CN105481889B - The production method of response type vertical orientation organosilicon material and liquid crystal display panel - Google Patents
The production method of response type vertical orientation organosilicon material and liquid crystal display panel Download PDFInfo
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- CN105481889B CN105481889B CN201510797130.7A CN201510797130A CN105481889B CN 105481889 B CN105481889 B CN 105481889B CN 201510797130 A CN201510797130 A CN 201510797130A CN 105481889 B CN105481889 B CN 105481889B
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 113
- 239000000463 material Substances 0.000 title claims abstract description 68
- 230000004044 response Effects 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 125000001309 chloro group Chemical group Cl* 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 20
- 239000003292 glue Substances 0.000 claims description 14
- 239000000178 monomer Substances 0.000 claims description 14
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 5
- 238000005286 illumination Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000009257 reactivity Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 abstract description 14
- 238000004873 anchoring Methods 0.000 abstract description 7
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 125000001153 fluoro group Chemical group F* 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 5
- 230000003993 interaction Effects 0.000 abstract description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract description 5
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 abstract 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 abstract 1
- 239000004642 Polyimide Substances 0.000 description 19
- 229920001721 polyimide Polymers 0.000 description 19
- 239000010408 film Substances 0.000 description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 12
- 150000004982 aromatic amines Chemical class 0.000 description 10
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 9
- -1 phenyl grignard reagent Chemical class 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 6
- 239000005052 trichlorosilane Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000007818 Grignard reagent Substances 0.000 description 4
- 238000005481 NMR spectroscopy Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 229940126214 compound 3 Drugs 0.000 description 4
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910010084 LiAlH4 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012280 lithium aluminium hydride Substances 0.000 description 3
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006757 chemical reactions by type Methods 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- RGOVYLWUIBMPGK-UHFFFAOYSA-N nonivamide Chemical compound CCCCCCCCC(=O)NCC1=CC=C(O)C(OC)=C1 RGOVYLWUIBMPGK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K19/00—Liquid crystal materials
- C09K19/52—Liquid crystal materials characterised by components which are not liquid crystals, e.g. additives with special physical aspect: solvents, solid particles
- C09K19/54—Additives having no specific mesophase characterised by their chemical composition
- C09K19/56—Aligning agents
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
- C07F7/121—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20
- C07F7/122—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20 by reactions involving the formation of Si-C linkages
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- C—CHEMISTRY; METALLURGY
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K19/00—Liquid crystal materials
- C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
- C09K19/06—Non-steroidal liquid crystal compounds
- C09K19/32—Non-steroidal liquid crystal compounds containing condensed ring systems, i.e. fused, bridged or spiro ring systems
- C09K19/322—Compounds containing a naphthalene ring or a completely or partially hydrogenated naphthalene ring
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- C09K19/00—Liquid crystal materials
- C09K19/52—Liquid crystal materials characterised by components which are not liquid crystals, e.g. additives with special physical aspect: solvents, solid particles
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
- G02F1/133719—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films with coupling agent molecules, e.g. silane
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- C09K19/00—Liquid crystal materials
- C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
- C09K2019/0444—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit characterized by a linking chain between rings or ring systems, a bridging chain between extensive mesogenic moieties or an end chain group
- C09K2019/0448—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit characterized by a linking chain between rings or ring systems, a bridging chain between extensive mesogenic moieties or an end chain group the end chain group being a polymerizable end group, e.g. -Sp-P or acrylate
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- C09K19/00—Liquid crystal materials
- C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
- C09K19/06—Non-steroidal liquid crystal compounds
- C09K19/08—Non-steroidal liquid crystal compounds containing at least two non-condensed rings
- C09K19/10—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings
- C09K19/12—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings at least two benzene rings directly linked, e.g. biphenyls
- C09K2019/121—Compounds containing phenylene-1,4-diyl (-Ph-)
- C09K2019/122—Ph-Ph
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/02—Alignment layer characterised by chemical composition
- C09K2323/023—Organic silicon compound, e.g. organosilicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
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- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Liquid Crystal (AREA)
- Silicon Polymers (AREA)
Abstract
The general structure of the production method that the present invention provides a kind of response type vertical orientation organosilicon material and liquid crystal display panel, the response type vertical orientation organosilicon material is A R, wherein A refers to SiCl3；R refers to some CH in the alkyl of the linear chain or branched chain with 5~20 C atoms, the alkyl2The group that group is replaced by some H atom in phenyl, naphthenic base, CONH, COO, O CO, CO or CH=CH group replaced or the alkyl by F or Cl atoms.In the substrate surface of no PI films, which relies primarily on the interaction of hydrogen bond between the Cl atoms of itself and the OH of substrate surface, to achieve the purpose that so that liquid crystal molecule is arranged vertically；When heating, the Si Cl in the organosilicon material can be chemically reacted with the OH of substrate surface, form Si O keys, substrate surface is anchored in a manner of chemical bond, can further improve the stability of anchoring liquid crystal molecule.
Description
Technical field
The present invention relates to display technology field more particularly to a kind of response type vertical orientation organosilicon material and liquid crystal displays
The production method of panel.
Background technology
With the development of display technology, the planes such as liquid crystal display (Liquid Crystal Display, LCD) display dress
It sets because having many advantages, such as that high image quality, power saving, fuselage is thin and has a wide range of application, and is widely used in mobile phone, TV, a number
The various consumer electrical products such as word assistant, digital camera, laptop, desktop computer, become the master in display device
Stream.
Liquid crystal display device on existing market is largely backlight liquid crystal display comprising liquid crystal display panel and
Backlight module (backlight module).The operation principle of liquid crystal display panel is put in the parallel glass substrate of two panels
Liquid crystal molecule is set, there are many tiny electric wires vertically and horizontally for two panels glass substrate centre, and liquid crystal is controlled whether by being powered
The light refraction of backlight module is out generated picture by molecular changes direction.
Usual liquid crystal display panel is by color film (CF, Color Filter) substrate, thin film transistor (TFT) (TFT, Thin Film
Transistor) substrate, the liquid crystal (LC, Liquid Crystal) that is sandwiched between color membrane substrates and thin film transistor base plate and close
Sealing frame (Sealant) forms.
On the CF substrates and TFT substrate of liquid crystal display, it is to make liquid crystal to have thin film material layer, main function respectively
Molecule arranges in certain direction, and we term it alignment film (common polyimides (PI) materials).This phase matching film it is main at
Be divided into friction matching type PI materials or light alignment-type PI materials, still, no matter that alignment materials can all have the shortcomings that it is respective.It is first
First friction matching type PI materials be easy to cause the problems such as dust particles, electrostatic residual, brush mark, to reduce process yields, and light
Although alignment-type PI materials can be to avoid these problems, since material property is limited, heat resistance and resistance to ag(e)ing are bad, simultaneously
The ability for being anchored LC molecules is also weaker, to influence the quality of panel；Secondly, PI materials inherently have highly polar and high water absorption
Property, storage and transport be easy to cause rotten and cause orientation uneven, and PI material prices are expensive, form a film on TFT-LCD
Technique is also complex, and panel cost is caused to improve.So in TFT-LCD, if it is possible in the case where saving PI films, also
It can make Liquid Crystal Molecules Alignment, this will substantially reduce the cost of production panel.
Invention content
The purpose of the present invention is to provide a kind of response type vertical orientation organosilicon material, in the substrate surface of no PI films,
The interaction of hydrogen bond between the Cl atoms of itself the and-OH of substrate surface can be relied on, to reach so that liquid crystal molecule is vertical
The purpose of arrangement；When heating ,-the Si-Cl in the organosilicon material can be chemically reacted with substrate surface-OH, formed-
Si-O- keys, are anchored on substrate surface in a manner of chemical bond, can further improve the stability of anchoring liquid crystal molecule.
The present invention also aims to provide a kind of production method of liquid crystal display panel to save compared with prior art
PI film processing procedures reduce production cost, promote production capacity, and the orientation of liquid crystal molecule works well.
To achieve the above object, the present invention provides a kind of response type vertical orientation organosilicon material, general structure A-
R, wherein
A refers to-SiCl3；
R refers to some CH in the alkyl of the linear chain or branched chain with 5~20 C atoms, the alkyl2Group is by benzene
Some H in group or the alkyl that base, naphthenic base ,-CONH- ,-COO- ,-O-CO- ,-CO- or-CH=CH- are replaced
The group that atom is replaced by F or Cl atoms.
The structural formula of the response type vertical orientation organosilicon material is：
The present invention also provides a kind of production methods of liquid crystal display panel, include the following steps：
Step 1 provides a CF substrates and TFT substrate and liquid crystal compound；
Wherein, the surface of CF substrates side is equipped with first electrode, and the surface of the TFT substrate side is equipped with the
Two electrodes；
The liquid crystal compound includes liquid crystal molecule, response type vertical orientation organosilicon material and reactive monomer；Its
In, the general structure of the response type vertical orientation organosilicon material is A-R, wherein A refers to-SiCl3；R refers to having
Some CH in the alkyl of the linear chain or branched chain of 5~20 C atoms, the alkyl2Group by phenyl, naphthenic base ,-CONH- ,-
Some H atom in group or the alkyl that COO- ,-O-CO- ,-CO- or-CH=CH- are replaced is taken by F or Cl atoms
The group in generation；
The liquid crystal compound is instilled by the surface that TFT substrate is equipped with second electrode side using liquid crystal drop process,
The peripheral position that one side surface of first electrode is equipped in CF substrates is coated with frame glue, under vacuum conditions by the CF substrates and TFT
The vertical fitting of substrate in batch；
At this point, the response type vertical orientation organosilicon material is by between the Cl atoms and the-OH of substrate surface of itself
Hyarogen-bonding is formed to be vertically arranged on substrate, so that liquid crystal molecule is arranged perpendicular to CF substrates and TFT substrate；
Step 2 after carrying out UV irradiation solidifications to frame glue, then carries out hot setting processing procedure, in the hot setting processing procedure of frame glue
In, with CF substrates and the-OH on TFT substrate surface chemistry occurs for-the Si-Cl in the response type vertical orientation organosilicon material
Reaction, sloughs HCl formation-Si-O- keys, to make response type vertical orientation organosilicon material anchor in a manner of-Si-O- keys
It is scheduled on CF substrates and TFT substrate surface；
Step 3 applies voltage by first electrode and second electrode to liquid crystal compound both sides, so that liquid crystal molecule is occurred inclined
Turn；
Step 4 while continue to apply voltage to liquid crystal compound both sides, irradiates UV light so that anti-to liquid crystal compound
Answer type vertical orientation organosilicon material with reactive monomer in CF substrates and TFT substrate surface aggregate, to reach anchoring liquid crystal point
The purpose of son；
Step 5 stops applying voltage to liquid crystal compound both sides so that liquid crystal molecule generates pre-tilt angle.
The structural formula of the response type vertical orientation organosilicon material is：
The reactive monomer is one or more in following four compound：
In the liquid crystal compound, the content of the response type vertical orientation organosilicon material is 0.1~5wt%, described
The content of reactive monomer is 0.01~0.1wt%.
The first electrode and second electrode are respectively public electrode and pixel electrode.
In the step 2, use illumination for 65mW/cm2UV light to frame glue carry out UV irradiation solidification, the height of the frame glue
The temperature of warm curing process is 120 DEG C.
For the step 3 with step 4, the size to the voltage of liquid crystal compound both sides application is 15~25V.
In the step 4, the intensity to the UV light of liquid crystal display panel irradiation is 50~85mW/cm2；The wave of the UV light
A length of 365nm.
Beneficial effects of the present invention：A kind of response type vertical orientation organosilicon material of present invention offer and liquid crystal display panel
Production method, the general structure of the response type vertical orientation organosilicon material is A-R, wherein A refers to-SiCl3；R refers to
Be the alkyl of linear chain or branched chain with 5~20 C atoms, some CH in the alkyl2Group by phenyl, naphthenic base ,-
Some H atom in group or the alkyl that CONH- ,-COO- ,-O-CO- ,-CO- or-CH=CH- are replaced is by F or Cl
The group of atom substitution.In the substrate surface of no PI films, which relies primarily on the Cl atoms and substrate surface of itself
- OH between interaction of hydrogen bond, to achieve the purpose that so that liquid crystal molecule be arranged vertically；When heating, the organosilicon material
In-Si-Cl can be chemically reacted with substrate surface-OH, formation-Si-O- keys are anchored on substrate in a manner of chemical bond
Surface can further improve the stability of anchoring liquid crystal molecule；So that using the response type vertical orientation organosilicon material
Liquid crystal display panel can not use alignment film, can not only simplify the processing procedure of TFT-LCD, but also greatly reduce TFT-
The production cost of LCD；The production method of the liquid crystal display panel of the present invention is simple, eliminates PI film processing procedures, reduces production cost,
Production capacity is promoted, and the orientation of liquid crystal molecule works well.
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with the detailed of the present invention
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
Description of the drawings
Below in conjunction with the accompanying drawings, it is described in detail by the specific implementation mode to the present invention, technical scheme of the present invention will be made
And other beneficial effects are apparent.
In attached drawing,
Fig. 1 is the schematic diagram of the response type vertical orientation organosilicon material and substrate surface effect of the present invention；
Fig. 2 is the schematic diagram of the production method step 1 of the liquid crystal display panel of the present invention；
Fig. 3 is the schematic diagram of the production method step 2 of the liquid crystal display panel of the present invention；
Fig. 4 is the schematic diagram of the production method step 3 of the liquid crystal display panel of the present invention；
Fig. 5 is the schematic diagram of the production method step 4 of the liquid crystal display panel of the present invention；
Fig. 6 is the schematic diagram of the production method step 5 of the liquid crystal display panel of the present invention.
Specific implementation mode
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with the preferred implementation of the present invention
Example and its attached drawing are described in detail.
Referring to Fig. 1, a kind of response type vertical orientation organosilicon material of present invention offer, general structure A-R,
In,
A refers to-SiCl3；
R refers to some CH in the alkyl of the linear chain or branched chain with 5~20 C atoms, the alkyl2Group is by benzene
Some H in group or the alkyl that base, naphthenic base ,-CONH- ,-COO- ,-O-CO- ,-CO- or-CH=CH- are replaced
The group that atom is replaced by F or Cl atoms.
Preferably, the structural formula of the response type vertical orientation organosilicon material is：
As shown in Figure 1, the response type vertical orientation organosilicon material of the present invention, includes mainly head base A and tail base R two
Point, the main function of head base A is using forming Hyarogen-bonding between itself-Cl and the-OH of substrate surface so that this is organic
Silicon materials are vertically arranged in by Hyarogen-bonding on substrate, when heating ,-Si-Cl the meetings in the head base A and substrate surface
- OH chemically react, formation-Si-O- keys, to make the organosilicon material be anchored on substrate table in a manner of chemical bond
Face further increases the stability of anchoring liquid crystal molecule, and the main function of tail base R is analogous to the effect of PI branches with solid
The mode of obstacle makes liquid crystal molecule be arranged vertically.
The synthetic method of the response type vertical orientation organosilicon material of the present invention is shown using two embodiments below：
Embodiment 1 (by aromatic amine synthetic reaction type vertical orientation organosilicon material)：
Step 1, according to aromatic amine (I)：HCl：NaNO2=1：(1~5)：The molar ratio of (1.01~1.10) is weighed or is measured
Take aromatic amine (I), hydrochloric acid and NaNO2, by the aromatic amine taken (I), hydrochloric acid and NaNO2It is placed in reactor, is stirred,
It is reacted 3~5 hours at 0~5 DEG C, obtains product diazol (II)；
Step 2：It is 1~1.2 to be added in the product diazol (II) that step 1 obtains with the molar ratio of diazol (II)
CuCl2, reacted 1~5 hour at 50~100 DEG C；Product chlorobenzene (III) can be obtained；
Step 3, according to chlorobenzene (III)：Trichlorosilane=1:1 molar ratio measure phenyl grignard reagent (chlorobenzene (III),
It is prepared by Mg and LiCl) and trichlorosilane, by the phenyl grignard reagent and trichlorosilane that have taken be dissolved in solvent (toluene or just oneself
Alkane) in, using a small amount of metal Pd as catalyst, reaction temperature is 130~135 DEG C, is reacted 1~3 hour, be can be obtained after purification
The compound (IV).
H is carried out to obtained compound (IV)1- NMR is analyzed, and obtained nuclear magnetic resonance data is：δ=0.96 (3H), δ=
1.33 (2H), δ=1.29 (6H), δ=1.62 (2H), δ=2.55 (2H), δ=7.1 (2H), δ=7.2 (2H).
Embodiment 2 (by aromatic nitriles synthetic reaction type vertical orientation organosilicon material)：
Step 1, according to aromatic nitriles (V)：LiAlH4=1：The molar ratio of (1~3) weighs aromatic nitriles (V) and LiAlH4, according to
According to aromatic nitriles (V)：Ether=1：3 (unit ratio mol：L ether) is measured, by the aromatic nitriles taken (V) and LiAlH4Dissolving
In ether；Then reaction 1~5 hour is carried out by the way of being heated to reflux at 72 DEG C, then according to V (NaOH)/V (second
Ether)=2/1 volume ratio is added the ice water solution containing 20wt% sodium hydroxides the reaction was continued, you can obtain product aromatic amine
(VI)；
Step 2, according to aromatic amine (VI)：HCl：NaNO2=1：(1~5)：The molar ratio of (1.01~1.10) is weighed or is measured
Take aromatic amine (VI), hydrochloric acid and NaNO made from above-mentioned steps 12, by the aromatic amine taken (VI), hydrochloric acid and NaNO2It is placed in anti-
It answers in device, is stirred, reacted 3~5 hours at 0~5 DEG C, obtain product diazol (VII)；
Step 3：It is 1~1.2 to be added in the product diazol (VII) that step 2 obtains with the molar ratio of diazol (VII)
CuCl2, reacted 1~5 hour at 50~100 DEG C, product chlorobenzene (VIII) can be obtained；
Step 4, according to chlorobenzene (VIII)：Trichlorosilane=1:1 molar ratio measures phenyl grignard reagent (chlorobenzene
(VIII), prepared by Mg and LiCl) and trichlorosilane, the phenyl grignard reagent and trichlorosilane that have taken are dissolved in solvent (toluene
Or n-hexane) in, using a small amount of metal Pd as catalyst, reaction temperature is 130~135 DEG C, is reacted 1~3 hour, after purification
The compound (IX) can be obtained.
H is carried out to obtained compound (IX)1- NMR is analyzed, and obtained nuclear magnetic resonance data is：δ=0.96 (3H), δ=
1.33 (2H), δ=1.29 (2H), δ=1.62 (2H), δ=2.55 (2H), δ=7.18 (2H), δ=7.43 (2H), δ=7.54
(4H), δ=7.5 (2H), δ=7.3 (2H).
A kind of response type vertical orientation organosilicon material provided by the invention can be relied in the substrate surface of no PI films
Interaction of hydrogen bond between itself Cl atoms and the-OH of substrate surface, to reach so that the mesh of liquid crystal molecule vertical arrangement
's；When heating ,-the Si-Cl in the organosilicon material can be chemically reacted with substrate surface-OH, formation-Si-O- keys, with
The mode of chemical bond is anchored on substrate surface, can further improve the stability of anchoring liquid crystal molecule.So that anti-using this
It answers the liquid crystal display panel of type vertical orientation organosilicon material that can not use alignment film, can not only simplify the system of TFT-LCD
Journey, and greatly reduce the production cost of TFT-LCD.
Fig. 2-5 is please referred to, is based on above-mentioned response type vertical orientation organosilicon material, the present invention also provides a kind of liquid crystal displays
The production method of panel, includes the following steps：
Step 1, as shown in Fig. 2, providing CF substrates 1 and TFT substrate 2 and liquid crystal compound 3；
Wherein, the surface of 1 side of CF substrates is equipped with first electrode 11, is set on the surface of 2 side of the TFT substrate
There is second electrode 21；
The liquid crystal compound 3 includes liquid crystal molecule 31, response type vertical orientation organosilicon material 32 and reactive monomer
33；Wherein, the general structure of the response type vertical orientation organosilicon material 32 is A-R, wherein A refers to-SiCl3；R refers to
Be the alkyl of linear chain or branched chain with 5~20 C atoms, some CH in the alkyl2Group by phenyl, naphthenic base ,-
Some H atom in group or the alkyl that CONH- ,-COO- ,-O-CO- ,-CO- or-CH=CH- are replaced is by F or Cl
The group of atom substitution；
The liquid crystal compound 3 is instilled by the table that TFT substrate 2 is equipped with 21 side of second electrode using liquid crystal drop process
Face, the peripheral position that 11 1 side surface of first electrode is equipped in CF substrates 1 is coated with frame glue 4, under vacuum conditions by the CF bases
2 groups of plate 1 and TFT substrate is vertical to be bonded；
At this point, the response type vertical orientation organosilicon material 32 by itself Cl atoms and substrate surface-OH it
Between formed Hyarogen-bonding to be vertically arranged on substrate so that liquid crystal molecule 31 is perpendicular to CF substrates 1 and TFT substrate
2 arrangements.
Preferably, the structural formula of the response type vertical orientation organosilicon material 32 is：
Specifically, the reactive monomer 33 can be any anti-used in polymer vertical orientation technology (PSVA)
Answering property monomer.
Preferably, the reactive monomer 33 can be one or more in following four compound：
Preferably, in the liquid crystal compound 3, the content of the response type vertical orientation organosilicon material 32 is 0.1~
The content of 5wt%, the reactive monomer 33 are 0.01~0.1wt%.
Specifically, the first electrode 11 is respectively public electrode and pixel electrode with second electrode 21.
Step 2, as shown in figure 3, to frame glue 4 carry out illumination be 65mW/cm2The irradiation solidification of UV light after, then carry out 120 DEG C
Hot setting processing procedure, in the hot setting processing procedure of frame glue 4 ,-the Si- in the response type vertical orientation organosilicon material 32
- the OH on 2 surface of Cl and CF substrates 1 and TFT substrate is chemically reacted, and sloughs HCl formation-Si-O- keys, described anti-to make
Type vertical orientation organosilicon material 32 is answered to be anchored on CF substrates 1 and 2 surface of TFT substrate in a manner of-Si-O- keys.
Step 3, as shown in figure 4, apply 15 to 3 both sides of liquid crystal compound by first electrode 11 and second electrode 21~
The voltage of 25V makes liquid crystal molecule 31 deflect.
Step 4, as shown in figure 5, while continuing to apply the voltage of 15~25V to 3 both sides of liquid crystal compound, it is mixed to liquid crystal
It closes object 3 and irradiates 50~85mW/cm2UV light so that response type vertical orientation organosilicon material 32 and reactive monomer 33 are in CF
Substrate 1 and 2 surface aggregate of TFT substrate, to achieve the purpose that be anchored liquid crystal molecule 31.
Preferably, the wavelength of the UV light is 365nm.
Step 5, as shown in fig. 6, stop to 3 both sides of liquid crystal compound apply voltage so that liquid crystal molecule 31 generate pre-dumping
Angle.
The production method of a kind of liquid crystal display panel provided by the invention, by the CF substrates and TFT that PI films are not arranged
Sandwiched liquid crystal compound between substrate, the liquid crystal compound include liquid crystal molecule, response type vertical orientation organosilicon material and
Reactive monomer, thus when carrying out UV irradiations solidification and hot setting to frame glue, the response type vertical orientation organosilicon material
- the OH of-Si-Cl and substrate surface in material are chemically reacted, and formation-Si-O- keys are anchored on substrate in a manner of chemical bond
Surface so that liquid crystal molecule is arranged perpendicular to CF substrates and TFT substrate, applies voltage to liquid crystal compound later so that liquid crystal
Molecule deflects, and finally carries out UV light irradiations to liquid crystal compound so that response type vertical orientation organosilicon material and reactivity list
Body is in CF substrates and TFT substrate surface aggregate, to achieve the purpose that be anchored liquid crystal molecule, after release voltage, and liquid crystal molecule production
Raw pre-tilt angle.Compared with prior art, the production method of liquid crystal display panel of the invention is simple, eliminates PI film processing procedures, drop
Low production cost promotes production capacity, and the orientation of liquid crystal molecule works well.
In conclusion the present invention provides the making side of a kind of response type vertical orientation organosilicon material and liquid crystal display panel
The general structure of method, the response type vertical orientation organosilicon material is A-R, wherein A refers to-SiCl3；R refers to having
Some CH in the alkyl of the linear chain or branched chain of 5~20 C atoms, the alkyl2Group by phenyl, naphthenic base ,-CONH- ,-
Some H atom in group or the alkyl that COO- ,-O-CO- ,-CO- or-CH=CH- are replaced is taken by F or Cl atoms
The group in generation.In the substrate surface of no PI films, the organosilicon material rely primarily on itself Cl atoms and substrate surface-OH it
Between interaction of hydrogen bond, to achieve the purpose that so that liquid crystal molecule be arranged vertically；When heating ,-the Si- in the organosilicon material
Cl can be chemically reacted with substrate surface-OH, and formation-Si-O- keys are anchored on substrate surface in a manner of chemical bond, can
Further increase the stability of anchoring liquid crystal molecule；So that using the liquid crystal of the response type vertical orientation organosilicon material
Show that panel can not use alignment film, can not only simplify the processing procedure of TFT-LCD, but also greatly reduce the production of TFT-LCD
Cost；The production method of the liquid crystal display panel of the present invention is simple, eliminates PI film processing procedures, reduces production cost, promotes production capacity,
And the orientation of liquid crystal molecule works well.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding change and deformations are made in design, and all these change and distortions should all belong to the claims in the present invention
Protection domain.
Claims (7)
1. a kind of production method of liquid crystal display panel, which is characterized in that include the following steps：
Step 1 provides a CF substrates (1) and TFT substrate (2) and liquid crystal compound (3)；
Wherein, the surface of CF substrates (1) side is equipped with first electrode (11), on the surface of TFT substrate (2) side
Equipped with second electrode (21)；
The liquid crystal compound (3) includes that liquid crystal molecule (31), response type vertical orientation organosilicon material (32) and reactivity are single
Body (33)；
The liquid crystal compound (3) is instilled by TFT substrate (2) using liquid crystal drop process and is equipped with second electrode (21) side
Surface is equipped with the peripheral position coating frame glue (4) of (11) one side surface of first electrode in CF substrates (1), under vacuum conditions will
The CF substrates (1) are stood with TFT substrate (2) group and are bonded；
At this point, the response type vertical orientation organosilicon material (32) is by between the Cl atoms and the-OH of substrate surface of itself
Hyarogen-bonding is formed to be vertically arranged on substrate, so that liquid crystal molecule (31) is perpendicular to CF substrates (1) and TFT bases
Plate (2) arranges；
Step 2 after carrying out UV irradiation solidifications to frame glue (4), then carries out hot setting processing procedure, the hot setting system in frame glue (4)
The Cheng Zhong ,-Si-Cl in the response type vertical orientation organosilicon material (32) and CF substrates (1) and TFT substrate (2) surface
- OH chemically react, HCl formation-Si-O- keys are sloughed, to make the response type vertical orientation organosilicon material (32)
CF substrates (1) and TFT substrate (2) surface are anchored in a manner of-Si-O- keys；
Step 3 applies voltage by first electrode (11) and second electrode (21) to liquid crystal compound (3) both sides, makes liquid crystal point
Sub (31) deflect；
Step 4, continue to liquid crystal compound (3) both sides apply voltage while, to liquid crystal compound (3) irradiate UV light so that
Response type vertical orientation organosilicon material (32) and reactive monomer (33) in CF substrates (1) and TFT substrate (2) surface aggregate,
To achieve the purpose that be anchored liquid crystal molecule (31)；
Step 5 stops applying voltage to liquid crystal compound (3) both sides so that liquid crystal molecule (31) generates pre-tilt angle；
The structural formula of the response type vertical orientation organosilicon material (32) is：
2. the production method of liquid crystal display panel as described in claim 1, which is characterized in that the reactive monomer (33) is
It is one or more in three kinds of compounds below：
3. the production method of liquid crystal display panel as described in claim 1, which is characterized in that in the liquid crystal compound (3),
The content of the response type vertical orientation organosilicon material (32) is 0.1~5wt%, and the content of the reactive monomer (33) is
0.01~0.1wt%.
4. the production method of liquid crystal display panel as described in claim 1, which is characterized in that the first electrode (11) and the
Two electrodes (21) are respectively public electrode and pixel electrode.
5. the production method of liquid crystal display panel as described in claim 1, which is characterized in that in the step 2, using illumination
For 65mW/cm2UV light UV irradiation solidifications are carried out to frame glue (4), the temperature of the hot setting processing procedure of the frame glue (4) is 120
℃。
6. the production method of liquid crystal display panel as described in claim 1, which is characterized in that in the step 3 and step 4,
Size to the voltage of liquid crystal compound (3) both sides application is 15~25V.
7. the production method of liquid crystal display panel as described in claim 1, which is characterized in that in the step 4, to liquid crystal
Show that the intensity of the UV light of panel irradiation is 50~85mW/cm2；The wavelength of the UV light is 365nm.
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| CN201510797130.7A CN105481889B (en) | 2015-11-17 | 2015-11-17 | The production method of response type vertical orientation organosilicon material and liquid crystal display panel |
| PCT/CN2015/098500 WO2017084147A1 (en) | 2015-11-17 | 2015-12-23 | Reaction-type vertical alignment organosilicon material and method for manufacturing liquid crystal display panel |
| US14/914,646 US10167426B2 (en) | 2015-11-17 | 2015-12-23 | Reactive perpendicular aligned organosilicon material and manufacture method of liquid crystal display panel |
| US16/197,295 US10513658B2 (en) | 2015-11-17 | 2018-11-20 | Reactive perpendicular aligned organosilicon material and manufacture method of liquid crystal display panel |
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| CN105936830A (en) * | 2016-04-22 | 2016-09-14 | 深圳市华星光电技术有限公司 | Liquid crystal material, liquid crystal display panel manufacturing method and liquid crystal display panel |
| CN107463029B (en) * | 2017-08-25 | 2020-11-24 | 深圳市华星光电技术有限公司 | Self-orientation liquid crystal display panel and manufacturing method thereof |
| CN111752048B (en) * | 2019-03-29 | 2023-07-04 | 夏普株式会社 | Liquid crystal display device having a light shielding layer |
| CN110187565B (en) * | 2019-05-23 | 2021-11-02 | Tcl华星光电技术有限公司 | Display and method of manufacturing the same |
| CN110317148B (en) * | 2019-06-27 | 2022-05-03 | Tcl华星光电技术有限公司 | Reactive monomer, liquid crystal composition and liquid crystal display panel |
| CN110928056B (en) * | 2019-11-22 | 2022-06-24 | 华南师范大学 | Liquid crystal display device, method of manufacturing the same, and electronic apparatus |
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| US20190085246A1 (en) | 2019-03-21 |
| US10167426B2 (en) | 2019-01-01 |
| US10513658B2 (en) | 2019-12-24 |
| CN105481889A (en) | 2016-04-13 |
| WO2017084147A1 (en) | 2017-05-26 |
| US20180030353A1 (en) | 2018-02-01 |
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