CN105810629B - Supporting table, chip bonding method and device - Google Patents
Supporting table, chip bonding method and device Download PDFInfo
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- CN105810629B CN105810629B CN201610172852.8A CN201610172852A CN105810629B CN 105810629 B CN105810629 B CN 105810629B CN 201610172852 A CN201610172852 A CN 201610172852A CN 105810629 B CN105810629 B CN 105810629B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of supporting table, chip bonding method and device, supporting table is used to support underlay substrate, and underlay substrate includes the second area for attaching circuit board to be bound and the first area in addition to second area, supporting table include：First support portion of corresponding first area, the supporting surface of the first support portion can be contacted with first area with support substrate substrate；Second support portion of corresponding second area, relative motion can occur with the first support portion for the second support portion so as to switch between the first state and a second state, wherein, when in first state, the supporting surface of the supporting surface of second support portion and the first support portion is located in Different Plane, when in the second state, the supporting surface of the second support portion and the supporting surface of the first support portion are in the same plane.Technical scheme of the present invention can solve the problems, such as that existing display device generates the COG Mura of light leakage form under L0 states.
Description
Technical field
The present invention relates to the manufacture craft of display device more particularly to a kind of supporting table, chip bonding method and devices.
Background technology
Fig. 1 is the schematic cross-section of liquid crystal display panel in the prior art, as shown in Figure 1, liquid crystal display panel mainly wraps
Include glass substrate 10, PCB (Printed Circuit Board, printed circuit board) 11, IC (Integrated Circuit, collection
Into circuit board) 12 etc., generally (Bonding) is bound using COG (Chip On Glass, the chip being fixed on glass substrate)
Mode, and pass through ACF (Anisotropic Conductive adhesive Film, anisotropy conductiving glue) 13 by glass base
Plate 10 is connected with IC12.
Traditional COG bindings technique mainly includes：Glass substrate 10 cleans, polarizer sheet sticking, ACF13 attaching, COG precompressed,
The technical process such as COG this pressure, FPC (flexible PCB) 14 are attached, PCB11 is attached.Wherein, it is COG sheets to play main function
Pressure, this pressure of COG are act as：Particle in ACF13 is compressed between the electrode of IC12 and glass substrate 10, simultaneously will
ACF13 is hardened, so as to which IC12 and glass substrate 10 be linked together.
As shown in Fig. 2, the prior art is when carrying out this pressure of COG, since the hardening temperature of ACF is 140 DEG C or more,
In order to avoid the ACF13 that is pasted between IC12 and glass substrate 10 before high-temperature pressurizing is carried out using joint tool 16 first quilt
It hardens and binding exception occurs, the temperature of the supporting table 15 of lower part needs the hardening temperature less than ACF.If on the other hand glass
If the temperature difference of 10 upper and lower part of substrate is bigger, glass substrate 10 can be distorted phenomenon, therefore, generally by the branch of lower part
The temperature setting of platform 15 is supportted at 80 DEG C or so.In this way, when carrying out this pressure of COG, the joint tool 16 above IC12 is with 145
DEG C high-temperature pressurizing, and the temperature of the supporting table 15 of lower part is about at 80 DEG C or so, due to joint tool 16 and supporting table 15
There are the temperature difference, the temperature difference will also occur in glass substrate 10 and IC12, as shown in figure 3, ACF13 and IC12 is with more swollen than glass substrate 10
Swollen state is hardened, and when temperature drops to room temperature after this pressure, inflated IC12 will generate more contractions than glass substrate 10, such as
Shown in Fig. 4, due to the shrinkage bigger of IC12, the bending of part is generated with U directions, in the process, to having near IC12
The liquid crystal arrangement state of effect display area affects, and the display device under L0 states is caused the COG Mura of light leakage form occur
(hot spot).
Invention content
The technical problem to be solved in the present invention is to provide a kind of supporting table, chip bonding method and devices, can solve existing
There are the COG Mura that display device leads to the problem of light leakage form under L0 states.
In order to solve the above technical problems, the embodiment of the present invention offer technical solution is as follows：
On the one hand, a kind of supporting table is provided, is used to support underlay substrate, the underlay substrate includes attaching circuit to be bound
The second area of plate and the first area in addition to the second area, the supporting table include：
First support portion of the corresponding first area, the supporting surface of first support portion can be with the first area
It contacts to support the underlay substrate；
With first support portion phase can occur for the second support portion of the corresponding second area, second support portion
To movement so as to switch between the first state and a second state, wherein, when in first state, second support portion
The supporting surface of supporting surface and first support portion is located in Different Plane, when in the second state, second support portion
Supporting surface and first support portion supporting surface it is in the same plane.
Further, first support portion is made of multiple mutually independent supporting blocks, and second support portion is by one
A above supporting block composition, the supporting block of first support portion are identical with the support block size of second support portion.
Further, it further includes：
Lifting structure, for second support portion to be driven to be transported on the direction of the supporting surface of the first support portion
It is dynamic.
Further, the lifting structure includes：
Supporting rod is used to support second support portion；
Driving motor, for the supporting rod to be driven to be moved upwards in the side of the supporting surface perpendicular to the first support portion.
The embodiment of the present invention additionally provides a kind of chip bonding device, including supporting table as described above.
Further, described device further includes：
Above the supporting table, the joint tool of corresponding second area, the joint tool is used for treating binding electricity
The area of the contact surface of road plate contact is not less than the area of the second area.
Further, described device further includes：
Temperature control module, for when being fixed in this pressure of chip on glass substrate, controlling at first support portion
In the first preset temperature, second support portion is controlled to be in the second preset temperature, wherein, the first preset temperature is less than each to different
Property conducting resinl hardening temperature, the second preset temperature be not less than anisotropy conductiving glue hardening temperature；
Motion module, for attach need to be bound circuit board underlay substrate be placed on the first support portion before, profit
Second support portion is controlled to be in first state with lifting structure；The underlay substrate for needing to be bound circuit board in attaching is placed on
After on first support portion, the joint tool is controlled to move down until the contact surface and circuit board contacts to be bound, together
When the second support portion is controlled to be move upwardly until second support portion supporting surface contacted with the underlay substrate.
Further, the first preset temperature is 80 DEG C, and the second preset temperature is 145 DEG C.
The embodiment of the present invention additionally provides a kind of chip bonding method, applied to chip bonding device as described above, institute
The method of stating includes：
Second support portion is controlled to be in first state, while first support portion is controlled to be in the first default temperature
Degree controls second support portion to be in the second preset temperature, wherein, the first preset temperature is hard less than anisotropy conductiving glue
Change temperature, the second preset temperature is not less than the hardening temperature of anisotropy conductiving glue；
The underlay substrate that attaching is needed to be bound to circuit board is placed on the first support portion；
The joint tool is controlled to move down up to the contact surface and circuit board contacts to be bound, while controls second
Support portion is move upwardly until that the supporting surface of second support portion is contacted with the underlay substrate.
Further, it will attach and need to be further included before the underlay substrate for being bound circuit board is placed on the first support portion：
Clean underlay substrate；
Anisotropy conductiving glue band is pasted onto on the second area of underlay substrate；
Circuit board to be bound is attached on the anisotropy conductiving glue band.
The embodiment of the present invention has the advantages that：
In said program, supporting table includes the first support portion and the second support portion, and the supporting surface of the first support portion can
It is contacted with attaching the region except circuit to be bound with support substrate substrate, the second support portion corresponds to the area for attaching circuit to be bound
Domain can switch between the first state and a second state, wherein, when in first state, the supporting surface of the second support portion
It is located in Different Plane with the supporting surface of the first support portion, when in the second state, the supporting surface of the second support portion and first
The supporting surface of support portion is in the same plane.In this way before COG this pressure is carried out, the first support portion is heated to be 80 DEG C of left sides
The right side, the second support portion are heated to be 145 DEG C or so, and the second support portion is not in contact with underlay substrate, the first support portion support substrate
Substrate since the second support portion is not in contact with underlay substrate, will not apply temperature, ACF will not be hardened, keep away to ACF
Exempt from the ACF before COG this pressures are carried out first to be hardened and binding occurs extremely.When carrying out this pressure of COG, the second support portion and first
Relative motion occurs for support portion, is in contact with ACF, ACF is hardened, realize the binding of circuit to be bound.
Description of the drawings
Fig. 1 is the schematic cross-section of prior art liquid crystal display panel；
Fig. 2 is the schematic diagram that the prior art carries out this pressure of COG；
Fig. 3 is the schematic diagram that IC and glass substrate expand at high temperature in the prior art；
Fig. 4 is the schematic diagram shunk under the room temperature of IC and glass substrate after high temperature in the prior art；
Fig. 5 is the schematic diagram that the embodiment of the present invention carries out this pressure of COG；
Fig. 6 is the floor map of supporting table of the embodiment of the present invention.
Reference numeral
10 glass substrate 11PCB 12IC 13ACF 14FPC
15 supporting table, 16 joint tool, 17 first support portion, 18 second support portion
Specific embodiment
To make the embodiment of the present invention technical problems to be solved, technical solution and advantage clearer, below in conjunction with
Drawings and the specific embodiments are described in detail.
The embodiment of the present invention provides a kind of supporting table, chip bonding method and device, can solve existing display device
The COG Mura of light leakage form are led to the problem of under L0 states.
Embodiment one
The present embodiment provides a kind of supporting tables, are used to support underlay substrate, and the underlay substrate, which includes attaching, treats binding electricity
The second area of road plate and the first area in addition to the second area, the supporting table include：
First support portion of the corresponding first area, the supporting surface of first support portion can be with the first area
It contacts to support the underlay substrate；
With first support portion phase can occur for the second support portion of the corresponding second area, second support portion
To movement so as to switch between the first state and a second state, wherein, when in first state, second support portion
The supporting surface of supporting surface and first support portion is located in Different Plane, when in the second state, second support portion
Supporting surface and first support portion supporting surface it is in the same plane.
In the present embodiment, supporting table includes the first support portion and the second support portion, and the supporting surface of the first support portion can
It is contacted with attaching the region except circuit to be bound with support substrate substrate, the second support portion corresponds to the area for attaching circuit to be bound
Domain can switch between the first state and a second state, wherein, when in first state, the supporting surface of the second support portion
It is located in Different Plane with the supporting surface of the first support portion, when in the second state, the supporting surface of the second support portion and first
The supporting surface of support portion is in the same plane.In this way before COG this pressure is carried out, the first support portion is heated to be 80 DEG C of left sides
The right side, the second support portion are heated to be 145 DEG C or so, and the second support portion is not in contact with underlay substrate, the first support portion support substrate
Substrate since the second support portion is not in contact with underlay substrate, will not apply temperature, ACF will not be hardened, keep away to ACF
Exempt from the ACF before COG this pressures are carried out first to be hardened and binding occurs extremely.When carrying out this pressure of COG, the second support portion and first
Relative motion occurs for support portion, is in contact with ACF, ACF is hardened, you can realize the binding of circuit to be bound.
In specific embodiment, the first support portion is made of multiple mutually independent supporting blocks, the second support portion by one with
On supporting block composition, the supporting block of the first support portion is identical with the support block size of the second support portion.
It is possible to further drive the second support portion in the side of the supporting surface perpendicular to the first support portion by lifting structure
It moves upwards, supporting table further includes：
Lifting structure, for second support portion to be driven to be transported on the direction of the supporting surface of the first support portion
It is dynamic.
In specific embodiment, the lifting structure includes：
Supporting rod is used to support second support portion；
Driving motor, for the supporting rod to be driven to be moved upwards in the side of the supporting surface perpendicular to the first support portion.
Embodiment two
A kind of chip bonding device is present embodiments provided, including supporting table as described above.
Further, described device further includes：
Above the supporting table, the joint tool of corresponding second area, the joint tool is used for treating binding electricity
The area of the contact surface of road plate contact is not less than the area of the second area, in this way when carrying out this pressure of COG, joint tool energy
It is enough fully to apply pressure to circuit board to be bound.
Further, described device further includes：
Temperature control module, for when being fixed in this pressure of chip on glass substrate, controlling at first support portion
In the first preset temperature, second support portion is controlled to be in the second preset temperature, wherein, the first preset temperature is less than each to different
Property conducting resinl hardening temperature, the second preset temperature be not less than anisotropy conductiving glue hardening temperature；
Motion module, for attach need to be bound circuit board underlay substrate be placed on the first support portion before, profit
Second support portion is controlled to be in first state with lifting structure；The underlay substrate for needing to be bound circuit board in attaching is placed on
After on first support portion, the joint tool is controlled to move down until the contact surface and circuit board contacts to be bound, together
When the second support portion is controlled to be move upwardly until second support portion supporting surface contacted with the underlay substrate.
In this way before COG this pressure is carried out, the second support portion is not in contact with underlay substrate, the first support portion support substrate
Substrate since the second support portion is not in contact with underlay substrate, will not apply temperature, ACF will not be hardened, keep away to ACF
Exempt from the ACF before COG this pressures are carried out first to be hardened and binding occurs extremely.When carrying out this pressure of COG, motion module control joint
Tool is moved down up to contact surface and circuit board contacts to be bound, while controls the second support portion and the first support portion that phase occurs
To movement, it is in contact with ACF, ACF is hardened, realize the binding of circuit to be bound.
Further, the first preset temperature is 80 DEG C, and the second preset temperature is 145 DEG C.
Embodiment three
A kind of chip bonding method is present embodiments provided, applied to chip bonding device as described above, the method
Including：
Second support portion is controlled to be in first state, while first support portion is controlled to be in the first default temperature
Degree controls second support portion to be in the second preset temperature, wherein, the first preset temperature is hard less than anisotropy conductiving glue
Change temperature, the second preset temperature is not less than the hardening temperature of anisotropy conductiving glue；
The underlay substrate that attaching is needed to be bound to circuit board is placed on the first support portion；
The joint tool is controlled to move down up to the contact surface and circuit board contacts to be bound, while controls second
Support portion is move upwardly until that the supporting surface of second support portion is contacted with the underlay substrate.
In the present embodiment, before COG this pressures are carried out, second support portion is controlled to be in first state, second supports
Portion is not in contact with underlay substrate, the first support portion support substrate substrate, while it is pre- that first support portion is controlled to be in first
If temperature, second support portion is controlled to be in the second preset temperature, wherein, the first preset temperature is less than the hardening temperature of ACF,
Second preset temperature is not less than the hardening temperature of ACF, will not be right since the second support portion is not in contact with underlay substrate
ACF applies temperature, and ACF will not be hardened, and the ACF before COG this pressures are carried out is avoided first to be hardened and binding occurs extremely.Into
During row this pressure of COG, control joint tool is moved down up to contact surface and circuit board contacts to be bound, while controls the second support
With the first support portion relative motion occurs for portion, is in contact with ACF, ACF is hardened, realize the binding of circuit to be bound.
Further, it will attach and need to be further included before the underlay substrate for being bound circuit board is placed on the first support portion：
Clean underlay substrate；
Anisotropy conductiving glue band is pasted onto on the second area of underlay substrate；
Circuit board to be bound is attached on the anisotropy conductiving glue band.
Example IV
A kind of chip bonding device is present embodiments provided, as shown in figure 5, the chip bonding device includes supporting table and position
Joint tool 16 above supporting table.Wherein, supporting table support substrate substrate 10, underlay substrate 10, which includes attaching, treats binding electricity
The second area of road plate and the first area in addition to second area, supporting table include the first support portion 17 of corresponding first area
With the second support portion 18 of corresponding second area, the supporting surface of the first support portion 17 is contacted with underlay substrate 10 with support substrate base
Relative motion can occur with the first support portion 17 for plate 10, the second support portion 18 so as to cut between the first state and a second state
It changes, wherein, when in first state, as shown in Fig. 5 left halfs, the supporting surface of the second support portion 18 and the first support portion 17
Supporting surface is located in Different Plane, and the second support portion 18 is not contacted with underlay substrate 10；When in the second state, such as Fig. 5 right sides
Shown in part, the supporting surface of the second support portion 18 and the supporting surface of the first support portion 17 are in the same plane, the second support portion
18 contact with underlay substrate 10.
Chip bonding device further includes：Above supporting table, the joint tool 16 of corresponding second area, joint tool 16
For being not less than to circuit board to be bound with high-temperature pressurizing, joint tool 16 and the area of the contact surface of circuit board contacts to be bound
The area of second area, in this way when carrying out this pressure of COG, joint tool fully can apply pressure to circuit board to be bound.
Specifically, the second support portion can be driven by lifting structure in the direction of the supporting surface perpendicular to the first support portion
Upper movement.Lifting structure can include：It supports the supporting rod of the second support portion and drives supporting rod perpendicular to the first support portion
Supporting surface the driving motor that moves upwards of side.
Chip bonding device further includes temperature control module and motion module, wherein, temperature control module is being fixed in substrate base
During this pressure of chip on plate, the first support portion 17 of control be in the first preset temperature, and the second support portion 18 of control is in second in advance
If temperature, wherein, the first preset temperature is less than the hardening temperature of anisotropy conductiving glue, and the second preset temperature is not less than each to different
Property conducting resinl hardening temperature, usually, the first preset temperature be 80 DEG C, the second preset temperature be 145 DEG C；Need to be tied up in attaching
Determine circuit board underlay substrate 10 be placed on the first support portion 17 before, motion module using lifting structure control second support
Portion 18 is in first state；Attach need to be bound circuit board underlay substrate 10 be placed on the first support portion 17 after, control
Joint tool 16 processed is moved down up to contact surface and circuit board contacts to be bound, while the second support portion 18 is controlled to move up
Until the supporting surface of the second support portion 18 is contacted with underlay substrate 10.
Wherein, as shown in fig. 6, the first support portion 17 can be made of multiple mutually independent supporting blocks, the second support portion
18 can also be made of more than one supporting block, the supporting block of the supporting block of the first support portion 17 and the second support portion 18 it is big
Small and specification is all identical, according to the size and location of circuit board to be bound, in that case it can be decided which supporting block to form second by
Support part 18, remaining supporting block form the first support portion 17.
The chip bonding method of the present embodiment specifically includes following steps：
ACF13 is fixed on underlay substrate 10 after step 1, cleaning underlay substrate 10；
Specifically, carrying out the cleaning of underlay substrate 10 first, the alien material on 10 surface of underlay substrate is disposed；Institute
It states alien material and includes organic matter and inorganic matter, inorganic matter can be cleaned using physical cleaning mode, utilize chemical cleaning mode
Cleaning organic matter；Drying and processing is carried out to the underlay substrate 10 after cleaning, and will be through using organic solvent followed by dryer
The pre-binding region crossed on treated underlay substrate 10 cleans up, and ACF13 is fixed on substrate base using equipment
Pre-binding region on plate 10, then into COG binding techniques.
Step 2, the precompressed processing for carrying out COG binding techniques, IC12 is fixed on ACF13；
Specifically, behind pre-binding region ACF13 being fixed on underlay substrate 10, the precompressed of COG binding techniques is carried out
Processing, IC12 and underlay substrate 10 are aligned, IC12 is fixed on ACF13 by certain pressure after contraposition, plays contraposition
Effect, behind can be carried out COG binding technique this pressure processing.
Step 3, the temperature of the first support portion 17 of control are 80 DEG C, and the temperature of the second support portion 18 of control is 145 DEG C, control
The temperature of joint tool 16 is 145 DEG C, while the second support portion 18 is controlled to move up, and joint tool 16 moves down；
In step 1 and 2, the supporting surface of the supporting surface of the second support portion 18 and the first support portion 17 is located at Different Plane
On, the second support portion 18 is not in contact with underlay substrate 10, therefore, before IC12 is fixed on ACF13, can also control
The temperature of first support portion 17 is 80 DEG C, the temperature of the second support portion 18 of control for 145 DEG C, due to the second support portion 18 not with lining
Substrate 10 is in contact, therefore will not apply temperature to ACF13, and ACF13 will not be hardened.
Step 4, while the second support portion 18 is contacted with underlay substrate 10, joint tool 16 is also contacted with IC12,
Two support portions 18 and joint tool 16 pressurize jointly to ACF13, and joint tool 16 carries out underlay substrate 10, ACF13 and IC12
High temperature this pressure, this pressure of low temperature and high temperature this pressure processing, complete entire this pressure processing procedure, realization IC12 and underlay substrate 10 it is complete
All solidstate completes the binding of IC12.
In the present embodiment, before COG this pressure is carried out, the second support portion is not in contact with underlay substrate, the first support portion
Support substrate substrate since the second support portion is not in contact with underlay substrate, will not apply temperature, ACF will not be by ACF
Hardening avoids the ACF before COG this pressures are carried out from being first hardened and binding occurs extremely.When carrying out this pressure of COG, the second support
With the first support portion relative motion occurs for portion, is in contact with ACF, ACF is hardened, you can realize tying up for circuit to be bound
It is fixed.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, several improvements and modifications can also be made, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of supporting table, is used to support underlay substrate, the underlay substrate includes the second area for attaching circuit board to be bound
With the first area in addition to the second area, which is characterized in that the supporting table includes：
First support portion of the corresponding first area, the supporting surface of first support portion can be contacted with the first area
To support the underlay substrate；
Opposite fortune can occur with first support portion for the second support portion of the corresponding second area, second support portion
It moves to switch between the first state and a second state, wherein, when in first state, the support of second support portion
Face and the supporting surface of first support portion are located in Different Plane, and first support portion is in the first preset temperature, described
Second support portion is in the second preset temperature, and the first preset temperature is less than the hardening temperature of anisotropy conductiving glue, and second is default
Temperature is not less than the hardening temperature of anisotropy conductiving glue；When in the second state, the supporting surface of second support portion with
The supporting surface of first support portion is in the same plane.
2. supporting table according to claim 1, which is characterized in that first support portion is by multiple mutually independent supports
Block forms, and second support portion is made of more than one supporting block, the supporting block of first support portion and described second
The support block size of support portion is identical.
3. supporting table according to claim 1, which is characterized in that further include：
Lifting structure, for second support portion to be driven to be moved upwards in the side of the supporting surface perpendicular to the first support portion.
4. supporting table according to claim 3, which is characterized in that the lifting structure includes：
Supporting rod is used to support second support portion；
Driving motor, for the supporting rod to be driven to be moved upwards in the side of the supporting surface perpendicular to the first support portion.
5. a kind of chip bonding device, which is characterized in that including the supporting table as described in any one of claim 1-4.
6. chip bonding device according to claim 5, which is characterized in that described device further includes：
Above the supporting table, the joint tool of corresponding second area, the joint tool is used for and circuit board to be bound
The area of the contact surface of contact is not less than the area of the second area.
7. chip bonding device according to claim 6, which is characterized in that described device further includes：
Temperature control module, for first support portion when being fixed in this pressure of chip on glass substrate, to be controlled to be in the
One preset temperature controls second support portion to be in the second preset temperature, wherein, the first preset temperature is led less than anisotropy
The hardening temperature of electric glue, the second preset temperature are not less than the hardening temperature of anisotropy conductiving glue；
Motion module, for attach need to be bound circuit board underlay substrate be placed on the first support portion before, utilize liter
Second support portion described in drop structure control is in first state；The underlay substrate for needing to be bound circuit board in attaching is placed on first
After on support portion, the joint tool is controlled to move down until the contact surface and circuit board contacts to be bound, same to time control
It makes the second support portion and is move upwardly until that the supporting surface of second support portion is contacted with the underlay substrate.
8. chip bonding device according to claim 7, which is characterized in that the first preset temperature is 80 DEG C, and second is default
Temperature is 145 DEG C.
A kind of 9. chip bonding method, which is characterized in that applied to the chip bonding dress as described in any one of claim 6-8
It puts, the method includes：
Second support portion is controlled to be in first state, while first support portion is controlled to be in the first preset temperature, is controlled
It makes second support portion and is in the second preset temperature, wherein, the first preset temperature is less than the hardening temperature of anisotropy conductiving glue
Degree, the second preset temperature are not less than the hardening temperature of anisotropy conductiving glue；
The underlay substrate that attaching is needed to be bound to circuit board is placed on the first support portion；
The joint tool is controlled to move down up to the contact surface and circuit board contacts to be bound, while controls the second support
Portion is move upwardly until that the supporting surface of second support portion is contacted with the underlay substrate.
10. chip bonding method according to claim 9, which is characterized in that need the substrate for being bound circuit board by attaching
Substrate further includes before being placed on the first support portion：
Clean underlay substrate；
Anisotropy conductiving glue band is pasted onto on the second area of underlay substrate；
Circuit board to be bound is attached on the anisotropy conductiving glue band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610172852.8A CN105810629B (en) | 2016-03-24 | 2016-03-24 | Supporting table, chip bonding method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610172852.8A CN105810629B (en) | 2016-03-24 | 2016-03-24 | Supporting table, chip bonding method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105810629A CN105810629A (en) | 2016-07-27 |
| CN105810629B true CN105810629B (en) | 2018-06-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610172852.8A Active CN105810629B (en) | 2016-03-24 | 2016-03-24 | Supporting table, chip bonding method and device |
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| CN (1) | CN105810629B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106773213B (en) * | 2017-01-03 | 2020-02-18 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
| CN107357058A (en) * | 2017-08-24 | 2017-11-17 | 重庆市福显电子科技有限公司 | A kind of compression method of LCDs and FPC |
| CN110544655B (en) * | 2019-09-03 | 2021-09-14 | 云谷（固安）科技有限公司 | Binding device and binding method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005005304A (en) * | 2003-06-09 | 2005-01-06 | Seiko Epson Corp | System and process for manufacturing semiconductor device |
| JP2011081257A (en) * | 2009-10-08 | 2011-04-21 | Hitachi Chem Co Ltd | Method for manufacturing circuit component |
| JP2011132295A (en) * | 2009-12-22 | 2011-07-07 | Sanyo Electric Co Ltd | Method for pasting adhesive film and method for producing solar cell module |
| US8870051B2 (en) * | 2012-05-03 | 2014-10-28 | International Business Machines Corporation | Flip chip assembly apparatus employing a warpage-suppressor assembly |
| JP6257303B2 (en) * | 2013-12-17 | 2018-01-10 | デクセリアルズ株式会社 | Manufacturing method of connecting body, connecting method, and connecting body |
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