CN105914252B - Ultraviolet infrared double color focus plane detector array and its performance design and preparation method - Google Patents
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- 238000013461 design Methods 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title abstract description 7
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 63
- 238000003491 array Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000004088 simulation Methods 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 8
- 230000003595 spectral effect Effects 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229960002415 trichloroethylene Drugs 0.000 claims description 6
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000006798 recombination Effects 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 3
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 3
- 238000000825 ultraviolet detection Methods 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000005672 electromagnetic field Effects 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims description 2
- 230000008676 import Effects 0.000 claims 1
- 230000002262 irrigation Effects 0.000 claims 1
- 238000003973 irrigation Methods 0.000 claims 1
- 238000004659 sterilization and disinfection Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 7
- 230000002285 radioactive effect Effects 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 9
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000002574 poison Substances 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 208000032366 Oversensing Diseases 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract
The invention discloses a kind of ultraviolet infrared double color focus plane detector array and its performance design and preparation method.The structure single-chip integration Pt/CdS ultraviolet focal-planes and InSb infrared focus planes, Pt/CdS ultraviolet focal-planes are subject to front incident, because infra-red radiation can reach InSb absorbed layers through CdS, are detected while such that it is able to realize ultraviolet radioactive and infra-red radiation.The ultraviolet service bands with InSb infrared double color focus plane arrays of Pt/CdS are 300~550nm and 2.9~5.7 μm.It is an advantage of the current invention that in the ultraviolet infrared double color focus plane array structures with InSb of Pt/CdS ultraviolet focal-plane and infrared focus plane apart from close so as to confocal, and ultraviolet infrared photosensitive first consistency from top to bottom is conducive to the design of optical system.The present invention suffers from highly important meaning for the optimization design of actual two-color device and preparation.
Description
Technical field
The present invention relates to setting for Pt/CdS Schottky section ultraviolet detector device and InSb photovoltaic type infrared spectrum detecting devices
Meter and performance measurement, specifically refer to carry out ultraviolet band and infrared waves based on Pt/CdS ultraviolet focal-planes and InSb infrared focus planes
The dual-color detection method of section.
Background technology
The ability of multi-color detection has critically important status in advanced seeker system, by the signal for obtaining different-waveband
The temperature and feature of object in search coverage can accurately be distinguished.Compared to monochromatic probe, multi-color detection provides various dimensions
Contrast and device sensitivity can be improved with basis signal Processing Algorithm.Such as, double color focus plane detector array can be processed
Two radiation signals of wave band remove the interference informations such as background clutter and sunshine and leave behind target object.Double color focus plane battle array
Row are widely used in earth planetary remote sensing, astronomical and military affairs etc. because effective signal-to-noise ratio is higher than monochromatic focus planardetector array
Field.
Ultraviolet radioactive wave band is 0.01 μm~0.4 μm, and the sun is then very strong UV source.For different wave length
Ultraviolet transmissivity in an atmosphere is also different, and ultraviolet radioactive of the wavelength less than 280nm is all absorbed by air substantially, and this
The ultraviolet radioactive of wave band is also referred to as non-solar-blind band.The ultraviolet of 300nm~400nm wave bands can reach ground, quilt through air
Referred to as ultraviolet window.Military field ultraviolet detection technology is based primarily upon the detection of ultraviolet window near the ground.
For aerial object (in uniform Lyα Forest), block by the ultraviolet radioactive of atmospheric scattering simultaneously
And itself sending infra-red radiation, then ultraviolet/infrared double color focus plane array is by simultaneously to ultraviolet radioactive signal and infra-red radiation
Signal is processed to detect or track the object, so as to discrimination is substantially improved.The service band of CdS be 300nm~
500nm, including ultraviolet window and a part of visible light wave range, simultaneously because infra-red radiation has transmission well in CdS materials
Property, so the material has in the application of double-color detector having great advantage.The larger Pt and CdS of work function is chosen simultaneously to be formed
Schottky section, and as the core of ultraviolet detector.Because InSb materials have high-quantum efficiency, Gao Ling in middle-infrared band
The advantage and large scale array InSb focal plane arrays (FPA)s manufacture craft of sensitivity are ripe, so infrared detection members are then red using InSb
Outer focal plane arrays (FPA).
The present invention is ultraviolet with InSb infrared double color focus plane arrays by designing Pt/CdS, and by ISE-TCAD softwares
The spectral response and cross-talk of the numerical computations devices, so as to verify ultraviolet and IR dual spectral detection method feasibility.
The content of the invention
The invention discloses a kind of ultraviolet and infrared double color focus plane detector and its performance design and preparation method.Pass through
Numerical Design obtains the spectral response corresponding to the ultraviolet structures and the structure with InSb infrared double color focus plane arrays of Pt/CdS
And service band, demonstrate the feasibility of the device dual-color detection.
A kind of ultraviolet infrared double color focus plane detector array, including n-type substrate InSb absorbed layers 4, SiO2Barrier layer 3, n
Type CdS absorbed layers 2, p-type InSb absorbed layers 5, the structure of described ultraviolet infrared double color focus plane detector array is：In N-shaped
Substrate InSb absorbed layers 4 are followed successively by SiO above2Barrier layer 3, N-shaped CdS absorbed layers 2 and Pt films 1, ultraviolet focal-plane each spy
Survey the electrode 6 corresponding to device pixel to be located on Pt films 1, the public electrode 7 of ultraviolet focal-plane is located on N-shaped CdS absorbed layers 2；
It is p-type InSb absorbed layers 5 at the back side of n-type substrate InSb absorbed layers 4, the corresponding electrode 8 of infrared focal plane detector pixel is located at p
On type InSb absorbed layers 5, the public electrode 9 of infrared focus plane is located on n-type substrate InSb absorbed layers 4；
The described thickness of n-type substrate InSb absorbed layers 4 is dn, arsenic doping concn be Nn；
The described thickness of p-substrate InSb absorbed layers 5 is dp, boron doping concentration be Np；
The described thickness of CdS absorbed layers 2 is dcds, arsenic doping concn be Ncds；
The described thickness of Pt films 1 is dpt。
The performance design and preparation method of double-color detector are as follows：
1) .n types substrate InSb absorbed layers 4 are above SiO2Barrier layer 3, and 2 is N-shaped CdS absorbed layers, the surface of Pt films 1
Electrode of the electrode 6 corresponding to ultraviolet focal-plane each detector pixel, 7 is the public electrode of ultraviolet focal-plane, p-type InSb
The electrode on the surface of absorbed layer 5,8 is the corresponding electrode of infrared focal plane detector pixel, and 9 is the public electrode of infrared focus plane.
2) thickness of n-type substrate InSb absorbed layers 4 described in is dn, arsenic doping concn be Nn, the p-substrate InSb absorbed layers
Thickness is dp, boron doping concentration be Np, while p areas and n areas are respectively mounted electrode 6 and 7 to measure output current signal；
3) thickness of Pt films 1 described in is dpt, the thickness of CdS absorbed layers 2 is dcds, arsenic doping concn be Ncds, while
Pt films and CdS absorbed layers are respectively mounted electrode 8,9 to measure output current signal.
4) builds physical model.Using finite time-domain calculus of finite differences (FDTD) and FInite Element (FEM) combined simulation come to device
Part carries out two-dimensional numerical analysis.During FDTD method analog electromagnetic fields, the database of various material parameters is first set up, such as
The corresponding electrical conductivity of each frequency, relative dielectric constant and relative permeability etc., then carry out grid and draw to the device architecture for designing
Point, bond material parameter and dispersive model calculate the magnetic distribution in target area and are converted into photoproduction and carry using FDTD methods
Flow sub- concentration distribution.During FEM method analog device electrology characteristics, with reference to photoproduction carrier concentration distribution results, lead
Enter the parameters such as mobility, band gap, absorption coefficient, the dielectric constant of material, and according to classical drift domination, SRH it is compound and
The basic physical model such as auger recombination calculating device zero electric current on the lower side.
5) it is T that sets environment temperature, and a length of λ of incident light wave of the ultraviolet detection pixel of centre, luminous power are incided in front
Perseverance is P, and the incident light of ultraviolet band can be absorbed by CdS absorbed layers, and infrared light then can be through CdS absorbed layers by InSb absorbed layers
Absorb, the photoresponse rate in the case of being irradiated by numerical simulation different wave length incident light can obtain spectral response and cross-talk.
6) is ultraviolet according to Pt/CdS first and InSb infrared double color focus plane arrays scale prepares corresponding photo etched mask
Version, then uses plasma enhanced chemical vapor deposition method (PECVD) growth thickness for 1 μm by substrate of N-shaped InSb materials
The SiO of left and right2, and then using physical vapor transport (PVT) in SiO2Superficial growth thickness is 5 μm or so of N-shaped CdS monocrystalline.
7) is cleaned CdS surfaces and the oxide layer on surface is removed using hydrochloric acid solution by acetone and methyl alcohol, is then used
Ultraviolet photolithographic technology and etching technics make CdS mesa structures and Schottky section window, then use radiofrequency magnetron sputtering technology
The Pt membrane electrodes of high transmission rate are grown to form Schottky contacts, and obtain ultraviolet focal-plane array by stripping technology.
8) device is placed on clean glass plate (InSb substrates are upward) by, and appropriate wax is placed simultaneously in device surrounding
Heating, wax to be melted enters after bottom device, rinses unnecessary wax with trichloro ethylene, and disappear using ether propanol flushing
Poison.N-shaped InSb substrates are polished it is thinning, and carry out ion implanting formed p+Area, then by photoetching process, etching work
Skill, thermal evaporation method and stripping technology make InSb mesa structures and electrode.Finally heated glass plate and use trichloro ethylene
Pt/CdS is ultraviolet and InSb infrared double color focus plane array devices to obtain to rinse out the wax of adhesion.
It is an advantage of the invention that：In the ultraviolet infrared double color focus plane array structures with InSb of Pt/CdS ultraviolet focal-plane with it is red
Apart from close so as to confocal, and ultraviolet infrared photosensitive first consistency from top to bottom is conducive to the design of optical system for outer focal plane.It is double-colored
Ultraviolet focal-plane is in infrared focus plane upper strata in focal plane arrays (FPA), and CdS absorbed layers are several for the incident light of infrared band
It is transparent.The design of mesa structure reduces the area of photosensitive region so as to effectively reduce dark current and cross-talk.Pass through
The ultraviolet feasibilities with InSb infrared double color focus plane array dual-color detections of the result verification of numerical simulation Pt/CdS, are actual
The preparation and optimization of device provide theoretical direction.
Brief description of the drawings
Fig. 1 is the ultraviolet schematic cross-sections with InSb infrared double color focus plane arrays of Pt/CdS.Wherein 1 is Pt films, and 2 are
N-shaped CdS absorbed layers, 3 is SiO2Barrier layer, 4 is N-shaped InSb absorbed layers, and 5 is p-type InSb collecting layers, and 6 is that ultraviolet focal-plane is every
Electrode corresponding to individual detector pixel, 7 is the public electrode of ultraviolet focal-plane, and 8 is infrared focal plane detector pixel correspondence
Electrode, 9 for infrared focus plane public electrode.
Fig. 2 is that Pt/CdS is ultraviolet normalizes spectral response with InSb infrared double color focus planes array.
Fig. 3 is the ultraviolet cross-talks with InSb infrared double color focus plane arrays of Pt/CdS.
Specific embodiment
Specific embodiment of the invention is elaborated below in conjunction with the accompanying drawings：
1. it is ultraviolet with InSb infrared double color focus plane array two dimensional models, CdS absorber thicknesses d that Pt/CdS is builtcdsSet
It is 4.5 μm, doping concentration NcdsIt is 1.6 × 10cm-3, Pt film thicknesses dptIt is 8nm, ultraviolet photosurface length LUVIt is 25 μm.
InSb N-shaped absorber thicknesses dnIt is 9.2 μm, N-shaped doping concentration NnIt is 1015cm-3, p-type doping concentration NpIt is 1017cm-3.It is infrared
Detection pixel photosurface length LIRIt is 15 μm, and the focal plane arrays (FPA) cycle is 50 μm, sees Fig. 1.
2. physical model is built.Distribution of the photoproduction carrier concentration in simulated domain is calculated using FDTD methods, then will
This result is coupled in the simulation of electricity part, and the electrical properties simulation process of device is combined according to drift domination, SRH
The basic physical mechanism such as model, auger recombination model, radiation recombination model and dispersive model carries out numerical computations, final to obtain electricity
Stream and the macroscopic physical quantity such as voltage research and analyse the performance and further optimum structural parameter of device.
3. it is T=77K, incident optical power P=0.0001W/cm to set ambient temperature-2, lambda1-wavelength from 300nm change
To 5.9 μm, the ultraviolet normalization spectral response (figures with InSb infrared double color focus plane arrays of Pt/CdS are obtained by numerical simulation
2) with cross-talk (Fig. 3).
4. the ultraviolet service bands with InSb infrared double color focus plane arrays of result of study display Pt/CdS for 300~
550nm (ultraviolet) and 2.9~5.7 μm (infrared).In ultraviolet band, device has peak response in a length of 500nm of incident light wave
Rate is 0.0403A/W, and in infrared band, incident light wave has peak response rate 1.07A/W when a length of 5.1 μm.By Numerical-Mode
Plan demonstrates the ultraviolet double-colored spies that ultraviolet band and infrared band can be carried out with InSb infrared double color focus planes array of Pt/CdS
Survey.
5. ultraviolet and InSb infrared double color focus plane arrays the geometries of Pt/CdS are determined according to numerical simulation result, it is first
Corresponding lithography mask version is first prepared according to the scale of the double color focus plane array, is then used by substrate of N-shaped InSb materials
Plasma enhanced chemical vapor deposition method (PECVD) growth thickness is 1 μm or so of SiO2, and then use physical vapor transport
Method (PVT) is in SiO2Superficial growth thickness is 5 μm or so of N-shaped CdS monocrystalline.
6. CdS surfaces are cleaned by acetone and methyl alcohol and the oxide layer on surface is removed using hydrochloric acid solution, then used
Ultraviolet photolithographic technology and etching technics make CdS mesa structures and Schottky section window, then use radiofrequency magnetron sputtering technology
The Pt membrane electrodes of high transmission rate are grown to form Schottky contacts, and obtain ultraviolet focal-plane array by stripping technology.
7. device is placed on clean glass plate (InSb substrates are upward), places appropriate wax in device surrounding and add
Heat, wax to be melted enters after bottom device, rinses unnecessary wax with trichloro ethylene, and disappear using ether propanol flushing
Poison.N-shaped InSb substrates are polished it is thinning, and carry out ion implanting formed p+Area, then by photoetching process, etching work
Skill, thermal evaporation method and stripping technology make InSb mesa structures and electrode.Finally heated glass plate and use trichloro ethylene
Pt/CdS is ultraviolet and InSb infrared double color focus plane array devices to obtain to rinse out the wax of adhesion.
Claims (3)
1. a kind of ultraviolet infrared double color focus plane detector array, including n-type substrate InSb absorbed layer (4) SiO2Barrier layer (3), n
Type CdS absorbed layers (2), p-type InSb absorbed layer (5), it is characterised in that：
The structure of described ultraviolet infrared double color focus plane detector array is：In n-type substrate InSb absorbed layers (4) above successively
It is SiO2Barrier layer (3), N-shaped CdS absorbed layers (2) and Pt films (1), the electricity corresponding to ultraviolet focal-plane each detector pixel
On Pt films (1), the public electrode (7) of ultraviolet focal-plane is on N-shaped CdS absorbed layers (2) for pole (6)；In n-type substrate
InSb absorbed layers (4) back side is p-type InSb absorbed layers (5), and the corresponding electrode of infrared focal plane detector pixel (8) is positioned at p-type
On InSb absorbed layers (5), the public electrode (9) of infrared focus plane is on n-type substrate InSb absorbed layers (4).
2. a kind of performance based design of a kind of ultraviolet infrared double color focus plane detector array based on described in claim 1,
It is characterized in that method and step is as follows：
1) builds physical model, and two Dimension Numerical Value is carried out to device using finite time-domain calculus of finite differences and FInite Element combined simulation
Analysis, during FDTD method analog electromagnetic fields, first sets up the database of various material parameters, such as the corresponding electricity of each frequency
Conductance, relative dielectric constant and relative permeability, then carry out mesh generation to the device architecture for designing, bond material parameter and
Dispersive model calculates the magnetic distribution in target area and is converted into photoproduction carrier concentration and is distributed using FDTD methods；
During FEM method analog device electrology characteristics, with reference to photoproduction carrier concentration distribution results, import material mobility,
Band gap, absorption coefficient, dielectric constant parameter, and be combined and the basic physics mould of auger recombination according to classical drift domination, SRH
The electricity on the lower side of type calculating device zero；
2) it is T that sets environment temperature, and a length of λ of incident light wave of the ultraviolet detection pixel of centre is incided in front, and luminous power perseverance is
P, the incident light of ultraviolet band can be absorbed by CdS absorbed layers, and infrared light can then be inhaled through CdS absorbed layers by InSb absorbed layers
Receive, the photoresponse rate in the case of being irradiated by numerical simulation different wave length incident light can obtain spectral response and cross-talk.
3. it is a kind of to prepare a kind of method of ultraviolet infrared double color focus plane detector array as claimed in claim 1, its feature
It is method and step as follows：
1) is ultraviolet according to Pt/CdS first and InSb infrared double color focus plane arrays scale prepares corresponding lithography mask version,
Then the SiO that plasma enhanced chemical vapor deposition method growth thickness is 1 μm is used by substrate of N-shaped InSb materials2, and then
Using physical vapor transport in SiO2Superficial growth thickness is 5 μm of N-shaped CdS monocrystalline；
2) is cleaned CdS surfaces and the oxide layer on surface is removed using hydrochloric acid solution by acetone and methyl alcohol, then using ultraviolet
Photoetching technique and etching technics make CdS mesa structures and Schottky section window, are then grown using radiofrequency magnetron sputtering technology
The Pt membrane electrodes of high transmission rate obtain ultraviolet focal-plane array to form Schottky contacts by stripping technology；
3) be placed on device on clean glass plate by, and InSb substrates upward, are placed appropriate wax and heated in device surrounding,
Wax to be melted enters after bottom device, rinses unnecessary wax with trichloro ethylene, and use ether propanol irrigation and disinfection；It is right
N-shaped InSb substrates be polished it is thinning, and carry out ion implanting formed p+Area, then steamed by photoetching process, etching technics, heat
Forwarding method and stripping technology make InSb mesa structures and electrode；Finally heated glass plate and rinsed out using trichloro ethylene viscous
Pt/CdS is ultraviolet and InSb infrared double color focus plane array devices to obtain for attached wax.
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| CN109216485B (en) * | 2017-06-29 | 2020-11-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Infrared detector and preparation method thereof |
| CN107579123A (en) * | 2017-08-31 | 2018-01-12 | 华中科技大学 | A kind of antimony selenide thin-film solar cells and preparation method thereof |
| CN108489923B (en) * | 2018-01-30 | 2020-08-07 | 中国科学院上海技术物理研究所 | Infrared gas imaging focal plane based on double-sensitive-element differential signal and imaging method |
| CN108321244B (en) * | 2018-03-26 | 2024-03-29 | 厦门三优光电股份有限公司 | Ultraviolet photoelectric detector for ultraviolet and infrared double-color detection and preparation method thereof |
| CN110836861A (en) * | 2019-10-28 | 2020-02-25 | 西北工业大学 | Long-wave infrared bicolor imaging monitoring system for SF6 gas leakage |
| CN111653630B (en) * | 2020-04-29 | 2021-08-24 | 西北工业大学 | Manufacturing method of double-color focal plane detector and double-color image obtaining method |
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| CN101894831A (en) * | 2009-05-20 | 2010-11-24 | 中国科学院半导体研究所 | Ultraviolet-infrared dual band detector and manufacturing method thereof |
| CN102117842A (en) * | 2009-12-30 | 2011-07-06 | 上海欧菲尔光电技术有限公司 | Infrared focal plane detector packaging window and manufacturing method thereof |
| CN205810842U (en) * | 2016-06-12 | 2016-12-14 | 中国科学院上海技术物理研究所 | A kind of ultraviolet and infrared double color focus plane detector array |
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| JP2011192873A (en) * | 2010-03-16 | 2011-09-29 | Irspec Corp | Wide-wavelength-band photodetector array |
| CN103915525A (en) * | 2014-04-08 | 2014-07-09 | 上海电力学院 | Infrared focal plane detector capable of improving photoelectric conversion performance |
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| CN102117842A (en) * | 2009-12-30 | 2011-07-06 | 上海欧菲尔光电技术有限公司 | Infrared focal plane detector packaging window and manufacturing method thereof |
| CN205810842U (en) * | 2016-06-12 | 2016-12-14 | 中国科学院上海技术物理研究所 | A kind of ultraviolet and infrared double color focus plane detector array |
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