CN105742420A - Method for reducing color temperature of prepared cold white LED by light emitting sheet - Google Patents
Method for reducing color temperature of prepared cold white LED by light emitting sheet Download PDFInfo
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- CN105742420A CN105742420A CN201610226931.2A CN201610226931A CN105742420A CN 105742420 A CN105742420 A CN 105742420A CN 201610226931 A CN201610226931 A CN 201610226931A CN 105742420 A CN105742420 A CN 105742420A
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- cold white
- light
- color temperature
- tiles
- light tiles
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005245 sintering Methods 0.000 claims abstract description 24
- 238000003754 machining Methods 0.000 claims abstract description 9
- 239000012300 argon atmosphere Substances 0.000 claims abstract description 5
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 abstract description 2
- 238000007731 hot pressing Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000002284 excitation--emission spectrum Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a method for reducing color temperature of a prepared cold white LED by a light emitting sheet, and relates to the technical field of ceramics. The method comprises the steps of 1) mixing CaF<2> with CaAlSiN<3>:Eu, performing hot pressing and sintering on the mixture under an argon atmosphere to obtain a blank light emitting sheet; 2) machining the blank light emitting sheet to obtain the light emitting sheet; and 3) enabling the light emitting sheet to be fixed on the prepared cold white LED. The chemical component of the light emitting sheet is mCaF<2>/nCaAlSiN<3>:Eu, wherein m and n are CaF<2> and CaAlSiN<3>:Eu respectively; and the relative mass fractions are as follows: m is greater than or equal to 50% and less than or equal to 99%; and n is greater than or equal to 1% and less than or equal to 50%. The color temperature of the prepared cold white LED can be reduced.
Description
Technical field
The present invention relates to ceramic technology field, especially relate to a kind of method that light tiles reduces Manufactured cold white light LED color temperature.
Background technology
White LED light source has that volume is little, power consumption is low, long service life, high brightness, lower calorific value and the advantage such as sturdy and durable.Classifying colour temperature, white LED light source can be divided into cool white light (high color temperature) and the big class of warm white (low colour temperature) two.In the spectrum that LED light source is launched, contained blue light ratio is more high, and the colour temperature that LED light source is corresponding is more high, otherwise, then colour temperature is low.At present, blue light GaN chip+doping Ce3+, Yellow light-emitting low temperature yttrium-aluminium-garnet (Y3Al5O12:Ce3+, YAG) and fluorescent material is modal cold white light LEDs.In the apparatus, the blue light that GaN sends excites YAG and obtains sodium yellow, and unabsorbed blue light and gold-tinted compound obtain white light.In this type of LED, due to the blue light containing vast scale, cause that the colour temperature of LED is higher, be typically in more than 6400K.
And the LED light source of warm white, adopt green emitting phosphor+red fluorescence powder to convert LED more, or yellow fluorescent powder+red fluorescence powder converts LED.In this type of LED, the ratio of contained blue light is relatively low, and therefore the colour temperature of LED is typically in below 3600K.
It is pointed out that LED light source is once make, and its colour temperature generally cannot change when being left out LED light source aging decay.
Document (research of the .LED blue light leakage security such as Shen Chong Yu. spectroscopy and spectrum analysis .2014,02) problem that reports LED blue light leakage security.Research shows, owing to the eyes of the mankind can be had certain infringement by blue light, therefore indoor should select blue light harm classification be less harmful and non-hazardous, colour temperature in the LED of below 4000K as indoor illumination light fitting.Namely the LED light source of warm white, low colour temperature is recommended.But for the user that have purchased cool white light, high color temperature LED, but due to the feature of LED light source, it is impossible to change its colour temperature, it transform cold white light LEDs as warm white LED.
So far there are no by light tiles reduces the open report of Manufactured cold white light LED color temperature or patent application.
Summary of the invention
Present invention aims to make the problem that cold white light LED color temperature is high, it is provided that a kind of light tiles reduces the method for Manufactured cold white light LED color temperature.
The present invention comprises the following steps:
1) by CaF2And CaAlSiN3: Eu mixes, and under an argon atmosphere, after hot pressed sintering, obtains blank light tiles；
2) blank light tiles is carried out machining, obtain light tiles；
3) light tiles is fixed on Manufactured cold white light LEDs.
In step 1) in, described CaF2With CaAlSiN3: the mass ratio of Eu is m: n；Wherein, m and n respectively CaF2And CaAlSiN3: the mass fractions relative of Eu, 50%≤m≤99%, 1%≤n≤50%, m+n=100%；Described m is preferably 80%～98%, and n is preferably 2%～20%, m+n=100%；The temperature of described hot pressed sintering can be 800～1200 DEG C；The pressure of described hot pressed sintering can be 10～30MPa, and the time of described hot pressed sintering can be 1～6h.
In step 2) in, described machining can adopt at least one in cutting, polishing, polishing etc., shown in described light tiles such as formula (I):
mCaF2/nCaAlSiN3:Eu(I)。
In step 3) in, at least one in the described fixing fixed form such as fixture bonding, mechanical can be adopted fixing.
The invention provides a kind of method that light tiles reduces Manufactured cold white light LED color temperature.The chemical composition of this light tiles is mCaF2/nCaAlSiN3:Eu；Wherein, m and n respectively CaF2And CaAlSiN3: Eu mass fractions relative, 50%≤m≤99%, 1%≤n≤50%.It is an advantage of the invention that and can reduce Manufactured cold white light LED color temperature.
Accompanying drawing explanation
Fig. 1 is the photo of the light tiles obtained in the embodiment of the present invention 1；
Fig. 2 is the spectrogram of the light tiles obtained in the embodiment of the present invention 1；
Fig. 3 is the spectrogram of the LED obtained in comparative example 1 of the present invention；
Fig. 4 is the spectrogram of the LED obtained in the embodiment of the present invention 2.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, technical scheme is carried out clear, complete description, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art it may also be made that other embodiments.
The invention provides a kind of method that light tiles reduces Manufactured cold white light LED color temperature, use the light tiles as shown in formula (I):
mCaF2/nCaAlSiN3:Eu(I)；
Wherein, 50%≤m≤99%, 1%≤n≤50%, m+n=100%；M is preferably 80%～98%, and n is preferably 2%～20%；In embodiments more provided by the invention, m is preferably 90%, and n is preferably 10%；
Preparation method and the occupation mode of light tiles are as follows: by CaF2And CaAlSiN3: Eu mixes, and adopts hot pressed sintering mode, under an argon atmosphere, under certain sintering temperature and sintering pressure, through certain sintering time, obtains blank light tiles；CaF in blank light tiles2With CaAlSiN3: the mass ratio of Eu is m:n；Wherein, m and n respectively CaF2And CaAlSiN3: Eu mass fractions relative, 50%≤m≤99%, 1%≤n≤50%, m+n=100%.
In the present invention, described sintering temperature is preferably 800～1200 DEG C, and described sintering time is preferably 1～6h, and described sintering pressure is preferably 10～30MPa；In embodiments more provided by the invention, described sintering temperature is preferably 1000 DEG C, and described sintering pressure is preferably 20MPa；Described sintering time is preferably 3h.
Blank light tiles is carried out machining, obtains light tiles.
In the present invention, described machining is at least one in the machining modes such as cutting, polishing, polishing, and in embodiments more provided by the invention, described machining preferably polishes.
Light tiles is fixed on Manufactured cold white light LEDs.
In the present invention, described in be fixed as at least one in the fixed forms such as fixture bonding, mechanical is fixing, in embodiments more provided by the invention, described fixing preferably bonding.
The present invention is with CaF2/CaAlSiN3: Eu is light tiles, attaches it on Manufactured cold white light LEDs, it is possible to reduce the colour temperature of cold white light LEDs, reduces the blue light ingredient of radiation in cold white light LEDs.
In order to further illustrate the present invention, the method a kind of light tiles provided by the invention being reduced Manufactured cold white light LED color temperature below in conjunction with embodiment is described in detail.
Embodiment 1
Raw material is CaF2(analytical pure) and CaAlSiN3(commercially available), mass ratio is 90: 10, is ground by above-mentioned raw materials, in hot pressing furnace, and under an argon atmosphere, hot pressed sintering, sintering temperature is 1000 DEG C；Sintering pressure is 20MPa；Sintering time is 3h.After sintering, furnace cooling, to room temperature, obtains blank light tiles, blank light tiles is polished, obtains light tiles.
The photo in kind of light tiles is as shown in Figure 1.
Utilize fluorescence spectrophotometer to be analyzed embodiment 1 obtains light tiles, obtain its excitation spectrum and emission spectrum figure, as shown in Figure 2.This light tiles visible can in blue-light excited lower transmitting HONGGUANG.
Comparative example 1
The cold white-light LED bulb that label taking claims colour temperature to be 6700K is installed in spectral radiometer, measures the actual colour temperature under illuminating state of bulb lamp.
Measurement result shows, the actual colour temperature of cold white-light LED bulb is 6500K, and in spectrum, blue light proportion is significantly higher.The spectrum of cold white-light LED bulb is as shown in Figure 3.
Embodiment 2
Cold white-light LED bulb is taken out from spectral radiometer, the shell of bulb lamp is taken off, with glue, the light tiles obtained in embodiment 1 is bonded in the LED lamp bead in cold white-light LED bulb, then the shell of bulb lamp is installed back on bulb lamp, the cold white-light LED bulb being mounted with light tiles is reinstalled in spectral radiometer, measures the actual colour temperature under illuminating state of bulb lamp.
Measurement result shows, is mounted with that the actual colour temperature of the cold white-light LED bulb of light tiles is reduced to 3100K by for 6500K, and in spectrum, blue light proportion substantially reduces.It is mounted with the spectrum of cold white-light LED bulb of light tiles as shown in Figure 4.
Claims (8)
1. the method reducing Manufactured cold white light LED color temperature by light tiles, it is characterised in that comprise the following steps:
1) by CaF2And CaAlSiN3: Eu mixes, and under an argon atmosphere, after hot pressed sintering, obtains blank light tiles；
2) blank light tiles is carried out machining, obtain light tiles；
3) light tiles is fixed on Manufactured cold white light LEDs.
2. a kind of method that light tiles reduces Manufactured cold white light LED color temperature as claimed in claim 1, it is characterised in that in step 1) in, described CaF2With CaAlSiN3: the mass ratio of Eu is m: n；Wherein, m and n respectively CaF2And CaAlSiN3: the mass fractions relative of Eu, 50%≤m≤99%, 1%≤n≤50%, m+n=100%.
3. a kind of method that light tiles reduces Manufactured cold white light LED color temperature as claimed in claim 2, it is characterised in that described m is 80%～98%, and n is 2%～20%, m+n=100%.
4. a kind of method that light tiles reduces Manufactured cold white light LED color temperature as claimed in claim 1, it is characterized in that in step 1) in, the temperature of described hot pressed sintering is 800～1200 DEG C, and the pressure of described hot pressed sintering is 10～30MPa, and the time of described hot pressed sintering is 1～6h.
5. a kind of method that light tiles reduces Manufactured cold white light LED color temperature as claimed in claim 1, it is characterised in that in step 2) in, described machining adopts at least one in cutting, polishing, polishing.
6. a kind of method that light tiles reduces Manufactured cold white light LED color temperature as claimed in claim 1, it is characterised in that in step 2) in, shown in described light tiles such as formula (I):
mCaF2/nCaAlSiN3:Eu(I)。
7. a kind of method that light tiles reduces Manufactured cold white light LED color temperature as claimed in claim 1, it is characterised in that in step 3) in, at least one during described fixing employing fixture bonding, mechanical is fixing.
8. as claimed in claim 7 a kind of light tiles reduce Manufactured cold white light LED color temperature method, it is characterised in that described in be fixed as bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610226931.2A CN105742420A (en) | 2016-04-13 | 2016-04-13 | Method for reducing color temperature of prepared cold white LED by light emitting sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610226931.2A CN105742420A (en) | 2016-04-13 | 2016-04-13 | Method for reducing color temperature of prepared cold white LED by light emitting sheet |
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| CN105742420A true CN105742420A (en) | 2016-07-06 |
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| CN201610226931.2A Pending CN105742420A (en) | 2016-04-13 | 2016-04-13 | Method for reducing color temperature of prepared cold white LED by light emitting sheet |
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| CN101303959A (en) * | 2007-05-07 | 2008-11-12 | Nec照明株式会社 | Fluorescent lamp |
| CN101501160A (en) * | 2006-08-11 | 2009-08-05 | 默克专利有限公司 | LED conversion phosphors in the form of ceramic bodies |
| CN101697367A (en) * | 2009-09-30 | 2010-04-21 | 烁光特晶科技有限公司 | Method for preparing LED by using transparent ceramics |
| EP2242119A1 (en) * | 2008-02-07 | 2010-10-20 | Mitsubishi Chemical Corporation | Semiconductor light emitting device, backlighting device, color image display device and phosphor used for those devices |
| CN101910926A (en) * | 2008-01-03 | 2010-12-08 | 皇家飞利浦电子股份有限公司 | Display device and illumination device |
| US20110084293A1 (en) * | 2006-12-22 | 2011-04-14 | Koninklijke Philips Electronics N.V. | Multi-grain luminescent ceramics for light emitting devices |
| CN102782089A (en) * | 2010-02-04 | 2012-11-14 | 日东电工株式会社 | Light emissive ceramic laminate and method of making same |
-
2016
- 2016-04-13 CN CN201610226931.2A patent/CN105742420A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101501160A (en) * | 2006-08-11 | 2009-08-05 | 默克专利有限公司 | LED conversion phosphors in the form of ceramic bodies |
| US20110084293A1 (en) * | 2006-12-22 | 2011-04-14 | Koninklijke Philips Electronics N.V. | Multi-grain luminescent ceramics for light emitting devices |
| CN101303959A (en) * | 2007-05-07 | 2008-11-12 | Nec照明株式会社 | Fluorescent lamp |
| CN101910926A (en) * | 2008-01-03 | 2010-12-08 | 皇家飞利浦电子股份有限公司 | Display device and illumination device |
| EP2242119A1 (en) * | 2008-02-07 | 2010-10-20 | Mitsubishi Chemical Corporation | Semiconductor light emitting device, backlighting device, color image display device and phosphor used for those devices |
| CN101697367A (en) * | 2009-09-30 | 2010-04-21 | 烁光特晶科技有限公司 | Method for preparing LED by using transparent ceramics |
| CN102782089A (en) * | 2010-02-04 | 2012-11-14 | 日东电工株式会社 | Light emissive ceramic laminate and method of making same |
Non-Patent Citations (1)
| Title |
|---|
| 余泉茂等: "《无机发光材料研究及应用新进展》", 30 June 2010, 中国科学技术大学出版社，第1版 * |
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| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhou Tianliang Inventor after: Zhuang Yixi Inventor before: Jie Rongjun Inventor before: Zhou Tianliang Inventor before: Zhuang Yixi |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160706 |