CN105632981A - Instrument for reducing surface roughness of microelectronic device by utilizing heat treatment - Google Patents
Instrument for reducing surface roughness of microelectronic device by utilizing heat treatment Download PDFInfo
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- CN105632981A CN105632981A CN201610163375.9A CN201610163375A CN105632981A CN 105632981 A CN105632981 A CN 105632981A CN 201610163375 A CN201610163375 A CN 201610163375A CN 105632981 A CN105632981 A CN 105632981A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention belongs to the technical field of surface treatment of microelectronic devices and particularly relates to an instrument for reducing the surface roughness of a microelectronic device by utilizing heat treatment. The instrument comprises two core parts: a high-power heat source and a constant-temperature platform. The high-power heat source quickly increases the surface temperature of a sample, and the temperature of the other side of the sample is controlled to be the room temperature by the constant-temperature platform; due to a silicon wafer with extremely high thermal conductivity at a sample substrate, the temperature gradient is mainly focused in photoresist of a few hundred nanometers to a few microns, so that a very large temperature gradient is formed; and the temperature of only a very thin surface layer of the sample is enabled to exceed glass transition temperature, and melting and backflow phenomena occur to the thin surface layer, so that the roughness is reduced and the morphology of the whole sample is not changed. The instrument is simple, convenient, effective, high in compatibility and wide in application range, and has a very good effect for nearly all materials capable of being molten at a specific temperature.
Description
Technical field
The invention belongs to microelectronic device surface processing technology field, it is specifically related to a kind of instrument utilizing thermal treatment to reduce microelectronic device surface roughness.
Background technology
Along with developing rapidly of microelectronic, surfaceness, line roughness is becoming one of principal element of limitation device performance gradually.
The method of traditional reduction surface, line roughness has two kinds: (1) is from developing solution, or developing formula sets about, and this kind of method can only be effective for the specific photoresist material of a certain kind, it may also be useful to face is narrower, and the effect that roughness reduces not is very remarkable; (2) from substrate heating, make surface thawing, backflow, reduce roughness. Overall shape looks are had serious destructiveness by this kind of method, are not reliable.
Summary of the invention
For the problems referred to above, it is an object of the invention to provide that a kind of compatibility is good, system is simple, efficient, fast, the wide thermal treatment that utilizes in low cost, use face reduce the instrument of microelectronic device surface roughness.
The instrument utilizing thermal treatment to reduce microelectronic device surface roughness provided by the invention, shown in concrete structure iron 1, it comprises:
(1) strong thermal source;
(2) temperature platform;
(3) adjustable track;
Other auxiliary parts are casing, and microelectronics device sample stationary platen, microelectronics device sample passes in and out passage etc. fast.
Described adjustable track is for supporting strong thermal source, and regulates strong heat source position; Described temperature platform is below strong thermal source.
Described strong thermal source, for being warming up to more than sample glass temperature by the photoresist material of microelectronics device sample surfaces in very short time (generally within one minute, such as 15 seconds-1 minute).
Described temperature platform, in order to guarantee while sample surfaces photoresist material reaches second-order transition temperature, makes the temperature of sample entirety still remain on lower level, thus realizes reducing surfaceness while overall shape looks do not change.
In the present invention, described strong thermal source can adopt resistance wire furnace (2000-3000W), high hot bulb (250-350W), laser apparatus (250-1000mW) etc., and the sample size being suitable for diminishes successively. Consider concentrating and controllability of energy, it is preferred to use laser apparatus.
In the present invention, described temperature platform can use constant temperature cooling fin, such as semi-conductor cooling piece, arranges a fixed temperature, starts higher than this temperature refrigeration sheet, then can guarantee that the sample back side is all the time lower than set temperature.
The operation steps of instrument of the present invention is as follows:
(1) strong thermal source (such as laser apparatus), temperature platform power supply is opened;
(2) temperature platform fixed temperature is set;
(3) microelectronics device sample is placed on temperature platform;
(4) strong thermal source is adjusted to low power state ((if laser apparatus is 0-50mW), alignment sample drawing shaped position, closedown laser apparatus;
(5) strong thermal source is adjusted to high power state ((if laser apparatus is 250-1000mW), open after 10-60s and close laser apparatus;
(6) cooling is by irradiation surface, takes out sample.
In the present invention, superpower thermal source can promote rapidly sample surface temperature, another side is controlled in room temperature by temperature platform, due to the silicon chip that sample substrate position thermal conductivity is extremely high, thermograde mainly concentrates in the photoresist material of several hundred nanometers to several microns, thus forms a very big thermograde, one layer that makes only sample surfaces very thin exceedes second-order transition temperature, this part is melted, backflow phenomenon, reduces roughness, and the overall shape looks of sample then do not change. This instrument is easy, effectively, compatible good, relevance grade is wide, nearly all material of melting can have good effect at a certain specified temp.
This instrument has the following advantages:
(1) applied widely. After carrying out several preliminary tests, nearly all photoresist material there is significant effect;
(2) efficiency height, repeatability good. The process that roughness reduces is within 1 minute, and can repeatedly test, and continues to reduce efficiently roughness;
(3) with low cost, can big area realize. What need is only an enough strong extensive thermal source and the back-cooled platform being suitable for, and principle experimentally can realize large-scale roughness and reduce operation;
(4) compatible good. Can be well compatible with existing all microelectronic technique steps, it is possible to realize industrialization.
Accompanying drawing explanation
Fig. 1 is instrument one-piece construction figure of the present invention.
Fig. 2 is thermal backflow handling principle figure. Sample substrate is the silicon chip that thermal conductivity is extremely high, thermograde mainly concentrates in the photoresist material of several hundred nanometers to several microns, thus form a very big thermograde, one layer that makes only sample surfaces very thin exceedes second-order transition temperature, this part is melted, backflow phenomenon, reducing roughness, the overall shape looks of sample then do not change.
Fig. 3 is the roughness that in embodiment 1, sample atomic force microscope (AFM) characterizes overall shape looks and each layer.
Fig. 4 is the overall shape looks that characterize by atomic force microscope (AFM) of sample through the inventive method process and each bed roughness.
Fig. 5 is the roughness that the sample processed through the inventive method is characterized by atomic force microscope (AFM). Wherein, it is respectively the roughness of different layers from left to right, it is the roughness shape looks after repeatedly thermal backflow processes under upper.
Number in the figure: 1 is strong thermal source (such as laser apparatus), and 2 is casing, 3 is temperature platform (such as semi-conductor cooling fin), and 4 is adjustable track (upper and lower all around), and 5 is sample fixed plate, and 6 is sample turnover passage.
Embodiment
1. utilizing three-dimensional electronic book photoetching technique to make a ledge structure sample, structure size is 100 ��m2, characterize the roughness of overall shape looks and each layer by atomic force microscope (AFM), as shown in Figure 3;
2. sample is placed on temperature platform (semi-conductor cooling fin) surface, and fixing, chill station temperature is arranged on 23 DEG C;
3. power is adjusted to 50mW, opens laser apparatus, utilizes adjustable track to be adjusted to figure place, closes laser apparatus;
4. power is adjusted to 250mW, opens laser apparatus, and direct projection 30s, takes off sample, cools rapidly irradiation surface;
5. repeat 2-4 step 4 time;
6. again utilize atomic force microscope (AFM) to characterize overall shape looks and each bed roughness, as shown in Figure 4. In Fig. 5, it is respectively the roughness of different layers from left to right, it is the roughness shape looks after repeatedly thermal backflow processes under upper, it is possible to obviously see the reduction of roughness.
Claims (4)
1. one kind utilizes the instrument of thermal treatment reduction microelectronic device surface roughness, it is characterised in that, comprising:
(1) strong thermal source;
(2) temperature platform;
(3) adjustable track;
Described adjustable track is for supporting strong thermal source, and regulates strong heat source position; Temperature platform is below strong thermal source;
Described strong thermal source, for being warming up to more than sample glass temperature by the photoresist material of microelectronic device sample surfaces in very short time;
Described temperature platform, in order to guarantee while sample surfaces photoresist material reaches second-order transition temperature, makes the temperature of sample entirety still remain on lower level, thus realizes reducing surfaceness while overall shape looks do not change.
2. instrument according to claim 1, it is characterised in that, described strong thermal source employing power is the laser apparatus of the resistance wire furnace of 2000-3000W, the high hot bulb of 250-350W or 250-1000mW, and applicable sample size diminishes successively.
3. instrument according to claim 1, it is characterised in that, described temperature platform uses constant temperature cooling fin, arranges a fixed temperature, starts higher than this temperature refrigeration sheet, to guarantee that the sample back side is all the time lower than set temperature.
4. instrument according to claim 3, it is characterised in that, described constant temperature cooling fin is semi-conductor cooling piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610163375.9A CN105632981A (en) | 2016-03-19 | 2016-03-19 | Instrument for reducing surface roughness of microelectronic device by utilizing heat treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610163375.9A CN105632981A (en) | 2016-03-19 | 2016-03-19 | Instrument for reducing surface roughness of microelectronic device by utilizing heat treatment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105632981A true CN105632981A (en) | 2016-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610163375.9A Pending CN105632981A (en) | 2016-03-19 | 2016-03-19 | Instrument for reducing surface roughness of microelectronic device by utilizing heat treatment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111090222A (en) * | 2020-02-24 | 2020-05-01 | 昆山弗莱吉电子科技有限公司 | Efficient preparation method of VCM elastic sheet |
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| CN101976019A (en) * | 2010-11-12 | 2011-02-16 | 复旦大学 | Nano-size photoetching method and photoetching equipment for special-shaped surface |
| CN103155090A (en) * | 2010-10-01 | 2013-06-12 | 瓦里安半导体设备公司 | Method and system for modifying patterned photoresist using multi-step ion implantion |
| CN103809236A (en) * | 2014-03-12 | 2014-05-21 | 中国电子科技集团公司第三十八研究所 | Manufacture method for high precision mesh point light guide plate based on MEMS (micro electro mechanical systems) |
| CN104246992A (en) * | 2012-04-05 | 2014-12-24 | 朗姆研究公司 | Method and apparatus for forming features with plasma pre-etch treatment on photoresist |
| CN104483812A (en) * | 2014-11-29 | 2015-04-01 | 复旦大学 | Method for preparing high-density flat pattern by using thermal development enhanced electron beam photoresist contrast ratio |
| US20150228497A1 (en) * | 2014-02-07 | 2015-08-13 | Katholieke Universiteit Leuven, KU LEUVEN R&D | Plasma Method for Reducing Post-Lithography Line Width Roughness |
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2016
- 2016-03-19 CN CN201610163375.9A patent/CN105632981A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06124914A (en) * | 1992-10-14 | 1994-05-06 | Kawasaki Steel Corp | Manufacture of semiconductor |
| JP2001332484A (en) * | 2000-05-24 | 2001-11-30 | Toshiba Corp | Pattern treatment method |
| CN1417843A (en) * | 2001-10-31 | 2003-05-14 | 松下电器产业株式会社 | Pottern forming method |
| JP3963846B2 (en) * | 2003-01-30 | 2007-08-22 | 東京エレクトロン株式会社 | Thermal processing method and thermal processing apparatus |
| US7064846B1 (en) * | 2003-08-22 | 2006-06-20 | Advanced Micro Devices, Inc. | Non-lithographic shrink techniques for improving line edge roughness and using imperfect (but simpler) BARCs |
| CN1886699A (en) * | 2003-10-17 | 2006-12-27 | 英特尔公司 | Reducing photoresist line edge roughness using chemically-assisted reflow |
| CN101144988A (en) * | 2006-09-13 | 2008-03-19 | 沈阳芯源先进半导体技术有限公司 | Temperature gradient controllable wafer front-drying method and its hot plate type front drying device |
| CN103155090A (en) * | 2010-10-01 | 2013-06-12 | 瓦里安半导体设备公司 | Method and system for modifying patterned photoresist using multi-step ion implantion |
| CN101976019A (en) * | 2010-11-12 | 2011-02-16 | 复旦大学 | Nano-size photoetching method and photoetching equipment for special-shaped surface |
| CN104246992A (en) * | 2012-04-05 | 2014-12-24 | 朗姆研究公司 | Method and apparatus for forming features with plasma pre-etch treatment on photoresist |
| US20150228497A1 (en) * | 2014-02-07 | 2015-08-13 | Katholieke Universiteit Leuven, KU LEUVEN R&D | Plasma Method for Reducing Post-Lithography Line Width Roughness |
| CN103809236A (en) * | 2014-03-12 | 2014-05-21 | 中国电子科技集团公司第三十八研究所 | Manufacture method for high precision mesh point light guide plate based on MEMS (micro electro mechanical systems) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111090222A (en) * | 2020-02-24 | 2020-05-01 | 昆山弗莱吉电子科技有限公司 | Efficient preparation method of VCM elastic sheet |
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Application publication date: 20160601 |