CN105577126A - Distributed amplifier circuit topological structure for inter-stage matching of graphene transmission line - Google Patents
Distributed amplifier circuit topological structure for inter-stage matching of graphene transmission line Download PDFInfo
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- CN105577126A CN105577126A CN201510938376.1A CN201510938376A CN105577126A CN 105577126 A CN105577126 A CN 105577126A CN 201510938376 A CN201510938376 A CN 201510938376A CN 105577126 A CN105577126 A CN 105577126A
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- graphene
- transmission line
- amplifier
- topological structure
- amplifier circuit
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 103
- 230000005540 biological transmission Effects 0.000 title claims abstract description 30
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 230000000903 blocking effect Effects 0.000 claims description 12
- 239000002184 metal Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- 230000024241 parasitism Effects 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 2
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000010186 staining Methods 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention discloses a distributed amplifier circuit topological structure for inter-stage matching of a graphene transmission line. The distributed amplifier circuit topological structure comprises a first graphene stripe, a second graphene stripe and a plurality of graphene amplifiers, wherein source electrodes of the plurality of graphene amplifiers are grounded; drain electrodes of the plurality of graphene amplifiers are connected with first connection ends on the first graphene stripe respectively; and grid electrodes of the plurality of graphene amplifiers are connected with second connection ends on the second graphene stripe respectively. The distributed amplifier circuit topological structure has the advantages that the inter-stage matching is performed through graphene, and a core part of a circuit can be finished through etching of the graphene, so that a large number of process steps such as metal deposition, etching and metal-graphene contact treatment are omitted; the probability of damage and staining of the graphene in a process is lowered; and the performance of the graphene is ensured better. A transmission line structure is adopted, so that the area is saved. Coupling and parasitism of metal coil inductors do not need to be considered, so that the design difficulty is lowered.
Description
Technical field
The present invention relates to Graphene amplifier application, be specifically related to the distributed amplifier circuit topological structure that a kind of Graphene transmission line makes interstage matched.
Background technology
Adopt multiple inductance capacitance to combine the matching network formed between multiple Graphene amplifiers in correlation technique, specifically there are the following problems: need to carry out the processing step such as deposit, etching and metal and Graphene contact pairs to metal, and processing step is complicated; Easily cause infringement in correlation technique treatment process and stain Graphene; It is larger that the inductance be made up of metal often accounts for area; Need coupling and the parasitism of considering inductance in the circuit of correlation technique, design difficulty is high.
Summary of the invention
The present invention is intended at least one of solve the problems of the technologies described above.
For this reason, the object of the invention is to propose the distributed amplifier circuit topological structure that a kind of Graphene transmission line makes interstage matched.
To achieve these goals, embodiments of the invention disclose the distributed amplifier circuit topological structure that a kind of Graphene transmission line makes interstage matched, comprise: comprising: the first graphene band, the second graphene band and multiple Graphene amplifier, described first graphene band is provided with multiple Graphene amplifier first link, one end of described first graphene band connects drain bias end by drain bias element, and the other end is connected RF signal output by the first coupling inductance with the first DC blocking component successively; Described second graphene band is provided with multiple Graphene amplifier second link, one end of described second graphene band connects radio-frequency (RF) signal input end by the second DC blocking component with the second coupling inductance, and the other end connects gate bias end by gate bias element; The source grounding of described multiple Graphene amplifier, the drain electrode of described multiple Graphene amplifier is connected with described multiple Graphene amplifier first link respectively, and the grid of described multiple Graphene amplifier is connected with described multiple Graphene amplifier second link respectively.
The distributed amplifier circuit topological structure of interstage matched is made according to the Graphene transmission line of the embodiment of the present invention, processing step is relatively simple, Graphene is adopted to carry out interstage matched, only need carry out etching to Graphene the core of just energy completing circuit, eliminate very polymetallic deposit, etching and the processing step such as metal and Graphene contact pairs; Reduce the possibility of infringement and contamination Graphene in technique, ensure the performance of Graphene better.Graphene comparatively easily damages and stains, and adopts Graphene interstage matched, largely avoid the infringement to graphite and contamination; Adopt transmission line structure, save area, it is comparatively large that the inductance be made up of metal often accounts for area, adopts Graphene strip transmission line, can reduce circuit area; Do not need coupling and the parasitism of considering wire coil inductance, reduce design difficulty.If the inductance area that metal is formed is too large, need the coupling parasitism thinking better of its layout and cause, if use strip transmission line, area own is less, and coupling parasitism is also smaller.
In addition, Graphene transmission line according to the above embodiment of the present invention makes the distributed amplifier circuit topological structure of interstage matched, can also have following additional technical characteristic:
Further, described drain bias element is drain bias resistance, and described gate bias element is gate bias resistor.
Further, described first DC blocking component and described second DC blocking component are electric capacity.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the electrical block diagram that the Graphene transmission line of one embodiment of the invention makes the distributed amplifier circuit topological structure of interstage matched;
Fig. 2 is the schematic equivalent circuit that the Graphene transmission line of one embodiment of the invention makes the distributed amplifier circuit topological structure of interstage matched.
Fig. 3 is the Simulation results figure that the Graphene transmission line of one embodiment of the invention makes the distributed amplifier circuit of interstage matched.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end ", " interior ", orientation or the position relationship of the instruction such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance.
In describing the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, concrete condition above-mentioned term concrete meaning in the present invention can be understood.
With reference to description below and accompanying drawing, these and other aspects of embodiments of the invention will be known.Describe at these and in accompanying drawing, specifically disclose some particular implementation in embodiments of the invention, representing some modes of the principle implementing embodiments of the invention, but should be appreciated that the scope of embodiments of the invention is not limited.On the contrary, embodiments of the invention comprise fall into attached claims spirit and intension within the scope of all changes, amendment and equivalent.
The distributed amplifier circuit topological structure making interstage matched according to the Graphene transmission line of the embodiment of the present invention is described below in conjunction with accompanying drawing.
Fig. 1 is the electrical block diagram that the Graphene transmission line of one embodiment of the invention makes the distributed amplifier circuit topological structure of interstage matched.Please refer to Fig. 1, the distributed amplifier circuit topological structure that the Graphene transmission line of the embodiment of the present invention makes interstage matched comprises the first graphene band L1, the second graphene band L2 and multiple Graphene amplifier.In an example of the present invention, have employed the first Graphene amplifier T1, the second Graphene amplifier T2, the 3rd Graphene amplifier T3 and the 4th Graphene amplifier T4.
The left end of the first graphene band L1 is (shown in figure, only convenient in order to describe, not limitation of the present invention) connect drain bias end by drain bias element, right-hand member is by the first coupling inductance L _ out and the first DC blocking component RF signal output.
In one embodiment of the invention, drain bias element is drain bias resistance Rb1, adopts drain bias resistance Rb1 to realize the biased of drain transmission line.
In one embodiment of the invention, the first DC blocking component is electric capacity Cb1, and the direct current adopting electric capacity Cb1 to realize radio-frequency (RF) output end cuts off.
The left end of the second graphene band L2 is (shown in figure, only convenient in order to describe, not limitation of the present invention) be connected radio-frequency (RF) signal input end by the second DC blocking component with second coupling inductance L _ in, right-hand member is connected with gate bias end by gate bias element.
In one embodiment of the invention, the second DC blocking component is electric capacity Cb2, and the direct current adopting electric capacity Cb2 to realize radio-frequency (RF) output end cuts off.
In one embodiment of the invention, gate bias element is gate bias resistor Rb2, adopts gate bias resistor Rb2 to realize the biased of gate transmission line.
The source electrode ground connection respectively of the first Graphene amplifier T1, the second Graphene amplifier T2, the 3rd Graphene amplifier T3 and the 4th Graphene amplifier T4, drain electrode is connected with Graphene amplifier first link on the first graphene band L1 respectively, and grid respectively Graphene amplifier second link put with the second Graphene on band L2 is connected.
The Graphene transmission line of the embodiment of the present invention makes the equivalent circuit diagram of the distributed amplifier circuit topological structure of interstage matched as shown in Figure 2, according to Graphene high frequency characteristics model, and do certain simplification, above schematic diagram can be equivalent to following circuit diagram: wherein Lg, Ld is Graphene kinetic energy inductance, and Rg, Rd are Graphene resistance, Cg, Cd are Graphene equivalence direct-to-ground capacitance.
Carry out l-G simulation test by the distributed amplifier circuit topological structure Graphene transmission line of the embodiment of the present invention being made to interstage matched, specific experiment data are as follows:
| L_in(nH) | Lg(pH) | Cg(fF) | Rg(Ohm) | L_out(nH) | Ld(pH) | Cd(fF) | Rd(Ohm) | Rb(Ohm) | Cb(uF) | |
| Value | 74 | 180 | 2 | 45 | 0.35 | 100 | 1 | 25 | 50k | 1 |
Wherein, nH: nanohenry profit, 10
-9henry, pH: skin Henry, 10
-12henry, fF: Flying Farah, 10
-15farad, uF: microfarad, 10
-6farad, Ohm: ohm.The result of emulation experiment as shown in Figure 3.
The distributed amplifier circuit topological structure that the Graphene transmission line of the embodiment of the present invention makes interstage matched has following beneficial effect: 1. processing step is relatively simple.Adopt Graphene to carry out interstage matched, only need carry out etching to Graphene the core of just energy completing circuit, eliminate very polymetallic deposit, etching and the processing step such as metal and Graphene contact pairs.2. reduce the possibility of infringement and contamination Graphene in technique, ensure the performance of Graphene better.Graphene comparatively easily damages and stains, and adopts Graphene interstage matched, and processing step is simple, largely avoid the infringement to graphite and contamination.3. adopt transmission line structure, save area.It is comparatively large that the inductance be made up of metal often accounts for area, adopts Graphene strip transmission line, can reduce circuit area.4. do not need coupling and the parasitism of considering wire coil inductance, reduce design difficulty.If the inductance area that metal is formed is too large, need the coupling parasitism thinking better of its layout and cause, if use strip transmission line, area own is less, and coupling parasitism is also smaller.
In addition, the Graphene transmission line of the embodiment of the present invention make the distributed amplifier circuit topological structure of interstage matched other to form and effect is all known for a person skilled in the art, in order to reduce redundancy, do not repeat.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present invention and aim, scope of the present invention is by claim and equivalency thereof.
Claims (3)
1. Graphene transmission line makes a distributed amplifier circuit topological structure for interstage matched, it is characterized in that, comprising: the first graphene band, the second graphene band and multiple Graphene amplifier,
Described first graphene band is provided with multiple Graphene amplifier first link, one end of described first graphene band connects drain bias end by drain bias element, and the other end is connected RF signal output by the first coupling inductance with the first DC blocking component successively;
Described second graphene band is provided with multiple Graphene amplifier second link, one end of described second graphene band connects radio-frequency (RF) signal input end by the second DC blocking component with the second coupling inductance, and the other end connects gate bias end by gate bias element;
The source grounding of described multiple Graphene amplifier, the drain electrode of described multiple Graphene amplifier is connected with described multiple Graphene amplifier first link respectively, and the grid of described multiple Graphene amplifier is connected with described multiple Graphene amplifier second link respectively.
2. Graphene transmission line according to claim 1 makes the distributed amplifier circuit topological structure of interstage matched, it is characterized in that, described drain bias element is drain bias resistance, and described gate bias element is gate bias resistor.
3. Graphene transmission line according to claim 1 makes the distributed amplifier circuit topological structure of interstage matched, it is characterized in that, described first DC blocking component and described second DC blocking component are electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510938376.1A CN105577126B (en) | 2015-12-15 | 2015-12-15 | Graphene transmission line makees the distributed amplifier circuit topological structure of interstage matched |
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| CN201510938376.1A CN105577126B (en) | 2015-12-15 | 2015-12-15 | Graphene transmission line makees the distributed amplifier circuit topological structure of interstage matched |
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| CN105577126A true CN105577126A (en) | 2016-05-11 |
| CN105577126B CN105577126B (en) | 2019-07-02 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030128057A1 (en) * | 2002-01-04 | 2003-07-10 | Alcatel | Line interface circuit, associated line drivers and methods of operating the same |
| CN102642827A (en) * | 2012-04-16 | 2012-08-22 | 清华大学 | Method for preparing graphene pipe and graphene band |
| CN103077968A (en) * | 2013-01-04 | 2013-05-01 | 南京邮电大学 | Graphene nanoribbon field-effect tube (GNRFET) with asymmetric HALO-lightly-doped drain (HALO-LDD) structure |
| CN103227204A (en) * | 2013-04-01 | 2013-07-31 | 南京邮电大学 | Halo-doped bi-material heterogeneous gate graphene strip field effect transistor |
| CN103595357A (en) * | 2013-10-17 | 2014-02-19 | 天津大学 | 0.1-1.2GHz CMOS (complementary metal oxide semiconductor) ultra-wideband radiofrequency power amplifier |
| CN104091829A (en) * | 2014-07-14 | 2014-10-08 | 南京邮电大学 | Bilinear doping drainage heterogeneous material gate oxide layer graphene tunneling field-effect transistor |
| CN104617892A (en) * | 2015-02-26 | 2015-05-13 | 清华大学 | Graphene distributed amplifier |
-
2015
- 2015-12-15 CN CN201510938376.1A patent/CN105577126B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030128057A1 (en) * | 2002-01-04 | 2003-07-10 | Alcatel | Line interface circuit, associated line drivers and methods of operating the same |
| CN102642827A (en) * | 2012-04-16 | 2012-08-22 | 清华大学 | Method for preparing graphene pipe and graphene band |
| CN103077968A (en) * | 2013-01-04 | 2013-05-01 | 南京邮电大学 | Graphene nanoribbon field-effect tube (GNRFET) with asymmetric HALO-lightly-doped drain (HALO-LDD) structure |
| CN103227204A (en) * | 2013-04-01 | 2013-07-31 | 南京邮电大学 | Halo-doped bi-material heterogeneous gate graphene strip field effect transistor |
| CN103595357A (en) * | 2013-10-17 | 2014-02-19 | 天津大学 | 0.1-1.2GHz CMOS (complementary metal oxide semiconductor) ultra-wideband radiofrequency power amplifier |
| CN104091829A (en) * | 2014-07-14 | 2014-10-08 | 南京邮电大学 | Bilinear doping drainage heterogeneous material gate oxide layer graphene tunneling field-effect transistor |
| CN104617892A (en) * | 2015-02-26 | 2015-05-13 | 清华大学 | Graphene distributed amplifier |
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Granted publication date: 20190702 Termination date: 20191215 |