CN105632956A - Method and system for evaluating surface appearance of chip after chemical mechanical polishing - Google Patents

Abstract

The invention discloses a method and system for evaluating chip surface topography after chemical mechanical polishing, belonging to the technical field of integrated circuit manufacturing. The method for evaluating chip surface topography after chemical mechanical polishing includes: obtaining the surface topography parameters of the chip in the previous process stage and the selection ratio of the polishing solution; obtaining the process parameters of the current process stage and the selection ratio of the polishing solution; The current surface layout is divided into multiple continuous panes, and the layout characteristic parameters of each pane are extracted respectively; it is judged whether the selection ratio of the grinding liquid has changed, and if so, according to the surface topography parameters, process parameters, The layout feature parameters and the selection ratio of the polishing liquid in the current process stage are used to calculate the surface topography parameters of the chip in the current process stage; the surface topography of the chip is evaluated according to the surface topography parameters in the current process stage. The chip surface topography evaluation method after chemical mechanical polishing can accurately evaluate the chip surface topography.

Description

Method and system for evaluating chip surface topography after chemical mechanical polishing

technical field

The invention relates to the technical field of integrated circuit manufacturing, in particular to a method and system for evaluating chip surface topography after chemical mechanical polishing.

Background technique

In the manufacturing process of integrated circuits (Integrated Circuit, referred to as IC), metals, dielectrics and other materials are applied to the surface of silicon wafers by various methods such as physical vapor deposition and chemical vapor deposition to form a layered metal structure. . Integrated circuits usually include a multi-layer metal structure, and each layer of metal is connected with a plurality of metal-filled vias. The metal structure can connect the layers of the circuit, making the integrated circuit very complex and circuit density. Therefore, a critical step in the fabrication of integrated circuits lies in the formation of metal structures.

The flatness of the surface of the metal layer will affect the depth of focus required in lithography and the stress distribution of the interconnection structure. In order to obtain the flatness necessary for the manufacture of multilayer circuits, a chemical mechanical polishing process is usually used to planarize the morphology of the metal dielectric layer. Among them, Chemical Mechanical Polishing (CMP for short) is to form a smooth and flat surface on the surface of the ground medium by means of the chemical corrosion of the polishing liquid and the grinding of ultrafine particles. It is the best material in the VLSI stage. Flattening method.

During the chemical mechanical polishing process, due to the different removal rates of different abrasives for different materials, the change in the selective ratio of the abrasive liquid makes the chip surface not completely flat during and after CMP, but with topological fluctuations. In order to improve the chip production yield and reduce production costs, it is necessary to evaluate the surface morphology of the chip after the CMP process in advance, so as to evaluate whether the morphology will affect the subsequent photolithography process.

As shown in Figure 1, it is a flow chart of the chip surface topography evaluation method after chemical mechanical polishing in the prior art, which specifically includes the following steps:

Step 101: Obtain the surface topography parameters of the chip in the previous process stage;

Step 102: Obtain the process parameters of the current process stage;

Step 103: dividing the current surface layout of the chip into a plurality of continuous panes, and extracting the layout feature parameters of each pane respectively;

Step 104: Calculate the surface topography parameters of the chip at the current process stage according to the surface topography parameters, process parameters and layout feature parameters of the previous process stage;

Step 105: Evaluate the surface topography of the chip according to the surface topography parameters at the current process stage.

Due to the complexity of the chemical mechanical polishing process, it can be divided into multiple process stages. In different process stages, different abrasive liquids need to be selected for grinding and polishing, and different abrasive liquids have different removal rates for different materials. The selectivity ratio of the grinding liquid changes. The above evaluation method can accurately evaluate the surface topography of the chip after chemical mechanical polishing when the selection ratio of the polishing liquid remains unchanged, but when the selection ratio of the polishing liquid changes, the surface topography of the chip will The appearance changes, which makes it impossible to accurately evaluate the surface topography of the chip.

Contents of the invention

The embodiments of the present invention provide a method and system for evaluating chip surface topography after chemical mechanical polishing, which can accurately evaluate chip surface topography.

The technical scheme that the embodiment of the present invention provides is as follows:

On the one hand, a method for evaluating chip surface morphology after chemical mechanical polishing is provided, including:

Obtain the surface morphology parameters of the chip in the previous process stage and the selection ratio of the polishing solution;

Obtain the process parameters of the current process stage and the selection ratio of the grinding liquid;

dividing the current surface layout of the chip into a plurality of continuous panes, and extracting layout characteristic parameters of each pane respectively;

Judging whether the selection ratio of the grinding liquid changes, if so, according to the surface topography parameters of the previous process stage, the process parameters, the layout characteristic parameters and the selection ratio of the grinding liquid in the current process stage, calculate The surface topography parameters of the chip at the current process stage;

The surface topography of the chip is evaluated according to the surface topography parameters at the current process stage.

Preferably, according to the surface topography parameters of the previous process stage, the process parameters, the layout feature parameters and the selection ratio of the polishing liquid in the current process stage, the surface of the chip at the current process stage is calculated. Morphological parameters, including:

Calculate the pressure distribution of the chip according to the surface topography parameters of the previous process stage, the process parameters, the layout characteristic parameters and the selection ratio of the grinding liquid in the current process stage;

Calculating the removal rate of the chip according to the pressure distribution;

According to the removal rate, the surface topography parameters of the current process stage are calculated.

Preferably, the method further includes: judging whether the current process stage has reached the grinding end point, and if so, ending the surface topography evaluation.

Preferably, if the current process stage has not reached the grinding end point, the distribution of high and low areas on the chip surface is calculated according to the surface topography parameters of the current process stage.

Preferably, the method also includes:

Judging whether the distribution of high and low areas on the chip surface in the previous process stage and the current process stage has changed;

If so, exchange the relatively high area and the relatively low area in the distribution of the high and low areas.

On the other hand, a chip surface morphology evaluation system after chemical mechanical polishing is provided, including:

The first acquisition module is used to acquire the surface topography parameters of the chip in the previous process stage and the selection ratio of the polishing liquid;

The second acquisition module is used to acquire the process parameters of the current process stage and the selection ratio of the grinding liquid;

a layout division module, configured to divide the current surface layout of the chip into a plurality of continuous panes;

A feature extraction module, configured to extract the layout feature parameters of each pane respectively;

The first judging module is used to judge whether the selection ratio of the grinding liquid changes;

The calculation module is used to calculate the current selection ratio of the chip according to the surface topography parameters, process parameters, layout characteristic parameters and the selection ratio of the current process stage grinding liquid after the first judgment module judges that the selection ratio has changed. Surface topography parameters at the process stage;

An evaluation module, configured to evaluate the surface topography of the chip according to the surface topography parameters at the current process stage.

Preferably, the calculation module includes:

The first calculation unit is used to calculate the pressure distribution of the chip according to the surface topography parameters of the previous process stage, the process parameters, the layout characteristic parameters and the selection ratio of the grinding liquid in the current process stage;

A second calculation unit, used to calculate the chip removal rate according to the pressure distribution;

The third calculation unit is used to calculate the surface topography parameter of the current process stage according to the removal rate.

Preferably, the system also includes:

The second judging module is used to judge whether the current process stage has reached the grinding end point;

The evaluation module is further configured to end the surface topography evaluation after the second judging module judges that the current process stage has reached the grinding end point.

Preferably, the calculation module is further configured to calculate the distribution of high and low areas on the chip surface according to the surface topography parameters after the second judging module judges that the current process stage has not reached the grinding end point.

Preferably, the system also includes:

The third judging module is used to judge whether the distribution of high and low areas on the chip surface in the previous process stage and the current process stage has changed;

The exchange module is used to exchange the relatively high area and the relatively low area in the distribution of the high and low areas after the third judging module judges that the distribution of the high and low areas on the chip surface in the previous process stage and the current process stage has changed. Make an exchange.

In the method and system for evaluating chip surface topography after chemical mechanical polishing provided in the embodiments of the present invention, when the polishing liquid selection ratio of the previous process stage and the current process stage changes, according to the surface topography parameters of the previous process stage, Process parameters, layout characteristic parameters and the selection ratio of the grinding liquid in the current process stage, calculate the surface topography parameters of the chip in the current process stage, and then perform surface topography evaluation, fully consider the influence of the polishing liquid selection ratio on the surface topography of the chip, can Accurate evaluation of chip surface topography.

Description of drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the embodiments. Obviously, the accompanying drawings in the following description are only described in the present invention. For some embodiments of the present invention, those skilled in the art can also obtain other drawings according to these drawings.

Fig. 1 is the flow chart of the method for evaluating chip surface topography after chemical mechanical polishing in the prior art;

Fig. 2 is a flow chart of a method for evaluating chip surface topography after chemical mechanical polishing provided by an embodiment of the present invention;

Fig. 3 is a flow chart of the second method for evaluating chip surface topography after chemical mechanical polishing provided by an embodiment of the present invention;

4 is a flow chart of the third method for evaluating chip surface topography after chemical mechanical polishing provided by an embodiment of the present invention;

5 is a flow chart of the fourth method for evaluating chip surface topography after chemical mechanical polishing provided by an embodiment of the present invention;

6 is a schematic structural diagram of a chip surface topography evaluation system after chemical mechanical polishing provided by an embodiment of the present invention;

Fig. 7 is a schematic structural diagram of a second chip surface topography evaluation system after chemical mechanical polishing provided by an embodiment of the present invention;

Fig. 8 is a schematic structural diagram of a third chip surface topography evaluation system after chemical mechanical polishing provided by an embodiment of the present invention;

FIG. 9 is a schematic structural diagram of a fourth chip surface topography evaluation system after chemical mechanical polishing provided by an embodiment of the present invention.

detailed description

In order to enable those skilled in the art to better understand the solutions of the embodiments of the present invention, the embodiments of the present invention will be further described in detail below in conjunction with the drawings and implementations.

An embodiment of the present invention provides a method for evaluating chip surface morphology after chemical mechanical polishing, as shown in FIG. 2 , comprising the following steps:

Step 201: Obtain the surface topography parameters of the chip in the previous process stage and the selection ratio of the polishing solution.

The chemical mechanical polishing process is essentially a process of grinding and removing the material on the surface of the chip under certain process conditions through the selected polishing liquid. Among them, the selection ratio of the grinding liquid is a key parameter, and the selection ratio of the grinding liquid to material A and material B is the ratio of the removal rate of material A to material B under the same process conditions. If the selection ratio is greater than 1, the chip surface material A is concave after the CMP process, while the material B is convex; on the contrary, if the selection ratio is less than 1, the chip surface material A is convex after the CMP process, while the material B is convex. Material B is depressed. In the modern CMP process, different polishing liquids with different selection ratios are often used in different process stages to achieve the required process goals.

Step 202: Obtain the process parameters of the current process stage and the selection ratio of the grinding liquid.

The CMP process is relatively complicated, and is usually divided into multiple stages such as P1, P2, and P3, wherein the output of the previous process stage is used as the input of the next process stage. At each stage, depending on the materials to be removed, different consumables such as grinding pads and grinding liquids may be used, and different process parameters such as pressure and rotational speed may be used at the same time to achieve different process goals.

Step 203: Divide the current surface layout of the chip into a plurality of continuous panes, and extract the layout feature parameters of each pane respectively.

Among them, the layout feature parameters are relevant parameters characterizing the chip surface layout structure, which may include equivalent line width, equivalent spacing and density, etc., which layout feature parameters need to be extracted can be selected according to actual needs. The aforementioned steps 201, 202, and 203 are not limited to the aforementioned execution order, and the specific execution order can be adjusted arbitrarily as needed, and is not specifically limited in this embodiment of the present invention.

Step 204: Determine whether the selection ratio of the polishing liquid has changed, and if so, calculate the chip's current processing stage according to the surface topography parameters, process parameters, layout feature parameters and the selection ratio of the polishing liquid in the current process stage in the previous process stage. surface topography parameters.

Wherein, the selection ratio of the grinding liquid changes can include: the selection ratio of the grinding liquid in the previous process stage is greater than 1 and the selection ratio of the grinding liquid in this process stage is less than 1, and the selection ratio of the grinding liquid in the previous process stage is less than 1 and the selection ratio of the grinding liquid in this process stage is greater than 1, that is, the selection ratio of the grinding liquid in two adjacent process stages is not all greater than 1 or less than 1, it is considered that the selection ratio of the grinding liquid occurs Variety.

When the selection ratio of the polishing liquid changes, it will have an impact on the surface morphology of the chip. Therefore, in the process of calculating the surface topography parameters of the current process stage, the selection ratio of the polishing liquid needs to be taken as an input factor. consider. Wherein, the specific method for calculating the surface topography parameter can adopt the method in the prior art, which is easily known by those skilled in the art, and will not be repeated here.

Step 205: Evaluate the surface topography of the chip according to the surface topography parameters at the current process stage.

The surface topography of the chip after chemical mechanical polishing can be characterized by surface topography parameters, and the characteristic parameters often used to describe the surface topography include metal dishing and dielectric erosion. Among them, the metal dish is usually defined as the difference between the thickness of the dielectric layer in the patterned area and the thickness of the metal; and the dielectric erosion is usually defined as the difference between the thickness of the dielectric layer in the non-patterned area and the thickness of the dielectric layer in the patterned area. Metal dishing and dielectric erosion are usually related to variables such as line width and spacing of the pattern, showing great system and regularity. Surface topography fluctuations after CMP, such as metal discs and dielectric erosion, will affect the depth of focus of the subsequent photolithography process, and will also affect the resistance and other electrical characteristics of the interconnection lines, thereby affecting the delay of the interconnection lines and affecting the yield of the chip. The surface morphology is evaluated by the surface morphology parameters, and the surface morphology can be controlled within an acceptable range during the design and process according to actual needs.

As shown in Figure 3, it is a flow chart for calculating the surface topography parameters of the chip at the current process stage according to the surface topography parameters, process parameters, layout characteristic parameters and the selection ratio of the current process stage grinding liquid in the previous process stage, specifically Can include the following steps:

Step 301: Calculate the pressure distribution of the chip according to the surface topography parameters, process parameters, layout feature parameters of the previous process stage and the selection ratio of the polishing liquid in the current process stage.

Step 302: Calculate chip removal rate according to pressure distribution.

Step 303: Calculate the surface topography parameters at the current process stage according to the removal rate.

Since the pressure distribution is related to various factors such as the surface morphology and process conditions of the chip, and the pressure distribution will also affect the material removal rate, the surface morphology parameters, process parameters, layout characteristic parameters and After the pressure distribution is calculated from the selection ratio of the grinding liquid, the removal rate can be calculated by multiplying the pressure distribution by a specific coefficient, where the specific coefficient can be obtained by fitting the experimental data. Due to the specific type of grinding fluid and the specific material to be removed, the surface topography parameters can be calculated according to the removal rate.

As shown in Figure 4, the method for evaluating chip surface topography after chemical mechanical polishing may further include step 206: judging whether the current process stage has reached the grinding end point; if it is judged that the current process stage has reached the grinding end point, then ending the surface topography evaluation; if If it is judged that the current process stage has not reached the grinding end point, then go to step 207: calculate the distribution of high and low areas on the chip surface according to the surface topography parameters of the current process stage.

During the CMP process, the surface topography of the chip can be evaluated in real time. For a specific process stage, when the grinding end point is reached, the surface topography evaluation will end. Wherein, it can be judged whether the grinding end point has been reached based on the duration of the grinding, the grinding thickness, etc., and the specific judgment can be made according to the actual set standard.

As shown in Figure 5, after calculating the distribution of high and low areas on the chip surface, the method for evaluating chip surface topography after chemical mechanical polishing may also include the following steps:

Step 208: Determine whether the distribution of high and low areas on the chip surface between the previous process stage and the current process stage has changed.

If the selection ratio of the polishing liquid changes, the distribution of the high and low areas on the chip surface may change. For the uneven surface of the chip, the distribution of the high and low areas can be characterized by relatively high areas and relatively low areas. The distribution of high and low areas The situation changes refer to the relatively high area and relatively low area of the chip surface in the previous process stage, which are changed to the relatively low area and relatively high area of the chip surface in the current process stage, that is, the exchange of the relatively high area and the relatively low area.

Step 209: If yes, exchange the relatively high area and the relatively low area in the distribution of high and low areas.

If it is found that the distribution of the high and low areas on the surface of the chip changes after judgment, it means that the removal rate of different materials changes due to the change in the selection ratio of the polishing liquid, which in turn leads to the fact that the original relatively high area has changed from a certain moment to grinding. relatively low area. For example: in stage P1, the removal rate of material A is greater than that of material B, then after stage P1, material A is concave, while material B is convex; however, in stage P2, the removal rate of material A is less than The removal rate of material B, at a certain point in the P2 stage, material A will change from concave to convex, and material B will change from convex to concave. That is, in the event of a change in the selectivity ratio, it will result in an exchange between an originally higher region and an originally lower region. After the distribution of high and low areas changes, the original high area becomes a lower area, and the original low area becomes a higher area, and the relevant parameters need to be adjusted accordingly. For example, the density of the original high area is ρ _B , The density of the lower region is ρ _A , while the density of the higher region after exchange is ρ _A , and the density of the lower region is ρ _B , where ρ _A =1−ρ _B .

Since the distribution of high and low areas after exchange can reflect the real surface topography of the chip, the distribution of high and low areas after exchange is used as the input for calculating the surface topography parameters of the current process stage, so as to ensure the accuracy of the evaluation results. In addition, by feeding back the distribution of high and low areas after the exchange to the input end of the next process stage, it can ensure that the chip surface topography obtained in the next process stage is closer to the actual situation, thereby ensuring the accuracy of subsequent evaluation results.

In the method for evaluating chip surface topography after chemical mechanical polishing provided in the embodiments of the present invention, when the selection ratio of the polishing liquid in the previous process stage and the current process stage changes, according to the surface topography parameters and process parameters of the previous process stage , layout feature parameters and the selection ratio of the grinding fluid in the current process stage, calculate the surface topography parameters of the chip in the current process stage, and then conduct surface topography evaluation, fully consider the influence of the polishing fluid selection ratio on the surface topography of the chip, and be able to improve the performance of the chip. accurate evaluation of the surface morphology.

Correspondingly, the embodiment of the present invention also provides a chip surface topography evaluation system after chemical mechanical polishing. As shown in FIG. 6, the chip surface topography evaluation system after chemical mechanical polishing may include:

The first acquisition module 401 is used to acquire the surface topography parameters of the chip in the previous process stage and the selection ratio of the polishing liquid;

The second obtaining module 402 is used to obtain the selection ratio of the process parameters and the grinding liquid in the current process stage;

A layout division module 403, configured to divide the current surface layout of the chip into a plurality of continuous panes;

A feature extraction module 404, configured to extract layout feature parameters of each pane respectively;

The first judging module 405 is used to judge whether the selection ratio of the grinding liquid changes;

The calculation module 406 is used to calculate the selection ratio of the chip in the current process according to the surface topography parameters, process parameters, layout feature parameters and the current process stage polishing liquid selection ratio after the first judgment module 405 judges that the selection ratio has changed. Surface topography parameters at the process stage;

The evaluation module 407 is configured to evaluate the surface topography of the chip according to the surface topography parameters at the current process stage.

As shown in Figure 7, the calculation module 406 may include:

The first calculation unit 501 is used to calculate the pressure distribution of the chip according to the surface topography parameters, process parameters, layout characteristic parameters of the previous process stage and the selection ratio of the polishing liquid in the current process stage;

The second calculation unit 502 is used to calculate the chip removal rate according to the pressure distribution

The third calculation unit 503 is used to calculate the surface topography parameters of the current process stage according to the removal rate.

As shown in Figure 8, the chip surface morphology evaluation system after chemical mechanical polishing may further include:

The second judging module 408 is used to judge whether the current process stage reaches the grinding end point;

The evaluation module 407 is also used to end the surface topography evaluation after the second judging module 408 judges that the current process stage has reached the grinding end point.

As shown in Figure 9, the chip surface morphology evaluation system after chemical mechanical polishing may further include:

The third judging module 409 is used to judge whether the distribution of high and low areas on the chip surface in the previous process stage and the current process stage has changed;

The exchange module 410 is used to exchange the relatively high area and the relatively low area in the distribution of the high and low areas after the third judging module 409 judges that the distribution of the high and low areas on the chip surface in the previous process stage and the current process stage has changed. .

The chip surface topography evaluation system after chemical mechanical polishing provided by the embodiment of the present invention, in the case that the polishing liquid selection ratio of the previous process stage and the current process stage changes, according to the surface topography parameters and process parameters of the previous process stage , layout characteristic parameters and the selection ratio of the grinding liquid in the current process stage, calculate the surface topography parameters of the chip in the current process stage, and then conduct surface topography evaluation, fully consider the influence of the polishing liquid selection ratio on the surface topography of the chip, and be able to improve the performance of the chip. accurate evaluation of the surface morphology.

Each embodiment in this specification is described in a progressive manner, the same and similar parts of each embodiment can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, as for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and for related parts, please refer to part of the description of the method embodiment. The system embodiments described above are only illustrative, and the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in One place, or it can be distributed to multiple network elements. Part or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment. It can be understood and implemented by those skilled in the art without creative effort.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection of the present invention. within range.

Claims (10)

1. chip surface morphology evaluating method after a chemically mechanical polishing, it is characterised in that including:

Obtain the selection ratio of the chip surface topography parameters at a upper operation stage and lapping liquid;

Obtain the technological parameter in current process stage and the selection ratio of lapping liquid;

The Current surface domain of chip is divided into multiple continuous pane, extracts the domain characteristic parameter of each described pane respectively;

Judge that whether the selection of lapping liquid than changes, if, then the selection ratio according to the surface topography parameters of a described upper operation stage, described technological parameter, described domain characteristic parameter and described current process stage lapping liquid, calculates the described chip surface topography parameters in the current process stage;

The surface topography of described chip is evaluated and tested by the surface topography parameters according to the described current process stage.

2. chip surface morphology evaluating method after chemically mechanical polishing according to claim 1, it is characterized in that, the described selection ratio according to the surface topography parameters of a described upper operation stage, described technological parameter, described domain characteristic parameter and described current process stage lapping liquid, calculate the described chip surface topography parameters in the current process stage, including:

Selection ratio according to the surface topography parameters of a described upper operation stage, described technological parameter, described domain characteristic parameter and described current process stage lapping liquid, the pressure distribution of computing chip;

Clearance according to described calculation of pressure distribution chip;

The surface topography parameters in current process stage is calculated according to described clearance.

3. chip surface morphology evaluating method after the chemically mechanical polishing according to any one of claim 1 or 2, it is characterised in that described method also includes: judge whether the current process stage arrives grinding endpoint, if it is, terminate surface topography evaluation and test.

4. chip surface morphology evaluating method after chemically mechanical polishing according to claim 3, it is characterized in that: if the current process stage do not arrive grinding endpoint, then the height Regional Distribution of Registered according to the surface topography parameters computing chip surface in described current process stage.

5. chip surface morphology evaluating method after chemically mechanical polishing according to claim 4, it is characterised in that described method also includes:

Judge whether the height Regional Distribution of Registered of a upper operation stage and the chip surface in current process stage changes;

If it is, the relatively high district in described height Regional Distribution of Registered and relatively low district are swapped mutually.

6. chip surface morphology evaluating system after a chemically mechanical polishing, it is characterised in that including:

First acquisition module, for obtaining the selection ratio of the chip surface topography parameters at a upper operation stage and lapping liquid;

Second acquisition module, for obtaining the technological parameter in current process stage and the selection ratio of lapping liquid;

Domain divides module, for the Current surface domain of chip is divided into multiple continuous pane;

Characteristic extracting module, for extracting the domain characteristic parameter of each described pane respectively;

First judge module, for judging that whether the selection of lapping liquid than changes;

Computing module, for judging to select ratio after changing at described first judge module, selection ratio according to the surface topography parameters of a upper operation stage, technological parameter, domain characteristic parameter and current process stage lapping liquid, computing chip is at the surface topography parameters in current process stage;

Evaluation and test module, evaluates and tests the surface topography of described chip for the surface topography parameters according to the described current process stage.

7. chip surface morphology evaluating system after chemically mechanical polishing according to claim 6, it is characterised in that described computing module includes:

First computing unit, for the selection ratio according to the surface topography parameters of a described upper operation stage, described technological parameter, described domain characteristic parameter and described current process stage lapping liquid, the pressure distribution of computing chip;

Second computing unit, for the clearance according to described calculation of pressure distribution chip;

3rd computing unit, for calculating the surface topography parameters in current process stage according to described clearance.

8. chip surface morphology evaluating system after the chemically mechanical polishing according to any one of claim 6 or 7, it is characterised in that described system also includes:

Second judge module, is used for judging whether the current process stage arrives grinding endpoint;

Described evaluation and test module, is additionally operable to, after described second judge module judges that the described current process stage arrives grinding endpoint, terminate surface topography evaluation and test.

9. chip surface morphology evaluating system after chemically mechanical polishing according to claim 8, it is characterised in that:

Described computing module, is additionally operable to the height Regional Distribution of Registered after described second judge module judges that the current process stage does not arrive grinding endpoint, according to described surface topography parameters computing chip surface.

10. chip surface morphology evaluating system after chemically mechanical polishing according to claim 9, it is characterised in that described system also includes:

3rd judge module, for judging whether the height Regional Distribution of Registered of a upper operation stage and the chip surface in current process stage changes;

Switching Module, after on judging at described 3rd judge module, the height Regional Distribution of Registered of an operation stage and the chip surface in current process stage changes, swaps mutually by the relatively high district in described height Regional Distribution of Registered and relatively low district.