CN106154378A - A kind of SiC spherical reflector and the method utilizing this focusing mirror 46.9nm laser - Google Patents
A kind of SiC spherical reflector and the method utilizing this focusing mirror 46.9nm laser Download PDFInfo
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- CN106154378A CN106154378A CN201610782664.7A CN201610782664A CN106154378A CN 106154378 A CN106154378 A CN 106154378A CN 201610782664 A CN201610782664 A CN 201610782664A CN 106154378 A CN106154378 A CN 106154378A
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- spherical reflector
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- reflecting surface
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/10—Mirrors with curved faces
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
- G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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Abstract
A kind of SiC spherical reflector and the method utilizing this focusing mirror 46.9nm laser, relate to the focusing technology of 46.9nm laser in order to solve the various defects using multicoating spherical reflector to focus on 46.9nm laser.The SiC spherical reflector of the present invention uses SiC to make, and reflecting surface is the sphere of depression.The method using above-mentioned focusing mirror 46.9nm laser includes: utilizes ZEMAX software analog focus light path, determines the step of the focal position of SiC spherical reflector；Utilize the He-Ne Lasers regulation light path that wavelength is 632.8nm, further determine that the step of focal position；Make 46.9nm laser light incident to the step of SiC spherical reflector.Above-mentioned SiC spherical reflector need not plated film, and cost of manufacture is low, is difficult to by damage from laser, and the focal beam spot not having interference effect, said method to obtain laser is fully able to meet the requirement of ablator.
Description
Technical field
The present invention relates to the focusing technology of 46.9nm laser.
Background technology
Capillary discharging 46.9nm laser has that output is stable, the advantage of burst length length, be by short wavelength laser with
Matter interaction and carry out the perfect light source of micro-nano technology at material surface.But due to the characteristic that its wavelength is short, material pair
It absorbs serious, it is impossible to focus on traditional transmission mode.The most commonly used multicoating spherical reflector is carried out at present
Low-angle incidence reflection focuses on 46.9nm laser.Multicoating spherical reflector involves great expense, the most easily by 46.9nm
Damage from laser, service life is shorter.And laser can be produced interference fringe by multilayer films interference, focal beam spot, affect laser pair
The ablation effect of material.
Summary of the invention
The invention aims to solve the problems referred to above of prior art, it is proposed that a kind of SiC spherical reflector and profit
Method with this focusing mirror 46.9nm laser.
A kind of SiC spherical reflector of the present invention uses SiC material to make, and its reflecting surface is the sphere of depression.
According to a preferred embodiment of the invention, the radius of curvature of described SiC spherical reflector reflecting surface is 350mm.
According to a preferred embodiment of the invention, a diameter of 26.5mm of described SiC spherical reflector, thickness is 5mm.
The method using above-mentioned SiC spherical reflector to focus on 46.9nm laser includes:
Making 46.9nm laser light incident to the step of the reflecting surface of SiC spherical reflector, angle of incidence is 0 °-10 °.
According to a preferred embodiment of the invention, the 46.9nm laser light incident step to the reflecting surface of SiC spherical reflector is made
Before Zhou, also include utilizing the He-Ne Lasers regulation light path that wavelength is 632.8nm, to determine position and Jiao of SiC spherical reflector
The step of some position.
According to a preferred embodiment of the invention, the He-Ne Lasers regulation light path that wavelength is 632.8nm is being utilized, to determine
Before the position of SiC spherical reflector and the step of focal position, also include utilizing ZEMAX software analog focus light path, determine poly-
The position of SiC spherical reflector and the step of focal position in burnt light path.
According to a preferred embodiment of the invention, the angle of incidence of 46.9nm laser is 7.5 °.
Compared with conventional multicoating spherical reflector, SiC spherical reflector need not plated film, and cost of manufacture is low, no
Easily by damage from laser, interference effect, focal beam spot is not had to be fully able to meet the requirement of ablator to laser.
Accompanying drawing explanation
Fig. 1 is that in embodiment one, YAG:Ce glitters the primary light shape of spot of 46.9nm laser that screen captures；
Fig. 2 is the light spot shape in embodiment one before the focusing of ZEMAX software simulation；
Fig. 3 is the light spot shape in embodiment one after the focusing of ZEMAX software simulation；
Fig. 4 is the structural representation of focused light passages in embodiment three, and in figure, 1 represents SiC spherical reflector, and 2 represent light
Learning translation stage, 3 represent target, and 4 represent x-ray diode, and 5 represent 46.9nm LASER Light Source；
Fig. 5 is that the 46.9nm laser utilizing SiC spherical reflector to focus in embodiment three is at BaF2Target material surface produces
Damage pattern.
Detailed description of the invention
Detailed description of the invention one: combine Fig. 1 to Fig. 3 and present embodiment is described, a kind of SiC sphere described in present embodiment
Reflecting mirror uses SiC material to make, and its reflecting surface is the sphere of depression.
Owing to SiC spherical reflector surface is without plated film, therefore its damage is much smaller than multicoating spheric reflection by laser
The damage of mirror, and reflecting mirror will not be to laser generation interference effect.
Thickness 5mm, diameter 26.5mm SiC blank on polish out the spherical reflecting surface that radius of curvature is 350mm, reflection
The surface roughness in face is less than 3nm, and surface precision PV value is 46.193nm, and root-mean-square rms value is 10.709nm.
According to theoretical modeling, make the 46.9nm laser light incident that laser instrument sends to described SiC spherical reflector, work as angle of incidence
Time in the range of 0-10 °, the hot spot after the reflection of SiC spherical reflector focuses on is sized to meet the requirement of ablation experiments.
In order to determine the shape of 46.9nm laser facula, utilize YAG:Ce to glitter and shield the original hot spot catching this laser,
The light spot image arrived is as shown in Figure 1.It can be seen that the light spot shape approximation of the 46.9nm laser of capillary discharging generation
Combination in multiple loop configuration.Therefore, when ZEMAX analog focus light path, original hot spot is modeled as by 4 donuts
The circular light spot that shape hot spot combines, angle of incidence is set as 7.5 °.Through the light before the focusing of ZEMAX software simulation and after focusing
Shape of spot is the most as shown in Figures 2 and 3.
It is known that hot spot is reduced into long-pending after 7.5 ° of angle of incidence focusing through SiC spherical reflector from Fig. 2 and Fig. 3
1/10000, power density brings up to 10000 times of original hot spot.Therefore, this focused light passages can reach to focus on 46.9nm laser
The purpose of hot spot.
Simulation through ZEMAX software, it was demonstrated that employing above-mentioned SiC spherical reflector focusing mirror 46.9nm laser
Feasibility.
Detailed description of the invention two: present embodiment is to use a kind of SiC spherical reflector described in embodiment one to focus on
The method of 46.9nm laser, the method includes:
Making 46.9nm laser light incident to the step of the reflecting surface of SiC spherical reflector, angle of incidence is 0 °-10 °.
For SiC spherical reflector, the reflectance of 46.9nm laser is become by the angle of incidence of 46.9nm laser with SiC reflecting mirror
Direct ratio, therefore, in order to obtain the focal beam spot of a high power density, should be by angle of incidence for controlling between 0 °-10 °.Consider
Each component size in light path, selects 7.5 ° as optimized incidence.
Detailed description of the invention three: the present embodiment further restriction to method described in embodiment two, present embodiment
In,
First with ZEMAX software analog focus light path, to determine the approximate location of SiC spherical reflector and the big of focus
Causing position, angle of incidence is set as 0 °-10 °, and described focused light passages is as shown in Figure 4；
Owing to the 46.9nm laser facula after focusing on is the least, the regulation to focused light passages needs exactly accurate, so needing
The He-Ne Lasers that wavelength to be utilized is 632.8nm replaces sightless 46.9nm laser to be focused the accurate adjustment of light path, further
Determining position and the focal position of SiC spherical reflector, concrete grammar is, puts according to the focused light passages of ZEMAX software simulation
46.9nm laser instrument and SiC spherical reflector, then make the direction of propagation of He-Ne Lasers and the direction of propagation weight of 46.9nm laser
Closing, He-Ne Lasers focal beam spot position after SiC spherical reflector reflects is as the position of SiC spheric reflection focus；
Open 46.9nm laser instrument so that it is the reflecting surface of the 46.9nm laser light incident sent to SiC spherical reflector, incident
Angle is 0 °-10 °.
In order to verify the feasibility of method that present embodiment provided, carry out following ablation experiments:
Utilize ZEMAX software analog focus light path, the substantially position of approximate location and focus to determine SiC spherical reflector
Putting, angle of incidence is set as 7.5 °；
In vacuum target chamber, build focused light passages according to the analog result of ZEMAX software, the air pressure in vacuum target chamber up to
To 10-6Pa, SiC reflecting mirror and the x-ray diode (XRD) for measuring 46.9nn laser relative energy are each attached to vacuum target
The bottom of room, XRD, for measuring the relative energy of 46.9nm laser, moves translation stage again and target is moved into light path after energy stabilization
Carry out ablation；46.9nn laser is produced by capillary discharging；
The target 3 being used for ablation is fixed on can the optical translation platform 2 of two-dimensional movement, and target moved to He-Ne swash
The position of optical focus, target is the BaF of surfacing2Material, optical translation platform 2 and can be perpendicular to anti-along being parallel to reflection light
Penetrating light both direction to move, the power line of optical translation platform 2 drives the connecting line of power supply to be all connected on the wiring of vacuum target chamber with it
On post, reach the purpose at target chamber outer control target chamber internal optics translation stage 2 two-dimensional movement；
Optical translation platform 2 is utilized accurately to regulate the distance between target and SiC spherical reflector, to determine focal position,
Select the ablation point of target surface, and record optics translation stage 2 and need along light when carrying out the ablation experiments of distance focal point diverse location
The step number that road is moved, for estimating different ablation position and the distance of focus and being convenient for repeating experiment, x-ray diode
XRD4 should be fixed on the position being suitable for after target, it should be noted that XRD is not placed in the focus of SiC spherical reflector 1
Place, prevents focal beam spot power density too high, the gold-plated electrode of damage XRD.
Fig. 5 is that the 46.9nm laser pulse after lower 25 focusing of atomic force microscope is at BaF2The damage that target material surface produces
Pattern.The damage pattern degree of depth is about 190nm, and the focal beam spot that shape is simulated with ZEMAX software is basically identical.Damage pattern is entered
Row is measured, and the area of damage pattern is about the 1/60000 of original facula area.Due to focal beam spot edge power density relatively
Low, fail at BaF2Surface forms the vestige that can detect that, therefore the actual damage pattern measured be dimensioned slightly smaller than ZEMAX
The result of software simulation.Result above shows, utilizes SiC spherical reflector to focus on 46.9nm laser energy with low-angle incidence reflection
Access one be contracted to 1/10000 hot spot, it is thus achieved that higher power density, power density can arrive according to XRD measurement
Data combine facula area and calculate.Therefore, method of the present invention is applicable to relate to 46.9nm laser and material
In the technical field interacted, it it is the method for the focusing 46.9nm laser of an innovation.
Claims (7)
1. a SiC spherical reflector, it is characterised in that this SiC spherical reflector uses SiC material to make, and its reflecting surface is
The sphere of depression.
A kind of SiC spherical reflector the most according to claim 1, it is characterised in that described SiC spherical reflector reflecting surface
Radius of curvature be 350mm.
A kind of SiC spherical reflector the most according to claim 1 and 2, it is characterised in that described SiC spherical reflector
A diameter of 26.5mm, thickness is 5mm.
4. use the method that a kind of SiC spherical reflector described in claim 1 focuses on 46.9nm laser, it is characterised in that should
Method includes:
Making 46.9nm laser light incident to the step of the reflecting surface of SiC spherical reflector, angle of incidence is 0 °-10 °.
Method the most according to claim 4, it is characterised in that make 46.9nm laser light incident to SiC spherical reflector
Before the step of reflecting surface, also include utilizing the He-Ne Lasers regulation light path that wavelength is 632.8nm, to determine SiC spherical reflector
Position and the step of focal position.
Method the most according to claim 5, it is characterised in that utilizing the He-Ne Lasers regulation light that wavelength is 632.8nm
Road, before the step of the position and focal position that determine SiC spherical reflector, also includes utilizing ZEMAX software analog focus light
Road, determines the position of SiC spherical reflector in focused light passages and the step of focal position.
7. according to the method described in claim 4,5 or 6, it is characterised in that the angle of incidence of 46.9nm laser is 7.5 °.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610782664.7A CN106154378A (en) | 2016-08-30 | 2016-08-30 | A kind of SiC spherical reflector and the method utilizing this focusing mirror 46.9nm laser |
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| CN201610782664.7A CN106154378A (en) | 2016-08-30 | 2016-08-30 | A kind of SiC spherical reflector and the method utilizing this focusing mirror 46.9nm laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114460740A (en) * | 2022-01-21 | 2022-05-10 | 华中科技大学 | Single-mirror annular light spot optical system |
Citations (2)
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| CN1192538A (en) * | 1997-01-20 | 1998-09-09 | 日本皮拉工业株式会社 | Specular surface body |
| US20140176926A1 (en) * | 2005-06-29 | 2014-06-26 | Cymer LLC | Euv optics |
-
2016
- 2016-08-30 CN CN201610782664.7A patent/CN106154378A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1192538A (en) * | 1997-01-20 | 1998-09-09 | 日本皮拉工业株式会社 | Specular surface body |
| US20140176926A1 (en) * | 2005-06-29 | 2014-06-26 | Cymer LLC | Euv optics |
Non-Patent Citations (3)
| Title |
|---|
| ROBB P ET AL: "Interferometric measurements of silicon carbide mirrors at liquid helium temperature", 《SPIE》 * |
| 汪苏等: "激光焊接中激光聚焦技术的研究", 《热加工工艺》 * |
| 韩杰才等: "SiC光学反射镜发展现状", 《宇航材料工艺》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114460740A (en) * | 2022-01-21 | 2022-05-10 | 华中科技大学 | Single-mirror annular light spot optical system |
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