CN105428525A - Phase change memory and manufacturing method thereof - Google Patents
Phase change memory and manufacturing method thereof Download PDFInfo
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- CN105428525A CN105428525A CN201510749756.0A CN201510749756A CN105428525A CN 105428525 A CN105428525 A CN 105428525A CN 201510749756 A CN201510749756 A CN 201510749756A CN 105428525 A CN105428525 A CN 105428525A
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The present invention discloses a phase change memory and a manufacturing method thereof. The phase change memory comprises an active element, a lower electrode, a first insulating layer, an upper electrode, a heater and an annular phase change layer. The lower electrode is coupled to the active device, the first insulating layer is located above the lower electrode, and the upper electrode is located above the first insulating layer. The heater is embedded in the first insulating layer, the annular phase change layer surrounds the first insulating layer and the upper electrode, and the annular phase change layer is in contact with one side surface of the heater. Since the contact area between the heating layer and the annular phase change layer is small, the reset current of the phase change memory is low.
Description
Technical field
The invention relates to a kind of phase-change memory and manufacture method thereof.
Background technology
Electronic product (such as: mobile phone, panel computer and digital camera) often has the memory cell of storage data.Known memory cell can pass through the storage node storing information on memory cell.Wherein, phase-change memory utilizes the resistance states of memory cell (such as high value and low resistance) to carry out storing information.Memory cell can have a material can changed between different phase (such as: crystalline phase and amorphous phase).Different phase makes memory cell have the resistance states of different resistance values, for the different numerical value representing storage data.
Phase-change memory unit, when operating, can apply electric current and make the temperature increase of memory cell to change the phase of material.But the heater in current existing phase-change memory and the contact area between phase-transition material are comparatively large, make the reset current of phase-change memory higher.Although micro-shadow and etch process can be utilized, form the column heater that top area is less, contact with each other with the end face of column heater and phase-transition material, but micro-photographing process still has its limit, and the difficulty of etch process is also high, therefore not easily precisely control the characteristic size of column heater.Therefore, one of less important topic becoming the art of the contact area between heater and phase-transition material can how be made.
Summary of the invention
An aspect of of the present present invention is to provide a kind of method manufacturing phase-change memory, comprises the following step.Form a bottom electrode; Form a heater above bottom electrode; Form one first insulating barrier and cover heater; Form a top electrode on the first insulating barrier; And form a ring-type phase change layer around the first insulating barrier and top electrode, a wherein side of ring-type phase change layer contact heater.
In one or more execution mode of the present invention, before formation bottom electrode, also comprise the following step.There is provided a substrate, and form an active member on substrate, wherein bottom electrode couples active member.
In one or more execution mode of the present invention, form the step of zone of heating above bottom electrode and comprise: deposit a heating material layer on bottom electrode; Form a filling member on heating material layer; And using filling member as shade, remove part heating material layer to form a heating pad wall above bottom electrode.
In one or more execution mode of the present invention, also comprise the following step.Deposit an insulating material and cover heating pad wall, and patterning insulating material and heating pad wall are to form the first insulating barrier and heater, and the side of the first insulating layer exposing heater.
In one or more execution mode of the present invention, become the step of filling member on heating material layer to comprise: to form one first cover curtain layer on heating material layer, and patterning first cover curtain layer expose heating material layer to form an opening; Form sidewall and bottom that one second cover curtain layer conformally covers the first cover curtain layer and opening; Anisotropic removes the second cover curtain layer, to form a clearance wall in the sidewall of opening from the second cover curtain layer; And form filling member in opening.
In one or more execution mode of the present invention, after formation filling member is in opening, more remove the first cover curtain layer and clearance wall.
In one or more execution mode of the present invention, go forward in bottom electrode at deposition hot material layer, more deposit a barrier layer above bottom electrode.
In one or more execution mode of the present invention, barrier layer comprises tantalum nitride, and heating material layer comprises titanium nitride.
In one or more execution mode of the present invention, formation ring-type phase change layer comprises around the step of the first insulating barrier and top electrode: deposit a phase change layer and conformally cover the first insulating barrier and top electrode; And anisotropic removes the phase change layer above top electrode, to form ring-type phase change layer around the first insulating barrier and top electrode.
In one or more execution mode of the present invention, also comprise the following step.Deposit one second insulating barrier and cover top electrode and ring-type phase change layer, and a planarization process is carried out to the second insulating barrier, top electrode and ring-type phase change layer.
Another aspect of the present invention is to provide a kind of phase-change memory, comprises active member, bottom electrode, the first insulating barrier, top electrode, heater and ring-type phase change layer.Bottom electrode couples active member, and the first insulating barrier is positioned at above bottom electrode, and top electrode is positioned at above the first insulating barrier.Heater is embedded in the first insulating barrier, and ring-type phase change layer is then around the first insulating barrier and top electrode, and a side of ring-type phase change layer contact heater.
Accompanying drawing explanation
Figure 1A is the generalized section of the phase-change memory according to the several embodiment of the present invention;
Figure 1B illustrates the schematic perspective view of part-structure in Figure 1A;
Fig. 2,3,4,5,6,7,8A, 9A, 10,11,12 and 13 be the method for the manufacture phase-change memory according to the several execution mode of the present invention, in the generalized section in each stage of processing procedure;
Fig. 8 B illustrates the upper schematic diagram of the processing procedure intermediate structure of Fig. 8 A;
Fig. 9 B illustrates the upper schematic diagram of the processing procedure intermediate structure of Fig. 9 A.
Embodiment
Below will disclose multiple embodiment of the present invention with accompanying drawing, as clearly stated, the details in many practices will be explained in the following description.But should be appreciated that, the details in these practices is not applied to limit the present invention.That is, in section Example of the present invention, the details in these practices is non-essential.In addition, for simplifying for the purpose of accompanying drawing, some known usual structures and element illustrate in the mode simply illustrated in the accompanying drawings.
As described in prior art, the heater in current existing phase-change memory and the contact area between phase-transition material are comparatively large, make the reset current of phase-change memory higher.Although micro-shadow and etch process can be utilized, form the column heater that top area is less, contact with each other with the end face of column heater and phase-transition material, but micro-photographing process still has its limit, and the difficulty of etch process is also high, therefore not easily precisely control the characteristic size of column heater.
Therefore, the invention provides a kind of phase-change memory, comprise heater and ring-type phase change layer.The lateral width that contact area between zone of heating and ring-type phase change layer is about heater is multiplied by thickness.When the very thin thickness of zone of heating, contact area is very little, makes phase-change memory can have extremely low replacement (RESET) electric current, thus effectively solves the problem described in prior art.
In addition, the processing procedure forming heater of the present invention can not suffer from problems such as forming the limit of micro-photographing process that column heater faces and the difficulty of etch process.In other words, compared to formation column heater, the processing procedure forming heater of the present invention is easier to control, and can the characteristic size of effective control heater.The various embodiments of phase-change memory of the present invention and manufacture method thereof will be described in detail below.
Figure 1A is the generalized section of the phase-change memory 100 according to the several embodiment of the present invention.As shown in Figure 1A, phase-change memory 100 comprises active member 120, bottom electrode 140, heater 154, first insulating barrier 160, ring-type phase change layer 165 and top electrode 170.Active member 120 is arranged in substrate 110, and in the present embodiment, active member 120 is electric crystal (transistor), it comprises source electrode 122, drain electrode 124 and grid 126, source electrode 122 is the doped regions being arranged in substrate 110 with drain electrode 124, and grid 126 is arranged on substrate 110 and between source electrode 122 and drain electrode 124.In other some embodiments of the present invention, also there is shallow trench isolation (shallowtrenchisolation, STI) structure 112 with electrically isolated adjacent active member 120 in substrate 110.In other some embodiments of the present invention, the material of substrate 110 comprises silicon or other semiconductor element, as germanium or iii-v element, but not as limit, and the material of shallow slot isolation structure 112 comprises silica, silicon nitride, silicon oxynitride or other suitable insulating material.
Phase-change memory 100 also has a dielectric layer 130 and to be positioned on substrate 110 and to cover active member 120, and also there is in dielectric layer 130 multiple conductive contact 135, these conductive contacts 135 to be positioned at above drain electrode 124 and to contact drain electrode 124, to be connected to the active member 120 in substrate 110.In section Example of the present invention, conductive contact 135 comprises metal, metallic compound or its combination, such as titanium, tantalum, tungsten, aluminium, copper, molybdenum, platinum, titanium nitride, tantalum nitride, ramet, tantalum nitride silicon, tungsten nitride, molybdenum nitride, nitrogen molybdenum oxide, ruthenium-oxide, titanium aluminium, TiAlN, carbon tantalum nitride, other suitable materials or its combination.
Bottom electrode 140 is positioned on conductive contact 135 to couple active member 120 through conductive contact 135.In section Example of the present invention, bottom electrode 140 comprises titanium, titanium nitride, tantalum nitride, TiAlN, aluminium nitride tantalum or its combination.
Heater 154 is positioned at above bottom electrode 140, and the cross-sectional width W1 of heater 154 and thickness T1 is the smaller the better.In some embodiments of the present invention, the cross-sectional width W1 of heater 154 is between 30 nanometer to 50 nanometers, and the thickness T1 of heater 154 is less than or equal to 3 nanometers, is even less than or equal to 2.5 nanometers, 2 nanometers, 1.5 nanometers or 1 nanometer, but is not limited thereto.In some embodiments of the present invention, heater 154 comprises titanium, titanium nitride, tantalum nitride, TiAlN, aluminium nitride tantalum or its combination.
In some embodiments of the present invention, also comprise resistance impaired pieces 152 and be located between heater 154 and bottom electrode 140.In some embodiments of the present invention, resistance impaired pieces 152 comprise tantalum nitride, aluminium nitride tantalum or its combination, and it has lower heat conductivity, and can promote the electrical of the phase-change memory 100 of preparation.In other some embodiments of the present invention, resistance impaired pieces 152 comprise tantalum nitride, and heater 154 comprises titanium nitride.
Then please refer to Figure 1A and Figure 1B, Figure 1B illustrates the schematic perspective view of part-structure in Figure 1A.As shown in Figure 1A and Figure 1B, first insulating barrier 160 to be positioned at above bottom electrode 140 and to cover heater 154, top electrode 170 is positioned at above the first insulating barrier 160, ring-type phase change layer 165 is then around insulating barrier 160 and top electrode 170, and a side 154a of ring-type phase change layer 165 contact heater 154.Heater 154 is embedded in this first insulating barrier 160, but the first insulating barrier 160 does not cover this heater 154 completely, and exposes the side 154a of heater 154.Specifically, when active member 120 provides current to bottom electrode 140, electric current sequentially can arrive top electrode 170 along the two sides 154a of bottom electrode 140, heater 154, heater, ring-type phase change layer 165.If the contact area between heater 154 and ring-type phase change layer 165 is less, higher current density can be allowed, and promote the efficiency of heating surface.
For present embodiment, heater 154 contacts with ring-type phase change layer 165 with the side 154a at its two ends, and the cross-sectional width W1 that the contact area therefore between heater 154 and ring-type phase change layer 165 is heater 154 is multiplied by thickness T1 and is multiplied by 2 again.It should be noted that the top area of existing minimum column heater is about 700 square nanometers (being about the top area that diameter is the cylindric heater of 28 ~ 30 nanometers).If the thickness T1 of heater 154 is 1 nanometer, cross-sectional width W1 is 30 nanometers, then contact area is about 60 square nanometers (30x1x2), much smaller than the top area of existing minimum column heater.If the thickness T1 of heater 154 is 2 nanometers, cross-sectional width W1 is 30 nanometers, then contact area is about 120 square nanometers (30x2x2), is also less than the top area of existing minimum column heater.Thus, phase-change memory 100 can be made to have extremely low reset current.
In some embodiments of the present invention, first insulating barrier 160 comprises oxide, nitride, nitrogen oxide or its combination, such as silica, silicon nitride, silicon oxynitride or its combination, and top electrode 170 comprises titanium, titanium nitride, tantalum nitride, TiAlN, aluminium nitride tantalum or its combination.In some embodiments of the present invention, ring-type phase change layer 165 comprises Ge-Sb-Te (Ge
2sb
2te
5, Ge
3sb
6te
5, GST), N doping Ge-Sb-Te (nitrogen-dopedGe
2sb
2te
5), antimony telluride (Sb
2te), germanium antimony (GeSb), indium doping antimony telluride (In-dopedSb
2te) or its combination.
In some embodiments of the present invention, the upper surface of top electrode 170 and the upper surface of ring-type phase change layer 165 are copline.In some embodiments of the present invention, phase-change memory 100 also comprises the second insulating barrier 180 between two ring-type phase change layers 165.In several embodiment, the second insulating barrier 180 comprises oxide, nitride, nitrogen oxide or its combination, such as silica, silicon nitride, silicon oxynitride or its combination.
In some embodiments of the present invention, phase-change memory 100 also comprises protective layer 185 and covers top electrode 170, ring-type phase change layer 165 and the second insulating barrier 180.Protective layer 185 can be single or multiple lift structure.In some embodiments of the present invention, protective layer 185 comprises oxide, nitride, nitrogen oxide or its combination, such as silica, silicon nitride, silicon oxynitride or its combination.In some embodiments of the present invention, protective layer 185 comprises two-layer (not illustrating), and lower floor covers top electrode 170, ring-type phase change layer 165 and the second insulating barrier 180; upper strata covers lower floor; wherein lower floor is nitride, and upper strata is oxide, but not as limit.
In some embodiments of the present invention, phase-change memory 100 also comprises vertical interconnecting structure 195 and couples top electrode 170 or source electrode 122.Specifically, some vertical interconnecting structure 195 is by protective layer 185 to contact top electrode 170, and some other vertical interconnecting structures 195 then pass through protective layer 185, second insulating barrier 180 with dielectric layer 130 to contact source electrode 122.In some embodiments of the present invention, vertical interconnecting structure 195 comprises metal, metallic compound or its combination, such as titanium, tantalum, tungsten, aluminium, copper, molybdenum, platinum, titanium nitride, tantalum nitride, ramet, tantalum nitride silicon, tungsten nitride, molybdenum nitride, nitrogen molybdenum oxide, ruthenium-oxide, titanium aluminium, TiAlN, carbon tantalum nitride, other suitable materials or its combination.
Fig. 2,3,4,5,6,7,8A, 9A, 10,11,12 and 13 be the method for the manufacture phase-change memory according to the several execution mode of the present invention, in the generalized section in each stage of processing procedure.Please also refer to Figure 1A, carry out Fig. 2,3,4,5,6,7,8A, 9A, 10,11, before the process stage shown in 12 and 13, first provide substrate 110, then form active member 120 in substrate 110 and top.In some embodiments of the present invention, utilize dopping process to form source electrode 122 and drain electrode 124, recycling deposition, micro-shadow and etch process form grid 126.The step forming active member 120 also can comprise through suitable process technique formation gate dielectric layer (not illustrating), clearance wall (sign), shallow doped-drain and/or other elements.
Formed after active member 120, as shown in Figure 1A, form dielectric layer 130 above active member 120, then form perforation and run through dielectric layer 130, to expose a part (such as: drain electrode 124) for active member 120.In some embodiments of the present invention, utilize chemical vapour deposition (CVD) or other suitable film deposition techniques to form dielectric layer 130, utilize micro-shadow and etch process, Laser drill processing procedure or other suitable processing procedures to form the perforation running through dielectric layer 130.
After forming perforation, as shown in Figure 1A, conductive contact 135 is formed in perforation, to couple active member 120.In some embodiments of the present invention, chemical vapour deposition (CVD), physical vapour deposition (PVD), ald, rotary coating process or other suitable formation processing procedures is utilized to form conductive contact 135.Then form bottom electrode 140 again and couple active member 120.In some embodiments of the present invention, chemical vapour deposition (CVD), physical vapour deposition (PVD), ald, rotary coating process or other suitable formation processing procedures is utilized to form bottom electrode 140.
After formation bottom electrode, sequentially carry out Fig. 2,3,4,5,6,7,8A, 9A, 10,11, the process stage of 12 and 13.Fig. 2,3,4,5,6,7, in 8A, 9A, 10,11,12 and 13, omit the substrate 110 shown in Figure 1A, active member 120 and conductive contact 135, only illustrate top and the bottom electrode 140 of dielectric layer 130.
Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8 A and Fig. 9 A illustrates and forms the step of heater 150 above bottom electrode 140.As shown in Figure 2, first deposit a heating material layer 210 above bottom electrode 140, then form one first cover curtain layer 230 on heating material layer 210, and patterning first cover curtain layer 230 exposes heating material layer 210 to form an opening 232.Specifically, as shown in Figure 2, first blanket-deposited heating material layer 210 is above bottom electrode 140.In some embodiments of the present invention, utilize physical vapour deposition (PVD), chemical vapour deposition (CVD), ald, other suitable deposition manufacture process or its combined deposition heating material layer 210.By preceding process, heating material layer 210 can be made to have very thin thickness T1, and effectively reduce and contact area between the heater of follow-up formation and ring-type phase change layer.
Afterwards, the first cover curtain layer 230 can be formed in heating material layer 210 with aforesaid deposition manufacture process, again by photoresist layer (not illustrating) rotary coating to the first cover curtain layer 230, then with Exposure mode by the design transfer of light shield (not illustrating) to photoresist layer, to expose the upper surface of the first cover curtain layer 230.Dry ecthing or wet etching processing procedure is finally used to remove the first cover curtain layer 230 of part, to form the opening 232 exposing heating material layer 210 in the first cover curtain layer 230.This opening 232 has cross-sectional width W2, and opening 232 is overlapping with bottom electrode 140 in upright projection direction.
In some embodiments of the present invention, before deposition hot material layer 210 is above bottom electrode 140, first deposit barrier layers 205 is above bottom electrode 140.In other some embodiments of the present invention, barrier layer 205 comprises tantalum nitride, and heating material layer 210 comprises titanium nitride.In other some embodiments of the present invention, the first cover curtain layer 230 comprises silicon nitride.
Then, as shown in Figure 3, sidewall and the bottom that one second cover curtain layer 310 conformally covers the first cover curtain layer 230 and opening 232 is formed.Specifically, the second cover curtain layer 310 forms the upper surface of thickness T2 in the first cover curtain layer 230 and the bottom place of opening 232, and forms thickness T3 in the side-walls of opening 222 simultaneously, and wherein thickness T3 is greater than thickness T2.Should be noted that, thickness T2 and T3 described herein is and heating material layer 210 thickness in vertical direction.In some embodiments of the present invention, with physical vaporous deposition, chemical vapour deposition technique, atomic layer deposition method or thermal oxidation mode deposited silicon nitride, make the second cover curtain layer 310 of formation have good step coverage, and the sidewall of opening 232 can be covered uniformly.
Then in the diagram, anisotropic removes the second cover curtain layer 310, to form a clearance wall 312 in the sidewall of opening 232 from the second cover curtain layer 310.In this step, be use one dry ecthing procedure with reduction second cover curtain layer 310 of anisotropic and heating material layer 210 thickness in vertical direction, and second cover curtain layer 310 at the bottom place of the upper surface and opening 232 that are positioned at the first cover curtain layer 230 is removed.But the second cover curtain layer 310 being positioned at the side-walls of opening 232 can not be completely removed because having larger thickness T3, the remaining clearance wall 312 of its energy is in the sidewall of opening 232.It should be noted that, clearance wall 312 makes the cross-sectional width of opening 232 be reduced to W3 from W2, and cross-sectional width W3 is more associated with the contact area between the heater of follow-up formation and phase change layer, will in subsequent detailed.
Then as shown in Figure 5, Figure 6, filling member is formed in opening 232.First refer to Fig. 5, first deposit an encapsulant layer 510 and cover the first cover curtain layer 230 and clearance wall 312, and the encapsulant layer 510 of part to enter in opening 232 and fills up opening 232.Afterwards more as shown in Figure 6, remove the encapsulant layer 510 above the first cover curtain layer 230 and clearance wall 312, and only remaining filling member 512 in opening 232.It should be noted that the filling member 512 of formation can fill up opening 232 completely, make it have the cross-sectional width W3 identical with opening 232.In some embodiments of the present invention, with chemical mechanical milling method (chemicalmechanicalpolishing, when CMP) removing the encapsulant layer 510 above the first cover curtain layer 230 and clearance wall 312, also can remove the first cover curtain layer 230 and the clearance wall 312 of part simultaneously, make the first cover curtain layer 230, clearance wall 312 be copline with the upper surface of filling member 512 whereby.In other some embodiments of the present invention, encapsulant layer 510 comprises polysilicon.
Then as shown in Figure 7, the first cover curtain layer 230 and clearance wall 312 is removed, to form filling member 512 on heating material layer 210.In this step, be remove the first cover curtain layer 230 and clearance wall 312 with dry ecthing, wet etching processing procedure or other suitable etching modes, but filling member 512 can not be removed and still remain on heating material layer 210.In some embodiments of the present invention, first cover curtain layer 230 is respectively silicon nitride and silica with the material of clearance wall 312, and the material of filling member 512 is polysilicon, the solvent (such as: hydrofluoric acid and phosphoric acid) having a larger etching selectivity to silicon nitride and silica now can be selected to remove the first cover curtain layer 230 and clearance wall 312.
Afterwards as shown in Figure 8 A, using filling member 512 as shade, remove part heating material layer 210 to form heating pad wall 212 above bottom electrode 140.In this step, remove the heating material layer 210 of part with wet etching or dry ecthing procedure, but under the protection of filling member 512, the heating material layer 210 below filling member 512 can not be removed, and can form heating pad wall 212 from heating material layer 210.It should be noted that the heating pad wall 212 of the definition using filling member 512 as shade, its cross-sectional width W1 can be same as the cross-sectional width W3 of filling member 512.As previously mentioned, clearance wall 312 makes the cross-sectional width of opening 232 be reduced to W3 from W2, and preparation has the filling member 512 of small cross sections width W 3 whereby, and reduces the cross-sectional width W1 of the heating pad wall 212 defined using this filling member 512 as shade.After forming heating pad wall 212, suitable solvent removal filling member 512 can be used.
In some embodiments of the present invention, wet etching or dry ecthing procedure together with time remove the barrier layer 205 of part, to form barrier wall 207 from barrier layer 205, and barrier wall 207 and heating pad wall 212 have identical cross-sectional width W1.
The upper schematic diagram of the processing procedure intermediate structure of Fig. 8 A is illustrated please continue to refer to Fig. 8 B, Fig. 8 B.In other words, Fig. 8 A is the profile of Fig. 8 B along AA hatching line.As shown in Figure 8 B, the heating pad wall 212 of formation can across several bottom electrode 140.In some embodiments of the present invention, the barrier wall 207 of formation equally can across several bottom electrode 140.
Then please refer to Fig. 9 A and Fig. 9 B, wherein Fig. 9 B illustrates the upper schematic diagram of the processing procedure intermediate structure of Fig. 9 A.In other words, Fig. 9 A is the profile of Fig. 9 B along AA hatching line.In figure 9 a, form the first insulating barrier 160 and cover heater 154, and form top electrode 170 on the first insulating barrier 160.In this step, first deposition of insulative material covers heating pad wall 212, then again deposits conductive material on insulating material.Afterwards a patterning process is carried out to electric conducting material and insulating material, form top electrode 170 to etch electric conducting material, etch insulating material in the lump and form the first insulating barrier 160.The top electrode 170 formed is positioned on the first insulating barrier 160, and exposes the dielectric layer 130 of part.It should be noted that as shown in Figure 9 B, patterning process together with time remove the heating pad wall 212 of part, so that the heating pad wall 212 originally across several bottom electrode 140 is separated into multiple heater 154 as shown in Figure 1A.In etching practice, define undersized rectangular configuration, the result of final etch can form the structure of sub-circular, and its top view is with regard to the top electrode 170 of circle as shown in Figure 9 B, and its three-dimensional shape is columned top electrode 170 and the first insulating barrier 160 as shown in Figure 1B.Each independently heater 154 corresponds to a bottom electrode 140, and the first insulating barrier 160 formed after etching exposes the side 154a of heater 154.
In some embodiments of the present invention, patterning process together with time remove the barrier wall 207 of part, so that the barrier wall 207 originally across several bottom electrode 140 is separated into multiple resistance impaired pieces 152 as shown in Figure 1A.
In some embodiments of the present invention, be utilize chemical vapour deposition (CVD), physical vapour deposition (PVD), ald or other suitable thin film deposition process blanket-deposited insulating material and electric conducting material.
It should be noted that from the above, can pass through deposition and micro-shadow and etch process and form heater 154 of the present invention, compared with conventional heater structure technology, the key of the heating surface (area) (HS size of the non-decision heater 154 of the limit of micro-shadow and etch process herein.Conventional heater structure contacts with phase-transition material with the area of its upper surface, but the contact area of heater structure of the present invention and phase-transition material is the width W 1 of heater 154 and the product of the thickness T1 of heater 154.Because the processing procedure forming heater 154 small thickness T1 of the present invention is easier to control, and utilize the width W 1 of reducing heater 152 of clearance wall 312, and can the characteristic size of effective control heater 152.
Subsequently, ring-type phase change layer 165 is formed around heater 154.Specifically, as shown in Figure 10, first blanket-deposited phase change layer 910 covers the first insulating barrier 160 and top electrode 170, the part of dielectric layer 130 be exposed to the outside with covering.In some embodiments of the present invention, utilize chemical vapour deposition (CVD) or other suitable film deposition techniques sedimentary facies change layer 910.Then, as shown in figure 11, anisotropic spacer etch processing procedure (anisotropicspaceretchprocess) is carried out to phase change layer 910, with anisotropic remove above top electrode 170 with part of dielectric layer 130 above phase change layer 910, and form ring-type phase change layer 165 around the first insulating barrier 160 and top electrode 170.And as shown in 9B figure, the first insulating barrier 160 exposes the side 154a of heater 154, the ring-type phase change layer 165 therefore formed is by this side 154a of contact heater 154.
Afterwards as shown in figure 12, deposit the second insulating barrier 180 and cover top electrode 170, ring-type phase change layer 165 and part of dielectric layer 130, and the second insulating barrier 180 of part is between two ring-type phase change layers 165.In several embodiment, utilize chemical vapour deposition (CVD) or other suitable film deposition techniques second insulating barriers 180.
Then as shown in figure 13, planarization process is carried out to the second insulating barrier 180, ring-type phase change layer 165 and top electrode 170.In several embodiment, planarization process comprises chemical mechanical polishing manufacture procedure, grinding processing procedure, etch process or other suitable materials remove processing procedure.In several embodiment, after carrying out planarization process, ring-type phase change layer 165, top electrode 170 and the second insulating barrier 180 be copline.
Get back to Figure 1A, in some embodiments of the present invention, after planarization process is carried out to the second insulating barrier 180, ring-type phase change layer 165 and top electrode 170, more form protective layer 185 and cover ring-type phase change layer 165 and top electrode 170.Then more form multiple perforation in lithography mode, wherein some perforation is by protective layer 185 to expose top electrode 170, and some perforation then passes through protective layer 185, second insulating barrier 180 with dielectric layer 130 to expose source electrode 122 in addition.Use suitable mode deposits conductive material afterwards in these perforation, to prepare vertical interconnecting structure 195, and complete the preparation of phase-change memory structure.Some vertical interconnecting structure 195 wherein contacts top electrode 170, to be electrically connected to the drain electrode 124 of active member 120 via top electrode 170, ring-type phase change layer 165, heater 154, resistance impaired pieces 152, bottom electrode 140 and conductive contact 135.On the other hand, the source electrode 122 of some other vertical interconnecting structure 195 contact active member 120.
Although the present invention discloses as above with execution mode; so itself and be not used to limit the present invention; anyly be familiar with this those skilled in the art; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, the scope that therefore protection scope of the present invention ought define depending on appending claims is as the criterion.
Claims (11)
1. manufacture a method for phase-change memory, it is characterized in that, comprise:
Form a bottom electrode;
Form a heater above this bottom electrode;
Form one first insulating barrier and cover this heater;
Form a top electrode on this first insulating barrier; And
Form a ring-type phase change layer around this first insulating barrier and this top electrode, wherein this ring-type phase change layer contacts a side of this heater.
2. the method for manufacture phase-change memory according to claim 1, is characterized in that, before this bottom electrode of formation, also comprises:
One substrate is provided; And
Form an active member on this substrate, wherein this bottom electrode couples this active member.
3. the method for manufacture phase-change memory according to claim 1, is characterized in that, forms the step of this heater above this bottom electrode and comprises:
Deposit a heating material layer on this bottom electrode;
Form a filling member on this heating material layer; And
Using this filling member as shade, remove this heating material layer of part to form a heating pad wall above this bottom electrode.
4. the method for manufacture phase-change memory according to claim 3, is characterized in that, also comprise:
Deposit an insulating material and cover this heating pad wall; And
This insulating material of patterning and this heating pad wall are to form this first insulating barrier and this heater, and this side of this this heater of the first insulating layer exposing.
5. the method for manufacture phase-change memory according to claim 3, is characterized in that, forms the step of this filling member on this heating material layer and comprises:
Form one first cover curtain layer on this heating material layer, and this first cover curtain layer of patterning exposes this heating material layer to form an opening;
Form sidewall and bottom that one second cover curtain layer conformally covers this first cover curtain layer and this opening;
Anisotropic removes this second cover curtain layer, to form a clearance wall in the sidewall of this opening from this second cover curtain layer; And
Form this filling member in this opening.
6. the method for manufacture phase-change memory according to claim 5, is characterized in that, after forming the step of this filling member in this opening, also comprises:
Remove this first cover curtain layer and this clearance wall.
7. the method for manufacture phase-change memory according to claim 3, is characterized in that, before depositing the step of this heating material layer on this bottom electrode, also comprises:
Deposit a barrier layer above this bottom electrode.
8. the method for manufacture phase-change memory according to claim 7, is characterized in that, this barrier layer comprises tantalum nitride, and this heating material layer comprises titanium nitride.
9. the method for manufacture phase-change memory according to claim 1, is characterized in that, forms this ring-type phase change layer and comprises around the step of this first insulating barrier and this top electrode:
Deposit a phase change layer and conformally cover this first insulating barrier and this top electrode; And
Anisotropic removes this phase change layer above this top electrode, to form this ring-type phase change layer around this first insulating barrier and this top electrode.
10. the method for manufacture phase-change memory according to claim 1, is characterized in that, also comprise:
Deposit one second insulating barrier and cover this top electrode and this ring-type phase change layer; And
One planarization process is carried out to this second insulating barrier, this top electrode and this ring-type phase change layer.
11. 1 kinds of phase-change memories, is characterized in that, comprise:
One bottom electrode, couples an active member;
One first insulating barrier, is positioned at above this bottom electrode;
One top electrode, is positioned at above this first insulating barrier;
One heater, is embedded in this first insulating barrier; And
One ring-type phase change layer, around this first insulating barrier and this top electrode, wherein this ring-type phase change layer contacts a side of this heater.
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