CN106098820A - A kind of novel antimony selenide thin-film solar cells and preparation method thereof - Google Patents
A kind of novel antimony selenide thin-film solar cells and preparation method thereof Download PDFInfo
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- CN106098820A CN106098820A CN201610699931.4A CN201610699931A CN106098820A CN 106098820 A CN106098820 A CN 106098820A CN 201610699931 A CN201610699931 A CN 201610699931A CN 106098820 A CN106098820 A CN 106098820A
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- antimony selenide
- black phosphorus
- thin film
- phosphorus alkene
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- 239000010409 thin film Substances 0.000 title claims abstract description 67
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- -1 black phosphorus alkene Chemical class 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 11
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 230000009466 transformation Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract description 3
- 239000003574 free electron Substances 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
Abstract
The invention discloses a kind of novel antimony selenide thin-film solar cells and preparation method thereof, it is characterized in that, the structure of described solaode is followed successively by from top to bottom: metal front electrode 1, p-type heavy doping black phosphorus alkene thin film 2, p-type antimony selenide thin film 3, N-shaped black phosphorus alkene substrate 4, metallic back plate 5.It is an advantage of the current invention that not only to take full advantage of antimony selenide film absorption coefficient and relative dielectric constant is big, low to the capture ability in free electron or hole, effectively reduce the recombination losses caused by defect；And make use of the features such as black phosphorus alkene high conductivity, high transmission rate and the highest leakage current modulation rate, decrease the overall series resistance of solaode, substantially increase the photoelectric current of solaode, improve the photoelectric transformation efficiency of solaode.
Description
Technical field
The present invention relates to a kind of novel antimony selenide thin-film solar cells and preparation method thereof, belong to new energy field.
Background technology
Low toxicity that antimony selenide has a potential application foreground as a kind of, cheap, the novel photoelectric of raw material rich reserves turn
Conversion materials, is especially suitable for making thin-film solar cells.Antimony selenide has photoelectricity and the material character of a series of excellence, its forbidden band
Width is 1.0 ~ 1.2eV, is closer to the optimal energy gap of solaode；It belongs to direct band gap material, visible to shortwave
The absorptance of light is big, it is only necessary to incident sunlight just can be fully absorbed by 500nm thin film；And antimony selenide is normal relative to dielectric
Number is relatively big, low to the capture ability in free electron or hole, it is possible to effectively reduce the recombination losses caused by defect；Except this it
Outward, antimony selenide is simple binary compound, the most orthogonal a kind of phase, therefore can keep away in preparation and production
Component and the dephasign of exempting from complexity control a difficult problem.If the antimony selenide solaode that conversion efficiency is higher can be prepared, undoubtedly to energy
Utilization and the environmental conservation aspect in source play an important role.In recent years, the research worker of countries in the world utilized various respectively
The method of sample prepares antimony selenide thin film and device thereof.
Current existing antimony selenide thin-film solar cells is using organic semiconductor and antimony selenide as photoelectric conversion layer, and
Configuring electron transfer layer between negative electrode and photoelectric conversion layer, between photoelectric conversion layer and electron transfer layer, configuration is containing rare earth
Element and/or the thin layer of periodic table of elements group il elements, the photoelectricity of its document report antimony selenide thin-film solar cells turns
Change efficiency and reached 3.7%, and the photoelectric transformation efficiency of antimony selenide thin-film solar cells can reach more than 30% in theory, the brightest
Aobvious antimony selenide material also has huge development potentiality in thin-film solar cell applications field, and people are badly in need of finding a kind of efficiency more
High antimony selenide thin-film solar cells is to promote the development of area of solar cell.
Summary of the invention
In order to improve the photoelectric transformation efficiency of antimony selenide thin-film solar cells further, the invention provides a kind of novel
Antimony selenide thin-film solar cells and preparation method thereof, it is characterised in that the structure of described solaode is the most successively
For: metal front electrode, p-type heavy doping black phosphorus alkene thin film, p-type antimony selenide thin film, N-shaped black phosphorus alkene substrate, metallic back plate.
Described metal front and back electrode is argent electrode or aluminum electrode；The preparation process of described solaode includes following step
Rapid: first, utilize sonochemistry clean N-shaped black phosphorus alkene substrate, utilize the most thereon supersonic spraying or hydrazine solution method or
Magnetron sputtering method depositing p-type antimony selenide thin film, then utilizes chemical vapour deposition technique or mechanical stripping on p-type antimony selenide thin film
Method prepares p-type heavy doping black phosphorus alkene thin film, finally utilizes silk on p-type heavy doping black phosphorus alkene thin film and N-shaped black phosphorus alkene substrate
Net print process or vapour deposition method prepare metal front and back electrode respectively to prepare required novel antimony selenide thin film solar
Battery.It is an advantage of the current invention that not only to take full advantage of this material absorption co-efficient of antimony selenide and relative dielectric constant is big, right
The capture ability in free electron or hole is low, it is possible to effectively reduce the Carrier recombination loss caused by defect；But also utilize
Black phosphorus alkene high conductivity, the feature such as high transmission rate and the highest leakage current modulation rate, decrease the whole of solaode
Body series resistance, substantially increases the photoelectric current of solaode, improves the photoelectric transformation efficiency of solaode.This
The deficiency of conventional conducting materials is greatly overcome, for preparation high efficiency antimony selenide thin film by utilizing black phosphorus alkene to conduct electric current
Solaode provides new approaches.
Accompanying drawing illustrates:
Accompanying drawing 1 is the Rotating fields schematic diagram of a kind of novel antimony selenide thin-film solar cells that the present invention provides.
Drawing reference numeral illustrates:
1 metal front electrode；
2 p-type heavy doping black phosphorus alkene thin film；
3 p-type antimony selenide thin film；
4 N-shaped black phosphorus alkene substrates；
5 metallic back plate.
Detailed description of the invention
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but present invention is not limited only to implement
The content related in example.
The present invention is structure as shown in accompanying drawing, and it includes metal front electrode 1, the p-type heavy doping being sequentially distributed from top to bottom
Black phosphorus alkene thin film 2, p-type antimony selenide thin film 3, N-shaped black phosphorus alkene substrate 4, metallic back plate 5.
Embodiment 1: the preparation method of a kind of novel antimony selenide thin-film solar cells, operates according to following steps:
Use sonochemistry to clean N-shaped black phosphorus alkene substrate, utilize supersonic spraying depositing p-type antimony selenide thin film thereon,
Then chemical vapour deposition technique is utilized to prepare p-type heavy doping black phosphorus alkene thin film on p-type antimony selenide thin film, finally heavily doped in p-type
Utilize silk screen print method to prepare argent electrode respectively on miscellaneous black phosphorus alkene thin film and N-shaped black phosphorus alkene substrate, i.e. prepare required
Novel antimony selenide thin-film solar cells.
Embodiment 2: use sonochemistry to clean N-shaped black phosphorus alkene substrate, utilize hydrazine solution method depositing p-type selenium thereon
Change Sb film, then utilize chemical vapour deposition technique to prepare p-type heavy doping black phosphorus alkene thin film, finally on p-type antimony selenide thin film
P-type heavy doping black phosphorus alkene thin film and N-shaped black phosphorus alkene substrate utilize vapour deposition method to prepare metal aluminium electrode respectively, i.e. prepares institute
The novel antimony selenide thin-film solar cells needed.
Embodiment 3: use sonochemistry to clean N-shaped black phosphorus alkene substrate, utilize magnetron sputtering method depositing p-type thereon
Antimony selenide thin film, then utilizes mechanical stripping method to prepare p-type heavy doping black phosphorus alkene thin film, finally at p on p-type antimony selenide thin film
Silk screen print method is utilized to prepare metal aluminium electrode respectively on type heavy doping black phosphorus alkene thin film and N-shaped black phosphorus alkene substrate, the most prepared
Required novel antimony selenide thin-film solar cells.
Embodiment 4: use sonochemistry to clean N-shaped black phosphorus alkene substrate, utilize supersonic spraying depositing p-type thereon
Antimony selenide thin film, then utilizes mechanical stripping method to prepare p-type heavy doping black phosphorus alkene thin film, finally at p on p-type antimony selenide thin film
Utilize vapour deposition method to prepare argent electrode respectively on type heavy doping black phosphorus alkene thin film and N-shaped black phosphorus alkene substrate, i.e. prepare required
The novel antimony selenide thin-film solar cells wanted.
Embodiment 5: use sonochemistry to clean N-shaped black phosphorus alkene substrate, utilize hydrazine solution method depositing p-type selenium thereon
Change Sb film, then utilize mechanical stripping method to prepare p-type heavy doping black phosphorus alkene thin film, finally in p-type on p-type antimony selenide thin film
Utilize silk screen print method to prepare metal aluminium electrode respectively on heavy doping black phosphorus alkene thin film and N-shaped black phosphorus alkene substrate, i.e. prepare institute
The novel antimony selenide thin-film solar cells needed.
Embodiment 6: use sonochemistry to clean N-shaped black phosphorus alkene substrate, utilize magnetron sputtering method depositing p-type thereon
Antimony selenide thin film, then utilizes chemical vapour deposition technique to prepare p-type heavy doping black phosphorus alkene thin film on p-type antimony selenide thin film,
After utilize silk screen print method to prepare argent electrode respectively, i.e. on p-type heavy doping black phosphorus alkene thin film and N-shaped black phosphorus alkene substrate
Prepare required novel antimony selenide thin-film solar cells.
Claims (2)
1. a novel antimony selenide thin-film solar cells, it is characterised in that the structure of described solaode depends on from top to bottom
Secondary it is: metal front electrode, p-type heavy doping black phosphorus alkene thin film, p-type antimony selenide thin film, N-shaped black phosphorus alkene substrate, metal back side electricity
Pole.
2. the preparation method of a novel antimony selenide thin-film solar cells as claimed in claim 1, it is characterised in that by n
Type black phosphorus alkene substrate uses sonochemistry to clean, and utilizes supersonic spraying or hydrazine solution method or magnetron sputtering method deposition thereon
P-type antimony selenide thin film, then utilizes chemical vapour deposition technique or mechanical stripping method to prepare p-type heavily doped on p-type antimony selenide thin film
Miscellaneous black phosphorus alkene thin film, finally utilizes silk screen print method or evaporation on p-type heavy doping black phosphorus alkene thin film and N-shaped black phosphorus alkene substrate
Method prepares metal front and back electrode respectively, i.e. prepares required novel antimony selenide thin-film solar cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610699931.4A CN106098820B (en) | 2016-08-23 | 2016-08-23 | A kind of new antimony selenide thin-film solar cells and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610699931.4A CN106098820B (en) | 2016-08-23 | 2016-08-23 | A kind of new antimony selenide thin-film solar cells and preparation method thereof |
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| Publication Number | Publication Date |
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| CN106098820A true CN106098820A (en) | 2016-11-09 |
| CN106098820B CN106098820B (en) | 2017-06-16 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898662A (en) * | 2017-03-10 | 2017-06-27 | 河北大学 | A kind of p i N-shapeds antimony selenide solar cell |
| CN107464854A (en) * | 2017-07-26 | 2017-12-12 | 卡姆丹克太阳能（江苏）有限公司 | A kind of SiGe black phosphorus alkene PIN heterojunction solar batteries |
| CN107579123A (en) * | 2017-08-31 | 2018-01-12 | 华中科技大学 | A kind of antimony selenide thin-film solar cells and preparation method thereof |
| CN106920863B (en) * | 2017-03-21 | 2018-05-11 | 华中科技大学 | A kind of back surface processing method of antimony selenide thin-film solar cells |
| CN109244248A (en) * | 2018-10-15 | 2019-01-18 | 湖南师范大学 | A kind of antimony trisulfide solar battery and preparation method thereof using CuI/PbPc film as hole transmission layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090320916A1 (en) * | 2008-05-09 | 2009-12-31 | International Business Machines Corporation | Techniques for Enhancing Performance of Photovoltaic Devices |
| CN105556694A (en) * | 2013-09-25 | 2016-05-04 | 积水化学工业株式会社 | Thin film solar cell, semiconductor thin film and coating liquid for forming semiconductor |
-
2016
- 2016-08-23 CN CN201610699931.4A patent/CN106098820B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090320916A1 (en) * | 2008-05-09 | 2009-12-31 | International Business Machines Corporation | Techniques for Enhancing Performance of Photovoltaic Devices |
| CN105556694A (en) * | 2013-09-25 | 2016-05-04 | 积水化学工业株式会社 | Thin film solar cell, semiconductor thin film and coating liquid for forming semiconductor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898662A (en) * | 2017-03-10 | 2017-06-27 | 河北大学 | A kind of p i N-shapeds antimony selenide solar cell |
| CN106920863B (en) * | 2017-03-21 | 2018-05-11 | 华中科技大学 | A kind of back surface processing method of antimony selenide thin-film solar cells |
| CN107464854A (en) * | 2017-07-26 | 2017-12-12 | 卡姆丹克太阳能（江苏）有限公司 | A kind of SiGe black phosphorus alkene PIN heterojunction solar batteries |
| CN107464854B (en) * | 2017-07-26 | 2019-11-05 | 南通鸿图健康科技有限公司 | A kind of SiGe black phosphorus alkene PIN heterojunction solar battery |
| CN107579123A (en) * | 2017-08-31 | 2018-01-12 | 华中科技大学 | A kind of antimony selenide thin-film solar cells and preparation method thereof |
| CN109244248A (en) * | 2018-10-15 | 2019-01-18 | 湖南师范大学 | A kind of antimony trisulfide solar battery and preparation method thereof using CuI/PbPc film as hole transmission layer |
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| CN106098820B (en) | 2017-06-16 |
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