CN105974613B - Electro-optic lumped modulator - Google Patents
Electro-optic lumped modulator Download PDFInfo
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- CN105974613B CN105974613B CN201610562556.9A CN201610562556A CN105974613B CN 105974613 B CN105974613 B CN 105974613B CN 201610562556 A CN201610562556 A CN 201610562556A CN 105974613 B CN105974613 B CN 105974613B
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- 230000000694 effects Effects 0.000 claims abstract description 21
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008520 organization Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000005265 energy consumption Methods 0.000 abstract description 12
- 238000003780 insertion Methods 0.000 abstract description 9
- 230000037431 insertion Effects 0.000 abstract description 9
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 9
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- 238000004891 communication Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0154—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using electro-optic effects, e.g. linear electro optic [LEO], Pockels, quadratic electro optical [QEO] or Kerr effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/215—Michelson type
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
本发明涉及一种电光集总调制器，包括光学结构、电光结构和电学结构；所述电光结构用于产生电光效应；所述光学结构用于根据所述电光效应产生相应的调制效果；所述电学结构用于为所述电光结构供电；所述电学结构的驱动方式为单驱动方式；所述电学结构包括电极，所述电极用于接收正向和/或反向传输的电信号。本发明的电光集总调制器，通过将集总调制器的电学结构的驱动方式改进为单驱动方式，可以将调制器的结电容减半，串联电阻加倍，可实现降低能耗、减小调制器尺寸、降低插损，以及提高对驱动电压的利用效率，并能够提升电光带宽，满足实际应用需求。
The invention relates to an electro-optical lumped modulator, comprising an optical structure, an electro-optical structure and an electrical structure; the electro-optical structure is used to generate an electro-optical effect; the optical structure is used to generate a corresponding modulation effect according to the electro-optical effect; The electrical structure is used for supplying power to the electro-optical structure; the driving mode of the electrical structure is a single driving mode; the electrical structure includes electrodes, and the electrodes are used for receiving electrical signals transmitted in forward and/or reverse directions. In the electro-optic lumped modulator of the present invention, by improving the driving mode of the electrical structure of the lumped modulator to a single driving mode, the junction capacitance of the modulator can be halved, the series resistance can be doubled, and the energy consumption and modulation can be reduced. It can reduce the size of the device, reduce the insertion loss, and improve the utilization efficiency of the driving voltage, and can improve the electro-optical bandwidth to meet the needs of practical applications.
Description
Technical field
The present invention relates to integrated opto-electronic technical field more particularly to a kind of electric light lumped modulators.
Background technique
With the development trend that current speed-raising drop is taken, mass communication and interconnection equipment update, silicon substrate transceiver system
Commercialization is had begun, but system energy consumption is high, the pressure of the infrastructure of communication, interconnection increased dramatically.Modulator be optic communication,
The significant components of transceiver in optical interconnection system, its energy consumption is only second to laser, but modulator itself Insertion Loss also increases function
Budget is consumed, so being the important tackling key problem object in the current effort for reducing energy consumption.
Electrooptic modulator is divided into lump type modulator and travelling-wave-type modulator according to whether there is end matched load.At present
The high-speed electro-optic modulator of silicon materials is travelling-wave-type, because its rate is not significantly restricted in RC constant and driving source cable
Characteristic impedance has had more than the device report of 50Gbps rate at present.However, travelling-wave-type modulator utilizes effect to driving voltage
Rate is low, haves the shortcomings that energy consumption is high, size is big, Insertion Loss is big.On the other hand, lumped modulator can more effectively utilize driving electricity
Pressure, has the advantages that low energy consumption, size is small, Insertion Loss is small, but the device electro-optical bandwidth for the silicon lumped modulator reported at present is only
It is only 15GHz or less.
Therefore, how providing one kind, low energy consumption, size is small, Insertion Loss is small, and high to the utilization efficiency of driving voltage, and
The electrooptic modulator for meeting the electro-optic bandwidth requirement in practical application becomes one of a technical problem to be solved urgently.
Summary of the invention
It cannot be taken into account for energy consumption present in existing travelling-wave-type electrooptic modulator and lumped modulator, size, Insertion Loss
Defect, the present invention proposes a kind of electric light lumped modulator, including optical texture, electro-optical structure and electricity structure；
The electro-optical structure is for generating electrooptic effect；The optical texture is used to be generated according to the electrooptic effect corresponding
Modulation effect；The electricity structure is used to power for the electro-optical structure；
The driving method of the electricity structure is single driving method；
The electricity structure includes electrode, and the electrode is used to receive positive and/or reverse transfer electric signal.
Optionally, the electro-optical structure includes PN junction.
Optionally, the type of the PN junction includes lateral knot type, inserts finger knot type and vertical junction type.
Optionally, the PN junction is silicon PN junction or germanium PN junction.
Optionally, the electro-optical structure includes the first modulation arm and the second modulation arm of electric light lumped modulator；
First modulation arm and the second modulation arm composition are electrically connected.
Optionally, the N++ polarity of first modulation arm and second modulation arm is respectively positioned in the electro-optical structure
Between；The P++ polarity of first modulation arm and second modulation arm is located at the two sides of the electro-optical structure；Described first
The N++ polar organization of modulation arm and second modulation arm is electrically connected；Or,
The P++ polarity of first modulation arm and second modulation arm is respectively positioned on the centre of the electro-optical structure；It is described
The N++ polarity of first modulation arm and second modulation arm is located at the two sides of the electro-optical structure；First modulation arm
It is electrically connected with the P++ polar organization of second modulation arm.
Optionally, described to be electrically connected as electrical series relationship.
Optionally, the optical texture includes interferometer.
Optionally, the optical texture further includes the resonant cavity combined with the interferometer.
Optionally, the type of the interferometer is Mach once moral Mach-Zehnder interferometer or Michelson
Michelson interferometer.
Electric light lumped modulator of the invention, by the way that the driving method of the electricity structure of lumped modulator is improved to single drive
Flowing mode can halve the junction capacity of modulator, and series resistance doubles, it can be achieved that reducing energy consumption, reducing modulator size, drop
Filter with low insertion loss, and the utilization efficiency to driving voltage is improved, and be able to ascend electro-optic bandwidth, meet practical application request.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is the schematic diagram of double drive electric light lumped modulator in the prior art；
Fig. 2 is the structural schematic diagram of the electric light lumped modulator of one embodiment of the invention；
Fig. 3 is the schematic top plan view of single driving electric light lumped modulator of one embodiment of the invention；
Fig. 4 a is that the Mach-Zahnder interference type list of one embodiment of the invention drives the structural representation of electric light lumped modulator
Figure；
Fig. 4 b is that the Michelson's interferometer type list of one embodiment of the invention drives the structure of electric light lumped modulator to show
It is intended to；
Fig. 5 is the electric light lumped modulator equivalent circuit diagram of one embodiment of the invention；
Wherein, CJIndicate that the capacitor of modulation arm directly generates contribution to Electro-optical Modulation；R indicates modulation arm resistance；L indicates to adjust
The inductance of arm electrode processed；C0Indicate the capacitor of the components such as pad bonding pad；
Fig. 6 is the small signal electric light S21 response diagram of the different structure electrooptic modulator of invention one embodiment.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention is explicitly described, it is clear that described embodiment is the present invention
A part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
Every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
Existing lumped modulator mostly uses dual-driving-mode as shown in Figure 1, and (PN junction in Fig. 1 is simplest lateral
Knot, Metal indicate that metal electrode, Contact indicate metallic vias), electro-optic bandwidth is only 15GHz hereinafter, being unable to satisfy
Modulation rate is higher than the practical application request application requirement of 28Gbps.Since there is lumped modulator travelling-wave modulator not had
Can effectively utilize driving voltage, the advantages that low energy consumption, size is small and Insertion Loss is small, if it is possible to promote lumped modulator
Electro-optic bandwidth, be allowed to meet application demand, then lumped modulator will be expected to substitution travelling-wave modulator, realization be greatly reduced it is logical
The purpose of the energy consumption of letter system.
Fig. 2 shows the structural schematic diagrams of the electric light lumped modulator of one embodiment of the invention；As shown in Fig. 2, described
Lumped modulator includes optical texture 10, electro-optical structure 20 and electricity structure 30；
Wherein, the electro-optical structure is for generating electrooptic effect；The optical texture is used to be produced according to the electrooptic effect
Raw corresponding modulation effect；The electricity structure is used to power for the electro-optical structure；
It is understood that above-mentioned electro-optical structure 20 is in modulator for directly generating the portion of electrooptic effect and modulation
Point, according to different electrooptic effects, modulation to phase can be shown as to the effect of light field, to the change of polarization state and
Modulation to amplitude (intensity)；Optical texture 10 is that the electrooptic effect for generating electro-optical structure 20 is changed into required modulation effect
Part, such as intensity modulated can be converted by phase-modulation, modulation can be recommended by both arms and realizes phase keying etc.；And
Electricity structure 30 is the part to power for electro-optical structure 20.
The driving method of electricity structure 30 is single driving method；
Electricity structure 30 includes electrode (not shown), and the electrode is used to receive positive and/or reverse transfer electricity
Signal.
It should be noted that the electrooptic modulator of the present embodiment is the electrode in lumped modulator namely its electricity structure
End does not set build-out resistor.
Specifically, single driving method is to be chiefly used in a kind of driving method of travelling-wave modulator in the prior art, can be incited somebody to action
The junction capacity of modulator halves, and series resistance doubles, and can guarantee that modulator has biggish electro-optic bandwidth.
Electric light lumped modulator of the invention, by the way that the driving method of the electricity structure of lumped modulator is improved to single drive
Flowing mode can halve the junction capacity of modulator, and series resistance doubles, it can be achieved that reducing energy consumption, reducing modulator size, drop
Filter with low insertion loss, and the utilization efficiency to driving voltage is improved, and be able to ascend electro-optic bandwidth, meet practical application request.
Further, as the preferred of above-described embodiment, the electro-optical structure may include PN junction；The type packet of the PN junction
It includes lateral knot type, insert finger knot type and vertical junction type.
It is understood that list driving method used by the present embodiment can be independently of modulation PN junction, i.e., above-mentioned list
Lateral knot can be used in the lumped modulator of driving method, inserts and refers to all kinds of PN electro-optical structures such as knot, vertical junction, the present invention to this not into
Row limits.
Further, as the preferred of above-described embodiment, the PN junction be chosen as silicon PN junction or germanium PN junction etc. be based on etc. from
The electro-optical structure of sub- effect of dispersion.
It should be noted that electrooptic modulator is singly driven also to be applicable to imitate based on other electric light provided by the present embodiment
Answer the modulator of (linear electro-optic effect, Kerr effect and Franz-Keldysh effect, quantum confinement Stark effect), such as niobium
Sour lithium modulator and three-five semiconductor modulator.
Fig. 3 is the schematic top plan view of single driving electric light lumped modulator of one embodiment of the invention；As shown in figure 3,
On the basis of above-described embodiment, the electro-optical structure 20 may also include the first modulation arm 21 and the second modulation arm of electrooptic modulator
22；
First modulation arm and the second modulation arm composition are electrically connected.
It should be noted that above-mentioned single driving refers to only drives two modulation arms, and two with a microwave signal source
The modulated structure of modulation arm links together the region of identical doping type (P or N).The middle section of single driving electricity structure
It should connect Dc bias (referring to the Vb in Fig. 3), but the present embodiment is also applied for the case where center is not electrically connected.Such as nothing
Dc bias is input to after being superimposed Dc bias with driving signal between two electrodes of outside (P++ of two sides in such as Fig. 3).
As shown in figure 3, as the preferred of above-described embodiment, the N+ of first modulation arm 21 and second modulation arm 22
+ polarity is respectively positioned on the centre of the electro-optical structure；The P++ polarity of first modulation arm 21 and the second modulation arm 22 is located at described
The two sides of electro-optical structure；And the N++ polar organization of the first modulation arm 21 and the second modulation arm 22 is electrically connected (preferably electricity
Series connection).
It is understood that above-mentioned first modulation arm 21 and the second modulation arm 22 can be enabled due to the symmetry of electro-optical structure
P++ polarity be respectively positioned on the centre of the electro-optical structure；The N++ polarity of first modulation arm 21 and the second modulation arm 22 is located at
The two sides of the electro-optical structure；And the P++ polar organization of the first modulation arm 21 and the second modulation arm 22 is electrically connected (preferably
Electrical series).
Further, as the preferred of above-described embodiment, optical texture 10 may include 11 (not shown) of interferometer.
On this basis, as the preferred of the present embodiment, optical texture 10 can also include combined with interferometer 11 it is humorous
Vibration 12 (not shown) of chamber.
Fig. 4 a is the Mach once moral Mach-Zehnder interference-type list driving electric light lumped modulation of one embodiment of the invention
The structural schematic diagram of device；As shown in fig. 4 a, the modulator topmost and the filament of lower part are optical texture 10a, and side is marked respectively
Two boxes for infusing RF+, RF- are electricity structures 20, and electro-optical structure is not shown in the figure.
Fig. 4 b is that the Michelson Michelson interferometer type list of one embodiment of the invention drives electric light lumped modulator
Structural schematic diagram；As shown in Figure 4 b, the filament of the modulator lower part is shown in lower section in optical texture 10b, with Fig. 4 a
The difference of optical texture 10a is that optical texture 10b is 4 port coupler parts, and two ports of bottom are respectively defeated
Enter, output port (sequence interchangeable)；It and is that three port devices are (most common shown in the optical texture 10a below Fig. 4 a
It is Y-branch coupler and multi-mode interference coupler), but also may be used using four port couplers.
Further, above-mentioned Michelson's interferometer may also include reflecting element, and the reflecting element is located at described step
The end of Ke Erxun interferometer；Wherein, the reflecting element can be photon crystal reflecting mirror or annular mirror loop mirror.
It should be noted that the Michelson's interferometer and Mach-Zehnder interferometer of above-mentioned use are existing optics knot
Structure, the present invention are not limited this.
Fig. 5 is the electric light lumped modulator equivalent circuit diagram of one embodiment of the invention；
It should be noted that the purpose of Fig. 5 is to help the electric light lumped modulation that reader more fully understands the present embodiment
The bandwidth calculation method of device, meaning can embody (series-parallel partial pressure) in following formula (2).By lumped modulator
It is knowledge that those skilled in the art should be recognized that it is in parallel with capacitor, which to be equivalent to rlc circuit, herein without repeating.
Fig. 6 is the small signal electric light S21 response diagram of the different structure electrooptic modulator of invention one embodiment.
The bandwidth analysis method for electric light lumped modulator provided by the invention is discussed in detail below with reference to Fig. 5, Fig. 6.
By taking silicon electrooptic modulator commonly laterally ties modulated structure as an example, lumped modulation brachium provided by the invention is, for example,
M=0.5mm, electrical parameter citing are as follows:
The capacitor C of the components such as pad bonding pad0=26fF；Series resistance R=12.7 Ω；The electricity of modulation arm electrode
Feel L=0.176nH, the capacitor C of modulation armJ=260fF, thus small signal electro-optic bandwidth can by following formula (1)~(4) into
Row calculates:
Wherein Z0For microwave transmission line characteristic impedance used in driving element, standard cable is Z0=50 Ω characteristic impedances, ω
For small signal modulation angular frequency, t0Time needed for being transmitted through modulation arm for light wave wave packet, H (j ω) indicate rlc circuit to electricity
Hold the voltage transfering function of C (PN junction), ΓtIndicate voltage transmission coefficient, Z as caused by Microwave Impedance mismatchlIndicate RLC electricity
Road input impedance.Frequency domain S21 (ω) indicates that under the small signal Sine Modulated electric signal modulation that frequency is ω, output optical signal exists
Frequency component at ω frequency.It is as shown in Figure 6 to calculate resulting electro-optic bandwidth.Wherein, solid line is traditional double drive electricity structure
S21 response, three dB bandwidth is about 10.7GHz；Dotted line be the present invention use single driving electricity structure (in addition to electricity structure,
His structure is constant) S21 response, since single driving can be such that resistance R doubles, junction capacity CJHalve, three dB bandwidth is extended to
17.9GHz, thus can satisfy the practical application request application requirement of 28Gbps.
It should be noted that the optical texture of the two modulators is Mach-Zehnder interferometer.Due to Michelson
Interferometer type electric light lumped modulator can it is positive in light, back through modulation arm when generate the modulation effect of accumulation, so
Only need a Mach half for zehnder type modulation arm lengths that identical modulation effect can be obtained.Chain-dotted line is that single driving electricity structure steps
The S21 of Ke Erxun interferometer type electrooptic modulator is responded, and three dB bandwidth is promoted to 23.9GHz, thus can satisfy 28Gbps's
Practical application request application requirement.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.Term " on ", "lower" etc. refer to
The orientation or positional relationship shown is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of the description present invention and simplifies
Description, rather than the device or element of indication or suggestion meaning must have a particular orientation, constructed and grasped with specific orientation
Make, therefore is not considered as limiting the invention.Unless otherwise clearly defined and limited, term " installation ", " connected ",
" connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be
Mechanical connection, is also possible to be electrically connected；It can be directly connected, two can also be can be indirectly connected through an intermediary
Connection inside element.For the ordinary skill in the art, above-mentioned term can be understood at this as the case may be
Concrete meaning in invention.
In specification of the invention, numerous specific details are set forth.Although it is understood that the embodiment of the present invention can
To practice without these specific details.In some instances, well known method, structure and skill is not been shown in detail
Art, so as not to obscure the understanding of this specification.Similarly, it should be understood that disclose in order to simplify the present invention and helps to understand respectively
One or more of a inventive aspect, in the above description of the exemplary embodiment of the present invention, each spy of the invention
Sign is grouped together into a single embodiment, figure, or description thereof sometimes.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme should all cover in the range of specification of the invention.
Claims (9)
1. a kind of electric light lumped modulator, which is characterized in that including optical texture, electro-optical structure and electricity structure；
The electro-optical structure is for generating electrooptic effect；The optical texture is used to generate corresponding adjust according to the electrooptic effect
Effect processed；The electricity structure is used to power for the electro-optical structure；
The driving method of the electricity structure is single driving method；
The electricity structure includes electrode, and the electrode is used to receive positive and/or reverse transfer electric signal；
The electro-optical structure includes the first modulation arm and the second modulation arm of electric light lumped modulator；
First modulation arm and the second modulation arm composition are electrically connected.
2. modulator according to claim 1, which is characterized in that the electro-optical structure includes PN junction.
3. modulator according to claim 2, which is characterized in that the type of the PN junction includes lateral knot type, inserts finger
Tie type and vertical junction type.
4. modulator according to claim 2, which is characterized in that the PN junction is silicon PN junction or germanium PN junction.
5. modulator according to claim 4, which is characterized in that the N+ of first modulation arm and second modulation arm
+ polarity is respectively positioned on the centre of the electro-optical structure；The P++ polarity of first modulation arm and second modulation arm is located at
The two sides of the electro-optical structure；The N++ polar organization of first modulation arm and second modulation arm is electrically connected；Or,
The P++ polarity of first modulation arm and second modulation arm is respectively positioned on the centre of the electro-optical structure；Described first
The N++ polarity of modulation arm and second modulation arm is located at the two sides of the electro-optical structure；First modulation arm and institute
The P++ polar organization for stating the second modulation arm is electrically connected.
6. modulator according to claim 5, which is characterized in that described to be electrically connected as electrical series relationship.
7. modulator according to claim 1, which is characterized in that the optical texture includes interferometer.
8. modulator according to claim 7, which is characterized in that the optical texture further includes combining with the interferometer
Resonant cavity.
9. modulator according to claim 7 or 8, which is characterized in that the type of the interferometer is Mach once moral Mach-
Zehnder interferometer or Michelson Michelson interferometer.
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| CN201610562556.9A CN105974613B (en) | 2016-07-15 | 2016-07-15 | Electro-optic lumped modulator |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103281130A (en) * | 2013-05-31 | 2013-09-04 | 上海交通大学 | Multiple frequency millimeter wave generating device based on single-drive Mach-Zehnder modulator |
| CN104330905A (en) * | 2014-11-12 | 2015-02-04 | 天津工业大学 | Two-dimensional grating coupling-based silicon-based QPSK (Quadrature Phase Shift Keying) photomodulator |
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| SG11201401800PA (en) * | 2011-10-26 | 2014-09-26 | Fujikura Ltd | Optical element and mach-zehnder optical waveguide element |
| CN103207464B (en) * | 2012-01-17 | 2017-09-08 | 上海硅通半导体技术有限公司 | A kind of electrooptical switching or optical attenuator |
| JP5413865B1 (en) * | 2012-12-27 | 2014-02-12 | 株式会社フジクラ | Optical waveguide device and optical modulator |
| US9036953B2 (en) * | 2013-03-04 | 2015-05-19 | Rwth Aachen University | Electro-optical modulator based on carrier depletion or carrier accumulation in semiconductors with advanced electrode configuration |
| CN105044931B (en) * | 2015-09-10 | 2018-10-09 | 中国科学院半导体研究所 | Silicon-based integrated difference electrooptic modulator and preparation method thereof |
| CN205844668U (en) * | 2016-07-15 | 2016-12-28 | 北京大学 | Electric light lumped modulator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103281130A (en) * | 2013-05-31 | 2013-09-04 | 上海交通大学 | Multiple frequency millimeter wave generating device based on single-drive Mach-Zehnder modulator |
| CN104330905A (en) * | 2014-11-12 | 2015-02-04 | 天津工业大学 | Two-dimensional grating coupling-based silicon-based QPSK (Quadrature Phase Shift Keying) photomodulator |
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Effective date of registration: 20240724 Address after: No. 912 Yecheng Road, Jiading Industrial Zone, Jiading District, Shanghai, 201822 Patentee after: Shanghai Ailijie Management Consulting Center (Limited Partnership) Country or region after: China Address before: 100871 No. 5, the Summer Palace Road, Beijing, Haidian District Patentee before: Peking University Country or region before: China |