CN105826457A - Laser white light emitting device for lighting or display - Google Patents
Laser white light emitting device for lighting or display Download PDFInfo
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- CN105826457A CN105826457A CN201610329920.7A CN201610329920A CN105826457A CN 105826457 A CN105826457 A CN 105826457A CN 201610329920 A CN201610329920 A CN 201610329920A CN 105826457 A CN105826457 A CN 105826457A
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- white light
- emitting device
- light emitting
- transparent fluorescent
- fluorescent ceramic
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- 239000000919 ceramic Substances 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000843 powder Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005286 illumination Methods 0.000 claims description 16
- 238000005245 sintering Methods 0.000 claims description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000012467 final product Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 230000005284 excitation Effects 0.000 abstract description 7
- 230000007423 decrease Effects 0.000 abstract description 5
- 239000000741 silica gel Substances 0.000 abstract description 4
- 229910002027 silica gel Inorganic materials 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 12
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000009877 rendering Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a laser white light emitting device for lighting or display. The laser white light emitting device comprises a heat sink substrate, a semiconductor laser chip, and transparent fluorescent ceramic. The semiconductor laser chip emits blue light, is fixed on the heat sink substrate, and is packaged by the transparent fluorescent ceramic. As the transparent fluorescent ceramic is combined with the chip of an excitation light source, decline in luminous efficiency of fluorescent powder and silica gel or failure of a light source due to device heating is avoided. Heat resistance of the transparent fluorescent ceramic enables the device to work in a high-current and high-temperature environment according to the application requirement, so decline in the output power and electro-optic conversion efficiency of the device when the device works at high temperature or at high injection current is avoided.
Description
Technical field
The present invention relates to a kind of for illuminating or the laser white light emitting device of display, belong to illumination and display field.
Background technology
Illumination originates in the electric filament lamp of Edison invented, has invented the electric light sources such as low-pressure sodium lamp, fluorescent lamp, high voltage mercury lamp, metal halide lamp, high-pressure mercury lamp, three-color fluorescent lamp, compact fluorescent lamp, HF lamp without electrodes and LED the most successively.The generally evaluation criterion of light source has the parameters such as efficiency, luminous flux, color rendering index, colour temperature, wherein its power saving capability of the high low reaction of light source efficiency, LED white light source has the feature such as high energy efficiency, long-life, is acknowledged as the green illumination light source after electric filament lamp, daylight lamp.
At present at lighting field, many employing LEDs do excitation source, excite corresponding fluorescent material to obtain white light source.White light source based on light emitting diode has four major programmes: the first scheme is to excite yellow fluorescent powder with blue light-emitting diode, fluorescent material is transmitting gold-tinted under the exciting of blue light, mix with the some blue light appeared again, being presented white light by complementary color principle, white light color rendering index prepared by the program changes greatly with temperature and operating current than relatively low and white light parameter；First scheme is directly to be mixed into white light by red-green-blue light emitting diode, owing to the efficiency of three light emitting diodes, luminous power are with asynchronous changes of parameter such as injection current, temperature, times, therefore it is required that the highest control circuit；The third scheme is to be excited red-green-blue fluorescent material by ultraviolet or near ultraviolet light emitting diode, owing to people's vision is insensitive to ultraviolet or black light, the color of this white light is only determined by fluorescent material, therefore program color rendering index is high and white light parameter is more stable, 4th kind of scheme is to do light source activation yellow fluorescent powder with blue laser, fluorescent material excites lower transmitting gold-tinted at the laser instrument of blue light, then mixes with the some blue light appeared, complementary color principle present white light.
In above these four scheme, being all that light source activation fluorescent material produces white light, the luminous shortcoming of excitated fluorescent powder has: 1, the fluorescent material decay that at high temperature works long hours is the most serious；2, the fluorescent material decay of different colours is inconsistent, and after using a period of time, light source easily produces color drift；3, fluorescent material makes all to be used in mixed way with silica gel, and silica gel xanthochromia under long-time high temperature causes light efficiency to decline.The most not using light-emitting phosphor is one of the most maximum technological difficulties.
Summary of the invention
It is an object of the invention to provide a kind of for illuminating or the laser white light emitting device of display, this laser white light emitting device uses transparent fluorescent ceramic to replace light-emitting phosphor, thus obtain white light source, there is high energy efficiency, high light flux and high thermal stability, therefore, it is possible to fluorescent material decay causes light source fails when avoiding high temperature.
What the present invention provided is used for illumination or the laser white light emitting device of display, including heat sink substrate, semiconductor laser chip and transparent fluorescent ceramic；
Described semiconductor laser chip lasing blue light；
Described semiconductor laser chip is fixed in described heat sink substrate；
Described semiconductor laser chip is packaged by described transparent fluorescent ceramic.
In above-mentioned laser white light emitting device, described semiconductor laser chip is welded in described heat sink substrate；
Described heat sink substrate is made up of aluminum, copper, aluminium nitride or aluminium oxide.
In above-mentioned laser white light emitting device, the exiting surface of described transparent fluorescent ceramic can be curved surface, such as sphere.
In above-mentioned laser white light emitting device, the exiting surface plating anti-reflection film of described transparent fluorescent ceramic, to improve light emission rate, reduces the scattering of exiting surface；
The incidence surface of described transparent fluorescent ceramic plates anti-reflection film and reflectance coating successively, i.e. plates two membranes on described incidence surface, and the effect of described anti-reflection film is to increase laser instrument and enters light rate, and the effect of described reflectance coating is to prevent white light reflection, improves white light light emission rate；
The non-exiting surface of described transparent fluorescent ceramic and non-incidence surface plating total reflection film, the most described transparent fluorescent ceramic plates described total reflection film with the faying face of described heat sink substrate, to reduce white light loss, improves white light light emission rate.
In above-mentioned laser white light emitting device, the molecular formula of described transparent fluorescent ceramic is Y3Al5O12:xCe3+, wherein, x is the number between 0～0.05, such as 0.03.
In above-mentioned laser white light emitting device, described transparent fluorescent ceramic is prepared according to the method comprised the steps:
Ceramic material powder and sintering aid are sintered and get final product；
Described ceramic material powder is Al2O3、Y2O3And CeO2；
Described sintering aid is MgO and SiO2In at least one.
In above-mentioned laser white light emitting device, described sintering includes vacuum-sintering and the annealing carried out successively；
The temperature of described vacuum-sintering is 1730～1800 DEG C, and temperature retention time is 5～30 hours, and vacuum is 10-3～10-5Pa；
The condition of described annealing is: be incubated 5～40 hours under conditions of 1200～1500 DEG C, then furnace cooling.
The consumption of described sintering aid is the 0～1% of the gross mass of described ceramic material powder, such as 1%；
Described Al2O3, described Y2O3With described CeO2Mol ratio be Y according to molecular formula3Al5O12:xCe3+Middle element al, the stoichiometric proportion of Y and Ce are calculated.
Laser white light emitting device of the present invention can make in accordance with the following steps:
Described semiconductor laser chip is fixedly welded in heat sink substrate, the transparent fluorescent ceramic of sintering preparation is carried out coating film treatment, then described semiconductor laser chip is packaged by the transparent fluorescent ceramic after plated film, and be fixed in described heat sink substrate, i.e. obtain described laser white light emitting device.
Described semiconductor laser chip, by exciting the transparent fluorescent ceramic after plated film, can make transparent fluorescent ceramic produce white light.
Transparent fluorescent ceramic is also protection scope of the present invention in the application made in the laser white light emitting device of illumination or display.
What the present invention provided is used for illumination or the laser white light emitting device of display, the semiconductor laser utilizing excitation wavelength to be positioned at blue light replaces existing light emitting diode as excitation source, in order to excite transparent fluorescent ceramic to make it emit white light, its advantage is mainly manifested in following aspect:
1, semiconductor laser chip is easier to realize high power and the output of high electro-optical efficiency, and the raising of core devices performance will result directly in the raising of prepared white light source performance.
2, transparent fluorescent ceramic is combined by the present invention with the chip of excitation source, it is to avoid fluorescent material and silica gel cause decline or the light source fails of luminous efficiency because of device heating；If according to application needs, the heat resistance of transparent fluorescent ceramic makes device be operated in high electric current high temperature environment, it is to avoid device output power and the decline of electro-optical efficiency when high temperature or high injection current work.
3, transparent fluorescent ceramic is combined by the present invention with the chip of excitation source, and the heat-resistant stability of transparent fluorescent ceramic makes the power of laser white light devices improve.
4, it is easy to shaping due to the hot spot of semiconductor laser, even can be coupled into optical fiber output, so which can be used to produce the solid-state white device with specific use.
Accompanying drawing explanation
Fig. 1 is to make the present invention for illumination or the flow chart of the laser white light emitting device of display.
Fig. 2 is that the present invention is for illumination or the transparent fluorescent ceramic schematic diagram of the laser white light emitting device of display.
Fig. 3 is that the present invention is for illumination or the structural representation of the laser white light emitting device of display.
Fig. 4 is that the present invention is for illumination or the luminous light shape schematic diagram of the laser white light emitting device white light source of display.
Fig. 5 is that the present invention is for illumination or the spectral distribution curve figure of the laser white light emitting device of display.
In figure, each labelling is as follows:
1 transparent fluorescent ceramic, 2 go out light antireflective coating, 3 enter light antireflective coating, 4 enter light total reflection film layer, 5 heat sink substrate combine total reflection film layer, 6 heat sink substrate, 7 semiconductor laser chips, 8 laser white light devices light emission directions.
Detailed description of the invention
Experimental technique used in following embodiment if no special instructions, is conventional method.
Material used in following embodiment, reagent etc., if no special instructions, the most commercially obtain.
Fig. 1 is to prepare for illumination or the flow chart of the laser white light emitting device of display, is prepared according to the flow process shown in Fig. 1:
Prepare transparent fluorescent ceramic:
Accurately weigh Al2O3、Y2O3And CeO2And be fully ground, wherein, mol ratio CeO2、Y2O3、Al2O3Mol ratio be 18:291:5 (wherein x=0.03).Adding sintering aid MgO in ground powder body, its quality consumption is the 1% of total raw material powder body, it is then 10 in vacuum-4Carrying out vacuum-sintering under conditions of Pa, sintering temperature is 1780 DEG C, and temperature retention time is 20 hours；Last insulation at 1400 DEG C is annealed for 25 hours, and furnace cooling i.e. obtains transparent fluorescent ceramic Y3Al5O12:xCe3+, x=0.03.
Transparent fluorescent ceramic is carried out coating film treatment:
The exiting surface of transparent fluorescent ceramic 1 is plated anti-reflection film, obtaining light antireflective coating 2, incidence surface plates successively into light antireflective coating 3 and enters light total reflection film layer 4, non-go out light and incidence surface plating total reflection film obtain total reflection film layer, i.e. heat sink substrate combines total reflection film layer 5, as shown in Figure 2.
The semiconductor laser chip 7 solder (tin cream etc.) that excitation wavelength is positioned at blue light is welded in heat sink substrate 6, again the transparent fluorescent ceramic 1 after coating film treatment is fixed on heat sink substrate (by aluminium nitride substrate. other high heat-conductings such as aluminum oxide substrate or copper base are made) on 6, and noise spectra of semiconductor lasers chip 7 realizes encapsulation, the exiting surface making transparent fluorescent ceramic is sphere, i.e. obtain the present invention for illuminating or the laser white light emitting device of display, as shown in Figure 3.
The present invention prepare for illumination or display laser white light emitting device, during use, semiconductor laser excite transparent fluorescent ceramic produce white light, as shown in Figure 4.
The integrating sphere measurement result of laser white light emitting device of the present invention is as shown in table 1.
Table 1 laser white light emitting device integrating sphere measurement data
By the data in table 1 it can be seen that for current industry main flow white light emitting device, use the advantage that the white light obtained by the laser white light emitting device of the present invention has high energy efficiency, high light flux and high thermal stability.
The spectral distribution graph of laser white light emitting device of the present invention is as it is shown in figure 5, by this figure it can be seen that the emission spectrum seriality obtained by using the white light of the present invention is good, color rendering properties is good.
By above-mentioned analysis it can be seen that the white light that laser white light emitting device of the present invention produces has the feature of high energy efficiency, high light flux and high thermal stability.
Particular embodiments described above; the purpose of the present invention, technical scheme and beneficial effect are further described; it is it should be understood that; the foregoing is only the specific embodiment of the present invention; it is not limited to the present invention; all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, should be included within the scope of the present invention.
Claims (8)
1. the laser white light emitting device being used for illumination or display, it is characterised in that: described excited white light light-emitting device includes heat sink substrate, semiconductor laser chip and transparent fluorescent ceramic；
Described semiconductor laser chip lasing blue light；
Described semiconductor laser chip is fixed in described heat sink substrate；
Described semiconductor laser chip is packaged by described transparent fluorescent ceramic.
Laser white light emitting device the most according to claim 1, it is characterised in that: described semiconductor laser chip is welded in described heat sink substrate；
Described heat sink substrate is made up of aluminum, copper, aluminium nitride or aluminium oxide.
Laser white light emitting device the most according to claim 1 and 2, it is characterised in that: the exiting surface of described transparent fluorescent ceramic is curved surface.
4. according to the laser white light emitting device according to any one of claim 1-3, it is characterised in that: the exiting surface plating anti-reflection film of described transparent fluorescent ceramic；
The incidence surface of described transparent fluorescent ceramic plates anti-reflection film and reflectance coating successively；
The non-exiting surface of described transparent fluorescent ceramic and non-incidence surface plating total reflection film.
5. according to the laser white light emitting device according to any one of claim 1-4, it is characterised in that: the molecular formula of described transparent fluorescent ceramic is Y3Al5O12:xCe3+, wherein, x is the number between 0～0.5, but x is not zero.
Laser white light emitting device the most according to claim 5, it is characterised in that: described transparent fluorescent ceramic is prepared according to the method comprised the steps:
Ceramic material powder and sintering aid are sintered and get final product；
Described ceramic material powder is Al2O3、Y2O3And CeO2；
Described sintering aid is MgO and SiO2In at least one.
Laser white light emitting device the most according to claim 6, it is characterised in that: described sintering includes vacuum-sintering and the annealing carried out successively；
The temperature of described vacuum-sintering is 1730～1800 DEG C, and temperature retention time is 5～30 hours, and vacuum is 10-1～10-4Pa；
The condition of described annealing is: be incubated 5～40 hours under conditions of 1200～1500 DEG C, then furnace cooling.
8. transparent fluorescent ceramic is in the application made in the laser white light emitting device of illumination or display；
The molecular formula of described transparent fluorescent ceramic is Y3Al5O12:xCe3+, wherein, x is the number between 0～0.05, but x is not zero.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610329920.7A CN105826457B (en) | 2016-05-18 | 2016-05-18 | For the laser white light emitting device for illuminating or showing |
| PCT/CN2016/094605 WO2017197794A1 (en) | 2016-05-18 | 2016-08-11 | Laser white light emitting apparatus for lighting or display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610329920.7A CN105826457B (en) | 2016-05-18 | 2016-05-18 | For the laser white light emitting device for illuminating or showing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105826457A true CN105826457A (en) | 2016-08-03 |
| CN105826457B CN105826457B (en) | 2018-01-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610329920.7A Active CN105826457B (en) | 2016-05-18 | 2016-05-18 | For the laser white light emitting device for illuminating or showing |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105826457B (en) |
| WO (1) | WO2017197794A1 (en) |
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| WO2017197794A1 (en) * | 2016-05-18 | 2017-11-23 | 中国人民大学 | Laser white light emitting apparatus for lighting or display |
| CN107732648A (en) * | 2016-08-11 | 2018-02-23 | 广州市新晶瓷材料科技有限公司 | LASER Light Source method for packing based on aluminium nitride ceramics |
| CN107726084A (en) * | 2016-08-11 | 2018-02-23 | 广州市新晶瓷材料科技有限公司 | Flashlight with new pattern laser light source |
| CN107726056A (en) * | 2016-08-11 | 2018-02-23 | 广州市新晶瓷材料科技有限公司 | The preparation method of high colour gamut laser white light source |
| CN107726055A (en) * | 2016-08-11 | 2018-02-23 | 广州市新晶瓷材料科技有限公司 | White light LASER Light Source method for packing |
| CN107859883A (en) * | 2016-09-22 | 2018-03-30 | 广州市新晶瓷材料科技有限公司 | A kind of laser white light source device |
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| CN108374989A (en) * | 2016-10-13 | 2018-08-07 | 广州达森灯光股份有限公司 | Stimulated light converts the Adjustable head lamp of planar medium light source |
| CN108374991A (en) * | 2016-10-13 | 2018-08-07 | 广州达森灯光股份有限公司 | Adjustable head lamp based on glass tunable laser source |
| CN108666405A (en) * | 2017-03-27 | 2018-10-16 | 广州市新晶瓷材料科技有限公司 | A kind of laser white light devices and its implementation |
| WO2019136831A1 (en) * | 2018-01-10 | 2019-07-18 | 深圳光峰科技股份有限公司 | Wavelength conversion apparatus and light source therefor |
| CN110165545A (en) * | 2019-05-06 | 2019-08-23 | 江苏稳润光电科技有限公司 | A kind of high power laser light device and preparation method thereof |
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| WO2017197794A1 (en) | 2017-11-23 |
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