CN106199368B - Non-contact silicon-based photoelectric device minority carrier lifetime detector and detection method - Google Patents
Non-contact silicon-based photoelectric device minority carrier lifetime detector and detection method Download PDFInfo
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Abstract
The invention relates to a non-contact detector and a detection method for the minority carrier lifetime of a silicon-based photoelectric device. The light source excites the silicon-based photoelectric device to emit fluorescence, the fluorescence on the other side of the silicon-based photoelectric device is received through multi-point detection of the detector and converted into an electric signal, the amplitude of the fluorescence and the phase difference between the fluorescence and the light source are obtained through the signal amplifier and the phase-locked amplifier, and the processing control unit calculates and outputs a minority carrier service life distribution diagram. When silicon-based photoelectric devices of different specifications are replaced, calibration is not needed, the silicon-based photoelectric devices are arranged between the light source and the detector, the influence of the light source on detection is reduced, the accuracy of measurement is improved, and a distribution map of the service life of minority carriers is conveniently obtained through multi-point detection.
Description
Technical Field
The invention relates to a nondestructive testing method for minority carrier transmission parameters of a silicon-based photoelectric device, in particular to a non-contact type silicon-based photoelectric device minority carrier service life detector and a testing method.
Background
With the development of the preparation technology of novel semiconductor materials, the demand of solar cells with high performance and high conversion efficiency is continuously increased, and the industrial demand of modern solar cells reaches the GW magnitude. The quality control and evaluation of semiconductor material preparation have become key problems. It is well known that minority carrier lifetime is an important parameter in the measurement of semiconductors and their products.
Currently, representative semiconductor minority carrier lifetime detection technologies mainly include Electroluminescence (EL), photoconductive decay detection (photo luminescence decay-PCD), photoluminescence detection (photo luminescence-PL), photo-thermal luminescence detection (photo luminescence-PTR), and the like. The method is quick and accurate, but needs to apply bias voltage, which is easy to cause secondary damage when contacting with the solar cell, and requires an electrode. Photoconductive decay detection (PCD) is an accurate, rapid and non-contact test method, but the method has certain requirements on the shape size and the resistivity of a semiconductor sample to be tested, the average carrier life of the semiconductor is measured, the measurement of the minority carrier life distribution is difficult to realize, and in addition, when the semiconductor material with short carrier life is measured, an electronic device is required to rapidly record light pulse and photoconductive decay signals, and the sensitivity is low. The photothermal radiation detection (PTR) technology is a non-contact nondestructive detection method, and is applied to the detection of the minority carrier lifetime of a semiconductor material, so that the calculated amount is large, and the analysis is complex. Photoluminescence detection (PL) is a method for rapidly and non-contact detecting the service life of minority carriers of a semiconductor silicon wafer, and the method can realize rapid detection of the service life distribution of the minority carriers of the semiconductor silicon wafer.
Although there are currently essentially mature minority carrier lifetime distribution detection methods, each of these methods is long and limited. The modulated photoluminescence carrier radiation luminescence (MPL) detection technology has the advantages of rapidness, non-contact, simple analysis, high sensitivity, no need of recalibrating an instrument due to replacement of a detected sample and the like, can realize the detection and distribution of the service life of minority carriers of a semiconductor sample, and has high resolution of the service life distribution of the minority carriers. Therefore, the method has important significance in realizing efficient and reliable detection of the service life distribution of the semiconductor minority carriers. The application method of the prior modulated polarization photoinduced carrier radiation luminescence detection technology is only used in a laboratory, and usually excites and collects a light source on the same surface of a solar cell, so that the collected light source is influenced to a certain extent, and a plurality of groups of lenses are required for exciting and collecting the light source, so that the detection is complex, the automatic point-by-point scanning detection cannot be realized, the service life distribution map of minority carriers formed in the later period is not accurate, and the detection result is influenced.
Disclosure of Invention
In order to solve the problems, the invention provides a non-contact silicon-based photoelectric device minority carrier lifetime detector and a detection method.
The technical scheme adopted by the invention for solving the problems is as follows: a non-contact detector for the service life of minority carriers of a silicon-based photoelectric device comprises a placing table for placing the silicon-based photoelectric device, a light source, a detector, a signal amplifier electrically connected with the detector, a phase-locked amplifier electrically connected with the signal amplifier, a processing control unit electrically connected with the phase-locked amplifier, and a function generator electrically connected with both the phase-locked amplifier and the processing control unit, wherein the function generator is connected with the electric light source, and when the silicon-based photoelectric device is placed on the placing table, the silicon-based photoelectric device is positioned between the light source and the detector.
Further specifically, the light source comprises a plurality of sub light sources arranged in an array, the detector comprises a plurality of sub detectors arranged in an array, the number of the signal amplifiers is the same as that of the sub detectors, the signal amplifiers and the sub detectors are connected in a one-to-one correspondence manner, and the number of the phase-locked amplifiers is the same as that of the signal amplifiers, and the phase-locked amplifiers and the signal amplifiers are connected in a one-to-one correspondence manner.
Further specifically, the non-contact silicon-based photoelectric device minority carrier lifetime detector further comprises an XY axis moving mechanism for driving the placing table to move on a plane where the placing table is located, and the XY axis moving mechanism is electrically connected with the processing control unit.
More specifically, the light source is an infrared light source made of light emitting diodes with the wavelength of 780 nm.
More specifically, when the silicon-based photoelectric device is placed on the placing table, the distance between the detector and the silicon-based photoelectric device is 1 mm-2 mm.
More specifically, the placing table is located between the light source and the detector, a light transmission area for placing an object to be detected is arranged on the placing table, and when the silicon-based photoelectric device is located on the light transmission area, the silicon-based photoelectric device is located between the light source and the detector.
More specifically, the light-transmitting area is made of semitransparent ground glass.
More specifically, the detector for the minority carrier lifetime of the non-contact silicon-based photoelectric device further comprises an optical filter positioned at the front end of the detector.
A non-contact silicon-based photoelectric device minority carrier lifetime detection method based on a non-contact silicon-based photoelectric device minority carrier lifetime detector is disclosed, and the detection method comprises the following steps:
s1: fixing the silicon-based photoelectric device on the placing table;
s2: the excitation light source emits light according to the intensity of the periodic waveform through the function generator, the light irradiates on the silicon-based photoelectric device to enable the silicon-based photoelectric device to emit light, and the light signal is collected on the other side of the silicon-based photoelectric device, which is far away from the light source, through the detector;
s3: the detector converts the optical signal into an electric signal and transmits the electric signal to the signal amplifier;
s4: the signal amplifier amplifies the electric signal for the first time to form a first amplified signal and then transmits the first amplified signal to the phase-locked amplifier;
s5: the phase-locked amplifier amplifies the first amplified signal for the second time and obtains the amplitude of the signal and the phase difference between the light source intensity and the luminous intensity of the silicon-based photoelectric device after the signal is processed by the phase-locked amplifier;
repeating the steps, carrying out multi-point detection on the silicon-based photoelectric device by using the detector to obtain a group of amplitude values and phase differences, and finally calculating the service life distribution of minority carriers by using a mathematical formula; the formula for calculating minority carrier lifetime using amplitude and phase information is as follows:
φ＝-arctan(ωτ eff )
wherein I AC Is the relative amplitude of the fluorescence signal, phi is the phase difference between the fluorescence signal and the signal generator output signal, omega is the angular frequency of the sinusoidal signal, tau eff The minority carrier lifetime to be measured.
More specifically, the light source adopts an infrared light source with the wavelength of 780nm, and the intensity of the infrared light source changes according to the sine wave rule.
The beneficial effects of the invention are: the phase difference is obtained by comparing the amplitude obtained by detection and the phase obtained by detection with the original phase, the service life parameter of the minority carrier is calculated by a corresponding calculation formula, the silicon-based photoelectric device can be directly used without calibration when silicon-based photoelectric devices of different specifications are replaced, the silicon-based photoelectric device is arranged between the light source and the detector, the influence of the light source on detection can be well reduced, the accuracy of measurement is improved, a distribution graph of the service life of the minority carrier is easily obtained by multi-point detection, the production quality of the silicon-based photoelectric device is further judged, and the detection efficiency is improved.
Drawings
FIG. 1 is a schematic structural view of a first embodiment of the inspection apparatus of the present invention;
FIG. 2 is a schematic structural diagram of a second embodiment of the detecting apparatus of the present invention.
In the figure: 1. an infrared light source; 2. a detector; 3. a signal amplifier; 4. a phase-locked amplifier; 5. a process control unit; 6. a function generator; 7. a placing table; 8. a silicon-based optoelectronic device; 8', a silicon-based solar cell; 9. an XY-axis moving mechanism; 10. a light-transmitting region; 11. combining infrared light sources; 21. combining detectors; 31. a signal amplifier combination; 41. a lock-in amplifier assembly.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
The non-contact silicon-based photoelectric device minority carrier lifetime detector has two embodiments.
The silicon-based photovoltaic device 8 is described below as embodied in a silicon-based solar cell 8', but the protection of the present application is not limited to only silicon-based solar cells 8'.
The embodiment of the first detector shown in fig. 1: firstly, a placing table 7 is arranged, the center of the placing table 7 is a light transmission area 10, a semitransparent frosted glass flat plate is arranged on the light transmission area 10, a silicon-based solar cell 8 is placed on the semitransparent frosted glass flat plate and completely covered, an infrared light source 1 is arranged inside the placing table 7, a detector 2 is arranged above the placing table 7, a silicon-based solar cell 8' is positioned between the infrared light source 1 and the detector 2, the detector 2 is connected with a signal amplifier 3 through a cable, the signal amplifier 3 is connected with a phase-locked amplifier 4 through a cable, the phase-locked amplifier 4 is connected with a processing control unit 5 through a cable, the processing control unit 5 is connected with a function generator 6 through a cable, the function generator 6 is respectively connected with the phase-locked amplifier 4 and the infrared light source 1 through cables, and the signal amplifier 3, the phase-locked amplifier 4, the processing control unit 5 and the function generator 6 are all integrated on the same PCB.
In order to complete the multipoint scanning type detection, the placing table 7 is translated in the horizontal direction through the XY-axis moving mechanism 9, the XY-axis moving mechanism 9 is controlled through the processing control unit 5, the scanning track is set in advance through the computer, and the placing table 7 moves according to the scanning track.
The XY-axis moving mechanism 9 is provided with a moving rail in the X direction and a moving rail in the Y direction below the placing table 7, and is provided with a motor in each of the X direction and the Y direction to realize movement in the X direction and the Y direction, and the motors are controlled by the processing control unit 5.
Further, the placing table 7 may be designed to move, the gantry on which the probe 2 is fixed may be designed to move in the X direction and the Y direction, or the placing table 7 may be designed to move in the X direction or the Y direction while the gantry on which the probe 2 is fixed moves in the Y direction or the X direction.
The embodiment of the first detector can realize automatic point-by-point scanning detection, the movement control of the first detector is guaranteed through the arrangement of a certain mechanical structure, in the actual use process, the movement of the mechanical structure needs a certain time, the detected silicon-based solar cell 8' needs to detect a plurality of points, the time consumption is long, and the detection effect is influenced, so the embodiment of the second detector is provided by the invention.
The second detector embodiment shown in FIG. 2: the second detector comprises the main components of the first detector, on the basis of the first detector, a movable mechanical structure is not needed any more, the placing table 7 and the rack for fixing the detector 2 are fixed, the light source is an infrared light source combination 11 formed by arranging a plurality of light emitting diode arrays with the wavelength of 780nm, the corresponding detector is a detector combination 21 formed by arranging a plurality of infrared detector arrays, a signal amplifier combination 31 formed by arranging a plurality of sub-signal amplifier arrays, and a lock-in amplifier combination 41 formed by arranging a plurality of sub-lock-in amplifier arrays. The fluorescence of the silicon-based solar cell 8' detected by the sub-detectors in the detector assembly 21 is converted into an electric signal and transmitted to the sub-signal amplifier in the signal amplifier assembly 31 for signal amplification, and then the signal is transmitted to the sub-lock-in amplifier in the lock-in amplifier assembly 41 for signal amplification to obtain an amplitude value and a phase difference, and then the signal is transmitted to the processing control unit 5 for processing and output.
In actual use, the detector combination 21, the signal amplifier combination 31 and the phase-locked amplifier combination 41 can be designed into a module structure, and when the detector combination is required to be used, a plurality of modules are spliced, so that silicon-based solar cells of different specifications and sizes can be rapidly detected conveniently, and the efficiency is improved.
The second detector embodiment realizes that the whole silicon-based solar cell 8' is detected within one detection time, saves a large amount of time, improves the actual detection efficiency, and overcomes the defects of point-by-point scanning of a mechanical platform and the like. The non-contact nondestructive testing method for simply, quickly and accurately acquiring the minority carrier lifetime distribution is provided.
The two embodiments can be automatically detected, so that the defects of focusing by using a complex optical system, impurity removal and light scattering of an optical filter and the like in the prior art are overcome, the quality supervision of industrial products is realized, the production efficiency and the detection precision are improved, the calibration is not needed, and the application range is widened.
According to the method for detecting the minority carrier lifetime of the non-contact silicon-based photoelectric device in the embodiment,
the central part of the placing platform 7 for placing the silicon-based solar cells 9 is a light transmission area 10, the light transmission area 10 is provided with a semitransparent ground glass flat plate, the silicon-based solar cells 8 'are flatly placed on the placing platform 7, and the shape and the size of the silicon-based solar cells 8' are required to be slightly larger than that of the semitransparent ground glass flat plate, so that the part can be completely covered.
The processing control unit 5 is connected to the function generator 6 through a cable, the function generator 6 is controlled to generate a sine signal with specific frequency, the signal is output to a power supply part of the infrared light source 1 through the cable, and the output infrared light intensity is changed according to the sine rule with the same frequency by modulating power supply voltage/current/power. The intensity of the light excited here is not limited to a sine wave, and other waveforms that vary periodically may be used.
The infrared light source 1 uses a light emitting diode with the wavelength of 780nm, the output modulated light is projected to the lower surface of the placing table 7, the placing table is made of semitransparent ground glass materials, a uniform light emitting surface is formed on the upper surface of the placing table 7 through the scattering effect of the semitransparent ground glass materials, the lower surface of the silicon-based solar cell 8 'placed on the placing table is illuminated, all parts of the silicon-based solar cell 8' are uniformly excited by the light, and unbalanced minority carriers are generated.
The non-equilibrium minority carrier radiation recombination emits fluorescence from the upper surface of the silicon-based solar cell 8', and the fluorescence emitted from different parts of the silicon-based solar cell 8' is obtained by a multi-point scanning mode of the detector 2 or simultaneously obtained by a detector combination 21 forming an array form; when the detector combination 21 is adopted, the infrared light source 1 can also form the infrared light source combination 11 in an array form by a plurality of light emitting diodes, when the detector combination 21 is used, the detector combination 21 is required to be close to but not contacted with the silicon-based solar cell 8 as much as possible and is positioned at the 1-2 mm high position above the silicon-based solar cell 8', and the infrared light source combination 11 is also excited by the same function generator 6 to obtain the light intensity with the same sine rule; other types of light sources may be used, with the infrared light source 1 being the most effective in practice.
The detector 2 performs photoelectric conversion on the fluorescence to obtain an electric signal, and the electric signal is output to the signal amplifier 3 through a cable to be amplified for the first time. When the detector assembly 21 receives fluorescence for photoelectric conversion, the connected signal amplifiers 3 are also arranged in a plurality of arrays to form a signal amplifier assembly 31, wherein the sub-detectors are connected with the sub-signal amplifiers in a one-to-one correspondence manner.
The signal amplifier 3 outputs the amplified signal to the lock-in amplifier 4 via the cable for the second amplification. In the case of the signal amplifier assembly 31, a corresponding lock-in amplifier assembly 41 formed by arranging a plurality of sub lock-in amplifier arrays is connected thereto, wherein the sub signal amplifiers and the sub lock-in amplifiers are connected in a one-to-one correspondence.
The lock-in amplifier 3 or the lock-in amplifier combination 31 amplifies the signal and calculates the amplitude of the fluorescence signal and the phase difference between the fluorescence signal and the output signal of the function generator 6, and outputs the signals to the processing control unit 5 for signal processing.
The processing control unit 5 calculates the minority carrier lifetime using the amplitude and phase information, and outputs a minority carrier lifetime distribution map.
The formula for calculating the minority carrier lifetime using amplitude and phase information is as follows:
φ＝-arctan(ωτ eff )
wherein I AC Is the relative amplitude of the fluorescence signal, phi is the phase difference between the fluorescence signal and the signal generator output signal, omega is the angular frequency of the sinusoidal signal, tau eff The minority carrier lifetime to be measured.
Through the analysis of the minority carrier lifetime distribution diagram, the quality of the silicon-based solar cell 8 'can be obtained, and therefore the production process of the silicon-based solar cell 8' is improved according to actual conditions.
It is to be emphasized that: the above embodiments are only preferred embodiments of the present invention, and are not intended to limit the present invention in any way, and all simple modifications, equivalent changes and modifications made to the above embodiments according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. The utility model provides a non-contact silicon-based photoelectric device minority carrier life detector, is including placing platform (7) that is used for placing silicon-based photoelectric device (8), light source, detector (2), signal amplifier (3) that are connected with detector (2) electricity, lock-in amplifier (4) that are connected with signal amplifier (3) electricity, processing control unit (5) that are connected with lock-in amplifier (4) electricity, function generator (6) that all are connected with lock-in amplifier (4) and processing control unit (5) electricity, function generator (6) be connected with the electric light source, characterized in that, when silicon-based photoelectric device (8) place on placing platform (7), silicon-based photoelectric device (8) are located between light source and detector (2).
2. The minority carrier lifetime detector of a non-contact silicon-based photoelectric device according to claim 1, wherein the light source comprises a plurality of sub light sources arranged in an array, the detector (2) comprises a plurality of sub detectors arranged in an array, the number of the signal amplifiers (3) is the same as the number of the sub detectors, and the signal amplifiers are connected in a one-to-one correspondence manner, and the number of the phase-locked amplifiers (4) is the same as the number of the signal amplifiers (3), and the signal amplifiers are connected in a one-to-one correspondence manner.
3. The minority carrier lifetime tester of the non-contact silicon-based photoelectric device according to claim 1, further comprising an XY-axis moving mechanism (9) for driving the placing table (7) to move on a plane on which the placing table (7) is located, wherein the XY-axis moving mechanism (9) is electrically connected with the process control unit (5).
4. The minority carrier lifetime detector of a non-contact silicon-based photoelectric device according to claim 1, wherein the light source is an infrared light source (1) made of a light emitting diode with a wavelength of 780 nm.
5. The minority carrier lifetime detector of a non-contact silicon-based photoelectric device according to claim 1, wherein when the silicon-based photoelectric device (8) is placed on the placing table, a distance between the detector (2) and the silicon-based photoelectric device (8) is 1mm to 2mm.
6. The minority carrier lifetime detector of a non-contact silicon-based photoelectric device according to claim 1, wherein the placing table (7) is located between the light source and the detector (2), a light-transmitting region (10) for placing the object to be detected (8) is arranged on the placing table (7), and when the silicon-based photoelectric device (8) is located on the light-transmitting region (10), the silicon-based photoelectric device (8) is located between the light source and the detector (2).
7. The minority carrier lifetime detector of a non-contact silicon-based photoelectric device according to claim 6, wherein the light transmission region (10) is made of semitransparent ground glass.
8. The minority carrier lifetime monitor of a non-contact silicon-based optoelectronic device according to claim 1, further comprising a filter located at a front end of the detector (2).
9. A non-contact silicon-based photoelectric device minority carrier lifetime detection method based on the non-contact silicon-based photoelectric device minority carrier lifetime detector of any one of claims 1 to 8, characterized in that the detection method comprises:
s1: fixing the silicon-based photoelectric device on the placing table;
s2: the excitation light source emits light according to the intensity of the periodic waveform through the function generator, the light irradiates on the silicon-based photoelectric device to enable the silicon-based photoelectric device to emit light, and the light signal is collected on the other side of the silicon-based photoelectric device, which is far away from the light source, through the detector;
s3: the detector converts the optical signal into an electric signal and transmits the electric signal to the signal amplifier;
s4: the signal amplifier amplifies the electric signal for the first time to form a first amplified signal and then transmits the first amplified signal to the phase-locked amplifier;
s5: the phase-locked amplifier amplifies the first amplified signal for the second time and obtains the amplitude of the signal and the phase difference between the light source intensity and the light intensity of the silicon-based photoelectric device after the signal is processed by the phase-locked amplifier;
repeating the steps, carrying out multi-point detection on the silicon-based photoelectric device by using the detector to obtain a group of amplitude values and phase differences, and finally calculating the service life distribution of minority carriers by using a mathematical formula; the formula for calculating minority carrier lifetime using amplitude and phase information is as follows:
φ＝-arctan(ωτ eff )
wherein I AC Is the relative amplitude of the fluorescence signal, phi is the phase difference between the fluorescence signal and the signal generator output signal, omega is the angular frequency of the sinusoidal signal, tau eff The minority carrier lifetime to be measured.
10. The method according to claim 9, wherein the light source is an infrared light source with a wavelength of 780nm, and the intensity of the infrared light source changes according to a sine wave.
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