CN106159046A - A kind of LED epitaxial structure improving GaN crystal quality - Google Patents
A kind of LED epitaxial structure improving GaN crystal quality Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000006798 recombination Effects 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000010287 polarization Effects 0.000 abstract description 6
- 230000002269 spontaneous effect Effects 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000605 extraction Methods 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 description 96
- 230000007547 defect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010583 slow cooling Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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Abstract
A kind of LED epitaxial structure improving GaN crystal quality, relates to LED epitaxial technical field.The present invention includes patterned substrate, GaN cushion, U-shaped GaN layer, N-type GaN layer, InGaN well layer, GaN barrier layer, electronic barrier layer and p-type GaN layer the most successively.It is structurally characterized in that, described U-shaped GaN layer includes U1 type GaN layer and U2 type GaN layer from bottom to up.Described U2 type GaN layer includes 2D type GaN layer and the 3D type GaN layer of alternating growth.Compared with the existing technology, the present invention can effectively reduce piezoelectricity and spontaneous polarization, improves radiation recombination probability, thus reaches to strengthen the purpose of LED light extraction efficiency.
Description
Technical field
The present invention relates to LED epitaxial technical field, particularly can improve the LED epitaxial structure of GaN crystal quality.
Background technology
GaN base material belongs to direct band-gap semicondictor, and its band gap is from 1.8-6.2V continuously adjustabe, to produce brightness blue light, green glow and the most frequently used material of white light LEDs, due to semiconductor diode have that volume is little, efficient, energy-conservation, length in service life, the feature such as environmental and durable and be widely used in the fields such as backlight, display screen, sensor, communication and illumination.Therefore, a lot of LED experts and scholars are devoted in the research and development of LED luminance, and epitaxial growth regime is particularly important on the impact of brightness.
Radiation recombination efficiency is the key point that epitaxial growth technology affects brightness, affects its many factors, and such as quantum limitation effect, polarity effect, the deep energy level that defect and impurity causes, these all can make radiation recombination efficiency decline.And defect concentration is the principal element affecting internal quantum efficiency, causing there is substantial amounts of non-radiative defect inside LED due to substrate and the lattice mismatch of epitaxial layer and thermal mismatching in growth course, dislocation density reaches 109cm-2～1011cm-2.And consequent spontaneous polarization and piezoelectric effect cause powerful built in field, the wave function causing electronics and hole separates in spatial distribution, i.e. quantum confined Stark effect QCSE, reduce luminous efficiency, and along with the increase of injection current and device use the rising of temperature, wavelength can drift about, and luminous efficiency also results in decline, i.e. Droop phenomenon.Defect too much will also result in P-N junction generation tunnel breakdown, thus is substantially reduced the antistatic effect of device, is easily caused component failure.
In prior art, referring to Fig. 1, LED epitaxial structure is followed successively by from top to bottom: patterned substrate 1, GaN cushion 2, U1 type gallium nitride layer 3, n type gallium nitride layer 4, InGaN well layer 5, GaN barrier layer 6, electronic barrier layer 7 and p-type gallium nitride layer 8.The lattice mismatch that above-mentioned tradition LED structure can not effectively overcome patterned substrate 1 to exist with GaN material, produces piezoelectricity and spontaneous polarization.Enable band severe bends, reduce the SQW limitation capability to carrier, thus produce bigger leakage current.And, the bending that can carry causes the hole that original concentration is the lowest, it is impossible to is evenly distributed on the active area being made up of InGaN well layer 5 and GaN barrier layer 6, thus reduces recombination probability, affects GaN crystal quality.
Summary of the invention
For above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of LED epitaxial structure improving GaN crystal quality.It can effectively reduce piezoelectricity and spontaneous polarization, improves radiation recombination probability, thus reaches to strengthen the purpose of LED light extraction efficiency.
In order to reach foregoing invention purpose, technical scheme realizes as follows:
A kind of LED epitaxial structure improving GaN crystal quality, it includes patterned substrate, GaN cushion, U-shaped GaN layer, N-type GaN layer, InGaN well layer, GaN barrier layer, electronic barrier layer and p-type GaN layer the most successively.It is structurally characterized in that, described U-shaped GaN layer includes U1 type GaN layer and U2 type GaN layer from bottom to up.Described U2 type GaN layer includes 2D type GaN layer and the 3D type GaN layer of alternating growth.
In above-mentioned LED epitaxial structure, described U2 type GaN layer grows in hydrogen nitrogen hybird environment, and growth cycle is 3-30 cycle.
In above-mentioned LED epitaxial structure, the 2D type GaN layer in described U2 type GaN layer first grows, then the pattern alternating growth of 3D type GaN layer regrowth.
In above-mentioned LED epitaxial structure, the growth temperature of described 2D type GaN layer is 1050-1110 DEG C, and thickness is 0.05-0.5um, growth pressure 100-300torr；The growth temperature of 3D type GaN layer is 990-1050 DEG C, and growth thickness is 0.05-0.5um, and growth pressure is 400-650torr.
Due to the fact that and have employed said structure, during growth blue-ray LED, use 3D and 2D superlattice growth structure, make bottom GaN crystal mass growth obtain more preferably.Present configuration can effectively reduce the piezoelectricity and spontaneous polarization caused due to the lattice mismatch of patterned substrate with GaN material existence, improves radiation recombination probability, reduces dislocation density, improve GaN crystal quality, reaches to strengthen the purpose of LED light extraction efficiency.
The present invention will be further described with detailed description of the invention below in conjunction with the accompanying drawings.
Accompanying drawing explanation
Fig. 1 is LED epitaxial structure schematic diagram in prior art；
Fig. 2 is the LED epitaxial structure schematic diagram of the present invention；
Fig. 3 is the structural representation of U2 type GaN layer extension in the present invention.
Detailed description of the invention
Referring to Fig. 2 and Fig. 3, the present invention includes patterned substrate 1, GaN cushion 2, U-shaped GaN layer, N-type GaN layer 4, InGaN well layer 5, GaN barrier layer 6, electronic barrier layer 7 and p-type GaN layer 8 the most successively.U-shaped GaN layer includes U1 type GaN layer 3 and U2 type GaN layer 40 from bottom to up.U2 type GaN layer 40 includes 2D type the GaN layer 401 and 3D type GaN layer 402 of alternating growth, and wherein 2D type GaN layer 401 first grows, then 3D type GaN layer 402 regrowth.U2 type GaN layer 40 grows in hydrogen nitrogen hybird environment, and growth cycle is 3-30 cycle.The growth temperature of 2D type GaN layer 401 is 1050-1110 DEG C, and thickness is 0.05-0.5um, growth pressure 100-300torr；The growth temperature of 3D type GaN402 layer is 990-1050 DEG C, and growth thickness is 0.05-0.5um, and growth pressure is 400-650torr.
The LED epitaxial structure that the present invention provides, by growing U2 type GaN layer 40 between U1 type GaN layer 3 and N-type GaN layer 4, can effectively reduce the stress produced because of lattice mismatch between patterned substrate 1 and GaN layer, thus reduce the generation of dislocation；And U2 type GaN layer 40 can play mask layer effect, the threading dislocation of substrate terminates at the interface between substrate and U2 type GaN layer 40 and is blocked.Present configuration can reduce lattice defect that is adaptive with the lattice of epitaxial layer due to patterned substrate 1 and that cause, promotes epitaxial lateral growth, epitaxy defect density can be reduced to 106cm- 2Below the order of magnitude, improve epitaxial layer quality.
And, the present invention is by the U2 type GaN layer 40 of growth between U1 type GaN layer 3 and N-type GaN layer 4, realize the laterally overgrown in later stage, reduce defect, the most effective stop portions dislocation extends to N-type GaN layer 4 or luminescent layer, and another part dislocation is concentrated on region in U2 type GaN layer 40, improve epitaxial wafer crystal mass, thus increase epitaxial layer low dislocation region, reduce dislocation density, effectively reduce the piezoelectricity and spontaneous polarization caused due to the lattice mismatch of patterned substrate 1 with GaN material existence, and then improve the recombination probability of active area wave function, improve epitaxial wafer brightness.
Embodiment one
The growing method of LED epitaxial structure of the present invention is:
1) device carries out high-temperature baking in MOCVD reacting furnace, removes the residual impurity on patterned substrate 1 surface.
2) slow cooling is between 400-800 DEG C, grows one layer of GaN cushion 2 in patterned substrate 1.
3) being brought rapidly up, at 1000-1200 DEG C, GaN cushion 2 grows U1 type GaN layer 3, grows 5-50min, thickness is 0.5-5um.
4) regrowth U2 type GaN layer 40 in U1 type GaN layer 3:
A) first growing 2D type GaN layer 401, growth temperature is 1050 DEG C, and thickness is 0.05um, growth pressure 100torr；
B) then fast cooling supercharging grows 3D type GaN layer 402, and growth temperature is 990 DEG C, and growth thickness is 0.05um, and growth pressure is 400torr；
C) described U2 type GaN layer 40 growth cycle improving GaN crystal quality is 30 cycles.
5) growth N-type GaN layer 5, growth temperature is at 1000-1200 DEG C, and growth thickness is at 0.5-5um.
6) growth active area:
First In is grownXGa1-XN well layer 5, temperature is 500-900 DEG C, and growth thickness is 3-5nm, growth pressure be 100-500torr, In component be 0 < x < 1.
The GaN barrier layer 6 of the 600-1000 DEG C of growth N-type that be then rapidly heated, growth thickness is 5-15nm, and growth pressure is 100-500torr, described InXGa1-XN well layer 5 grows N-type, and doped chemical is Si, and doping content is 2x1017-2x1018cm- 3。
7) growing P-type Al at 700-900 DEG CxGa1-xN electron barrier layer 7, Al component is 0 < x < 1, and thickness is 50-500 angstrom.
8) last growth P-type GaN layer 8, growth temperature grows at 850-1050 DEG C, and thickness is 2000-10000 angstrom, and the concentration of Mg is 5x1018 ~5x1023cm- 3。
Embodiment two
The growing method of LED epitaxial structure of the present invention is:
1) device carries out high-temperature baking in MOCVD reacting furnace, removes the residual impurity on patterned substrate 1 surface.
2) slow cooling is between 400-800 DEG C, and patterned substrate 1 grows one layer of GaN cushion 2.
3) being brought rapidly up, at 1000-1200 DEG C, GaN cushion 2 grows U1 type GaN layer 3, grows 5-50min, thickness is 0.5-5um.
4) regrowth U2 type GaN layer 40 in U1 type GaN layer 3:
A) first growing 2D type GaN layer 401, growth temperature is 1080 DEG C, and thickness is 0.1um, growth pressure 200torr；
B) then fast cooling supercharging grows 3D type GaN layer 402, and growth temperature is 1020 DEG C, and growth thickness is 0.1um, and growth pressure is 500torr；
C) described U2 type GaN layer 40 growth cycle improving GaN crystal quality is 15 cycles.
5) growth N-type GaN layer 4, growth temperature is at 1000-1200 DEG C, and growth thickness is at 0.5-5um.
6) growth active area:
First In is grownXGa1-XN well layer 5, temperature is 500-900 DEG C, and growth thickness is 3-5nm, growth pressure be 100-500torr, In component be 0 < x < 1.
Then be rapidly heated 600-1000 DEG C of growth N-type GaN barrier layer 6, and growth thickness is 5-15nm, and growth pressure is 100-500torr, described InXGa1-XN well layer 5 grows N-type, and doped chemical is Si, and doping content is 2x1017-2x1018cm- 3。
7) growing P-type Al at 700-900 DEG CxGa1-xN electron barrier layer 7, Al component is 0 < x < 1, and thickness is 50-500 angstrom.
8) growth P-type GaN layer 8, growth temperature grows at 850-1050 DEG C, and thickness is 2000-10000 angstrom, and the concentration of Mg is 5x1018 ~5x1023cm- 3。
Embodiment three
The growing method of LED epitaxial structure of the present invention is:
1) device carries out high-temperature baking in MOCVD reacting furnace, removes the residual impurity on patterned substrate 1 surface.
2) slow cooling is between 400-800 DEG C, grows one layer of GaN cushion 2.
3) being brought rapidly up, between 1000-1200 DEG C, GaN cushion 2 grows U1 type GaN layer 3, grows 5-50min, thickness is 0.5-5um.
4) growth U2 type GaN layer 40:
A) first growth 2D type GaN layer 401 growth temperature is 1110 DEG C, and thickness is 0.5um, growth pressure 300torr；
B) then fast cooling supercharging grows 3D type GaN layer 402, and growth temperature is 1050 DEG C, and growth thickness is 0.5um, and growth pressure is 650torr；
C) the described U2 type GaN layer growth cycle improving GaN crystal quality is 3 cycles.
5) growth N-type GaN layer 4, growth temperature is at 1000-1200 DEG C, and growth thickness is at 0.5-5um.
6) growth active area:
First In is grownXGa1-XN well layer 5, temperature is 500-900 DEG C, and growth thickness is 3-5nm, growth pressure be 100-500torr, In component be 0 < x < 1.
Then be rapidly heated 600-1000 DEG C of growth N-type GaN barrier layer 6, and growth thickness is 5-15nm, and growth pressure is 100-500torr, described InXGa1-XN well layer 5 grows N-type, and doped chemical is Si, and doping content is 2x1017-2x1018cm- 3。
7) growing P-type Al at 700-900 DEG CxGa1-xN electron barrier layer 7, Al component is 0 < x < 1, and thickness is 50-500 angstrom.
8) growth P-type GaN layer 8, growth temperature grows at 850-1050 DEG C, and thickness is 2000-10000 angstrom, and the concentration of Mg is 5x1018 ~5x1023cm- 3。
The above, the only specific embodiment of the present invention, however it is not limited to other embodiments of the present invention, within the technology path principle of all genus present invention, any obvious amendment made, replace or improve, within protection scope of the present invention all should being belonged to.
Claims (4)
1. the LED epitaxial structure improving GaN crystal quality, it includes patterned substrate (1), GaN cushion (2), U-shaped GaN layer, N-type GaN layer (4), InGaN well layer (5), GaN barrier layer (6), electronic barrier layer (7) and p-type GaN layer (8) the most successively, it is characterized in that: described U-shaped GaN layer includes that U1 type GaN layer (3) and U2 type GaN layer (40), described U2 type GaN layer (40) include 2D type GaN layer (401) and 3D type GaN layer (402) of alternating growth from bottom to up.
The LED epitaxial structure improving GaN crystal quality the most according to claim 1, it is characterised in that: described U2 type GaN layer (40) grows in hydrogen nitrogen hybird environment, and growth cycle is 3-30 cycle.
The LED epitaxial structure improving GaN crystal quality the most according to claim 1 and 2, it is characterised in that: 2D type GaN layer (401) in described U2 type GaN layer (40) first grows, then the pattern alternating growth of 3D type GaN layer (402) regrowth.
The LED epitaxial structure improving GaN crystal quality the most according to claim 3, it is characterised in that: the growth temperature of described 2D type GaN layer (401) is 1050-1110 DEG C, and thickness is 0.05-0.5um, growth pressure 100-300torr；3D type GaN(402) growth temperature of layer is 990-1050 DEG C, growth thickness is 0.05-0.5um, and growth pressure is 400-650torr.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108767074A (en) * | 2018-06-22 | 2018-11-06 | 湘能华磊光电股份有限公司 | Improve the LED epitaxial growth methods of bottom crystal quality |
| CN116093226A (en) * | 2023-04-10 | 2023-05-09 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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Application publication date: 20161123 |