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CN106298620B - 一种承载基板及柔性显示器件的制备方法 - Google Patents

一种承载基板及柔性显示器件的制备方法 Download PDF

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CN106298620B
CN106298620B CN201610809635.5A CN201610809635A CN106298620B CN 106298620 B CN106298620 B CN 106298620B CN 201610809635 A CN201610809635 A CN 201610809635A CN 106298620 B CN106298620 B CN 106298620B
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CN106298620A (zh
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王志东
尹晓峰
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Beijing BOE Display Technology Co Ltd
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Abstract

本发明的实施例提供一种承载基板及柔性显示器件的制备方法,涉及显示技术领域,可使柔性衬底与承载基板均匀分离,且不会对柔性衬底和显示元件造成损伤。该承载基板包括层叠设置的第一子承载基板和第二子承载基板;所述第一子承载基板具有多个通孔,所述第二子承载基板具有多个凸起;所述凸起和所述通孔一一对应,所述凸起穿过所述通孔与所述第一子承载基板的表面齐平,且所述凸起与所述表面拼接在一起。用于柔性显示装置。

Description

一种承载基板及柔性显示器件的制备方法
技术领域
本发明涉及显示技术领域,尤其涉及一种承载基板及柔性显示器件的制备方法。
背景技术
柔性显示装置具有可以曲面显示、方便携带、轻薄、机械性能好等优点,被广泛地应用于卷绕型的移动终端产品。
由于柔性显示装置中的柔性衬底容易发生变形,在制备显示器件的过程中,定位、搬运、存储等均比较困难,因此通常先在玻璃基板等承载基板上形成柔性衬底,之后在其上形成显示元件,最后通过衬底剥离的方法,使柔性衬底与玻璃基板分开。
目前常用的两种衬底剥离方法是如图1(a)所示的机械方式和如图1(b)所示的激光方式,但是这两种剥离方法均存在一定问题。如:机械方式,剥离过程中容易对柔性衬底造成损伤;激光方式,在剥离的过程中,可能有部分激光穿过柔性衬底照射到显示元件上,从而对显示元件的性能造成影响(如阈值电压等),另外,激光能量分布不均,也容易造成对柔性衬底的损伤。
发明内容
本发明的实施例提供一种承载基板及柔性显示器件的制备方法,可使柔性衬底与承载基板均匀分离,且不会对柔性衬底和显示元件造成损伤。
为达到上述目的,本发明的实施例采用如下技术方案:
一方面,提供一种承载基板,包括层叠设置的第一子承载基板和第二子承载基板;所述第一子承载基板具有多个通孔,所述第二子承载基板具有多个凸起;所述凸起和所述通孔一一对应,所述凸起穿过所述通孔与所述第一子承载基板的表面齐平,且所述凸起与所述表面拼接在一起。
优选的,沿垂直所述第一子承载基板和所述第二子承载基板的拼接表面的方向,所述第二子承载基板的正投影面积大于所述第一子承载基板的正投影面积。
可选的,所述凸起的高度等于所述通孔的深度。
可选的,所述凸起的高度大于所述通孔的深度。
进一步优选的,所述承载基板还包括覆盖在所述第二子承载基板面向所述第一子承载基板一侧的间隔层,所述凸起穿过所述间隔层;所述凸起的高度等于所述通孔的深度与所述间隔层厚度之和。
进一步的,所述间隔层的材料为树脂材料。
优选的,所述通孔的形状为圆柱形;所述凸起的形状为圆柱形。
另一方面,提供一种柔性显示器件的制备方法,包括:在上述的承载基板的拼接表面形成粘结层;在所述粘结层上形成柔性衬底,并在所述柔性衬底上形成显示元件;将所述承载基板的所述第一子承载基板和第二子承载基板分离;采用清洗液,通过所述第一子承载基板上的通孔,使所述粘结层去除,以使所述第一子承载基板与所述柔性衬底分离,形成所述柔性显示器件;其中,所述清洗液不与所述第一子承载基板和所述柔性衬底发生反应。
优选的,将所述承载基板的所述第一子承载基板和第二子承载基板分离,包括:采用机械方式或者静电力方式,将所述承载基板的所述第一子承载基板和第二子承载基板分离;或者,在所述第二子承载基板的正投影面积大于所述第一子承载基板的正投影面积的情况下,从所述第二子承载基板的上方,向所述第二子承载基板的边缘施加惰性气体,通过气体压力,将所述承载基板的所述第一子承载基板和第二子承载基板分离。
优选的,所述粘结层的材料为有机硅聚合物材料。
优选的,所述显示元件为OLED显示元件;或者,所述显示元件为液晶显示元件。
本发明的实施例提供一种承载基板及柔性显示器件的制备方法,通过将承载基板设置为包括第一子承载基板和第二子承载基板的结构,可以在承载基板用于制作柔性显示器件时,先在第一子承载基板和第二子承载基板对合后的承载面上形成粘结层,之后在粘结层上形成柔性显示器件,这样在后续柔性衬底剥离时,可先将第二子承载基板与第一子承载基板分离,而由于位于柔性显示器件上的第一子承载基板具有通孔,可方便清洗液从通孔进入,而将粘结层材料清洗掉,从而实现第一子承载基板与柔性显示器件的分离。相对现有技术中的机械方式和激光方式,本发明可达到将柔性衬底与承载基板均匀分离的目的,且不会对显示元件造成损伤。其中,通过控制粘结层的材料,也不会对柔性衬底和第一子承载基板造成损伤。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1(a)为现有技术提供的一种柔性衬底剥离方式的示意图一;
图1(b)为现有技术提供的一种柔性衬底剥离方式的示意图二;
图2(a)为本发明实施例提供的一种承载基板中第一子承载基板和第二子承载基板分离时的侧视示意图一;
图2(b)为本发明实施例提供的一种承载基板中第一子承载基板和第二子承载基板对合后的侧视示意图一;
图3(a)为本发明实施例提供的一种承载基板的结构示意图一;
图3(b)为本发明实施例提供的一种承载基板的结构示意图二;
图4(a)为本发明实施例提供的一种承载基板中第一子承载基板和第二子承载基板分离时的侧视示意图二;
图4(b)为本发明实施例提供的一种承载基板中第一子承载基板和第二子承载基板对合后的侧视示意图二;
图5为本发明实施例提供的一种承载基板中第一子承载基板和第二子承载基板对合后的侧视示意图三;
图6为本发明实施例提供的一种承载基板中第一子承载基板和第二子承载基板对合后的侧视示意图四;
图7为本发明实施例提供的一种承载基板中第一子承载基板和第二子承载基板对合后的侧视示意图五;
图8为本发明实施例提供的一种制备柔性显示器件的流程示意图;
图9-图11为本发明实施例提供的一种制备柔性显示器件的过程示意图。
附图标记:
01-第一子承载基板;02-第二子承载基板;03-通孔;04-凸起;05-间隔层;10-粘结层;11-柔性衬底;12-显示元件。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明实施例提供一种承载基板,如图2(a)和2(b)所示,包括层叠设置的第一子承载基板01和第二子承载基板02,第一子承载基板01具有多个通孔03,第二子承载基板02具有多个凸起04,凸起04和通孔03一一对应,凸起04穿过通孔03与第一子承载基板01的表面齐平,且凸起04与表面拼接在一起。
需要说明的是,第一,不对第一子承载基板01和第二子承载基板02的材料进行限定,只要能在制备柔性显示器件过程中起承载作用即可。
第二,不对设置在第一子承载基板01上的通孔03的个数以及通孔03的排布方式进行限定,优选通孔03均匀排布。
对于设置在第二子承载基板02上的凸起04,与通孔03一一对应即可。
第三,当第一子承载基板01和第二子承载基板02对合时,凸起04穿过通孔03而与第一子承载基板01齐平的表面为承载面。即当所述承载基板用于制备柔性显示器件时,柔性衬底以及显示器件形成在所述承载基板的承载面上。
第四,不对通孔03和凸起04的形状进行限定,只要在第一子承载基板01和第二子承载基板02对合时,凸起04能穿过通孔03而与第一子承载基板01的表面齐平,且凸起04与所述表面拼接在一起即可。
示例的,如图3(a)所示,凸起04的形状可以为圆柱形,在此基础上,通孔03的形状也可以为圆柱形。如图3(b)所示,凸起04的形状可以为圆台形,在此基础上,通孔03的形状也可以为圆台形。当然,本发明实施例并不限定凸起04的形状一定要和通孔03的形状一样,可以不一样,此时,凸起04与通孔03可以仅在靠近拼接表面的部分贴合,也可以是凸起04与通孔03整个侧壁都贴合。
其中,凸起04与所述表面拼接在一起即为:凸起04穿过通孔03与第一子承载基板01的表面拼接形成一个平整无缝的承载面。
本发明实施例提供一种承载基板,通过将承载基板设置为包括第一子承载基板01和第二子承载基板02的结构,可以在承载基板用于制作柔性显示器件时,先在第一子承载基板01和第二子承载基板02对合后的承载面上形成粘结层,之后在粘结层上形成柔性显示器件,这样在后续柔性衬底剥离时,可先将第二子承载基板02与第一子承载基板01分离,而由于位于柔性显示器件上的第一子承载基板01具有通孔03,可方便清洗液从通孔03进入,而将粘结层材料清洗掉,从而实现第一子承载基板01与柔性显示器件的分离。相对现有技术中的机械方式和激光方式,本发明可达到将柔性衬底与承载基板均匀分离的目的,且不会对显示元件造成损伤。其中,通过控制粘结层的材料,也不会对柔性衬底和第一子承载基板01造成损伤。
优选的,第一子承载基板01为0.3~0.7mm;第二子承载基板02的除凸起04部分的厚度为0.3~0.7mm。
其中,第一子承载基板01和第二子承载基板02的除凸起04部分的厚度可以相同,也可不相同。
这样,对合后的第一子承载基板01和第二子承载基板02足以在柔性显示器件制作过程中起到支撑作用,而且也可避免厚度太厚而导致材料的浪费。
优选的,如图4(a)和4(b)所示,沿垂直第一子承载基板01与第二子承载基板02的拼接表面的方向,第二子承载基板02的正投影面积大于第一子承载基板01的正投影面积。即,第二子承载基板02的正投影完全覆盖第一子承载基板01的正投影。
进一步优选的,沿垂直所述拼接表面的方向,第二子承载基板02正投影的每条边的长度都大于对应的第一子承载基板01正投影的边长。
本发明实施例通过将第一子承载基板01做的小一些,而将第二子承载基板02做的大一些,更易于实现对合后的第一子承载基板01和第二子承载基板02的分离。
可选的,如图2(a)和2(b)所示,凸起04的高度等于通孔03的深度。
本发明实施例通过将凸起04的高度设置为等于通孔03的深度,在第一子承载基板01和第二子承载基板02对合时,易于控制第一子承载基板01或第二子承载基板02的移动,以保证对合后第二子承载基板02的凸起04穿过通孔03而与第一子承载基板01的表面齐平。
可选的,如图5和图6所示,凸起04的高度大于通孔03的深度。即,当第一子承载基板01和第二子承载基板02对合后,第一子承载基板01和第二子承载基板02之间具有间隙。
此处,考虑到第一子承载基板01和第二子承载基板02之间的间隙过高的话,在量产时会过多的浪费设备的空间,因此,优选第一子承载基板01和第二子承载基板02之间的间隙可不超过0.2mm。
需要说明的是,在凸起04的高度大于通孔03的深度的情况下,为了保证对合后第二子承载基板02的凸起04穿过通孔03而与第一子承载基板01的表面齐平,可通过外部调节装置来调节第二子承载基板02或第一子承载基板01的升降,以使第二子承载基板02的凸起04穿过通孔03而与第一子承载基板01的表面齐平。
本发明实施例通过在第一子承载基板01和第二子承载基板02对合后,使第一子承载基板01和第二子承载基板02之间具有间隙,可防止第一子承载基板01和第二子承载基板02黏在一起。
进一步优选的,如图7所示,所述承载基板还包括覆盖在第二子承载基板02面向第一子承载基板01一侧的间隔层05,凸起04穿过间隔层05,凸起04的高度等于通孔03的深度与间隔层05厚度之和。
需要说明的是,间隔层05上设置有与所述凸起04一一对应的孔。此外,对于间隔层05的材料,只要保证不会使其与第一子承载基板01黏在一起,且不会损伤第一子承载基板01和第二子承载基板02即可。
本发明实施例通过在第一子承载基板01上设置凸起04,且使凸起04的高度等于通孔03的深度与间隔层05厚度之和,不但可以防止第一子承载基板01和第二子承载基板02黏在一起,而且易于控制第一子承载基板01或第二子承载基板02的移动,以保证对合后第二子承载基板02的凸起04穿过通孔03而与第一子承载基板01的表面齐平。
进一步的,考虑到树脂材料的化学稳定性强,不会对与其接触的第一子承载基板01和第二子承载基板02造成损伤,因此,本发明实施例优选间隔层05的材料为树脂材料。
基于上述,考虑到圆柱形的通孔03和凸起04容易制成,因此,本发明实施例优选通孔03和凸起04的形状为圆柱形。
本发明实施例还提供一种柔性显示器件的制备方法,如图8所示包括如下步骤:
S10、如图9所示,在上述的承载基板的拼接表面形成粘结层10。
此处,拼接表面即为第一子承载基板01的远离第二子承载基板02的表面,也即承载面。
S11、如图9所示,在粘结层10上形成柔性衬底11,并在柔性衬底11上形成显示元件12。
此处,不对显示元件12进行限定,需基于柔性显示器件的类型具体而定。
S12、如图10所示,将承载基板的第一子承载基板01和第二子承载基板02分离。
需要说明的是,当所述承载基板还包括设置在第二子承载基板02上的间隔层05时,在第一子承载基板01和第二子承载基板02分离时,间隔层05跟随第二子承载基板02一同与第一子承载基板01分离。
此外,不对第一子承载基板01和第二子承载基板02分离方式进行限定,只要能保证不对柔性衬底11和显示元件12造成损伤即可。
S13、采用清洗液,通过第一子承载基板01上的通孔03,使粘结层10去除,以使第一子承载基板01与柔性衬底11分离,形成如图11所示的柔性显示器件。其中,清洗液不与第一子承载基板01和柔性衬底11发生反应。
本步骤中,可将经过S12步骤后的半成品放入清洗液中,以使清洗液可以通过第一子承载基板01上的通孔03,使粘结层10去除。
本发明实施例提供一种柔性显示器件的制备方法,通过将承载基板设置为包括第一子承载基板01和第二子承载基板02的结构,可以在承载基板用于制作柔性显示器件时,先在第一子承载基板01和第二子承载基板02对合后的拼接表面上形成粘结层10,之后在粘结层10上形成依次形成柔性衬底11和显示元件12,这样在后续柔性衬底11剥离时,可先将第二子承载基板02与第一子承载基板01分离,而由于第一子承载基板01具有通孔03,可方便清洗液从通孔03进入,而将粘结层10材料清洗掉,从而实现第一子承载基板01与柔性衬底11的分离。相对现有技术中的机械方式和激光方式,本发明可达到将柔性衬底11与承载基板均匀分离的目的,且不会对显示元件12造成损伤。其中,通过控制粘结层10和清洗液的材料,也不会对柔性衬底11和第一子承载基板01造成损伤,使得承载基板可以重复使用,从而降低成本。
考虑到有机硅聚合物材料具有良好的化学惰性,不会与柔性衬底11和承载基板发生化学反应,因此,本发明实施例优选粘结层10的材料为有机硅聚合物材料,如聚二甲基硅氧烷。
可选的,将承载基板的第一子承载基板01和第二子承载基板02分离,包括:采用机械方式或者静电力方式,将承载基板的第一子承载基板01和第二子承载基板02分离。
此处相对现有技术中的机械方式,由于本发明柔性衬底11被第一子承载基板01完全覆盖,因此,在此过程中不会对柔性衬底11造成损伤。
可选的,在第二子承载基板02的正投影面积大于第一子承载基板01的正投影面积的情况下,将承载基板的第一子承载基板01和第二子承载基板02分离,包括:从第二子承载基板02的上方,向第二子承载基板02的边缘施加惰性气体,通过气体压力,将所述承载基板的第一子承载基板01和第二子承载基板02分离。
采用气体压力的方式,不但可以保证将承载基板的第一子承载基板01和第二子承载基板02分离,同时也不会对显示元件12、柔性衬底11以及承载基板造成损伤。
基于上述,优选的,显示元件为OLED显示元件;或者,所述显示元件为液晶显示元件。
其中,OLED显示元件可以包括薄膜晶体管、阳极、阴极、以及位于阳极和阴极之间的有机材料功能层,其中,由于有机材料功能层的特殊性,OLED显示元件还包括封装层。
液晶显示元件包括位于阵列基板上的薄膜晶体管、像素电极等,以及位于对盒基板上的彩色滤光层。其中,公共电极可设置在阵列基板上,也可设置在对盒基板上,彩色滤光层可设置在对盒基板上,也可设置在阵列基板上。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。

Claims (10)

1.一种柔性显示器件的制备方法,其特征在于,包括:
在承载基板的拼接表面形成粘结层,所述承载基板包括层叠设置的第一子承载基板和第二子承载基板,所述第一子承载基板具有多个通孔,所述第二子承载基板具有多个凸起,所述凸起与所述通孔一一对应,所述凸起穿过所述通孔与所述第一子承载基板的表面齐平,且所述凸起与所述表面拼接在一起;
在所述粘结层上形成柔性衬底,并在所述柔性衬底上形成显示元件;
将所述承载基板的所述第一子承载基板和第二子承载基板分离;
采用清洗液,通过所述第一子承载基板上的通孔,使所述粘结层去除,以使所述第一子承载基板与所述柔性衬底分离,形成所述柔性显示器件;
其中,所述清洗液不与所述第一子承载基板和所述柔性衬底发生反应。
2.根据权利要求1所述的制备方法,其特征在于,将所述承载基板的所述第一子承载基板和第二子承载基板分离,包括:
采用机械方式或者静电力方式,将所述承载基板的所述第一子承载基板和第二子承载基板分离;或者,
在所述第二子承载基板的正投影面积大于所述第一子承载基板的正投影面积的情况下,从所述第二子承载基板的上方,向所述第二子承载基板的边缘施加惰性气体,通过气体压力,将所述承载基板的所述第一子承载基板和第二子承载基板分离。
3.根据权利要求1所述的制备方法,其特征在于,所述粘结层的材料为有机硅聚合物材料。
4.根据权利要求1-3任一项所述的制备方法,其特征在于,所述显示元件为OLED显示元件;或者,所述显示元件为液晶显示元件。
5.根据权利要求1所述的制备方法,其特征在于,沿垂直所述第一子承载基板和所述第二子承载基板的拼接表面的方向,所述第二子承载基板的正投影面积大于所述第一子承载基板的正投影面积。
6.根据权利要求1或5所述的制备方法,其特征在于,所述凸起的高度等于所述通孔的深度。
7.根据权利要求1或5所述的制备方法,其特征在于,所述凸起的高度大于所述通孔的深度。
8.根据权利要求7所述的制备方法,其特征在于,还包括覆盖在所述第二子承载基板面向所述第一子承载基板一侧的间隔层,所述凸起穿过所述间隔层;
所述凸起的高度等于所述通孔的深度与所述间隔层厚度之和。
9.根据权利要求8所述的制备方法,其特征在于,所述间隔层的材料为树脂材料。
10.根据权利要求1所述的制备方法,其特征在于,所述通孔的形状为圆柱形;所述凸起的形状为圆柱形。
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298620B (zh) * 2016-09-08 2019-07-16 京东方科技集团股份有限公司 一种承载基板及柔性显示器件的制备方法
CN206322700U (zh) 2017-01-09 2017-07-11 昆山工研院新型平板显示技术中心有限公司 柔性显示器
CN106684243B (zh) * 2017-02-15 2019-04-09 厦门天马微电子有限公司 一种柔性显示面板及显示装置
CN108666353B (zh) 2018-05-14 2020-07-24 云谷(固安)科技有限公司 显示面板及其制作方法
CN109192754B (zh) * 2018-08-08 2021-03-02 Tcl华星光电技术有限公司 刚性承载基板以及柔性oled显示面板的制备方法
CN115909911A (zh) * 2018-11-19 2023-04-04 群创光电股份有限公司 拼接装置和电子装置
CN113228142B (zh) * 2018-12-21 2023-10-31 巴科股份有限公司 具有改善的平整度的用于拼接式显示器的显示器块
US11508922B2 (en) * 2019-08-27 2022-11-22 Samsung Display Co., Ltd. Display device including elastic member
CN110675750B (zh) * 2019-09-24 2022-02-22 云谷(固安)科技有限公司 载体基板、柔性显示面板及柔性显示面板的制作方法
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Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185519A (ja) * 1999-12-24 2001-07-06 Hitachi Ltd 半導体装置及びその製造方法
US20050259191A1 (en) * 2004-05-20 2005-11-24 Jong-Dae Park Supporting unit for liquid crystal display apparatus, backlight assembly and liquid crystal display apparatus having the same
US20040247084A1 (en) * 2003-05-23 2004-12-09 Edgar Alzner Cleansing member for image scanning assemblies
JP4799274B2 (ja) * 2006-05-26 2011-10-26 京セラ株式会社 フレキシブル基板モジュール
WO2013114616A1 (ja) * 2012-02-03 2013-08-08 三洋電機株式会社 スクリーン印刷装置及びそれを用いた半導体装置の製造方法
CN102810512B (zh) * 2012-07-16 2014-07-02 京东方科技集团股份有限公司 一种柔性显示器件的制造方法
CN102856167B (zh) * 2012-09-14 2015-09-09 京东方科技集团股份有限公司 柔性基板处理方法和承载基板
CN105549338B (zh) * 2016-02-18 2018-02-16 武汉华星光电技术有限公司 曝光量测装置及其量测平台
CN105629681B (zh) * 2016-04-07 2018-12-21 京东方科技集团股份有限公司 一种承载基台、曝光装置及曝光方法
CN106298620B (zh) * 2016-09-08 2019-07-16 京东方科技集团股份有限公司 一种承载基板及柔性显示器件的制备方法

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