CN105762244A - White light LED chip of vertical structure and preparation method thereof - Google Patents
White light LED chip of vertical structure and preparation method thereof Download PDFInfo
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- CN105762244A CN105762244A CN201610231288.2A CN201610231288A CN105762244A CN 105762244 A CN105762244 A CN 105762244A CN 201610231288 A CN201610231288 A CN 201610231288A CN 105762244 A CN105762244 A CN 105762244A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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Abstract
The invention provides a white light LED chip of a vertical structure and a preparation method thereof, wherein the preparation method comprises the steps of: respectively preparing a blue light/green light/red light epitaxial structure; successively transferring the blue light and green light epitaxial structures to a first temporary support substrate, and respectively removing the growth substrates of the blue light and green light epitaxial structures; simultaneously transferring the blue light and green light epitaxial structures to a second temporary support substrate; transferring the red light epitaxial structure to the second temporary support substrate, and removing the growth substrate of the red light epitaxial structure; simultaneously transferring the blue light, green light and red light epitaxial structures to a permanent support substrate, and removing the second temporary support substrate; and preparing N electrodes on the surfaces of the blue light, green light and red light epitaxial structures. The obtained white light LED chip is good in stability, good in consistency, more uniform in light color and simpler in light distribution.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of vertical stratification White-light LED chip and preparation method thereof.
Background technology
LED (LightEmittingDiode, light emitting diode) it is the semiconductor device of a kind of solid-state that can convert electrical energy into visible ray, its principle of luminosity is electroluminescence, namely after adding forward current on PN junction, free electron and hole-recombination and luminous, thus directly electric energy being converted into luminous energy.LED, especially white light LEDs, be widely used as a kind of new lighting source material, the advantages such as response speed is fast, shock resistance good, life-span length, energy-conserving and environment-protective that it has and fast-developing, be widely used in the field such as beautification of landscape and indoor and outdoor lighting at present.
The main employing of preparation of current white light LEDs is that the technique being coated with yellow fluorescent powder on blue chip prepares, and is namely directly coated with on blue-light LED chip surface or sprays layer of fluorescent powder glue, the green-yellow light synthesis white light that it is sent by LED blue light and fluorescent material；A small amount of red fluorescence powder can also be added wherein in order to improve color developing or add appropriate green, red fluorescence powder simultaneously.Although it possesses the advantages such as preparation is simple, temperature stability is good, but its concordance is poor, colour temperature changes with angle, and the accurate fixing quantity of yellow fluorescent powder not easily, the blue or partially yellow phenomenon of light colour cast easily occurs.
Summary of the invention
For the problems referred to above, the invention provides a kind of vertical stratification White-light LED chip and preparation method thereof, its single White-light LED chip can directly send the light of three kinds of wave bands of red, blue and green, mix the white light closer to natural light.
Technical scheme provided by the invention is as follows:
A kind of vertical stratification White-light LED chip preparation method, including:
S1 prepares blue light epitaxial structure, green glow epitaxial structure and HONGGUANG epitaxial structure respectively；
Blue light epitaxial structure and green glow epitaxial structure are transferred to the first temporary position on the first temporary support substrate and the second temporary position by S2 successively, and the growth substrates in blue light epitaxial structure and green glow epitaxial structure are removed respectively；
Blue light epitaxial structure in step S2 and green glow epitaxial structure are simultaneously transferred on the second temporary support substrate the first predeterminated position and the second predeterminated position by S3；
HONGGUANG epitaxial structure is transferred to the 3rd predeterminated position on the second temporary support substrate by S4, and the growth substrates in HONGGUANG epitaxial structure is removed；
Blue light epitaxial structure in step S4, green glow epitaxial structure and HONGGUANG epitaxial structure are simultaneously transferred on permanent support substrate by S5, and remove described second temporary support substrate；
N electrode is prepared on S6 blue light epitaxial structure in step s 5 respectively, green glow epitaxial structure and HONGGUANG epitaxial structure surface, completes the preparation of vertical stratification White-light LED chip with this.
In the technical program, for the ease of the transfer between above-mentioned first temporary support substrate and the second temporary support substrate of blue light epitaxial structure, green glow epitaxial structure and HONGGUANG epitaxial structure, we are provided with alignment mark and the consistent size of growth substrates in blue light epitaxial structure, green glow epitaxial structure and HONGGUANG epitaxial structure in each epitaxial structure.
It is further preferred that include successively in blue light epitaxial structure: growth substrates, N-type GaN (gallium nitride) layer, active layer and P type GaN layer, wherein, described growth substrates is Sapphire Substrate；
Including successively in green glow epitaxial structure: growth substrates, N-type GaN layer, active layer and P type GaN layer, wherein, described growth substrates is Sapphire Substrate；
Including successively in HONGGUANG epitaxial structure: growth substrates, P type AlGaInP (AlGaInP) layer, active layer and N-type AlGaInP layer, wherein, described growth substrates is P p type gallium arensidep substrate.
In the technical program, the composition structure of above-mentioned each epitaxial structure is simply briefly described, has been not limited to this in other embodiments.
It is further preferred that also include between step S1 and step S2:
Adopt the blue light epitaxial structure of preparation, green glow epitaxial structure and HONGGUANG epitaxial structure in the method etching step S1 respectively of photoresist mask, retaining the first extension square presetting size respectively on the predeterminated position of each growth substrates, described extension square includes blue light extension square, green glow extension square and HONGGUANG extension square.
In the technical program, in the process that blue light epitaxial structure, green glow epitaxial structure and HONGGUANG epitaxial structure are carried out mask etch, reserve a certain size extension square respectively in each growth substrates according to default rule, the position of each extension square retains also according to default rule.
It is further preferred that in step s 2, specifically include:
S21 is by the P type GaN layer in blue light extension square and the first temporary support substrate bonding, so that this blue light extension square is transferred to the first temporary position in the first temporary support substrate；
Growth substrates in blue light extension square is removed by S22；
S23 is by the P type GaN layer in green glow extension square and the first temporary support substrate bonding, so that this green glow extension square is transferred to the second temporary position in the first temporary support substrate；
Growth substrates in green glow extension square is removed by S24.
Further preferably, in the step s 21, P one layer of ultraviolet glue of type GaN layer surface-coated in blue light extension square, and solidify this ultraviolet glue after the blue light extension square being coated with ultraviolet glue is bonded to the first temporary position in the first support substrate, it is achieved the bonding of blue light extension square and the first temporary support substrate；
And/or,
In step S22, adopt laser lift-off technique to remove the growth substrates in blue light extension square and remove；
And/or,
In step S23, P one layer of ultraviolet glue of type GaN layer surface-coated in green glow extension square, and solidify this ultraviolet glue after the green glow extension square being coated with ultraviolet glue is bonded to the second temporary position in the first support substrate, it is achieved the bonding of green glow extension square and the first temporary support substrate；
And/or,
In step s 24, adopt laser lift-off technique to remove the growth substrates in green glow extension square to remove.
It is further preferred that specifically include in step s 4:
N-type AlGaInP layer in HONGGUANG extension square is bonded on the 3rd predeterminated position on the second temporary support substrate by S41；
S42 adopts laser lift-off technique the growth substrates in HONGGUANG extension square to be removed；
Or,
Specifically include in step s 5:
Evaporation Ag layer in P type AlGaInP layer surface in P type GaN layer and HONGGUANG extension square in P type GaN layer, green glow extension square in S51 blue light extension square in step s 4；
Ag (silver) layer in step S51 is etched by S52, retains the second Ag layer presetting size in the center on blue light extension square/green glow extension square/HONGGUANG extension square surface；
The body structure surface that S53 is formed in step S52 sputters protective layer and bonded layer successively；
The structure formed in step S53 is bonded with permanent support substrate by S54 by bonded layer；
S55 removes the second temporary support substrate；
Permanent support substrate is carried out alligatoring by S56；
S57 forms passivation layer in the step S56 body structure surface formed.
It is further preferred that also include in step sl: prepare ultraviolet light epitaxial structure；Described ultraviolet light epitaxial structure includes: growth substrates, N-type GaN layer, active layer and P type GaN layer, and wherein, described growth substrates is Sapphire Substrate；
Also include in step s 2: ultraviolet light epitaxial structure is transferred to the 3rd temporary position on the first temporary support substrate, and the growth substrates in ultraviolet light epitaxial structure is removed；
Also include in step s3: be simultaneously transferred on the second temporary support substrate by the blue light epitaxial structure in step S2, green glow epitaxial structure and ultraviolet light epitaxial structure the first predeterminated position, the second predeterminated position and the 4th predeterminated position；
Also include in step s 5: the blue light epitaxial structure in step S4, green glow epitaxial structure, ultraviolet light epitaxial structure and HONGGUANG epitaxial structure are simultaneously transferred on permanent support substrate, and remove described second temporary support substrate；
Also include in step s 6: N electrode is prepared on blue light epitaxial structure in step s 5, green glow epitaxial structure, ultraviolet light epitaxial structure and HONGGUANG epitaxial structure surface respectively, completes the preparation of vertical stratification White-light LED chip with this.
It is further preferred that also include between step S1 and step S2:
Adopt the blue light epitaxial structure of preparation, green glow epitaxial structure, ultraviolet light epitaxial structure and HONGGUANG epitaxial structure in the method etching step S1 of photoresist mask, retaining the first extension square presetting size respectively on the predeterminated position of each growth substrates, described extension square includes blue light extension square, green glow extension square, ultraviolet light extension square and HONGGUANG extension square.
It is further preferred that specifically include in step s 2:
S21 is by the P type GaN layer in blue light extension square and the first temporary support substrate bonding, so that this blue light extension square is transferred to the first temporary position in the first temporary support substrate；
Growth substrates in blue light extension square is removed by S22；
S23 is by the P type GaN layer in green glow extension square and the first temporary support substrate bonding, so that this green glow extension square is transferred to the second temporary position in the first temporary support substrate；
Growth substrates in green glow extension square is removed by S24；
S25 is by the bonding of the P type GaN layer in ultraviolet light extension square Yu the first temporary support substrate, so that this ultraviolet light extension square is transferred to the 3rd temporary position in the first temporary support substrate；
Growth substrates in ultraviolet light extension square is removed by S26.
Present invention also offers a kind of vertical stratification White-light LED chip, described vertical stratification White-light LED chip includes a permanent support substrate, includes eliminating the blue light extension square of growth substrates, green glow extension square and HONGGUANG extension square according to what preset rules arranged on described permanent support substrate；Described blue light extension square, green glow extension square and HONGGUANG extension square surface include a N electrode.
It is further preferred that described in eliminate the blue light extension square of growth substrates and include successively from top to bottom: P type GaN layer, active layer and N-type GaN layer；
The described green glow extension square eliminating growth substrates includes from top to bottom successively: P type GaN layer, active layer and N-type GaN layer；
The described HONGGUANG extension square eliminating growth substrates includes from top to bottom successively: P type AlGaInP layer, active layer and N-type AlGaInP layer.
It is further preferred that include on described permanent support substrate according to preset rules arrangement eliminate the blue light extension square of growth substrates, green glow extension square and HONGGUANG extension square outside, also include a ultraviolet light extension square eliminating growth substrates.
Vertical stratification White-light LED chip provided by the invention and preparation method thereof, it is possible to bring following beneficial effect:
In the present invention, blue light epitaxial structure, green glow epitaxial structure and HONGGUANG epitaxial structure composition is obtained new White-light LED chip by us together, in the course of the work, these three light mixes formation white light, only need single chip just can send white light, efficiently solve performance degradation, the problem such as instability that the White-light LED chip using fluorescent material to generate introduces, use White-light LED chip good stability that preparation method provided by the invention obtains, concordance good, photochromic evenly and luminous intensity distribution simpler.
Further, in the present invention, on the basis of above-mentioned White-light LED chip structure, the ultraviolet light epitaxial structure being also added with so that White-light LED chip to go out light more natural, access expansion light.
Accompanying drawing explanation
Below by the way of clearly understandable, accompanying drawings preferred implementation, above-mentioned characteristic, technical characteristic, advantage and implementation thereof are further described.
Fig. 1 is each epitaxial structure schematic diagram in the embodiment of the present invention one, wherein, Fig. 1 (a) is HONGGUANG epitaxial structure schematic diagram, Fig. 1 (b) is blue light epitaxial structure schematic diagram, Fig. 1 (c) is green glow epitaxial structure schematic diagram, and Fig. 1 (d) is ultraviolet light epitaxial structure schematic diagram；
Fig. 2 is each extension box structure schematic diagram in the embodiment of the present invention one, wherein, Fig. 2 (a) is HONGGUANG extension square, and Fig. 2 (b) is blue light extension block chart, 2 (c) is green glow extension block chart, and 2 (d) is ultraviolet light extension square；
Fig. 3 is White-light LED chip structural representation in the embodiment of the present invention one.
Accompanying drawing labelling:
10-HONGGUANG epitaxial structure, the P p type gallium arensidep substrate of 11-HONGGUANG epitaxial structure, 12-HONGGUANG epitaxial layer, 20-blue light epitaxial structure, the Sapphire Substrate of 21-blue light epitaxial structure, 22-blue light epitaxial layer, 30-green glow epitaxial structure, the Sapphire Substrate of 31-green glow epitaxial structure, 32-green glow epitaxial layer, 40-ultraviolet light epitaxial structure, the Sapphire Substrate of 41-ultraviolet light epitaxial structure, 42-ultraviolet light epitaxial layer.
Detailed description of the invention
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below comparison accompanying drawing is illustrated the specific embodiment of the present invention.It should be evident that the accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings, and obtain other embodiment.
Embodiment one,
First, adopt MOCVD (Metal-organicChemicalVaporDepositon, MOCVD) method at 2 inches sapphire substrate (Al2O3) normal growth blue light extension on 21, form blue light epitaxial structure 20, such as Fig. 1 (b), wherein, this blue light epitaxial layer 22 comprises N-type GaN, active layer and P type GaN successively.Adopt MOCVD method at 2 inches sapphire substrate (Al2O3) normal growth green glow extension on 31, such as Fig. 1 (c), form green glow epitaxial structure 30, wherein, this green glow epitaxial layer 32 comprises N-type GaN, active layer and P type GaN successively.Adopt MOCVD method at 2 inches sapphire substrate (Al2O3) normal growth ultraviolet light extension on 41, form ultraviolet light epitaxial structure 40, such as Fig. 1 (d), wherein, this outer light epitaxial layer 42 purple comprises N-type GaN, active layer and P type GaN successively.Adopt MOCVD method normal growth HONGGUANG extension on 2 inches of P p type gallium arensidep substrate (GaAs) 11, form HONGGUANG epitaxial structure 10, such as Fig. 1 (a), wherein, this HONGGUANG epitaxial layer 12 comprises P type AlGaInP, active layer, N-type AlGaInP successively.
Afterwards, utilize photoresist mask technique, routine is adopted to carve dry etching (ICP) technique of GaN epitaxy and AlGaInP extension respectively by above-mentioned blue light epitaxial structure, green glow epitaxial structure, ultraviolet light epitaxial structure and HONGGUANG epitaxial structure thin film cut through until growth substrates, it is separated into the extension square of 38 × 38mil (mil), as shown in Figure 2, the HONGGUANG extension square that Fig. 2 (a) generates for etching, the blue light extension block chart that Fig. 2 (b) generates for etching, the green glow extension block chart that 2 (c) generates for etching, the ultraviolet light extension square that 2 (d) generates for etching, spacing between concrete each extension square is 1.05mm (millimeter).In order to facilitate the follow-up transfer of each epitaxial structure and para-position, the growth substrates in each epitaxial structure carves alignment mark simultaneously.nullConcrete our HONGGUANG extension square to remaining in respective growth substrates after etching here、Blue light extension square、Explain in the position of green glow extension square and ultraviolet light extension square: if growth substrates is divided into 16 positions，Include aforementioned four epitaxial structure by the White-light LED chip generated simultaneously，Then as shown in Figure 2，In position (1,1)、(1,3)、(3,1) and (3,3) four positions retain HONGGUANG extension square，In position (1,2)、(1,4)、(3,2) and (3,4) four positions retain blue light and prolong square，In position (2,1)、(2,3)、(3,1) and (4,3) four positions retain green glow extension square，In position (2,3)、(2,4)、(4,2) and (4,4) four positions retain ultraviolet light extension square，So，Facilitate follow-up by blue light extension square、Green glow extension square、Ultraviolet light extension square and HONGGUANG extension square transfer to the first temporary support substrate、On second temporary support substrate and permanent support substrate.Certainly, here, the method that we are illustrative of giving above-mentioned each a kind of arrangement of extension square, in other embodiments, can according to the position of the extension square of practical situation sets itself each color, in principle, as long as White-light LED chip can be formed all to be included in the content of the present embodiment.
Afterwards, one layer of conventional ultraviolet glue of P type GaN layer surface spin coating in blue light extension square, then by its whole first temporary support substrate (such as glass) being bonded to 2 inches；Then, by this ultraviolet glue of 365nm (nanometer) ultraviolet radiation-curable so that blue light extension square and the first temporary support substrate bonding are firm.Then laser lift-off technique is utilized, by the sapphire (Al in blue light extension square2O3) substrate removes, and with hydrochloric acid: the mixed solution of water=1:1 soaks 60s (second), removes surface Ga (gallium) droplet so that the N-type GaN in blue light epitaxial layer exposes.Obtain the first temporary support substrate containing blue light epitaxial layer.
Similarly, one layer of above-mentioned ultraviolet glue of P type GaN layer surface spin coating in ultraviolet light extension square, adopt photoetching to version principle, alignment mark is utilized to be alignd by the blue light extension square on ultraviolet light extension square and the first temporary support substrate under the microscope so that ultraviolet light extension square is in the underface of blue light extension square.Then fit the pressure 60s of two epitaxial wafers precompressed 5kg (kilogram), by 365nm ultraviolet radiation-curable ultraviolet glue so that ultraviolet light epitaxial structure and the first temporary support substrate bonding are firm.Then laser lift-off technique is utilized, and with hydrochloric acid: the mixed solution of water=1:1 soaks 60s, removes surface Ga and drips, by the sapphire (Al in ultraviolet light extension square2O3) substrate removal so that N-type GaN exposes.Obtain the first temporary support substrate containing blu-ray layer and ultraviolet light epitaxial layer.
Similarly, one layer of above-mentioned ultraviolet glue of P type GaN layer surface spin coating in green glow extension square, adopt photoetching to version principle, alignment mark is utilized the blue light extension square on green glow epitaxial structure and the first temporary support substrate and ultraviolet light extension square to be alignd under the microscope so that green glow extension square is on the left side of ultraviolet light extension square.Then fit the pressure 60s of two epitaxial wafer precompressed 5kg, by 365nm ultraviolet radiation-curable ultraviolet glue so that green glow epitaxial structure and the first temporary support substrate bonding are firm.Then laser lift-off technique is utilized, by sapphire (Al2O3) substrate removes, and with hydrochloric acid: water=1:1 solution soaking 60s, removal surface Ga is dripped so that the N-type GaN in green glow epitaxial layer exposes.Obtain the first temporary support substrate containing blue light epitaxial layer, ultraviolet light epitaxial layer and green glow epitaxial layer, and the N-type GaN in three epitaxial layers is upward.
Afterwards, N-type GaN layer surface-coated paraffin at above-mentioned the first temporary support substrate containing blue light epitaxial layer, ultraviolet light epitaxial layer and green glow epitaxial layer, and the second temporary support substrate (such as silicon chip) of 2 inches of fitting, under 80 DEG C of temperature environments, use 5kgf pressing 10min so that two substrate slices are bonded together.Then, adopt laser scribe process to be scratched from the back side along extension groove by the first temporary support substrate, obtain the block pattern of 2 × 2mm (millimeter), allow the ultraviolet glue under the first temporary support substrate expose in atmosphere；Subsequently, the bonding pad of the first temporary support substrate and the second temporary support substrate is put in ultraviolet glue solution sol solution and soak 1 hour so that ultraviolet glue is completely dissolved, depart from each epitaxial structure with this first temporary support substrate.Obtain the second temporary support substrate containing blue light epitaxial layer, ultraviolet light epitaxial layer and green glow epitaxial layer, and the P type GaN layer in each epitaxial layer is upward.
Afterwards, one layer of paraffin of N-type AlGaInP layer surface spin coating in HONGGUANG epitaxial structure, adopt photoetching to version principle, utilize alignment mark to be alignd by the epitaxial layer on HONGGUANG epitaxial structure and the second temporary support substrate under the microscope so that HONGGUANG extension square is on the left side of blue light epitaxial layer.Then two epitaxial wafers are fitted at 80 degree of temperature, 10kgf pressing 30min so that HONGGUANG epitaxial structure and the second temporary support substrate bonding are firm；Utilize laser lift-off technique afterwards, GaAs (GaAs) substrate is removed, and with hydrochloric acid: water=1:1 solution soaking 60s, removal surface Ga is dripped so that the P type AlGaInP layer in HONGGUANG epitaxial structure exposes.Obtain the second temporary support substrate containing blue light epitaxial layer, ultraviolet light epitaxial layer, green glow epitaxial layer and HONGGUANG epitaxial layer, and the P type GaN layer in blue light epitaxial layer, ultraviolet light epitaxial layer, green glow epitaxial layer and the P type AlGaInP layer in HONGGUANG epitaxial layer are upward.
Afterwards, thick with electron beam evaporation plating at the P type epitaxial surface of the blue light epitaxial layer of the second temporary support substrate, green glow epitaxial layer, ultraviolet light epitaxial layer and HONGGUANG epitaxial layerAg, and utilize photoresist mask, adopt conventional wet etch Ag technique, Ag is corroded into 36 × 36mil block pattern, and the Ag block pattern corroded is positioned at the center of above-mentioned epi-layer surface.
Afterwards, above-mentioned steaming have Ag square containing blue light epitaxial layer, green glow epitaxial layer, ultraviolet light epitaxial layer and HONGGUANG epitaxial layer the second temporary support substrate on sputtering thickness beTiW/Pt (titanium tungsten/platinum) alloy as protective layer.Afterwards, conventional electron beam evaporation process evaporation is adopted at the second temporary support substrate of above-mentioned sputtered with Ti WIn layer as bonded layer.Afterwards, conventional electron beam evaporation process is adopted to be deposited with respectively on the two sides of the silicon chip of 2 inches of thick for 200um<100>twin polishingsPtAu (platinum) alloy-layer, and the In laminating of the one side of silicon double-polished chip with the second temporary support substrate is closed, puts in bonding machine platform and be bonded, bonding conditions is temperature 200 DEG C, pressure 500kgf, time 30min.
Afterwards, silicon reduction process is adopted to be ground off from the back side by the second temporary support substrate, until exposing paraffin layer.And the silicon chip containing paraffin is put into ultrasonic immersion 45min in paraffin lysate, until paraffin is completely dissolved, expose the P type GaN layer in blue light epitaxial layer, ultraviolet light epitaxial layer, green glow epitaxial layer and the P type AlGaInP layer in HONGGUANG epitaxial layer.Obtain the structure containing blue light epitaxial layer, ultraviolet light epitaxial layer, green glow epitaxial layer and HONGGUANG epitaxial layer with this, and the N-type GaN layer in blue light epitaxial layer, ultraviolet light epitaxial layer, green glow epitaxial layer and the N-type AlGaInp layer in HONGGUANG epitaxial layer are upward.
Afterwards, said structure is put into immersion 3min in the KOH solution that concentration is 75% of 75 DEG C so that silicon wafer N-type epitaxial surface obtains uniform alligatoring pattern.Subsequently, adopt conventional PECVD (PlasmaEnhancedChemicalVaporDeposition, plasma enhanced chemical vapor deposition method) depositing operation, deposit at above-mentioned coarse surfaceThick SiNO (silicon oxynitride) passivation layer, utilizes photoresist mask, erodes away SiNO figure in BOE solution so that SiNO is coated on the edge of extension square, protection extension side leakproof.
Finally, utilize conventional N electrode processing technology, make TiAl/TiAu alloy thick for 4um (micron) as N electrode at above-mentioned HONGGUANG epitaxial layer, blue light epitaxial layer, green glow epitaxial layer and ultraviolet light epitaxial layer N-type epitaxial surface respectively, as shown in Figure 3.Then conventional stroke knick point operation break-down is adopted, it is possible to obtain the LED chip containing single the 2mm × 2mm size that can send red, green, blue, four kinds of wave bands of ultraviolet.
Embodiment two,
First, adopt MOCVD (Metal-organicChemicalVaporDepositon, MOCVD) method at 2 inches sapphire substrate (Al2O3) upper normal growth blue light extension, form blue light epitaxial structure, wherein, this blue light epitaxial layer comprises N-type GaN, active layer and P type GaN successively.Adopt MOCVD method at 2 inches sapphire substrate (Al2O3) upper normal growth green glow extension, form green glow epitaxial structure, wherein, this green glow epitaxial layer comprises N-type GaN, active layer and P type GaN successively.Adopting MOCVD method in the upper normal growth HONGGUANG extension of 2 inches of P p type gallium arensidep substrate (GaAs), form HONGGUANG epitaxial structure, wherein, this HONGGUANG epitaxial layer comprises P type AlGaInP, active layer, N-type AlGaInP successively.
Afterwards, utilize photoresist mask technique, dry etching (ICP) technique that routine carves GaN epitaxy and AlGaInP extension is adopted above-mentioned blue light epitaxial structure, green glow epitaxial structure and HONGGUANG epitaxial structure thin film to be cut through until growth substrates respectively, being separated into the extension square of 38 × 38mil (mil), the spacing between concrete each extension square is 1.05mm (millimeter).In order to facilitate the follow-up transfer of each epitaxial structure and para-position, the growth substrates in each epitaxial structure carves alignment mark simultaneously.
Afterwards, one layer of conventional ultraviolet glue of P type GaN layer surface spin coating in blue light extension square, then by its whole first temporary support substrate (such as glass) being bonded to 2 inches；Then, by this ultraviolet glue of 365nm (nanometer) ultraviolet radiation-curable so that blue light extension square and the first temporary support substrate bonding are firm.Then laser lift-off technique is utilized, by the sapphire (Al in blue light extension square2O3) substrate removes, and with hydrochloric acid: the mixed solution of water=1:1 soaks 60s (second), removes surface Ga (gallium) droplet so that the N-type GaN in blue light epitaxial layer exposes.Obtain the first temporary support substrate containing blue light epitaxial layer.
Similarly, one layer of above-mentioned ultraviolet glue of P type GaN layer surface spin coating in green glow extension square, adopt photoetching to version principle, alignment mark is utilized to be alignd by the blue light extension square on green glow epitaxial structure and the first temporary support substrate under the microscope so that green glow extension square is on the left side of blue light extension square.Then fit the pressure 60s of two epitaxial wafer precompressed 5kg, by 365nm ultraviolet radiation-curable ultraviolet glue so that green glow epitaxial structure and the first temporary support substrate bonding are firm.Then laser lift-off technique is utilized, by sapphire (Al2O3) substrate removes, and with hydrochloric acid: water=1:1 solution soaking 60s, removal surface Ga is dripped so that the N-type GaN in green glow epitaxial layer exposes.Obtain the first temporary support substrate containing blue light epitaxial layer and green glow epitaxial layer, and the N-type GaN in two epitaxial layers is upward.
Afterwards, at the above-mentioned N-type GaN layer surface-coated paraffin containing blue light epitaxial layer and the first temporary support substrate of green glow epitaxial layer, and the second temporary support substrate (such as silicon chip) of 2 inches of fitting, under 80 DEG C of temperature environments, use 5kgf pressing 10min so that two substrate slices are bonded together.Then, adopt laser scribe process to be scratched from the back side along extension groove by the first temporary support substrate, obtain the block pattern of 2 × 2mm (millimeter), allow the ultraviolet glue under the first temporary support substrate expose in atmosphere；Subsequently, the bonding pad of the first temporary support substrate and the second temporary support substrate is put in ultraviolet glue solution sol solution and soak 1 hour so that ultraviolet glue is completely dissolved, depart from each epitaxial structure with this first temporary support substrate.Obtain the second temporary support substrate containing blue light epitaxial layer and green glow epitaxial layer, and the P type GaN layer in each epitaxial layer is upward.
Afterwards, one layer of paraffin of N-type AlGaInP layer surface spin coating in HONGGUANG epitaxial structure, adopt photoetching to version principle, utilize alignment mark to be alignd by the epitaxial layer on HONGGUANG epitaxial structure and the second temporary support substrate under the microscope so that HONGGUANG extension square is on the left side of blue light epitaxial layer.Then two epitaxial wafers are fitted at 80 degree of temperature, 10kgf pressing 30min so that HONGGUANG epitaxial structure and the second temporary support substrate bonding are firm；Utilize laser lift-off technique afterwards, GaAs (GaAs) substrate is removed, and with hydrochloric acid: water=1:1 solution soaking 60s, removal surface Ga is dripped so that the P type AlGaInP layer in HONGGUANG epitaxial structure exposes.Obtain the second temporary support substrate containing blue light epitaxial layer, green glow epitaxial layer and HONGGUANG epitaxial layer, and the P type GaN layer in blue light epitaxial layer, green glow epitaxial layer and the P type AlGaInP layer in HONGGUANG epitaxial layer are upward.
Afterwards, thick with electron beam evaporation plating at the P type epitaxial surface of the blue light epitaxial layer of the second temporary support substrate, green glow epitaxial layer and HONGGUANG epitaxial layerAg, and utilize photoresist mask, adopt conventional wet etch Ag technique, Ag is corroded into 36 × 36mil block pattern, and the Ag block pattern corroded is positioned at the center of above-mentioned epi-layer surface.
Afterwards, above-mentioned steaming have Ag square containing blue light epitaxial layer, green glow epitaxial layer and HONGGUANG epitaxial layer the second temporary support substrate on sputtering thickness beTiW/Pt (titanium tungsten/platinum) alloy as protective layer.Afterwards, conventional electron beam evaporation process evaporation is adopted at the second temporary support substrate of above-mentioned sputtered with Ti WIn layer as bonded layer.Afterwards, conventional electron beam evaporation process is adopted to be deposited with respectively on the two sides of the silicon chip of 2 inches of thick for 200um<100>twin polishingsPtAu (platinum) alloy-layer, and the In laminating of the one side of silicon double-polished chip with the second temporary support substrate is closed, puts in bonding machine platform and be bonded, bonding conditions is temperature 200 DEG C, pressure 500kgf, time 30min.
Afterwards, silicon reduction process is adopted to be ground off from the back side by the second temporary support substrate, until exposing paraffin layer.And the silicon chip containing paraffin is put into ultrasonic immersion 45min in paraffin lysate, until paraffin is completely dissolved, expose the P type GaN layer in blue light epitaxial layer and green glow epitaxial layer and the P type AlGaInP layer in HONGGUANG epitaxial layer.Obtain the structure containing blue light epitaxial layer, green glow epitaxial layer and HONGGUANG epitaxial layer with this, and the N-type GaN layer in blue light epitaxial layer, green glow epitaxial layer and the N-type AlGaInp layer in HONGGUANG epitaxial layer are upward.
Afterwards, said structure is put into immersion 3min in the KOH solution that concentration is 75% of 75 DEG C so that silicon wafer N-type epitaxial surface obtains uniform alligatoring pattern.Subsequently, adopt conventional PECVD (PlasmaEnhancedChemicalVaporDeposition, plasma enhanced chemical vapor deposition method) depositing operation, deposit at above-mentioned coarse surfaceThick SiNO (silicon oxynitride) passivation layer, utilizes photoresist mask, erodes away SiNO figure in BOE solution so that SiNO is coated on the edge of extension square, protection extension side leakproof.
Finally, utilize conventional N electrode processing technology, make TiAl/TiAu alloy thick for 4um as N electrode at the N-type epitaxial surface of above-mentioned HONGGUANG epitaxial layer, blue light epitaxial layer and green glow epitaxial layer respectively.Then conventional stroke knick point operation break-down is adopted, it is possible to obtain the LED chip containing single the 2mm × 2mm size that can send three kinds of wave bands of red, green, blue.
It should be noted that, above-described embodiment all can independent assortment as required.The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also making some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (12)
1. a vertical stratification White-light LED chip preparation method, it is characterised in that described preparation method includes:
S1 prepares blue light epitaxial structure, green glow epitaxial structure and HONGGUANG epitaxial structure respectively；
Blue light epitaxial structure and green glow epitaxial structure are transferred to the first temporary position on the first temporary support substrate and the second temporary position by S2 successively, and the growth substrates in blue light epitaxial structure and green glow epitaxial structure are removed respectively；
Blue light epitaxial structure in step S2 and green glow epitaxial structure are simultaneously transferred on the second temporary support substrate the first predeterminated position and the second predeterminated position by S3；
HONGGUANG epitaxial structure is transferred to the 3rd predeterminated position on the second temporary support substrate by S4, and the growth substrates in HONGGUANG epitaxial structure is removed；
Blue light epitaxial structure in step S4, green glow epitaxial structure and HONGGUANG epitaxial structure are simultaneously transferred on permanent support substrate by S5, and remove described second temporary support substrate；
N electrode is prepared on S6 blue light epitaxial structure in step s 5 respectively, green glow epitaxial structure and HONGGUANG epitaxial structure surface, completes the preparation of vertical stratification White-light LED chip with this.
2. preparation method as claimed in claim 1, it is characterised in that in step sl:
Including successively in blue light epitaxial structure: growth substrates, N-type GaN layer, active layer and P type GaN layer, wherein, described growth substrates is Sapphire Substrate；
Including successively in green glow epitaxial structure: growth substrates, N-type GaN layer, active layer and P type GaN layer, wherein, described growth substrates is Sapphire Substrate；
Including successively in HONGGUANG epitaxial structure: growth substrates, P type AlGaInP layer, active layer and N-type AlGaInP layer, wherein, described growth substrates is P p type gallium arensidep substrate.
3. preparation method as claimed in claim 2, it is characterised in that also include between step S1 and step S2:
Adopt the blue light epitaxial structure of preparation, green glow epitaxial structure and HONGGUANG epitaxial structure in the method etching step S1 respectively of photoresist mask, retaining the first extension square presetting size respectively on predeterminated position in each growth substrates, described extension square includes blue light extension square, green glow extension square and HONGGUANG extension square.
4. preparation method as claimed in claim 3, it is characterised in that in step s 2, specifically include:
S21 is by the P type GaN layer in blue light extension square and the first temporary support substrate bonding, so that this blue light extension square is transferred to the first temporary position in the first temporary support substrate；
Growth substrates in blue light extension square is removed by S22；
S23 is by the P type GaN layer in green glow extension square and the first temporary support substrate bonding, so that this green glow extension square is transferred to the second temporary position in the first temporary support substrate；
Growth substrates in green glow extension square is removed by S24.
5. preparation method as claimed in claim 4, it is characterised in that
In the step s 21, P one layer of ultraviolet glue of type GaN layer surface-coated in blue light extension square, and solidify this ultraviolet glue after the blue light extension square being coated with ultraviolet glue is bonded to the first temporary position in the first support substrate, it is achieved the bonding of blue light extension square and the first temporary support substrate；
And/or,
In step S22, adopt laser lift-off technique to remove the growth substrates in blue light extension square and remove；
And/or,
In step S23, P one layer of ultraviolet glue of type GaN layer surface-coated in green glow extension square, and solidify this ultraviolet glue after the green glow extension square being coated with ultraviolet glue is bonded to the second temporary position in the first support substrate, it is achieved the bonding of green glow extension square and the first temporary support substrate；
And/or,
In step s 24, adopt laser lift-off technique to remove the growth substrates in green glow extension square to remove.
6. preparation method as claimed in claim 3, it is characterised in that
Specifically include in step s 4:
N-type AlGaInP layer in HONGGUANG extension square is bonded on the 3rd predeterminated position on the second temporary support substrate by S41；
S42 adopts laser lift-off technique the growth substrates in HONGGUANG extension square to be removed；
Or,
Specifically include in step s 5:
Evaporation Ag layer in P type AlGaInP layer surface in P type GaN layer and HONGGUANG extension square in P type GaN layer, green glow extension square in S51 blue light extension square in step s 4；
Ag layer in step S51 is etched by S52, retains the second Ag layer presetting size in the center on blue light extension square/green glow extension square/HONGGUANG extension square surface；
The body structure surface that S53 is formed in step S52 sputters protective layer and bonded layer successively；
The structure formed in step S53 is bonded with permanent support substrate by S54 by bonded layer；
S55 removes the second temporary support substrate；
Permanent support substrate is carried out alligatoring by S56；
S57 forms passivation layer in the step S56 body structure surface formed.
7. the preparation method as described in claim 1-6 any one, it is characterised in that:
Also include in step sl: prepare ultraviolet light epitaxial structure；Described ultraviolet light epitaxial structure includes: growth substrates, N-type GaN layer, active layer and P type GaN layer, and wherein, described growth substrates is Sapphire Substrate；
Also include in step s 2: ultraviolet light epitaxial structure is transferred to the 3rd temporary position on the first temporary support substrate, and the growth substrates in ultraviolet light epitaxial structure is removed；
Also include in step s3: be simultaneously transferred on the second temporary support substrate by the blue light epitaxial structure in step S2, green glow epitaxial structure and ultraviolet light epitaxial structure the first predeterminated position, the second predeterminated position and the 4th predeterminated position；
Also include in step s 5: the blue light epitaxial structure in step S4, green glow epitaxial structure, ultraviolet light epitaxial structure and HONGGUANG epitaxial structure are simultaneously transferred on permanent support substrate, and remove described second temporary support substrate；
Also include in step s 6: N electrode is prepared on blue light epitaxial structure in step s 5, green glow epitaxial structure, ultraviolet light epitaxial structure and HONGGUANG epitaxial structure surface respectively, completes the preparation of vertical stratification White-light LED chip with this.
8. preparation method as claimed in claim 7, it is characterised in that also include between step S1 and step S2:
Adopt the blue light epitaxial structure of preparation, green glow epitaxial structure, ultraviolet light epitaxial structure and HONGGUANG epitaxial structure in the method etching step S1 of photoresist mask, retaining the first extension square presetting size respectively on the predeterminated position of each growth substrates, described extension square includes blue light extension square, green glow extension square, ultraviolet light extension square and HONGGUANG extension square.
9. preparation method as claimed in claim 8, it is characterised in that specifically include in step s 2:
S21 is by the bonding of the P type GaN layer in blue light extension square Yu the first temporary support substrate, so that this blue light extension square is transferred to the first temporary position in the first temporary support substrate；
Growth substrates in blue light extension square is removed by S22；
S23 is by the P type GaN layer in green glow extension square and the first temporary support substrate bonding, so that this green glow extension square is transferred to the second temporary position in the first temporary support substrate；
Growth substrates in green glow extension square is removed by S24；
S25 is by the P type GaN layer in ultraviolet light extension square and the first temporary support substrate bonding, so that this ultraviolet light extension square is transferred to the 3rd temporary position in the first temporary support substrate；
Growth substrates in ultraviolet light extension square is removed by S26.
10. a vertical stratification White-light LED chip, it is characterized in that, described vertical stratification White-light LED chip includes a permanent support substrate, includes eliminating the blue light extension square of growth substrates, green glow extension square and HONGGUANG extension square according to what preset rules arranged on described permanent support substrate；Described blue light extension square, green glow extension square and HONGGUANG extension square surface include a N electrode.
11. vertical stratification White-light LED chip as claimed in claim 10, it is characterised in that
The described blue light extension square eliminating growth substrates includes from top to bottom successively: P type GaN layer, active layer and N-type GaN layer；
The described green glow extension square eliminating growth substrates includes from top to bottom successively: P type GaN layer, active layer and N-type GaN layer；
The described HONGGUANG extension square eliminating growth substrates includes from top to bottom successively: P type AlGaInP layer, active layer and N-type AlGaInP layer.
12. the vertical stratification White-light LED chip as described in claim 10 or 11, it is characterized in that, described permanent support substrate includes according to preset rules arrangement eliminate the blue light extension square of growth substrates, green glow extension square and HONGGUANG extension square outside, also include a ultraviolet light extension square eliminating growth substrates.
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