. method as claimed in claim 1 or 2, it is characterised in that the solid impurity introduced in gallium nitride material is selected from down
One or more in row metallic element: Mg, Cu, Mo, Al, Ca, Fe, Cr and Sb；And/or, in following nonmetalloid
One or more: Si, As, Br and Se.
7. method as claimed in claim 2, it is characterised in that described noble gas is helium and/or argon, carries out plasma
When body processes, the flow of noble gas is 1～100sccm.
8. method as claimed in claim 2, it is characterised in that the power of plasma treatment is 200～2000W, the time be 5～
50min。
9. method as claimed in claim 2, it is characterised in that described plasma generator is that inductively coupled plasma is sent out
Raw device, cuts out its biasing radio frequency during use.
10. method as claimed in claim 2, it is characterised in that put into two panels high purity silicon nitride in plasma generator cavity
Gallium sheet blocks the cavity wall of plasma generator.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198747A (en) * | 2018-01-09 | 2018-06-22 | 湖南理工学院 | A kind of method that secondary epitaxy growth prepares gallium nitride material |
| CN114744286A (en) * | 2022-03-30 | 2022-07-12 | 广东马车动力科技有限公司 | Ion-doped solid electrolyte membrane and preparation method and application thereof |
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| CN102800572A (en) * | 2012-09-06 | 2012-11-28 | 电子科技大学 | Method for preparing magnesium-doped semiconductor film and semiconductor film thereof |
| CN104241464A (en) * | 2014-09-05 | 2014-12-24 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method increasing P-type gallium nitride doping concentration |
| CN105931951A (en) * | 2016-06-13 | 2016-09-07 | 北京大学 | Method for introducing impurities into gallium arsenide material in room-temperature environment |
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2016
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6544867B1 (en) * | 1999-06-11 | 2003-04-08 | National Research Council Of Canada | Molecular beam epitaxy (MBE) growth of semi-insulating C-doped GaN |
| CN102800572A (en) * | 2012-09-06 | 2012-11-28 | 电子科技大学 | Method for preparing magnesium-doped semiconductor film and semiconductor film thereof |
| CN104241464A (en) * | 2014-09-05 | 2014-12-24 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method increasing P-type gallium nitride doping concentration |
| CN105931951A (en) * | 2016-06-13 | 2016-09-07 | 北京大学 | Method for introducing impurities into gallium arsenide material in room-temperature environment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108198747A (en) * | 2018-01-09 | 2018-06-22 | 湖南理工学院 | A kind of method that secondary epitaxy growth prepares gallium nitride material |
| CN114744286A (en) * | 2022-03-30 | 2022-07-12 | 广东马车动力科技有限公司 | Ion-doped solid electrolyte membrane and preparation method and application thereof |
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