CN105696072A

CN105696072A - Sapphire crystal growth furnace

Info

Publication number: CN105696072A
Application number: CN201610225493.8A
Authority: CN
Inventors: 赵能伟
Original assignee: Changzhou EGing Photovoltaic Technology Co Ltd
Current assignee: Changzhou EGing Photovoltaic Technology Co Ltd
Priority date: 2016-04-12
Filing date: 2016-04-12
Publication date: 2016-06-22

Abstract

The invention provides a sapphire crystal growth furnace which comprises a ring-shaped internal heater, a ring-shaped external heater and a plurality of crucibles uniformly arranged between the internal heater and the external heater. Cooling devices are arranged at the bottoms of the crucibles, and the internal heater and the external heater are of controllable power. The sapphire crystal growth furnace utilizes ring tungsten heaters with different diameters, the crucibles are arranged between the two ring heaters and distributed symmetrically, the bottom of each crucible is provided with one cooling device, stable temperature field and thermal field are formed by controlling power of the heaters and flow rate and temperature of cooling media, and thus, utilization rate of sapphire crystal growth materials and crystal growth efficiency of large-size crystals are both increased while production cost is reduced.

Description

Sapphire crystallization furnace

Technical field

The present invention relates to LED substrate level sapphire crystal growth technical field, particularly relate to a kind of sapphire crystallization furnace。

Background technology

LED substrate level sapphire crystal growth method mainly has kyropoulos, heat-exchanging method, Bridgman-Stockbarger method etc.。Wherein, the crystal market share of kyropoulos growth reaches more than 85%, kyropoulos adopts single heating device, but when progressively being turned to the large scales such as 4inch and 6inch along with LED substrate crystal bar by 2inch, simple by increasing the diameter of heater thus increasing crucible 3 size and then reaching to increase the purpose of inventory, the sapphire crystal of this kyropoulos growth exists that long brilliant yield is low, crystal laterally draws that rod utilization rate is low, energy consumption and the problem such as relatively costly。Heat-exchanging method can grow greater weight crystal, but crystal is more heavy, and crystal mass is more poor, and is difficult to growth C to crystal。Therefore, heat-exchanging method growing large-size crystal yield is relatively low and relatively costly, be suitable only for growth A to crystal, crystal pro cessing needs laterally draw rod, and stock utilization is low。Bridgman-Stockbarger method is difficult to growth 4inch and above large size sapphire crystal, product quality and size can not meet the market demand。

Summary of the invention

The technical problem to be solved is: the equipment growth sapphire technical difficulty of major diameter of the sapphire crystal growths such as kyropoulos is very big, and the crystalline material of growth can only carry out laterally drawing materials, stock utilization is extremely low, it is generally below 40%, in order to overcome sapphire crystal growth stock utilization in prior art low, long brilliant yield is low and energy consumption and relatively costly deficiency, the present invention provides a kind of sapphire crystallization furnace, adopt and be uniformly arranged multiple crucible between the inside and outside ring heater arranged, multiple sapphire crystal can be grown simultaneously, there is stock utilization height, the advantages such as production cost is low。

This invention address that its technical problem technical scheme to be taken is: a kind of sapphire crystallization furnace, including annular internal heater and external heat device and be uniformly arranged on the multiple crucibles between described internal heater and external heat device, described crucible bottom is provided with chiller, and the power of described internal heater and external heat device is controlled。

Concrete, described chiller includes the import and the outlet that are interconnected, is provided with cooling medium in described chiller, and described cooling medium is flowed to Way out by import, and the flow of described cooling medium and temperature are controlled。

Preferably, described cooling medium is water or helium。

Adopting inside-and-outside ring heater and bottom coohng device so that crucible surrounding heats, bottom heat radiation, formed by the distribution of heater and crucible and stablize controlled thermal field, the power of two heaters of control is formed and stablizes controlled warm field respectively；By accurately controlling flow and the temperature of crucible bottom cooling medium, control heat loss, thus controlling thermal field gradient from lower to upper；Stablize the formation of controlled warm field and thermal field, make crystalline material utilization rate bring up to 90%, drastically increase the utilization rate of sapphire crystallization material and the crystal forming rate of large-size crystals, reduce production cost。

Further, in order to make temperature field and thermal field more stable, also including top heater, described top heater is positioned at the top of described crucible。After top increases heater, surrounding and the top of crucible are all heated, bottom heat radiation, make the thermal field around crucible more stable, it is possible to improve stock utilization and crystal forming rate further。

Preferably, the ratio of height to diameter of described crucible is between 0.8～1.5。

Preferably, in order to ensure that crucible can be placed between inside and outside heater, distance between described internal heater and described external heat device is more than the diameter of described crucible, and the diameter difference between described internal heater and described external heat device is more than the diameter of the described crucible of twice。

Further, also including water-cooled fireplace, described water-cooling wall ring is located at outside described external heat device。Also include some other equipment due to long crystal furnace, in heating process, peripheral equipment also can raise because of work or heater heat radiation temperature, therefore, adopts water-cooled fireplace that equipment is cooled, it is ensured that equipment properly functioning。

Preferably, described crucible is 4,5 or 6。Multiple crucible is adopted to increase production efficiency。

The invention has the beneficial effects as follows: a kind of sapphire crystallization furnace provided by the invention, adopt the annular tungsten heater of two kinds of different-diameters, tungsten crucible is placed between two ring heaters, and be uniformly and symmetrically distributed, every crucible bottom is respectively provided with chiller, by the flow of the power of control heater and cooling medium and temperature, form stable warm field and thermal field, the utilization rate of long brilliant material can reach more than 90%, thus drastically increasing the utilization rate of sapphire crystallization material and the crystal forming rate of large-size crystals, reduce production cost。

Accompanying drawing explanation

Below in conjunction with drawings and Examples, the invention will be further described。

Fig. 1 is the structural representation of preferred embodiment；

Fig. 2 is the structural representation of four crucible sapphire crystallization furnace；

Fig. 3 is the structural representation of six crucible sapphire crystallization furnace。

In figure: 1, internal heater, 2, external heat device, 3, crucible, 4, chiller, 41, import, 42, outlet, 43, cooling medium, 5, water-cooled fireplace。

Detailed description of the invention

Presently in connection with accompanying drawing, the present invention is described in detail。This figure is the schematic diagram simplified, and the basic structure of the present invention is only described in a schematic way, and therefore it only shows the composition relevant with the present invention。

As Figure 1-3, a kind of sapphire crystallization furnace of the present invention, internal heater 1 and external heat device 2 including annular, it is internal that internal heater 1 is positioned at external heat device 2, internal heater 1 and external heat device 2 are the annular tungsten heater of two kinds of different-diameters, multiple charging crucible 3 can be uniformly arranged between internal heater 1 and external heat device 2, crucible 3 adopts tungsten crucible, grow multiple crystal simultaneously, inside and outside heater 1, 2 make crucible 3 surrounding heat, and top can also increase heater, bottom heat radiation, formed and stablize controlled thermal field, by controlling the power of inside and outside two heaters respectively, stablizing of temperature field can be controlled。Regulate the ratio of inside and outside heater 1,2 diameter, it is possible to the crucible 3 of design different-diameter and quantity, greatly meet the demand of different product。The advantage that crucible 3 quantity is 2 or 3 economic advantages embodied and production efficiency is less, and crucible 3 placement is preferably symmetrically placed, therefore, crucible 3 quantity can be 4 or 6, crucible 3 diameter can be customized according to customer requirement, diameter can at more than 2inch, such as 4.5inch, 6.5inch or 8.5inch。General ratio of height to diameter controls between 0.8～1.5, come in LED existing market main product 4inch and 6inch, 6 crucibles 3 can be designed between ring heater, in order to grow 6 sapphire crystals simultaneously, crucible 3 diameter can separately design as 4.5inch and 6.5inch, crucible 3 is 170mm and 220mm highly respectively, substantially increases production capacity, and long brilliant stock utilization may be up to more than 90%。Distance b between described internal heater 1 and described external heat device 2 is more than the diameter a of described crucible 3, and namely the diameter difference between described internal heater 1 and described external heat device 2 is more than the diameter a of the described crucible 3 of twice。For crucible 3 diameter a for 4.5inch, the distance b between internal heater 1 and external heat device 2 is more than 4.5inch。

Sapphire crystallization furnace top design has two schemes: one, without heater, but has insulation material, namely heater surrounding and up and down all adopt insulation material be incubated；Its two, have in top heater situation, the outside (namely above top heater) of top heater increase insulation material be incubated。

Heat exchanger it is respectively provided with as chiller 4 bottom every crucible 3, chiller 4 includes import 41 and the outlet 42 being interconnected, cooling medium 43 it is provided with in chiller 4, cooling medium 43 is flowed to exporting 42 directions by import 41, in figure, arrow represents the flow direction of cooling medium 43, the flow of cooling medium 43 and temperature are controlled, cooling medium 43 may select water or helium, by water or helium, heat bottom crucible 3 is derived, by accurately controlling flow and the temperature of crucible 3 bottom coohng medium 43, control heat loss, thus controlling thermal field gradient from lower to upper。

External heat device 2 is outside is also equipped with water-cooled fireplace 5, for ancillary equipment is cooled。

Large-size crystals growth is converted into the growth of multiple small-sized crystals by the present invention, reduces crystal growth difficulty。For the crystal growth of current main-stream 85KG, adopting traditional kyropoulos to be only capable of processing 4inch crystal bar, highly reach 600mm and single crystal 85KG, technical difficulty is bigger。And adopt the sapphire crystallization furnace of the present invention only to need 4 4.5inch crucibles 3, and the 4inch crystal bar of 4 200mm height can be grown, so single crystal growth weight is only 10KG。Can loading 4 crucibles 3 being respectively arranged with 10KG material, carrying out 4 is the growth of 10KG crystal respectively, thus greatly reduces crystal Weight Loaded, improves stock utilization simultaneously。

With the above-mentioned desirable embodiment according to the present invention for enlightenment, by above-mentioned description, relevant staff not necessarily departing from the scope of the present invention, can carry out various change and amendment completely。The technical scope of this invention is not limited to the content in description, it is necessary to determine its technical scope according to right。

Claims

1. a sapphire crystallization furnace, it is characterized in that: include annular internal heater (1) and external heat device (2) and the multiple crucibles (3) being uniformly arranged between described internal heater (1) and external heat device (2), described crucible (3) bottom is provided with chiller (4), and the power of described internal heater (1) and external heat device (2) is controlled。

2. sapphire crystallization furnace as claimed in claim 1, it is characterized in that: described chiller (4) includes the import (41) and the outlet (42) that are interconnected, cooling medium (43) it is provided with in described chiller (4), described cooling medium (43) is by import (41) to the flowing of outlet (42) direction, and the flow of described cooling medium (43) and temperature are controlled。

3. sapphire crystallization furnace as claimed in claim 2, it is characterised in that: described cooling medium (43) is water or helium。

4. sapphire crystallization furnace as claimed in claim 1, it is characterised in that: also including top heater, described top heater is positioned at the top of described crucible (3)。

5. the sapphire crystallization furnace as described in claim 1 or 4, it is characterised in that: the ratio of height to diameter of described crucible (3) is between 0.8～1.5。

6. sapphire crystallization furnace as claimed in claim 5, it is characterized in that: the distance between described internal heater (1) and described external heat device (2) is more than the diameter of described crucible (3), and the diameter difference between described internal heater (1) and described external heat device (2) is more than the diameter of the described crucible (3) of twice。

7. the sapphire crystallization furnace as described in claim 1 or 4, it is characterised in that: also including water-cooled fireplace (5), it is outside that described water-cooled fireplace (5) ring is located at described external heat device (2)。

8. sapphire crystallization furnace as claimed in claim 1, it is characterised in that: described crucible (3) is 4 or 6。