CN105742228A - Semiconductor device manufacturing method - Google Patents
Semiconductor device manufacturing method Download PDFInfo
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- CN105742228A CN105742228A CN201410747720.4A CN201410747720A CN105742228A CN 105742228 A CN105742228 A CN 105742228A CN 201410747720 A CN201410747720 A CN 201410747720A CN 105742228 A CN105742228 A CN 105742228A
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- conductive powder
- tsv
- filled
- tsv hole
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 55
- 239000000843 powder Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000010146 3D printing Methods 0.000 claims abstract description 6
- 238000012856 packing Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 238000010309 melting process Methods 0.000 description 6
- 239000000155 melt Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a semiconductor manufacturing method, which is characterized in that after TSV holes are formed through etching, a 3D material increasing mode is adopted for TSV filling, firstly, conductive powder is filled in the TSV holes through a 3D printing technology, and then the powder is melted to form TSV filling materials. The method can fill TSV with small size and high depth-width ratio without generating a cavity or an air gap; meanwhile, the invention does not need a mask, overcomes the defects in the prior art and obtains the filling method with good speed and quality.
Description
Technical field
The present invention relates to method, semi-conductor device manufacturing method field, especially, relate to a kind of TSV (ThroughSiliconVia) fill method adopting 3D increasing material mode.
Background technology
TSV formation is an important topic of field of semiconductor manufacture.Conventional TSV forming method comprises the steps:
1: patterning TSV photoresist layer；
2: etch TSV；
3: remove bottom oxide；
4: form liner insulating barrier and added with padding insulating barrier；
5: remove bottom insulation layer；
6: form Seed Layer and barrier layer；
7: fill TSV metal, for instance plating Cu.
Along with constantly reducing of feature sizes of semiconductor devices, the etching of TSV and subsequently metal filled become more and more difficult, and semiconductor fabrication process is difficult to obtain the balance of quality and speed.Such as, filling mode best at present is ALCVD, but its handling capacity is very low, affects production capacity.
Accordingly, it is desirable to provide one more effectively TSV fill method, to meet the requirement of filling quality and speed simultaneously.
Summary of the invention
The present invention proposes a kind of semiconductor making method, adopts 3D to increase material mode and carries out TSV filling, to overcome defect of the prior art, it is thus achieved that the fill method that speed and quality are all good.
The present invention provides a kind of method, semi-conductor device manufacturing method, wherein, comprises the steps:
Semiconductor substrate is provided, this Semiconductor substrate is formed TSV hole；
3D is adopted to print technique filled conductive powder in above-mentioned TSV hole；
Above-mentioned conductive powder is melted, to form TSV packing material.
According to an aspect of the present invention, in above-mentioned TSV hole during filled conductive powder, print technique only with 3D once and above-mentioned TSV hole is filled up.
According to an aspect of the present invention, in above-mentioned TSV hole during filled conductive powder, adopt 3D repeatedly to print technique and above-mentioned TSV hole is filled up；When adopting 3D printing technique repeatedly to be filled up by above-mentioned TSV hole, the described conductive powder that each time is filled is identical material or is different materials.
According to an aspect of the present invention, described conductive powder is selected from two or more the combination of TiN, W, Al, Cu or above material.
According to an aspect of the present invention, 3D is adopted to print technique in above-mentioned TSV hole after filled conductive powder, outside above-mentioned TSV hole and be absent from described conductive powder；Adhesive tape is adopted to remove the described conductive powder being positioned at outside above-mentioned TSV hole, to guarantee outside above-mentioned TSV hole and to be absent from described conductive powder.
It is an advantage of the current invention that: after etching forms TSV hole, have employed 3D increasing material mode and carry out TSV filling, first pass through 3D printing technique filled conductive powder among TSV hole, wherein, filling can complete in disposable filling, it is also possible to by repeatedly having filled；Then, by powder smelting to form TSV packing material.The method can fill the TSV of small size, high-aspect-ratio, will not produce cavity or air gap；Further, the present invention is not required to mask.Instant invention overcomes defect of the prior art, it is thus achieved that the fill method that speed and quality are all good.
Accompanying drawing explanation
Fig. 1 has the substrate of TSV hole
The disposable filled conductive powder of Fig. 2
Fig. 3 first time is partially filled with conductive powder
Fig. 4 melts to form packing material
Fig. 5 melts to form Part I packing material
Fig. 6 is partially filled with conductive powder again
Fig. 7 melts formation Part II packing material
Fig. 8 repeatedly fills-melts and forms packing material
Detailed description of the invention
Hereinafter, by the specific embodiment shown in accompanying drawing, the present invention is described.However, it should be understood that these descriptions are illustrative of, and it is not intended to limit the scope of the present invention.Additionally, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring idea of the invention.
The present invention provides a kind of method, semi-conductor device manufacturing method, increases material mode in particular to a kind of 3D of employing and carries out the method, semi-conductor device manufacturing method of TSV filling.Below, referring to accompanying drawing 1-8, will be described in method, semi-conductor device manufacturing method provided by the invention.
First, referring to accompanying drawing 1, it is provided that Semiconductor substrate 1, TSV hole 2 is formed on semiconductor substrate 1.Alternatively, the sidewall of TSV hole 2 being formed with laying 3, the material of laying 3 can be insulant can also be conductive material, for instance SiO2、HfO2Deng.
Then, referring to accompanying drawing 2,3D is adopted to print technique filled conductive powder 4 in TSV hole 2.3D prints technique and belongs to a kind of increasing material manufacture method (Additivemethod), it is possible to accurately, efficiently control the quantity and position that form material.In the present invention, adopt 3D to print technique filled conductive powder in TSV hole 2, eliminate the mask required for common process on the one hand, on the other hand, it is ensured that the quality of technique and speed.Wherein, the material of conductive powder 4 includes, but are not limited to TiN, W, Al, Cu or the combination of two or more in above material.3D is adopted to print technique in TSV hole 2 after filled conductive powder 4, outside TSV hole and be absent from conductive powder 4.For this, it is possible to adopt adhesive tape to remove the conductive powder being positioned in position print procedure outside TSV hole 2, to guarantee outside TSV hole 2 and to be absent from conductive powder.
It follows that referring to accompanying drawing 2, it is possible to print technique only with 3D once and TSV hole 2 is filled up；3D can also being adopted repeatedly to print technique filled up by TSV hole 2, referring to accompanying drawing 3, wherein, first, fill ground floor conductive powder 41, it has been only filled with the TSV hole 2 of partial depth.
Then, referring to accompanying drawing 4, conductive powder 4 is melted, to form TSV packing material 5.For being partially filled with situation in Fig. 3, what ground floor conductive powder 41 was melted formation is TSV Part I packing material 51.The technique of fusing conductive powder 4 is preferably laser annealing.The melting process including laser annealing is not required to extra mask, meanwhile, by conductive powder fusing is formed material, the generation of cavity or air gap can be avoided, obtain the packing material with good quality, it addition, such technique also has good production efficiency.Especially laser annealing, it can come the position of surface sweeping TSV hole according to TSV domain, carries out melting process more accurately, it is thus achieved that better technological effect.
For the device architecture defining TSV Part I packing material 51, it is possible to print technique by 3D afterwards, continue filled conductive powder 42 in hole, referring to accompanying drawing 6.When adopting such 3D repeatedly to print process filling TSV hole, the conductive powder of each filling can be identical material, it is also possible to for different materials, can customize according to the requirement of device completely.Then, referring to accompanying drawing 7, adopt and form TSV Part II packing material 52 with melting process same before.By filling-melting process repeatedly, until being finally filled up completely with TSV hole, referring to accompanying drawing 8.Repeatedly fill process is compared single fill process, the advantage of can be obtained with is in that: better control over quality and the holes filling quality of packing material, at utmost avoid the appearance in air gap and cavity, and can more be finely controlled packing material kind, to meet the demand of different components.
3D in the present invention prints and fills-melt the technique forming TSV structure, can be compatible with existing semiconductor technology, for example, it is possible to manufactured by the technique of anti-fuse able to programme (ProgrammableAntifuse) or flush memory device (Flashmemory).
In sum, after etching forms TSV hole, have employed 3D printing such a increasing material mode and carry out TSV filling, first pass through 3D printing technique filled conductive powder among TSV hole, then by powder smelting to form TSV packing material, wherein it is possible to only complete to fill by the filling-melting process of single, filling-melting process repeatedly can also be adopted to repeat, to obtain the TSV packing material with better effect.The method can fill the TSV of small size, high-aspect-ratio, will not produce cavity or air gap；Meanwhile, the present invention is not required to mask, overcomes defect of the prior art, it is thus achieved that the fill method that speed and quality are all good.
Above by reference to embodiments of the invention, the present invention is described.But, the purpose that these embodiments are merely to illustrate that, and it is not intended to restriction the scope of the present invention.The scope of the invention and equivalent limits.Without departing from the scope of the present invention, those skilled in the art can make a variety of substitutions and modifications, and these substitutions and modifications all should fall within the scope of the present invention.
Claims (7)
1. a method, semi-conductor device manufacturing method, it is characterised in that comprise the steps:
Semiconductor substrate is provided, this Semiconductor substrate is formed TSV hole；
3D is adopted to print technique filled conductive powder in above-mentioned TSV hole；
Above-mentioned conductive powder is melted, to form TSV packing material.
2. method according to claim 1, it is characterised in that in above-mentioned TSV hole during filled conductive powder, prints technique only with 3D once and is filled up by above-mentioned TSV hole.
3. method according to claim 1, it is characterised in that in above-mentioned TSV hole during filled conductive powder, adopts 3D repeatedly to print technique and is filled up by above-mentioned TSV hole.
4. method according to claim 3, it is characterised in that when adopting 3D printing technique repeatedly to be filled up by above-mentioned TSV hole, the described conductive powder that each time is filled is identical material or is different materials.
5. the method according to any one of claim 1-4, it is characterised in that described conductive powder is selected from two or more the combination of TiN, W, Al, Cu or above material.
6. the method according to any one of claim 1-4, it is characterised in that adopt 3D to print technique in above-mentioned TSV hole after filled conductive powder, outside above-mentioned TSV hole and be absent from described conductive powder.
7. method according to claim 6, it is characterised in that adopt adhesive tape to remove the described conductive powder being positioned at outside above-mentioned TSV hole, to guarantee outside above-mentioned TSV hole and to be absent from described conductive powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410747720.4A CN105742228B (en) | 2014-12-09 | 2014-12-09 | Semiconductor device manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410747720.4A CN105742228B (en) | 2014-12-09 | 2014-12-09 | Semiconductor device manufacturing method |
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| Publication Number | Publication Date |
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| CN105742228A true CN105742228A (en) | 2016-07-06 |
| CN105742228B CN105742228B (en) | 2019-04-19 |
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| CN201410747720.4A Active CN105742228B (en) | 2014-12-09 | 2014-12-09 | Semiconductor device manufacturing method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107520054A (en) * | 2017-08-21 | 2017-12-29 | 广东美的制冷设备有限公司 | Repel pole plate and preparation method thereof and air purifier |
| CN108550635A (en) * | 2018-04-26 | 2018-09-18 | 欧贝黎新能源科技股份有限公司 | A method of MWT battery is made using 3D printing technique |
| CN109622968A (en) * | 2019-02-19 | 2019-04-16 | 南通理工学院 | TSV packaging 3D printer and printing method |
| CN112210309A (en) * | 2020-10-12 | 2021-01-12 | 苏州盛达飞智能科技股份有限公司 | Method for manufacturing electric-conduction heat-conduction foam adhesive tape |
| CN114496912A (en) * | 2022-01-21 | 2022-05-13 | 芯体素(杭州)科技发展有限公司 | Silicon micropore filling method and device, electronic equipment and storage medium |
| CN115440654A (en) * | 2022-04-14 | 2022-12-06 | 合肥本源量子计算科技有限责任公司 | Superconducting interconnection structure and preparation method thereof |
Citations (4)
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|---|---|---|---|---|
| US6258720B1 (en) * | 1998-02-10 | 2001-07-10 | Stmicroelectronics S.A. | Method of formation of conductive lines on integrated circuits |
| US20100154211A1 (en) * | 2008-12-19 | 2010-06-24 | Canon Kabushiki Kaisha | Method for manufacturing wiring board and method for manufacturing inkjet printhead substrate |
| CN102915949A (en) * | 2011-08-01 | 2013-02-06 | 中国科学院微电子研究所 | Method for embedding metal material in substrate |
| CN104167411A (en) * | 2014-08-19 | 2014-11-26 | 中国科学院半导体研究所 | LED array structure |
-
2014
- 2014-12-09 CN CN201410747720.4A patent/CN105742228B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258720B1 (en) * | 1998-02-10 | 2001-07-10 | Stmicroelectronics S.A. | Method of formation of conductive lines on integrated circuits |
| US20100154211A1 (en) * | 2008-12-19 | 2010-06-24 | Canon Kabushiki Kaisha | Method for manufacturing wiring board and method for manufacturing inkjet printhead substrate |
| CN102915949A (en) * | 2011-08-01 | 2013-02-06 | 中国科学院微电子研究所 | Method for embedding metal material in substrate |
| CN104167411A (en) * | 2014-08-19 | 2014-11-26 | 中国科学院半导体研究所 | LED array structure |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107520054A (en) * | 2017-08-21 | 2017-12-29 | 广东美的制冷设备有限公司 | Repel pole plate and preparation method thereof and air purifier |
| CN108550635A (en) * | 2018-04-26 | 2018-09-18 | 欧贝黎新能源科技股份有限公司 | A method of MWT battery is made using 3D printing technique |
| CN109622968A (en) * | 2019-02-19 | 2019-04-16 | 南通理工学院 | TSV packaging 3D printer and printing method |
| CN112210309A (en) * | 2020-10-12 | 2021-01-12 | 苏州盛达飞智能科技股份有限公司 | Method for manufacturing electric-conduction heat-conduction foam adhesive tape |
| CN114496912A (en) * | 2022-01-21 | 2022-05-13 | 芯体素(杭州)科技发展有限公司 | Silicon micropore filling method and device, electronic equipment and storage medium |
| CN115440654A (en) * | 2022-04-14 | 2022-12-06 | 合肥本源量子计算科技有限责任公司 | Superconducting interconnection structure and preparation method thereof |
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| CN105742228B (en) | 2019-04-19 |
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