CN106033788B - A kind of method that 370-380nm high brightness near ultraviolet LEDs are prepared using MOCVD technologies - Google Patents
A kind of method that 370-380nm high brightness near ultraviolet LEDs are prepared using MOCVD technologies Download PDFInfo
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- 238000005516 engineering process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract 8
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000011777 magnesium Substances 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000010437 gem Substances 0.000 claims description 2
- 229910001751 gemstone Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 238000005457 optimization Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 2
- XZGYRWKRPFKPFA-UHFFFAOYSA-N methylindium Chemical compound [In]C XZGYRWKRPFKPFA-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract 17
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 238000011160 research Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000012576 optical tweezer Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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Abstract
The present invention provides a kind of method that 370 380nm near ultraviolet LEDs of high brightness are prepared using MOCVD technologies.Its LED epitaxial structure is followed successively by from bottom to top：PSS substrates, AlN nucleating layers, the undoped Al of high temperaturey1Ga1‑y1N merges layer, Aly2Ga1‑y2N stress regulation and control layers, n-type Aly3Ga1‑y3N contact layers, n-type Inx1Ga1‑x1N/Aly4Ga1‑y4N stress release layers, InxGa1‑xN/AlyGa1‑yN multiple quantum well active layers, p-type Aly5Ga1‑y5N electronic barrier layers, high temperature p-type Aly6Ga1‑y6N contact layers.In the present invention, merge layer and use assertive evidence Aly1Ga1‑y1N, Al component increase with growth thickness from 0 linear change to 0.05；N-contact layer is using fixed Al component n-types Aly3Ga1‑y3N layers；P type contact layer uses Aly5Ga1‑y5N layers, absorption loss of the GaN material to 370 380nm purple lights is effectively reduced, so as to improve near ultraviolet LED luminous efficiency；One layer of Al is grown in intrinsic AlGaN layer and n-type AlGaN contact interlayersy2Ga1‑y2N stress regulation and control layers effectively alleviate n-type AlGaN layer stress, so as to improve n AlGaN crystal quality.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, a kind of production method of near ultraviolet light emitting diode especially relates to
And a kind of using MOCVD (Metal Organic Vapor extension) technology, to prepare peak wavelength closely purple in 370-380nm high brightness
The method of outer LED.
Background technology
Ultraviolet semiconductor light source is mainly used in biologic medical, authentication, purification (water, air etc.) field, computer
Data storage and military affairs etc..With the progress of ultraviolet Technology, new application can continuously emerge to substitute original technology
And product, ultraviolet leds have wide market application foreground.Ultraviolet source will develop general illumination, optical tweezer, plant life
Length, petroleum pipeline leak detection, archaeology application differentiate true and false etc. purposes.Semiconductor ultraviolet source is as semiconductor lighting
Another great industry direction, caused the extensive concern of semiconductor optoelectronic industry.The U.S., Japan, South Korea etc. throw invariably
Enter huge strength in the hope of occupying the commanding elevation of industry.The great item of China's Eleventh Five-Year Plan National 863 plan new material technology field
Mesh " Semiconductor Lighting " problem " deep ultraviolet LED is prepared and application technical research " passes through lasting research and development, obtains important prominent
It is broken.During "the 10th five-years", Peking University once undertook the National 863 problem of near ultraviolet LED, developed 380~405nm near ultraviolet LEDs
Luminous power reaches 110mW under 350mA.Ultraviolet LED is further studied during 11th Five-Year, 12, obtains emission wavelength 280
~315nm ultraviolet emissions.In addition, the units such as semiconducter research institute of the Chinese Academy of Sciences, Xiamen University, Qingdao is outstanding raw be also just directed to it is ultraviolet
LED is studied, and the ultraviolet LED luminous power of 300nm has reached mW magnitudes.Different from blue light, ultraviolet LED is in technology hair at present
The duration of an exhibition, the less-restrictive in terms of patent and intellectual property, beneficial to capture, the technology commanding elevation of the Fashion of Future.The country is in ultraviolet LED
Equipment, have certain accumulation in terms of material and device, it is currently positive to develop to application module.In UV-LED shapes
It guides and supports to seize the first opportunity in terms of core technology into country is also needed to before extensive industry.
The matter of utmost importance that ultraviolet LED technology faces is that its light efficiency is low.The ultraviolet LED output power of wavelength 365nm is only defeated
Enter the 5%-8% of power.How to effectively improve the light efficiency of ultraviolet LED becomes everybody focus of attention problem.The present invention is by setting
Ultraviolet leds structure is counted, GaN can effectively be reduced by merging layer and n (p) type AlGaN contact layers using the AlGaN containing Al components
Material is to the absorption loss of the purple light of emission wavelength range 370-380nm.Simultaneously using Al0.2Ga0.8N stress regulation and controls layer is effectively slow
N-type AlGaN layer stress is solved, to improve n-type AlGaN crystal quality, improves near ultraviolet LED luminous efficiency.
The content of the invention
Present invention offer is a kind of to prepare peak wavelength in the side of 370-380nm high brightness near ultraviolet LEDs using MOCVD technologies
Method.By designing new LED structure, merging layer and n (p) type AlGaN contact layers using the AlGaN containing Al components can have
Effect reduces absorption loss of the GaN material to the purple light of emission wavelength range 370-380nm, so as to effectively improve near ultraviolet LED
Luminous efficiency.Simultaneously using Al0.2Ga0.8The effectively slow n-type AlGaN layer stress of N stress regulation and controls layer, improves n-type AlGaN crystal matter
Amount, to improve near ultraviolet LED luminous efficiency.
The technical solution of the present invention：A kind of method that high brightness near ultraviolet LED is prepared using MOCVD technologies, it is described
LED for peak wavelength scope in 370-380nm high brightness near ultraviolet LEDs, epitaxial structure is followed successively by from bottom to top：It is graphical blue
Jewel substrate (PSS), AlN nucleating layers, the undoped Al of high temperaturey1Ga1-y1N merges layer, Aly2Ga1-y2N stress regulation and control layers, n-type
Aly3Ga1-y3N contact layers, n-type Inx1Ga1-x1N/Aly4Ga1-y4N superlattices stress release layer, InxGa1-xN/AlyGa1-yN Multiple-quantums
Trap active layer, p-type Aly5Ga1-y5N electronic barrier layers, high temperature p-type Aly6Ga1-y6N contact layers；Its preparation method includes following step
Suddenly：
Step 1, by PSS substrates in Metal Organic Vapor epitaxial reactor, in H2Under (hydrogen) atmosphere,
1080-1100 DEG C, under chamber pressure 100torr, handle 5-10 minutes；Then in 1050-1100 DEG C, chamber pressure
100torr、H2Under atmosphere, using V/III molar ratios as 500-1300, the AlN buffer layers of 20-30 nanometer thickness are grown；
Step 2, in 1000-1100 DEG C, chamber pressure 200-300torr, H2Under atmosphere, using V/III molar ratios as
1000-1300 grows the 2-4 microns of undoped intrinsic Al of thick high temperaturey1Ga1-y1N merges layer, Al components y1With growth thickness
Increase from 0 linear change to 0.05；
Step 3, in 1000-1100 DEG C, chamber pressure 100-200torr, H2Under atmosphere, using V/III molar ratios as
1000-1300 grows the Al of 20-50 nanometer thicknessy2Ga1-y2N stress control layers, wherein 0.2≤y2≤0.3；
Step 4, in 1000-1100 DEG C, chamber pressure 100-200torr, H2Under atmosphere, using V/III molar ratios as
1000-1300, Si doping concentration are 1018-1019cm-3, grow n-type Al 2-4 microns thicky3Ga1-y3N contact layers, using fixed Al
Component y3, 0.05≤y3；
Step 5, in 750-850 DEG C, chamber pressure 300torr, N2Under (nitrogen) atmosphere, using V/III molar ratios as
5000-10000, Si doping concentration are more than 1019cm-3, the n-type In in 5 to 10 cycles of growthx1Ga1-x1N/Aly4Ga1-y4N surpasses crystalline substance
The shallow well In of lattice structural stress releasing layer, wherein stress release layerx1Ga1-x1N layer thickness is 2-4nm, In components x1Less than having
Active layer In component x, i.e. x1≤ x≤0.03, the shallow base Al of stress release layery4Ga1-y4N layer thickness is 2.5-5nm, Al components y4
Less than active layer Al component y, i.e. 0.01≤y4≤y≤0.1；
Step 6, in 750-850 DEG C, chamber pressure 300torr, N2Under atmosphere, using V/III molar ratios as 5000-
10000, then grow 5-10 cycle InxGa1-xN/AlyGa1-yN multiple quantum well active layers, wherein InxGa1-xN quantum well layer thickness
For 2-3nm, In components x, 0<X≤0.03, and barrier layer AlyGa1-yN thickness be 10-20nm, Al components y, 0.01≤y≤
0.1；
Step 7, in 950-1050 DEG C, chamber pressure 100-300torr, H2Under atmosphere, using V/III molar ratios as
5000-10000, Mg doping concentration are 1017-1018cm-3, on active layer, grow the p-type Al of 20-40nm thicknessy5Ga1-y5N electronics
Barrier layer, Al components y5More than Al the component y, i.e. 0.1≤y of active layer5≤0.2；
Step 8, in 950-1050 DEG C, chamber pressure 100torr, H2Under atmosphere, using V/III molar ratios as 2000-
5000th, Mg doping concentrations are 1017-1018cm-3, growth 100-200nm high temperature p-types Aly6Ga1-y6N layers of contact layer, Al components
y6, 0.02≤y6≤0.05。
The present invention is a kind of to prepare method of the peak wavelength in 370-380nm high brightness near ultraviolet LEDs using MOCVD technologies,
It is designed by new LED structure, especially：(1) the undoped Al of the high temperaturey1Ga1-y1N merges layer, using its Al component y1With
The increase of growth thickness from 0 linear change to 0.05；The n-type Aly3Ga1-y3N contact layers, using fixed Al components y3,
0.05≤y3；The high temperature p-type Aly6Ga1-y6N contact layers, using its Al component y6, 0.02≤y6≤0.05；Pass through these three knots
The introducing and optimization of structure layer, can effectively reduce GaN base material to peak wavelength the ultraviolet light of 370-380nm absorption loss,
So as to effectively improve the luminous efficiency of near ultraviolet LED；(2) layer and n-type AlGaN contact layers are merged in the high temperature undoped AlGaN
Between, grow the Al that a layer thickness is 20-50nmy2Ga1-y2N stress regulation and control layers (0.2≤y2≤ 0.3), to regulate and control n-type AlGaN
The stress state of contact layer improves crystal quality.
The present invention, during the structure growth of LED epitaxial wafer, with trimethyl gallium (TMGa), triethyl-gallium, trimethyl
Aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source；With silane (SiH4) and two luxuriant magnesium (Cp2Mg) respectively as n-type,
P-type dopant.
Description of the drawings
Fig. 1 is the embodiment of the present invention, and a kind of peak wavelength is in the sectional elevation of 370nm-380nm high brightness near ultraviolet LEDs
View；Wherein：101：PSS (graphic sapphire) substrate 102：AlN nucleating layers 103：The undoped Al of high temperaturey1Ga1-y1N merges layer
104：Aly2Ga1-y2N stress regulation and controls layer 105：N-type Aly3Ga1-y3N contact layers 106：N-type Inx1Ga1-x1N/Aly4Ga1-y4N stress is released
Put layer 107：InxGa1-xN/AlyGa1-yN multiple quantum well active layers 108：P-type Aly5Ga1-y5N electronic barrier layers 109：High temperature p-type
Aly6Ga1-y6N contact layers；
Fig. 2 is the embodiment of the present invention, a kind of peak wavelength 370-380nm high brightness near ultraviolet LED 20mA work
Electroluminescence spectrum under electric current.
Specific embodiment
Present invention offer is a kind of to prepare peak wavelength in the side of 370-380nm high brightness near ultraviolet LEDs using MOCVD technologies
Method.By designing new LED structure, using the undoped intrinsic AlGaN of Al compositions variation and the n-type of fixed Al components
AlGaN, p-type AlGaN are respectively as layer, n-contact layer and P type contact layer is merged, effectively to reduce GaN base material to peak value ripple
The absorption loss in the ultraviolet light of 370-380nm is grown, and then effectively improves the luminous efficiency of near ultraviolet LED.
It is the embodiment of the present invention shown in Fig. 1, it is a kind of that peak wavelength is prepared in 370-380nm high brightness using MOCVD technologies
The sectional elevation view of near ultraviolet LED.
Using Aixtron companies, the vertical reative cell MOCVD growing systems of close coupling.Trimethyl gallium is used in growth course
(TMGa), trimethyl indium (TMIn), trimethyl aluminium (TMAl) are used as group III source, ammonia (NH3) as group V source, silane (SiH4)
As n-shaped doped source, two luxuriant magnesium (Cp2Mg) it is used as p-type doped source.First in Metal Organic Vapor epitaxial reactor
By PSS substrates 101, in H2(hydrogen) atmosphere, 1080-1100 DEG C, under chamber pressure 100torr, handle 5-10 minutes；Then
In 1050-1100 DEG C, chamber pressure 100torr, H2Under atmosphere, V/III molar ratios are 500-1300, grow 20-30 nanometers
Thick AlN buffer layers 102；In 1000-1100 DEG C, chamber pressure 200-300torr, H2Under atmosphere, V/III molar ratios are
1000-1300 grows high temperature Al 2-4 microns thicky1Ga1-y1N merges layer 103, and wherein Al components y1 is with the increase of growth thickness
From 0 linear change to 0.05；In 1000-1100 DEG C, chamber pressure 100-200torr, H2Under atmosphere, V/III molar ratios are
1000-1300 grows the high temperature Al of 20-50 nanometer thickness0.2Ga0.8N stress control layers 104；In 1000-1100 DEG C, reaction chamber pressure
Power 100-200torr, H2Under atmosphere, V/III molar ratios are that 1000-1300, Si doping concentration are 1018-1019cm-3, grow 2-4
The thick n-Al of micron0.05Ga0.95N contact layers 105；In 750-850 DEG C, chamber pressure 300torr, N2Under (nitrogen) atmosphere, V/
III molar ratios are more than 10 for 5000-10000, Si doping concentration19cm-3, the n-type In in 5 to 10 cycles of growth0.01Ga0.99N/
Al0.05Ga0.95N superlattice structures stress release layer 106, wherein stress release layer shallow well Inx1Ga1-x1N layers of thickness is 2-4nm,
Shallow base Aly4Ga1-y4The layer thickness of N is 2.5-5nm；In 750-850 DEG C, chamber pressure 300torr, N2Under atmosphere, V/III rubs
You then grow 5-10 cycle In than being 5000-100000.03Ga0.97N/Al0.1Ga0.9N multiple quantum well active layers 107, wherein
InxGa1-xN quantum well layer thickness is 2-3nm, AlyGa1-yN barrier layer thicknesses are 10-20nm；In 950-1050 DEG C, chamber pressure
100-300torr、H2Under atmosphere, V/III molar ratios are that 5000-10000, Mg doping concentration are 1017-1018cm-3, in active layer
On, the p-type Al of growth 20nm thickness0.1Ga0.9N electronic barrier layers 108；；In 950-1050 DEG C, chamber pressure 100torr, H2Gas
Under atmosphere, V/III molar ratios are that 2000-5000, Mg doping concentration are 1017-1018cm-3, the high temperature p of growth 100nm-200nm thickness
Type Al0.02Ga0.98N contact layers 109.
Using V/III molar ratios as 2000-5000, Mg doping concentrations are 1017-1018cm-3
After epitaxial growth, the temperature of reative cell is down to 700-750 DEG C, is made annealing treatment using pure nitrogen gas atmosphere
Then 5-20min is down to room temperature, terminate growth, and single 12mil is made in epitaxial structure after over cleaning, deposition, photoetching and etching
× 12mil small-size chips.It is illustrated in figure 2 using the black light LED's that technical solution makes in embodiment in the present invention
Spectrum, using technical solution in embodiment：Layer is merged using the AlGaN containing Al components and n (p) type AlGaN contact layers can
Effectively reduce absorption loss of the GaN material to the purple light of emission wavelength range 370-380nm.Simultaneously using Al0.2Ga0.8N stress
Regulation and control layer effectively alleviates n-type AlGaN stress, n-type AlGaN crystal quality is improved, to improve near ultraviolet LED luminous efficiency.
Embodiment described above is merely illustrative of the invention's technical idea and feature, and description is more specific and detailed,
Its object is to which those of ordinary skill in the art is enable to understand present disclosure and are implemented according to this, therefore cannot be only with this
Come limit the present invention the scope of the claims, but can not therefore and be interpreted as limitation of the scope of the invention.It should be pointed out that pair
For those of ordinary skill in the art, without departing from the inventive concept of the premise, several deformations can also be made and changed
Into that is, all variations made according to disclosed spirit should be covered in the scope of the claims of the present invention.
Claims (5)
- A kind of 1. method that 370-380nm high brightness near ultraviolet LEDs are prepared using MOCVD technologies, it is characterised in that：The LED It is peak wavelength scope in 370-380nm high brightness near ultraviolet LEDs, epitaxial structure is followed successively by from bottom to top：It is graphical blue precious Stone lining bottom (101), AlN nucleating layers (102), the undoped Al of high temperaturey1Ga1-y1N merges layer (103), Aly2Ga1-y2N stress regulation and control layers (104), n-type Aly3Ga1-y3N contact layers (105), n-type Inx1Ga1-x1N/Aly4Ga1-y4N superlattices stress release layer (106), InxGa1-xN/AlyGa1-yN multiple quantum well active layers (107), p-type Aly5Ga1-y5N electronic barrier layers (108), high temperature p-type Aly6Ga1-y6N contact layers (109)；Its preparation method comprises the following steps：Step 1, by PSS substrates (101) in MOCVD reative cells, in H2（Hydrogen）Atmosphere, 1080-1100 DEG C, chamber pressure Under 100torr, handle 5-10 minutes；Then in 1050-1100 DEG C, chamber pressure 100torr, H2Under atmosphere, rubbed with V/III You grow the AlN nucleating layers (102) of 20-30 nanometer thickness than being 500-1300；Step 2, in 1000-1100 DEG C, chamber pressure 200-300torr, H2Under atmosphere, using V/III molar ratios as 1000- 1300, grow the 2-4 microns of undoped Al of thick high temperaturey1Ga1-y1N merges layer (103)；Step 3, in 1000-1100 DEG C, chamber pressure 100-200torr, H2Under atmosphere, using V/III molar ratios as 1000- 1300, grow Aly2Ga1-y2N stress regulation and controls layer (104)；Step 4, in 1000-1100 DEG C, chamber pressure 100-200torr, H2Under atmosphere, using V/III molar ratios as 1000- 1300, Si doping concentrations are 1018-1019cm-3, grow n-type Al 2-4 microns thicky3Ga1-y3N contact layers (105)；Step 5, in 750-850 DEG C, chamber pressure 300torr, N2（Nitrogen）Under atmosphere, using V/III molar ratios as 5000- 1000, Si doping concentrations are more than 1019cm-3, the n-type In in 5 to 10 cycles of growthx1Ga1-x1N/Aly4Ga1-y4N superlattices stress Releasing layer (106), wherein stress release layer shallow well Inx1Ga1-x1N layers of thickness is 2-4nm, In components x1Less than active layer In component x, i.e. x1≤ x≤0.03, the shallow base Al of stress release layery4Ga1-y4N layer thickness is 2.5-5nm, Al components y4Less than having Al the component y, i.e. 0.01≤y of active layer4≤y≤0.1；Step 6, in 750-850 DEG C, chamber pressure 300torr, N2Under atmosphere, using V/III molar ratios as 5000-10000, connect Growth 5-10 cycle InxGa1-xN/AlyGa1-yN multiple quantum well active layers (107), wherein InxGa1-xN quantum well layer thickness is 2-3nm, In component x, 0<X≤0.03, barrier layer AlyGa1-yN thickness be 10-20nm, Al component y, 0.01≤y≤0.1；Step 7, in 950-1050 DEG C, chamber pressure 100-300torr, H2Under atmosphere, using V/III molar ratios as 5000- 10000, Mg doping concentrations are 1017-1018cm-3 , on active layer, grow the p-type Al of 20-40nmy5Ga1-y5N electronic barrier layers (108), Al components y5More than active layer Al component y, i.e. 0.1≤y5≤0.2；Step 8, in 950-1050 DEG C, chamber pressure 100torr, H2Under atmosphere, using V/III molar ratios as 2000-5000, Mg Doping concentration is 1017-1018cm-3, growth 100-200nm high temperature p-types Aly6Ga1-y6N contact layers (109).
- 2. a kind of method that 370-380nm high brightness near ultraviolet LEDs are prepared using MOCVD technologies according to claim 1, It is characterized in that：The undoped Al of high temperaturey1Ga1-y1N merges layer (103), using its Al component y1With the increasing of growth thickness Add from 0 linear change to 0.05；The n-type Aly3Ga1-y3N contact layers (105), using fixed Al components y3 , 0.05≤y3 ；Institute State high temperature p-type Aly6Ga1-y6N contact layers (109), using its Al component y6, 0.02≤y6≤0.05；Pass through these three structure sheafs Introduce and optimization, can effectively reduce GaN base material to peak wavelength 370-380nm ultraviolet lights absorption loss, so as to effectively Improve the luminous efficiency of its near ultraviolet LED.
- 3. a kind of method that 370-380nm high brightness near ultraviolet LEDs are prepared using MOCVD technologies according to claim 1, It is characterized in that：Merge layer in the undoped AlGaN（103）With n-type AlGaN contact layers（105）Between, grow a layer thickness For the Al of 20-50nmy2Ga1-y2N stress regulation and control layers（104）, Al components y2, 0.2≤y2≤ 0.3, to regulate and control n-type AlGaN contacts The stress state of layer improves crystal quality.
- 4. a kind of method that 370-380nm high brightness near ultraviolet LEDs are prepared using MOCVD technologies according to claim 1, It is characterized in that：During the LED epitaxial wafer structure growth, with trimethyl gallium（TMGa）, triethyl-gallium, trimethyl aluminium, three Methyl indium and ammonia are respectively as Ga, Al, In and N source.
- 5. a kind of method that 370-380nm high brightness near ultraviolet LEDs are prepared using MOCVD technologies according to claim 1, It is characterized in that：During the LED epitaxial wafer structure growth, with silane（SiH4）With two luxuriant magnesium（Cp2Mg）Respectively as n-type, P-type dopant.
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