CN106024732B - A kind of production method of device for temperature control - Google Patents
A kind of production method of device for temperature control Download PDFInfo
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- CN106024732B CN106024732B CN201610389976.1A CN201610389976A CN106024732B CN 106024732 B CN106024732 B CN 106024732B CN 201610389976 A CN201610389976 A CN 201610389976A CN 106024732 B CN106024732 B CN 106024732B
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- ceramic substrate
- pedestal
- pipe clamp
- temperature control
- production method
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 79
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 51
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000005245 sintering Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000010304 firing Methods 0.000 claims description 13
- 230000003068 static effect Effects 0.000 claims description 13
- 230000003014 reinforcing effect Effects 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 9
- 239000011230 binding agent Substances 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 235000012149 noodles Nutrition 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 230000032683 aging Effects 0.000 abstract description 4
- 238000004891 communication Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 210000003205 muscle Anatomy 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Products (AREA)
Abstract
The invention belongs to single photon detection and field of quantum secure communication, a kind of more particularly to device for temperature control and preparation method thereof, device includes the pipe clamp or pedestal with ceramic substrate integral type sinter molding, and the integral structure that ceramic substrate is formed with pipe clamp or pedestal is made of aluminium oxide ceramics.Ceramic substrate and pipe clamp or pedestal are arranged to integral structure by the present invention, and connection is reliable, high-low temperature resistant circulation, resistance to oxidation, ageing-resistant, service life length；And scale of mass production is can adapt to, improve uniformity, the reliability of device performance.
Description
Technical field
The invention belongs to the system of single photon detection and field of quantum secure communication, more particularly to a kind of device for temperature control
Make method.
Background technology
In single photon detection and Quantum Secure Communication field, controlled frequently with semiconductor heating refrigerator (TEC)
The temperature of avalanche diode or waveguide component processed, avalanche diode and waveguide component are individually positioned on pipe clamp and pedestal, and TEC is first
Pipe clamp or pedestal are conducted heat to by ceramic substrate, avalanche diode is then conducted heat to by pipe clamp or pedestal again
Or waveguide component, as shown in Figure 1, pipe clamp 13 ' or pedestal and ceramic substrate 12 ' are split structure in the prior art, pipe clamp 13 '
Or pedestal is made of metal material, the faying face M between pipe clamp 13 ' or pedestal and ceramic substrate 12 ' substantially has two kinds of connection sides
Formula：
(1) ceramic substrate 12 ' of TEC upper surfaces is welded with pipe clamp 13 ' or pedestal for scolding tin.The defects of connection mode, exists
In：Since device use environment requires pipe clamp or pedestal to be in room temperature and -50 DEG C or 60 DEG C of alternate environment, and working environment
Inside cannot remove the moisture in air, the metalized portion of ceramic substrate 12 ' and pipe clamp of TEC upper surfaces after a period of time that works
13 ' or pedestal scolding tin weld can aoxidize, pipe clamp 13 ' or pedestal will come off, and cause product not to be continuing with.
(2) ceramic substrate 12 ' of TEC upper surfaces is bonded with pipe clamp 13 ' or pedestal for heat conductive silica gel.The connection mode lacks
Be trapped in：The thermal conductivity factor of heat conductive silica gel is too low, and the time that pipe clamp 13 ' or pedestal reach preferable set temperature is longer, thermal conductive silicon
Glue smearing is cumbersome with curing process, and there are problem of aging for heat conductive silica gel.
The content of the invention
The technical problems to be solved by the invention are to provide the high device for temperature control of a kind of good heat conduction effect, durability
Production method.
The present invention is to solve above-mentioned technical problem by following technological means：A kind of device for temperature control, including half
Conductor heats refrigerator, and the huyashi-chuuka (cold chinese-style noodles) of the semiconductor heating refrigerator is equipped with die array, and the die array is by high heat conduction gold
Belong to material to be made, ceramic substrate and the pipe clamp for housing avalanche diode, the pipe clamp are equipped with above the die array
It is made of ceramic materials, and pipe clamp is formed by a firing with ceramic substrate integral type, metalized is done in the ceramic substrate bottom, gold
Ceramic substrate bottom after categoryization processing is welded and fixed with the die array；
Preferably, reinforcing rib, the reinforcing rib and pottery are equipped between the side wall of the pipe clamp and the upper surface of ceramic substrate
Ceramic chip and pipe clamp integral type form by a firing；
Preferably, the ceramic substrate and pipe clamp are made of aluminium oxide ceramics；
Preferably, the huyashi-chuuka (cold chinese-style noodles) of the semiconductor heating refrigerator is equipped with multi-layered ceramic substrate, and each layer ceramic substrate is mutually flat
Between-line spacing is set, and die array is equipped between adjacent two layers ceramic substrate, wherein outermost layer ceramic substrate and the pipe clamp
Integral type forms by a firing.
A kind of device for temperature control, including semiconductor heating refrigerator, the hot face of the semiconductor heating refrigerator are set
Have die array, the die array is made of high-thermal conductive metal material, be equipped with above the die array ceramic substrate and
For housing the pedestal of waveguide component, the pedestal is made of ceramic materials, and pedestal is formed by a firing with ceramic substrate integral type,
Metalized is done in the ceramic substrate bottom, and the ceramic substrate bottom after metalized and die array welding are solid
It is fixed；
Preferably, reinforcing rib, the reinforcing rib and pottery are equipped between the side wall of the pedestal and the upper surface of ceramic substrate
Ceramic chip and pedestal integral type form by a firing；
Preferably, the ceramic substrate and pedestal are made of aluminium oxide ceramics；
Preferably, the hot face of the semiconductor heating refrigerator is equipped with multi-layered ceramic substrate, and each layer ceramic substrate is mutually flat
Between-line spacing is set, and die array is equipped between adjacent two layers ceramic substrate, wherein outermost layer ceramic substrate and the pedestal
Integral type forms by a firing.
A kind of production method for manufacturing described device, includes the following steps：
Step 1：Alumina powder is prepared into less than 1 micron powder；
Step 2：Organic binder bond is uniformly mixed with alumina powder, organic binder bond proportion is 5%-20%；
Step 3：Alumina slurry is injected into mould；
Step 4：Mould is put into sintering furnace and carries out preliminary static pressure sintering, preliminary static pressure sintering temperature control is at 800 DEG C；
Step 5：Demoulded after preliminary sintering, pressurizeed using plane and ensure shape, then carry out high temperature static pressure sintering, the height
Warm static pressure sintering temperature control is at 1200 DEG C -2000 DEG C；
Step 6：After the completion of sintering, injecting hole is ground to smooth, ceramic substrate and pipe clamp or the making of pedestal integral structure
Complete；
Step 7：Metalized is carried out to ceramic substrate bottom, ceramic substrate bottom is adhered to one layer of metal foil securely
Film；
Step 8：Ceramic substrate and die array are welded and fixed using the metallic film；
Preferably, the aluminium oxide selects any one in 93-99 aluminium oxide.
The technical effects of the invention are that：Ceramic substrate and pipe clamp or pedestal are arranged to integral structure by the present invention, even
Connect reliable, high-low temperature resistant circulation, resistance to oxidation, ageing-resistant, service life length；And scale of mass production is can adapt to, improve device
Uniformity, the reliability of performance.
Brief description of the drawings
Fig. 1 is temperature control device structure diagram of the prior art；
Fig. 2 is the dimensional structure diagram of the present invention；
Fig. 3 is the pipe clamp dimensional structure diagram of the present invention；
Fig. 4 is the tridimensional structure diagram of the present invention.
Embodiment
Following embodiments are further explanations for present invention using as the explaination to the technology of the present invention content, but
The present invention substantive content be not limited in described in following embodiments, those of ordinary skill in the art can with and should know appoint
What simple change or replacement based on true spirit should all belong to protection domain of the presently claimed invention.
In the description of the present invention, it is necessary to explanation, the orientation or position of the instruction such as term " on ", " under ", " interior ", " outer "
It is based on orientation shown in the drawings or position relationship to put relation, is for only for ease of the description present invention and simplifies description, rather than
Indicate or imply that signified device or element there must be particular orientation construction and operate, therefore it is not intended that to the present invention's
Limitation.
Embodiment 1
As shown in Figure 2,3, a kind of device for temperature control, including semiconductor heating refrigerator 10, the semiconductor heating
The huyashi-chuuka (cold chinese-style noodles) of refrigerator 10 is equipped with die array 11, and the die array 11 is made of high-thermal conductive metal material, the die array
11 tops are equipped with ceramic substrate 12 and the pipe clamp 13 for housing avalanche diode, and the pipe clamp 13 is halfpipe, pipe
Folder 13 is equipped with least one arc groove 131 for being used to house avalanche diode, and the pipe clamp 13 is made of ceramic materials, and is managed
Folder 13 is formed by a firing with 12 integral type of ceramic substrate, and metalized is done in 12 bottom of ceramic substrate, after metalized
12 bottom of ceramic substrate is welded and fixed with the die array 11.Pipe clamp 13 and the ceramics of 10 upper surface of semiconductor heating refrigerator
Substrate 12 makes into a single integrated structure, can increase considerably the service life of temperature control device, increase product reliability, save into
This.
Preferably, reinforcing rib 15, the reinforcement are equipped between the side wall of the pipe clamp 13 and the upper surface of ceramic substrate 12
Muscle 15 is formed by a firing with ceramic substrate 12 and 13 integral type of pipe clamp.Mechanism without reinforcing rib 15, can also meet use demand, but
In view of the perfection of structure, reinforcing rib 15 is introduced, can significantly optimize flatness and circularity, it is reliable to increase product again
Property.
Preferably, the ceramic substrate 12 and pipe clamp 13 are made of aluminium oxide ceramics.When designing the integrative-structure, first
Difficult point is the selection of material, to there is good heat conduction and certain structural strength, and experiment 93-99 aluminium oxide, which can all meet to use, to be wanted
Ask.
Preferably, the huyashi-chuuka (cold chinese-style noodles) of the semiconductor heating refrigerator 10 is equipped with multi-layered ceramic substrate, and each layer ceramic substrate is mutual
Parallel interval is set, and die array is equipped between adjacent two layers ceramic substrate, wherein outermost layer ceramic substrate 12 with it is described
13 integral type of pipe clamp forms by a firing.
Embodiment 2
As shown in Fig. 2 combinations Fig. 4, a kind of device for temperature control, including semiconductor heating refrigerator 10, the semiconductor
The hot face of heating refrigerator 10 is equipped with die array 11, and the die array 11 is made of high-thermal conductive metal material, the crystal grain
The top of array 11 is equipped with ceramic substrate 12 and the pedestal 14 for housing waveguide component, and the pedestal 14 is bar groove-like structure,
The pedestal 14 is made of ceramic materials, and pedestal 14 is formed by a firing with 12 integral type of ceramic substrate, 12 bottom of ceramic substrate
Metalized is done in portion, and 12 bottom of ceramic substrate after metalized is welded and fixed with the die array 11.
Preferably, reinforcing rib 15, the reinforcement are equipped between the side wall of the pedestal 14 and the upper surface of ceramic substrate 12
Muscle 15 is formed by a firing with ceramic substrate 12 and 14 integral type of pedestal.
Preferably, the ceramic substrate 12 and pedestal 14 are made of aluminium oxide ceramics.
Preferably, the hot face of the semiconductor heating refrigerator 10 is equipped with multi-layered ceramic substrate, and each layer ceramic substrate is mutual
Parallel interval is set, and die array is equipped between adjacent two layers ceramic substrate, wherein outermost layer ceramic substrate 12 with it is described
14 integral type of pedestal forms by a firing.
Embodiment 3
Present invention also offers a kind of production method of the temperature control device of above-described embodiment 1 and 2, include the following steps：
Step 1：Alumina powder is prepared into less than 1 micron powder；
Step 2：Organic binder bond is uniformly mixed with alumina powder, organic binder bond proportion is 5%-20%.
Step 3：Alumina slurry is injected into mould, the design of mould can be according to the shape of pipe clamp 13 or pedestal 14 come specific
Consider, be subject to and adapt to actual use demand；
Step 4：Mould is put into sintering furnace and carries out preliminary static pressure sintering, preliminary static pressure sintering temperature control is at 800 DEG C；
Step 5：Demoulded after preliminary sintering, pressurizeed using plane and ensure shape, then carry out high temperature static pressure sintering, the height
Warm static pressure sintering temperature control is at 1200 DEG C -2000 DEG C；
Step 6：After the completion of sintering, injecting hole is ground to smooth, ceramic substrate 12 and 14 integral type knot of pipe clamp 13 or pedestal
Structure completes；
Step 7：Metalized is carried out to 12 bottom of ceramic substrate, 12 bottom of ceramic substrate is adhered to one layer of gold securely
Belong to film；Ceramic metallization is to adhere to one layer of metallic film securely in ceramic surface, is allowed to realize ceramic and intermetallic weldering
Connect, a variety of ceramic metalizing process such as existing molybdenum manganese method, gold-plated method, copper-plating method, tin plating method, nickel plating method；By taking ceramic nickel plating as an example,
Key step boil wash, coating of metallizing, once metallize (being sintered in high-temperature hydrogen atmosphere), nickel plating, welding；The master of metallization
Syllabus is exactly to reach solderable between metal and ceramics.
Step 8：Ceramic substrate and die array are welded and fixed using the metallic film；
Preferably, the aluminium oxide selects any one in 93-99 aluminium oxide, present invention preferably employs 95 aluminium oxide,
And by the control of preliminary static pressure sintering temperature at 800 DEG C, high temperature static pressure sintering temperature is controlled at 1500 DEG C.
The ceramic substrate 12 of semiconductor heating refrigerator (TEC) the superiors is made as by the present invention with pipe clamp 13 or pedestal 14
Ceramic integral structure, can avoid since metal pipe clamp 13 ' or pedestal and the connection mode of ceramic substrate 12 ' of TEC upper surfaces are
Come off caused by scolding tin welding or heat conduction gluing knot, there are the problem of aging in itself for poor refrigerating efficiency, heat-conducting glue；And ceramics one
Formula pipe clamp is ceramic material, and there is no come off caused by coefficient of expansion difference；Metallize ceramic integrated pipe clamp bottom surface
Processing, is welded with TEC crystal grain 11, since ceramic integrated pipe clamp and 11 welding manner of crystal grain are welded with ceramic substrate 12 ' and crystal grain
It is consistent to connect mode, other undesirable elements will not be introduced.This method efficiently solves the problems, such as that pipe clamp 13 or pedestal come off, and refrigeration
Or heat the problem of bad.
Claims (5)
1. a kind of production method of device for temperature control, the device for temperature control, including semiconductor heating refrigerator, institute
The huyashi-chuuka (cold chinese-style noodles) for stating semiconductor heating refrigerator is equipped with die array, and the die array is made of high-thermal conductive metal material, the crystalline substance
Ceramic substrate is equipped with above grain array and for housing the pipe clamp of avalanche diode or pedestal for housing waveguide component,
It is characterized in that, the pipe clamp or pedestal are made of ceramic materials, the pipe clamp or pedestal are fired into ceramic substrate integral type
Metalized is done in type, the ceramic substrate bottom, and the ceramic substrate bottom after metalized is welded with the die array
Fixed, production method includes the following steps：
Step 1：Alumina powder is prepared into less than 1 micron powder；
Step 2：Organic binder bond is uniformly mixed with alumina powder, organic binder bond proportion is 5%-20%；
Step 3：Alumina slurry is injected into mould；
Step 4：Mould is put into sintering furnace and carries out preliminary static pressure sintering, preliminary static pressure sintering temperature control is at 800 DEG C；
Step 5：Demoulded after preliminary sintering, pressurizeed using plane and ensure shape, then carry out high temperature static pressure sintering, the high temperature is quiet
Sintering temperature control is pressed at 1200 DEG C -2000 DEG C；
Step 6：After the completion of sintering, injecting hole is ground smooth, ceramic substrate completes with pipe clamp or pedestal integral structure；
Step 7：Metalized is carried out to ceramic substrate bottom, ceramic substrate bottom is adhered to one layer of metallic film securely；
Step 8：Ceramic substrate and die array are welded and fixed using the metallic film.
2. the production method of the device according to claim 1 for temperature control, it is characterised in that：The aluminium oxide is selected
Any one in 93-99 aluminium oxide.
3. the production method of the device according to claim 1 for temperature control, it is characterised in that：The pipe clamp or pedestal
Reinforcing rib is equipped between side wall and the upper surface of ceramic substrate, the reinforcing rib is fired into ceramic substrate and pipe clamp integral type
Type.
4. the production method of the device according to claim 1 for temperature control, it is characterised in that：The ceramic substrate and pipe
Folder or pedestal are made of aluminium oxide ceramics.
5. the production method of the device according to claim 1 for temperature control, it is characterised in that：The semiconductor heating system
The huyashi-chuuka (cold chinese-style noodles) of cooler is equipped with multi-layered ceramic substrate, and each layer ceramic substrate is parallel to each other interval setting, and adjacent two layers ceramic substrate it
Between be equipped with die array, wherein outermost layer ceramic substrate is formed by a firing with the pipe clamp or pedestal integral type.
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| CN201610389976.1A CN106024732B (en) | 2016-05-31 | 2016-05-31 | A kind of production method of device for temperature control |
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| CN201610389976.1A CN106024732B (en) | 2016-05-31 | 2016-05-31 | A kind of production method of device for temperature control |
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| CN112993066B (en) * | 2021-04-16 | 2021-07-27 | 国开启科量子技术(北京)有限公司 | Refrigeration system for photoelectric device and manufacturing method thereof |
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| JP2015135932A (en) * | 2014-01-20 | 2015-07-27 | アイアールスペック株式会社 | Peltier cooling IC package |
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| CN104779229B (en) * | 2015-04-13 | 2017-10-03 | 哈尔滨工程大学 | A kind of chip radiator based on thermoelectric cooling principle |
| CN205645796U (en) * | 2016-05-31 | 2016-10-12 | 科大国盾量子技术股份有限公司 | A device for control by temperature change |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2323762Y (en) * | 1998-03-12 | 1999-06-16 | 王德生 | Semiconductor refrigerating device for treating cerebrovascular disease |
| JP2003101085A (en) * | 2001-09-25 | 2003-04-04 | Yamaha Corp | Thermoelectric device |
| CN1700450A (en) * | 2005-06-09 | 2005-11-23 | 华南师范大学 | Secondary Packaging Device of Avalanche Photodiode for Infrared Light Detection |
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| JP2015135932A (en) * | 2014-01-20 | 2015-07-27 | アイアールスペック株式会社 | Peltier cooling IC package |
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| CN106024732A (en) | 2016-10-12 |
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