CN105591010B - Led芯片、led支架以及led芯片的封装方法 - Google Patents
Led芯片、led支架以及led芯片的封装方法 Download PDFInfo
- Publication number
- CN105591010B CN105591010B CN201410579937.9A CN201410579937A CN105591010B CN 105591010 B CN105591010 B CN 105591010B CN 201410579937 A CN201410579937 A CN 201410579937A CN 105591010 B CN105591010 B CN 105591010B
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- led
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- led chip
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Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 33
- 239000003292 glue Substances 0.000 claims description 38
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 25
- 229910052709 silver Inorganic materials 0.000 claims description 25
- 239000004332 silver Substances 0.000 claims description 25
- 229910000679 solder Inorganic materials 0.000 abstract description 21
- 230000001965 increasing effect Effects 0.000 abstract description 3
- 241000218202 Coptis Species 0.000 description 23
- 235000002991 Coptis groenlandica Nutrition 0.000 description 23
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 238000003466 welding Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 239000000084 colloidal system Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 241001465382 Physalis alkekengi Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Led Device Packages (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410579937.9A CN105591010B (zh) | 2014-10-24 | 2014-10-24 | Led芯片、led支架以及led芯片的封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410579937.9A CN105591010B (zh) | 2014-10-24 | 2014-10-24 | Led芯片、led支架以及led芯片的封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105591010A CN105591010A (zh) | 2016-05-18 |
CN105591010B true CN105591010B (zh) | 2018-12-21 |
Family
ID=55930438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410579937.9A Active CN105591010B (zh) | 2014-10-24 | 2014-10-24 | Led芯片、led支架以及led芯片的封装方法 |
Country Status (1)
Country | Link |
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CN (1) | CN105591010B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108231972B (zh) * | 2016-12-12 | 2020-04-07 | 晶能光电(江西)有限公司 | 一种led芯片封装方法 |
CN108075029B (zh) * | 2017-12-27 | 2019-12-13 | 浙江绿创新拓建筑规划设计有限公司 | 一种节能型照明装置 |
CN110473954A (zh) * | 2018-05-09 | 2019-11-19 | 江西鸿利光电有限公司 | 一种低成本高可靠性的led芯片连接结构 |
CN109473523B (zh) * | 2018-09-29 | 2020-05-19 | 华灿光电(浙江)有限公司 | 一种发光二极管及其封装方法 |
CN112117268B (zh) * | 2020-09-25 | 2023-02-10 | 中科芯(苏州)微电子科技有限公司 | 一种芯片集成模块 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101488546A (zh) * | 2007-10-31 | 2009-07-22 | 夏普株式会社 | 芯片部件式led及其制造方法 |
CN102479907A (zh) * | 2010-11-30 | 2012-05-30 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
CN202888174U (zh) * | 2012-10-12 | 2013-04-17 | 绍兴温家环保新材料有限公司 | 一种led光源模组 |
JP2013179148A (ja) * | 2012-02-28 | 2013-09-09 | Unistar Opto Corp | 発光ダイオードエリアライトモジュールおよびそのパッケージ方法 |
CN104064662A (zh) * | 2013-03-21 | 2014-09-24 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
-
2014
- 2014-10-24 CN CN201410579937.9A patent/CN105591010B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101488546A (zh) * | 2007-10-31 | 2009-07-22 | 夏普株式会社 | 芯片部件式led及其制造方法 |
CN102479907A (zh) * | 2010-11-30 | 2012-05-30 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
JP2013179148A (ja) * | 2012-02-28 | 2013-09-09 | Unistar Opto Corp | 発光ダイオードエリアライトモジュールおよびそのパッケージ方法 |
CN202888174U (zh) * | 2012-10-12 | 2013-04-17 | 绍兴温家环保新材料有限公司 | 一种led光源模组 |
CN104064662A (zh) * | 2013-03-21 | 2014-09-24 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
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Publication number | Publication date |
---|---|
CN105591010A (zh) | 2016-05-18 |
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Effective date of registration: 20191204 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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CP03 | Change of name, title or address | ||
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Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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Effective date of registration: 20200820 Address after: 516083 Longshan 7th Road, Dayawan West District, Huizhou City, Guangdong Province (BYD Co., Ltd. complex building) Patentee after: Guangdong BYD Energy Saving Technology Co.,Ltd. Address before: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee before: BYD Semiconductor Co.,Ltd. |
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Effective date of registration: 20231102 Address after: No. 21 Jili Road, High tech Development Zone, Yangzhou City, Jiangsu Province, 225128 Patentee after: Yangzhou BYD Semiconductor Co.,Ltd. Address before: 516083 Longshan 7th Road, Dayawan West District, Huizhou City, Guangdong Province (complex building of BYD Co., Ltd.) Patentee before: Guangdong BYD Energy Saving Technology Co.,Ltd. |
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Effective date of registration: 20240517 Address after: 516083 Daya Bay West District, Huizhou City, Guangdong Province (Building 7 of Huizhou BYD Battery Co., Ltd.) Patentee after: Guangdong BYD Energy Saving Technology Co.,Ltd. Country or region after: China Address before: No. 21 Jili Road, High tech Development Zone, Yangzhou City, Jiangsu Province, 225128 Patentee before: Yangzhou BYD Semiconductor Co.,Ltd. Country or region before: China |