CN105827224B - A kind of high pressure simulation integrated switching circuit - Google Patents
A kind of high pressure simulation integrated switching circuit Download PDFInfo
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- CN105827224B CN105827224B CN201610150613.2A CN201610150613A CN105827224B CN 105827224 B CN105827224 B CN 105827224B CN 201610150613 A CN201610150613 A CN 201610150613A CN 105827224 B CN105827224 B CN 105827224B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The present invention provides a kind of high pressure simulation integrated switching circuit, including the first, second simulation sub switch in parallel, the first simulation sub switch includes the first N-shaped DMOS pipe, the second N-shaped DMOS pipe and the first driving circuit, the source electrode of the first N-shaped DMOS pipe connects the source electrode of the second N-shaped DMOS pipe, drain electrode connection circuit input end, grid connects the first driving circuit, and the drain electrode of the second N-shaped DMOS pipe connects circuit output end, and grid connects the first driving circuit；The second simulation sub switch includes the first p-type DMOS pipe, the second p-type DMOS pipe, the second driving circuit and third driving circuit；The drain electrode of drain electrode the second p-type DMOS pipe of connection of the first p-type DMOS pipe, source electrode connect circuit input end, and grid connects the second driving circuit, and the source electrode of the second p-type DMOS pipe connects circuit output end, and grid connects third driving circuit.The control circuit of the present invention is not connected to directly with signal path, and rail-to-rail output may be implemented in strong antijamming capability, switching circuit of the invention.
Description
Technical field
The invention belongs to IC design manufacturing fields, more particularly to a kind of high pressure simulation integrated switching circuit.
Background technology
Analog switch is a kind of unit common in integrated circuit design.Common low-voltage simulation switch is usually used
Cmos transmission gate, but in high voltage application fields such as batteries of electric automobile monitorings, the design of analog switch was once blank out.
The design of high voltage analog switch is to start gradually to enrich after integrated circuit BCD techniques occur.Such as number of patent application
CN201110418181.6 is two-way with one kind that common connection back-to-back is realized in BCD techniques and BCD process devices
High voltage analog switch.But there are two important defects for the invention：1, since the presence of resistance R2 makes signal path and control
Access processed is connected directly, and easily causes the crosstalk of signal；2, the switching circuit can not achieve rail-to-rail output.
Based on the above, a kind of simulation integrated switching circuit of novel high voltage rail to-rail output is provided and is necessary.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of high pressure simulation integrated switch electricity
Road easily causes the crosstalk of signal for solving simulation integrated switching circuit in the prior art, and can not achieve rail-to-rail defeated
The problem of going out.
In order to achieve the above objects and other related objects, the present invention provides a kind of high pressure simulation integrated switching circuit, including：
First simulation sub switch and the second simulation sub switch in parallel, wherein the first simulation sub switch includes the first N-shaped DMOS
Pipe, the second N-shaped DMOS pipe and the first driving circuit, the source electrode of the first N-shaped DMOS pipe connect the source of the second N-shaped DMOS pipe
Pole, drain electrode connection circuit input end, grid connect the first driving circuit, and the drain electrode connection circuit of the second N-shaped DMOS pipe is defeated
Outlet, grid connect the first driving circuit；It is described second simulation sub switch include the first p-type DMOS pipe, the second p-type DMOS pipe,
Second driving circuit and third driving circuit；The drain electrode of drain electrode the second p-type DMOS pipe of connection of the first p-type DMOS pipe, source
Pole connects circuit input end, and grid connects the second driving circuit, and the source electrode of the second p-type DMOS pipe connects circuit output end,
Grid connects third driving circuit.
A kind of preferred embodiment of high pressure simulation integrated switching circuit as the present invention, first driving circuit include height
Press metal-oxide-semiconductor, the first current-controlled switch, the second current-controlled switch, the first diode and the second diode, wherein described the
The source electrode of the anode connection high-voltage MOS pipe of one diode, cathode connect the first current source, the first N-shaped DMOS pipe and the second N-shaped
The grid of DMOS pipe, the cathode of the second diode and the second current-controlled switch, the first electricity of drain electrode connection of the high-voltage MOS pipe
Flow control switch, grid connect the source electrode of the anode of the second diode, the first N-shaped DMOS pipe and the second N-shaped DMOS pipe to realize
Signal path is isolated with control access, and current drain switchs when first current-controlled switch is as switch conduction, described
Current drain switch when second current-controlled switch is as switch OFF.
Further, the protection diode that it is breakdown reverse voltage 10V or more that second diode, which is selected, for opening
Close the drain charge of release when switching to OFF state by ON state the first N-shaped DMOS pipe, the second N-shaped DMOS pipe.
A kind of preferred embodiment of high pressure simulation integrated switching circuit as the present invention, the first driving circuit selection are
The logic control signal driving circuit of 5V.
A kind of preferred embodiment of high pressure simulation integrated switching circuit as the present invention, second driving circuit include the
Two current sources, first resistor, third current-controlled switch and third diode, the switch for controlling the first p-type DMOS pipe,
In, the drain electrode of the grid, third current-controlled switch of anode the first p-type DMOS pipe of connection of the third diode and the first electricity
The first end of resistance, cathode connects the source electrode of the first p-type DMOS pipe and the second end of first resistor, the third current control are opened
The source electrode of pass connects the second current source.
A kind of preferred embodiment of high pressure simulation integrated switching circuit as the present invention, the third driving circuit include the
Three current sources, the 4th current source, the 5th current source, the 4th current-controlled switch, second resistance and boosting DMOS pipe and the four or two
Pole pipe, the switch for controlling the second p-type DMOS pipe, wherein the drain electrode of the 4th current-controlled switch connects the 4th electric current
Source, the grid of the second p-type DMOS pipe and second resistance first end, source electrode connects third current source, the of the second resistance
Two ends connect the source electrode of the 5th current source, the cathode of the 4th diode and DMOS pipe of boosting, and the anode of the 4th diode is even
Connect the source electrode of the grid and the second p-type DMOS pipe of addressing boosting DMOS pipe.
As described above, the high pressure simulation integrated switching circuit of the present invention, has the advantages that：
1) control circuit of the invention is not connected to directly with signal path, strong antijamming capability；
2) rail-to-rail output may be implemented in switching circuit of the invention.
Description of the drawings
Fig. 1 is shown as a kind of embodiment structure schematic diagram of the high pressure simulation integrated switching circuit of the present invention.
Fig. 2 is shown as the another embodiment structural schematic diagram of the high pressure simulation integrated switching circuit of the present invention.
Component label instructions
N-DMOS sub-switch first simulate sub switch
P-DMOS sub-switch second simulate sub switch
M1 the first N-shaped DMOS pipes
M2 the second N-shaped DMOS pipes
M3 the first p-type DMOS pipes
M4 the second p-type DMOS pipes
Gate Driver the second driving circuits of A
Gate Driver B third driving circuits
Mp1 high-voltage MOS pipes
The first current-controlled switches of Mn1
The second current-controlled switches of Mn2
The first diodes of D1
The second diodes of D2
The first current sources of Ibias1
D3 third diodes
R1 first resistors
The second current sources of Ibias2
Ibias3 third current sources
The 4th current sources of Ibias4
The 5th current sources of Ibias5
Mn3 third current-controlled switches
The 4th current-controlled switches of Mn4
R2 second resistances
Mp2 boosting DMOS pipes
The 4th diodes of D4
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Fig. 2.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in illustrating then
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Figure 1, the present embodiment provides a kind of high pressure simulation integrated switching circuits, including：First analog submodule in parallel
The simulation sub switch p-DMOS of switch n-DMOS sub-switch and second sub-switch, wherein first analog submodule is opened
It includes the first N-shaped DMOS pipe M1, the second N-shaped DMOS pipe M2 and the first driving circuit to close n-DMOS sub-switch, and described first
The source electrode of N-shaped DMOS pipe M1 connects the source electrode of the second N-shaped DMOS pipe M2, drain electrode connection circuit input end, and grid connection first is driven
The drain electrode of dynamic circuit, the second N-shaped DMOS pipe M2 connects circuit output end, and grid connects the first driving circuit；Described second
It includes the first p-type DMOS pipe M3, the second p-type DMOS pipe M4, the second driving circuit to simulate sub switch p-DMOS sub-switch
Gate Driver A and third driving circuit Gate Driver B；The drain electrode of the first p-type DMOS pipe M3 connects the second p-type
The drain electrode of DMOS pipe M4, source electrode connect circuit input end, and grid connects the second driving circuit Gate Driver A, the 2nd p
The source electrode of type DMOS pipe M4 connects circuit output end, and grid connects third driving circuit Gate Driver B.
As shown in Figure 1, as an example, first driving circuit includes high-voltage MOS pipe MP1, the first current-controlled switch
Mn1, the second current-controlled switch Mn2, the first diode D1 and the second diode D2, wherein the first diode D1 is just
Pole connects the source electrode of high-voltage MOS pipe MP1, and cathode connects the first current source Ibias1, the first N-shaped DMOS pipe M1 and the second N-shaped
The grid of DMOS pipe M2, the cathode of the second diode D2 and the second current-controlled switch Mn2 drain electrodes, the high-voltage MOS pipe MP1's
Drain electrode the first current-controlled switch Mn1 of connection, grid connect anode, the first N-shaped DMOS pipe M1 and the 2nd n of the second diode D2
The source electrode of type DMOS pipe M2 is to realize being isolated for signal path and control access, and the first current-controlled switch Mn1 is as opening
Current drain switchs when closing conducting, current drain switch when the second current-controlled switch Mn2 is as switch OFF.At this
In embodiment, the protection diode that it is breakdown reverse voltage 10V or more that the second diode D2, which is selected, for switching by opening
State switchs to release when OFF state the drain charge of the first N-shaped DMOS pipe M1, the second N-shaped DMOS pipe M2.
As shown in Figure 1, as an example, the second driving circuit Gate Driver A include the second current source Ibias2,
First resistor R1, third current-controlled switch Mn3 and third diode D3, the switch for controlling the first p-type DMOS pipe M3,
In, the drain electrode of the grid, third current-controlled switch Mn3 of the first p-type DMOS pipe M3 of anode connection of the third diode D3
And the first end of first resistor R1, cathode connects the source electrode of the first p-type DMOS pipe M3 and the second end of first resistor R1, described
The source electrode of third current-controlled switch Mn3 connects the second current source Ibias2.
As shown in Figure 1, as an example, the third driving circuit Gate Driver B include third current source Ibias3,
4th current source Ibias4, the 5th current source Ibias5, the 4th current-controlled switch Mn4, second resistance R2 and boosting DMOS pipe
Mp2 and the 4th diode D4, the switch for controlling the second p-type DMOS pipe M4, wherein the 4th current-controlled switch Mn4
Drain electrode connect the 4th current source Ibias4, the grid of the second p-type DMOS pipe M4 and the first end of second resistance R2, source electrode connection
The second end of third current source Ibias3, the second resistance R2 connect the 5th current source Ibias5, the 4th diode D4 it is negative
The source electrode of pole and boosting DMOS pipe Mp2, the anode connection of the 4th diode D4 address the DMOS pipe Mp2 that boosts grid and
The source electrode of second p-type DMOS pipe M4.
In a specific implementation process, the high pressure simulation integrated switching circuit concrete structure and principle of the present embodiment are such as
Under：
The present embodiment devises two non-rail-to-rail output to realize the rail-to-rail output of high pressure simulation integrated switch
Sub switch first simulates the simulation sub switch p-DMOS of sub switch n-DMOS sub-switch and second sub-switch.Wherein
The maximum output voltage ranging from 0V to (HVDD-Vth1) V of one simulation sub switch n-DMOS sub-switch, and the second simulation
(Vth1, Vth3 are respectively the first N-shaped DMOS to maximum output ranging from Vth3 to the HVDD of sub switch p-DMOS sub-switch
The threshold voltage of pipe M1 and third N-shaped DMOS pipe).Two sub- switch in parallel can be achieved with to the voltage gamut rail of 0V to HVDD
To-rail output.
The first N-shaped DMOS pipe M1 that the primary path of first simulation sub switch n-DMOS sub-switch is connected by source electrode and
Second N-shaped DMOS pipe M2 composition, this is that a kind of common DMOS protects connection type back-to-back.First diode D1 and high pressure
Metal-oxide-semiconductor MP1 source electrodes are connected, the source electrode phase of the grid of high-voltage MOS pipe MP1 and the first N-shaped DMOS pipe M1, the second N-shaped DMOS pipe M2
Even to realize being isolated for signal path and control access.First diode D1 and high-voltage MOS pipe MP1 is for controlling the first N-shaped
The conducting shutdown of DMOS pipe M1, the second N-shaped DMOS pipe M2.First diode D1 is Zener diode, and high-voltage MOS pipe MP1 is height
It is current source, electric current when the first current-controlled switch Mn1 is switch conduction to press symmetrical MOS transistor, the first current source Ibias1
It releases switch, current drain switch when the second current-controlled switch Mn2 is switch OFF.Second diode D2 is a reversed
The protection diode of breakdown voltage 10V or more.For release when the switch switchs to OFF state by ON state the first N-shaped DMOS pipe M1 and
The drain charge of second N-shaped DMOS pipe M2.HVDD is the ceiling voltage in circuit, the maximum value of general desirable input voltage.
As logic control signal S [x]=5V, the first current-controlled switch Mn1 conducting, the first current source Ibias1 via
First diode D1, high-voltage MOS pipe MP1, the first current-controlled switch Mn1 to GND, the first diode D1 reverse breakdowns at this time,
The sum of its reverse breakdown pressure drop and the sources high-voltage MOS pipe MP1 gate voltage control the first N-shaped DMOS pipe M1, the second N-shaped DMOS pipe M2 is led
It is logical, to the first simulation sub switch n-DMOS sub-switch conductings；
VGS,M1=VD1,reverse+VSG,Mp1
As logic control signal S [x]=0V, the first current-controlled switch Mn1 shutdowns, the second current-controlled switch Mn2
Conducting, the first current source Ibias1 electric currents flow through the second current-controlled switch Mn2 to GND, due to the presence of the second diode D2,
First N-shaped DMOS pipe M1, the second N-shaped DMOS pipe M2 gate source voltage pressure difference be 0, the first simulation sub switch n-DMOS at this time
Sub-switch is turned off.
The primary path of second simulation sub switch p-DMOS sub-switch by drain the first connected p-type DMOS pipe M3 and
Second p-type DMOS pipe M4 compositions, the first p-type DMOS pipe M3 are controlled by the second driving circuit Gate Driver A, the second p-type
DMOS pipe M4 is controlled by third driving circuit Gate Driver B.Second driving circuit Gate Driver A are by the second current source
Ibias2, first resistor R1, third current-controlled switch Mn3 are constituted, the switch for controlling the first p-type DMOS pipe M3.Third
Diode D3 is protection diode.Third driving circuit Gate Driver B are by current source third current source Ibias3, the 4th electricity
Stream source Ibias4, the 5th current source Ibias5, the 4th current-controlled switch Mn4, second resistance R2 and the boosting of p-type DMOS pipe
DMOS pipe Mp2 compositions.4th diode D4 is for protecting boosting DMOS pipe Mp2 grid source the two poles of the earth.
As logic control signal S [x]=5V, third current-controlled switch Mn3 conducting, the second current source Ibias2 is the
Pressure drop VR1, the first p-type DMOS pipe M3 conductings are generated on one resistance R1：
Vth,M3≤VR1=R1×Ibias2≤5V
When S [x]=5V, the 4th current-controlled switch Mn4 conductings, since third current source Ibias3 is more than the 4th current source
The ource electric current of Ibias4, the 5th current source Ibias5 of part flow to the ends B by second resistance R2, to generate pressure drop by the ends Vfb
So that the second p-type DMOS pipe M4 conductings；
VGS,M4=VSG,Mp2-VR2≈-4V
When controlling signal S [x]=0V, third current-controlled switch Mn3 turns off VR1=0V, therefore the first p-type DMOS pipe
M3 is turned off.Simultaneously as S [x]=0V, the 4th current-controlled switch Mn4 shutdowns, the 4th current source Ibias4 electric currents pass through second
Resistance R2 flow direction boosting DMOS pipe Mp2, generating pressure drop ensures the second p-type DMOS pipe M4 shutdowns：
VGS,M4=VSG,Mp2+VR2＞ 0
The high pressure simulation integrated switching circuit of the present embodiment has the following advantages：
1) control circuit is not connected to directly with signal path, strong antijamming capability；
2) rail-to-rail output may be implemented in the switch.
Embodiment 2
As shown in Fig. 2, the present embodiment provides a kind of high pressure simulation integrated switching circuit, basic structure such as embodiment 1,
In, first driving circuit selects the logic control signal driving circuit for 5V.
Be illustrated in figure 2 novel rail-to-rail output high pressure simulation integrated switch simplifies design, wherein the second analog submodule is opened
Close p-DMOS sub-switch sub switchs and shown in FIG. 1 identical, the first simulation sub switch n-DMOS sub-switch
Main signal path is still the first N-shaped DMOS pipe M1, the second N-shaped DMOS pipe M2, but dispenses its driving circuit, only with patrolling for 5V
Control signal driving is collected, its output voltage range is 0V to (5-Vth1) V at this time.
The design still uses the first simulation sub switch n-DMOS sub-switch and the second simulation sub switch p-DMOS
The mode of sub-switch parallel connections realizes rail-to-rail output.The circuit advantage weakness analysis for the design of embodiment 1：
Advantage:First simulation sub switch n-DMOS sub-switch control circuits simplify, lower power consumption.
Disadvantage：When realizing the design of analog switch low on-resistance, since energy is connected than p-type DMOS pipe in N-type DMOS pipe
Power is strong, and conducting resistance is small, when under identical chip area using Fig. 1 designs, the conducting resistance smaller that entirely switchs.
As described above, the high pressure simulation integrated switching circuit of the present invention, has the advantages that：
1) control circuit of the invention is not connected to directly with signal path, strong antijamming capability；
2) rail-to-rail output may be implemented in switching circuit of the invention.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (6)
1. a kind of high pressure simulation integrated switching circuit, which is characterized in that including：First simulation sub switch and the second simulation in parallel
Sub switch, wherein the first simulation sub switch includes the first N-shaped DMOS pipe, the second N-shaped DMOS pipe and the first driving circuit,
The source electrode of the first N-shaped DMOS pipe connects the source electrode of the second N-shaped DMOS pipe, drain electrode connection circuit input end, grid connection the
The drain electrode of one drive circuit, the second N-shaped DMOS pipe connects circuit output end, and grid connects the first driving circuit；Described
Two simulation sub switchs include the first p-type DMOS pipe, the second p-type DMOS pipe, the second driving circuit and third driving circuit；Described
The drain electrode of drain electrode the second p-type DMOS pipe of connection of one p-type DMOS pipe, source electrode connect circuit input end, the second driving of grid connection
The source electrode of circuit, the second p-type DMOS pipe connects circuit output end, and grid connects third driving circuit.
2. high pressure simulation integrated switching circuit according to claim 1, it is characterised in that：First driving circuit includes
High-voltage MOS pipe, the first current-controlled switch, the second current-controlled switch, the first diode and the second diode, wherein described
The source electrode of the anode connection high-voltage MOS pipe of first diode, cathode connect the first current source, the first N-shaped DMOS pipe and the second N-shaped
The drain electrode of the grid of DMOS pipe, the cathode of the second diode and the second current-controlled switch, the drain electrode connection of the high-voltage MOS pipe
First current-controlled switch, the anode of grid the second diode of connection, the source electrode of the first N-shaped DMOS pipe and the second N-shaped DMOS pipe
To realize being isolated for signal path and control access, current drain is opened when first current-controlled switch is as switch conduction
It closes, current drain switch when second current-controlled switch is as switch OFF.
3. high pressure simulation integrated switching circuit according to claim 2, it is characterised in that：Second diode is selected
The protection diode of breakdown reverse voltage 10V or more, for switch OFF state is switched to by ON state when release the first N-shaped DMOS pipe,
The drain charge of second N-shaped DMOS pipe.
4. high pressure simulation integrated switching circuit according to claim 1, it is characterised in that：First driving circuit is selected
For the logic control signal driving circuit of 5V.
5. high pressure simulation integrated switching circuit according to claim 1, it is characterised in that：Second driving circuit includes
Second current source, first resistor, third current-controlled switch and third diode, the switch for controlling the first p-type DMOS pipe,
Wherein, the drain electrode and first of the grid, third current-controlled switch of anode the first p-type DMOS pipe of connection of the third diode
The first end of resistance, cathode connect the source electrode of the first p-type DMOS pipe and the second end of first resistor, the third current control
The source electrode of switch connects the second current source.
6. high pressure simulation integrated switching circuit according to claim 1, it is characterised in that：The third driving circuit includes
Third current source, the 4th current source, the 5th current source, the 4th current-controlled switch, second resistance and boosting DMOS pipe and the 4th
Diode, the switch for controlling the second p-type DMOS pipe, wherein the 4th electricity of drain electrode connection of the 4th current-controlled switch
Stream source, the grid of the second p-type DMOS pipe and second resistance first end, source electrode connect third current source, the second resistance
Second end connects the source electrode of the 5th current source, the cathode of the 4th diode and DMOS pipe of boosting, the anode of the 4th diode
Connect the grid of the boosting DMOS pipe and the source electrode of the second p-type DMOS pipe.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610150613.2A CN105827224B (en) | 2016-03-16 | 2016-03-16 | A kind of high pressure simulation integrated switching circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610150613.2A CN105827224B (en) | 2016-03-16 | 2016-03-16 | A kind of high pressure simulation integrated switching circuit |
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| Publication Number | Publication Date |
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| CN105827224A CN105827224A (en) | 2016-08-03 |
| CN105827224B true CN105827224B (en) | 2018-09-25 |
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| CN201610150613.2A Active CN105827224B (en) | 2016-03-16 | 2016-03-16 | A kind of high pressure simulation integrated switching circuit |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109150141B (en) * | 2018-10-23 | 2023-09-15 | 上海艾为电子技术股份有限公司 | Analog switch circuit and switch control method and device thereof |
| CN109039315B (en) * | 2018-10-29 | 2023-09-22 | 上海艾为电子技术股份有限公司 | Analog switch circuit for adjusting turn-on time |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7956653B1 (en) * | 2009-05-04 | 2011-06-07 | Supertex, Inc. | Complementary high voltage switched current source integrated circuit |
| US8228109B2 (en) * | 2010-06-28 | 2012-07-24 | Freescale Semiconductor, Inc. | Transmission gate circuitry for high voltage terminal |
| CN102437843B (en) * | 2011-11-30 | 2013-10-16 | 中国科学院微电子研究所 | High Voltage Switching Circuit |
| CN103166611A (en) * | 2011-12-14 | 2013-06-19 | 赵恩海 | Two-way analog switching circuit |
| US9876494B2 (en) * | 2014-03-13 | 2018-01-23 | Maxim Integrated Products, Inc. | High voltage switching output driver |
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