CN106298992B - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN106298992B CN106298992B CN201610846614.0A CN201610846614A CN106298992B CN 106298992 B CN106298992 B CN 106298992B CN 201610846614 A CN201610846614 A CN 201610846614A CN 106298992 B CN106298992 B CN 106298992B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000002096 quantum dot Substances 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims description 79
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 44
- 230000004888 barrier function Effects 0.000 claims description 33
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical group [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 12
- 230000012010 growth Effects 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 65
- UAJUXJSXCLUTNU-UHFFFAOYSA-N pranlukast Chemical class C=1C=C(OCCCCC=2C=CC=CC=2)C=CC=1C(=O)NC(C=1)=CC=C(C(C=2)=O)C=1OC=2C=1N=NNN=1 UAJUXJSXCLUTNU-UHFFFAOYSA-N 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 25
- 229910000673 Indium arsenide Inorganic materials 0.000 description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 8
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000005428 wave function Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
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- 230000000694 effects Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- -1 aluminium indium phosphorus Chemical compound 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
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- 230000007704 transition Effects 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
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- 230000007773 growth pattern Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar cell which comprises a lower electrode, a lower contact layer, a back field layer, an active region layer, a window layer, an upper contact layer and an upper electrode, wherein the lower contact layer, the back field layer, the active region layer, the window layer, the upper contact layer and the upper electrode are sequentially arranged on the upper surface of the lower electrode layer from bottom to top, the active region layer comprises a plurality of layers of II-type quantum well/I-type quantum dot laminated structure layers, and the I-type quantum dot layer is arranged on the II-type quantum well layer. The invention also provides a preparation method of the solar cell. The invention effectively improves the conversion efficiency of the solar cell.
Description
Technical field
The invention belongs to technical field of solar cells, more particularly to a kind of solar cell and preparation method thereof.
Background technology
All the time, the main bottleneck of restriction solar cell technology development be relatively low photoelectric transformation efficiency and it is too high into
This, efficient solar cell is always the focus of the area research.Compared to traditional solar cell, middle charged pool can be realized
Wide spectrum to sunshine absorbs, and with up to 63.1% theoretical limit efficiency, application prospect is extensive.The work of middle charged pool
It is as principle：Intermediate band is introduced in the forbidden band of semiconductor, can also be by double except normal absorption is higher than the photon of band-gap energy
The capture of photon excitation process has widened the utilization scope of solar spectral less than the photon of band-gap energy, improves opto-electronic conversion effect
Rate.At present, prepare Intermediate Gray solar cell and mainly use indium arsenide/GaAs (InAs/GaAs) quantum dot, InAs is quantum
Point point layer material, GaAs is quantum dot barrier material layer.InAs/GaAs quantum dots are I class band structures, and InAs forbidden band falls completely
In GaAs forbidden band, electronics and the bound level in hole are formd in InAs quantum dots.Wherein, electron energy level is located at GaAs
In forbidden band, the Intermediate Gray of battery is used as；Hole energy level is approached with GaAs valence band, collectively as valence band.Pass through two-photon excitation mistake
Electrons in journey, valence band first transit to Intermediate Gray and then to conduction band, photo-generate electron-hole pair are formed, in the effect of built in field
Lower output battery formation photogenerated current.However, because electronics and hole are all strapped in InAs quantum dot layers, it is mutual between them
Effect makes the electrons for being energized into conduction band by the way that relaxation returns Intermediate Gray (time constant is picosecond magnitude) quickly with interior auger recombination,
So that the quasi-Fermi level of conduction band and Intermediate Gray is difficult to separate, and open-circuit voltage reduction, efficiency has no compared with traditional solar cell
Improve.Theoretical research shows, if the wave function separation in electronics and hole, the interaction between them can weaken, then can be with
Suppress, with interior auger recombination, to improve battery efficiency.In the quantum dot of II class band structures, a kind of conduction band of material is located in addition
In a kind of forbidden band of material, and top of valence band is less than the top of valence band of another material, interlocking for band can distinguish electronics and hole
It is bound by two kinds of materials, wave function separation can be achieved to the suppression with interior auger recombination.But electronics and hole wave functions point
From transition probability of the electronics from valence band to Intermediate Gray can be reduced again, absorption of the battery to energy photons is reduced, can not equally be obtained
Obtain desired high conversion efficiency.
The content of the invention
Goal of the invention：In order to overcome problems of the prior art, the invention provides a kind of with high-conversion rate
Solar cell.
Technical scheme：The invention provides a kind of solar cell, including bottom electrode, bottom electrode is set in turn in from the bottom to top
The lower contact layer of layer upper surface, back surface field layer, active region layer, Window layer, upper contact layer, and Top electrode, wherein, the active region layer
Including multilayer II classes SQW/I class quantum dot laminated structural layers, the I classes quantum dot layer is arranged on II class quantum well layers.
Further, the II classes SQW/I class quantum dots laminated structural layers include barrier layer, II class amounts under II class SQWs
Barrier layer and I classes quantum dot point layer under sub- trap well layer, I class quantum dots, wherein, II class SQW well layer is arranged under II class SQWs
Barrier layer is arranged on the upper surface of II class SQW well layer under the upper surface of barrier layer, I class quantum dots, and I classes quantum dot point layer is arranged on I
The upper surface of barrier layer under class quantum.
Further, the number of plies of the II classes SQW/I class quantum dot laminated structural layers is between 30~200.So can
Enough sunshines are absorbed, while ensure that the quality of device.
Further, the II classes SQW is GaAsSb/GaAs (gallium arsenic antimony/GaAs) SQW.
Further, the I classes quantum dot is InAs/GaAs (indium arsenide/GaAs) quantum dot.
Further, the active area is PN junction structure, and active area, which includes integral material active region layer, the second body material, to be had
Source region layer and multilayer II classes SQW/I class quantum dot laminated structural layers, the multilayer II classes SQW/I class quantum dot lamination knots
Structure layer is arranged between integral material active region layer and the second body material active region layer.
Further, the active area is PN junction structure, and active area includes two layers integral material active region layers, the second body materials
Expect active region layer and multilayer II classes SQW/I class quantum dot laminated structural layers, sequentially consist of integral material active area
Layer, multilayer II classes SQW/I class quantum dots laminated structural layers, integral material active region layer and the second body material active region layer.
Further, the active area is PN junction structure, and active area includes integral material active region layer, two layers of second body materials
Expect active region layer and multilayer II classes SQW/I class quantum dot laminated structural layers, sequentially consist of integral material active area
Layer, the second body material active region layer, multilayer II classes SQW/I class quantum dot laminated structural layers and the second body material active region layer.
Present invention also offers a kind of method for preparing above-mentioned solar cell, comprise the following steps：
Step 1：Lower contact layer is provided；
Step 2：The method growth deposited in lower contact layer surface using molecular beam epitaxy or metalorganic chemical vapor
Back surface field layer；
Step 3：Active region layer is grown in back surface field layer upper surface, including integral material active region layer, the second body material have
Source region layer and multilayer II classes SQW/I class quantum dot laminated structural layers；
Step 4：On active region layer successively growth window layer and upper contact layer；
Step 5：Top electrode and bottom electrode are prepared respectively on upper contact layer and lower contact layer.
Further, the growing method of the multilayer II classes SQW/I class quantum dot laminated structural layers is：First grow II classes
Barrier layer under SQW, II class SQW well layer is grown in barrier layer under barrier layer upper surface under II class SQWs, I class quantum and is grown in II
Class SQW well layer upper surface, I classes quantum dot point layer is grown in barrier layer upper surface under I class quantum, is grown successively according to periodicity
Into multilayer II classes SQW/I class quantum dot laminated structural layers.
Operation principle：The present invention uses I class quantum dot-II class SQW hybrid structures in solar cell, using I class amounts
Son point absorbs the photon for being higher than quantum dot ground states energy less than barrier material layer band-gap energy, produces photo-generated carrier, electronics is in beam
State energy level i.e. Intermediate Gray is tied up, hole is in valence band.Because gallium arsenic antimony (GaAsSb) quantum well valence energy is less than indium arsenide (InAs)
Quantum dot Valence-band, hole is entered in II class SQWs, and the electronics on Intermediate Gray then absorbs energy photons transition again
To conduction band.The electron-hole pair produced by two-photon excitation process exports battery formation photoproduction in the presence of built in field
Electric current.Local is not into II class SQWs to photohole in I class quantum dots in the solar cell that the present invention is provided, electricity
Son and hole interaction weaken, and suppress, with interior auger recombination, to improve open-circuit voltage, effectively increase conversion efficiency.
Beneficial effect：Compared with prior art, the present invention effectively increases the conversion efficiency of solar cell；While preparation side
Method is simple and convenient, and the conversion ratio for the solar cell prepared is high.
Brief description of the drawings
The schematic arrangement figure for the solar cell that Fig. 1 provides for the present invention；
Fig. 2 is the structural representation of active region layer in embodiment 1；
Fig. 3 is the structural representation of active region layer in embodiment 2；
Fig. 4 is the structural representation of active region layer in embodiment 3；
Fig. 5 is the structural representation of the individual layer II classes SQW/I class quantum dot laminated structural layers used in the present invention；
Fig. 6 is the structural representation for the solar cell prepared using the preparation method of the invention provided.
Embodiment
The present invention is done below in conjunction with the accompanying drawings and further explained.
Embodiment 1：
As shown in figure 1, the solar cell that provides of the present invention, including bottom electrode 1, lower electrode layer is set in turn in from the bottom to top
The lower contact layer 2 of 1 upper surface, back surface field layer 3, active region layer 4, Window layer 5, upper contact layer 6, upper electrode layer 7.As shown in Fig. 2 its
In, active region layer 4 includes integral material active layer 41, and the upper surface of integral material active layer 41 is set in turn in from bottom to up
Multilayer II classes SQW/I class quantum dots laminated structural layers 42 and the second body material active layer 43.Multilayer II classes SQW/I classes
Quantum dot laminated structural layers 42 are arranged between the body material active layer 43 of integral material active layer 41 and second.Wherein, connect under
Contact layer 2 is p-type GaAs (hereinafter referred P-GaAs) contact layer, and back surface field layer 3 is p-type aluminium indium phosphorus (hereinafter referred P-AlInP) or P
Type aluminum gallium arsenide (hereinafter referred P-AlGaAs) or p-type gallium indium phosphorus (hereinafter referred P-GaInP) back surface field layer, Window layer 5 are N-type aluminium indium
Phosphorus (hereinafter referred N-AlInP) or N-type aluminum gallium arsenide (hereinafter referred N-AlGaAs) or N-type gallium indium phosphorus (hereinafter referred N-GaInP)
Window layer, upper contact layer 6 is contact layer on N-type GaAs (hereinafter referred N-GaAs)；Integral material active layer 41 is P-
GaAs layers；Second body material active layer 43 is N-GaAs layers；I classes quantum dot is InAs/GaAs quantum dots, unintentional doping；II
Class SQW is GaAsSb/GaAs SQWs, unintentional doping.
Embodiment 2：
As shown in figure 1, the solar cell that provides of the present invention, including bottom electrode 1, lower electrode layer is set in turn in from the bottom to top
The lower contact layer 2 of 1 upper surface, back surface field layer 3, active region layer 4, Window layer 5, upper contact layer 6, upper electrode layer 7.As shown in figure 3, its
In, active region layer 4 includes integral material active layer 41, and the upper surface of integral material active layer 41 is set in turn in from bottom to up
Multilayer II classes SQW/I class quantum dots laminated structural layers 42, the body material active layer of integral material active layer 41 and second
43.So multilayer II classes SQW/I class quantum dots laminated structural layers 42 are arranged between two layers of integral material active layers 41.
Wherein, lower contact layer 2 is N-GaAs contact layers, and back surface field layer 3 is N-AlInP or N-AlGaAs or N-GaInP back surface field layers, Window layer
5 be P-AlInP or P-AlGaAs or P-GaInP Window layers, and upper contact layer 6 is contact layer on P-GaAs；Integral material is active
Layer 41 is N-GaAs layers；Second body material active layer 43 is P-GaAs layers；I classes quantum dot is InAs/GaAs quantum dots, and N-type is mixed
It is miscellaneous；II classes SQW is GaAsSb/GaAs SQWs, n-type doping.
Embodiment 3：
As shown in figure 1, the solar cell that provides of the present invention, including bottom electrode 1, lower electrode layer is set in turn in from the bottom to top
The lower contact layer 2 of 1 upper surface, back surface field layer 3, active region layer 4, Window layer 5, upper contact layer 6, upper electrode layer 7.As shown in figure 4, its
In, active region layer 4 includes integral material active layer 41, and the upper surface of integral material active layer 41 is set in turn in from bottom to up
The second body material active layer 43, multilayer II classes SQW/I class quantum dots laminated structural layers 42 and the second body material active layer
43.So multilayer II classes SQW/I class quantum dots laminated structural layers 42 are arranged between two layers of second body material active layers 43.
Wherein, lower contact layer 2 is contact layer under P-GaAs, and back surface field layer 3 is P-AlInP or P-AlGaAs or P-GaInP back surface field layers, window
Layer 5 is N-AlInP or N-AlGaAs or N-GaInP Window layers, and upper contact layer 6 is contact layer on N-GaAs；Integral material has
Active layer 41 is P-GaAs layers；Second body material active layer 43 is N-GaAs layers；I classes quantum dot is n-type doping InAs/GaAs quantum
Point；II classes SQW is n-type doping GaAsSb/GaAs SQWs.
Wherein, as shown in figure 5, being wrapped in individual layer II classes SQW/I class quantum dot laminated structural layers in embodiment 1~3
Barrier layer 423 and I classes quantum dot point layer 424 under barrier layer 421 under II class SQWs, II class SQWs well layer 422, I class quantum dots are included,
Wherein, II classes SQW well layer 422 is arranged on barrier layer 423 under the upper surface of barrier layer 421 under class SQW, I class quantum dots and set
In the upper surface of II class SQWs well layer 422, I classes quantum dot point layer 424 is arranged on the upper surface of barrier layer 423 under I class quantum dots,
Then multilayer II classes SQW/I class quantum dots laminated structural layers 42 are sequentially generated according to periodicity.II classes SQW/I class quantum
The number of plies that point laminated structural layers are used is more, and the absorption to energy photons is more obvious, but excessive SQW/quantum dot
Lamination can introduce big stress, device quality be influenceed, so the number of plies of II classes SQW/I class quantum dot laminated structural layers is 30
Layer~200 layers between.Wherein, I classes quantum dot is InAs/GaAs quantum dots, and the material of barrier layer 423 is GaAs, I under I class quantum dots
The thickness of barrier layer 423 is 5-15nm under class quantum dot, during I classes quantum dot point 424 material of layer are InAs, I classes quantum dot point layer 424
Quantum dot surface density is more than 1 × 1010cm-2.Barrier layer 421 under II classes SQW point GaAsSb/GaAs SQWs, II class SQWs
Material be GaAs, the thickness of barrier layer 421 is 30-100nm under II class SQWs, and the material of II class SQWs well layer 422 is
Thickness 1-10nm, the Sb component of GaAsSb, II class SQW well layer 422 are more than 14% and are less than 30%.
The preparation method for the solar cell that the present invention is provided, comprises the following steps：
Step 1：Contact layer 2 under one GaAs is provided；Contact layer 2 can be p-type or N-type under wherein GaAs.
Step 2：The method that the surface of contact layer 2 is deposited using molecular beam epitaxy or metalorganic chemical vapor under GaA
Back surface field layer 3, integral material active region layer 41 are grown successively.Wherein, if lower contact layer 2 is p-type, back surface field layer material is P-
AlInP, P-AlGaAs, P-GaInP are any, and the material of integral material active region layer 41 is P-GaAs；If lower contact layer 2 is
Back surface field layer material is that N-AlInP, N-AlGaAs, N-GaInP are any in N-type, step 2, the material of integral material active region layer 41
Expect for N-GaAs.
Step 3：In the superficial growth multilayer II classes SQW of integral material active region layer 41/I class quantum dot laminated construction
42。
Barrier layer 421 under II class SQWs is first grown, II class SQWs well layer 422 is grown in barrier layer 421 under II class SQWs
Barrier layer 423 is grown in the upper surface of II class SQWs well layer 422 under upper surface, I class quantum, and I classes quantum dot point layer 424 is grown in I
The upper surface of barrier layer 423 under class quantum, multilayer II classes SQW/I class quantum dot laminated structural layers are grown into according to periodicity successively.
I classes quantum dot is InAs/GaAs quantum dots, using stratiform plus island growth pattern, is organized themselves into a little.Growth is using outside molecular beam
Prolong or metalorganic chemical vapor deposition method.InAs depositions 1.5-3ML, each quantum dot lateral dimension 30-80nm,
Longitudinal size 6-15nm.II classes SQW is GaAsSb/GaAs SQWs.Growth uses molecular beam epitaxy or metallorganic
The method for learning gas deposition.Barrier layer thickness is 30-100nm under SQW, and well layer thickness is 1-10nm, and it is small that Sb components are more than 14%
In 30%.
Step 4：The growth regulation disome material active area successively on multilayer II classes SQW/I class quantum dots laminated construction 42
Layer 43, Window layer 5, upper contact layer 6.If lower contact layer 2 is p-type, the material of the second body material active region layer 43 is N-GaAs, window
Mouth layer material is N-GaAs.If lower contact layer 2 is N-type, the material of second body material active region layer 43 is P-GaAs in step 4,
Window layer material is P-GaAs.
Step 5：Prepare Top electrode and bottom electrode：
In the upper surface of upper contact layer 6 deposition Top electrode 7, bottom electrode 1 is deposited in the lower lower surface of contact layer 2.N-type electrode
Using alloy AuGe/Ni/Au, P-type electrode uses alloy Ti/Pt/Au or Pb/Zn/Pb/Au, and then annealing makes AuGe/Ni/Au
Alloy and N-type GaAs contact layers, Ti/Pt/Au or Pb/Zn/Pb/Au and P-GaAs contact layers formation Ohmic contact, annealing temperature
Scope is 400 DEG C to 550 DEG C, and annealing time scope is 1 minute to 5 minutes.After Top electrode 7, bottom electrode 1 complete, with
Top electrode 7 is as the upper contact layer 6 beyond the region of mask corrosion Top electrode 7, and corrosive liquid is molten for the mixing of ammoniacal liquor, hydrogen peroxide and water
Liquid, etching time scope is 1 minute to 3 minutes.The solar cell being made is as shown in Figure 6.
The present invention separates electron-hole wave functions, using II class band structures, with interior Russia by adding people's II class SQWs
Compound time of having a rest can improve three orders of magnitude, increase to nanosecond (ns) magnitude, be beneficial to the separation of conduction band Intermediate Gray, maintain open circuit
Voltage does not decline, and effectively increases battery efficiency.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements done etc. should be included within the scope of protection of the invention.
Claims (8)
1. a kind of solar cell, it is characterised in that：Including bottom electrode, from the bottom to top it is set in turn under lower electrode layer upper surface
Contact layer, back surface field layer, active region layer, Window layer, upper contact layer, and Top electrode, wherein, the active region layer includes multilayerClass
SQW/Class quantum dot laminated structural layers, it is describedClass quantum dot layer is arranged onOn class quantum well layer；Wherein, it is describedClass quantum
Trap is GaAsSb/GaAs SQWs；It is describedClass quantum dot is InAs/GaAs quantum dots.
2. solar cell according to claim 1, it is characterised in that：It is describedClass SQW/Class quantum dot laminated structural layers
Including barrier layer under class SQW,Class SQW well layer,Under class quantum dot barrier layer andClass quantum dot point layer, wherein,Class SQW
Well layer is arranged onThe upper surface of barrier layer under class SQW,Barrier layer is arranged under class quantum dotThe upper surface of class SQW well layer,
Class quantum dot point layer is arranged onThe upper surface of barrier layer under class quantum.
3. solar cell according to claim 1, it is characterised in that：It is describedClass SQW/Class quantum dot laminated structural layers
The number of plies between 30 ~ 200.
4. solar cell according to claim 1, it is characterised in that：The active area is PN junction structure, and active area includes
Integral material active region layer, the second body material active region layer and multilayerClass SQW/Class quantum dot laminated structural layers, it is described
MultilayerClass SQW/Class quantum dot laminated structural layers are arranged on integral material active region layer and the second body material active region layer
Between.
5. solar cell according to claim 1, it is characterised in that：The active area is PN junction structure, and active area includes
Two layers integral material active region layers, the second body material active region layer and multilayerClass SQW/Class quantum dot laminated structural layers,
Sequentially consist of integral material active region layer, multilayerClass SQW/Class quantum dot laminated structural layers, integral material
Active region layer and the second body material active region layer.
6. solar cell according to claim 1, it is characterised in that：The active area is PN junction structure, and active area includes
Integral material active region layer, two layers of second body material active region layers and multilayerClass SQW/Class quantum dot laminated structural layers,
Sequentially consist of integral material active region layer, the second body material active region layer, multilayerClass SQW/Class quantum dot is folded
Rotating fields layer and the second body material active region layer.
7. a kind of method of the solar cell prepared described in claim 1, it is characterised in that：Comprise the following steps：
Step 1：Lower contact layer is provided；
Step 2：The method deposited in lower contact layer surface using molecular beam epitaxy or metalorganic chemical vapor grows back surface field
Layer；
Step 3：Active region layer, including integral material active region layer, the second body material active area are grown in back surface field layer upper surface
Layer and multilayerClass SQW/Class quantum dot laminated structural layers；
Step 4：On active region layer successively growth window layer and upper contact layer；
Step 5：Top electrode and bottom electrode are prepared respectively on upper contact layer and lower contact layer；
Wherein, it is describedClass SQW is GaAsSb/GaAs SQWs；It is describedClass quantum dot is InAs/GaAs quantum dots.
8. the preparation method of the solar cell according to right wants 7, it is characterised in that：The multilayerClass SQW/Class quantum
Point laminated structural layers growing method be：Barrier layer under class SQW is first grown,Class SQW well layer is grown inUnder class SQW
Barrier layer upper surface,Barrier layer is grown under class quantumClass SQW well layer upper surface,Class quantum dot point layer is grown inUnder class quantum
Barrier layer upper surface, multilayer is grown into according to periodicity successivelyClass SQW/Class quantum dot laminated structural layers.
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