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CN106053881B - Single-chip silicon integrated three-axis high-frequency-bandwidth high-impact accelerometer and method of making the same - Google Patents

Single-chip silicon integrated three-axis high-frequency-bandwidth high-impact accelerometer and method of making the same Download PDF

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CN106053881B
CN106053881B CN201610703474.1A CN201610703474A CN106053881B CN 106053881 B CN106053881 B CN 106053881B CN 201610703474 A CN201610703474 A CN 201610703474A CN 106053881 B CN106053881 B CN 106053881B
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straightening
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CN106053881A (en
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李昕欣
邹宏硕
王家畴
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0862Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system

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  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
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Abstract

The invention provides a single-chip silicon integrated three-axis high-bandwidth high-impact accelerometer and a manufacturing method thereof. The structure deformation caused by the vertical surface Z-axis acceleration is converted into the tension and compression of the in-surface straightening and compressing beam which is easy to detect by using the combination of the pair of mass blocks, the first straightening and compressing beam, the second straightening and compressing beam, the first connecting plate and the second connecting plate as the Z-axis micro-mechanical sensitive structure unit, so that the problem that the conventional vertical surface Z-axis accelerometer cannot simultaneously obtain high sensitivity and high resonant frequency is solved. The influence of the crystal orientation on anisotropic corrosion, piezoresistive coefficients and the like is comprehensively considered, the structural layout is optimized, and the integration of the three-axis high-bandwidth high-impact accelerometer on the small chip is realized. A set of reliable manufacturing method is provided, so that the accelerometer has the advantages of simple process, low manufacturing cost, small chip size, high structural strength, suitability for batch production and the like.

Description

单芯片硅集成三轴高频宽高冲击加速度计及其制作方法Single-chip silicon integrated three-axis high-frequency-bandwidth high-impact accelerometer and method of making the same

技术领域technical field

本发明属于硅微机械传感器领域,涉及一种单芯片硅集成三轴高频宽高冲击加速度计及其制作方法。The invention belongs to the field of silicon micromechanical sensors, and relates to a single-chip silicon integrated three-axis high-frequency-width-high-impact accelerometer and a manufacturing method thereof.

背景技术Background technique

随着硅基MEMS加工技术的日益成熟,MEMS高g值加速度计凭借其体积小、成本低、性能高和适于量产等优势,目前已广泛应用于汽车碰撞试验、航天导航、军用惯性导航、侵彻弹引信等领域。为真实再现碰撞、起飞、侵侧等过程中的加速度信号细节,尽可能地减小信号失真,高g值加速度计不仅要具备高抗冲击性及足够的灵敏度,还要具备较高的谐振频率及工作带宽。三轴集成高g值加速度计可同时检测同一位置XYZ三轴的加速度信号,可实现加速度矢量信号实时输出,相比于三个检测轴正交的单轴高g加速度计,芯片安装更加简易,信号读取更加准确,制造成本更加低廉。With the increasing maturity of silicon-based MEMS processing technology, MEMS high-g accelerometers have been widely used in automotive crash tests, aerospace navigation, and military inertial navigation due to their advantages of small size, low cost, high performance, and suitability for mass production. , penetrating bomb fuze and other fields. In order to truly reproduce the details of the acceleration signal in the process of collision, take-off, side invasion, etc., and reduce the signal distortion as much as possible, the high-g-value accelerometer must not only have high impact resistance and sufficient sensitivity, but also have a high resonant frequency. and working bandwidth. The three-axis integrated high-g accelerometer can simultaneously detect the acceleration signals of the XYZ three axes at the same position, and can realize the real-time output of the acceleration vector signal. Compared with the single-axis high-g accelerometer whose three detection axes are orthogonal, the chip installation is simpler. The signal reading is more accurate and the manufacturing cost is lower.

目前国内应用较广的悬臂梁式高g值加速度计,多为(100)双抛片双面微机械加工后键合制作而成,这类加速度计有一些明显的缺点:工艺复杂、尺寸较大、成本较高、残余应力大。中科院上海微系统与信息技术研究所高g加速度计研究组通过改进工艺,使用(111)单抛片通过单面微机械加工制造出性能更优的悬臂梁式高g值加速度计,同时具备制造工艺简单、制造成本低廉、芯片尺寸较小、结构强度高等优点。随着该项技术的进步和推广,中科院上海微系统与信息技术研究所高g加速度计研究组研发出基于(111)单抛片单面工艺的三轴悬臂梁式高g值加速度计,在性能高低、制造工艺复杂度、成本高低、芯片尺寸大小、结构强度等指标上,几近做到了悬臂梁式高g值加速度计的极致。然而,由于悬臂梁结构自身的限制,这类加速度计无法同时获得高灵敏度和高谐振频率。At present, the widely used cantilever beam accelerometers with high g value in China are mostly made of (100) double-polished sheets and double-sided micromachining and bonding. This type of accelerometer has some obvious shortcomings: complex process, large size, High cost and large residual stress. The high-g accelerometer research group of the Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, by improving the process, uses (111) single-polish wafers to manufacture a cantilever-type high-g value accelerometer with better performance through single-sided micromachining, and has a simple manufacturing process. , The manufacturing cost is low, the chip size is small, and the structural strength is high. With the advancement and promotion of this technology, the high-g accelerometer research group of the Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences has developed a three-axis cantilever beam high-g accelerometer based on the (111) single-polishing single-sided process. , In terms of manufacturing process complexity, cost, chip size, structural strength and other indicators, it has almost achieved the extreme of cantilever beam high g-value accelerometers. However, due to the limitation of the cantilever structure itself, this type of accelerometer cannot obtain high sensitivity and high resonant frequency at the same time.

改用直拉直压梁作为高g加速度的检测结构,可同时获得高灵敏度及高谐振频率。鉴于此,中科院上海微系统与信息技术研究所高g加速度计研究组研发出了基于(111)单晶硅基底的高谐振频率高冲击加速度计,在不失工艺简单、制造成本低廉、芯片尺寸较小、结构强度高等优势的前提下,在保持较高灵敏度的同时,大大提高了传感器的一阶谐振频率,即大大提高了工作带宽。然而,三边固支板与直拉直压梁的组合结构仅适用于检测硅片表面内二轴(XY轴)的加速度,而垂直硅片表面一轴(Z轴)加速度计目前并不能同时获得高灵敏度及高谐振频率。Using the straight-stretched beam as the high-g acceleration detection structure can obtain high sensitivity and high resonance frequency at the same time. In view of this, the high-g accelerometer research group of the Shanghai Institute of Microsystems and Information Technology of the Chinese Academy of Sciences has developed a high-resonance frequency and high-impact accelerometer based on (111) single crystal silicon substrate, which is simple in process, low in manufacturing cost and chip size. Under the premise of small size and high structural strength, while maintaining high sensitivity, the first-order resonance frequency of the sensor is greatly improved, that is, the working bandwidth is greatly improved. However, the combined structure of the three-sided clamping plate and the straight-straight beam is only suitable for detecting the acceleration of two axes (XY axis) on the surface of the silicon wafer, and the one axis (Z axis) accelerometer perpendicular to the surface of the silicon wafer cannot be used at the same time. Obtain high sensitivity and high resonance frequency.

鉴于此,本发明提出了一种单芯片硅集成三轴高频宽高冲击加速度计及其制作方法。In view of this, the present invention proposes a single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer and a manufacturing method thereof.

发明内容SUMMARY OF THE INVENTION

鉴于以上所述现有技术的缺点,本发明旨在提供一种单芯片硅集成三轴高频宽高冲击加速度计及其制作方法,用以解决垂直硅片表面一轴(Z轴)加速度计目前并不能同时获得高灵敏度及高谐振频率这一瓶颈问题,同时,在不失工艺简单、制造成本低廉、芯片尺寸较小、结构强度高、适于批量生产等优势的前提下,实现高频宽高冲击加速度计的三轴集成。In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a single-chip silicon integrated three-axis high-bandwidth high-impact accelerometer and a manufacturing method thereof, so as to solve the current problem of one-axis (Z-axis) accelerometers perpendicular to the surface of the silicon wafer. The bottleneck problem of high sensitivity and high resonant frequency cannot be obtained at the same time. At the same time, high frequency bandwidth and high impact acceleration can be achieved without losing the advantages of simple process, low manufacturing cost, small chip size, high structural strength, and suitability for mass production. Three-axis integration of the meter.

为实现上述目的及其他相关目的,本发明提供一种单芯片硅集成三轴高频宽高冲击加速度计,所述单芯片硅集成三轴高频宽高冲击加速度计包括:(111)单晶硅基底及Z轴微机械敏感结构单元;其中,所述Z轴微机械敏感结构单元包括:两块平行分布的质量块、第一直拉直压梁、第二直拉直压梁、第一连接板及第二连接板;所述质量块嵌入在所述(111)单晶硅基底内,所述质量块外侧的侧面与所述(111)单晶硅基底之间及所述质量块相邻的侧面之间均设有第一深槽,所述质量块之间通过所述第一连接板相连接,所述质量块的外侧通过所述第二连接板与所述(111)单晶硅基底相连接;所述第一直拉直压梁位于所述两块质量块之间,且所述第一直拉直压梁两端分别与所述两块质量块相连接;所述第二直拉直压梁位于所述两块质量块外侧,且所述第二直拉直压梁横跨所述质量块外侧的所述第一深槽,一端与所述质量块相连接,另一端与所述(111)单晶硅基底相连接。In order to achieve the above object and other related objects, the present invention provides a single-chip silicon integrated three-axis high-frequency high-impact accelerometer, the single-chip silicon integrated three-axis high-frequency high-impact accelerometer includes: (111) a single crystal silicon substrate and Axis micromechanical sensitive structural unit; wherein, the Z-axis micromechanical sensitive structural unit includes: two parallel distributed mass blocks, a first straight-straightening beam, a second straight-straightening beam, a first connecting plate and a second straightening beam Two connecting plates; the mass block is embedded in the (111) single crystal silicon substrate, and the side surface of the outer side of the mass block is between the (111) single crystal silicon substrate and the side surfaces adjacent to the mass block. There is a first deep groove between the mass blocks, the mass blocks are connected through the first connecting plate, and the outer side of the mass block is connected with the (111) single crystal silicon substrate through the second connecting plate ; the first straightening and pressing beam is located between the two mass blocks, and the two ends of the first straightening and pressing beam are respectively connected with the two mass blocks; the second straightening and pressing beam is The compression beam is located outside the two mass blocks, and the second straightening compression beam spans the first deep groove outside the mass blocks, one end is connected with the mass blocks, and the other end is connected with the (111) The single crystal silicon substrate is connected.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的一种优选方案,所述质量块的长度方向与<110>晶向相平行,所述质量块的侧面与<211>晶向相垂直。As a preferred solution of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, the length direction of the mass block is parallel to the <110> crystal orientation, and the side surface of the mass block is parallel to the <211> crystal orientation. vertical.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的一种优选方案,所述第一连接板及所述第二连接板的上表面及下表面均为(111)面。As a preferred solution of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, the upper and lower surfaces of the first connecting plate and the second connecting plate are both (111) planes.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的一种优选方案,所述第一直拉直压梁及所述第二直拉直压梁的数量均为两个,所述第一直拉直压梁及所述第二直拉直压梁的长度方向均为<211>晶向,且所述第一直拉直压梁及所述第二直拉直压梁的长度方向与所述质量块的侧面相垂直。As a preferred solution of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, the number of the first straight-straightening beam and the second straight-straightening beam is two, and the number of the first straightening beam The length directions of the straight-straightening beam and the second straight-straightening beam are both the <211> crystal direction, and the length directions of the first straight-straightening beam and the second straight-straightening beam are perpendicular to the sides of the mass.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的一种优选方案,还包括:X轴微机械敏感结构单元及Y轴微机械敏感结构单元;其中,所述X轴微机械敏感结构单元包括:两块平行间隔分布的第一固支板及第三直拉直压梁;所述第一固支板为矩形板,所述第一固支板位于所述(111)单晶硅基底上表面内的一边为自由边,其余三边固支于所述(111)单晶硅基底内,所述第一固支板的两侧面与所述(111)单晶硅基底之间设有第二深槽;所述第三直拉直压梁对称地分布于所述第一固支板的两侧,且所述第三直拉直压梁横跨所述第二深槽,一端与所述第一固支板相连接,另一端与(111)单晶硅基底相连接;所述Y轴微机械敏感结构单元包括:两块平行间隔分布的第二固支板及第四直拉直压梁;所述第二固支板为矩形板,所述第二固支板的长度方向与所述第一固支板的长度方向相垂直,所述第二固支板位于所述(111)单晶硅基底上表面内的一边为自由边,其余三边固支于所述(111)单晶硅基底内,所述第二固支板的两侧面与所述(111)单晶硅基底之间设有第三深槽;所述第四直拉直压梁对称地分布于所述第二固支板的两侧,且所述第四直拉直压梁横跨所述第三深槽,一端与所述第二固支板相连接,另一端与所述(111)单晶硅基底相连接。As a preferred solution of the single-chip silicon integrated three-axis high-bandwidth high-impact accelerometer of the present invention, it further includes: an X-axis micromechanical sensitive structural unit and a Y-axis micromechanical sensitive structural unit; wherein, the X-axis micromechanical sensitive structure The unit includes: two parallel and spaced first fixing plates and a third straight-straightening beam; the first fixing plate is a rectangular plate, and the first fixing plate is located on the (111) monocrystalline silicon One side of the upper surface of the base is a free edge, and the other three sides are fixed in the (111) single crystal silicon base, and two sides of the first fixed support plate and the (111) single crystal silicon base are arranged between the two sides. There is a second deep groove; the third straightening and pressing beams are symmetrically distributed on both sides of the first fixing plate, and the third straightening and pressing beams cross the second deep groove, and one end It is connected with the first fixing plate, and the other end is connected with the (111) single crystal silicon substrate; the Y-axis micromechanical sensitive structural unit includes: two parallel and spaced apart second fixing plates and a fourth straight Straightening the compression beam; the second fixing plate is a rectangular plate, the length direction of the second fixing plate is perpendicular to the length direction of the first fixing plate, and the second fixing plate is located in the (111) One side of the upper surface of the single crystal silicon substrate is a free side, the other three sides are fixed in the (111) single crystal silicon substrate, and the two sides of the second fixed support plate are connected to the (111) single crystal silicon substrate. A third deep groove is arranged between the crystalline silicon substrates; the fourth straightening beams are symmetrically distributed on both sides of the second clamping plate, and the fourth straightening beams span the One end of the third deep groove is connected with the second retaining plate, and the other end is connected with the (111) single crystal silicon substrate.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的一种优选方案,所述第一固支板及所述第二固支板均为矩形板,且所述第一固支板的侧面及所述第二固支板的侧面与<110>晶向均呈45°夹角。As a preferred solution of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, the first clamping plate and the second clamping plate are both rectangular plates, and the first clamping plate is The side surfaces and the side surfaces of the second retaining plate and the <110> crystal direction all form an included angle of 45°.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的一种优选方案,所述第三直拉直压梁及所述第四直拉直压梁的数量均为四个;四个所述第三直拉直压梁分别两两对称地分布于所述第一固支板的两侧,且呈“一”字分布,所述第三直拉直压梁的长度方向与所述第一固支板的侧面相垂直,且与<110>晶向呈45°夹角;四个所述第四直拉直压梁分别两两对称地分布于所述第二固支板的两侧,且呈“一”字分布,所述第四直拉直压梁的长度方向与所述第二固支板的侧面相垂直,且与<110>晶向呈45°夹角。As a preferred solution of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, the number of the third straight-straightening beam and the fourth straight-straightening beam is four; The third straight-straightening beams are symmetrically distributed on both sides of the first retaining plate, and are distributed in a "one" shape, and the length direction of the third straight-straightening beams is the same as that of the third straightening beam. The side surfaces of a retaining plate are perpendicular to the <110> crystal direction at an angle of 45°; the four fourth straightening beams are symmetrically distributed on both sides of the second retaining plate. , and is distributed in the shape of "one", and the length direction of the fourth straightening beam is perpendicular to the side surface of the second retaining plate, and forms an included angle of 45° with the <110> crystal direction.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的一种优选方案,所述(111)单晶硅基底的上表面、所述质量块的上表面、所述第一直拉直压梁的上表面、所述第二直拉直压梁的上表面、所述第一固支板的自由边、所述第三直拉直压梁的上表面、所述第二固支板的自由边及所述第四直拉直压梁的上表面均位于同一平面内。As a preferred solution of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, (111) the upper surface of the single-crystal silicon substrate, the upper surface of the mass block, the first straightening pressure The upper surface of the beam, the upper surface of the second straightening and pressing beam, the free edge of the first fixing plate, the upper surface of the third straightening and pressing beam, the upper surface of the second fixing plate The free edge and the upper surface of the fourth straightening beam are located in the same plane.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的一种优选方案,还包括力敏电阻,所述力敏电阻通过离子注入方法形成于所述第一直拉直压梁、所述第二直拉直压梁、所述第三直拉直压梁及所述第四直拉直压梁上,所述力敏电阻的长度与所述第一直拉直压梁、所述第二直拉直压梁、所述第三直拉直压梁及所述第四直拉直压梁的长度相同,且各微机械敏感结构单元内的所述力敏电阻互相连接构成惠斯通全桥电路。As a preferred solution of the single-chip silicon integrated triaxial high-bandwidth and high-impact accelerometer of the present invention, it further includes a force-sensitive resistor, which is formed on the first straight-straightening beam, the On the second straightening and pressing beam, the third straightening and pressing beam, and the fourth straightening and pressing beam, the length of the force-sensitive resistor is the same as that of the first straightening and pressing beam, the first straightening and pressing beam, and the fourth straightening and pressing beam. The lengths of the two straight-straightening beams, the third straight-straightening beam, and the fourth straight-straightening beam are the same, and the force-sensitive resistors in each micromechanical-sensitive structural unit are connected to each other to form a Wheatstone full bridge circuit.

本发明还提供一种单芯片硅集成三轴高频宽高冲击加速度计的制作方法,包括以下步骤:The present invention also provides a method for manufacturing a single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer, comprising the following steps:

1)提供一(111)单晶硅基底;1) provide a (111) single crystal silicon substrate;

2)采用离子注入的方法在所述(111)单晶硅基底上制作力敏电阻,然后化学气相沉积氧化硅制作表面钝化保护层;2) using the method of ion implantation to make a force-sensitive resistor on the (111) single crystal silicon substrate, and then chemical vapor deposition of silicon oxide to make a surface passivation protective layer;

3)利用深度反应离子刻蚀工艺在所述(111)单晶硅基底上间隔的制作多个释放窗口,所述释放窗口勾勒出所需的固支板、直拉直压梁和质量块的轮廓;3) Using the deep reactive ion etching process to make a plurality of release windows spaced on the (111) single crystal silicon substrate, the release windows outline the required clamping plates, straightening beams and mass blocks. contour;

4)采用二步深度反应离子刻蚀工艺自所述(111)单晶硅基底背面定义所述质量块的轮廓;4) using a two-step deep reactive ion etching process to define the outline of the mass from the back of the (111) single crystal silicon substrate;

5)在所述释放窗口内化学气相沉积氧化硅作为侧壁钝化保护层;5) chemical vapor deposition of silicon oxide as the sidewall passivation protective layer in the release window;

6)利用反应离子刻蚀工艺去除所述释放窗口底部的所述侧壁钝化保护层,然后再利用硅深度反应离子刻蚀工艺继续向下刻蚀所述释放窗口底部裸露出来的单晶硅,以形成所述固支板、所述质量块、连接板及所述直拉直压梁的释放牺牲间隙;6) Remove the sidewall passivation protection layer at the bottom of the release window by using a reactive ion etching process, and then continue to etch down the exposed monocrystalline silicon at the bottom of the release window by using a silicon deep reactive ion etching process. , so as to form the release sacrifice gap of the fixing plate, the mass block, the connecting plate and the straight-straightening beam;

7)通过所述释放牺牲间隙利用湿法刻蚀工艺横向腐蚀所述(111)单晶硅基底,释放所述直拉直压梁;7) laterally etching the (111) single crystal silicon substrate through the release sacrificial gap using a wet etching process to release the straight-stretched beam;

8)去除所述(111)单晶硅基底表面残余的钝化保护层,制作欧姆接触区域和引线孔;8) removing the residual passivation protective layer on the surface of the (111) single crystal silicon substrate, and making ohmic contact regions and lead holes;

9)在所述(111)单晶硅基底表面制作引线和焊盘。9) Making leads and pads on the surface of the (111) single crystal silicon substrate.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的制作方法的一种优选方案,在步骤2)中,通过向所述(111)单晶硅基底进行硼离子注入的方法制作所述力敏电阻,注入倾斜角度为7°~10°,所述力敏电阻的方块电阻值为85欧姆~92欧姆。As a preferred solution of the manufacturing method of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, in step 2), the method of boron ion implantation into the (111) single-crystal silicon substrate is used to manufacture the For the force-sensitive resistor, the injection inclination angle is 7°˜10°, and the sheet resistance value of the force-sensitive resistor is 85 ohms˜92 ohms.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的制作方法的一种优选方案,在步骤6)中,形成的所述固支板包括第一固支板及第二固支板,所述第一固支板及所述第二固支板的数量均为两块,所述两块第一固支板及所述两块第二固支板分别平行间隔分布,所述第一固支板及所述第二固支板均为矩形板,且所述第一固支板的侧面及所述第二固支板的侧面与<110>晶向均呈45°夹角。As a preferred solution of the manufacturing method of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, in step 6), the formed retaining plate includes a first retaining plate and a second retaining plate, The number of the first fixing plate and the second fixing plate is two, and the two first fixing plates and the two second fixing plates are distributed in parallel and spaced apart, respectively. Both the retaining plate and the second retaining plate are rectangular plates, and the side surfaces of the first retaining plate and the side surface of the second retaining plate and the <110> crystal direction are both at an included angle of 45°.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的制作方法的一种优选方案,在步骤6)中,形成的所述质量块的数量为两块,所述两块质量块平行排布,所述质量块的长度方向与<110>晶向相平行,所述质量块的侧面与<211>晶向相垂直。As a preferred solution of the manufacturing method of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, in step 6), the number of the mass blocks formed is two, and the two mass blocks are arranged in parallel cloth, the length direction of the mass block is parallel to the <110> crystallographic orientation, and the side surface of the mass block is perpendicular to the <211> crystallographic orientation.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的制作方法的一种优选方案,在步骤6)中,形成的所述连接板包括第一连接板及第二连接板;所述第一连接板位于两所述质量块之间,所述第一连接板两端分别与所述两质量块相连接;所述第二连接板位于所述质量块外侧,一端与所述质量块相连接,另一端与所述(111)单晶硅基底相连接。As a preferred solution of the manufacturing method of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, in step 6), the formed connecting board includes a first connecting board and a second connecting board; the first connecting board A connecting plate is located between the two mass blocks, and both ends of the first connecting plate are connected to the two mass blocks respectively; the second connecting plate is located outside the mass blocks, and one end is connected to the mass blocks. connected, and the other end is connected to the (111) single crystal silicon substrate.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的制作方法的一种优选方案,在步骤7)中,释放的所述直拉直压梁包括第一直拉直压梁、第二直拉直压梁、第三直拉直压梁及第四直拉直压梁;所述第一直拉直压梁位于所述两块质量块之间,且所述第一直拉直压梁两端分别与所述两块质量块相连接;所述第二直拉直压梁位于所述两块质量块外侧,且一端与所述质量块相连接,另一端与所述(111)单晶硅基底相连接;所述第三直拉直压梁对称地分布于所述第一固支板的两侧,且一端与所述第一固支板相连接,另一端与(111)单晶硅基底相连接;所述第四直拉直压梁对称地分布于所述第二固支板的两侧,且一端与所述第二固支板相连接,另一端与所述(111)单晶硅基底相连接。As a preferred solution of the manufacturing method of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, in step 7), the released straightening beam includes a first straightening beam, a second straightening beam The straight-straightening beam, the third straight-straightening beam, and the fourth straight-straightening beam; the first straight-straightening beam is located between the two mass blocks, and the first straight-straightening beam is Both ends of the beam are respectively connected with the two mass blocks; the second straight-straightening beam is located outside the two mass blocks, one end is connected with the mass blocks, and the other end is connected with the (111) The monocrystalline silicon substrates are connected to each other; the third straightening and pressing beams are symmetrically distributed on both sides of the first fixing plate, and one end is connected with the first fixing plate, and the other end is connected with (111) The monocrystalline silicon substrate is connected; the fourth straightening beam is symmetrically distributed on both sides of the second fixing plate, and one end is connected with the second fixing plate, and the other end is connected with the ( 111) The single crystal silicon substrate is connected.

作为本发明的单芯片硅集成三轴高频宽高冲击加速度计的制作方法的一种优选方案,所述第一直拉直压梁及所述第二直拉直压梁的数量均为两个,所述第一直拉直压梁及所述第二直拉直压梁的长度方向均为<211>晶向,且所述第一直拉直压梁及所述第二直拉直压梁的长度方向与所述质量块的侧面相垂直;所述第三直拉直压梁及所述第四直拉直压梁的数量均为四个;四个所述第三直拉直压梁分别两两对称地分布于所述第一固支板的两侧,且呈“一”字分布,所述第三直拉直压梁的长度方向与所述第一固支板的侧面相垂直,且与<110>晶向呈45°夹角;四个所述第四直拉直压梁分别两两对称地分布于所述第二固支板的两侧,且呈“一”字分布,所述第四直拉直压梁的长度方向与所述第二固支板的侧面相垂直,且与<110>晶向呈45°夹角。As a preferred solution of the manufacturing method of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention, the number of the first straight-straightening beam and the second straight-straightening beam is two, The length directions of the first straight-straightening beam and the second straight-straightening beam are both the <211> crystal direction, and the first straight-straightening beam and the second straight-straightening beam are The length direction of the beam is perpendicular to the side surface of the mass block; the number of the third straightening beam and the fourth straightening beam is four; four of the third straightening beam They are symmetrically distributed on both sides of the first retaining plate, and are distributed in the shape of "one", and the length direction of the third straightening beam is perpendicular to the side surface of the first retaining plate. , and an angle of 45° with the <110> crystal direction; the four fourth straight-stretching beams are symmetrically distributed on both sides of the second retaining plate, and are distributed in the shape of "one". , the length direction of the fourth straightening beam is perpendicular to the side surface of the second clamping plate, and forms an included angle of 45° with the <110> crystal direction.

如上所述,本发明的单芯片硅集成三轴高频宽高冲击加速度计及其制作方法,具有以下有益效果:1)通过使用一对质量块、第一直拉直压梁、第二直拉直压梁、第一连接板及第二连接板的组合作为Z轴微机械敏感结构单元,将垂直表面一轴(Z轴)加速度引起的结构形变转化为易于检测的表面内直拉直压梁的拉压,解决了目前垂直表面一轴(Z轴)加速计并不能同时获得高灵敏度及高谐振频率这一问题;2)综合考虑晶向对各向异性腐蚀、压阻系数等的影响,通过布局优化,实现了小芯片上三轴高频宽高冲击加速度计的集成;3)提供了一套可靠的制作方法,使该三轴加速度计在具备优异性能的同时还具有工艺简单、制造成本低廉、芯片尺寸较小、结构强度高、适于批量生产等优势。As mentioned above, the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer and its manufacturing method of the present invention have the following beneficial effects: 1) By using a pair of mass blocks, a first straight-straightening pressure beam, and a second straight-straightening beam The combination of the pressure beam, the first connecting plate and the second connecting plate is used as a Z-axis micromechanical sensitive structural unit, which converts the structural deformation caused by the one-axis (Z-axis) acceleration of the vertical surface into an easy-to-detect in-surface straight-straight pressure beam. Pull-compression solves the problem that the current vertical surface one-axis (Z-axis) accelerometer cannot obtain high sensitivity and high resonance frequency at the same time; 2) Comprehensively consider the influence of crystal orientation on anisotropic corrosion, piezoresistive coefficient, etc. The layout optimization realizes the integration of the three-axis high-bandwidth and high-impact accelerometer on a small chip; 3) A set of reliable manufacturing methods are provided, so that the three-axis accelerometer has excellent performance and also has the advantages of simple process, low manufacturing cost, The chip size is small, the structure strength is high, and it is suitable for mass production.

附图说明Description of drawings

图1显示为本发明的单芯片硅集成三轴高频宽高冲击加速度计的三维结构示意图。FIG. 1 is a schematic diagram of the three-dimensional structure of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention.

图2显示为本发明的单芯片硅集成三轴高频宽高冲击加速度计中Z轴微机械敏感结构单元中质量块的纵截面三维结构示意图。FIG. 2 is a schematic diagram of the longitudinal cross-sectional three-dimensional structure of the mass block in the Z-axis micromechanical sensitive structural unit of the single-chip silicon integrated three-axis high-bandwidth high-impact accelerometer of the present invention.

图3显示为本发明的单芯片硅集成三轴高频宽高冲击加速度计中Z轴微机械敏感结构单元中第一直拉直压梁的纵截面三维结构示意图。FIG. 3 is a schematic diagram showing the longitudinal cross-sectional three-dimensional structure of the first straight-straight beam in the Z-axis micromechanical sensitive structural unit in the single-chip silicon integrated three-axis high-bandwidth high-impact accelerometer of the present invention.

图4显示为本发明的单芯片硅集成三轴高频宽高冲击加速度计中X轴微机械敏感结构单元中第一固支板的纵截面三维结构示意图。4 is a schematic diagram showing the longitudinal cross-sectional three-dimensional structure of the first retaining plate in the X-axis micromechanical sensitive structural unit of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention.

图5显示为本发明的单芯片硅集成三轴高频宽高冲击加速度计中Y轴微机械敏感结构单元中第四直拉直压梁的纵截面三维结构示意图。FIG. 5 is a schematic diagram of the longitudinal cross-sectional three-dimensional structure of the fourth straight-straightened compression beam in the Y-axis micromechanical sensitive structural unit in the single-chip silicon integrated three-axis high-bandwidth high-impact accelerometer of the present invention.

图6显示为本发明的单芯片硅集成三轴高频宽高冲击加速度计的背面三维结构示意图。FIG. 6 is a schematic diagram showing the back three-dimensional structure of the single-chip silicon integrated three-axis high-bandwidth high-impact accelerometer of the present invention.

图8至图16显示为本发明的单芯片硅集成三轴高频宽高冲击加速度计的制作方法各步骤的纵截面结构示意图。8 to 16 are schematic diagrams of longitudinal cross-sectional structures of each step of the manufacturing method of the single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer of the present invention.

元件标号说明Component label description

10 (111)单晶硅基底10 (111) single crystal silicon substrate

11 质量块11 mass

12 第一直拉直压梁12 The first straightening pressure beam

13 第二直拉直压梁13 Second straight tension beam

14 第一连接板14 The first connection board

15 第二连接板15 Second connection board

16 第一深槽16 First deep groove

17 第一固支板17 The first retaining plate

18 第三直拉直压梁18 Third straight-pulled compression beam

19 第二深槽19 Second deep groove

20 第二固支板20 Second retaining plate

21 第四直拉直压梁21 Fourth straight tension beam

22 第三深槽22 Third deep groove

23 力敏电阻23 Force sensitive resistor

24 表面钝化层24 Surface passivation layer

241 TEOS二氧化硅241 TEOS Silica

242 热氧化二氧化硅242 Thermal oxide silica

25 释放窗口25 release window

26 背面凹槽26 Rear groove

27 侧壁钝化保护层TEOS二氧化硅27 Sidewall passivation protective layer TEOS silicon dioxide

28 释放牺牲间隙28 Release Sacrificial Gap

29 引线孔29 Lead hole

30 引线30 leads

具体实施方式Detailed ways

以下通过特定的具体实例说明本发明的实施方式,本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用,本说明书中的各项细节也可以基于不同观点与应用,在没有背离本发明的精神下进行各种修饰或改变。The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

请参阅图请参阅图1至图16。需要说明的是,本实施例中所提供的图示仅以示意方式说明本发明的基本构想,虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制,其实际实施时各组件的型态、数量及比例可为一种随意的改变,且其组件布局型态也可能更为复杂。Please refer to Figures 1 to 16. It should be noted that the diagrams provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, although the diagrams only show the components related to the present invention rather than the number, shape and the number of components in actual implementation. For dimension drawing, the type, quantity and proportion of each component can be changed at will in actual implementation, and the component layout may also be more complicated.

实施例一Example 1

请参阅图1至图6,本发明提供一种单芯片硅集成三轴高频宽高冲击加速度计,所述单芯片硅集成三轴高频宽高冲击加速度计包括:(111)单晶硅基底10及Z轴微机械敏感结构单元;其中,所述Z轴微机械敏感结构单元包括:两块平行分布的质量块11、第一直拉直压梁12、第二直拉直压梁13、第一连接板14及第二连接板15;所述质量块11嵌入在所述(111)单晶硅基底10内,所述质量块11外侧的侧面与所述(111)单晶硅基底10之间及所述质量块11相邻的侧面之间均设有第一深槽16,所述质量块11之间通过所述第一连接板14相连接,所述质量块11的外侧通过所述第二连接板15与所述(111)单晶硅基底10相连接;所述第一直拉直压梁12位于所述两块质量块11之间,且所述第一直拉直压梁12横跨所述质量块11之间的所述第一深槽16,所述第一直拉直压梁12两端分别与所述两质量块11相连接;所述第二直拉直压梁13位于所述两块质量块11外侧,且所述第二直拉直压梁13横跨所述质量块11外侧的所述第一深槽16,一端与所述质量块11相连接,另一端与所述(111)单晶硅基底10相连接。Referring to FIGS. 1 to 6 , the present invention provides a single-chip silicon integrated three-axis high-frequency-bandwidth high-impact accelerometer. The single-chip silicon-integrated three-axis high-frequency bandwidth and high-impact accelerometer includes: (111) a single-crystal silicon substrate 10 and Z Axial micromechanical sensitive structural unit; wherein, the Z-axis micromechanical sensitive structural unit includes: two parallel distributed mass blocks 11, a first straightening beam 12, a second straightening beam 13, a first connection plate 14 and the second connecting plate 15; the mass block 11 is embedded in the (111) single crystal silicon substrate 10, and between the side surface of the outer side of the mass block 11 and the (111) single crystal silicon substrate 10 and A first deep groove 16 is provided between the adjacent sides of the mass blocks 11 , the mass blocks 11 are connected by the first connecting plate 14 , and the outer side of the mass blocks 11 is connected by the second connecting plate 14 . The connecting plate 15 is connected to the (111) single crystal silicon substrate 10; the first straightening beam 12 is located between the two mass blocks 11, and the first straightening beam 12 is horizontal. Across the first deep groove 16 between the mass blocks 11 , both ends of the first straightening and pressing beam 12 are respectively connected with the two mass blocks 11 ; the second straightening and pressing beam 13 Located outside the two mass blocks 11, and the second straight-straightening beam 13 spans the first deep groove 16 outside the mass blocks 11, one end is connected with the mass blocks 11, and the other end It is connected to the (111) single crystal silicon substrate 10.

作为示例,所述(111)单晶硅基底10的形状可以根据实际需要进行设定,优选地,本实施例中,所述(111)单晶硅基底10横截面的形状为正方形,所述(111)单晶硅基底10的四条边方均向为<211>和<110>的角分线,即与所述(111)单晶硅基底10的主切边呈45°夹角。As an example, the shape of the (111) single crystal silicon substrate 10 can be set according to actual needs. Preferably, in this embodiment, the cross section of the (111) single crystal silicon substrate 10 has a square shape, and the (111) The four sides of the single crystal silicon substrate 10 are angular bisectors with directions <211> and <110>, that is, an included angle of 45° with the main cut edge of the single crystal silicon substrate 10 (111).

作为示例,所述Z轴微机械敏感结构单元中,所述质量块11可以为但不仅限于长方体;所述质量块11的长度方向与<110>晶向相平行,所述质量块11的侧面与<211>晶向相垂直;所述第一连接板14及所述第二连接板15的上表面及下表面均为(111)面;所述第一直拉直压梁12及所述第二直拉直压梁13的数量均为两个,所述第一直拉直压梁12及所述第二直拉直压梁13的长度方向均为<211>晶向,且所述第一直拉直压梁12及所述第二直拉直压梁13的长度方向与所述质量块11的侧面相垂直。由于所述(111)单晶硅基底10表面纵向压阻系数不随偏转角度改变,将所述第一直拉直压梁12及所述第二直拉直压梁13的长度方向取向为<211>晶向,有利于保证所述质量块11在各向异性湿法腐蚀过程中损耗尽可能小。As an example, in the Z-axis micromechanical sensitive structural unit, the mass block 11 may be, but not limited to, a rectangular parallelepiped; the length direction of the mass block 11 is parallel to the <110> crystal direction, and the side surface of the mass block 11 is parallel to the <110> crystal direction. It is perpendicular to the <211> crystal direction; the upper and lower surfaces of the first connecting plate 14 and the second connecting plate 15 are both (111) planes; the first straightening beam 12 and the The number of the second straightening beams 13 is two, the length directions of the first straightening beams 12 and the second straightening beams 13 are in the <211> crystal direction, and the The length directions of the first straightening beam 12 and the second straightening beam 13 are perpendicular to the side surface of the mass 11 . Since the longitudinal piezoresistive coefficient of the surface of the (111) single crystal silicon substrate 10 does not change with the deflection angle, the longitudinal orientation of the first straight-straightening beam 12 and the second straight-straightening beam 13 is <211 >crystalline orientation, which is beneficial to ensure that the loss of the mass block 11 is as small as possible during the anisotropic wet etching process.

作为示例,所述质量块11的背面轮廓通过硅片背面二步深槽刻蚀形成,两所述质量块11的形状及尺寸完全相同。(质量块并非仅有背面刻蚀形成,正面三个深槽贡献更大)As an example, the profile of the backside of the proof blocks 11 is formed by two-step deep groove etching on the backside of the silicon wafer, and the shapes and sizes of the two proof blocks 11 are exactly the same. (The mass block is not only formed by etching on the backside, and the three deep grooves on the front side contribute more)

作为示例,所述(111)单晶硅基底10的上表面、所述质量块11的上表面、所述第一直拉直压梁12的上表面及所述第二直拉直压梁13的上表面均位于同一平面内。As an example, the upper surface of the (111) single crystal silicon substrate 10 , the upper surface of the proof mass 11 , the upper surface of the first straightening beam 12 and the second straightening beam 13 The upper surfaces are all in the same plane.

作为示例,所述加速度计还包括还包括力敏电阻(未示出),所述力敏电阻通过离子注入方法形成于所述第一直拉直压梁12及所述第二直拉直压梁13上,所述力敏电阻的长度与所述第一直拉直压梁12及所述第二直拉直压梁13的长度相同,且所述力敏电阻互相连接,在Z轴加速度作用下其阻值两增两减,可构成惠斯通全桥检测电路。As an example, the accelerometer further includes a force-sensitive resistor (not shown), and the force-sensitive resistor is formed on the first straight-straightening beam 12 and the second straight-straightening force by an ion implantation method. On the beam 13, the length of the force-sensitive resistor is the same as the length of the first straight-straightening beam 12 and the second straight-straightening beam 13, and the force-sensitive resistors are connected to each other, and the Z-axis acceleration Under the action, its resistance value is increased by two and decreased by two, which can constitute a Wheatstone full-bridge detection circuit.

通过使用一对所述质量块11、所述第一直拉直压梁12、所述第二直拉直压梁13、所述第一连接板14及所述第二连接板15的组合作为Z轴微机械敏感结构单元,在外加垂直表面一轴(即Z轴)加速度时,所述质量块11受惯性力作用趋于沿Z轴位移,但由于所述第一连接板14及所述第二连接板15对每个所述质量块11两侧的限制不对称,两所述质量块11之间有横向的相对运动,所述第一连接板14及所述第二连接板15扭曲,两所述质量块11相邻的两边或者相靠近或者相远离,所述第一直拉直压梁12受拉则所述第二直拉直压梁13受压,所述第一直拉直压梁12受压则所述第二直拉直压梁13受拉,这就将垂直表面一轴(Z轴)加速度引起的结构形变转化为易于检测的表面内直拉直压梁的拉压,解决了目前垂直表面一轴(Z轴)加速计并不能同时获得高灵敏度及高谐振频率这一问题。所述Z轴微机械敏感结构单元的谐振频率主要由所述质量块11、所述第一连接板14及所述第二连接板15的尺寸决定,灵敏度主要由所述第一直拉直压梁12及所述第二直拉直压梁13的尺寸决定,综合考虑工艺可行性以及结构抗冲击性,通过优化尺寸即可同时获得高灵敏度及高谐振频率。By using the combination of a pair of the mass 11, the first straightening beam 12, the second straightening beam 13, the first connecting plate 14 and the second connecting plate 15 as The Z-axis micromechanical sensitive structural unit, when the acceleration of one axis (that is, the Z-axis) on the vertical surface is applied, the mass block 11 tends to be displaced along the Z-axis due to the inertial force, but due to the first connecting plate 14 and the The restriction on both sides of each of the mass blocks 11 by the second connecting plate 15 is asymmetrical, there is a lateral relative movement between the two mass blocks 11, and the first connecting plate 14 and the second connecting plate 15 are twisted , the adjacent two sides of the two mass blocks 11 are either close to each other or away from each other, the first straight-straightening pressure beam 12 is stretched, the second straight-straightening and pressing beam 13 is pressed, and the first straight-straightening pressure beam 13 is pressed. When the straight compressing beam 12 is compressed, the second straight compressing beam 13 is stretched, which converts the structural deformation caused by the acceleration of the vertical surface one axis (Z-axis) into the tension of the straight compressing beam in the surface that can be easily detected. It solves the problem that the current vertical surface one-axis (Z-axis) accelerometer cannot obtain high sensitivity and high resonance frequency at the same time. The resonant frequency of the Z-axis micromechanical sensitive structural unit is mainly determined by the dimensions of the mass block 11 , the first connecting plate 14 and the second connecting plate 15 , and the sensitivity is mainly determined by the first straightening pressure The dimensions of the beam 12 and the second straight-straightening beam 13 are determined, considering the feasibility of the process and the impact resistance of the structure, and by optimizing the dimensions, high sensitivity and high resonant frequency can be obtained at the same time.

作为示例,请继续参阅图1,所述单芯片硅集成三轴高频宽高冲击加速度计还包括:X轴微机械敏感结构单元及Y轴微机械敏感结构单元;其中,所述X轴微机械敏感结构单元包括:两块平行间隔分布的第一固支板17及第三直拉直压梁18;所述第一固支板17为矩形板,所述第一固支板17位于所述(111)单晶硅基底10上表面内的一边为自由边,其余三边固支于所述(111)单晶硅基底10内,所述第一固支板17的两侧面与所述(111)单晶硅基底10之间设有第二深槽19;所述第三直拉直压梁18对称地分布于所述第一固支板17的两侧,且所述第三直拉直压梁18横跨所述第二深槽19,一端与所述第一固支板17相连接,另一端与(111)单晶硅基底10相连接;所述Y轴微机械敏感结构单元包括:两块平行间隔分布的第二固支板20及第四直拉直压梁21;所述第二固支板20为矩形板,所述第二固支板20的长度方向与所述第一固支板17的长度方向相垂直,所述第二固支板20位于所述(111)单晶硅基底10上表面内的一边为自由边,其余三边固支于所述(111)单晶硅基底10内,所述第二固支板20的底边及两侧边为固支边,所述第二固支板20的两侧面与所述(111)单晶硅基底10之间设有第三深槽22;所述第四直拉直压梁21对称地分布于所述第二固支板20的两侧,且所述第四直拉直压梁21横跨所述第三深槽22,一端与所述第二固支板20相连接,另一端与所述(111)单晶硅基底10相连接。As an example, please continue to refer to FIG. 1 , the single-chip silicon integrated three-axis high-bandwidth high-impact accelerometer further includes: an X-axis micromechanical sensitive structural unit and a Y-axis micromechanical sensitive structural unit; wherein the X-axis micromechanical sensitive structural unit The structural unit includes: two parallel and spaced first fixing plates 17 and a third straight-straightening beam 18; the first fixing plate 17 is a rectangular plate, and the first fixing plate 17 is located in the ( 111) One side of the upper surface of the single crystal silicon substrate 10 is a free side, the other three sides are fixed in the (111) single crystal silicon substrate 10, and the two sides of the first fixing plate 17 are connected with the (111) ) A second deep groove 19 is provided between the single crystal silicon substrates 10; the third straight straightening beams 18 are symmetrically distributed on both sides of the first clamping plate 17, and the third straight straightening beams 18 The pressure beam 18 spans the second deep groove 19, one end is connected with the first fixing plate 17, and the other end is connected with the (111) single crystal silicon substrate 10; the Y-axis micromachined sensitive structural unit includes : two parallel and spaced apart second retaining plates 20 and fourth straightening beams 21; the second retaining plate 20 is a rectangular plate, and the length direction of the second retaining plate 20 is the same as the length of the second retaining plate 20. The length direction of a retaining plate 17 is perpendicular to each other, one side of the second retaining plate 20 located in the upper surface of the (111) single crystal silicon substrate 10 is a free edge, and the other three sides are fastened to the (111) In the monocrystalline silicon substrate 10 , the bottom edge and both sides of the second retaining plate 20 are retaining edges, and the two sides of the second retaining plate 20 are between the (111) single crystal silicon substrate 10 A third deep groove 22 is provided; the fourth straightening and pressing beams 21 are symmetrically distributed on both sides of the second fixing plate 20, and the fourth straightening and pressing beams 21 straddle the first One end of the three-deep groove 22 is connected to the second retaining plate 20 , and the other end is connected to the (111) single crystal silicon substrate 10 .

作为示例,所述第一固支板17的形状及尺寸与所述第二固支板20的形状及尺寸完全相同,所述第三直拉直压梁18的形状及尺寸与所述第四直拉直压梁21的形状及尺寸完全相同。As an example, the shape and size of the first fixing plate 17 are exactly the same as the shape and size of the second fixing plate 20 , and the shape and size of the third straightening beam 18 are the same as those of the fourth straightening beam 18 . The shape and size of the straight-stretched compression beam 21 are exactly the same.

作为示例,所述第一固支板17及所述第二固支板20均为矩形板,且所述第一固支板17的侧面及所述第二固支板20的侧面与<110>晶向均呈45°夹角。As an example, the first fixing plate 17 and the second fixing plate 20 are both rectangular plates, and the side surface of the first fixing plate 17 and the side surface of the second fixing plate 20 are equal to <110 >The crystal directions are all at an angle of 45°.

作为示例,所述第三直拉直压梁18及所述第四直拉直压梁21的数量均为四个;四个所述第三直拉直压梁18分别两两对称地分布于所述第一固支板17的两侧,且呈“一”字分布,所述第三直拉直压梁18的长度方向与所述第一固支板17的侧面相垂直,且均为<211>与<110>的角分线,即均与所述(111)单晶硅基底10的主切边呈45°夹角,亦即与<110>晶向呈45°夹角;四个所述第四直拉直压梁21分别两两对称地分布于所述第二固支板20的两侧,且呈“一”字分布,所述第四直拉直压梁21的长度方向与所述第二固支板20的侧面相垂直,且均为<211>与<110>的角分线,即均与所述(111)单晶硅基底10的主切边呈45°夹角,亦即与<110>晶向呈45°夹角。As an example, the number of the third straightening beams 18 and the fourth straightening beams 21 are both four; the four third straightening beams 18 are symmetrically distributed in pairs. The two sides of the first fixing plate 17 are distributed in the shape of "one", and the length direction of the third straightening and pressing beam 18 is perpendicular to the side surface of the first fixing plate 17, and both are The angular bisectors of <211> and <110> are both at an angle of 45° with the main cut edge of the (111) single crystal silicon substrate 10, that is, at an angle of 45° with the <110> crystal direction; four The fourth straightening and pressing beams 21 are symmetrically distributed on both sides of the second fixing plate 20, and are distributed in a "one" shape. The length of the fourth straightening and pressing beams 21 The direction is perpendicular to the side surface of the second retaining plate 20, and both are the angular bisectors of <211> and <110>, that is, they are both at 45° to the main cut edge of the (111) single crystal silicon substrate 10 The included angle is 45° with the <110> crystal direction.

作为示例,所述第一固支板17为通过在所述(111)单晶硅基底10内所述第一固支板17两侧刻蚀所述第二深槽19而获得,所述第二固支板20为通过在所述(111)单晶硅基底10内所述第二固支板20两侧刻蚀所述第三深槽22而获得。As an example, the first retaining plate 17 is obtained by etching the second deep grooves 19 on both sides of the first retaining plate 17 in the (111) single crystal silicon substrate 10 . The two retaining plates 20 are obtained by etching the third deep grooves 22 on both sides of the second retaining plate 20 in the (111) single crystal silicon substrate 10 .

作为示例,所述(111)单晶硅基底10的上表面、所述第一固支板17的自由边、所述第三直拉直压梁18的自由边、所述第二固支板20的自由边及所述第四直拉直压梁21的上表面均位于同一平面内。As an example, the upper surface of the (111) single crystal silicon substrate 10, the free edge of the first retaining plate 17, the free edge of the third straightening beam 18, the second retaining plate The free edge of 20 and the upper surface of the fourth straightening beam 21 are located in the same plane.

作为示例,所述加速度计还包括力敏电阻(未示出),所述力敏电阻通过离子注入方法形成于所述第三直拉直压梁18及所述第四直拉直压梁21上,所述力敏电阻的长度与所述第三直拉直压梁18及所述第四直拉直压梁21的长度相同,且各微机械敏感结构单元内的所述力敏电阻互相连接,构成惠斯通全桥电路,即所述X轴微机械敏感结构单元中的所述第三直拉直压梁18表面的所述力敏电阻相互连接,在X轴加速度的作用下其阻值两增两减,可构成惠斯通全桥检测电路,所述Y轴微机械敏感结构单元中的所述第四质量拉直压梁21表面的所述力敏电阻相互连接,在Y轴加速度的作用下其阻值两增两减,可构成惠斯通全桥检测电路。As an example, the accelerometer further includes a force-sensitive resistor (not shown), and the force-sensitive resistor is formed on the third straightening beam 18 and the fourth straightening beam 21 by ion implantation. Above, the length of the force-sensitive resistor is the same as the length of the third straightening beam 18 and the fourth straightening and pressing beam 21, and the force-sensitive resistors in each micromechanical sensitive structural unit are mutually connected to form a Wheatstone full-bridge circuit, that is, the force-sensitive resistors on the surface of the third straight-straightening beam 18 in the X-axis micromechanical sensitive structural unit are connected to each other, and under the action of the X-axis acceleration Two increases and two decreases in resistance value can constitute a Wheatstone full bridge detection circuit. The force-sensitive resistors on the surface of the fourth mass-straightening beam 21 in the Y-axis micromechanical sensitive structural unit are connected to each other. Under the action of the shaft acceleration, its resistance value increases and decreases twice, which can constitute a Wheatstone full-bridge detection circuit.

作为示例,所述单芯片硅集成三轴高频宽高冲击加速度计通过单面加工工艺,将所述X轴微机械敏感结构单元、所述Y轴微机械敏感结构单元及所述Z轴微机械敏感结构单元集成于所述(111)单晶硅基底10内;所述Z轴微机械敏感结构单元位于所述(111)单晶硅基底10的正中心,所述X轴微机械敏感结构单元及所述Y轴微机械敏感结构单元分别位于所述(111)单晶硅基底10的四边,且与所述(111)单晶硅基底10的边缘留有足够的距离,以保证在外加X轴加速度或Y轴加速度时,除了所述X轴微机械敏感结构单元或所述Y轴微机械敏感结构单元之外的其他部分的形变可忽略。As an example, the single-chip silicon-integrated three-axis high-bandwidth high-impact accelerometer is processed by a single-sided process, and the X-axis micromechanical sensitive structural unit, the Y-axis micromechanical sensitive structural unit, and the Z-axis micromechanical sensitive structural unit are The structural unit is integrated in the (111) single-crystal silicon substrate 10; the Z-axis micro-machine-sensitive structural unit is located in the center of the (111) single-crystal silicon substrate 10, and the X-axis micro-machine sensitive structural unit and The Y-axis micromechanical sensitive structural units are respectively located on the four sides of the (111) single crystal silicon substrate 10, and leave enough distance from the edge of the (111) single crystal silicon substrate 10 to ensure that the X-axis is added During acceleration or Y-axis acceleration, the deformation of other parts except the X-axis micromachine-sensitive structural unit or the Y-axis micromachine-sensitive structural unit can be ignored.

以X轴微机械敏感结构单元为例,在外加X轴向加速度的作用下,所述第一固支板17在自身惯性力作用下挠曲,其非固支边的位移会使得所述第三直拉直压梁18一拉一压,使得相应所述第三直拉直压梁18上的所述力敏电阻的阻值两增两减,构成惠斯通全桥检测电路。Y轴微机械敏感结构单元的工作原理与X轴微机械敏感结构单元的工作原理相似。所述X轴微机械敏感结构单元的一阶谐振频率主要由所述第一固支板17的尺寸决定,灵敏度主要由所述第三直拉直压梁18的尺寸决定;所述Y轴微机械敏感结构单元的一阶谐振频率主要由所述第二固支板20的尺寸决定,灵敏度主要由所述第四直拉直压梁21的尺寸决定,综合考虑工艺可行性以及结构抗冲击性,通过优化尺寸,可同时获得高灵敏度及高谐振频率。Taking the X-axis micromechanical sensitive structural unit as an example, under the action of the X-axis acceleration, the first clamp plate 17 is deflected under the action of its own inertial force, and the displacement of its non-clamped edge will make the third clamp plate 17 bend. The straightening and pressing beams 18 are pulled and pressed one by one, so that the resistance of the force-sensitive resistors on the corresponding third straightening and pressing beams 18 increases and decreases twice, forming a Wheatstone full-bridge detection circuit. The working principle of the Y-axis MEMS-sensitive structural unit is similar to that of the X-axis MEMS-sensitive structural unit. The first-order resonance frequency of the X-axis micro-mechanical sensitive structural unit is mainly determined by the size of the first clamping plate 17, and the sensitivity is mainly determined by the size of the third straightening beam 18; The first-order resonant frequency of the mechanically sensitive structural unit is mainly determined by the size of the second clamping plate 20, and the sensitivity is mainly determined by the size of the fourth straight-straightened compression beam 21, considering the feasibility of the process and the impact resistance of the structure. , by optimizing the size, high sensitivity and high resonant frequency can be obtained at the same time.

实施例二Embodiment 2

请参阅图7至图16,本发明还提供一种单芯片硅集成三轴高频宽高冲击加速度计的制作方法,适于制作如实施例一中所述的单芯片硅集成三轴高频宽高冲击加速度计;请结合实施例一中的图1至图6,以量程为10万g、一阶谐振频率为1.5MHz、灵敏度为0.5μV/g的单芯片硅集成三轴高频宽高冲击加速度计为例,X轴微机械敏感结构单元中的第三直拉直压梁及Y轴微机械敏感结构单元中的第四直拉直压梁的长度方向取向均为<211>与<110>的角分线,所述第三直拉直压梁及所述第四直拉直压梁的长度均为20微米、宽度均为3微米、厚度均为3微米;X轴微机械敏感结构单元中的第一固支板及所述Y轴微机械敏感结构单元中的第二固支板的长度均为720微米、宽度均为250微米、厚度均为30微米;Referring to FIGS. 7 to 16 , the present invention also provides a method for manufacturing a single-chip silicon integrated triaxial high-frequency-bandwidth high-impact accelerometer, which is suitable for manufacturing the single-chip silicon-integrated triaxial high-frequency-bandwidth high-impact accelerometer as described in the first embodiment. Please refer to Figure 1 to Figure 6 in Example 1, take a single-chip silicon integrated triaxial high-frequency-bandwidth high-impact accelerometer with a range of 100,000 g, a first-order resonance frequency of 1.5 MHz, and a sensitivity of 0.5 μV/g as an example , the lengthwise orientations of the third straight-straightening beam in the X-axis MEMS-sensitive structural unit and the fourth straight-straightening beam in the Y-axis MEMS-sensitive structural unit are both angular minutes of <211> and <110> Line, the length of the third straight-straightening beam and the fourth straight-straightening beam are both 20 microns, the width is 3 microns, and the thickness is 3 microns; A retaining plate and the second retaining plate in the Y-axis micromechanical sensitive structural unit are both 720 microns in length, 250 microns in width, and 30 microns in thickness;

请参阅图7至图16,以量程为10万g、一阶谐振频率为1.5MHz、灵敏度为0.5μV/g的单芯片硅集成三轴高频宽高冲击加速度计为例,所述单芯片硅集成三轴高频宽高冲击加速度计的制作方法至少包括以下步骤:Please refer to Fig. 7 to Fig. 16, taking a single-chip silicon integrated triaxial high-frequency, high-width, high-shock accelerometer with a range of 100,000 g, a first-order resonance frequency of 1.5 MHz, and a sensitivity of 0.5 μV/g as an example. The manufacturing method of a three-axis high-bandwidth high-impact accelerometer includes at least the following steps:

1)提供一(111)单晶硅基底10,如图8所示;需要说明的是,执行步骤2)之前,需要先将所述(111)单晶硅基底10进行热氧化处理;1) Provide a (111) single crystal silicon substrate 10, as shown in FIG. 8; it should be noted that, before performing step 2), the (111) single crystal silicon substrate 10 needs to be thermally oxidized;

2)制作热氧化二氧化硅242,采用硼离子注入的方法在所述(111)单晶硅基底10正面注入硼离子并主扩后制作力敏电阻23,注入倾斜角度为7°~10°,所述力敏电阻23的方块电阻值为85欧姆~92欧姆;然后采用化学气相沉积工艺制作TEOS二氧化硅241作为表面钝化保护层24,如图9所示;2) Making thermal oxide silicon dioxide 242, using boron ion implantation method to implant boron ions on the front side of the single crystal silicon substrate 10 and making the force-sensitive resistor 23 after main expansion, and the implantation inclination angle is 7°~10° , the sheet resistance value of the force-sensitive resistor 23 is 85 ohms to 92 ohms; then a chemical vapor deposition process is used to make TEOS silicon dioxide 241 as the surface passivation protection layer 24, as shown in FIG. 9 ;

3)利用深度反应离子刻蚀工艺在所述(111)单晶硅基底10上间隔的制作多个释放窗口25,所述释放窗口25勾勒出所需的固支板、直拉直压梁和质量块的轮廓,如图10所示;3) A plurality of release windows 25 are produced at intervals on the (111) single crystal silicon substrate 10 by using a deep reactive ion etching process, and the release windows 25 outline the required retaining plates, straightening beams and The outline of the mass block, as shown in Figure 10;

4)采用二步深度反应离子刻蚀工艺自所述(111)单晶硅基底10背面定义所述质量块的轮廓,如图11所示;4) using a two-step deep reactive ion etching process to define the outline of the mass from the back of the (111) single crystal silicon substrate 10, as shown in FIG. 11 ;

5)在所述释放窗25口内化学气相沉积氧化硅作为侧壁钝化保护层27,所述侧壁钝化保护层27优选为TEOS二氧化硅,如图12所示;5) chemical vapor deposition of silicon oxide is used as the sidewall passivation protective layer 27 in the opening of the release window 25, and the sidewall passivation protective layer 27 is preferably TEOS silicon dioxide, as shown in Figure 12;

6)利用反应离子刻蚀工艺去除所述释放窗口25底部的所述侧壁钝化保护层27,然后再利用硅深度反应离子刻蚀工艺继续向下刻蚀所述释放窗口25底部裸露出来的单晶硅,以形成所述固支板、所述质量块11、连接板及所述直拉直压梁的释放牺牲间隙28,如图13所示;请结合实施例一,形成的所述固支板包括第一固支板及第二固支板,所述第一固支板及所述第二固支板位于所述(111)单晶硅基底10的四边,且与所述(111)单晶硅基底10的边缘留有足够的距离;所述第一固支板及所述第二固支板的数量均为两块,所述两块第一固支板及所述两块第二固支板分别平行间隔分布,所述第一固支板及所述第二固支板均为矩形板,且所述第一固支板的侧面及所述第二固支板的侧面与<110>晶向均呈45°夹角;形成的所述质量块11位于所述(111)单晶硅基底10的正中心,所述质量块11的数量为两块,所述两块质量块11平行排布,所述质量块11的长度方向与<110>晶向相平行,所述质量块的侧面与<211>晶向相垂直;形成的所述连接板包括第一连接板14及第二连接板15;所述第一连接板14位于两所述质量块11之间,所述第一连接板14的两端分别与两所述质量块11相连接,即所述第一连接板14的一端与一所述质量块11相连接,另一端与另一所述质量块11相连接;所述第二连接板15位于所述质量块11外侧,一端与所述质量块11相连接,另一端与所述(111)单晶硅基底10相连接,所述第一连接板14及所述第二连接板15的上表面及下表面均为(111)面;所述第一固支板及所述第二固支板的长度均为720微米、宽度均为250微米、厚度均为30微米;所述质量块的长度为1200微米、宽度为250微米,厚度为430微米;所述第一连接板14及所述第二连接板15的厚度为80微米;6) Remove the sidewall passivation protection layer 27 at the bottom of the release window 25 using a reactive ion etching process, and then continue to etch down the exposed bottom of the release window 25 by using a silicon deep reactive ion etching process. single crystal silicon to form the retaining plate, the mass block 11, the connecting plate and the release sacrificial gap 28 of the straightening beam, as shown in Figure 13; The retaining plate includes a first retaining plate and a second retaining plate, and the first retaining plate and the second retaining plate are located on the four sides of the (111) single crystal silicon substrate 10, and are connected with the (111) monocrystalline silicon substrate. 111) A sufficient distance is left between the edges of the monocrystalline silicon substrate 10; the number of the first retaining plate and the second retaining plate is two, and the two first retaining plates and the two A second fixing plate is distributed in parallel and spaced apart, the first fixing plate and the second fixing plate are both rectangular plates, and the side surfaces of the first fixing plate and the second fixing plate are The sides and the <110> crystal direction are all at an angle of 45°; the formed mass block 11 is located in the center of the (111) single crystal silicon substrate 10, and the number of the mass blocks 11 is two, and the two The mass blocks 11 are arranged in parallel, the length direction of the mass blocks 11 is parallel to the <110> crystallographic direction, and the side surfaces of the mass blocks are perpendicular to the <211> crystallographic direction; the formed connecting plate includes a first connection plate 14 and second connecting plate 15; the first connecting plate 14 is located between the two mass blocks 11, and the two ends of the first connecting plate 14 are respectively connected with the two mass blocks 11, that is, the One end of the first connecting plate 14 is connected with one of the mass blocks 11, and the other end is connected with the other mass block 11; the second connecting plate 15 is located outside the mass block 11, and one end is connected with the mass The block 11 is connected, and the other end is connected to the (111) single crystal silicon substrate 10, and the upper and lower surfaces of the first connecting plate 14 and the second connecting plate 15 are both (111) surfaces; The length of the first retaining plate and the second retaining plate are both 720 microns, the width is 250 microns, and the thickness is 30 microns; the length of the mass block is 1200 microns, the width is 250 microns, and the thickness is 430 microns; the thickness of the first connecting plate 14 and the second connecting plate 15 is 80 microns;

7)通过所述释放牺牲间隙28利用KOH溶液或TMAH(TetramethylammoniumHydroxide,四甲基氢氧化铵)溶液沿<110>晶向横向腐蚀所述(111)单晶硅基底10,释放所述直拉直压梁,如图14所示;优选地,本实施例中,使用TMAH溶液沿<110>晶向横向腐蚀所述(111)单晶硅基底10,腐蚀时间约为10分钟。在结构释放过程中,由于所述直拉直压梁要腐蚀释放的结构尺寸特别小,横向释放时间比较短,又所述直拉直压梁的下表面为(111)晶面,横向释放时所述直拉直压梁下表面腐蚀速率接近于0,横向释放时所述直拉直压梁下表面基本保持原貌,释放过程中所述直拉直压梁的截面始终保持为矩形,使得所述直拉直压梁各方向的尺寸可精确控制,所述直拉直压梁的制造成品率高。请结合实施例一,释放的所述直拉直压梁包括第一直拉直压梁、第二直拉直压梁、第三直拉直压梁及第四直拉直压梁;所述第一直拉直压梁位于所述两块质量块之间,且所述第一直拉直压梁两端分别与所述两块质量块相连接;所述第二直拉直压梁位于所述两块质量块外侧,且一端与所述质量块相连接,另一端与所述(111)单晶硅基底相连接;所述第三直拉直压梁对称地分布于所述第一固支板的两侧,且一端与所述第一固支板相连接,另一端与(111)单晶硅基底相连接;所述第四直拉直压梁对称地分布于所述第二固支板的两侧,且一端与所述第二固支板相连接,另一端与所述(111)单晶硅基底相连接;所述第一直拉直压梁及所述第二直拉直压梁的数量均为两个,所述第一直拉直压梁及所述第二直拉直压梁的长度方向均为<211>晶向,且所述第一直拉直压梁及所述第二直拉直压梁的长度方向与所述质量块的侧面相垂直;所述第三直拉直压梁及所述第四直拉直压梁的数量均为四个;四个所述第三直拉直压梁分别两两对称地分布于所述第一固支板的两侧,且呈“一”字分布,所述第三直拉直压梁的长度方向与所述第一固支板的侧面相垂直,且与<110>晶向呈45°夹角;四个所述第四直拉直压梁分别两两对称地分布于所述第二固支板的两侧,且呈“一”字分布,所述第四直拉直压梁的长度方向与所述第二固支板的侧面相垂直,且与<110>晶向呈45°夹角;所述第一直拉直压梁及所述第二直拉直压梁的长度均为20微米、宽度均为3微米、厚度均位3微米;所述第三直拉直压梁及所述第四直拉直压梁的长度均为20微米、宽度均为3微米、厚度均为3微米;7) Using KOH solution or TMAH (TetramethylammoniumHydroxide, tetramethylammonium hydroxide) solution to laterally etch the (111) single crystal silicon substrate 10 along the <110> crystal direction through the release sacrificial gap 28 to release the straight straightening The pressure beam is as shown in FIG. 14 ; preferably, in this embodiment, the (111) single crystal silicon substrate 10 is etched laterally along the <110> crystal direction using a TMAH solution, and the etching time is about 10 minutes. During the structural release process, because the size of the structure to be corroded and released by the straight-straightening beam is particularly small, the lateral release time is relatively short, and the lower surface of the straight-straightening beam is the (111) crystal plane. The corrosion rate of the lower surface of the straight-stretched compressive beam is close to 0, and the lower surface of the straight-stretched compressive beam basically maintains its original appearance when it is released laterally. The dimensions of the straight-stretched compressing beam in all directions can be precisely controlled, and the manufacturing yield of the straight-stretched compressive beam is high. Please refer to the first embodiment, the released straight-straightening beam includes a first straight-straightening beam, a second straight-straightening beam, a third straight-straightening beam, and a fourth straight-straightening beam; the The first straight-straightening beam is located between the two mass blocks, and both ends of the first straight-straightening beam are respectively connected with the two mass blocks; the second straight-straightening beam is located between the two mass blocks. The two mass blocks are outside, and one end is connected with the mass block, and the other end is connected with the (111) single crystal silicon substrate; the third straightening beam is symmetrically distributed on the first Both sides of the fixing plate, one end is connected with the first fixing plate, and the other end is connected with the (111) single crystal silicon substrate; the fourth straightening and pressing beams are symmetrically distributed on the second Both sides of the fixing plate, one end is connected with the second fixing plate, and the other end is connected with the (111) single crystal silicon substrate; the first straightening beam and the second straightening beam The number of straightening and pressing beams is two, and the length directions of the first straightening and pressing beams and the second straightening and pressing beams are both in the <211> crystal direction, and the first straightening and pressing beams are in the <211> crystal direction. The length direction of the beam and the second straight-straightening beam is perpendicular to the side surface of the mass block; the number of the third straight-straightening beam and the fourth straight-straightening beam is four; The four third straight-straightening beams are symmetrically distributed on both sides of the first retaining plate, and are distributed in the shape of "one". The side surfaces of the first retaining plate are perpendicular to each other, and form an included angle of 45° with the <110> crystal direction; the four fourth straightening beams are symmetrically distributed on the second retaining plate, respectively The two sides of the second straightening beam are distributed in the shape of "one", and the length direction of the fourth straightening beam is perpendicular to the side surface of the second retaining plate, and is at an angle of 45° with the <110> crystal direction; The length of the first straight-straightening beam and the second straight-straightening beam are both 20 microns, the width is 3 microns, and the thickness is 3 microns; the third straight-straightening beam and the The length of the fourth straight-straightening beam is 20 microns, the width is 3 microns, and the thickness is 3 microns;

8)去除所述(111)单晶硅基底10表面残余的钝化保护层,制作欧姆接触区域(未示出)和引线孔29,如图15所示;8) Remove the residual passivation protective layer on the surface of the (111) single crystal silicon substrate 10, and make an ohmic contact region (not shown) and a lead hole 29, as shown in FIG. 15;

9)在所述(111)单晶硅基底10正面溅射铝薄膜,光刻引线30和焊盘;腐蚀所述引线30并合金化,如图16所示。9) Sputtering an aluminum film on the front surface of the (111) single crystal silicon substrate 10, photolithography the lead 30 and the pad; etching the lead 30 and alloying, as shown in FIG. 16 .

综上所述,本发明提供一种单芯片硅集成三轴高频宽高冲击加速度计及其制作方法,所述单芯片硅集成三轴高频宽高冲击加速度计包括:(111)单晶硅基底及Z轴微机械敏感结构单元;其中,所述Z轴微机械敏感结构单元包括:两块平行分布的质量块、第一直拉直压梁、第二直拉直压梁、第一连接板及第二连接板;所述质量块嵌入在所述(111)单晶硅基底内,所述质量块外侧的侧面与所述(111)单晶硅基底之间及所述质量块相邻的侧面之间均设有第一深槽,所述质量块之间通过所述第一连接板相连接,所述质量块的外侧通过所述第二连接板与所述(111)单晶硅基底相连接;所述第一直拉直压梁位于所述两块质量块之间,且所述第一直拉直压梁横跨所述质量块之间的所述第一深槽,所述第一直拉直压梁两端分别与所述两块质量块相连接;所述第二直拉直压梁位于所述两块质量块外侧,且所述第二直拉直压梁横跨所述质量块外侧的所述第一深槽,一端与所述质量块相连接,另一端与所述(111)单晶硅基底相连接。本发明通过使用一对质量块、第一直拉直压梁、第二直拉直压梁、第一连接板及第二连接板的组合作为Z轴微机械敏感结构单元,将垂直表面一轴(Z轴)加速度引起的结构形变转化为易于检测的表面内直拉直压梁的拉压,解决了目前垂直表面一轴(Z轴)加速计并不能同时获得高灵敏度及高谐振频率这一问题;综合考虑晶向对各向异性腐蚀、压阻系数等的影响,通过布局优化,实现了小芯片上三轴高频宽高冲击加速度计的集成;提供了一套可靠的制作方法,使该三轴加速度计在具备优异性能的同时还具有工艺简单、制造成本低廉、芯片尺寸较小、结构强度高、适于批量生产等优势。To sum up, the present invention provides a single-chip silicon integrated three-axis high-frequency-bandwidth high-impact accelerometer and a manufacturing method thereof. The single-chip silicon-integrated three-axis high-frequency-bandwidth high-impact accelerometer comprises: (111) a single crystal silicon substrate and Axis micromechanical sensitive structural unit; wherein, the Z-axis micromechanical sensitive structural unit includes: two parallel distributed mass blocks, a first straight-straightening beam, a second straight-straightening beam, a first connecting plate and a second straightening beam Two connecting plates; the mass block is embedded in the (111) single crystal silicon substrate, and the side surface of the outer side of the mass block is between the (111) single crystal silicon substrate and the side surfaces adjacent to the mass block. There is a first deep groove between the mass blocks, the mass blocks are connected through the first connecting plate, and the outer side of the mass block is connected with the (111) single crystal silicon substrate through the second connecting plate ; The first straightening and pressing beam is located between the two mass blocks, and the first straightening and pressing beam spans the first deep groove between the mass blocks, and the first straightening and pressing beam Both ends of the straight-straightening beam are respectively connected with the two mass blocks; the second straight-straightening beam is located outside the two mass-blocks, and the second straight-straightening beam spans the One end of the first deep groove outside the mass block is connected with the mass block, and the other end is connected with the (111) single crystal silicon substrate. The present invention uses the combination of a pair of mass blocks, the first straight-straightening beam, the second straight-straightening beam, the first connecting plate and the second connecting plate as the Z-axis micromechanical sensitive structural unit, so that the vertical surface is one axis. The structural deformation caused by (Z-axis) acceleration is converted into the tension and compression of the straight-straight beam in the surface that is easy to detect, which solves the problem that the current vertical surface one-axis (Z-axis) accelerometer cannot obtain high sensitivity and high resonant frequency at the same time. Considering the influence of crystal orientation on anisotropic corrosion, piezoresistive coefficient, etc., the integration of three-axis high-frequency, high-bandwidth and high-impact accelerometers on a small chip is realized through layout optimization; a reliable manufacturing method is provided to make the three Axial accelerometers have the advantages of simple process, low manufacturing cost, small chip size, high structural strength, and suitability for mass production while having excellent performance.

上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed in the present invention should still be covered by the claims of the present invention.

Claims (16)

1.一种单芯片硅集成三轴高频宽高冲击加速度计,其特征在于,包括:(111)单晶硅基底及Z轴微机械敏感结构单元;其中,1. A single-chip silicon integrated three-axis high-frequency-width high-impact accelerometer is characterized in that, comprising: (111) a monocrystalline silicon substrate and a Z-axis micromechanical sensitive structural unit; wherein, 所述Z轴微机械敏感结构单元包括:两块平行分布的质量块、第一直拉直压梁、第二直拉直压梁、第一连接板及第二连接板;所述质量块嵌入在所述(111)单晶硅基底内,所述质量块外侧的侧面与所述(111)单晶硅基底之间及所述质量块相邻的侧面之间均设有第一深槽,所述质量块之间通过所述第一连接板相连接,所述质量块的外侧通过所述第二连接板与所述(111)单晶硅基底相连接;所述第一直拉直压梁位于所述两块质量块之间,且所述第一直拉直压梁横跨所述质量块之间的所述第一深槽,所述第一直拉直压梁两端分别与所述两块质量块相连接;所述第二直拉直压梁位于所述两块质量块外侧,且所述第二直拉直压梁横跨所述质量块外侧的所述第一深槽,一端与所述质量块相连接,另一端与所述(111)单晶硅基底相连接。The Z-axis micromechanical sensitive structural unit includes: two parallel distributed mass blocks, a first straight-straightening beam, a second straight-straightening beam, a first connecting plate and a second connecting plate; the mass blocks are embedded in the In the (111) single crystal silicon substrate, a first deep groove is provided between the lateral side of the mass block and the (111) single crystal silicon substrate and between the adjacent lateral sides of the mass block, The mass blocks are connected through the first connecting plate, and the outer side of the mass block is connected with the (111) single crystal silicon substrate through the second connecting plate; the first straightening pressure The beam is located between the two mass blocks, and the first straightening and pressing beam spans the first deep groove between the mass blocks, and the two ends of the first straightening and pressing beam are respectively connected with each other. The two mass blocks are connected; the second straight-straightening beam is located outside the two mass-blocks, and the second straight-straightening beam spans the first depth outside the mass-block One end of the groove is connected with the mass block, and the other end is connected with the (111) single crystal silicon substrate. 2.根据权利要求1所述的单芯片硅集成三轴高频宽高冲击加速度计,其特征在于:所述质量块的长度方向与<110>晶向相平行,所述质量块的侧面与<211>晶向相垂直。2 . The single-chip silicon integrated triaxial high-frequency-bandwidth high-impact accelerometer according to claim 1 , wherein the length direction of the mass block is parallel to the <110> crystal direction, and the side surface of the mass block is parallel to the <211> crystal direction. 3 . >The crystallographic phase is vertical. 3.根据权利要求1所述的单芯片硅集成三轴高频宽高冲击加速度计,其特征在于:所述第一连接板及所述第二连接板的上表面及下表面均为(111)面。3 . The single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer according to claim 1 , wherein the upper surface and the lower surface of the first connecting plate and the second connecting plate are both (111) planes. 4 . . 4.根据权利要求1所述的单芯片硅集成三轴高频宽高冲击加速度计,其特征在于:所述第一直拉直压梁及所述第二直拉直压梁的数量均为两个,所述第一直拉直压梁及所述第二直拉直压梁的长度方向均为<211>晶向,且所述第一直拉直压梁及所述第二直拉直压梁的长度方向与所述质量块的侧面相垂直。4 . The single-chip silicon-integrated triaxial high-frequency-bandwidth high-impact accelerometer according to claim 1 , wherein the number of the first straight-straightening beam and the second straight-straightening beam is two. 5 . , the length directions of the first straight-straightening beam and the second straight-straightening beam are both the <211> crystal direction, and the first straight-straightening beam and the second straight-straightening beam The length direction of the beam is perpendicular to the side surface of the mass. 5.根据权利要求1至4中任一项所述的单芯片硅集成三轴高频宽高冲击加速度计,其特征在于:还包括:X轴微机械敏感结构单元及Y轴微机械敏感结构单元;其中,5. The single-chip silicon-integrated three-axis high-frequency-bandwidth high-impact accelerometer according to any one of claims 1 to 4, further comprising: an X-axis micromechanical sensitive structural unit and a Y-axis micromechanical sensitive structural unit; in, 所述X轴微机械敏感结构单元包括:两块平行间隔分布的第一固支板及第三直拉直压梁;所述第一固支板为矩形板,所述第一固支板位于所述(111)单晶硅基底上表面内的一边为自由边,其余三边固支于所述(111)单晶硅基底内,所述第一固支板的两侧面与所述(111)单晶硅基底之间设有第二深槽;所述第三直拉直压梁对称地分布于所述第一固支板的两侧,且所述第三直拉直压梁横跨所述第二深槽,一端与所述第一固支板相连接,另一端与(111)单晶硅基底相连接;The X-axis micromechanical sensitive structural unit includes: two parallel and spaced apart first retaining plates and a third straight-straightening beam; the first retaining plate is a rectangular plate, and the first retaining plate is located in the One side of the upper surface of the (111) single crystal silicon substrate is a free side, and the other three sides are fixed in the (111) single crystal silicon substrate, and the two sides of the first fixing plate are connected to the (111) ) A second deep groove is arranged between the single crystal silicon substrates; the third straightening beams are symmetrically distributed on both sides of the first retaining plate, and the third straightening beams span One end of the second deep groove is connected with the first retaining plate, and the other end is connected with the (111) single crystal silicon substrate; 所述Y轴微机械敏感结构单元包括:两块平行间隔分布的第二固支板及第四直拉直压梁;所述第二固支板为矩形板,所述第二固支板的长度方向与所述第一固支板的长度方向相垂直,所述第二固支板位于所述(111)单晶硅基底上表面内的一边为自由边,其余三边固支于所述(111)单晶硅基底内,所述第二固支板的两侧面与所述(111)单晶硅基底之间设有第三深槽;所述第四直拉直压梁对称地分布于所述第二固支板的两侧,且所述第四直拉直压梁横跨所述第三深槽,一端与所述第二固支板相连接,另一端与所述(111)单晶硅基底相连接。The Y-axis micromechanical sensitive structural unit includes: two parallel and spaced apart second retaining plates and a fourth straight-straightening beam; the second retaining plate is a rectangular plate, and the second retaining plate is a rectangular plate. The length direction is perpendicular to the length direction of the first fixing plate, one side of the second fixing plate located in the upper surface of the (111) single crystal silicon substrate is a free edge, and the other three sides are fixed on the (111) In the single crystal silicon substrate, a third deep groove is provided between two sides of the second retaining plate and the (111) single crystal silicon substrate; the fourth straightening beams are symmetrically distributed On both sides of the second fixing plate, and the fourth straight-stretching beam spans the third deep groove, one end is connected with the second fixing plate, and the other end is connected with the (111) ) on a single crystal silicon substrate. 6.根据权利要求5所述的单芯片硅集成三轴高频宽高冲击加速度计,其特征在于:所述第一固支板及所述第二固支板均为矩形板,且所述第一固支板的侧面及所述第二固支板的侧面与<110>晶向均呈45°夹角。6 . The single-chip silicon-integrated triaxial high-bandwidth high-impact accelerometer according to claim 5 , wherein the first clamping plate and the second clamping plate are both rectangular plates, and the first clamping plate and the first clamping plate are both rectangular plates. 7 . The side surface of the clamping plate and the side surface of the second clamping plate and the <110> crystal direction both form an included angle of 45°. 7.根据权利要求5所述的单芯片硅集成三轴高频宽高冲击加速度计,其特征在于:所述第三直拉直压梁及所述第四直拉直压梁的数量均为四个;四个所述第三直拉直压梁分别两两对称地分布于所述第一固支板的两侧,且呈“一”字分布,所述第三直拉直压梁的长度方向与所述第一固支板的侧面相垂直,且与<110>晶向呈45°夹角;四个所述第四直拉直压梁分别两两对称地分布于所述第二固支板的两侧,且呈“一”字分布,所述第四直拉直压梁的长度方向与所述第二固支板的侧面相垂直,且与<110>晶向呈45°夹角。7 . The single-chip silicon-integrated triaxial high-frequency-bandwidth high-impact accelerometer according to claim 5 , wherein the number of the third straight-straightening beam and the fourth straight-straightening beam is four. 8 . ; Four described third straight-straightening compressing beams are symmetrically distributed on both sides of the first fixing plate, respectively, and are distributed in the word "one", and the length direction of the third straight-straighting compressing beams is It is perpendicular to the side of the first clamping plate, and forms an included angle of 45° with the <110> crystal direction; the four fourth straight-straightening beams are symmetrically distributed on the second clamping plate. The two sides of the plate are distributed in the shape of "one". The length direction of the fourth straightening beam is perpendicular to the side surface of the second clamping plate, and is at an angle of 45° with the <110> crystal direction. . 8.根据权利要求5所述的单芯片硅集成三轴高频宽高冲击加速度计,其特征在于:所述(111)单晶硅基底的上表面、所述质量块的上表面、所述第一直拉直压梁的上表面、所述第二直拉直压梁的上表面、所述第一固支板的自由边、所述第三直拉直压梁的上表面、所述第二固支板的自由边及所述第四直拉直压梁的上表面均位于同一平面内。8 . The single-chip silicon-integrated triaxial high-bandwidth high-impact accelerometer according to claim 5 , wherein: the upper surface of the (111) single-crystal silicon substrate, the upper surface of the mass block, the first The upper surface of the straightening beam, the upper surface of the second straightening beam, the free edge of the first retaining plate, the upper surface of the third straightening beam, the second The free edge of the fixing plate and the upper surface of the fourth straightening beam are located in the same plane. 9.根据权利要求5所述的单芯片硅集成三轴高频宽高冲击加速度计,其特征在于:还包括力敏电阻,所述力敏电阻通过离子注入方法形成于所述第一直拉直压梁、所述第二直拉直压梁、所述第三直拉直压梁及所述第四直拉直压梁上,所述力敏电阻的长度与所述第一直拉直压梁、所述第二直拉直压梁、所述第三直拉直压梁及所述第四直拉直压梁的长度相同,且各微机械敏感结构单元内的所述力敏电阻互相连接构成惠斯通全桥电路。9 . The single-chip silicon-integrated triaxial high-bandwidth high-impact accelerometer according to claim 5 , further comprising a force-sensitive resistor, and the force-sensitive resistor is formed on the first straightening pressure by an ion implantation method. 10 . On the beam, the second straightening and pressing beam, the third straightening and pressing beam, and the fourth straightening and pressing beam, the length of the force-sensitive resistor is the same as that of the first straightening and pressing beam. , The lengths of the second straightening beam, the third straightening beam and the fourth straightening beam are the same, and the force-sensitive resistors in each micromechanical sensitive structural unit are connected to each other A Wheatstone full bridge circuit is formed. 10.一种单芯片硅集成三轴高频宽高冲击加速度计的制作方法,其特征在于:包括以下步骤:10. A method for manufacturing a single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer, characterized in that it comprises the following steps: 1)提供一(111)单晶硅基底;1) provide a (111) single crystal silicon substrate; 2)采用离子注入的方法在所述(111)单晶硅基底上制作力敏电阻,然后化学气相沉积氧化硅制作表面钝化保护层;2) using the method of ion implantation to make a force-sensitive resistor on the (111) single crystal silicon substrate, and then chemical vapor deposition of silicon oxide to make a surface passivation protective layer; 3)利用深度反应离子刻蚀工艺在所述(111)单晶硅基底上间隔的制作多个释放窗口,所述释放窗口勾勒出所需的固支板、直拉直压梁和质量块的轮廓;3) Using the deep reactive ion etching process to make a plurality of release windows spaced on the (111) single crystal silicon substrate, the release windows outline the required clamping plates, straightening beams and mass blocks. contour; 4)采用二步深度反应离子刻蚀工艺自所述(111)单晶硅基底背面定义所述质量块的轮廓;4) using a two-step deep reactive ion etching process to define the outline of the mass from the back of the (111) single crystal silicon substrate; 5)在所述释放窗口内化学气相沉积氧化硅作为侧壁钝化保护层;5) chemical vapor deposition of silicon oxide as the sidewall passivation protective layer in the release window; 6)利用反应离子刻蚀工艺去除所述释放窗口底部的所述侧壁钝化保护层,然后再利用硅深度反应离子刻蚀工艺继续向下刻蚀所述释放窗口底部裸露出来的单晶硅,以形成所述固支板、所述质量块、连接板及所述直拉直压梁的释放牺牲间隙;6) Remove the sidewall passivation protection layer at the bottom of the release window by using a reactive ion etching process, and then continue to etch down the exposed monocrystalline silicon at the bottom of the release window by using a silicon deep reactive ion etching process. , so as to form the release sacrifice gap of the fixing plate, the mass block, the connecting plate and the straight-straightening beam; 7)通过所述释放牺牲间隙利用湿法刻蚀工艺横向腐蚀所述(111)单晶硅基底,释放所述直拉直压梁;7) laterally etching the (111) single crystal silicon substrate through the release sacrificial gap using a wet etching process to release the straight-stretched beam; 8)去除所述(111)单晶硅基底表面残余的钝化保护层,制作欧姆接触区域和引线孔;8) removing the residual passivation protective layer on the surface of the (111) single crystal silicon substrate, and making ohmic contact regions and lead holes; 9)在所述(111)单晶硅基底表面制作引线和焊盘。9) Making leads and pads on the surface of the (111) single crystal silicon substrate. 11.根据权利要求10所述的单芯片硅集成三轴高频宽高冲击加速度计的制作方法,其特征在于:在步骤2)中,通过向所述(111)单晶硅基底进行硼离子注入的方法制作所述力敏电阻,注入倾斜角度为7°~10°,所述力敏电阻的方块电阻值为85欧姆~92欧姆。11 . The method for manufacturing a single-chip silicon-integrated triaxial high-frequency-bandwidth high-impact accelerometer according to claim 10 , wherein in step 2), boron ion implantation is performed on the (111) single-crystal silicon substrate. 12 . The method is used to manufacture the force-sensitive resistor, the injection inclination angle is 7°˜10°, and the sheet resistance value of the force-sensitive resistor is 85 ohms˜92 ohms. 12.根据权利要求10所述的单芯片硅集成三轴高频宽高冲击加速度计的制作方法,其特征在于:在步骤6)中,形成的所述固支板包括第一固支板及第二固支板,所述第一固支板及所述第二固支板的数量均为两块,所述两块第一固支板及所述两块第二固支板分别平行间隔分布,所述第一固支板及所述第二固支板均为矩形板,且所述第一固支板的侧面及所述第二固支板的侧面与<110>晶向均呈45°夹角。12 . The method for manufacturing a single-chip silicon integrated triaxial high-bandwidth and high-impact accelerometer according to claim 10 , wherein in step 6), the formed retaining plate comprises a first retaining plate and a second retaining plate. 13 . Fixing plates, the number of the first fixing plate and the second fixing plate is two, the two first fixing plates and the two second fixing plates are distributed in parallel and spaced apart, respectively, The first clamping plate and the second clamping plate are both rectangular plates, and the side surfaces of the first clamping plate and the second clamping plate are both at 45° to the <110> crystal orientation. angle. 13.根据权利要求10所述的单芯片硅集成三轴高频宽高冲击加速度计的制作方法,其特征在于:在步骤6)中,形成的所述质量块的数量为两块,所述两块质量块平行排布,所述质量块的长度方向与<110>晶向相平行,所述质量块的侧面与<211>晶向相垂直。13 . The method for manufacturing a single-chip silicon integrated triaxial high-bandwidth high-impact accelerometer according to claim 10 , wherein in step 6), the number of the formed mass blocks is two, and the two The mass blocks are arranged in parallel, the length direction of the mass blocks is parallel to the <110> crystallographic direction, and the side surfaces of the mass blocks are perpendicular to the <211> crystallographic direction. 14.根据权利要求13所述的单芯片硅集成三轴高频宽高冲击加速度计的制作方法,其特征在于:在步骤6)中,形成的所述连接板包括第一连接板及第二连接板;所述第一连接板位于两所述质量块之间,且所述第一连接板两端分别与所述两质量块相连接;所述第二连接板位于所述质量块外侧,一端与所述质量块相连接,另一端与所述(111)单晶硅基底相连接;形成的所述固支板包括第一固支板及第二固支板,所述第一固支板及所述第二固支板位于所述单晶硅基底的四边,且与所述(111)单晶硅基底的边缘具有间距。14 . The method for manufacturing a single-chip silicon-integrated triaxial high-bandwidth high-impact accelerometer according to claim 13 , wherein in step 6), the formed connecting board includes a first connecting board and a second connecting board. 15 . ; The first connecting plate is located between the two mass blocks, and both ends of the first connecting plate are respectively connected with the two mass blocks; the second connecting plate is located outside the mass block, and one end is connected to the two mass blocks. The mass block is connected, and the other end is connected with the (111) single crystal silicon substrate; the formed fixing plate includes a first fixing plate and a second fixing plate, the first fixing plate and the The second support plates are located on the four sides of the single crystal silicon substrate, and have a distance from the edge of the (111) single crystal silicon substrate. 15.根据权利要求14所述的单芯片硅集成三轴高频宽高冲击加速度计的制作方法,其特征在于:在步骤7)中,释放的所述直拉直压梁包括第一直拉直压梁、第二直拉直压梁、第三直拉直压梁及第四直拉直压梁;所述第一直拉直压梁位于所述两块质量块之间,且所述第一直拉直压梁两端分别与所述两块质量块相连接;所述第二直拉直压梁位于所述两块质量块外侧,且一端与所述质量块相连接,另一端与所述(111)单晶硅基底相连接;所述第三直拉直压梁对称地分布于所述第一固支板的两侧,且一端与所述第一固支板相连接,另一端与(111)单晶硅基底相连接;所述第四直拉直压梁对称地分布于所述第二固支板的两侧,且一端与所述第二固支板相连接,另一端与所述(111)单晶硅基底相连接。15 . The method for manufacturing a single-chip silicon-integrated triaxial high-bandwidth high-impact accelerometer according to claim 14 , wherein in step 7), the released straight-straightening beam comprises a first straight-straightening compressing beam. 16 . beam, a second straight-straightening beam, a third straight-straightening beam, and a fourth straight-straightening beam; the first straight-straightening beam is located between the two mass blocks, and the first straight-straightening beam The two ends of the straight-straightening beam are respectively connected with the two mass blocks; the second straight-straightening and pressing beam is located outside the two mass blocks, and one end is connected with the mass blocks, and the other end is connected with the two mass blocks. The (111) single crystal silicon substrates are connected to each other; the third straight-straightening beams are symmetrically distributed on both sides of the first retaining plate, and one end is connected to the first retaining plate, and the other end is connected to the first retaining plate. connected with the (111) single crystal silicon substrate; the fourth straight-straightening beam is symmetrically distributed on both sides of the second retaining plate, and one end is connected to the second retaining plate, and the other end is connected to the second retaining plate. connected with the (111) single crystal silicon substrate. 16.根据权利要求15所述的单芯片硅集成三轴高频宽高冲击加速度计的制作方法,其特征在于:所述第一直拉直压梁及所述第二直拉直压梁的数量均为两个,所述第一直拉直压梁及所述第二直拉直压梁的长度方向均为<211>晶向,且所述第一直拉直压梁及所述第二直拉直压梁的长度方向与所述质量块的侧面相垂直;所述第三直拉直压梁及所述第四直拉直压梁的数量均为四个;四个所述第三直拉直压梁分别两两对称地分布于所述第一固支板的两侧,且呈“一”字分布,所述第三直拉直压梁的长度方向与所述第一固支板的侧面相垂直,且与<110>晶向呈45°夹角;四个所述第四直拉直压梁分别两两对称地分布于所述第二固支板的两侧,且呈“一”字分布,所述第四直拉直压梁的长度方向与所述第二固支板的侧面相垂直,且与<110>晶向呈45°夹角。16 . The method for manufacturing a single-chip silicon-integrated triaxial high-bandwidth high-impact accelerometer according to claim 15 , wherein the number of the first straight-straightening beam and the second straight-straightening beam is equal to 16 . There are two, the length directions of the first straight-straightening beam and the second straight-straightening beam are both the <211> crystal direction, and the first straight-straightening beam and the second straight-straightening beam are The length direction of the straightening beam is perpendicular to the side surface of the mass block; the number of the third straightening beam and the fourth straightening beam is four; The straightening and pressing beams are symmetrically distributed on both sides of the first fixing plate, and are distributed in the shape of "one", and the length direction of the third straightening and pressing beam is the same as that of the first fixing plate. The sides are perpendicular to the <110> crystal direction and form an included angle of 45°; the four fourth straight-straightening beams are symmetrically distributed on both sides of the second retaining plate, and are " The length direction of the fourth straightening beam is perpendicular to the side surface of the second retaining plate, and forms an included angle of 45° with the <110> crystal direction.
CN201610703474.1A 2016-08-22 2016-08-22 Single-chip silicon integrated three-axis high-frequency-bandwidth high-impact accelerometer and method of making the same Active CN106053881B (en)

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