CN105428197A - Dry etching machine and lower electrode of dry etching machine - Google Patents
Dry etching machine and lower electrode of dry etching machine Download PDFInfo
- Publication number
- CN105428197A CN105428197A CN201510790754.6A CN201510790754A CN105428197A CN 105428197 A CN105428197 A CN 105428197A CN 201510790754 A CN201510790754 A CN 201510790754A CN 105428197 A CN105428197 A CN 105428197A
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- pin
- substrate
- hole
- bottom electrode
- controller
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a dry etching machine and a lower electrode of the dry etching machine. The dry etching machine comprises an upper electrode and the lower electrode arranged opposite to the upper electrode, wherein the lower electrode is provided with a base; a ceramic is arranged on the base; the upper surface of the ceramic bears a substrate; the lower electrode is provided with a plurality of pin holes and pins arranged corresponding to the pin holes; each pin hole penetrates through the base and the ceramic, and corresponds to one pin; a gasket is arranged on the upper surface, close to the ceramic, of each pin hole; a sensor is arranged below the gasket; the lower electrode comprises a controller; the controller is connected with the pins, the gaskets and the sensors; the controller controls the motion of the pins; and the sensors capture motion sensing signals of the pins and transmit the signals to the controller, so that the controller controls the gaskets to move relative to the pin holes according to the received sensing signals to seal or unseal the pin holes, and the damage of the lower electrode caused by a point discharge effect generated by an etching gas and the base is avoided.
Description
Technical field
The present invention relates to the bottom electrode of a kind of dry etcher and dry etcher.
Background technology
Along with the development of information-intensive society, to the demand growth of display device, thus promoted the fast development of liquid crystal panel industry, the output of panel constantly promotes.Etch process manufactures an important step in thin-film transistor LCD device (ThinFirmTransistorLiquidCrystalDisplay, referred to as TFT-LCD) array base palte process.Etch process is divided into dry etching process and wet etching process according to the physical state of etchant, and namely dry etching process is utilize etching gas to carry out the technique etched, and wet etching process is utilize etching liquid to carry out the technique etched.
The bottom electrode 12 ' of the dry etcher of prior art as shown in Figure 1, it carries out in the process of TFT-LCD processing and manufacturing utilizing dry etching process, if substrate 13 is not correctly placed on bottom electrode 12 ' upper (as shown in Figure 2), etching gas 20 then will be caused in etching process by pin-and-hole 18 and the electrode part generation point discharge effect in bottom electrode 12 ', bottom electrode 12 ' is caused to be wounded, and then cause dry etcher fault, cause the increase of production capacity decline and maintenance cost.
Summary of the invention
The technical problem that the present invention mainly solves is to provide the bottom electrode of a kind of dry etcher and dry etcher, causes bottom electrode to be wounded to avoid in etching etching gas by the bottom electrode generation point discharge effect of pin-and-hole and dry etcher.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: provide a kind of dry etcher, for carrying out dry etch process to substrate, described dry etcher comprises: top electrode and the bottom electrode be oppositely arranged with described top electrode, the upper surface of described bottom electrode is for carrying described substrate, described bottom electrode has a substrate, described substrate is provided with pottery, the upper surface of described pottery is used for bearing substrate, described bottom electrode arranges some pin-and-holes and the pin that arrange corresponding to each pin-and-hole, each pin-and-hole all runs through described substrate and described pottery and sells corresponding with one, pin-and-hole described in each is provided with pad near the upper surface of described pottery, the below of described pad is provided with inductor, described bottom electrode comprises a controller, described controller connects described pin respectively, described pad and described inductor, described controller controls the motion of pin, described inductor is caught the induced signal of pin motion and is transferred to controller, move with sealing relative to described pin-and-hole to make controller pad according to the described actuated signal control received or open described pin-and-hole.
Wherein, when described pin puts down, described inductor exports the first induced signal to described controller, and described controller pad according to described first actuated signal control received moves to seal described pin-and-hole, isolates to make etching gas and described substrate; When described pin erects, described inductor exports the second induced signal to described controller, described controller pad according to described second actuated signal control received moves to open described pin-and-hole, will be placed on the substrate jack-up of described ceramic upper surface to make described pin.
Wherein, described pad comprises two pads, controls described two pads link together when sealing described pin-and-hole, controls described two pads separately when opening described pin-and-hole; Described inductor comprises two inductors, is separately positioned on the both sides of each pin-and-hole.
Wherein, described dry etcher has a reaction chamber, described top electrode is arranged on the top of described reaction chamber, described bottom electrode is arranged on the bottom of described reaction chamber and relative with described top electrode, described bottom electrode carries the substrate of pending etch processes, described top electrode is connected to power supply, described bottom electrode ground connection, and described reaction chamber is also provided with the blast pipe that etching gas enters the air inlet pipe in it and gets rid of from it for the gas after process.
Wherein, described inductor is photoelectric sensor, and described substrate is electrode, and described pad is pottery, and described substrate is glass substrate.
For solving the problems of the technologies described above, another technical solution used in the present invention is: the bottom electrode providing a kind of dry etcher, described bottom electrode has a substrate, described substrate is provided with pottery, the upper surface of described pottery is used for bearing substrate, described bottom electrode arranges some pin-and-holes and the pin that arrange corresponding to each pin-and-hole, each pin-and-hole all runs through described substrate and described pottery and sells corresponding with one, pin-and-hole described in each is provided with pad near the upper surface of described pottery, the below of described pad is provided with inductor, described bottom electrode comprises a controller, described controller connects described pin respectively, described pad and described inductor, described controller controls the motion of pin, described inductor is caught the induced signal of pin motion and is transferred to controller, move with sealing relative to described pin-and-hole to make controller pad according to the described actuated signal control received or open described pin-and-hole.
Wherein, when described pin puts down, described inductor exports the first induced signal to described controller, and described controller pad according to described first actuated signal control received moves to seal described pin-and-hole, isolates to make etching gas and described substrate; When described pin erects, described inductor exports the second induced signal to described controller, described controller pad according to described second actuated signal control received moves to open described pin-and-hole, will be placed on the substrate jack-up of described ceramic upper surface to make described pin.
Wherein, described pad comprises two pads, controls described two pads link together when sealing described pin-and-hole, controls described two pads separately when opening described pin-and-hole; Described inductor comprises two inductors, is separately positioned on the both sides of each pin-and-hole.
Wherein, described dry etcher has a reaction chamber, described bottom electrode is arranged on the bottom of described reaction chamber, the top of described reaction chamber is provided with the top electrode relative with described bottom electrode, described bottom electrode carries the substrate of pending etch processes, described top electrode is connected to power supply, described bottom electrode ground connection, and described reaction chamber is also provided with the blast pipe that etching gas enters the air inlet pipe in it and gets rid of from it for the gas after process.
Wherein, described inductor is photoelectric sensor, and described substrate is electrode, and described pad is pottery, and described substrate is glass substrate.
The invention has the beneficial effects as follows: the situation being different from prior art, described dry etcher of the present invention by arranging pad and inductor on described bottom electrode, to export different induced signals according to inductor to the induction that pin moves and to be transferred to described controller, described gasket seal is controlled or pin-and-hole is stated in unlatching to make described controller, and then make described substrate also can not cause etching gas and substrate generation point discharge effect when the upper surface of described bottom electrode is placed abnormal, and then cause described bottom electrode to be wounded, cause described dry etcher fault.
Accompanying drawing explanation
Fig. 1 is the structural representation of the bottom electrode of the dry etcher of prior art;
Fig. 2 is the schematic diagram of prior art in etching during substrate placement exception;
Fig. 3 is the structural representation of dry etcher of the present invention;
Fig. 4 is the structural representation of the bottom electrode of dry etcher in Fig. 3;
Fig. 5 is the structural representation of the another kind of execution mode of pad in Fig. 4;
Fig. 6 is the operating diagram of the bottom electrode of dry etcher in Fig. 4;
Fig. 7 is the schematic diagram of the present invention in etching during substrate placement exception.
Embodiment
Referring to Fig. 3, is the structural representation of dry etcher 1 of the present invention.Described dry etcher 1 has a reaction chamber 10, the top of described reaction chamber 10 is provided with top electrode 11, bottom and the described top electrode 11 of described reaction chamber 10 are relatively provided with bottom electrode 12, described bottom electrode 12 can carry the substrate 13 of pending dry etch process.Described top electrode 11 is connected to power supply 31, described bottom electrode 12 ground connection.Described reaction chamber 10 is also provided with for etching gas, as the blast pipe 22 that plasma gas enters the air inlet pipe 21 in it and gets rid of from it for the gas after process.
Please refer to Fig. 4, the upper surface of described bottom electrode 12 is for carrying described substrate 13, described bottom electrode 12 has a substrate 121, described substrate 121 is provided with pottery 122, the described upper surface of ceramic 122 is for carrying described substrate 13, described bottom electrode 12 arranges some pin-and-holes 18 and the pin 17 that arrange corresponding to each pin-and-hole 18, each pin-and-hole 18 all runs through described substrate 121 and described ceramic 122 and corresponding with a pin 17, pin-and-hole 18 described in each is provided with pad 14 near the described upper surface of ceramic 122, the below of described pad 14 is provided with inductor 15, described bottom electrode 12 also comprises controller 16, described controller 16 connects described pin 17 respectively, described pad 14 and described inductor 15, described controller 16 controls the motion of described pin 17, described inductor 15 is caught the induced signal of described pin 17 motion and is transferred to described controller 16, move to seal or open described pin-and-hole 18 relative to described pin-and-hole 18 to make described controller 16 pad 14 according to the described actuated signal control received.
When described pin 17 puts down, described inductor 15 exports the first induced signal to described controller 16, described controller 16 pad 14 according to described first actuated signal control received moves to seal described pin-and-hole 18, isolates to make etching gas and described substrate 121; When described pin 17 erects, described inductor 15 exports the second induced signal to described controller 16, described controller 16 pad 14 according to described second actuated signal control received moves to open described pin-and-hole 18, will be placed on substrate 13 jack-up of described ceramic upper surface to make described pin 17.
In the present embodiment, described pad 14 comprises two pads, controls described two pads link together when sealing described pin-and-hole 18, controls described two pads separately when opening described pin-and-hole 18; Described inductor 15 comprises two inductors, is separately positioned on the both sides of each pin-and-hole 18.
The described pad 14 that should be understood that in the present invention is not limited to the embodiment disclosed in Fig. 4, also can adopt other execution modes, such as, and the pad of single piece type as shown in Figure 5.In the present invention, pad is fixed by buckle or screw, and the shape of pad does not also limit, and can be circular or square or other shapes, as long as can move to seal or open pin-and-hole by opposing pin bores 18.
In the present embodiment, described inductor 15 is photoelectric sensor, described substrate 121 is electrode, described pad 14 is pottery, described substrate 13 is glass substrate, and the quantity of described pin-and-hole 18 and described pin 17 is four, and one_to_one corresponding arranges and lays respectively at four angles of described bottom electrode 12, in other embodiments, the quantity of described pin 17 and pin-and-hole 18 can be arranged as required.
The operation principle of described dry etcher 1 is as follows:
Refer to Fig. 6, the arm (not shown) of described dry etcher 1 carries and moves to directly over described bottom electrode 12 by the substrate 13 of process to be etched, then described controller 16 controls described pin 17 and erects to support pending substrate 13, then, described arm is regained, described controller 16 controls described pin 17 and is put down, thus on the upper surface substrate 13 of process to be etched being placed on described bottom electrode 12 (as shown in Figure 4), be now that described substrate 13 places normal situation on the upper surface of described bottom electrode 12.If described substrate 13 is placed abnormal (as shown in Figure 7) on the upper surface of described bottom electrode 12, now described substrate 13 side tilts, and forms comparatively wide arc gap 21 between described bottom electrode 12.
When etching, high-frequency electric power is provided to the described top electrode 11 be oppositely disposed and described bottom electrode 12, to make there is constant pressure reduction between described top electrode 11 and described bottom electrode 12, and by air inlet pipe 21, etching gas is blown in reaction chamber 10, etching gas is in the blowing force of air inlet pipe 21, to be processed of substrate 13 to be etched is blowed to direction from top to bottom to carry out etch processes to substrate 13 under the effect of the suction of blast pipe 22 and the voltage between top electrode 11 and bottom electrode 12, blow to etching gas on to be processed of substrate 13 to be etched to be processed center to edge flowing, then discharged by blast pipe 22 downwards along substrate 13 edge.When described substrate 13 is placed normal on the upper surface of described bottom electrode 12, then described dry etcher 1 completes the normal etches process to described substrate 13; When exception placed by described substrate 13 on the upper surface of described bottom electrode 12, then described dry etcher can not carry out etch processes to described substrate 13, and simultaneously, because described pin-and-hole 18 seals by described pad 14, point discharge effect can not be there is with described substrate 121 in described etching gas 20 by described gap 21 and described pin-and-hole 18, can avoid thus causing described bottom electrode 12 to be wounded, and then avoid causing described dry etcher 1 fault.
Please continue to refer to Fig. 6, after described substrate 13 has etched, described controller 16 controls described pin 17 and upwards erects, thus by substrate 13 jack-up after etching, described arm stretches into the below of the substrate 13 after etching, and described controller 16 controls described pin 17 and put down, thus the substrate 13 after etching is placed on described arm, described arm is outwards regained carry the substrate after etching 13, thus is sent out from described bottom electrode 12 by the substrate 13 after etching.Finally, according to the size of required panel, the substrate 13 after process is cut.
Described dry etcher 1 by arranging pad 14 and inductor 15 on described bottom electrode 12, to export different induced signals according to inductor 15 to the induction that pin 17 moves and to be transferred to described controller 16, control described pad 14 to make described controller 16 and seal or open described pin-and-hole 18, and then also can not cause etching gas and substrate 121 that point discharge effect occurs when making described substrate 13 place exception on the upper surface of described bottom electrode 12, avoid causing described bottom electrode 12 to be caused described dry etcher 1 fault by wounding.
The foregoing is only embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (10)
1. a dry etcher, for carrying out dry etch process to substrate, it is characterized in that, described dry etcher comprises: top electrode and the bottom electrode be oppositely arranged with described top electrode, the upper surface of described bottom electrode is for carrying described substrate, described bottom electrode has a substrate, described substrate is provided with pottery, the upper surface of described pottery is used for bearing substrate, described bottom electrode arranges some pin-and-holes and the pin that arrange corresponding to each pin-and-hole, each pin-and-hole all runs through described substrate and described pottery and sells corresponding with one, pin-and-hole described in each is provided with pad near the upper surface of described pottery, the below of described pad is provided with inductor, described bottom electrode comprises a controller, described controller connects described pin respectively, described pad and described inductor, described controller controls the motion of pin, described inductor is caught the induced signal of pin motion and is transferred to controller, move with sealing relative to described pin-and-hole to make controller pad according to the described actuated signal control received or open described pin-and-hole.
2. dry etcher according to claim 1, it is characterized in that, when described pin puts down, described inductor exports the first induced signal to described controller, described controller pad according to described first actuated signal control received moves to seal described pin-and-hole, isolates to make etching gas and described substrate; When described pin erects, described inductor exports the second induced signal to described controller, described controller pad according to described second actuated signal control received moves to open described pin-and-hole, will be placed on the substrate jack-up of described ceramic upper surface to make described pin.
3. dry etcher according to claim 1, is characterized in that, described pad comprises two pads, controls described two pads link together when sealing described pin-and-hole, controls described two pads separately when opening described pin-and-hole; Described inductor comprises two inductors, is separately positioned on the both sides of each pin-and-hole.
4. dry etcher according to claim 1, it is characterized in that, described dry etcher has a reaction chamber, described top electrode is arranged on the top of described reaction chamber, described bottom electrode is arranged on the bottom of described reaction chamber and relative with described top electrode, and described bottom electrode carries the substrate of pending etch processes, described top electrode is connected to power supply, described bottom electrode ground connection, described reaction chamber is also provided with the blast pipe that etching gas enters the air inlet pipe in it and gets rid of from it for the gas after process.
5. dry etcher according to claim 1, is characterized in that, described inductor is photoelectric sensor, and described substrate is electrode, and described pad is pottery, and described substrate is glass substrate.
6. the bottom electrode of a dry etcher, it is characterized in that, described bottom electrode has a substrate, described substrate is provided with pottery, the upper surface of described pottery is used for bearing substrate, described bottom electrode arranges some pin-and-holes and the pin that arrange corresponding to each pin-and-hole, each pin-and-hole all runs through described substrate and described pottery and sells corresponding with one, pin-and-hole described in each is provided with pad near the upper surface of described pottery, the below of described pad is provided with inductor, described bottom electrode comprises a controller, described controller connects described pin respectively, described pad and described inductor, described controller controls the motion of pin, described inductor is caught the induced signal of pin motion and is transferred to controller, move with sealing relative to described pin-and-hole to make controller pad according to the described actuated signal control received or open described pin-and-hole.
7. the bottom electrode of dry etcher according to claim 6, it is characterized in that, when described pin puts down, described inductor exports the first induced signal to described controller, described controller pad according to described first actuated signal control received moves to seal described pin-and-hole, isolates to make etching gas and described substrate; When described pin erects, described inductor exports the second induced signal to described controller, described controller pad according to described second actuated signal control received moves to open described pin-and-hole, will be placed on the substrate jack-up of described ceramic upper surface to make described pin.
8. the bottom electrode of dry etcher according to claim 6, is characterized in that, described pad comprises two pads, controls described two pads link together when sealing described pin-and-hole, controls described two pads separately when opening described pin-and-hole; Described inductor comprises two inductors, is separately positioned on the both sides of each pin-and-hole.
9. the bottom electrode of dry etcher according to claim 6, it is characterized in that, described dry etcher has a reaction chamber, described bottom electrode is arranged on the bottom of described reaction chamber, the top of described reaction chamber is provided with the top electrode relative with described bottom electrode, described bottom electrode carries the substrate of pending etch processes, described top electrode is connected to power supply, described bottom electrode ground connection, described reaction chamber is also provided with the blast pipe that etching gas enters the air inlet pipe in it and gets rid of from it for the gas after process.
10. the bottom electrode of dry etcher according to claim 6, is characterized in that, described inductor is photoelectric sensor, and described substrate is electrode, and described pad is pottery, and described substrate is glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510790754.6A CN105428197B (en) | 2015-11-17 | 2015-11-17 | The bottom electrode of dry etcher and dry etcher |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510790754.6A CN105428197B (en) | 2015-11-17 | 2015-11-17 | The bottom electrode of dry etcher and dry etcher |
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| CN105428197A true CN105428197A (en) | 2016-03-23 |
| CN105428197B CN105428197B (en) | 2017-06-16 |
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| US4790258A (en) * | 1987-04-03 | 1988-12-13 | Tegal Corporation | Magnetically coupled wafer lift pins |
| US4968374A (en) * | 1988-06-09 | 1990-11-06 | Anelva Corporation | Plasma etching apparatus with dielectrically isolated electrodes |
| US5665167A (en) * | 1993-02-16 | 1997-09-09 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus having a workpiece-side electrode grounding circuit |
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