CN106098858A - A kind of cadmium telluride preparation method of solar battery - Google Patents
A kind of cadmium telluride preparation method of solar battery Download PDFInfo
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- CN106098858A CN106098858A CN201610680785.0A CN201610680785A CN106098858A CN 106098858 A CN106098858 A CN 106098858A CN 201610680785 A CN201610680785 A CN 201610680785A CN 106098858 A CN106098858 A CN 106098858A
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- cadmium
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- solar battery
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 48
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 30
- 230000008021 deposition Effects 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000012528 membrane Substances 0.000 claims abstract description 11
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 238000003475 lamination Methods 0.000 claims abstract description 7
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 56
- 239000002356 single layer Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000012876 topography Methods 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000007944 thiolates Chemical class 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a kind of cadmium telluride preparation method of solar battery, comprise the following steps: (A) provides substrate；(B) transparent conductive oxide film is deposited on the substrate；(C) in transparent conductive oxide film surface deposition two-layer or the cadmium sulphide membrane of multilamellar, during the cadmium sulfide thin film deposition of different layers, different technical parameters is used；(D) on described cadmium sulphide membrane, Cadimium telluride thin film is deposited；(E) described Cadimium telluride thin film is carried out surface process；(F) buffer layer on Cadimium telluride thin film after the treatment；(G) metal back electrode is deposited at described buffer-layer surface；(H) battery after deposition metal back electrode is carried out annealing lamination.The method of the present invention is by dividing bilayer or multilamellar to deposit CdS Window layer, can be in the gross thickness reducing CdS Window layer, density difference also changes film layer surface topography, can effectively reduce the pin hole of film surface, thus improve the performance of cadmium telluride diaphragm solar battery.
Description
Technical field
The present invention relates to photovoltaic solar cell technical field, especially a kind of cadmium telluride preparation method of solar battery.
Background technology
Along with the worsening shortages of the energy, the development and utilization of solar energy is paid attention to by people increasingly.On market bigger to area,
In hgher efficiency, and the demand of the lower novel solar battery of production cost increases day by day.At photovoltaic cell field, cadmium telluride
(CdTe) thin film solar cell because of itself intrinsic material property and he development process, be easy to large area continuous prodution etc.
Advantage, receives significant attention.Cadmium telluride (CdTe) is the material of typical polycrystalline structure, and it has preferable 1.45-1.5eV's
Band gap, and be the semi-conducting material of a kind of direct band gap, absorptance is at 5 × 105cm-1, therefore have only to the thickness of several microns
Material just can prepare high efficiency solaode, be a kind of efficiently, the thin film solar electricity that stable, relative cost is low
Pond.And cadmium telluride (CdTe) film solar battery structure is simple, easily accomplish scale production, be recent domestic too
One of focus of sun energy battery research, especially in field of thin film solar cells.
Cadmium telluride (CdTe) thin-film solar cells is mainly by cadmium sulfide (CdS) and p-type cadmium telluride (CdTe) group of N-shaped
Becoming, the method depositing CdS, CdTe at present mainly has electrochemical deposition method, radio frequency sputtering method, vacuum vapor deposition method, spray pyrolysis
Method, close spaced sublimation method, gas phase transport sedimentation etc..Cadmium telluride diaphragm solar battery film layer prepared by gas phase transport sedimentation
Quality is good, sedimentation rate is high, crystallite dimension is big, utilization rate of raw materials advantages of higher, it is easy to realizes industrialization and produces.
Cadmium sulfide (CdS) as the Window layer of cadmium telluride diaphragm solar battery, in order to reduce photoelectric transformation efficiency QE and
The loss of the density of short circuit current Isc, CdS must be sufficiently thin, but topmost problem be when the thickness of CdS less than 50 ~
The when of 100nm, due to TCO(conductive oxide film) nonuniform deposition on surface, substantial amounts of pin holes(pin can be formed
Hole) and the discontinuity of thin film, cause solar cell properties to reduce.In order to improve the property of cadmium telluride diaphragm solar battery
Can, while reducing CdS thickness, it is necessary to reduce the formation of pin holes.
Summary of the invention
For solving above-mentioned technical problem, it is an object of the present invention to provide a kind of cadmium telluride preparation method of solar battery.
The technical solution used in the present invention is:
A kind of cadmium telluride preparation method of solar battery, comprises the following steps: (A) provides substrate；(B) deposit on the substrate
As the transparent conductive oxide film of electrode before hull cell；(C) two are deposited on described transparent conductive oxide film surface
Layer or the cadmium sulphide membrane of multilamellar, use different technical parameters during the cadmium sulfide thin film deposition of different layers；(D) at described cadmium sulfide
Cadimium telluride thin film is deposited on thin film；(E) described Cadimium telluride thin film is carried out surface process；(F) cadmium telluride after the treatment
Buffer layer on thin film；(G) metal back electrode is deposited at described buffer-layer surface；(H) to the electricity after deposition metal back electrode
Pond carries out annealing lamination.
Wherein, in described step (C), cadmium sulphide membrane uses gas phase conveying method deposition.
Described transparent conductive oxide is ITO, FTO or BZO.
Further, in described step (C), technological parameter includes thermograde, barometric gradient, band gap gradient.
Further, the condition that described step (C) and (D) deposit is pressure 10-1000pa, temperature 100 DEG C-650 DEG C.
Further, the thickness in monolayer of described cadmium sulphide membrane is that the gross thickness of 50-200nm and two-layer or multilamellar is less than
200nm。
Beneficial effects of the present invention:
The method of the present invention is by dividing bilayer or multilamellar to deposit CdS Window layer, due to the temperature of different CdS Window layer
The technological parameters such as degree, pressure, band gap are different, form the CdS Window layer that density is different, mutual tabling between adjacent C dS Window layer
Just can reduce the gross thickness of CdS Window layer, density difference also changes film layer surface topography, highdensity CdS Window layer
Can effectively reduce the pin holes of film surface, thus improve the quality of Window layer, thus improve cadmium telluride diaphragm solar
The performance of battery.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described further.
Fig. 1 is the cadmium telluride solar battery structure schematic diagram of existing monolayer thiolate cadmium Window layer.
Fig. 2 is the cadmium telluride solar battery structure schematic diagram of bilayer cadmium sulfide Window layer of the present invention.
Fig. 3 is the cadmium telluride solar battery structure schematic diagram of multilamellar cadmium sulfide Window layer of the present invention.
Detailed description of the invention
A kind of cadmium telluride preparation method of solar battery of the present invention, including following necessary step:
(A) substrate is provided；
(B) transparent conductive oxide film of electrode before deposition is used as hull cell on the substrate；Wherein, electrically conducting transparent oxygen
Compound is ITO, FTO or BZO.
(C) at described transparent conductive oxide film surface deposition two-layer or the cadmium sulphide membrane CdS of multilamellar, different layers
Different technical parameters is used during cadmium sulfide thin film deposition；This technological parameter includes thermograde, barometric gradient, band gap gradient.
(D) on described cadmium sulphide membrane, Cadimium telluride thin film CdTe is deposited；
(E) described Cadimium telluride thin film is carried out surface process；
(F) buffer layer on Cadimium telluride thin film after the treatment；
(G) metal back electrode is deposited at described buffer-layer surface；
(H) battery after deposition metal back electrode is carried out annealing lamination.
Wherein, in described step (C), cadmium sulphide membrane uses gas phase conveying method deposition.Gas phase transport deposition process mainly mistake
Journey is to put in vacuum chamber by evaporation source material, and vacuum cavity operation pressure is 10pa-1000pa；100-600 DEG C add
Under heat condition, evaporation source is heated, evaporation source distillation become steam, at high temperature (100 DEG C-600 DEG C by carrier gas (He,
Ar, N2 etc.) process that the matter transportation of evaporation is deposited to the substrate surface of uniform temperature (100 DEG C-600 DEG C).
In order to more specifically contrast situation before and after the present invention improves, first introduce the cadmium telluride of monolayer thiolate cadmium Window layer too
Sun can battery structure.As shown in Figure 1: on glass substrate 1, first use the SnO2:F thin film 2(FTO of CVD deposition 800nm),
Transparent front electrode as battery.SnO2:F thin film 2 uses the N-shaped CdS Window layer of gas phase conveying method deposition 50-200nm
3, the condition of deposition is pressure 10-1000pa, temperature 100 DEG C-650 DEG C；Then the p-type CdTe thin film 4 of 1-5um is deposited；To p
The CdTe surface of type carries out processing then buffer layer 5, and face deposition layer of metal back electrode 6, enters battery on the buffer layer
Row annealing lamination.
Introduce the cadmium telluride solar battery structure of bilayer cadmium sulfide Window layer of the present invention again, as shown in Figure 2: first at glass
The SnO2:F thin film 2 of CVD deposition 800nm is used, as the transparent front electrode of battery on glass substrate 1.On SnO2:F thin film 2
Using the N-shaped CdS Window layer 31 of gas phase conveying method deposition 50-200nm, the condition of deposition is pressure 10-1000pa, temperature 100
℃-650℃；The N-shaped CdS Window layer 32 of deposition 50-200nm, the condition of deposition is pressure 10-1000pa, temperature 100 DEG C-650
DEG C, wherein the gross thickness of 31,32 layers be less than 200nm, pressure and temp from the 31st layer to 32 change can be incremented by, successively decrease or
Person is other situations；Then the p-type CdTe thin film 4 of 1-5um is deposited；Processing the CdTe surface of p-type, then deposition is slow
Rush layer 5, on the buffer layer face deposition layer of metal back electrode 6, battery is carried out annealing lamination.
Present invention additionally comprises another embodiment: the cadmium telluride solar battery structure schematic diagram of multilamellar cadmium sulfide Window layer,
As shown in Figure 3: on glass substrate 1, first use the SnO2:F thin film 2 of CVD deposition 800nm, as the transparent front electricity of battery
Pole.SnO2:F thin film 2 uses the N-shaped CdS Window layer 31,32 of gas phase conveying method deposition 50-200nm ... 3n layer, deposition
Condition is pressure 10-1000pa, and the temperature range of deposition is 100 DEG C-650 DEG C, and pressure and temp is permissible from the 31st layer to 3n change
It is incremented by, successively decreases or other situations；Then the p-type CdTe thin film 4 of 1-5um is deposited；The CdTe surface of p-type is being carried out
Process then buffer layer 5, on the buffer layer face deposition layer of metal back electrode 6, battery is carried out annealing lamination.
As it has been described above, the present invention is by dividing bilayer or multilamellar to deposit CdS Window layer, due to different CdS windows
The technological parameters such as the temperature of layer, pressure, band gap are different, form the CdS Window layer that density is different, the CdS Window layer tool that density is little
Having good photoelectric transformation efficiency, the CdS Window layer that density is little meets surface pinholes the most even zero pin hole requirement.Density different and
Between adjacent C dS Window layer, mutual tabling just can reduce the gross thickness of CdS Window layer, and density difference also changes film layer table
Face pattern, highdensity CdS Window layer can effectively reduce the pin holes of film surface, thus improve the quality of Window layer,
Thus improve the performance of cadmium telluride diaphragm solar battery.
The foregoing is only the preferred embodiments of the present invention, the present invention is not limited to above-mentioned embodiment, as long as with
Essentially identical means realize within the technical scheme of the object of the invention broadly falls into protection scope of the present invention.
Claims (6)
1. a cadmium telluride preparation method of solar battery, it is characterised in that comprise the following steps: (A) provides substrate；(B) exist
The transparent conductive oxide film of electrode before deposition is used as hull cell on described substrate；(C) at described transparent conductive oxide
Film surface deposition two-layer or the cadmium sulphide membrane of multilamellar, uses different technical parameters during the cadmium sulfide thin film deposition of different layers；
(D) on described cadmium sulphide membrane, Cadimium telluride thin film is deposited；(E) described Cadimium telluride thin film is carried out surface process；(F) described
Buffer layer on Cadimium telluride thin film after process；(G) metal back electrode is deposited at described buffer-layer surface；(H) to deposition gold
Belong to the battery after back electrode and carry out annealing lamination.
A kind of cadmium telluride preparation method of solar battery the most according to claim 1, it is characterised in that: described step (C)
Middle cadmium sulphide membrane uses gas phase conveying method deposition.
A kind of cadmium telluride preparation method of solar battery the most according to claim 1, it is characterised in that: described electrically conducting transparent
Oxide is ITO, FTO or BZO.
A kind of cadmium telluride preparation method of solar battery the most according to claim 1, it is characterised in that: described step (C)
Middle technological parameter includes thermograde, barometric gradient, band gap gradient.
A kind of cadmium telluride preparation method of solar battery the most according to claim 1, it is characterised in that: described step (C)
The condition deposited with (D) is pressure 10-1000pa, temperature 100 DEG C-650 DEG C.
A kind of cadmium telluride preparation method of solar battery the most according to claim 1, it is characterised in that: described cadmium sulfide is thin
The thickness in monolayer of film is that the gross thickness of 50-200nm and two-layer or multilamellar is less than 200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610680785.0A CN106098858A (en) | 2016-08-17 | 2016-08-17 | A kind of cadmium telluride preparation method of solar battery |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610680785.0A CN106098858A (en) | 2016-08-17 | 2016-08-17 | A kind of cadmium telluride preparation method of solar battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018152731A1 (en) * | 2017-02-23 | 2018-08-30 | 海门黄海创业园服务有限公司 | Cds/cdte solar cell structure |
| CN115274934A (en) * | 2022-08-17 | 2022-11-01 | 济南大学 | Preparation method of light flexible cadmium telluride film and light flexible cadmium telluride substrate |
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|---|---|---|---|---|
| TW201127989A (en) * | 2010-02-12 | 2011-08-16 | Jenn Feng New Energy | A deposition method of a cadmium sulfide film, and the multi-layer cadmium sulfide film |
| CN102299211A (en) * | 2011-09-21 | 2011-12-28 | 上海大学 | Two-step method for manufacturing cadmium sulphide film |
| CN102810581A (en) * | 2011-05-31 | 2012-12-05 | 初星太阳能公司 | Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making |
| CN104377261A (en) * | 2014-10-18 | 2015-02-25 | 中山市创科科研技术服务有限公司 | CdTe thin-film solar cell panel and manufacturing method |
-
2016
- 2016-08-17 CN CN201610680785.0A patent/CN106098858A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201127989A (en) * | 2010-02-12 | 2011-08-16 | Jenn Feng New Energy | A deposition method of a cadmium sulfide film, and the multi-layer cadmium sulfide film |
| CN102810581A (en) * | 2011-05-31 | 2012-12-05 | 初星太阳能公司 | Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making |
| CN102299211A (en) * | 2011-09-21 | 2011-12-28 | 上海大学 | Two-step method for manufacturing cadmium sulphide film |
| CN104377261A (en) * | 2014-10-18 | 2015-02-25 | 中山市创科科研技术服务有限公司 | CdTe thin-film solar cell panel and manufacturing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018152731A1 (en) * | 2017-02-23 | 2018-08-30 | 海门黄海创业园服务有限公司 | Cds/cdte solar cell structure |
| CN115274934A (en) * | 2022-08-17 | 2022-11-01 | 济南大学 | Preparation method of light flexible cadmium telluride film and light flexible cadmium telluride substrate |
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Application publication date: 20161109 |