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CN105591020B - A kind of high-frequency transducer with curve focusing array and preparation method thereof - Google Patents

A kind of high-frequency transducer with curve focusing array and preparation method thereof Download PDF

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CN105591020B
CN105591020B CN201610126990.2A CN201610126990A CN105591020B CN 105591020 B CN105591020 B CN 105591020B CN 201610126990 A CN201610126990 A CN 201610126990A CN 105591020 B CN105591020 B CN 105591020B
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CN105591020A (en
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朱本鹏
许炯
杨晓非
陈实
张悦
欧阳君
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Huazhong University of Science and Technology
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    • HELECTRICITY
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    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/704Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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  • Chemical & Material Sciences (AREA)
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  • Transducers For Ultrasonic Waves (AREA)

Abstract

本发明公开了一种具有曲面聚焦阵列的高频超声换能器及其制备方法,所述高频超声换能器包括曲面衬底,所述曲面衬底的上表面为弧度60°~180°的环形,所述曲面衬底的上表面的全部或部分区域覆盖有曲面聚焦阵列,所述曲面聚焦阵列的底部为高度4μm~20μm的底电极,所述底电极之上设置有16个~256个平行设置的弧形阵元,所述弧形阵元的底部为高度7μm~100μm的铌镁酸铅钛酸铅厚膜,顶部为高度100nm~300nm的金电极,且所述弧形阵元的圆心位于所述曲面衬底上表面的中心轴上。通过本发明,从而制备了一种具有铌镁酸铅钛酸铅曲面厚膜聚焦阵列的超声换能器,在高分辨率的高频超声换能器中具有良好的应用前景。

The invention discloses a high-frequency ultrasonic transducer with a curved surface focusing array and a preparation method thereof. The high-frequency ultrasonic transducer includes a curved substrate, and the upper surface of the curved substrate has an arc of 60° to 180° The whole or part of the upper surface of the curved substrate is covered with a curved focusing array, the bottom of the curved focusing array is a bottom electrode with a height of 4 μm to 20 μm, and 16 to 256 arc-shaped array elements arranged in parallel, the bottom of the arc-shaped array element is a thick film of lead magnesium niobate titanate with a height of 7 μm to 100 μm, and the top is a gold electrode with a height of 100 nm to 300 nm, and the arc-shaped array element The center of the circle is located on the central axis of the upper surface of the curved substrate. Through the invention, an ultrasonic transducer with lead magnesium niobate titanate curved surface thick-film focusing array is prepared, which has a good application prospect in high-resolution high-frequency ultrasonic transducers.

Description

一种具有曲面聚焦阵列的高频超声换能器及其制备方法A high-frequency ultrasonic transducer with curved surface focusing array and its preparation method

技术领域technical field

本发明属于高频超声换能器领域,更具体地,涉及一种具有曲面聚焦阵列的高频超声换能器及其制备方法。The invention belongs to the field of high-frequency ultrasonic transducers, and more specifically relates to a high-frequency ultrasonic transducer with a curved surface focusing array and a preparation method thereof.

背景技术Background technique

超声换能器是实现声信号和电信号转换的器件,超声换能器的横向分辨率由以下公式决定:The ultrasonic transducer is a device that realizes the conversion of acoustic signals and electrical signals. The lateral resolution of the ultrasonic transducer is determined by the following formula:

其中,R为横向分辨率,c是指介质中的声速,fc为中心频率,F#为焦距和孔径尺寸的比例,λ为声波的波长,因此,焦距和孔径尺寸的比例越大,横向分辨率则越高。在孔径尺寸一定的时候,焦距越小时,分辨率则越高,图1为超声换能器上一个单振元的声场。焦距为焦点到阵元中心的距离,由于平面焦点较远,焦距比较大。因此,曲面的压电厚膜能提高高频超声换能器的横向分辨率。Among them, R is the lateral resolution, c is the speed of sound in the medium, f c is the center frequency, F # is the ratio of the focal length to the aperture size, and λ is the wavelength of the sound wave, therefore, the larger the ratio of the focal length to the aperture size, the lateral The higher the resolution. When the aperture size is constant, the smaller the focal length, the higher the resolution. Figure 1 shows the sound field of a single vibration element on the ultrasonic transducer. The focal length is the distance from the focal point to the center of the array element. Since the focal point of the plane is far away, the focal length is relatively large. Therefore, the curved piezoelectric thick film can improve the lateral resolution of high-frequency ultrasonic transducers.

现有技术中超声换能器中曲面聚集阵列的制备需要首先制备好平面的压电厚膜,然后通过不锈钢的圆柱按压在曲面衬底上成为曲面压电厚膜,之后进行机械切割,形成阵列。如非专利文献Cylindrically shaped ultrasonic linear array fabricated usingPIMNT/epoxy 1-3piezoelectric composite(Sensors and Actuators A:PhysicalVolume 192,1April 2013,Pages 69–75),由于阵列的厚度达到了0.55mm,因此频率较低,仅有2MHz左右。此外,现在的超声换能器中普遍使用锆钛酸铅(PZT)作为压电材料,而该材料的电致应变系数,以及机电耦合系数都较低,难以满足大多数超声换能器的需求。In the prior art, the preparation of the curved surface aggregation array in the ultrasonic transducer needs to prepare a flat piezoelectric thick film first, and then press it on the curved surface substrate by a stainless steel cylinder to form a curved piezoelectric thick film, and then perform mechanical cutting to form the array. . For example, in the non-patent literature Cylindrically shaped ultrasonic linear array fabricated using PIMNT/epoxy 1-3piezoelectric composite (Sensors and Actuators A: Physical Volume 192, 1April 2013, Pages 69–75), since the thickness of the array reaches 0.55mm, the frequency is low, only There are about 2MHz. In addition, lead zirconate titanate (PZT) is widely used as the piezoelectric material in current ultrasonic transducers, and the electric strain coefficient and electromechanical coupling coefficient of this material are low, which is difficult to meet the needs of most ultrasonic transducers. .

发明内容Contents of the invention

针对现有技术的以上缺陷或改进需求,本发明提供了一种具有曲面聚焦阵列的高频超声换能器及其制备方法及其制备方法,其目的在于通过移印法制备曲面聚焦阵列,从而增强超声换能器的横向分辨率,提高其性能。In view of the above defects or improvement needs of the prior art, the present invention provides a high-frequency ultrasonic transducer with a curved surface focusing array and its preparation method and its preparation method, the purpose of which is to prepare a curved surface focusing array by pad printing, so that Enhances the lateral resolution and performance of ultrasound transducers.

为实现上述目的,按照本发明的一个方面,提供了一种高频超声换能器,包括曲面衬底以及曲面聚焦阵列,所述曲面衬底的上表面为弧度60°~180°的环形,所述曲面聚焦阵列覆盖于所述曲面衬底的上表面的全部或部分区域,所述曲面聚焦阵列的底部为高度4μm~20μm的底电极,所述底电极之上设置有16个~256个平行的弧形阵元,所述弧形阵元由其底部高度为7μm~100μm的铌镁酸铅钛酸铅厚膜及其顶部高度为100nm~300nm的金电极组成,且所述弧形阵元的弧心位于所述曲面衬底上表面的中心轴上。In order to achieve the above object, according to one aspect of the present invention, a high-frequency ultrasonic transducer is provided, including a curved substrate and a curved focusing array, the upper surface of the curved substrate is a ring with an arc of 60° to 180°, The curved surface focusing array covers all or part of the upper surface of the curved surface substrate, the bottom of the curved surface focusing array is a bottom electrode with a height of 4 μm to 20 μm, and 16 to 256 bottom electrodes are arranged on the bottom electrode Parallel arc-shaped array elements, the arc-shaped array elements are composed of a lead magnesium niobate titanate thick film with a bottom height of 7 μm to 100 μm and a gold electrode with a top height of 100 nm to 300 nm, and the arc array The arc center of the element is located on the central axis of the upper surface of the curved substrate.

优选地,所述曲面衬底的材料为压电陶瓷或者金属氧化物。Preferably, the material of the curved substrate is piezoelectric ceramics or metal oxides.

优选地,所述弧形阵元的宽度为24μm~60μm,间距为33μm~76μm。Preferably, the width of the arc-shaped array element is 24 μm-60 μm, and the pitch is 33 μm-76 μm.

优选地,所述底电极的材料为惰性金属。Preferably, the material of the bottom electrode is an inert metal.

按照本发明的另一方面,还提供了一种该高频超声换能器的制备方法,所述制备方法包括以下步骤:According to another aspect of the present invention, a kind of preparation method of this high-frequency ultrasonic transducer is also provided, and described preparation method comprises the following steps:

S1.利用移印法在曲面衬底的上表面制备高度为4μm~20μm的底电极,所述曲面衬底的上表面为弧度60°~180°的环形;S1. Prepare a bottom electrode with a height of 4 μm to 20 μm on the upper surface of the curved substrate by pad printing, and the upper surface of the curved substrate is a ring with an arc of 60° to 180°;

S2.利用移印法在底电极上制备高度为7μm~100μm的铌镁酸铅钛酸铅厚膜;S2. Preparing a thick film of lead magnesium niobate titanate with a height of 7 μm to 100 μm on the bottom electrode by pad printing;

S3.利用溅射法在所述铌镁酸铅钛酸铅厚膜上制备高度为100nm~300nm的金电极;S3. Prepare a gold electrode with a height of 100nm-300nm on the lead magnesium niobate titanate thick film by sputtering;

S4.使用激光平行切割所述金电极与所述铌镁酸铅钛酸铅厚膜,从而形成16个~256个平行设置的弧形阵元,使得所述弧形阵元的底部为铌镁酸铅钛酸铅厚膜,顶部为金电极,且所述弧形阵元的弧心位于所述曲面衬底上表面的中心轴上。S4. Use a laser to cut the gold electrode and the lead magnesium niobate titanate thick film in parallel, thereby forming 16 to 256 arc-shaped array elements arranged in parallel, so that the bottom of the arc-shaped array elements is magnesium niobate Lead acid lead titanate thick film, the top is a gold electrode, and the arc center of the arc-shaped array element is located on the central axis of the upper surface of the curved substrate.

优选地,所述步骤S2具体为:Preferably, the step S2 is specifically:

S21.将粒径为200nm~500nm的铌镁酸铅钛酸铅粉末均匀分散于10%~20%的聚乙二醇溶液中,使得所述铌镁酸铅钛酸铅粉末与所述聚乙二醇溶液的质量比为7:3~4:1,获得压电浆料;S21. Uniformly disperse the lead magnesium niobate lead titanate powder with a particle size of 200nm to 500nm in a 10% to 20% polyethylene glycol solution, so that the lead magnesium niobate titanate powder and the polyethylene glycol solution The mass ratio of the diol solution is 7:3 to 4:1 to obtain a piezoelectric slurry;

S22.利用移印法将所述压电浆料转移至底电极上,干燥后形成高度为5μm~12μm的压电涂层,并重复以上步骤直至所述压电涂层叠加至所需高度;S22. Transfer the piezoelectric slurry to the bottom electrode by a pad printing method, form a piezoelectric coating with a height of 5 μm to 12 μm after drying, and repeat the above steps until the piezoelectric coating is stacked to a desired height;

S23.300℃~350℃加热,直至所述压电涂层中的聚合物充分受热分解并挥发;S23. Heating at 300°C to 350°C until the polymer in the piezoelectric coating is fully decomposed by heat and volatilized;

S24.800℃~1000℃加热使得所述压电涂层中的铌镁酸铅钛酸铅粉末烧结。S24. Heating at 800° C. to 1000° C. to sinter the lead magnesium niobate titanate powder in the piezoelectric coating.

作为进一步优选地,所述步骤S22的具体方法为,用和所述曲面衬底的上表面的形貌相匹配的模具取压电浆料,将其转移至所述曲面衬底的上表面,100℃~120℃加热干燥后形成高度为5μm~12μm的压电涂层,并重复以上步骤直至所述压电涂层叠加至所需高度。As a further preference, the specific method of step S22 is to use a mold that matches the shape of the upper surface of the curved substrate to take the piezoelectric slurry and transfer it to the upper surface of the curved substrate, After heating and drying at 100° C. to 120° C., a piezoelectric coating with a height of 5 μm to 12 μm is formed, and the above steps are repeated until the piezoelectric coating is stacked to a desired height.

作为更进一步优选地,所述模具的材料为硅胶。As a further preference, the material of the mold is silica gel.

作为进一步优选地,在所述步骤S21中,所述铌镁酸铅钛酸铅粉末与所述聚乙二醇溶液的质量比为2:1~3:1。As a further preference, in the step S21, the mass ratio of the lead magnesium niobate titanate powder to the polyethylene glycol solution is 2:1˜3:1.

作为进一步优选地,在所述步骤S23中加热的时间为30min~60min。As a further preference, the heating time in the step S23 is 30 minutes to 60 minutes.

总体而言,通过本发明所构思的以上技术方案与现有技术相比,由于通过移印法在曲面衬底上制备了曲面聚焦阵列,具有以下有益效果:Generally speaking, compared with the prior art, the above technical solution conceived by the present invention has the following beneficial effects because the curved surface focusing array is prepared on the curved surface substrate by the pad printing method:

1、在环形的曲面衬底上直接制备曲面聚焦阵列,再切割成为弧形阵元,与现有技术中的按压法相比,将弧形阵元的高度降低到了100μm以下,从而提高了超声换能器的横向分辨率,改善了其在高频的转换效果;1. The curved surface focusing array is directly prepared on the circular curved surface substrate, and then cut into arc-shaped array elements. Compared with the pressing method in the prior art, the height of the arc-shaped array elements is reduced to less than 100 μm, thereby improving the ultrasonic conversion rate. The horizontal resolution of the transducer improves its conversion effect at high frequencies;

2、利用激光切割代替普通的机械切割,提高了切割的精度;2. Using laser cutting instead of ordinary mechanical cutting improves the cutting accuracy;

3、利用铌镁酸铅钛酸铅粉末分散于10%~20%的聚乙二醇溶液,从而制备得到了铌镁酸铅钛酸铅厚膜,由于该材料具有高电致应变系数,以及机电耦合系数,用其取代传统的锆钛酸铅厚膜,提高了超声换能器的压电性能、电致应变系数以及机电耦合系数。3. Using lead magnesium niobate titanate powder dispersed in 10% to 20% polyethylene glycol solution to prepare a thick film of lead magnesium niobate titanate, because the material has a high electrical strain coefficient, and The electromechanical coupling coefficient, which is used to replace the traditional lead zirconate titanate thick film, improves the piezoelectric performance, electric strain coefficient and electromechanical coupling coefficient of the ultrasonic transducer.

附图说明Description of drawings

图1为超声换能器的横向分辨率示意图;Fig. 1 is the lateral resolution schematic diagram of ultrasonic transducer;

图2a为本发明实施例1的曲面PZT衬底的正视图;Fig. 2 a is the front view of the curved PZT substrate of embodiment 1 of the present invention;

图2b为本发明实施例1的曲面PZT衬底的俯视图;Fig. 2 b is the plan view of the curved PZT substrate of embodiment 1 of the present invention;

图3a为本发明实施例1的硅胶模具的正视图;Fig. 3 a is the front view of the silicone mold of embodiment 1 of the present invention;

图3b为本发明实施例1的硅胶模具的侧视图;Fig. 3 b is the side view of the silicone mold of embodiment 1 of the present invention;

图4为本发明实施例1的铌镁酸铅钛酸铅厚膜的曲面截面SEM图(从左下角到右上角分别为:铌镁酸铅钛酸铅压电厚膜,Pt电极,PZT曲面衬底);Fig. 4 is the SEM figure of the curved surface of the lead magnesium niobate titanate thick film of embodiment 1 of the present invention (respectively from the lower left corner to the upper right corner: lead magnesium niobate titanate piezoelectric thick film, Pt electrode, PZT curved surface Substrate);

图5为本发明实施例1的整体结构示意图;FIG. 5 is a schematic diagram of the overall structure of Embodiment 1 of the present invention;

图6为本发明实施例1的曲面聚焦阵列示意图;FIG. 6 is a schematic diagram of a curved surface focusing array according to Embodiment 1 of the present invention;

在所有附图中,相同的附图标记用来表示相同的元件或结构,其中:1-曲面单阵元,2-平面单阵元,3-曲面单阵元的焦点区,4-平面单阵元的焦点区,5-曲面单阵元波束,6-平面单阵元波束,11-曲面衬底,12-底电极,13-铌镁酸铅钛酸铅厚膜,14-金电极。In all the drawings, the same reference numerals are used to denote the same elements or structures, wherein: 1-curved surface single array element, 2-plane single array element, 3-focus area of curved surface single array element, 4-plane single array element The focal area of the array element, 5-curved surface single array element beam, 6-plane single array element beam, 11-curved surface substrate, 12-bottom electrode, 13-lead magnesium niobate titanate thick film, 14-gold electrode.

具体实施方式detailed description

为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。此外,下面所描述的本发明各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以相互组合。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

本发明的一个方面,提供了一种高频超声换能器,包括曲面衬底以及曲面聚焦阵列,所述曲面衬底的上表面为弧度60°~180°的环形,所述曲面聚焦阵列覆盖于所述曲面衬底的上表面的全部或部分区域,所述曲面聚焦阵列的底部为高度4μm~20μm的底电极,所述底电极之上设置有16个~256个宽度、弧长、弧度以及高度都相同,且弧心皆位于所述曲面衬底上表面的中心轴上的平行设置的弧形阵元,所述弧形阵元的底部为高度7μm~100μm的铌镁酸铅钛酸铅厚膜,顶部为高度100nm~300nm的金电极。One aspect of the present invention provides a high-frequency ultrasonic transducer, including a curved substrate and a curved focusing array. On all or part of the upper surface of the curved substrate, the bottom of the curved surface focusing array is a bottom electrode with a height of 4 μm to 20 μm, and 16 to 256 widths, arc lengths, and arcs are arranged on the bottom electrode. and parallel arc array elements with the same height and arc centers located on the central axis of the upper surface of the curved substrate. The bottom of the arc array elements is lead magnesium niobate titanate with a height of 7 μm to 100 μm Lead thick film, the top is a gold electrode with a height of 100nm to 300nm.

其中,所述曲面衬底的材料为压电陶瓷或者金属氧化物,所述底电极的材料为惰性金属;而弧形阵元的宽度和间距与声波的波长相关,而高频超声换能器频率范围为20MHz~200MHz,而高频超声换能器一般用在医学上,检测人体组织和器官,声音在人体中的传播速度为1540m/s,而弧形阵元的间距小于等于半波长,因此弧形阵元的宽度通常为20μm~50μm,间距通常为30μm~70μm;其长度(即弧形阵元对应的弧长)需满足弧度在60°以上的要求,例如,当曲面衬底的上表面的半径为5mm时,弧形阵元的长度通常为5mm~15mm。Wherein, the material of the curved surface substrate is piezoelectric ceramics or metal oxide, and the material of the bottom electrode is an inert metal; while the width and spacing of the arc-shaped array elements are related to the wavelength of the sound wave, and the high-frequency ultrasonic transducer The frequency range is 20MHz to 200MHz, and high-frequency ultrasonic transducers are generally used in medicine to detect human tissues and organs. The propagation speed of sound in the human body is 1540m/s, and the distance between arc array elements is less than or equal to half a wavelength. Therefore, the width of the arc-shaped array element is usually 20 μm to 50 μm, and the spacing is usually 30 μm to 70 μm; its length (that is, the arc length corresponding to the arc-shaped array element) must meet the requirements of an arc of more than 60°. For example, when the curved surface substrate When the radius of the upper surface is 5 mm, the length of the arc array element is usually 5 mm to 15 mm.

该超声换能器的制备方法包括以下步骤:The preparation method of the ultrasonic transducer comprises the following steps:

S1.利用移印法在曲面衬底的上表面制备高度为4μm~20μm的底电极,所述曲面衬底的上表面为弧度60°~180°的环形;S1. Prepare a bottom electrode with a height of 4 μm to 20 μm on the upper surface of the curved substrate by pad printing, and the upper surface of the curved substrate is a ring with an arc of 60° to 180°;

S2.利用移印法在底电极上制备高度为7μm~100μm的铌镁酸铅钛酸铅厚膜;S2. Preparing a thick film of lead magnesium niobate titanate with a height of 7 μm to 100 μm on the bottom electrode by pad printing;

S3.通过控制溅射功率、溅射压强和溅射时间,利用溅射法在所述铌镁酸铅钛酸铅厚膜上制备高度为100nm~300nm的金电极作为顶电极;例如利用射频溅射,功率为100w,压强为0.5Pa,速率为0.3nm/s,溅射时间6min,可获得厚度为100nm的金电极;S3. By controlling sputtering power, sputtering pressure and sputtering time, prepare a gold electrode with a height of 100nm to 300nm on the lead magnesium niobate titanate thick film as a top electrode by sputtering; for example, use radio frequency sputtering Sputtering, the power is 100w, the pressure is 0.5Pa, the rate is 0.3nm/s, and the sputtering time is 6min, a gold electrode with a thickness of 100nm can be obtained;

S4.使用激光平行切割所述金电极与所述铌镁酸铅钛酸铅厚膜,其切割的深度方向与曲面衬底的上表面相垂直,同时通过控制切割时间可以避免切割到底电极,从而形成16个~256个大小相同且平行设置的弧形阵元,使得所述弧形阵元的底部为铌镁酸铅钛酸铅厚膜,顶部为金电极,且所述弧形阵元的弧心位于所述曲面衬底上表面的中心轴上。S4. Use a laser to cut the gold electrode and the lead magnesium niobate titanate thick film in parallel, the depth direction of the cutting is perpendicular to the upper surface of the curved substrate, and the bottom electrode can be avoided by controlling the cutting time, thereby Forming 16 to 256 arc-shaped array elements of the same size and arranged in parallel, so that the bottom of the arc-shaped array elements is a thick film of lead magnesium niobate titanate, the top is a gold electrode, and the arc-shaped array elements The arc center is located on the central axis of the upper surface of the curved substrate.

其中,步骤S1中的移印法具体为,用和所述曲面衬底的上表面的形貌相匹配的模具取惰性金属浆料,并转移至所述曲面衬底表面,150℃~200℃以下加热,使得浆料中的溶剂完全挥发,然后再在1150℃~1250℃烧结,获得高度为4μm~20μm的底电极。Wherein, the pad printing method in step S1 is specifically, using a mold matching the shape of the upper surface of the curved substrate to take the inert metal paste, and transfer it to the surface of the curved substrate, at 150°C to 200°C After heating, the solvent in the slurry is completely volatilized, and then sintered at 1150° C. to 1250° C. to obtain a bottom electrode with a height of 4 μm to 20 μm.

而所述步骤S2中的移印法相对复杂,其具体步骤为:The pad printing method in the step S2 is relatively complicated, and its specific steps are:

S21.由于铌镁酸铅钛酸铅粉末比例过高时,压电浆料过于浓稠,不利于移印,而聚合物溶液质量过高时,压电浆料较稀,厚膜没法成型;因此以7:3~4:1的质量比(优选为2:1~3:1)将铌镁酸铅钛酸铅粉末均匀分散于10%~20%的聚乙二醇溶液中,制备得到压电浆料,所述铌镁酸铅钛酸铅粉末的粒径为200nm~500nm,以保证形成的铌镁酸铅钛酸铅厚膜较为均匀;当聚乙二醇溶液的浓度过低时,黏性太小,无法将粉末粘合在一起,浓度过高时,聚乙二醇挥发后留下空隙比较大,影响超声换能器的机械性能;S21. When the proportion of lead magnesium niobate titanate powder is too high, the piezoelectric slurry is too thick, which is not conducive to pad printing. When the quality of the polymer solution is too high, the piezoelectric slurry is thin, and thick films cannot be formed. ; Therefore with the mass ratio of 7:3~4:1 (preferably 2:1~3:1) lead magnesium niobate lead titanate powder is uniformly dispersed in 10%~20% polyethylene glycol solution, prepares The piezoelectric slurry is obtained, and the particle size of the lead magnesium niobate titanate powder is 200nm~500nm, so as to ensure that the formed lead magnesium niobate titanate thick film is relatively uniform; when the concentration of the polyethylene glycol solution is too low When the viscosity is too small, the powder cannot be bonded together. When the concentration is too high, the polyethylene glycol will leave a relatively large gap after volatilization, which will affect the mechanical properties of the ultrasonic transducer;

S22.用和所述曲面衬底的上表面的形貌相匹配的模具取压电浆料,并转移至所述曲面衬底表面,100℃~120℃加热干燥,以免后面温度升高过快,水蒸气迅速蒸发使得压电厚膜产生裂纹,从而形成高度为5μm~12μm的压电涂层,并重复以上步骤直至所述压电涂层叠加至所需高度;S22. Take the piezoelectric slurry with a mold matching the shape of the upper surface of the curved substrate, transfer it to the surface of the curved substrate, and heat and dry it at 100°C to 120°C to prevent the subsequent temperature from rising too quickly , the rapid evaporation of water vapor causes cracks in the piezoelectric thick film, thereby forming a piezoelectric coating with a height of 5 μm to 12 μm, and repeating the above steps until the piezoelectric coating is stacked to the required height;

S23.300℃~350℃加热0.5h~1h,直至所述压电涂层中的聚乙二醇受热分解并挥发;S23. Heating at 300°C to 350°C for 0.5h to 1h, until the polyethylene glycol in the piezoelectric coating is thermally decomposed and volatilized;

S24.800℃~1000℃加热使得所述压电涂层中的铌镁酸铅钛酸铅粉末烧结,获得所述铌镁酸铅钛酸铅厚膜。S24. Heating at 800° C. to 1000° C. to sinter the lead magnesium niobate titanate powder in the piezoelectric coating to obtain the lead magnesium niobate titanate thick film.

实施例1压电材料的制备The preparation of embodiment 1 piezoelectric material

实验材料:Experimental Materials:

干净的PZT压电陶瓷曲面衬底:定制好的PZT曲面衬底的高度为7.5mm,宽度为15mm,其内表面为半圆周环形,其直径为5mm,环形的边缘距衬底边缘的距离为2.5mm。其正视图和俯视图分别如图2a和图2b所示。将PZT曲面衬底经过机械打磨以除去表面腐蚀的部分,并用去离子水冲洗,然后在酒精中超声清洗10min,再次用去离子水冲洗后在丙酮中超声清洗10min,然后再次酒精超声清洗10min,最后再用去离子水清洗干净,烘干备用。Clean PZT piezoelectric ceramic curved substrate: the custom-made PZT curved substrate has a height of 7.5mm and a width of 15mm. Its inner surface is a semi-circular ring with a diameter of 5mm. 2.5mm. Its front view and top view are shown in Figure 2a and Figure 2b, respectively. The PZT curved substrate was mechanically polished to remove the corroded part of the surface, rinsed with deionized water, then ultrasonically cleaned in alcohol for 10 minutes, rinsed with deionized water again, ultrasonically cleaned in acetone for 10 minutes, and then ultrasonically cleaned in alcohol for 10 minutes, Finally, rinse with deionized water and dry for later use.

聚合物溶液:按照聚乙二醇4000(PEG-4000)和去离子水质量比为3:20进行混合于烧杯中,混合后放在磁力搅拌器搅拌20min形成15%的聚合物溶液。Polymer solution: Mix in a beaker according to the mass ratio of polyethylene glycol 4000 (PEG-4000) and deionized water at 3:20. After mixing, stir on a magnetic stirrer for 20 minutes to form a 15% polymer solution.

S1.制备底电极S1. Preparation of bottom electrode

准备硅胶模具,其正视图如图3a所示,侧视图如图3b所示;图上可见,其下端直径为5mm的半圆形端与曲面衬底内表面的半圆周环形端恰好匹配,中间宽度为10mm,高度为15mm的矩形段可用于控制该模具。Prepare the silicone mold, its front view is shown in Figure 3a, and its side view is shown in Figure 3b; it can be seen from the figure that the semicircular end with a diameter of 5mm at the lower end matches the semicircular annular end of the inner surface of the curved substrate exactly, and the middle A rectangular segment with a width of 10mm and a height of 15mm can be used to control this mould.

将冷藏的铂浆料(M-Pt100-1,固含量82±0.5%)取出,并在室温条件解冻20min,然后,使用图3所示的硅胶模具将铂浆料均匀移印到PZT曲面衬底上,只需要移印一次即可。将样品放到烘箱中,在200℃烘30min,将铂浆料烘干。之后取出样品,放到炉子里烧结,制备得到厚度为18μm的底电极。烧结过程设置为1200℃加热240min,然后保温10min,之后自然冷却到室温。移印过程中,PZT曲面衬底最好水平放置,而硅胶模具蘸取铂浆料后应该垂直移印,按压过程力量要均匀,避免形成的底电极不均匀,从而影响超声换能器的性能。Take out the refrigerated platinum slurry (M-Pt100-1, solid content 82±0.5%), and thaw it at room temperature for 20 minutes, then use the silicone mold shown in Figure 3 to transfer the platinum slurry evenly onto the PZT curved surface lining On the bottom, it only needs to be printed once. Put the sample in an oven and bake at 200°C for 30 minutes to dry the platinum slurry. Afterwards, the sample was taken out and sintered in a furnace to prepare a bottom electrode with a thickness of 18 μm. The sintering process was set to heat at 1200°C for 240 minutes, then keep the temperature for 10 minutes, and then cool naturally to room temperature. During the pad printing process, it is best to place the PZT curved substrate horizontally, while the silicone mold should be pad printed vertically after dipping the platinum slurry. The force during the pressing process should be uniform to avoid uneven bottom electrodes formed, which will affect the performance of the ultrasonic transducer. .

S21.铌镁酸铅钛酸铅浆料的配置S21. Configuration of lead magnesium niobate titanate slurry

将粒径为200nm~500nm的铌镁酸铅钛酸铅粉末和聚合物溶液以1:3的质量比混合于烧杯中,放在磁力搅拌器上进行30min的磁力搅拌,混合均匀得到铌镁酸铅钛酸铅浆料。Mix lead magnesium niobate titanate powder and polymer solution with a particle size of 200nm to 500nm in a beaker at a mass ratio of 1:3, place on a magnetic stirrer for 30 minutes of magnetic stirring, and mix evenly to obtain magnesium niobate Lead lead titanate paste.

S22.在曲面衬底上制备铌镁酸铅钛酸铅厚膜S22. Preparation of lead magnesium niobate titanate thick film on curved substrate

首先,使用干净的硅胶模具蘸取适量的铌镁酸铅钛酸铅浆料,垂直移印到PZT曲面衬底上,用约1N~10N的力量均匀按压,使得铌镁酸铅钛酸铅厚膜均匀形成。然后,将完成移印的样品放在烘箱中100℃烘干,使浆料中的水分缓慢蒸发掉,避免在后面烧结过程中因为水蒸气快速蒸发导致厚膜产生裂纹。一次移印的铌镁酸铅钛酸铅厚膜压电厚膜的厚度为14μm左右,重复上述步骤5次获得70μm的厚膜。First, use a clean silicone mold to dip in an appropriate amount of lead magnesium niobate titanate slurry, transfer it vertically onto the PZT curved substrate, and press it evenly with a force of about 1N-10N to make the lead magnesium niobate titanate thick. The film was formed uniformly. Then, the pad-printed samples were dried in an oven at 100°C to slowly evaporate the water in the slurry to avoid cracks in the thick film caused by the rapid evaporation of water vapor in the subsequent sintering process. The thickness of the lead niobate magnesium titanate thick film lead piezoelectric thick film printed once is about 14 μm, and the above steps are repeated 5 times to obtain a 70 μm thick film.

S23烘干样品进行烧结。我们的升温过程为第一阶段经过60min将温度从0℃升到300℃,第二阶段在温度为300℃保温30min进行排胶(让PEG4000受热分解);S23 drying the sample for sintering. Our heating process is the first stage to raise the temperature from 0°C to 300°C after 60 minutes, and the second stage to debinding at a temperature of 300°C for 30 minutes (let PEG4000 be thermally decomposed);

S24.经过120min将温度从300℃升到900℃,然后在温度为900℃时保温60min烧结,最后自然降温。经过这个过程在PZT曲面衬底上完成了铌镁酸铅钛酸铅厚膜的制备,曲面衬底上从底部到顶部依次形成了Pt电极以及铌镁酸铅钛酸铅厚膜,其截面SEM图如图4所示,从左下角到右上角分别为:铌镁酸铅钛酸铅压电厚膜、Pt电极以及PZT曲面衬底。S24. After 120 minutes, the temperature was raised from 300°C to 900°C, then kept at 900°C for 60 minutes for sintering, and finally the temperature was naturally lowered. After this process, the lead magnesium niobate titanate thick film was prepared on the PZT curved substrate. The Pt electrode and the lead magnesium niobate titanate thick film were sequentially formed on the curved substrate from the bottom to the top. The cross-section SEM As shown in Figure 4, from the lower left corner to the upper right corner are: lead magnesium niobate titanate piezoelectric thick film, Pt electrode and PZT curved substrate.

S3.频率使用射频,溅射功率100w,溅射压强0.5Pa,溅射速率为0.3nm/s,溅射时间30min,最终在铌镁酸铅钛酸铅厚膜上形成厚度为100nm的金电极作为顶电极,此时在曲面衬底上从底部到顶部依次形成了底电极,铌镁酸铅钛酸铅厚膜以及顶电极,如图5所示。S3. The frequency uses radio frequency, the sputtering power is 100w, the sputtering pressure is 0.5Pa, the sputtering rate is 0.3nm/s, and the sputtering time is 30min. Finally, a gold electrode with a thickness of 100nm is formed on the thick film of lead magnesium niobate titanate As the top electrode, a bottom electrode, a lead magnesium niobate titanate thick film and a top electrode are sequentially formed on the curved substrate from bottom to top, as shown in FIG. 5 .

S4、用激光切割的办法沿曲面衬底的上表面从左至右沿弧线切割金电极以及铌镁酸铅钛酸铅厚膜,通过控制切割时间可以避免切割到底电极,通过控制激光光斑大小控制宽度;将顶电极和铌镁酸铅钛酸铅厚膜切割为由24个平行设置的弧形阵元组成的曲面聚焦阵列,且所述弧形阵元的弧心位于所述曲面衬底上表面的中心轴上;弧形阵元的长度与曲面衬底上表面的半周长相等,宽度为32μm,弧形阵元的间距为50μm,阵列数为24,中心频率为30MHz。S4. Use laser cutting to cut the gold electrode and lead magnesium niobate titanate thick film along the arc from left to right along the upper surface of the curved substrate. By controlling the cutting time, cutting the bottom electrode can be avoided, and by controlling the size of the laser spot Width control; cutting the top electrode and lead magnesium niobate titanate thick film into a curved surface focusing array composed of 24 arc-shaped array elements arranged in parallel, and the arc center of the arc-shaped array elements is located on the curved surface substrate On the central axis of the upper surface; the length of the arc-shaped array elements is equal to the semicircumference length of the upper surface of the curved substrate, the width is 32 μm, the pitch of the arc-shaped array elements is 50 μm, the number of arrays is 24, and the center frequency is 30 MHz.

S5.导线可从底电极和顶电极上依次引出导线;其中,底电极为一整体,直接用一根导线导出即可。而顶电极在每个阵列上,分别从两端接导线。从前至后排序为奇数的阵列从左边引线,排序为偶数的阵列从右边引线,以避免在一边引线引起短路,接上了引线的顶电极阵列的俯视示意图如图6所示。S5. The wires can be led out from the bottom electrode and the top electrode in sequence; wherein, the bottom electrode is a whole and can be directly led out by a wire. And the top electrode is on each array, respectively connected with wires from two ends. The odd-numbered arrays are wired from the left from the front to the back, and the even-numbered arrays are wired from the right to avoid short-circuiting on one side of the wiring.

以相同的步骤重复实施例1,获得实施例2-实施例5,其调整的具体参数如表1所示。Repeat Example 1 with the same steps to obtain Example 2-Example 5, and the specific parameters adjusted are shown in Table 1.

表1Table 1

对实施例1-实施例5进行测试,其中心频率提高到了20MHz~200MHz,超声换能器的压电性能、电致应变系数以及机电耦合系数,均与现有技术相比得到了提高。Tests were carried out on Examples 1 to 5, and the center frequency was increased to 20MHz to 200MHz, and the piezoelectric performance, electrical strain coefficient and electromechanical coupling coefficient of the ultrasonic transducer were all improved compared with the prior art.

本领域的技术人员容易理解,以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。It is easy for those skilled in the art to understand that the above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention, All should be included within the protection scope of the present invention.

Claims (8)

1. a kind of preparation method of high-frequency transducer, it is characterised in that comprise the following steps:
S1. the hearth electrode that height is 4 μm~20 μm is prepared in the upper surface of curved substrate using transfer printing, the curved substrate Upper surface is the annular of 60 °~180 ° of radian;
S2. the lead magnesio-niobate lead titanates thick film that height is 7 μm~100 μm is prepared on hearth electrode using transfer printing;
S3. the gold electrode that height is 100nm~300nm is prepared on the lead magnesio-niobate lead titanates thick film using sputtering method;
S4. using the parallel cutting gold electrode of laser and the lead magnesio-niobate lead titanates thick film, so as to form 16~256 The arc array element be arrangeding in parallel so that the bottom of the arc array element is lead magnesio-niobate lead titanates thick film, and top is gold electrode, and The arc core of the arc array element is located on the central shaft of the curved substrate upper surface;
The high-frequency transducer includes curved substrate and curve focusing array, and the curve focusing array is covered in described All or part of region of the upper surface of curved substrate, the bottom of the curve focusing array are hearth electrode, the hearth electrode it On be provided with 16~256 parallel arc array elements, the arc array element is that lead magnesio-niobate lead titanates is thick by its bottom level Film and its gold electrode at top composition, and the arc core of the arc array element is located on the central shaft of the curved substrate upper surface.
2. preparation method as claimed in claim 1, it is characterised in that the step S2 is specially:
S21., the lead magnesio-niobate lead titanates powder that particle diameter is 200nm~500nm is dispersed in 10%~20% poly- second two In alcoholic solution so that the mass ratio of the lead magnesio-niobate lead titanates powder and the polyglycol solution is 7:3~4:1, obtain Piezoelectricity slurry;
S22. the piezoelectricity slurry is transferred on hearth electrode using transfer printing, the pressure that height is 5 μm~12 μm is formed after drying Electrocoat, and above step is repeated until the Piezoelectric coating is superimposed to required height;
S23.300 DEG C~350 DEG C heating, until the polymer in the Piezoelectric coating is fully thermally decomposed and volatilized;
S24.800 DEG C~1000 DEG C heating make it that the lead magnesio-niobate lead titanates in the Piezoelectric coating is powder sintered.
3. preparation method as claimed in claim 2, it is characterised in that the specific method of the step S22 is, with the song The mould pressure plasma-based material that the pattern of the upper surface of face substrate matches, transfers them to the upper surface of the curved substrate, and 100 DEG C~120 DEG C of heat dryings after to form height be 5 μm~12 μm of Piezoelectric coating, and repeat above step until the piezoelectricity applies Stacking adds to required height.
4. preparation method as claimed in claim 2, it is characterised in that in the step S21, the lead magnesio-niobate lead titanates The mass ratio of powder and the polyglycol solution is 2:1~3:1.
5. preparation method as claimed in claim 2, it is characterised in that the time heated in the step S23 be 30min~ 60min。
6. preparation method as claimed in claim 1, it is characterised in that the material of the curved substrate is piezoelectric ceramics or gold Belong to oxide.
7. preparation method as claimed in claim 1, it is characterised in that the width of the arc array element is 20 μm~60 μm, Away from for 30 μm~70 μm.
8. preparation method as claimed in claim 1, it is characterised in that the material of the hearth electrode is inert metal.
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