CN105648334A - Power cable clamp - Google Patents
Power cable clamp Download PDFInfo
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- CN105648334A CN105648334A CN201610208886.8A CN201610208886A CN105648334A CN 105648334 A CN105648334 A CN 105648334A CN 201610208886 A CN201610208886 A CN 201610208886A CN 105648334 A CN105648334 A CN 105648334A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/16—Ferrous alloys, e.g. steel alloys containing copper
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/18—Hardening; Quenching with or without subsequent tempering
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C33/00—Making ferrous alloys
- C22C33/02—Making ferrous alloys by powder metallurgy
- C22C33/0207—Using a mixture of prealloyed powders or a master alloy
- C22C33/0228—Using a mixture of prealloyed powders or a master alloy comprising other non-metallic compounds or more than 5% of graphite
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C33/00—Making ferrous alloys
- C22C33/02—Making ferrous alloys by powder metallurgy
- C22C33/0257—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements
- C22C33/0264—Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements the maximum content of each alloying element not exceeding 5%
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/005—Ferrous alloys, e.g. steel alloys containing rare earths, i.e. Sc, Y, Lanthanides
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/02—Ferrous alloys, e.g. steel alloys containing silicon
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/04—Ferrous alloys, e.g. steel alloys containing manganese
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
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- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
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- C22C38/18—Ferrous alloys, e.g. steel alloys containing chromium
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- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/18—Ferrous alloys, e.g. steel alloys containing chromium
- C22C38/32—Ferrous alloys, e.g. steel alloys containing chromium with boron
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/34—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in more than one step
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
- H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
- H02G3/02—Details
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Abstract
A power cable clamp is characterized in that raw material powder for manufacturing the power cable clamp comprises components in parts by mole as follows: 120-130 parts of Fe powder, 5-6 parts of Cu powder, 3-4 parts of Zn powder, 1-2 parts of SiC, 1-2 parts of Mn powder, 0.8-0.9 parts of TiB2, 0.6-0.7 parts of Cr powder, 0.4-0.5 parts of Cr3C2, 0.4-0.5 parts of V powder, 0.2-0.3 parts of Y2O3 and 0.1-0.2 parts of CeO2. Stepped annealing is performed after sintering, so that a material microstructure is homogenized, and the surface hardness and strength as well as oxidation resistance of a workpiece are improved with a nitriding procedure and a boriding procedure.
Description
Technical field
The present invention relates to a kind of power cable card hoop, belongs to power cable technical field.
Background technology
At present, cable card hoop is widely used on the pipeline of engine in aviation, space flight industry, electronic system circuit, and pipeline, circuit are play fastening, fixed support effect. In these industries, product performance are required high, and the material to product, intensity, structure, the performance requriementss such as weight are higher, and other products non-can substitute. General product when these industry applications, card hoop bending part vibrations that can't stand aircraft because holding and cable etc. is scurried out from card hoop, even have the possibility that bending part ruptures, and in the environment that some is special, the product of general property cannot meet its requirement.
Summary of the invention
A kind of power cable card hoop, it is characterised in that, the raw material powder manufacturing power cable card hoop by (molePart); Iron powder 120-130 part, Cu powder 5-6 part, Zn powder 3-4 part, silicon carbide 1-2 part, Mn powder 1-2 part, TiB2 0.8-0.9 part, Cr powder 0.6-0.7 part, chromium carbide 0.4-0.5 part, V powder 0.4-0.5 part, yttrium oxide 0.2-0.3 part, cerium oxide 0.1-0.2 part forms,
First iron powder is taken according to aforementioned proportion, Cu powder, Zn powder, silicon carbide, Mn powder, TiB2, Cr powder, chromium carbide, V powder, yttrium oxide, cerium oxide raw material powder also mixes, and carries out ball-milling processing according to ratio of grinding media to material 15:1, ball milling time 30h, apply the high-purity argon gas of more than 99.9%, obtain compound after ball milling;
The mixed powder of above-mentioned acquisition is dry, screening, press forming; Then carry out vacuum sintering, carry out when temperature rise rate 35 DEG C/min is warming up to 1190 DEG C insulation 1 hour, after be cooled to 1150 DEG C, rate of temperature fall 15 DEG C/h, be incubated 3 hours, after be again cooled to 1130 DEG C, rate of temperature fall 20 DEG C/h, being incubated 2 hours, rear sky is chilled to room temperature
Afterwards blank is annealed, annealing temperature 640 DEG C, insulation 2-3h, after be warming up to 680 DEG C, temperature rise rate 12 DEG C/h, be incubated 4 hours, after be warming up to 740 DEG C, temperature rise rate 25 DEG C/h, be incubated 5 hours, furnace cooling; Carry out machining,
Blank carrying out oil afterwards quench process, the temperature of quench treatment is 970-980 DEG C, carries out temper afterwards:: from room temperature, workpiece being heated to 530 DEG C, temperature rise rate 50 DEG C/h, be incubated 4 hours, rear sky is chilled to room temperature,
Carrying out nitriding operation afterwards: temperature 850-860 DEG C of nitrogen gesture 0.5%, insulation 2h, then raise nitrogen gesture to 0.9%, insulation 3h, furnace temperature is down to 700-710 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards;
Carry out plasma boronising afterwards, adopt boron fluoride+boron chloride gas as boron source, high-voltage electric field makes its boron ionization thus carries out boronising, first initial temperature is 630 DEG C, the throughput ratio (volume ratio) of boron fluoride and boron chloride is 3:2, it is incubated 2 hours, it is cooled to 570 DEG C afterwards, the throughput ratio (volume ratio) of adjustment boron fluoride and boron chloride, to 2:5, is incubated 1 hour, is cooled to 530 DEG C afterwards, the throughput ratio of adjustment boron fluoride and boron chloride is to 1:1, it is incubated 3 hours, naturally cooling, obtains power cable card hoop.
Described a kind of power cable card hoop, nitriding operation: temperature 850 DEG C of nitrogen gesture 0.5%, insulation 2h, then raises nitrogen gesture to 0.9%, insulation 3h, and furnace temperature is down to 700 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards.
Described a kind of power cable card hoop, nitriding operation: temperature 860 DEG C of nitrogen gesture 0.5%, insulation 2h, then raises nitrogen gesture to 0.9%, insulation 3h, and furnace temperature is down to 710 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards.
Described a kind of power cable card hoop, nitriding operation: temperature 855 DEG C of nitrogen gesture 0.5%, insulation 2h, then raises nitrogen gesture to 0.9%, insulation 3h, and furnace temperature is down to 705 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards.
Described a kind of power cable card hoop, manufacture power cable card hoop raw material powder by (molePart); Iron powder 120 parts, 5 parts, Cu powder, 3 parts, Zn powder, 1 part, silicon carbide, 1 part, Mn powder, TiB2 0.8 part, 0.6 part, Cr powder, chromium carbide 0.4 part, 0.4 part, V powder, yttrium oxide 0.2 part, cerium oxide 0.1 part composition.
Described a kind of power cable card hoop, manufacture power cable card hoop raw material powder by (molePart); Iron powder 130 parts, 6 parts, Cu powder, 4 parts, Zn powder, 2 parts, silicon carbide, 2 parts, Mn powder, TiB2 0.9 part, 0.7 part, Cr powder, chromium carbide 0.5 part, 0.5 part, V powder, yttrium oxide 0.3 part, cerium oxide 0.2 part composition.
Described a kind of power cable card hoop, manufacture power cable card hoop raw material powder by (molePart); Iron powder 125 parts, 5.5 parts, Cu powder, 3.5 parts, Zn powder, 1.5 parts, silicon carbide, 1.5 parts, Mn powder, TiB2 0.85 part, 0.65 part, Cr powder, chromium carbide 0.45 part, 0.45 part, V powder, yttrium oxide 0.25 part, cerium oxide 0.15 part composition.
Described a kind of power cable card hoop, the temperature of quench treatment is 970 DEG C.
Described a kind of power cable card hoop, the temperature of quench treatment is 980 DEG C.
Described a kind of power cable card hoop, the temperature of quench treatment is 975 DEG C.
The manufacture method of a kind of power cable card hoop, it is characterised in that, manufacture power cable card hoop raw material powder by (molePart); Iron powder 120-130 part, Cu powder 5-6 part, Zn powder 3-4 part, silicon carbide 1-2 part, Mn powder 1-2 part, TiB2 0.8-0.9 part, Cr powder 0.6-0.7 part, chromium carbide 0.4-0.5 part, V powder 0.4-0.5 part, yttrium oxide 0.2-0.3 part, cerium oxide 0.1-0.2 part forms,
First iron powder is taken according to aforementioned proportion, Cu powder, Zn powder, silicon carbide, Mn powder, TiB2, Cr powder, chromium carbide, V powder, yttrium oxide, cerium oxide raw material powder also mixes, and carries out ball-milling processing according to ratio of grinding media to material 15:1, ball milling time 30h, apply the high-purity argon gas of more than 99.9%, obtain compound after ball milling;
The mixed powder of above-mentioned acquisition is dry, screening, press forming; Then carry out vacuum sintering, carry out when temperature rise rate 35 DEG C/min is warming up to 1190 DEG C insulation 1 hour, after be cooled to 1150 DEG C, rate of temperature fall 15 DEG C/h, be incubated 3 hours, after be again cooled to 1130 DEG C, rate of temperature fall 20 DEG C/h, being incubated 2 hours, rear sky is chilled to room temperature
Afterwards blank is annealed, annealing temperature 640 DEG C, insulation 2-3h, after be warming up to 680 DEG C, temperature rise rate 12 DEG C/h, be incubated 4 hours, after be warming up to 740 DEG C, temperature rise rate 25 DEG C/h, be incubated 5 hours, furnace cooling;Carry out machining,
Blank carrying out oil afterwards quench process, the temperature of quench treatment is 970-980 DEG C, carries out temper afterwards:: from room temperature, workpiece being heated to 530 DEG C, temperature rise rate 50 DEG C/h, be incubated 4 hours, rear sky is chilled to room temperature,
Carrying out nitriding operation afterwards: temperature 850-860 DEG C of nitrogen gesture 0.5%, insulation 2h, then raise nitrogen gesture to 0.9%, insulation 3h, furnace temperature is down to 700-710 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards;
Carry out plasma boronising afterwards, adopt boron fluoride+boron chloride gas as boron source, high-voltage electric field makes its boron ionization thus carries out boronising, first initial temperature is 630 DEG C, the throughput ratio (volume ratio) of boron fluoride and boron chloride is 3:2, it is incubated 2 hours, it is cooled to 570 DEG C afterwards, the throughput ratio (volume ratio) of adjustment boron fluoride and boron chloride, to 2:5, is incubated 1 hour, is cooled to 530 DEG C afterwards, the throughput ratio of adjustment boron fluoride and boron chloride is to 1:1, it is incubated 3 hours, naturally cooling, obtains power cable card hoop.
Foregoing invention content is relative to the useful effect of prior art: 1) power cable card hoop of the present invention employs iron powder, Cu powder, Zn powder, silicon carbide, Mn powder, TiB2, Cr powder, chromium carbide, V powder, yttrium oxide, cerium oxide raw material powder, this material composition improves the intensity of product by compacting sintering; 2) being mixed by powder, compacting sintering, annealing, quenching, the operations such as tempering make manufacturing process intensive, reduce production cost; 3) after sintering, segmentation annealing makes material microstructure homogenizing, 4) nitriding operation and plasma boronising operation improve the surface hardness of workpiece and intensity and scale resistance.
Embodiment
In order to the technology feature to the present invention, object and effect have understanding clearly, now the specific embodiment of the present invention is described in detail.
Embodiment 1
A kind of power cable card hoop, it is characterised in that, the raw material powder manufacturing power cable card hoop by (molePart); Iron powder 120 parts, 5 parts, Cu powder, 3 parts, Zn powder, 1 part, silicon carbide, 1 part, Mn powder, TiB2 0.8 part, 0.6 part, Cr powder, chromium carbide 0.4 part, 0.4 part, V powder, yttrium oxide 0.2 part, cerium oxide 0.1 part composition,
First iron powder is taken according to aforementioned proportion, Cu powder, Zn powder, silicon carbide, Mn powder, TiB2, Cr powder, chromium carbide, V powder, yttrium oxide, cerium oxide raw material powder also mixes, and carries out ball-milling processing according to ratio of grinding media to material 15:1, ball milling time 30h, apply the high-purity argon gas of more than 99.9%, obtain compound after ball milling;
The mixed powder of above-mentioned acquisition is dry, screening, press forming; Then carry out vacuum sintering, carry out when temperature rise rate 35 DEG C/min is warming up to 1190 DEG C insulation 1 hour, after be cooled to 1150 DEG C, rate of temperature fall 15 DEG C/h, be incubated 3 hours, after be again cooled to 1130 DEG C, rate of temperature fall 20 DEG C/h, being incubated 2 hours, rear sky is chilled to room temperature
Afterwards blank is annealed, annealing temperature 640 DEG C, insulation 2h, after be warming up to 680 DEG C, temperature rise rate 12 DEG C/h, be incubated 4 hours, after be warming up to 740 DEG C, temperature rise rate 25 DEG C/h, be incubated 5 hours, furnace cooling; Carry out machining,
Blank carrying out oil afterwards quench process, the temperature of quench treatment is 970 DEG C, carries out temper afterwards:: from room temperature, workpiece being heated to 530 DEG C, temperature rise rate 50 DEG C/h, be incubated 4 hours, rear sky is chilled to room temperature,
Carrying out nitriding operation afterwards: temperature 850 DEG C of nitrogen gesture 0.5%, insulation 2h, then raise nitrogen gesture to 0.9%, insulation 3h, furnace temperature is down to 700 DEG C afterwards, and nitrogen potential control is 1.1%;Insulation 2h, sky is chilled to room temperature afterwards;
Carry out plasma boronising afterwards, adopt boron fluoride+boron chloride gas as boron source, high-voltage electric field makes its boron ionization thus carries out boronising, first initial temperature is 630 DEG C, the throughput ratio (volume ratio) of boron fluoride and boron chloride is 3:2, it is incubated 2 hours, it is cooled to 570 DEG C afterwards, the throughput ratio (volume ratio) of adjustment boron fluoride and boron chloride, to 2:5, is incubated 1 hour, is cooled to 530 DEG C afterwards, the throughput ratio of adjustment boron fluoride and boron chloride is to 1:1, it is incubated 3 hours, naturally cooling, obtains power cable card hoop.
Embodiment 2
A kind of power cable card hoop, it is characterised in that, the raw material powder manufacturing power cable card hoop by (molePart); Iron powder 130 parts, 6 parts, Cu powder, 4 parts, Zn powder, 2 parts, silicon carbide, 2 parts, Mn powder, TiB2 0.9 part, 0.7 part, Cr powder, chromium carbide 0.5 part, 0.5 part, V powder, yttrium oxide 0.3 part, cerium oxide 0.2 part composition,
First iron powder is taken according to aforementioned proportion, Cu powder, Zn powder, silicon carbide, Mn powder, TiB2, Cr powder, chromium carbide, V powder, yttrium oxide, cerium oxide raw material powder also mixes, and carries out ball-milling processing according to ratio of grinding media to material 15:1, ball milling time 30h, apply the high-purity argon gas of more than 99.9%, obtain compound after ball milling;
The mixed powder of above-mentioned acquisition is dry, screening, press forming; Then carry out vacuum sintering, carry out when temperature rise rate 35 DEG C/min is warming up to 1190 DEG C insulation 1 hour, after be cooled to 1150 DEG C, rate of temperature fall 15 DEG C/h, be incubated 3 hours, after be again cooled to 1130 DEG C, rate of temperature fall 20 DEG C/h, being incubated 2 hours, rear sky is chilled to room temperature
Afterwards blank is annealed, annealing temperature 640 DEG C, insulation 3h, after be warming up to 680 DEG C, temperature rise rate 12 DEG C/h, be incubated 4 hours, after be warming up to 740 DEG C, temperature rise rate 25 DEG C/h, be incubated 5 hours, furnace cooling; Carry out machining,
Blank carrying out oil afterwards quench process, the temperature of quench treatment is 980 DEG C, carries out temper afterwards:: from room temperature, workpiece being heated to 530 DEG C, temperature rise rate 50 DEG C/h, be incubated 4 hours, rear sky is chilled to room temperature,
Carrying out nitriding operation afterwards: temperature 860 DEG C of nitrogen gesture 0.5%, insulation 2h, then raise nitrogen gesture to 0.9%, insulation 3h, furnace temperature is down to 710 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards;
Carry out plasma boronising afterwards, adopt boron fluoride+boron chloride gas as boron source, high-voltage electric field makes its boron ionization thus carries out boronising, first initial temperature is 630 DEG C, the throughput ratio (volume ratio) of boron fluoride and boron chloride is 3:2, it is incubated 2 hours, it is cooled to 570 DEG C afterwards, the throughput ratio (volume ratio) of adjustment boron fluoride and boron chloride, to 2:5, is incubated 1 hour, is cooled to 530 DEG C afterwards, the throughput ratio of adjustment boron fluoride and boron chloride is to 1:1, it is incubated 3 hours, naturally cooling, obtains power cable card hoop.
Embodiment 3
A kind of power cable card hoop, it is characterised in that, the raw material powder manufacturing power cable card hoop by (molePart); Iron powder 125 parts, 5.5 parts, Cu powder, 3.5 parts, Zn powder, 1.5 parts, silicon carbide, 1.5 parts, Mn powder, TiB2 0.85 part, 0.65 part, Cr powder, chromium carbide 0.45 part, 0.45 part, V powder, yttrium oxide 0.25 part, cerium oxide 0.15 part composition,
First iron powder is taken according to aforementioned proportion, Cu powder, Zn powder, silicon carbide, Mn powder, TiB2, Cr powder, chromium carbide, V powder, yttrium oxide, cerium oxide raw material powder also mixes, and carries out ball-milling processing according to ratio of grinding media to material 15:1, ball milling time 30h, apply the high-purity argon gas of more than 99.9%, obtain compound after ball milling;
The mixed powder of above-mentioned acquisition is dry, screening, press forming; Then carry out vacuum sintering, carry out when temperature rise rate 35 DEG C/min is warming up to 1190 DEG C insulation 1 hour, after be cooled to 1150 DEG C, rate of temperature fall 15 DEG C/h, be incubated 3 hours, after be again cooled to 1130 DEG C, rate of temperature fall 20 DEG C/h, being incubated 2 hours, rear sky is chilled to room temperature
Afterwards blank is annealed, annealing temperature 640 DEG C, insulation 2.5h, after be warming up to 680 DEG C, temperature rise rate 12 DEG C/h, be incubated 4 hours, after be warming up to 740 DEG C, temperature rise rate 25 DEG C/h, be incubated 5 hours, furnace cooling; Carry out machining,
Blank carrying out oil afterwards quench process, the temperature of quench treatment is 975 DEG C, carries out temper afterwards:: from room temperature, workpiece being heated to 530 DEG C, temperature rise rate 50 DEG C/h, be incubated 4 hours, rear sky is chilled to room temperature,
Carrying out nitriding operation afterwards: temperature 855 DEG C of nitrogen gesture 0.5%, insulation 2h, then raise nitrogen gesture to 0.9%, insulation 3h, furnace temperature is down to 705 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards;
Carry out plasma boronising afterwards, adopt boron fluoride+boron chloride gas as boron source, high-voltage electric field makes its boron ionization thus carries out boronising, first initial temperature is 630 DEG C, the throughput ratio (volume ratio) of boron fluoride and boron chloride is 3:2, it is incubated 2 hours, it is cooled to 570 DEG C afterwards, the throughput ratio (volume ratio) of adjustment boron fluoride and boron chloride, to 2:5, is incubated 1 hour, is cooled to 530 DEG C afterwards, the throughput ratio of adjustment boron fluoride and boron chloride is to 1:1, it is incubated 3 hours, naturally cooling, obtains power cable card hoop.
Embodiment 4
A kind of power cable card hoop, it is characterised in that, the raw material powder manufacturing power cable card hoop by (molePart); Iron powder 122 parts, 5.1 parts, Cu powder, 3.1 parts, Zn powder, 1.4 parts, silicon carbide, 1.3 parts, Mn powder, TiB2 0.82 part, 0.63 part, Cr powder, chromium carbide 0.44 part, 0.44 part, V powder, yttrium oxide 0.23 part, cerium oxide 0.12 part composition,
First iron powder is taken according to aforementioned proportion, Cu powder, Zn powder, silicon carbide, Mn powder, TiB2, Cr powder, chromium carbide, V powder, yttrium oxide, cerium oxide raw material powder also mixes, and carries out ball-milling processing according to ratio of grinding media to material 15:1, ball milling time 30h, apply the high-purity argon gas of more than 99.9%, obtain compound after ball milling;
The mixed powder of above-mentioned acquisition is dry, screening, press forming; Then carry out vacuum sintering, carry out when temperature rise rate 35 DEG C/min is warming up to 1190 DEG C insulation 1 hour, after be cooled to 1150 DEG C, rate of temperature fall 15 DEG C/h, be incubated 3 hours, after be again cooled to 1130 DEG C, rate of temperature fall 20 DEG C/h, being incubated 2 hours, rear sky is chilled to room temperature
Afterwards blank is annealed, annealing temperature 640 DEG C, insulation 2.3h, after be warming up to 680 DEG C, temperature rise rate 12 DEG C/h, be incubated 4 hours, after be warming up to 740 DEG C, temperature rise rate 25 DEG C/h, be incubated 5 hours, furnace cooling; Carry out machining,
Blank carrying out oil afterwards quench process, the temperature of quench treatment is 972 DEG C, carries out temper afterwards:: from room temperature, workpiece being heated to 530 DEG C, temperature rise rate 50 DEG C/h, be incubated 4 hours, rear sky is chilled to room temperature,
Carrying out nitriding operation afterwards: temperature 852 DEG C of nitrogen gesture 0.5%, insulation 2h, then raise nitrogen gesture to 0.9%, insulation 3h, furnace temperature is down to 701 DEG C afterwards, and nitrogen potential control is 1.1%;Insulation 2h, sky is chilled to room temperature afterwards;
Carry out plasma boronising afterwards, adopt boron fluoride+boron chloride gas as boron source, high-voltage electric field makes its boron ionization thus carries out boronising, first initial temperature is 630 DEG C, the throughput ratio (volume ratio) of boron fluoride and boron chloride is 3:2, it is incubated 2 hours, it is cooled to 570 DEG C afterwards, the throughput ratio (volume ratio) of adjustment boron fluoride and boron chloride, to 2:5, is incubated 1 hour, is cooled to 530 DEG C afterwards, the throughput ratio of adjustment boron fluoride and boron chloride is to 1:1, it is incubated 3 hours, naturally cooling, obtains power cable card hoop.
Embodiment 5
A kind of power cable card hoop, it is characterised in that, the raw material powder manufacturing power cable card hoop by (molePart); Iron powder 128 parts, 5.7 parts, Cu powder, 3.6 parts, Zn powder, 1.7 parts, silicon carbide, 1.7 parts, Mn powder, TiB2 0.86 part, 0.67 part, Cr powder, chromium carbide 0.48 part, 0.49 part, V powder, yttrium oxide 0.28 part, cerium oxide 0.17 part composition,
First iron powder is taken according to aforementioned proportion, Cu powder, Zn powder, silicon carbide, Mn powder, TiB2, Cr powder, chromium carbide, V powder, yttrium oxide, cerium oxide raw material powder also mixes, and carries out ball-milling processing according to ratio of grinding media to material 15:1, ball milling time 30h, apply the high-purity argon gas of more than 99.9%, obtain compound after ball milling;
The mixed powder of above-mentioned acquisition is dry, screening, press forming; Then carry out vacuum sintering, carry out when temperature rise rate 35 DEG C/min is warming up to 1190 DEG C insulation 1 hour, after be cooled to 1150 DEG C, rate of temperature fall 15 DEG C/h, be incubated 3 hours, after be again cooled to 1130 DEG C, rate of temperature fall 20 DEG C/h, being incubated 2 hours, rear sky is chilled to room temperature
Afterwards blank is annealed, annealing temperature 640 DEG C, insulation 2.8h, after be warming up to 680 DEG C, temperature rise rate 12 DEG C/h, be incubated 4 hours, after be warming up to 740 DEG C, temperature rise rate 25 DEG C/h, be incubated 5 hours, furnace cooling; Carry out machining,
Blank carrying out oil afterwards quench process, the temperature of quench treatment is 976 DEG C, carries out temper afterwards:: from room temperature, workpiece being heated to 530 DEG C, temperature rise rate 50 DEG C/h, be incubated 4 hours, rear sky is chilled to room temperature,
Carrying out nitriding operation afterwards: temperature 858 DEG C of nitrogen gesture 0.5%, insulation 2h, then raise nitrogen gesture to 0.9%, insulation 3h, furnace temperature is down to 706 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards;
Carry out plasma boronising afterwards, adopt boron fluoride+boron chloride gas as boron source, high-voltage electric field makes its boron ionization thus carries out boronising, first initial temperature is 630 DEG C, the throughput ratio (volume ratio) of boron fluoride and boron chloride is 3:2, it is incubated 2 hours, it is cooled to 570 DEG C afterwards, the throughput ratio (volume ratio) of adjustment boron fluoride and boron chloride, to 2:5, is incubated 1 hour, is cooled to 530 DEG C afterwards, the throughput ratio of adjustment boron fluoride and boron chloride is to 1:1, it is incubated 3 hours, naturally cooling, obtains power cable card hoop.
Claims (10)
1. a power cable card hoop, it is characterised in that, manufacture power cable card hoop raw material powder by (molePart); Iron powder 120-130 part, Cu powder 5-6 part, Zn powder 3-4 part, silicon carbide 1-2 part, Mn powder 1-2 part, TiB2 0.8-0.9 part, Cr powder 0.6-0.7 part, chromium carbide 0.4-0.5 part, V powder 0.4-0.5 part, yttrium oxide 0.2-0.3 part, cerium oxide 0.1-0.2 part forms,
First iron powder is taken according to aforementioned proportion, Cu powder, Zn powder, silicon carbide, Mn powder, TiB2, Cr powder, chromium carbide, V powder, yttrium oxide, cerium oxide raw material powder also mixes, and carries out ball-milling processing according to ratio of grinding media to material 15:1, ball milling time 30h, apply the high-purity argon gas of more than 99.9%, obtain compound after ball milling;
The mixed powder of above-mentioned acquisition is dry, screening, press forming; Then carry out vacuum sintering, carry out when temperature rise rate 35 DEG C/min is warming up to 1190 DEG C insulation 1 hour, after be cooled to 1150 DEG C, rate of temperature fall 15 DEG C/h, be incubated 3 hours, after be again cooled to 1130 DEG C, rate of temperature fall 20 DEG C/h, being incubated 2 hours, rear sky is chilled to room temperature
Afterwards blank is annealed, annealing temperature 640 DEG C, insulation 2-3h, after be warming up to 680 DEG C, temperature rise rate 12 DEG C/h, be incubated 4 hours, after be warming up to 740 DEG C, temperature rise rate 25 DEG C/h, be incubated 5 hours, furnace cooling; Carry out machining,
Blank carrying out oil afterwards quench process, the temperature of quench treatment is 970-980 DEG C, carries out temper afterwards: from room temperature, workpiece is heated to 530 DEG C, temperature rise rate 50 DEG C/h, is incubated 4 hours, and rear sky is chilled to room temperature,
Carrying out nitriding operation afterwards: temperature 850-860 DEG C of nitrogen gesture 0.5%, insulation 2h, then raise nitrogen gesture to 0.9%, insulation 3h, furnace temperature is down to 700-710 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards;
Carry out plasma boronising afterwards, adopt boron fluoride+boron chloride gas as boron source, high-voltage electric field makes its boron ionization thus carries out boronising, first initial temperature is 630 DEG C, the throughput ratio (volume ratio) of boron fluoride and boron chloride is 3:2, it is incubated 2 hours, it is cooled to 570 DEG C afterwards, the throughput ratio (volume ratio) of adjustment boron fluoride and boron chloride, to 2:5, is incubated 1 hour, is cooled to 530 DEG C afterwards, the throughput ratio of adjustment boron fluoride and boron chloride is to 1:1, it is incubated 3 hours, naturally cooling, obtains power cable card hoop.
2. a kind of power cable card hoop as claimed in claim 1, nitriding operation: temperature 850 DEG C of nitrogen gesture 0.5%, insulation 2h, then raises nitrogen gesture to 0.9%, insulation 3h, and furnace temperature is down to 700 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards.
3. a kind of power cable card hoop as claimed in claim 1, nitriding operation: temperature 860 DEG C of nitrogen gesture 0.5%, insulation 2h, then raises nitrogen gesture to 0.9%, insulation 3h, and furnace temperature is down to 710 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards.
4. a kind of power cable card hoop as claimed in claim 1, nitriding operation: temperature 855 DEG C of nitrogen gesture 0.5%, insulation 2h, then raises nitrogen gesture to 0.9%, insulation 3h, and furnace temperature is down to 705 DEG C afterwards, and nitrogen potential control is 1.1%; Insulation 2h, sky is chilled to room temperature afterwards.
5. power cable card hoop as claimed in claim 1 a kind of, the raw material powder manufacturing power cable card hoop by (molePart); Iron powder 120 parts, 5 parts, Cu powder, 3 parts, Zn powder, 1 part, silicon carbide, 1 part, Mn powder, TiB2 0.8 part, 0.6 part, Cr powder, chromium carbide 0.4 part, 0.4 part, V powder, yttrium oxide 0.2 part, cerium oxide 0.1 part composition.
6. power cable card hoop as claimed in claim 1 a kind of, the raw material powder manufacturing power cable card hoop by (molePart); Iron powder 130 parts, 6 parts, Cu powder, 4 parts, Zn powder, 2 parts, silicon carbide, 2 parts, Mn powder, TiB2 0.9 part, 0.7 part, Cr powder, chromium carbide 0.5 part, 0.5 part, V powder, yttrium oxide 0.3 part, cerium oxide 0.2 part composition.
7. power cable card hoop as claimed in claim 1 a kind of, the raw material powder manufacturing power cable card hoop by (molePart); Iron powder 125 parts, 5.5 parts, Cu powder, 3.5 parts, Zn powder, 1.5 parts, silicon carbide, 1.5 parts, Mn powder, TiB2 0.85 part, 0.65 part, Cr powder, chromium carbide 0.45 part, 0.45 part, V powder, yttrium oxide 0.25 part, cerium oxide 0.15 part composition.
8. a kind of power cable card hoop as described in claim 1-7, the temperature of quench treatment is 970 DEG C.
9. a kind of power cable card hoop as claimed in claim 1, the temperature of quench treatment is 980 DEG C.
10. a kind of power cable card hoop as claimed in claim 1, the temperature of quench treatment is 975 DEG C.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101641456A (en) * | 2007-03-22 | 2010-02-03 | 杰富意钢铁株式会社 | High-strength hot dip zinc plated steel sheet having excellent moldability, and method for production thereof |
| CN101912888A (en) * | 2010-07-15 | 2010-12-15 | 江阴东大新材料研究院 | Manufacturing method of die core of wire-drawing die |
| US20140235513A1 (en) * | 2013-02-19 | 2014-08-21 | Nanotech Industrial Solutions, Inc. | Coating including inorganic fullerene-like particles and inorganic tubular-like particles |
| CN105014077A (en) * | 2014-04-17 | 2015-11-04 | 东睦新材料集团股份有限公司 | Preparation method of powder metallurgical gear and chain wheel |
| CN105018824A (en) * | 2014-04-17 | 2015-11-04 | 东睦新材料集团股份有限公司 | Manufacturing method of powder metallurgy cam |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101641456A (en) * | 2007-03-22 | 2010-02-03 | 杰富意钢铁株式会社 | High-strength hot dip zinc plated steel sheet having excellent moldability, and method for production thereof |
| CN101912888A (en) * | 2010-07-15 | 2010-12-15 | 江阴东大新材料研究院 | Manufacturing method of die core of wire-drawing die |
| US20140235513A1 (en) * | 2013-02-19 | 2014-08-21 | Nanotech Industrial Solutions, Inc. | Coating including inorganic fullerene-like particles and inorganic tubular-like particles |
| CN105014077A (en) * | 2014-04-17 | 2015-11-04 | 东睦新材料集团股份有限公司 | Preparation method of powder metallurgical gear and chain wheel |
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