CN106129201A - Epitaxial wafer of light emitting diode and preparation method thereof - Google Patents
Epitaxial wafer of light emitting diode and preparation method thereof Download PDFInfo
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- CN106129201A CN106129201A CN201610620080.XA CN201610620080A CN106129201A CN 106129201 A CN106129201 A CN 106129201A CN 201610620080 A CN201610620080 A CN 201610620080A CN 106129201 A CN106129201 A CN 106129201A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 25
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000007423 decrease Effects 0.000 claims description 3
- 238000005265 energy consumption Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000006911 nucleation Effects 0.000 abstract description 2
- 238000010899 nucleation Methods 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an epitaxial wafer of a light emitting diode and a preparation method thereof, belonging to the technical field of photoelectron manufacturing. The epitaxial wafer comprises a substrate, a buffer layer, a nucleating layer, an undoped gallium nitride layer, an N-type layer, an active layer and a P-type layer which are sequentially stacked, wherein the nucleating layer comprises a plurality of layers of N-type Al layers which are stackedxGa1‑xN layers of N type AlxGa1‑xThe doping concentration of the N layer is not changed, and the N-type Al layers are multilayerxGa1‑xThe doping concentration of the N layer is continuously changed along the stacking direction of the epitaxial wafer, and the stacked multiple layers of N-type Al are included through the nucleation layerxGa1‑xN layers, and each layer of N type AlxGa1‑xThe doping concentration of the N layer is not changed, and the N-type Al layers are multilayerxGa1‑xThe doping concentration of the N layer continuously changes along the stacking direction of the epitaxial wafer, so that the current expansion is facilitated, the resistance of the epitaxial wafer is reduced, the forward voltage of the epitaxial wafer is further reduced, the energy consumption and the heat productivity of the LED are reduced, and the service life is prolonged.
Description
Technical field
The present invention relates to optoelectronic fabrication techniques field, particularly to epitaxial wafer and the preparation side thereof of a kind of light emitting diode
Method.
Background technology
LED (Light Emitting Diode, light emitting diode) has that volume is little, life-span length, the advantage such as low in energy consumption, mesh
Before be widely used in automobile signal light, traffic light, display screen and luminaire.
The core texture of LED is epitaxial wafer, and epitaxial wafer includes substrate, cushion, nucleating layer, undoped gallium nitride layer, N-type
Layer, active layer and P-type layer.Nucleating layer is growing undoped gallium nitride layer and can produce that to be parallel to substrate surface inside during N-type layer
Stress and make substrate become recessed, and produce contrary stress make substrate gradually flatten when growing active layer, thus reduce extension
The angularity of sheet.
During realizing the present invention, inventor finds that prior art at least there is problems in that
Cushion, nucleating layer, undoped gallium nitride layer are undoped structure, are unfavorable for current expansion, cause epitaxial wafer
Forward voltage higher, and then cause the energy consumption of LED to increase, caloric value increase, the lost of life.
Summary of the invention
The problem higher in order to solve the forward voltage of epitaxial wafer, embodiments provides a kind of light emitting diode
Epitaxial wafer and preparation method thereof.Described technical scheme is as follows:
On the one hand, embodiments providing the epitaxial wafer of a kind of light emitting diode, described epitaxial wafer includes layer successively
Folded substrate, cushion, nucleating layer, undoped gallium nitride layer, N-type layer, active layer and P-type layer, described nucleating layer includes stacking
Multi-layer n-type AlxGa1-xN shell, wherein, 0≤X≤1, described N-type Al of each layerxGa1-xThe doping content of N shell is constant, N described in multilamellar
Type AlxGa1-xThe doping content of N shell is along the stacked direction consecutive variations of described epitaxial wafer.
Preferably, N-type Al described in multilamellarxGa1-xThe doping content of N shell increases along the stacked direction of described epitaxial wafer.
Further, N-type Al described in multilamellarxGa1-xThe doping content of N shell reduces along the stacked direction of described epitaxial wafer.
Alternatively, N-type Al described in multilamellarxGa1-xAfter the doping content of N shell first increases along the stacked direction of described epitaxial wafer
Reduce.
Preferably, N-type Al described in multilamellarxGa1-xAfter the doping content of N shell first reduces along the stacked direction of described epitaxial wafer
Increase.
Alternatively, described nucleating layer also includes multi-layer n-type GaN layer, described N-type GaN layer and described N-type AlxGa1-xN shell is handed over
For stacking.
Preferably, the thickness of described nucleating layer is more than or equal to 200nm.
On the other hand, the embodiment of the present invention additionally provides the preparation method of a kind of epitaxial wafer, and described preparation method includes:
One substrate is provided；
Epitaxial growth buffer, nucleating layer, undoped gallium nitride layer, N-type layer, active layer and P the most successively
Type layer, described nucleating layer includes multi-layer n-type Al of stackingxGa1-xN shell, wherein, 0≤X≤1, described N-type Al of each layerxGa1-xN shell
Doping content constant, N-type Al described in multilamellarxGa1-xThe doping content of N shell is along the stacked direction consecutive variations of described epitaxial wafer.
Further, described nucleating layer also includes multi-layer n-type GaN layer, described N-type GaN layer and described N-type AlxGa1-xN shell
Alternately laminated.
Preferably, the growth temperature of described nucleating layer is greater than or equal to 1000 DEG C.
The technical scheme that the embodiment of the present invention provides has the benefit that multilamellar N being included stacking by nucleating layer
Type AlxGa1-xN shell, and each layer N-type AlxGa1-xThe doping content of N shell is constant, multi-layer n-type AlxGa1-xThe doping content of N shell is along outward
Prolong the stacked direction consecutive variations of sheet, the beneficially extension of electric current, reduce the resistance of epitaxial wafer, and then just reduce epitaxial wafer
To voltage, reduce energy consumption and the caloric value of LED, increase the service life.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make
Accompanying drawing be briefly described, it should be apparent that, below describe in accompanying drawing be only some embodiments of the present invention, for
From the point of view of those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other according to these accompanying drawings
Accompanying drawing.
Fig. 1 is the structure chart of the epitaxial wafer of a kind of light emitting diode that the embodiment of the present invention provides；
Fig. 2 is the structure chart of a kind of nucleating layer that the embodiment of the present invention provides；
Fig. 3 is the doping content schematic diagram of a kind of nucleating layer that the embodiment of the present invention provides；
Fig. 4 is the doping content schematic diagram of the another kind of nucleating layer that the embodiment of the present invention provides；
Fig. 5 is the doping content schematic diagram of the another kind of nucleating layer that the embodiment of the present invention provides；
Fig. 6 is the doping content schematic diagram of the another kind of nucleating layer that the embodiment of the present invention provides；
Fig. 7 is the structure chart of the another kind of nucleating layer that the embodiment of the present invention provides；
Fig. 8 is the preparation method flow chart of a kind of epitaxial wafer that the embodiment of the present invention provides；
Fig. 9 is the preparation method flow chart of the another kind of epitaxial wafer that the embodiment of the present invention provides.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiments providing the epitaxial wafer of a kind of light emitting diode, Fig. 1 is the one that the embodiment of the present invention provides
The structure chart of the epitaxial wafer of light emitting diode, as it is shown in figure 1, this epitaxial wafer includes the substrate 10 stacked gradually, cushion 20, becomes
Stratum nucleare 30, undoped gallium nitride layer 40, N-type layer 50, active layer 60 and P-type layer 70, Fig. 2 is the one that the embodiment of the present invention provides
The structure chart of nucleating layer, as in figure 2 it is shown, nucleating layer includes multi-layer n-type Al of stackingxGa1-xN shell is (such as N-type Al in Fig. 2xGa1- xN shell 31,32,33,34), wherein, 0≤X≤1, each layer N-type AlxGa1-xThe doping content of N shell is constant, multi-layer n-type AlxGa1-xN
The doping content of layer is along the stacked direction consecutive variations of epitaxial wafer.
The embodiment of the present invention includes multi-layer n-type Al of stacking by nucleating layerxGa1-xN shell, and each layer N-type AlxGa1-xN shell
Doping content constant, multi-layer n-type AlxGa1-xThe doping content of N shell, along the stacked direction consecutive variations of epitaxial wafer, is conducive to electricity
The extension of stream, reduces the resistance of epitaxial wafer, and then the forward voltage of reduction epitaxial wafer, reduces energy consumption and the caloric value of LED, prolong
Long life.
When realizing, substrate 10 can select Sapphire Substrate.
It should be noted that can also select other substrates, such as silicon carbide substrates in other embodiments, the present invention is also
It is not limited.
In one embodiment of the invention, multi-layer n-type AlxGa1-xThe doping content of N shell is in epitaxially grown direction
On be successively incremented by, by control multi-layer n-type AlxGa1-xThe doping content of N shell is graded on epitaxially grown direction, thus
Can successively discharge crystal lattice stress, improve the crystal mass of nucleating layer.
Specifically, Fig. 3 is the doping content schematic diagram of a kind of nucleating layer that the embodiment of the present invention provides, as it is shown on figure 3, figure
N-type Al in 2xGa1-xThe doping content of N shell 31 is C31, N-type AlxGa1-xThe doping content of N shell 32 is C32, N-type AlxGa1-xN
The doping content of layer 33 is C33, N-type AlxGa1-xThe doping content of N shell 34 is C34, 0 ＜ C31＜ C32＜ C33＜ C34。
Fig. 4 is the doping content schematic diagram of the another kind of nucleating layer that the embodiment of the present invention provides, as shown in Figure 4, at this
In bright another embodiment, multi-layer n-type AlxGa1-xThe doping content of N shell can also be successively on epitaxially grown direction
Successively decrease, i.e. C31＞ C32＞ C33＞ C34＞ 0.By controlling multi-layer n-type AlxGa1-xThe doping content of N shell is in epitaxially grown direction
Upper graded, such that it is able to successively discharge crystal lattice stress, improves the crystal mass of nucleating layer.
Additionally, Fig. 5 is the doping content schematic diagram of the another kind of nucleating layer that the embodiment of the present invention provides, as it is shown in figure 5, many
Layer N-type AlxGa1-xThe doping content of N shell can also the most first increase on epitaxially grown direction and subtract afterwards, i.e. 0 ＜ C31＜ C32＜
C33, and C33＞ C34＞ 0.
Fig. 6 is the doping content schematic diagram of the another kind of nucleating layer that the embodiment of the present invention provides, as shown in Figure 6, at this
In bright another embodiment, multi-layer n-type AlxGa1-xThe doping content of N shell can also be successively on epitaxially grown direction
First subtract and increase afterwards, be i.e. C31＞ C32＞ C33＞ 0, and C33＜ C34。
Although it should be noted that the nucleating layer of display includes 4 layers of N-type Al in Fig. 2xGa1-xN shell, in other embodiments
In, N-type AlxGa1-xThe number of plies of N shell can also be more than or less than 4, and the present invention is not limited thereto.
Fig. 7 is the structure chart of the another kind of nucleating layer that the embodiment of the present invention provides, as it is shown in fig. 7, nucleating layer 30 also includes
Multi-layer n-type GaN layer (the N-type GaN layer 35,36,37,38 as in Fig. 7), multi-layer n-type GaN layer and multi-layer n-type AlxGa1-xN shell is handed over
For stacking, the number of plies of multi-layer n-type GaN layer and multi-layer n-type AlxGa1-xThe number of plies of N shell can be identical, by arranging N-type alternately
GaN layer and N-type AlxGa1-xN shell, can reduce the lattice mismatch in epitaxial wafer further, improves crystal mass, and release lattice loses
Join produced stress.
It should be noted that in the nucleating layer 30 shown in Fig. 7, N-type AlxGa1-xThe doping content of N shell is in epitaxial growth
Direction on can be successively to be incremented by, successively successively decrease, the most first increase to subtract afterwards or the most first subtract and increase afterwards.
Alternatively, the thickness of nucleating layer 30 is more than or equal to 200nm, and nucleating layer 30 thickness is the thinnest, outside cannot effectively reducing
Prolonging the stress in sheet, so that epitaxial wafer angularity is relatively big, lattice mismatch is high, reduces the lattice quality of epitaxial wafer.
Preferably, the thickness of nucleating layer 30 is 200nm～500nm, and the blocked up meeting of nucleating layer 30 thickness causes resistance excessive, from
And cause voltage higher.
Preferably, N-type GaN layer and N-type Al in nucleating layer 30xGa1-xThe alternately laminated periodicity of N shell is 3～6.Periodicity
Too small, then the effect discharging stress is extremely limited, it is impossible to fully stress produced by release lattice mismatch；Periodicity is excessive, then
The gross thickness that can cause nucleating layer 30 increases, thus causes nucleating layer 30 resistance to increase, and voltage is higher.
Further, constant according to the gross thickness being kept into stratum nucleare 30, and reduce motive single-storeyed N-type AlxGa1-xN shell and N-type
The method of the thickness of GaN layer increases periodicity, then can be due to motive single-storeyed N-type AlxGa1-xThe thickness of N shell and N-type GaN layer cross thin and
It is difficult to, causes processing cost to rise.
Although it should be noted that N-type GaN layer and N-type Al in the nucleating layer 30 of display in Fig. 7xGa1-xN shell is alternately laminated
Periodicity be 4, in other embodiments, N-type GaN layer and N-type Al in nucleating layer 30xGa1-xThe periodicity that N shell is alternately laminated
For being more than or less than 4, the present invention is not limited thereto.
The embodiment of the present invention additionally provides the preparation method of a kind of epitaxial wafer, and Fig. 8 is the one that the embodiment of the present invention provides
The preparation method flow chart of epitaxial wafer, as shown in Figure 8, this preparation method includes:
S11 a: substrate is provided.
In the present embodiment, select Sapphire Substrate.
S12: epitaxial growth buffer, nucleating layer, undoped gallium nitride layer, N-type layer, active layer and P successively on substrate
Type layer, nucleating layer includes multi-layer n-type Al of stackingxGa1-xN shell, wherein, 0≤X≤1, each layer N-type AlxGa1-xThe doping of N shell is dense
Spend constant, multi-layer n-type AlxGa1-xThe doping content of N shell is along the stacked direction consecutive variations of epitaxial wafer.
The embodiment of the present invention includes multi-layer n-type Al of stacking by nucleating layerxGa1-xN shell, and each layer N-type AlxGa1-xN shell
Doping content constant, multi-layer n-type AlxGa1-xThe doping content of N shell, along the stacked direction consecutive variations of epitaxial wafer, is conducive to electricity
The extension of stream, reduces the resistance of epitaxial wafer, and then the forward voltage of reduction epitaxial wafer, reduces energy consumption and the caloric value of LED, prolong
Long life.
Fig. 9 is the preparation method flow chart of the another kind of epitaxial wafer that the embodiment of the present invention provides, as it is shown in figure 9, this is prepared
Method includes:
S21 a: substrate is provided.
When realizing, Sapphire Substrate can be selected.
It should be noted that can also select other substrates, such as silicon carbide substrates in other embodiments, the present invention is also
It is not limited.
Specifically, can be by Sapphire Substrate at MOCVD (Meta1Organic Chemical Vapor
Deposition, metallo-organic compound chemical gaseous phase deposition) reaction chamber is heated to 1060 DEG C, to blue precious in hydrogen atmosphere
Carry out at the bottom of stone lining making annealing treatment and nitrogen treatment 10 minutes, so that substrate surface to be cleared up.
S22: at substrate Epitaxial growth cushion.
Specifically, during grown buffer layer, controlling temperature is 500～650 DEG C, and pressure is 300～760Torr, V/III mole
Ratio is 500～3000, and the thickness of cushion is 15～30nm.
It should be noted that V/III mol ratio represents the mol ratio of group-v element and group iii elements, such as, if cushion
For GaN, gallium element is 500～3000 with the mol ratio of nitrogen element.
S23: epitaxial growth of nucleation layers on the buffer layer.
When realizing, this nucleating layer can also include multi-layer n-type GaN layer, N-type GaN layer and N-type AlxGa1-xN shell alternating layer
Folded, by arranging N-type GaN layer alternately and N-type AlxGa1-xN shell, can reduce in epitaxial wafer further due to lattice mismatch
The crystal mass caused is poor, stress produced by release lattice mismatch.
Specifically, alternating growth multi-layer n-type Al on the buffer layerxGa1-xN shell and multi-layer n-type GaN layer, multi-layer n-type GaN layer
The number of plies and multi-layer n-type AlxGa1-xThe number of plies of N shell can be identical.
Preferably, N-type GaN layer and N-type Al in nucleating layerxGa1-xThe alternately laminated periodicity of N shell is 3～6.Periodicity mistake
Little, then the effect discharging stress is extremely limited, it is impossible to fully stress produced by release lattice mismatch；Periodicity is excessive, then can
The gross thickness causing nucleating layer increases, thus causes nucleating layer resistance to increase, and voltage is higher.
It should be noted that N-type GaN layer and N-type AlxGa1-xThe thickness of each layer of N shell is unrelated with periodicity.If be kept into
The gross thickness of stratum nucleare is constant, reduces motive single-storeyed N-type AlxGa1-xThe thickness of N shell and N-type GaN layer, then can be due to list to increase periodicity
Layer N-type AlxGa1-xThe thickness of N shell and N-type GaN layer is crossed thin and is difficult to, and causes processing cost to rise.
Wherein, multi-layer n-type AlxGa1-xThe doping content of N shell can successively be incremented by epitaxially grown direction, successively pass
Subtract, the most first increase to subtract afterwards or the most first subtract and increase afterwards.
Alternatively, the growth temperature of nucleating layer be greater than or equal to 1000 DEG C, nucleating layer more than 1000 DEG C at a temperature of give birth to
Long, the quality of crystal is preferable, advantageously reduces lattice mismatch.
Preferably, the growth temperature of nucleating layer is 1000 DEG C～1200 DEG C, and temperature is too high, may damage substrate.
Further, when growing into stratum nucleare, controlling temperature is 1000～1200 DEG C, and pressure is 400～600Torr, V/III
Mol ratio is 300～1000, and the thickness of nucleating layer can be 200～500nm.The thickness of nucleating layer is the thinnest, cannot effectively reduce
Stress in epitaxial wafer, so that epitaxial wafer angularity is relatively big, lattice mismatch is high, reduces the lattice quality of epitaxial wafer；
The thickness of nucleating layer is blocked up, resistance can be caused excessive, thus cause voltage higher.
S24: at nucleating layer Epitaxial growth undoped gallium nitride layer.
Specifically, during growth undoped gallium nitride layer, controlling temperature is 1000～1200 DEG C, and pressure is 30～500Torr,
V/III mol ratio is 300～3000, and the thickness of undoped gallium nitride layer is 50～500nm.
S25: in undoped gallium nitride layer Epitaxial growth N-type layer.
Specifically, during growth N-type layer, controlling temperature is 1000～1200 DEG C, and pressure is 50～760Torr, V/III mole
Ratio is 300～3000, and the thickness of N-type layer is 3um-4um.
S26: at N-type layer Epitaxial growth active layer.
Specifically, during growth active layer, controlling temperature is 720～820 DEG C, and pressure is 200～400Torr, V/III mole
Ratio is 300～5000, and the thickness of active layer is 400～500nm.
S27: in active layer Epitaxial growth P-type layer.
Specifically, during growing P-type layer, controlling temperature is 850～1050 DEG C, and pressure is 100～760Torr, V/III mole
Ratio is 1000～20000, and the thickness of P-type layer is 50～800nm.
Additionally, after P-type layer has grown, first the temperature of reaction chamber can be reduced to 650～850 DEG C, at pure nitrogen gas
Atmosphere makes annealing treatment 5～15min, then the temperature of reaction chamber is down to room temperature, terminate the growth of epitaxial wafer, hereafter can be externally
Prolong sheet be carried out, deposit, other semiconducter process such as photoetching and etching.
Alternatively, gallium source can be trimethyl gallium or triethyl-gallium, and nitrogen source can be highly purified NH3, indium source can be
Trimethyl indium, aluminum source can be trimethyl aluminium, and n-type doping can select silane, p-type doping can select two cyclopentadienyl magnesium.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (10)
1. an epitaxial wafer for light emitting diode, described epitaxial wafer includes the substrate stacked gradually, cushion, nucleating layer, does not mixes
Miscellaneous gallium nitride layer, N-type layer, active layer and P-type layer, it is characterised in that described nucleating layer includes multi-layer n-type Al of stackingxGa1-xN
Layer, wherein, 0≤X≤1, described N-type Al of each layerxGa1-xThe doping content of N shell is constant, N-type Al described in multilamellarxGa1-xMixing of N shell
Miscellaneous concentration is along the stacked direction consecutive variations of described epitaxial wafer.
Epitaxial wafer the most according to claim 1, it is characterised in that N-type Al described in multilamellarxGa1-xThe doping content of N shell is along institute
The stacked direction stating epitaxial wafer increases.
Epitaxial wafer the most according to claim 1, it is characterised in that N-type Al described in multilamellarxGa1-xThe doping content of N shell is along institute
The stacked direction stating epitaxial wafer reduces.
Epitaxial wafer the most according to claim 1, it is characterised in that N-type Al described in multilamellarxGa1-xThe doping content of N shell is along institute
State the stacked direction first increases and then decreases of epitaxial wafer.
Epitaxial wafer the most according to claim 1, it is characterised in that N-type Al described in multilamellarxGa1-xThe doping content of N shell is along institute
State the stacked direction of epitaxial wafer first to reduce and increase afterwards.
6. according to the epitaxial wafer described in any one of Claims 1 to 5, it is characterised in that described nucleating layer also includes multi-layer n-type
GaN layer, described N-type GaN layer and described N-type AlxGa1-xN shell is alternately laminated.
7. according to the epitaxial wafer described in any one of Claims 1 to 5, it is characterised in that the thickness of described nucleating layer more than or etc.
In 200nm.
8. the preparation method of an epitaxial wafer, it is characterised in that described preparation method includes:
One substrate is provided；
Epitaxial growth buffer, nucleating layer, undoped gallium nitride layer, N-type layer, active layer and P-type layer the most successively,
Described nucleating layer includes multi-layer n-type Al of stackingxGa1-xN shell, wherein, 0≤X≤1, described N-type Al of each layerxGa1-xThe doping of N shell
Concentration is constant, N-type Al described in multilamellarxGa1-xThe doping content of N shell is along the stacked direction consecutive variations of described epitaxial wafer.
Preparation method the most according to claim 8, it is characterised in that described nucleating layer also includes multi-layer n-type GaN layer, institute
State N-type GaN layer and described N-type AlxGa1-xN shell is alternately laminated.
Epitaxial wafer the most according to claim 8 or claim 9, it is characterised in that the growth temperature of described nucleating layer is greater than or equal to
1000℃。
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