CN105575829A - Method of increasing bonding capability between welding pad and metal wire ball and structure thereof - Google Patents
Method of increasing bonding capability between welding pad and metal wire ball and structure thereof Download PDFInfo
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- CN105575829A CN105575829A CN201410549390.8A CN201410549390A CN105575829A CN 105575829 A CN105575829 A CN 105575829A CN 201410549390 A CN201410549390 A CN 201410549390A CN 105575829 A CN105575829 A CN 105575829A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0501—Shape
- H01L2224/05016—Shape in side view
- H01L2224/05018—Shape in side view being a conformal layer on a patterned surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Wire Bonding (AREA)
Abstract
The invention provide a method of increasing a bonding capability between a welding pad and a metal wire ball and a structure thereof. The method at least comprises the following steps of providing a wafer provided with top metal; successively depositing a barrier layer on the top metal and a first passivation layer covering the barrier layer; etching the first passivation layer till that the barrier layer is exposed and forming several concentric annular grooves; removing the barrier layer in the grooves; successively depositing a viscidity film and a metal layer on a first passivation layer surface and in the grooves and forming a metal welding pad possessing a concavo-convex surface; depositing a second passivation layer on the metal welding pad, then etching the second passivation layer till that the metal welding pad of the concavo-convex surface is exposed and forming at least one welding area; and welding the metal wire ball in the welding area. By using the method, the concavo-convex surface is formed on the metal welding pad; and under an effect of the concavo-convex surface of the metal welding pad, the metal wire ball is tightly grasped so that the bonding capability between the metal wire ball and the metal welding pad is increased under the condition that production cost is not increased.
Description
Technical field
The present invention relates to a kind of chip fabrication technique, particularly relate to a kind of method and the structure that improve binding ability between weld pad and metal thread ball.
Background technology
Along with the development of semiconductor technology, the characteristic size especially developing into chip is less than or equal to the stage of 45nm, and require also more and more lower to the K value of dielectric substance, and dielectric substance k value is lower, dielectric material is more loose and fragility is stronger.
Simultaneously in order to reduce production cost, sealing wire is converted to copper cash from gold thread by increasing encapsulation factory.And the binding ability of copper cash ball and aluminium welding pad is more than gold thread spherical aberration, larger bonding dynamics is so just needed to go the fusion realizing copper cash and aluminium welding pad.But large bonding force is easy to destroy the dielectric layer in chip metal layer.The problem being just easy to that dielectric layer is held and can't stand large bonding dynamics and wreck during the product utilization copper cash bonding of therefore advanced process.
For the problems referred to above, current a kind of solution is as resilient coating using the passivation layer on the top-level metallic surface of chip, then on this passivation layer, annular groove is etched, plated metal aluminium welding pad in the trench afterwards, the sidewall of such passivation layer and surface all contact by metallic aluminium weld pad, add the contact area of metallic aluminium and passivation layer, increase the adhesiveness of metallic aluminium and top-level metallic with this.
As shown in Figure 1, the schematic top plan view of aluminum annular-shaped weld pad of the prior art is shown as.Open channels 02 around passivation layer 01, depositing adhesive film and metallic aluminium in passivation layer surface and groove afterwards, finally draw copper cash at the upper surface of metallic aluminium, in Fig. 1, do not provide in order to clear display groove 02 structural representation including adhesive membrane and metallic aluminium.Fig. 2 is shown as Fig. 1 along AA
1the generalized section in direction, wherein the upper surface of top-level metallic 03 does not have the area deposition of groove 02 to have barrier layer 04; The area deposition adhesive membrane 05 of groove 02 is had at the upper surface of described passivation layer 01, sidewall and top-level metallic upper surface; Then at the upper surface depositing metal layers 06 (metallic aluminium) of adhesive membrane as aluminium welding pad.
Under normal circumstances, described adhesive membrane is TaN, adhesive power between TaN and the passivation layer of its lower floor is very poor, simultaneously catch aluminium because the bonding force between the metallic aluminium weld pad of prior art and described passivation layer only leans against plated metal aluminium in an annular groove to make passivation layer, in this case the lamination between metallic aluminium and passivation layer is serious, cause easy layering between aluminium welding pad and metal thread ball further, thus make the packaging effect of product bad and make product failure.
Therefore, be necessary to propose a kind of new method and structure to improve the binding ability between aluminium welding pad and metal thread ball.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of method and the structure that improve binding ability between weld pad and metal thread ball, producing lamination due to adhesive power difference between adhesive membrane and passivation layer thus the problem causing product failure for solving in prior art.
For achieving the above object and other relevant objects, the invention provides a kind of method improving binding ability between weld pad and metal thread ball, the method at least comprises the following steps: the wafer that (1) provides to be provided with top-level metallic; (2) deposited barrier layer and cover first passivation layer on described barrier layer successively on described top-level metallic; (3) etch described first passivation layer to exposing described barrier layer, form the groove of some concentric annular; (4) barrier layer in described groove is removed; (5) depositing adhesive film and metal level successively in described first passivation layer surface and described groove, forms the metal pad with convex-concave surface; (6) on described metal pad, the second passivation layer is deposited; (7) etch described second passivation layer till the metal pad exposing convex-concave surface, form at least one welding zone; (8) at described welding zone weld metal thread ball.
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, the groove of the concentric annular in described step (3) comprises straight-flanked ring groove or circular rings groove.
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, described straight-flanked ring groove adjacent in described concentric annular ditch groove or circular rings groove spacing each other equal.
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, in described step (7), each welding zone at least comprises 2 described grooves.
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, the barrier layer in described step (2) is silicon nitride layer.
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, first, second passivation layer described is silicon oxide layer; The method depositing described silicon oxide layer is chemical vapour deposition technique.
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, the method for etching first, second passivation layer described is dry etching.
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, in described step (5), adhesive membrane is material is TaN; The material of described metal level is aluminium.
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, in described step (5), the method for the described metal level of deposition is physical vapour deposition (PVD).
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, in described step (8), the method for weld metal thread ball is thermal compression welding; Described metal thread ball is aluminum steel ball.
The present invention also provides a kind of structure improving binding ability between weld pad and metal thread ball, and this structure at least comprises: top-level metallic and the first passivation layer being positioned at the some concentric annular above this top-level metallic; Barrier layer is provided with between described top-level metallic and described first passivation layer; In the adjacent annular ditch groove formed each other of described first passivation layer and described first passivation layer surface be provided with adhesive membrane and be positioned at metal level on described adhesive membrane; Described metal level upper surface is convex-concave surface; Be formed at the second passivation layer on described metal level; Described second passivation layer is provided with the welding zone penetrating this second passivation layer; The metal thread ball contacted with described metal level is welded with in described welding zone.
As mentioned above, fusible method between raising weld pad of the present invention and metal wire and structure, there is following beneficial effect: on metal pad, form convex-concave surface, under the effect of the convex-concave surface of described metal pad, metal thread ball is tightly held, and the basis of not improving production cost is improved the binding ability between metal thread ball and metal pad.
Accompanying drawing explanation
Fig. 1 is the schematic top plan view of aluminum annular-shaped weld pad of the prior art.
Fig. 2 is that Fig. 1 is along AA
1the generalized section in direction.
Fig. 3 is the structural representation of barrier layer and the first passivation layer formed on top-level metallic in step 2 of the present invention.
Fig. 4 is the generalized section forming groove in step 3 of the present invention over the barrier layer.
Fig. 5 is the structural representation after removing the barrier layer in groove in step 4 of the present invention.
Fig. 6 is the structural representation in step 5 of the present invention after groove and the first passivation layer surface depositing adhesive film.
Fig. 7 is the structural representation forming metal pad in step 5 of the present invention on adhesive membrane after depositing metal layers.
Fig. 8 is the structural representation forming the second passivation layer in step 6 of the present invention on metal pad.
Fig. 9 is the structural representation forming welding zone in step 7 of the present invention on the second passivation layer.
Figure 10 is the structural representation in step 8 of the present invention after welding zone weld metal thread ball.
Element numbers explanation
01 first passivation layer
02 groove
03 top-level metallic
04 barrier layer
05 adhesive membrane
06 metal level
07 second passivation layer
08 welding zone
09 metal thread ball
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 3 to Figure 10.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Between described raising weld pad of the present invention and metal thread ball, the method step of binding ability is: first implementation step (1): provide the wafer that is provided with top-level metallic; In the back segment process of chip manufacturing, wafer can form the top-level metallic of metal interconnect structure, interconnecting metal generally has six layers of metal, and top-level metallic is generally layer 6 metal.Preferably, the top-level metallic material in the present invention is copper.
Then implementation step (2): in Fig. 3, deposited barrier layer 04 and cover first passivation layer 01 on described barrier layer 04 successively on described top-level metallic 03; Preferably, the material on described barrier layer 04 is silicon nitride layer.The material of described first passivation layer 01 is oxide skin(coating), and further, described oxide skin(coating) is silicon oxide layer; The stress that the effect of described first passivation layer 01 produces when being and playing buffering bond pads and metal thread ball is to the destruction of the interlayer dielectric layer of low k.The effect on described barrier layer avoids injuring top-level metallic when etching described first passivation layer.Further preferably, the method depositing described oxide skin(coating) or the first passivation layer in the present invention is chemical vapour deposition technique.Fig. 3 is shown as the structural representation of barrier layer 04 and the first passivation layer formed on top-level metallic in step 2 of the present invention.
Then implementation step (3): etch described first passivation layer 01 to exposing described barrier layer 04, form the groove 02 of some concentric annular; As shown in Figure 4, Fig. 4 is the generalized section forming groove in step 3 of the present invention on described barrier layer 04.Preferably, the method of dry etching is adopted to etch described first passivation layer till the upper surface exposing described barrier layer 04 in the present invention, and at the profile that the part that the groove 02, Fig. 4 that the upper surface on described barrier layer defines some concentric rings each other is only shown as this concentric ring is formed.The shape of the groove 02 of described concentric annular can be rectangle, also can be circle etc.Preferably, in the present invention, the groove 02 of described concentric annular is straight-flanked ring groove or circular rings groove.In order to make the binding ability between described weld pad and metal thread ball and between weld pad and the first passivation layer, preferably, in described concentric annular ditch groove 02 adjacent described straight-flanked ring groove or circular rings groove spacing each other equal.That is described groove is uniformly distributed.
Then implementation step (4): remove the barrier layer 04 in described groove 02; Define the groove exposing described top-level metallic upper surface as shown in Figure 5, Fig. 5 is the structural representation after removing the barrier layer 04 in groove 02 in step 4 of the present invention.In this step, part only between described first passivation layer and described top-level metallic leaves barrier layer, and in the groove not having passivation layer, there is no barrier layer, the object removing the barrier layer in groove is, when filling metal in subsequent step in the trench, avoid because barrier layer can not be conducted electricity isolating between metal and described top-level metallic.Therefore, the barrier layer in described groove must be removed.
Then implementation step (5): depositing adhesive film 05 and metal level 06 successively in described first passivation layer 01 surface and described groove 02, form the metal pad with convex-concave surface; Fig. 6 is the structural representation in step 5 of the present invention after groove 02 and the first passivation layer 01 surface deposition adhesive membrane 05.Preferably, the method depositing described adhesive membrane is physical vaporous deposition, and further preferably, described physical vaporous deposition is plasma sputter deposition.Under normal circumstances, the adhesive membrane of described plasma sputtering method deposition can be deposited on to non-selectivity the sidewall of (surface of described top-level metallic) and described first passivation layer in the surface of described first passivation layer, described groove, Fig. 6 just schematically identifies the position that described adhesive membrane deposits, do not provide the sidewall toughness film of described passivation layer, and in actual process, describedly all deposit adhesive membrane in described passivation layer surface and sidewall.But the principle different with side wall deposition probability on surface according to the ion of plasma sputter deposition method, described passivation layer surface is substantially identical with the thickness of the adhesive membrane deposited in described groove, and the thickness of the adhesive membrane of described passivation layer side wall deposition and described passivation layer surface are not identical with the thickness of the adhesive membrane deposited in groove, and the adhesive membrane of described passivation layer side wall deposition is uneven, be greater than the thickness of its sidewall upper position (close to channel bottom) at the thickness of the described adhesive membrane of described passivation layer sidewall position deposition by the top simultaneously.
As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, described adhesive membrane 05 for material be TaN; The existence of TaN makes described first passivation layer and subsequent deposition reach good bonding between the metal level of this adhesive membrane upper surface.If do not have adhesive membrane, can not reach bonding between described passivation layer and metal level, that is not have the ability of mutual bonding between described first passivation layer and described metal level, therefore, the existence of described adhesive membrane is necessary.
In described first passivation layer surface, groove and after adhesive membrane described in described first passivation layer side wall deposition, form the continuity adhesive membrane covering this three's upper surface; Then, at the upper surface depositing metal layers 06 of formed adhesive membrane, as shown in Figure 7, Fig. 7 is the structural representation forming metal pad in step 5 of the present invention on adhesive membrane 05 after depositing metal layers 06.As a kind of preferred version of the method for binding ability between raising weld pad of the present invention and metal thread ball, the material of described metal level 06 is aluminium.
Further preferably, the method depositing described metal level 06 is physical vapour deposition (PVD), and in the present embodiment, the method depositing described metal level 06 is the plasma sputter deposition technique in physical vapour deposition (PVD).Described adhesive membrane is except playing the effect of passivation layer described in bonding and described metal level, and described adhesive membrane also also plays the described metal level of isolation and passivation layer in this scenario; Why need between described passivation layer and described metal level to isolate is because in the process adopting metal level described in plasma sputter deposition, due to isoionic penetration, if there is no described adhesive membrane, plasma cognition penetrates in described passivation layer, define mixing between metal with passivation layer and described aluminum metal layer can directly contact with the top-level metallic exposed in described groove, generally, top-level metallic is that process for copper is formed, copper can diffuse in the middle of metallic aluminium, causes the reliability of device to go wrong.Therefore, the existence of described adhesive membrane is necessary.
Then implementation step (6): at upper deposition second passivation layer of described metal pad (metal level 06).Fig. 8 is the structural representation forming the second passivation layer 07 in step 6 of the present invention on metal pad.Preferably, the material of the second passivation layer 07 and the first passivation layer 01 is all silica, and the method depositing described second passivation layer 07 is chemical vapour deposition technique.The effect of described second passivation layer is the Rotating fields in order to provide etching welding zone in subsequent technique; also be in order to other metal layer region in guard metal layer except exposing welding zone; other metal layer region can be covered by described second passivation layer; keep away from moisture, and can the anti-external interference such as antistatic.
Then implementation step (7): etch described second passivation layer 07 till the metal pad (metal level 06) exposing convex-concave surface, form at least one welding zone; As shown in Figure 9, what Fig. 9 represented is the structural representation forming welding zone 08 in step 7 of the present invention on the second passivation layer 07.Preferably, the method forming described first passivation layer of etching in the Methods and steps (3) of described welding zone 08 in this step on described second passivation layer is identical, is all dry etching.
The described welding zone formed in this step is for exposing the region of metal pad (a part of upper surface of metal level 06), upper surface due to described metal level is the surface of convex-concave, that is the surface of described metal pad is convex-concave surface, described convex-concave surface is formed by groove and metallic aluminium interval.Therefore, in the present invention preferably, described welding zone at least comprises 2 grooves.As shown in Figure 9, formed at least 2 grooves can make the follow-up metal thread ball being welded on metal thread ball on metal level described in described welding zone and convex-concave surface can under the effect of convex-concave surface can bonding firm.
The number of welding zone described in the present invention can need the number of interface to make according to actual product, and generally, in actual production, product interface does not only have one, and therefore, in the present invention preferably, the number of described welding zone is at least one.
Then implementation step (8): at described welding zone weld metal thread ball.As shown in Figure 10, the structural representation that what Figure 10 represented is in the present invention after welding zone weld metal thread ball.After the welding zone 08 that the formation etching described second passivation layer 07 communicates with described metal level, last one packaging process is given encapsulation factory and is completed by chip manufacturing factory, namely described welding zone 08 is welded, form the metal thread ball 09 filling up this welding zone as shown in Figure 10, because described welding zone to be filled up by metal thread ball and metal level outside welding zone is also isolated by described second passivation layer, therefore, described metal level 06 (metal pad) is then isolated with extraneous formation completely, therefore can not form leaky.In the present invention, preferably, the material of described metal thread ball is metallic copper thread ball, belongs to the bonding between copper-aluminium.And in actual production, the bonding between copper and aluminium can not reach good bonding effect owing to not forming convex-concave structure on the surface of described aluminium welding pad, and instant invention overcomes this difficulty.
Further preferably, the method for weld metal thread ball 09 is thermal compression welding.So-called thermal compression welding is exactly utilize heating and plus-pressure that the aluminium welding pad in copper lines and welding zone is bonded together.In the condition of thermal compression welding, two kinds of metal surfaces need tightly to contact, and control weld time, welding temperature and welding pressure simultaneously and make two kinds of metals form bonding.Wherein, welding pressure such as figure can make too greatly the interlayer dielectric layer between interconnecting metal (being generally the medium of low k) rupture.Therefore, the welding pressure in welding condition needs suitably, could to make product failure.Preferably, in the present invention, welding temperature is 300 ~ 400 DEG C, is about 40 milliseconds weld time.
The present invention also provides a kind of structure improving binding ability between weld pad and metal thread ball: as shown in Figure 10, this structure at least comprises: top-level metallic 03, this top-level metallic 03 is formed by copper wiring, is generally the metal structure of the most top layer of the interconnecting metal be arranged on wafer.This structure also comprises, and is positioned at the first passivation layer 01 of the some concentric annular on described top-level metallic 03; Described first passivation layer forms concentric ring structure, is spaced between described concentric ring, and spaced region forms groove; As shown in Figure 10, between described top-level metallic 03 and described first passivation layer 01, barrier layer 04 is provided with; And in described groove, there is no barrier layer; This structure also comprises: in the adjacent annular ditch groove formed each other of described first passivation layer 01 and described first passivation layer surface be provided with adhesive membrane 05 and be positioned at the metal level 06 on described adhesive membrane; Namely the described top-level metallic in the upper surface of described first passivation layer and described groove is all provided with adhesive membrane on the surface; As shown in Figure 10, the upper surface of described metal level 06 is convex-concave surface; Be formed at the second passivation layer 07 on described metal level 06; Described second passivation layer 07 is provided with the welding zone penetrating this second passivation layer, and the metal level upper surface that namely described welding zone exposes a part of described convex-concave surface by described second passivation layer of removal is formed; The metal thread ball 09 contacted with described metal level is welded with in described welding zone.
In sum, the present invention forms convex-concave surface on metal pad, under the effect of the convex-concave surface of described metal pad, metal thread ball is tightly held, simultaneously because the first passivation layer is concentric annular structure, therefore, the first passivation layer and metal level also can firmly be bonded together, to make the binding ability improved on the basis of not improving production cost between metal thread ball and metal pad.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (11)
1. improve a method for binding ability between weld pad and metal thread ball, it is characterized in that, the method at least comprises the following steps:
(1) wafer that is provided with top-level metallic is provided;
(2) deposited barrier layer and cover first passivation layer on described barrier layer successively on described top-level metallic;
(3) etch described first passivation layer to exposing described barrier layer, form the groove of some concentric annular;
(4) barrier layer in described groove is removed;
(5) depositing adhesive film and metal level successively in described first passivation layer surface and described groove, forms the metal pad with convex-concave surface;
(6) on described metal pad, the second passivation layer is deposited;
(7) etch described second passivation layer till the metal pad exposing convex-concave surface, form at least one welding zone;
(8) at described welding zone weld metal thread ball.
2. the method for binding ability between raising weld pad according to claim 1 and metal thread ball, is characterized in that: the groove of the concentric annular in described step (3) comprises straight-flanked ring groove or circular rings groove.
3. the method for binding ability between raising weld pad according to claim 2 and metal thread ball, is characterized in that: described straight-flanked ring groove adjacent in described concentric annular groove or circular rings groove spacing each other equal.
4. the method for binding ability between raising weld pad according to claim 1 and metal thread ball, is characterized in that: in described step (7), each welding zone at least comprises 2 described grooves.
5. the method for binding ability between raising weld pad according to claim 1 and metal thread ball, is characterized in that: the barrier layer in described step (2) is silicon nitride layer.
6. the method for binding ability between raising weld pad according to claim 1 and metal thread ball, is characterized in that: first, second passivation layer described is silicon oxide layer; The method depositing described silicon oxide layer is chemical vapour deposition technique.
7. the method for binding ability between raising weld pad according to claim 1 and metal thread ball, is characterized in that: the method for etching first, second passivation layer described is dry etching.
8. the method for binding ability between raising weld pad according to claim 1 and metal thread ball, is characterized in that: in described step (5), adhesive membrane is material is TaN; The material of described metal level is aluminium.
9. the method for binding ability between raising weld pad according to claim 1 and metal thread ball, is characterized in that: in described step (5), the method for the described metal level of deposition is physical vapour deposition (PVD).
10. the method for binding ability between raising weld pad according to claim 1 and metal thread ball, is characterized in that: in described step (8), the method for weld metal thread ball is thermal compression welding; Described metal thread ball is aluminum steel ball.
11. 1 kinds of structures improving binding ability between weld pad and metal thread ball, is characterized in that: this structure at least comprises:
Top-level metallic and the first passivation layer being positioned at the some concentric annular above this top-level metallic;
Barrier layer is provided with between described top-level metallic and described first passivation layer;
In the adjacent annular ditch groove formed each other of described first passivation layer and described first passivation layer surface be provided with adhesive membrane and be positioned at metal level on described adhesive membrane; Described metal level upper surface is convex-concave surface;
Be formed at the second passivation layer on described metal level; Described second passivation layer is provided with the welding zone penetrating this second passivation layer; The metal thread ball contacted with described metal level is welded with in described welding zone.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410549390.8A CN105575829A (en) | 2014-10-16 | 2014-10-16 | Method of increasing bonding capability between welding pad and metal wire ball and structure thereof |
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| CN201410549390.8A CN105575829A (en) | 2014-10-16 | 2014-10-16 | Method of increasing bonding capability between welding pad and metal wire ball and structure thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN110223922A (en) * | 2019-06-10 | 2019-09-10 | 武汉新芯集成电路制造有限公司 | A kind of crystal circle structure and its manufacturing method, chip structure |
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| CN110223922A (en) * | 2019-06-10 | 2019-09-10 | 武汉新芯集成电路制造有限公司 | A kind of crystal circle structure and its manufacturing method, chip structure |
| US11164834B2 (en) | 2019-06-10 | 2021-11-02 | Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. | Wafer structure and method for manufacturing the same, and chip structure |
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