CN106207717A - A kind of multi beam terahertz radiation source of optically-based beat effect - Google Patents
A kind of multi beam terahertz radiation source of optically-based beat effect Download PDFInfo
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- CN106207717A CN106207717A CN201610820304.1A CN201610820304A CN106207717A CN 106207717 A CN106207717 A CN 106207717A CN 201610820304 A CN201610820304 A CN 201610820304A CN 106207717 A CN106207717 A CN 106207717A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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Abstract
The invention discloses the multi beam terahertz radiation source of a kind of optically-based beat effect, from the pump light incidence KTP optical parametric oscillator of pumping source outgoing, produce two bundle polarized orthogonal difference frequency lights through optical parameter effect;Two bundle polarized orthogonal difference frequency lights become two bundles after Glan prism through quarter-wave plate and polarize parallel difference frequency light;Two bundle polarization parallel difference frequency light vertical incidence PPLN crystal after optical beam scanner, and from crystal outgoing after crystal left-half and right half part occur multiple total reflection respectively;Restrainting difference frequency light and THz wave meets quasi-phase matched in each total reflection point two, produce THz wave through optical difference frequency effect, THz wave wave vector is perpendicular to crystal and from crystal outgoing;Multiple total reflection point can be set in PPLN crystal such that it is able to produces multi beam THz wave.Two bundle difference frequency lights can produce multi beam THz ripple, is effectively improved difference frequency light utilization ratio and THz ripple conversion quantum efficiency.
Description
Technical field
The invention belongs to THz wave technical applications, be specifically related to the multiple beam of a kind of optically-based beat effect too
Hertz wave radiation source.
Background technology
(Terahertz is called for short THz, 1THz=10 to Terahertz12Hz) ripple refers to frequency electricity in the range of 0.1-10 THz
Magnetic wave, its wave band is between millimeter wave and infrared waves.This wave band is considered as not only traditional microwave wave band and optics ripple
The region that section is connected mutually, and the transition being also considered as both macro and micro is interval.Different from two adjacent wave bands, because lacking
The generation of weary effective THz wave and Detection Techniques, terahertz wave band does not the most obtain more systematic research.Cause
Understanding for people's characteristic various to terahertz wave band is the most limited, so terahertz wave band is also referred to as electromagnetic spectrum
" Terahertz space ".
THz wave between microwave band and light-wave band has much special character.First, many organic
The vibration of macromole and rotational frequency are concentrated mainly on terahertz wave band, thus corresponding THz wave can be produced strong by they
Absorption and resonance.This characteristic can be used in inspection some special compound, such as drugs.Secondly, THz wave
Can penetrate some at the opaque material of visible ray and infrared band, such as: medicated clothing, timber, paper and plastics etc..Therefore, I
Terahertz emission detection of concealed can be utilized in these entrainments in the material that terahertz wave band is transparent, defect, damage
Wound etc..Again, compared with X-ray, THz wave has longer wavelength.So, at the energy of the single photon of terahertz wave band
Amount will be more much lower than the photon energy at X-ray wave band.Then, in medical science and the application in terms of biology, Terahertz
Bob X-ray shows higher safety.Finally, comparing with microwave, the wavelength of THz wave is shorter.Therefore,
In the application of imaging, THz wave imaging has more higher spatial resolution than microwave imaging so that formed image is more
Clearly.And in the communications field, terahertz wave band has broader bandwidth than microwave band.
Lack can produce high power, high-quality, high efficiency THz wave, and low cost and can at room temperature operate
THz source be the subject matter faced at present.The production method of THz wave mainly has electronics method and photonic propulsion at present
Method.Electronics method is typically from millimeter wave, the wavelength of electromagnetic radiation to be extended to terahertz wave band, is also equivalent to one
Frequency becomes big process, but can run into the biggest obstacle when frequency is more than 1THz, to such an extent as to efficiency change is the lowest, electricity simultaneously
The terahertz radiation source that sub-method produces is bulky, limits its application in a lot of fields.And photonic propulsion method
Its Main way is exactly that visible ray or infrared light are changed to terahertz wave band.The advantage of the method is the THz spoke produced
The source of penetrating has the highest coherence and directivity, but the THz wave power of present stage generation and efficiency are the most relatively low.
Summary of the invention
It is an object of the invention to provide the multiple beam terahertz radiation source of a kind of optically-based beat effect, in order to solve
The problems such as existing THz wave power is low, efficiency is low.
It is an object of the invention to realize in the following manner:
The multi beam terahertz radiation source of a kind of optically-based beat effect, including pumping source, KTP optical parametric oscillator, filter
Ripple mirror, quarter-wave plate, Glan prism, optical beam scanner and PPLN crystal;
From the pump light incidence KTP optical parametric oscillator of pumping source outgoing, produce two bundle polarized orthogonals through optical parameter effect
Difference frequency light;Two bundle polarized orthogonal difference frequency lights become two bundles after Glan prism through quarter-wave plate and polarize parallel difference frequency light;Two
Bundle polarization parallel difference frequency light vertical incidence PPLN crystal after optical beam scanner, and in crystal left-half and right half part difference
From crystal outgoing after generation multiple total reflection;Difference frequency light is restrainted and THz wave meets quasi-phase place in each total reflection point two
Joining, produce THz wave through optical difference frequency effect, THz wave wave vector is perpendicular to crystal and from crystal outgoing;In PPLN crystal
Multiple total reflection point can be set such that it is able to produces multi beam THz wave.
Described KTP optical parametric oscillator includes the first plane mirror, the first ktp crystal, the second ktp crystal and the second plane
Mirror, is inputted by the first plane mirror from the pump light of pumping source outgoing, and sequentially passes through the first ktp crystal and the second ktp crystal,
Eventually by the second plane mirror output.
The pump light that described pumping source sends is through incident two pieces of identical first ktp crystals and second of the first plane mirror
Ktp crystal, uses II type-Ⅱphase matching (o → e+o) mode, produces two bundle difference frequency lights through optical parameter effectλ 1Withλ 2, first
Ktp crystal and the second ktp crystal are symmetrically placed, and the i.e. first ktp crystal rotates 180 ° along Z axis and obtains the second ktp crystal, so puts
Put and can eliminate difference frequency lightλ 1Withλ 2Walking off in ktp crystal;Difference frequency lightλ 1Withλ 2By the first plane mirror and the second plane mirror
In the resonator cavity of composition, vibration is amplified, and exports through the second plane mirror.
Described first plane mirror is high thoroughly to 532nm light, and high anti-to 900-1200nm light, the second plane mirror is to 900-1200nm
Light transmission rate is 20%.
The size of described first ktp crystal and the second ktp crystal is 15mm(X axle) × 7mm(Y axle) × 8mm(Z axle).
The right side of described PPLN crystal is provided with the first polyethylene lens, and the left side of PPLN crystal is provided with the second polyethylene
Lens, the multi beam THz wave of outgoing on the right side of PPLN crystal is focused on by the first polyethylene lens, and on the left of PPLN crystal, outgoing is many
Bundle THz wave is focused on by the second polyethylene lens.
Described pumping source is 532nm green glow continuous wave laser, and live width is at 1MHz, and power is 20W.
532nm pump light 45° angle height is reflected by described filter mirror, to difference frequency lightλ 1Withλ 2Highly transmissive.
Described PPLN crystal is parallelogram at X-Y plane, is divided into left-half and right half part, and its optical axis is parallel to
The polarization direction of two bundle difference frequency lights, it is poor that the polarization cycle vector of PPLN crystal left-half and right half part is respectively perpendicular to upper left
Frequently light wave resultant upper right difference frequency light wave vector.
It is coated with difference frequency light total reflection film on the THz wave exit facet of described PPLN crystal.
The multiple beam terahertz radiation source of the optically-based beat effect of the present invention with existing based on beat effect too
Hertzion radiation source is compared, and has the advantage that
(1) two bundle difference frequency light can produce multi beam THz ripple, is effectively improved difference frequency light utilization ratio and THz ripple conversion quantum efficiency.
(2) difference frequency process uses quasi-phase matched mode, and two bundle difference frequency lights and THz ripple conllinear interact, and are effectively improved
Three-wave interaction volume.
(3) THz wave-wave is vowed and is perpendicular to crystal, directly from plane of crystal outgoing, it is not necessary to other output couplers, reduces
THz ripple coupling-out losses.
(4) ktp crystal optical parametric oscillator is utilized to obtain two bundle difference frequency lights of wavelength tuning, it is possible to achieve THz ripple
Frequency tuning exports, and tuning manner is simple, flexible operation.
Accompanying drawing explanation
Fig. 1 is the structure principle chart of the embodiment of the present invention.
Fig. 2 is for two bundle difference frequency light and THz wave phase matched schematic diagram, k in figure in PPLN crystal1、k2、kT、kΛPoint
Wei difference frequency lightλ 1, difference frequency lightλ 2, THz wave, the wave vector in PPLN Crystal polarization cycle, θ angle is difference frequency light wave vector k1With THz ripple
Wave vector kTBetween angle.
Fig. 3 is the relation between phase matching angle θ, THz wave frequency, PPLN polarization cycle Λ, supposes λ in figure1For
1064nm。
Wherein, 1 is pumping source;2 is the first plane mirror;3 is the first ktp crystal;4 is the second ktp crystal;5 is second flat
Face mirror;6 is filter mirror;7 is quarter-wave plate;8 is Glan prism;9 is optical beam scanner;10 is PPLN crystal;11 is
One polyethylene lens;12 is the second polyethylene lens.
Detailed description of the invention
As shown in Figure 1, the multi beam terahertz radiation source of a kind of optically-based beat effect, it is characterised in that: include
Pumping source 1, KTP optical parametric oscillator, filter mirror 6, quarter-wave plate 7, Glan prism 8, optical beam scanner 9 and PPLN are brilliant
Body 10;Wherein, PPLN crystal 10 is periodically poled lithium niobate crystal.
From the pump light incidence KTP optical parametric oscillator of pumping source 1 outgoing, produce two bundle polarizations through optical parameter effect
Orthogonal difference frequency light;Two bundle polarized orthogonal difference frequency lights become two bundles after Glan prism 8 through quarter-wave plate 7 and polarize parallel difference frequency
Light;Two bundle polarization parallel difference frequency light vertical incidence PPLN crystal 10 after optical beam scanner 9, and in crystal left-half and right half
From crystal outgoing after part generation multiple total reflection respectively;Difference frequency light and the satisfied standard of THz wave is restrainted in each total reflection point two
Phase matched, produces THz wave through optical difference frequency effect, and THz wave wave vector is perpendicular to crystal and from crystal outgoing;At PPLN
In crystal 10, multiple total reflection point can be set such that it is able to produce multi beam THz wave.
KTP optical parametric oscillator includes the first plane mirror the 2, first ktp crystal the 3, second ktp crystal 4 and the second plane
Mirror 5, is inputted by the first plane mirror 2 from the pump light of pumping source 1 outgoing, and it is brilliant to sequentially pass through the first ktp crystal 3 and the 2nd KTP
Body 4, is finally exported by the second plane mirror 5.
The pump light that pumping source 1 sends is through incident two pieces of identical first ktp crystals 3 and second of the first plane mirror 2
Ktp crystal 4, uses II type-Ⅱphase matching (o → e+o) mode, produces two bundle difference frequency lights through optical parameter effectλ 1Withλ 2, first
Ktp crystal 3 and the second ktp crystal 4 are symmetrically placed, and the i.e. first ktp crystal 3 rotates 180 ° along Z axis and obtains the second ktp crystal 4, this
Sample is placed can eliminate difference frequency lightλ 1Withλ 2Walking off in ktp crystal;Difference frequency lightλ 1Withλ 2By the first plane mirror 2 and second
In the resonator cavity of plane mirror 5 composition, vibration is amplified, and exports through the second plane mirror 5.By adjusted in concert the first ktp crystal 3 He
The azimuth of the second ktp crystal 4 can obtain the difference frequency light of wavelength tuningλ 1Withλ 2。
First plane mirror 2 is high thoroughly to 532nm light, and high anti-to 900-1200nm light, the second plane mirror 5 is to 900-1200nm light
Transmitance is 20%.
The size of the first ktp crystal 3 and the second ktp crystal 4 is 15mm(X axle) × 7mm(Y axle) × 8mm(Z axle).
The right side of PPLN crystal 10 is provided with the first polyethylene lens 11, and the left side of PPLN crystal 10 is provided with the second poly-second
Alkene lens 12, the multi beam THz wave of outgoing on the right side of PPLN crystal 10 is focused on by the first polyethylene lens 11, and PPLN crystal 10 is left
The multi beam THz wave of side outgoing is focused on by the second polyethylene lens 12.
Pumping source 1 is 532nm green glow continuous wave laser, and live width is at 1MHz, and power is 20W.
532nm pump light 45° angle height is reflected by filter mirror 6, to difference frequency lightλ 1Withλ 2Highly transmissive.
PPLN crystal 10 is parallelogram at X-Y plane, is divided into left-half and right half part, and its optical axis is parallel to two
The polarization direction of bundle difference frequency light, it is poor that the polarization cycle vector of PPLN crystal 10 left-half and right half part is respectively perpendicular to upper left
Frequently light wave resultant upper right difference frequency light wave vector.
Difference frequency light total reflection film, i.e. 900-1200nm light total reflection it is coated with on the THz wave exit facet of PPLN crystal 10
Film.
The work process of the present invention is as follows: incident two pieces of identical first ktp crystals of the pump light that pumping source 1 sends
3 and second ktp crystal 4, use II type-Ⅱphase matching (o → e+o) mode, produce two bundle difference frequency lights through optical parameter effectλ 1
Withλ 2.First ktp crystal 3 and the second ktp crystal 4 are symmetrically placed, and the i.e. first ktp crystal 3 rotates 180 ° along Z axis and obtains second
Ktp crystal 4, it is positioned such that eliminate difference frequency lightλ 1Withλ 2Walking off in the first ktp crystal 3 and the second ktp crystal 4.Difference frequency
Lightλ 1Withλ 2In the resonator cavity being made up of the first plane mirror 2 and the second plane mirror 5, vibration is amplified, and exports through the second plane mirror 5,
Pump light 1 filters out via filter mirror 6.The difference frequency light λ that ktp crystal parametric process produces1And λ2Polarization direction is orthogonal, warp
Crossing quarter-wave plate 7 and become parallel with both polarization directions after Glan prism 8, polarization direction is parallel to the light of PPLN crystal 10
Axle.Two bundle polarization parallel difference frequency light vertical incidence PPLN crystal 10 after optical beam scanner 9, at the THz wave of PPLN crystal 10
Difference frequency light total reflection film is plated on exit facet.Difference frequency light occurs repeatedly to be all-trans in PPLN crystal 10 left-half and right half part respectively
From PPLN crystal 10 outgoing after penetrating.Difference frequency light is restrainted and THz wave meets quasi-phase matched, through light in each total reflection point two
Learning beat effect and produce THz wave, THz wave wave vector is perpendicular to PPLN crystal 10 and from PPLN crystal 10 outgoing, difference frequency light
With the phase matched of THz wave as shown in Figure 2.Multiple total reflection point is set in PPLN crystal 10, it is possible to produce multi beam terahertz
Hereby wave radiation.The right multi beam THz wave is focused on by the first polyethylene lens 11, and left side multi beam THz wave is by the second polyethylene
Lens 12 focus on.Change ktp crystal optical parametric oscillator phase-matching condition, it is thus achieved that two bundle difference frequency lights of wavelength tuning, can
To obtain the THz wave of frequency tuning.As it is shown on figure 3, work as difference frequency lightλ 1Wavelength when being 1064nm, by changing difference frequency lightλ 2
Wavelength can obtain the frequency tuning range THz wave in 0.5-6THz scope, the model of corresponding PPLN Crystal polarization periods lambda
Enclosing for 140.4-7.1 μm, phase matching angle θ is in the range of 63.6 °-72.6 °.
Above-described is only the preferred embodiment of the present invention, it is noted that for a person skilled in the art,
Without departing under general idea premise of the present invention, it is also possible to making some changes and improvements, these also should be considered as the present invention's
Protection domain.
Claims (10)
1. the multi beam terahertz radiation source of an optically-based beat effect, it is characterised in that: include pumping source (1), KTP light
Learn parametric oscillator, filter mirror (6), quarter-wave plate (7), Glan prism (8), optical beam scanner (9) and PPLN crystal
(10);
From the pump light incidence KTP optical parametric oscillator of pumping source (1) outgoing, just producing two bundle polarizations through optical parameter effect
Hand over difference frequency light;Two bundle polarized orthogonal difference frequency lights become two bundle polarization parallel errors after quarter-wave plate (7) and Glan prism (8)
Frequently light;Two bundle polarization parallel difference frequency light vertical incidence PPLN crystal (10) after optical beam scanner (9), and in crystal left-half
Occur respectively after multiple total reflection from crystal outgoing with right half part;Difference frequency light and THz wave is restrainted in each total reflection point two
Meeting quasi-phase matched, produce THz wave through optical difference frequency effect, THz wave wave vector is perpendicular to crystal and from crystal outgoing;
Multiple total reflection point can be set in PPLN crystal (10) such that it is able to produce multi beam THz wave.
The multi beam terahertz radiation source of optically-based beat effect the most according to claim 1, it is characterised in that: described
KTP optical parametric oscillator includes the first plane mirror (2), the first ktp crystal (3), the second ktp crystal (4) and the second plane mirror
(5), inputted by the first plane mirror (2) from the pump light of pumping source (1) outgoing, and sequentially pass through the first ktp crystal (3) and second
Ktp crystal (4), is finally exported by the second plane mirror (5).
The multi beam terahertz radiation source of optically-based beat effect the most according to claim 2, it is characterised in that: institute
State pump light that pumping source (1) sends through incident two pieces of identical first ktp crystals (3) and second of the first plane mirror (2)
Ktp crystal (4), uses II type-Ⅱphase matching (o → e+o) mode, produces two bundle difference frequency lights through optical parameter effectλ 1Withλ 2, the
One ktp crystal (3) and the second ktp crystal (4) are symmetrically placed, and the i.e. first ktp crystal (3) rotates 180 ° along Z axis and obtains the 2nd KTP
Crystal (4), it is positioned such that eliminate difference frequency lightλ 1Withλ 2Walking off in ktp crystal;Difference frequency lightλ 1Withλ 2By the first plane
In the resonator cavity that mirror (2) and the second plane mirror (5) form, vibration is amplified, and exports through the second plane mirror (5).
The multi beam terahertz radiation source of optically-based beat effect the most according to claim 2, it is characterised in that: described
First plane mirror (2) is high thoroughly to 532nm light, and high anti-to 900-1200nm light, the second plane mirror (5) is to 900-1200nm light transmission
Rate is 20%.
The multi beam terahertz radiation source of optically-based beat effect the most according to claim 2, it is characterised in that: described
The size of the first ktp crystal (3) and the second ktp crystal (4) is 15mm(X axle) × 7mm(Y axle) × 8mm(Z axle).
The multi beam terahertz radiation source of optically-based beat effect the most according to claim 1, it is characterised in that: described
The right side of PPLN crystal (10) is provided with the first polyethylene lens (11), and the left side of PPLN crystal (10) is provided with the second polyethylene
Lens (12), the multi beam THz wave of PPLN crystal (10) right side outgoing is focused on by the first polyethylene lens (11), PPLN crystal
(10) the multi beam THz wave of left side outgoing is focused on by the second polyethylene lens (12).
The multi beam terahertz radiation source of optically-based beat effect the most according to claim 1, it is characterised in that: described
Pumping source (1) is 532nm green glow continuous wave laser, and live width is at 1MHz, and power is 20W.
The multi beam terahertz radiation source of optically-based beat effect the most according to claim 1, it is characterised in that: described
532nm pump light 45° angle height is reflected by filter mirror (6), to difference frequency lightλ 1Withλ 2Highly transmissive.
The multi beam terahertz radiation source of optically-based beat effect the most according to claim 1, it is characterised in that: described
PPLN crystal (10) is parallelogram at X-Y plane, is divided into left-half and right half part, and its optical axis is parallel to two bundle difference frequencies
The polarization direction of light, the polarization cycle vector of PPLN crystal (10) left-half and right half part is respectively perpendicular to upper left difference frequency light
Wave vector and upper right difference frequency light wave vector.
The multi beam terahertz radiation source of optically-based beat effect the most according to claim 1, it is characterised in that: institute
State and be coated with difference frequency light total reflection film on the THz wave exit facet of PPLN crystal (10).
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WO2023082189A1 (en) * | 2021-11-12 | 2023-05-19 | 中国科学院深圳先进技术研究院 | Terahertz on-chip integrated chip and control method therefor, and on-chip integrated system |
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WO2023082189A1 (en) * | 2021-11-12 | 2023-05-19 | 中国科学院深圳先进技术研究院 | Terahertz on-chip integrated chip and control method therefor, and on-chip integrated system |
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