CN105304638A - Three-dimensional phase change memory structure and manufacturing structure - Google Patents
Three-dimensional phase change memory structure and manufacturing structure Download PDFInfo
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- CN105304638A CN105304638A CN201510786318.1A CN201510786318A CN105304638A CN 105304638 A CN105304638 A CN 105304638A CN 201510786318 A CN201510786318 A CN 201510786318A CN 105304638 A CN105304638 A CN 105304638A
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- 230000015654 memory Effects 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 230000008859 change Effects 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000012782 phase change material Substances 0.000 claims abstract description 31
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 17
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 13
- 239000010936 titanium Substances 0.000 claims abstract description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 239000010937 tungsten Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 238000003860 storage Methods 0.000 claims description 51
- 230000007704 transition Effects 0.000 claims description 38
- 230000004888 barrier function Effects 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 230000014759 maintenance of location Effects 0.000 claims description 5
- 150000004767 nitrides Chemical group 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
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- 239000000126 substance Substances 0.000 claims 1
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- 229910000618 GeSbTe Inorganic materials 0.000 description 1
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Abstract
The invention discloses a three-dimensional phase change memory structure and a manufacturing structure. The phase change memory unit adopts an MOS tube as a gate tube; the three-dimensional phase change memory structure is characterized in that three-dimensional phase change unit channels are vertical, so that multi-layer stacking, namely 32-96 layers stacking of a phase change memory can be achieved; and high integration density and high capacity memory is achieved. According to the three-dimensional phase change memory structure, the phase change material is an antimony-based material; antimony is doped with silicon, aluminum, tungsten, titanium, nickel and the like; the antimony-based material can be deposited in a chemical vapor deposition manner to achieve multi-layer stacking of the phase change memory; the performance of the phase change material, for example, Si<x>Sb can be changed due to different doped silicon content; and high-speed reading and writing can be achieved through controlling the doping content.
Description
Technical field
The present invention relates to memory area, particularly relate to a kind of three-dimensional phase change memory structure and manufacture method.
Background technology
Semiconductor memory is mainly with speed, and power consumption, price, cycle life and the index such as non-volatile weigh its level.Current existing many semiconductor memory technologies, comprise volatile storage technology as SRAM and DRAM, and nonvolatile storage technologies (as EEPROM, Flash, ferroelectric memory and phase transition storage etc.).These technology have met a series of application, current industry is still constantly exploring new memory technology, find a kind of desirable, based on the semiconductor technology of silicon materials, can be used for producing in enormous quantities, make its memory property have high capacity low cost, high speed and data retention is good, reliability is high again simultaneously, and operating voltage is low, the memory that power consumption is little.
Phase transition storage is a kind of novel nonvolatile memory, be considered to be most likely at alternative flash memory in the future and become main flow nonvolatile memory, it is low that it has operating voltage, reading speed is fast, can bit manipulation, erasable speed far away faster than flash memory, manufacturing process simple and with the feature such as now ripe CMOS technology is compatible, thus its memory cell can be easy to be contracted to less size, meet the demand of high density of integration.
The past high speed of current memory, high density of integration, the future development that memory capacity is large, arising at the historic moment of 3DNAND technology.3DNAND is a kind of emerging flash type, by stacked memory cell being solved the restriction that plane N AND brings together.The NAND of planar structure, close to its actual extended limit, brings severe challenge to semiconductor memory industry.New 3DNAND technology, vertical stacking multi-layer data memory cell, possesses remarkable precision.Based on this technology, memory capacity can be created than the memory device of similar NAND technology up to several times.This technology can be supported in less space content and receive more high storage capacity, and then brings very large cost savings, energy consumption to reduce, and significantly performance boost to meet numerous consumer mobile device and to require the demand that the most harsh enterprise disposes comprehensively
Phase transition storage is also developing toward three-dimensional, due to the technical bottleneck of phase-change material, the stacking memory cell number of plies of three-dimensional phase transition storage is far smaller than 3DNAND structure, the present invention proposes a kind of new phase-change material, and combine the characteristic of the phase-change material proposed, design one can realize high density of integration, jumbo three-dimensional phase change memory structure.
Summary of the invention
Because the above-mentioned defect of prior art, technical problem to be solved by this invention be how in three dimensions stacked memory cells to realize the jumbo three-dimensional phase transition storage of high density of integration.
For achieving the above object, the invention provides a kind of three-dimensional phase transition storage, adopt metal-oxide-semiconductor as gate tube, phase-change material is antimony based compound, doped silicon, aluminium, tungsten, titanium, nickel etc.
Further, three-dimensional phase change cells channel vertical, can realize 32 ~ 96 layers stacking.
Further, the vertical-channel between the memory cell of wearing multiple-level stack is carved in disposable photoetching.
Further, memory cell material is vertically deposited in trench sidewalls.
Further, the trilaminate material deposited inside vertical-channel is polycrystalline silicon channel, phase-change material, and insulating barrier silica.
Further, when described three-dimensional phase transition storage is configured to carry out write operation, provide voltage to the grid of a metal-oxide-semiconductor, can the write of a unit, and when carrying out erase operation, the memory cell in chain structure is all selected, data are wiped free of simultaneously.
Further, the optional Si of phase-change material
xsb, Ti
xsb, Al
xsb, W
xsb etc., doped silicon in antimony, titanium, aluminium, tungsten etc. form storage medium.
Further, of the present invention as Si
xsb material is formed by chemical vapour deposition (CVD), optional SiH
4, SbCl
3, SbCl
5or Sb
3cl
5etc. non-organic metal source of the gas, the source of the gas used in the present invention is as SbCl
3there is low cost and boiling point the features such as 220.3 DEG C.
Further, described three-dimensional phase transition storage has the structure similar to 3DNAND, and its feature is to use the equipment of 3DNAND factory to carry out the production of three-dimensional phase transition storage, can reuse used equipment, and not needing increases new equipment.And the present invention uses antimony based material as storage medium, compared to sulphur system phase-change material, do not produce industrial pollution, the expense of pollutant treatment facility can be saved.
It is characterized in that further, the three-dimensional phase transition storage of the antimony based material that the present invention proposes has high depth-to-width ratio, physical vapour deposition (PVD) is realized by the mode of sputtering usually, deposition of material is uneven, ordinary circumstance can only superpose 4 ~ 8 layers of storage medium, in the present invention, the deposition of phase-change material uses chemical vapour deposition (CVD) mode, can realize the deposition of high aspect ratio structure, realize multiple-level stack.
Present invention also offers a kind of manufacture method of three-dimensional phase transition storage, comprise the following step:
Step one: provide monocrystalline silicon wafer crystal as starting substrates, substrate surface vertical direction replaces stacking some insulating barriers and some sacrifice layers, and utilize chemico-mechanical polishing by surface planarisation, namely the quantity of sacrifice layer be the number of plies of memory;
Step 2: the through hole being formed vertical direction by photoetching and etching technics in insulating barrier and sacrifice layer, and substrate surface is exposed by through hole, described insulating barrier is oxide; Described sacrifice layer is nitride;
Step 3: deposit one deck polysilicon on step 2 basis in through hole groove, is covered the sidewall surfaces that through hole raceway groove exposes, and forms the polysilicon column of vertical direction;
Step 4: on step 3 basis, on polysilicon column, exposure etching, forms the through hole of vertical direction;
Step 5: on step 4 basis, deposited memory material film, described film is that phase-change material is as Si
xsb;
Step 6: on step 5 basis, forms groove in phase-change material surface exposure etching;
Step 7: continue deposition one deck oxide, the phase-change material on both sides is kept apart, vertical through hole is filled full by step 3, four, five, six, seven, forms vertical-channel;
Step 8: by photoetching and etching technics, insulating barrier and sacrifice layer are carved up and down and wear, bottom etches into backing material, between adjacent word line, form gap, and wordline material is kept apart;
Step 9: by photoetching and etching technics, removes the sacrifice layer between adjacent insulating barrier, is exposed by the sidewall of the polysilicon column between neighbouring insulating barrier, and then form gap between adjacent insulating barrier;
Step 10: utilize atomic layer deposition method deposit thin film layers, forms insulated gate electrode, and the sidewall expose vertical-channel and the surface of insulating layer exposing are covered;
Step 11: on step 9 basis, groove surfaces covers by depositing metal layers, and etching removes unnecessary metal level, the part that reservation is positioned between groove gap is as metal gates.
Further, described oxide is silica.
Further, described nitride is silicon nitride;
Further, the film layer material described in step 10 is silica or hafnium oxide.
Further, described metal gate material is tungsten or titanium nitride.
Based in extensive monitor and control facility, security device, the use of the equipment such as audio frequency, video in closed-circuit television, the mutual needs of information, a large amount of data need to store and analyze, this reservoir of will seeking survival is toward high density, Large Copacity future development, the development of 3D memory is gone with the tide of historical development, and becomes the trend that must keep off.
The present invention proposes a kind of three-dimensional phase transition storage based on antimony based compound, has operating voltage low, and reading speed is fast, can bit manipulation, erasable speed far away faster than flash memory, high storage capacity, the features such as integration density is large.The phase-changing memory unit that the present invention proposes adopts metal-oxide-semiconductor as gate tube, and phase-change material is antimony based compound, doped silicon, aluminium, tungsten, titanium etc.
The three-dimensional phase transition storage of the antimony based material that the present invention proposes, has the structure similar to 3DNAND, and its production technology and 3DNAND compatibility, can utilize used equipment to produce.
The antimony based material three-dimensional storage that the present invention proposes, it is characterized in that described three-dimensional phase change cells channel vertical, can realize multiple-level stack, 32 ~ 96 layers stacking, realizes high density of integration, massive store.
Three-dimensional phase transition storage of the present invention, is characterized in that disposable photoetching to carve vertical-channel between the memory cell of wearing multiple-level stack.
Three-dimensional phase transition storage of the present invention, it is characterized in that gate tube is not OTS (ovonic threshold switch (OTS)) diode, and select the design of metal-oxide-semiconductor, the resistance between metal-oxide-semiconductor and phase-change material layers can be regulated by the thickness reducing polycrystalline silicon channel, thus strengthen the driving force of metal-oxide-semiconductor.
Three-dimensional phase transition storage of the present invention, it is characterized in that memory construction is chain structure, metal-oxide-semiconductor and phase change cells are together in parallel, and memory cell material is vertically deposited in trench sidewalls.
Three-dimensional phase transition storage of the present invention, is characterized in that the trilaminate material deposited inside vertical-channel is polycrystalline silicon channel, phase-change material, and insulating barrier silica.
Three-dimensional phase transition storage of the present invention, when it is characterized in that write operation, provides voltage to the grid of a metal-oxide-semiconductor, can the write of a unit, and when wiping operation, the memory cell in chain structure is all selected, and data are wiped free of simultaneously.
Three-dimensional phase transition storage of the present invention, is characterized in that phase-change material is antimony based material, optional Si
xsb, Ti
xsb, Al
xsb, W
xsb etc., doped silicon in antimony, titanium, aluminium, tungsten etc. form phase-change material, and compared to GeSbTe material, the gas of Te element chemical vapour deposition (CVD) is very expensive, generally inapplicable in IC manufacturing.Si of the present invention
xsb material is formed by chemical vapour deposition (CVD), optional SiH
4, SbCl
3, SbCl
5or Sb
3cl
5etc. non-organic metal source of the gas.
Three-dimensional phase transition storage of the present invention, it is characterized in that not selecting physical vapour deposition (PVD), physical vapour deposition (PVD) mode deposits uneven, usual deposition can produce slope, cause raceway groove out of plumb, thus cannot multiple-layer stacked, physical vapour deposition (PVD) ordinary circumstance can only superpose 4 ~ 8 layers.The deposition of phase-change material of the present invention selects chemical vapour deposition (CVD) mode, Material selec-tion Si
xsb, can realize multiple-layer stacked, realize massive store.
Three-dimensional phase transition storage of the present invention, is characterized in that phase-change material is antimony based material, as Si
xsb (be not particularly limited in the present invention, can adulterated al, tungsten, titanium etc.), the difference of doped silicon content can change the performance of material, it is characterized in that, silicone content is higher (as Si
35sb
65) confining force is better, can keep 10 years under 120 ~ 150 DEG C of conditions, read or write speed is slower; Silicone content is lower (as Si
4sb
96), read or write speed can reach for 20 ~ 200 nanoseconds sooner, and confining force reduces comparatively speaking, phase-change material described in the present invention, by regulating silicone content, controlling phase-change memory cell confining force at several days, thus reducing the power consumption of whole storage array.
Be described further below with reference to the technique effect of accompanying drawing to design of the present invention, concrete structure and generation, to understand object of the present invention, characteristic sum effect fully.
Accompanying drawing explanation
Fig. 1 is concrete implementing process manufacturing step one schematic diagram of a preferred embodiment of the present invention;
Fig. 2 is concrete implementing process manufacturing step two schematic diagram of a preferred embodiment of the present invention;
Fig. 3 is concrete implementing process manufacturing step three schematic diagram of a preferred embodiment of the present invention;
Fig. 4 is concrete implementing process manufacturing step four schematic diagram of a preferred embodiment of the present invention;
Fig. 5 is concrete implementing process manufacturing step five schematic diagram of a preferred embodiment of the present invention;
Fig. 6 is concrete implementing process manufacturing step six schematic diagram of a preferred embodiment of the present invention;
Fig. 7 is concrete implementing process manufacturing step seven schematic diagram of a preferred embodiment of the present invention;
Fig. 8 is concrete implementing process manufacturing step eight schematic diagram of a preferred embodiment of the present invention;
Fig. 9 is concrete implementing process manufacturing step nine schematic diagram of a preferred embodiment of the present invention;
Figure 10 is concrete implementing process manufacturing step ten schematic diagram of a preferred embodiment of the present invention;
Figure 11 is concrete implementing process manufacturing step 11 schematic diagram of a preferred embodiment of the present invention.
Embodiment
In conjunction with following concrete implementation step and accompanying drawing, the present invention is described in further detail.Implement process of the present invention, condition, experimental technique etc., except the following content mentioned specially, be universal knowledege and the common practise of this area, be not described for technical characteristics more well known in the art, the present invention is not particularly limited content.
The present invention proposes a present invention and propose a kind of three-dimensional phase transition storage based on antimony based compound, have operating voltage low, reading speed is fast, can bit manipulation, and erasable speed is far away faster than features such as flash memories.The three-dimensional storage structure that the present invention proposes and preparation method describe as Fig. 1 to Figure 11.Eliminate the step of a lot of standard memory manufacturing process in specific embodiments of the invention, mainly emphasize technical scheme of the present invention.
Step one: select the monocrystalline silicon wafer crystal prepared as starting substrates, substrate surface vertical direction replaces stacking some insulating barriers and some sacrifice layers, utilize chemico-mechanical polishing by surface planarisation, namely the quantity of sacrifice layer be the number of plies of memory, as shown in Figure 1, number in the figure 1 is backing material, and label 2 is insulating barriers, and label 3 is sacrifice layers.
Step 2: the through hole first being formed vertical direction by photoetching and etching technics in insulating barrier and sacrifice layer, and substrate surface is exposed by through hole, as shown in Figure 2, described insulating barrier is oxide, the optional silica of material; Described sacrifice layer is nitride, the optional silicon nitride of material.Select in the present invention silica and silicon nitride respectively as insulating barrier and sacrifice layer be due to this bi-material be semiconductor preparation field the material commonly used, have preparation technology's comparative maturity, cost is the advantage such as lower also; Isolation performance simultaneously as the silica of insulating barrier is better, and also can be easy to be removed as the silicon nitride of sacrifice layer.In the present invention, insulating material and expendable material are not particularly limited.
Step 3: deposit one deck polysilicon 4 on step 2 basis in through hole groove, is covered the sidewall surfaces that through hole raceway groove exposes, and forms the polysilicon column of vertical direction, as shown in Figure 3.
Step 4: on step 3 basis, on polysilicon column, exposure etching, forms the through hole of vertical direction, as shown in Figure 4.
Step 5: on step 4 basis, deposited memory material film 5, as shown in Figure 5, in the present invention, storage medium film is phase-change material Si
xsb, the number of silicone content can regulate, and silicone content is higher (as Si
35sb
65) confining force is better, read or write speed is comparatively slow, and silicone content is lower (as Si
4sb
96), read or write speed is faster, and confining force reduces comparatively speaking, phase-change material described in the present invention, by regulating silicone content, controlling phase-change memory cell confining force at several days, thus reducing the power consumption of whole storage array.
Step 6: on step 5 basis, forms groove in phase-change material surface exposure etching, as shown in Figure 6.
Step 7: continue deposition one deck oxide 6, material is silicon dioxide, the phase-change material on both sides is kept apart, vertical through hole is filled full by step 3, four, five, six, seven, form vertical-channel as shown in Figure 7, structure storage medium layer of the present invention, below polycrystalline silicon channel and metal gate, forms the chain structure that metal-oxide-semiconductor is in parallel with phase-change material.
Step 8: by photoetching and etching technics, insulating barrier and sacrifice layer are carved up and down and wear, bottom etches into backing material, between adjacent word line, form gap, wordline material is kept apart, as shown in Figure 8.
Step 9: by photoetching and etching technics, removes the sacrifice layer between adjacent insulating barrier, is exposed by the sidewall of the polysilicon column between neighbouring insulating barrier, and then form gap between adjacent insulating barrier, as shown in Figure 9.
Step 10: first utilize atomic layer deposition method deposit thin film layers 7, material is silica or hafnium oxide, forms insulated gate electrode, and the sidewall expose vertical-channel and the surface of insulating layer exposing are covered, as shown in Figure 10.
Step 11: on step 9 basis, groove surfaces covers by depositing metal layers 8, and etching removes unnecessary metal level, and the part that reservation is positioned between groove gap is as metal gates, and metal material is generally tungsten, titanium nitride, as shown in figure 11.
More than describe preferred embodiment of the present invention in detail.Should be appreciated that the ordinary skill of this area just design according to the present invention can make many modifications and variations without the need to creative work.Therefore, all technical staff in the art, all should by the determined protection range of claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (14)
1. a three-dimensional phase transition storage, is characterized in that, adopt metal-oxide-semiconductor as gate tube, phase-change material is antimony based compound, and doped chemical comprises silicon, aluminium, tungsten, titanium, nickel etc.
2. three-dimensional phase transition storage as claimed in claim 1, is characterized in that, three-dimensional phase change cells channel vertical, can realize 32 ~ 96 layers stacking.
3. three-dimensional phase transition storage as claimed in claim 2, is characterized in that, the vertical-channel between memory cell is carved by disposable photoetching and worn multiple-level stack and formed.
4. three-dimensional phase transition storage as claimed in claim 1, is characterized in that, memory cell material is vertically deposited in trench sidewalls.
5. three-dimensional phase transition storage as claimed in claim 1, is characterized in that, the trilaminate material deposited inside vertical-channel is polycrystalline silicon channel, phase-change material, and insulating barrier silica.
6. three-dimensional phase transition storage as claimed in claim 1, it is characterized in that, when described three-dimensional phase transition storage is configured to carry out write operation, voltage is provided to the grid of a metal-oxide-semiconductor, can the write of a unit, and when carrying out erase operation, the memory cell in chain structure is all selected, data are wiped free of simultaneously.
7. three-dimensional phase transition storage as claimed in claim 1, is characterized in that, described antimony based compound is Si
xsb, Ti
xsb, Al
xsb, W
xsb.
8. three-dimensional phase transition storage as claimed in claim 7, is characterized in that, described Si
xsb material is formed by chemical vapour deposition (CVD), and non-organic metal source of the gas is SiH
4, SbCl
3, SbCl
5or Sb
3cl
5in one.
9. three-dimensional phase transition storage as claimed in claim 1, is characterized in that, described three-dimensional phase transition storage can utilize the equipment of 3DNAND factory to produce.
10. a manufacture method for three-dimensional phase transition storage, is characterized in that, comprises the following step:
Step one: provide monocrystalline silicon wafer crystal as starting substrates, substrate surface vertical direction replaces stacking some insulating barriers and some sacrifice layers, and utilize chemico-mechanical polishing by surface planarisation, namely the quantity of sacrifice layer be the number of plies of memory;
Step 2: the through hole being formed vertical direction by photoetching and etching technics in insulating barrier and sacrifice layer, and substrate surface is exposed by through hole, described insulating barrier is oxide; Described sacrifice layer is nitride;
Step 3: deposit one deck polysilicon on step 2 basis in through hole groove, is covered the sidewall surfaces that through hole raceway groove exposes, and forms the polysilicon column of vertical direction;
Step 4: on step 3 basis, on polysilicon column, exposure etching, forms the through hole of vertical direction;
Step 5: on step 4 basis, deposited memory material film, described film is phase-change material Si
xsb;
Step 6: on step 5 basis, forms groove in phase-change material surface exposure etching;
Step 7: continue deposition one deck oxide, the phase-change material on both sides is kept apart, by step 3, four, five, the vertical through hole of six fills full, forms vertical-channel;
Step 8: by photoetching and etching technics, insulating barrier and sacrifice layer are carved up and down and wear, bottom etches into backing material, between adjacent word line, form gap, and wordline material is kept apart;
Step 9: by photoetching and etching technics, removes the sacrifice layer between adjacent insulating barrier, is exposed by the sidewall of the polysilicon column between neighbouring insulating barrier, and then form gap between adjacent insulating barrier;
Step 10: utilize atomic layer deposition method deposit thin film layers, forms insulated gate electrode, and the sidewall expose vertical-channel and the surface of insulating layer exposing are covered;
Step 11: on step 9 basis, groove surfaces covers by depositing metal layers, and etching removes unnecessary metal level, the part that reservation is positioned between groove gap is as metal gates.
The manufacture method of 11. three-dimensional phase transition storages as claimed in claim 10, is characterized in that, described oxide is silica.
The manufacture method of 12. three-dimensional phase transition storages as claimed in claim 10, is characterized in that, described nitride is silicon nitride.
The manufacture method of 13. three-dimensional phase transition storages as claimed in claim 10, is characterized in that, the film layer material described in step 10 is silica or hafnium oxide.
The manufacture method of 14. three-dimensional phase transition storages as claimed in claim 10, is characterized in that, described metal gate material is tungsten or titanium nitride.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742488A (en) * | 2016-02-26 | 2016-07-06 | 宁波时代全芯科技有限公司 | Phase changing memory and method for fabricating same |
| CN105789437A (en) * | 2016-03-08 | 2016-07-20 | 宁波时代全芯科技有限公司 | Phase change memory and method for fabricating same |
| CN106098721A (en) * | 2016-08-19 | 2016-11-09 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional 1D1R phase-changing memory unit and preparation method thereof |
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| CN105789437B (en) * | 2016-03-08 | 2018-06-19 | 江苏时代全芯存储科技有限公司 | The method for manufacturing phase-change memory |
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| CN107863348A (en) * | 2017-11-01 | 2018-03-30 | 长江存储科技有限责任公司 | A kind of 3D nand memories part and its manufacture method |
| CN107863348B (en) * | 2017-11-01 | 2019-03-12 | 长江存储科技有限责任公司 | A kind of 3D nand memory part and its manufacturing method |
| CN107946313A (en) * | 2017-11-21 | 2018-04-20 | 长江存储科技有限责任公司 | The preparation method and 3D nand flash memories of a kind of 3D nand flash memories stacked structure |
| US20220059549A1 (en) * | 2020-05-05 | 2022-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a mfmis memory device |
| US11925030B2 (en) * | 2020-05-05 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a MFMIS memory device |
| CN112106201A (en) * | 2020-08-13 | 2020-12-18 | 长江先进存储产业创新中心有限责任公司 | Novel integration scheme for forming vertical 3D X-POINT memory at lower cost |
| CN112106201B (en) * | 2020-08-13 | 2024-01-16 | 长江先进存储产业创新中心有限责任公司 | Novel integration scheme for forming vertical 3D X-POINT memory at lower cost |
| CN112909016B (en) * | 2021-03-24 | 2022-06-17 | 长江存储科技有限责任公司 | Three-dimensional memory and preparation method thereof |
| CN112909016A (en) * | 2021-03-24 | 2021-06-04 | 长江存储科技有限责任公司 | Three-dimensional memory and preparation method thereof |
| CN113571544A (en) * | 2021-07-09 | 2021-10-29 | 杭州电子科技大学 | High-integration phase change memory array structure |
| WO2023147700A1 (en) * | 2022-02-07 | 2023-08-10 | 华为技术有限公司 | Memory cell, preparation method, memory, and electronic device |
| WO2023178738A1 (en) * | 2022-03-21 | 2023-09-28 | 长鑫存储技术有限公司 | Memory and method for forming same |
| CN116782644A (en) * | 2023-08-23 | 2023-09-19 | 北京超弦存储器研究院 | Semiconductor device, method of manufacturing the same, and electronic apparatus |
| CN116782644B (en) * | 2023-08-23 | 2023-11-21 | 北京超弦存储器研究院 | Semiconductor device, method of manufacturing the same, and electronic apparatus |
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