CN105304597A - Power Semiconductor Module System and manufacture method thereof - Google Patents

Abstract

The invention relates to a power semiconductor module system with a power semiconductor module and a circuit board. The power semiconductor module has a module housing, a first and a second terminal set. The first connection terminal group has first electrical connection terminals. The second connection terminal group has a second electrical connection terminal. The circuit board has first and second electrodes and is mounted to the power semiconductor module such that in the mounted state each first connection is electrically conductively connected to the first electrode and each second electrical connection is electrically conductively connected to the second electrode. The power semiconductor module system has a first and/or a second insulating carrier. In the case of a first insulating support, it is fixed to the circuit board in the unmounted state and is arranged between the first and second connection terminal groups in the mounted state. In the case of a second insulating carrier fixed to the circuit board in the unmounted state and arranged in the mounted state on the side of the circuit board opposite the power semiconductor module between the first and second connection terminal groups superior.

Description

Power semiconductor module system and manufacturing method thereof

technical field

The invention relates to a power semiconductor module system with a high insulation resistance and a method for producing a power semiconductor module system with a high insulation resistance.

Background technique

There are often very high potential differences between the electrical connections of the power semiconductor modules, which pose a risk of voltage arcing. Sufficient creepage distances must therefore be present, the minimum length of which depends on the highest occurring potential differences and the desired degree of contamination of the surface of the modules lying in line with the connections. Prolonging creepage distances by suitable measures in semiconductor modules is known in principle, but mounting circuit boards on top of power semiconductor modules would cause impermissibly high leakage currents or even lead to plate voltage arc. A planar printed circuit board, for example, again shortens creepage distances that exist, for example, on the modules due to grooves or steps. The mentioned problems can be overcome to a certain extent by a greater distance between the electrical connections, but this will correspondingly increase the inductance between the wires connected to the electrical connections, because at least in the The distance within the area of the connection end must likewise be increased. An increased inductance is however advantageous primarily in fast-switching applications, for example in frequency converters, since impermissibly high induced voltages would result due to strong current changes over time.

Contents of the invention

The object of the present invention is to provide a power semiconductor module system and a method for producing a power semiconductor module arrangement, by means of which an installation along the power semiconductor module can be avoided or can be installed on the power semiconductor module Voltage arcing of the circuit boards above and impermissibly high leakage currents as well as impermissibly short creepage distances.

This object is solved by the power semiconductor module system according to the invention or by the method according to the invention for producing a power semiconductor module arrangement.

Developments and developments of the invention are the subject matter of the subclaims.

A first aspect relates to a power semiconductor module system having a power semiconductor module, a first connection group, a second connection group and a printed circuit board. The power semiconductor module has a module housing with a top side, a first terminal group with at least one first electrical connection, and a second connection group with at least one second electrical connection.

As long as the first connecting terminal group has at least two first electrical connecting terminals, these first electrical connecting terminals will be continuously connected to each other in an electrically conductive manner. Correspondingly, this is also valid for the second connection terminal group, that is, as long as the second connection terminal group has at least two second electrical connection terminals, then these second electrical connection terminals will be continuously electrically connected to each other. connect.

The circuit board with the first electrode and the second electrode can be mounted to the power semiconductor module in such a way that each of the first connection terminals is in electrical conduction with the first electrode in the mounted state ground and such that each of the second connection terminals is electrically conductively connected with the second electrode.

The power semiconductor module system also has a first insulating carrier and/or a second insulating carrier. As long as there is a first insulating support body, the first insulating support body is also fixed to the circuit board in the unmounted state and is arranged on the first connection terminal group and the second connection terminal group in the installed state. between groups of connections. Correspondingly, as long as there is a second insulating support body, the second insulating support body is also fixed to the circuit board in the unmounted state and is arranged on the first connection terminal group and the set in the installed state. The second connection terminal group is arranged on the side of the circuit board opposite to the power semiconductor module.

However, "mounted state" within the scope of the present invention always means that when the circuit board is so fixedly mounted on the semiconductor module, the entire first connection terminal is electrically connected to the first electrode And the entire second connection end is electrically connected to the second electrode. Otherwise it is under "uninstalled state".

A second aspect relates to a method for producing a power semiconductor module arrangement. In this case a power semiconductor module system constructed according to the first aspect is provided and its circuit board is mounted to the power semiconductor module in such a way that in the mounted state each of the first connections is connected to the first electrode electrically conductively connected such that each of the second connection terminals is electrically conductively connected with the second electrode.

Description of drawings

In the following the invention will be explained by means of a number of exemplary embodiments with reference to the attached drawings. Unless otherwise stated, the same reference numerals will describe identical or similarly acting elements having the same function. Indication will be given that the illustrations in the drawings are not to scale. in:

FIG. 1 shows a perspective illustration of a power semiconductor module with a first terminal set and a second terminal set;

Fig. 2 shows a cross-sectional view of a power semiconductor module arrangement before a circuit board provided with two insulating supports is mounted to the power semiconductor module;

FIG. 3 shows a top view of the power semiconductor module shown in FIG. 2;

FIG. 4 shows a cross-sectional view of the power semiconductor module arrangement according to FIG. 2 after mounting a circuit board provided with two insulating supports to the power semiconductor module;

FIG. 5 shows a top view of the power semiconductor module arrangement according to FIG. 4;

FIG. 6 shows a top view of another power semiconductor module arrangement, wherein the circuit board has a greater width than the power semiconductor module;

FIG. 7 shows a top view of a power semiconductor module, wherein a groove running between two terminal groups in the module housing extends completely through the module housing;

FIG. 8 shows a side view of the power semiconductor module according to FIG. 7;

Figure 9 shows a cross-sectional view of a circuit board having two insulating supports mounted thereon, the length of the circuit board being less than the width of the circuit board;

Figure 10 shows a cross-sectional view of a circuit board having two insulating supports mounted thereon, the length of the circuit board corresponding to the width of the circuit board;

Figure 11 shows a cross-sectional view of a circuit board having two insulating supports mounted thereon, the length of the circuit board being greater than the width of the circuit board;

12A shows a cross-sectional view of a circuit board and two insulating supports to be mounted on the circuit board, the two insulating supports respectively have adjustment pins;

Fig. 12B shows a cross-sectional view of the circuit board according to Fig. 12A after the insulating support is installed on the circuit board, wherein the adjustment pins are respectively embedded in the adjustment holes of the circuit board;

13A shows a side view of a circuit board with an insulating support pair having two insulating supports to be mounted to the circuit board, one with a slot and the other with a spring;

Figure 13B shows a part according to Figure 13A according to which the insulating supports of the pair of insulating supports are mounted to the circuit board such that the springs are embedded in the grooves;

Figure 14A shows a side view of two insulating supports connected to each other movably in a state where they form an annular closed unit;

FIG. 14B shows the insulating support according to FIG. 14A in an unfolded state;

Fig. 14C shows after the insulating support body according to Fig. 14B is inserted into the circuit board;

FIG. 14D shows the insulating support according to FIG. 14C after closing the insulating support to a ring-shaped closure around the unit of the circuit board;

Figure 15A shows a side view of two associated insulating supports forming a closed ring;

Figure 15B shows a cross-sectional view of the circuit board after the unit according to Figure 15A has been moved onto the circuit board such that it loops around the circuit board;

FIG. 16 shows a perspective illustration of a section of a circuit board with two pairs of insulating supports, each of which corresponds to the pair of insulating supports according to FIG. 15B mounted to the circuit board. superior;

17 shows a perspective illustration of a section of a semiconductor module with three adjacently arranged terminal groups, wherein the module housing respectively located between two adjacent terminal groups has a grooves of the insulating support;

18A shows a cross-sectional view through the power semiconductor module system during mounting of a circuit board provided with at least one insulating support to the semiconductor module;

FIG. 18B shows a power semiconductor module arrangement configured according to FIG. 18A after assembly, wherein the insulating carrier engages in a groove of the module housing;

19 shows a sectional view through a power semiconductor module arrangement, wherein the circuit board is only provided with an insulating carrier on its side opposite to the semiconductor modules;

20 shows a sectional view through a power semiconductor module arrangement, wherein the circuit board is only provided with an insulating carrier on its side adjacent to the semiconductor modules, while a further insulating carrier is formed on the module housing on the side of the body opposite the circuit board;

21 shows a perspective illustration of a power semiconductor module arrangement with a power semiconductor module on which a circuit board provided with an insulating support is mounted;

FIG. 22 shows an enlarged section of the power semiconductor module arrangement according to FIG. 4 .

detailed description

FIG. 1 shows a power semiconductor module 100 with a module housing 50 . The module housing 50 can be designed arbitrarily. It can consist in particular of an electrically insulating material, for example of plastic. The module housing 50 can be constructed in one piece or can also be assembled from two or more housing parts. In the example shown, the module housing 50 has an annular housing frame 51 on which a housing cover 52 is fitted. In this case, the module housing 50 has a top side 50t on which a plurality of terminal groups 10 , 20 , 30 with one or more electrical connections 1 , 2 or 3 respectively are exposed on the top side. Outside the module housing 50 .

In each of the terminal groups 10 , 20 , 30 , the associated electrical terminals 1 , 2 or 3 are permanently electrically connected to one another, for example via electrical connecting lines inside the module housing 50 . The first connection terminal group 10 also includes one or at least two first electrical connection terminals 1 . In the case of at least two first electrical connection terminals 1 , they are continuously electrically connected to each other. Correspondingly, the second connection terminal group 20 also contains one or at least two second electrical connection terminals 2, which are also continuously electrically connected to each other, and the third connection terminal group 30 also contains one or at least two third electrical connection terminals 2. Connections 3 which, in the case of at least two third electrical connections 3 , are also permanently electrically connected to one another.

In principle, the power semiconductor module 100 has at least two terminal groups 10 , 20 , 30 . Between two of these terminal groups 10 , 20 , 30 —in the current power semiconductor module 100 only by way of example connection terminal groups 10 and 20 —the module housing 50 has an optional groove 55 , the groove proceeds from the top side 50 t into the module housing 50 between the terminal groups 10 and 20 . Corresponding grooves can optionally also be present between the terminal groups 20 and 30 . This will be especially important when the terminal sets 10 and 30 and/or 20 and 30 are in close proximity, since the leakage inductance between all three terminal sets 10, 20 and 30 should be very small .

FIG. 2 shows a cross-sectional view of the power semiconductor module arrangement before mounting a circuit board 200 provided with two insulating supports 11 , 12 onto the power semiconductor module 100 .

The sectional view goes through the power semiconductor module 100 , which for this purpose is only an example of a component not shown inside the module housing 50 . The hatching of the module housing 50 is for illustrative purposes only, showing that it is a cross-sectional view. Wherein, the section passes through the groove 55 and through the electrical connection terminals 1 , 2 and 3 and through the circuit board 300 and the insulating supports 11 and 12 mounted thereon.

At least one of the two dielectric insulating supports 11 and 12 is fixed on the circuit board 200 having the dielectric insulating carrier 230, the first electrode 210 and the second electrode 220, and the circuit board 200 is mounted on The top of the power semiconductor module 100 has previously been fixed. The first electrode 210 and the second electrode 220 are also electrically insulated from each other by a dielectric insulating carrier 230 . The first electrode 210 and the second electrode 220 can be designed, for example, completely or at least largely as flat metal films. They can be run parallel to each other. For example, the circuit board 200 can be a waveguide, wherein the first electrode 110 and the second electrode 220 are basically formed as parallel metal foils, which are connected planarly and materially to the insulating carrier 230 (for example, formed in parallel plate waveguide). In order to achieve a lower electrical resistance, the electrodes 110 , 220 can, for example, consist entirely or largely of copper, and other electrically conductive materials can likewise be used. A printed circuit board 200 is to be understood in particular as a device in which the first electrode 210 and the second electrode 220 are designed as universal buses (“busbars”).

As shown in FIG. 2 , circuit board 200 optionally also has an electrically insulating cover layer 240 , for example with insulating varnish, insulating film, etc., on its side opposite power semiconductor module 100 .

In the installed state, in the absence of insulating supports 11, 12, on the circuit board 200, as long as it is exposed on the first electrode 210 of the via hole 201 (above or below) and as long as it is exposed The second electrode 220 above or below the via hole 2012 forms a creepage distance. This creepage distance is generally shorter than the free distance of the connections above the power semiconductor module 100, since the module connections 1, 2, 3 can also be removed from the bare housing or in the circuit board 200 and solder holes. The via contacts surround the two sides of the circuit board 200 . When the creepage distances between the terminal sets 10, 20, 30 in the installed state are important, then the statement in question exists on the creepage distances, including those associated with the terminal sets 10, 20, 30 Creepage distances between the corresponding terminal groups 10 , 20 , 30 of electrically connected housings, via contacts and solder holes (and the existing housings, via contacts and solder holes).

FIG. 3 shows a top view over the power semiconductor module according to FIG. 2 . It can be seen here that the electrical terminals 1 , 2 , 3 in each terminal group 10 , 20 or 30 are optionally arranged one behind the other in a row and in this case at least two terminal groups 10 , 20 , The electrical connections 1 , 2 , 3 of a row 30 run parallel to one another.

Furthermore, it can be seen that the groove 55 in its direction of progression r extends at least over the length of a row of terminal groups 10 and 20 between which it runs.

FIG. 3 also shows that the groove 55 can optionally have an annular closed side wall 55w formed through the module housing.

FIG. 4 shows a power semiconductor module arrangement 400 , which consists in mounting a circuit board 200 equipped with at least two insulating supports 11 , 12 to a power semiconductor module 100 . Wherever a first insulating support 11 is present, which is mounted on the side of the circuit board 200 opposite to the power semiconductor module 100 , this insulating support is mounted between the corresponding terminal groups 10 , 20 , between these There is also a groove 55 between the terminal groups and is embedded in this groove 55 . If the trench 55 has an annular closed side wall 55 w therein, the side wall 55 w annularly surrounds the first insulating carrier 11 . In so far as a second insulating carrier 12 is present, which is mounted on the side of the printed circuit board 200 opposite to the power semiconductor module 100 , the second insulating carrier is arranged between the terminal groups 10 and 20 .

In the installed state, the first insulating support body 11 and the second insulating support body 12 are also arranged between the first connection terminal group 10 and the second connection terminal group 20 as long as they exist, which will affect the The creepage distance between the group 10 and the second terminal group 20 is extended.

The type of mounting of the insulating supports 11 , 12 to the circuit board 200 is basically any type. They can eg be glued, attached, crimped, screwed or engaged to the circuit board 200 . Alternatively, there can always be a bond with an electrically insulating adhesive, such as silicone, which can completely seal a row between the insulating supports 11, 12 and the circuit board 200 involved, in order to avoid leakage currents , the leakage current is otherwise formed between the first terminal group 10 and the second terminal group 20 through the column.

As can also be seen with the aid of FIGS. 2 and 4 , the insulating supports 11 , 12 mounted to the circuit board 200 optionally have a rim 111 or 121 on the opposite side of the remaining circuit board 200 in order to enlarge the corresponding Adhesive side.

When mounting the circuit board 200 to the power semiconductor module 100 , the first electrical connection 1 is in this case in conductive contact with the first electrode 210 and the second electrical connection 2 is in conductive contact with the second electrode 220 .

In the example of the present invention, only the electrical connections 1, 2 and 3 are shown schematically in FIG. 2 as "solderless electrical connection, without stripped winding connection ; concept, characteristic value, requirements, inspection" of the so-called press-fit connection end ("Press-Fit"), or according to DINEN (IEC) 60352-5, 2008-11: "Connection without solder - Part 5: Press-fit Connections - General requirements, test methods and guidelines for application (IEC60352-5:2008)", both contained in the publication of Beuth Verlag GmbH, Berlin.

Instead of crimp contacts, the electrical connections 1 , 2 , 3 can also be configured as solder connections, wherein in the mounted state the circuit board 200 is on the power semiconductor module 100 such that the first electrical connection 1 is connected to the second An electrode 210 is welded or the second electrical connection end 2 is welded to the second electrode 220 .

Likewise, the electrical connections 1 , 2 , 3 can also be configured as solder connections, wherein, in the installed state, the circuit board 200 is at the power semiconductor module 100 such that the first electrical connection 1 is connected to the first electrode. 210 is welded or the second electrical connection end 2 is welded to the second electrode 220 .

Furthermore, the electrical connections 1 , 2 , 3 can also be designed as screw connections, wherein in the installed state the printed circuit board 200 is on the power semiconductor module 100 such that the first electrical connection 1 is connected to the first electrode 210 by bolts or the second electrical connection end 2 is connected to the second electrode 220 by bolts.

Furthermore, the electrical connections 1 , 2 , 3 can also be configured as spring contacts, wherein the printed circuit board 200 makes the first electrical connection 1 elastic on the power semiconductor module 100 in the installed state. The first electrode 210 is crimped to ground and in the case of forming an electrical through-hole contact connection, or the second electrical connection 2 is crimped to the second electrode 220 elastically and in the case of forming an electrical through-hole contact connection.

FIG. 5 shows a top view of the power semiconductor module arrangement 400 according to FIG. 4 . As can be seen with the aid of FIGS. 4 and 5 , a section of the electrical connection 1 or 2 which is electrically connected to the electrodes 210 and 220 in the assembled state is located on the side of the printed circuit board 200 opposite to the power semiconductor module 100 superior. It is likewise possible that the electrical connections 1 and 2 can also be arranged completely on the side of the printed circuit board 200 opposite the power semiconductor module 100 in the mounted state or at least not on the printed circuit board 200 in relation to the power semiconductor module 100. The power semiconductor module 100 extends over the opposite side.

As can also be seen from FIG. 5 , the circuit board 200 can, in the mounted state, have a greater thickness than the circuit board 200 at least within the scope of the groove 55 in the direction of the groove 55 (see FIG. 3 ). larger or smaller widths as shown in Figure 6. Likewise, in the installed state, the printed circuit board 200 has the same width as the power semiconductor module 100 above the direction of progression of the groove 55 , at least in the area of the groove 55 .

FIG. 7 shows a top view of a power semiconductor module 100 which differs from the power semiconductor module 100 according to FIG. 3 only in that the groove 55 extends completely through the module housing 50 in its direction of progression. This groove 55 is again bounded by the module housing 50 along its direction of progression r. FIG. 8 shows a side view of the semiconductor module according to FIG. 7 .

Furthermore, as shown in FIGS. 9 , 10 and 11 , the insulating supports 11 , 12 have a bulge in the direction of their orientation that is smaller than the width of the circuit board 200 , so that the circuit board 200 exceeds ( FIG. 9 ) The insulating supports 11, 12 are either as wide as the circuit board 200, so that the insulating supports 11, 12 are flush with the circuit board 200 at their two opposite ends (Fig. 10), or are wider than the width of the circuit board 200. be large so that the insulating supports 11 , 12 exceed the circuit board 200 .

12A and 12B, optionally, when one or two insulating supports 11, 12 (as long as they exist), the first insulating support 11 has a first adjustment pin 112 and a second The insulating support 12 has second adjustment pins 122 , which are inserted into corresponding adjustment holes 212 or 222 of the circuit board 200 after the insulating support 11 , 12 is fixed to the circuit board 200 . 12A and 12B show illustrations of the insulating supports 11 and 12 before and after being fixed to the circuit board 200 . Obviously, such adjustment pins of the insulating supports 11 , 12 embedded in the adjusting holes 212 , 222 of the circuit board 200 can also be realized when one of the insulating supports 11 , 12 exists.

As long as the first and second insulating supports 11 and 12 exist, either one of them has a groove 116 and the other has a spring 126 which is embedded in the groove 116 after fixing the two insulating supports 11 and 12 to the circuit board 200 , which will be illustrated by FIGS. 13A and 13B , before and after the circuit board 200 is fixed to the insulating supports 11 and 12 .

According to another option, the first insulating support body 11 and the second insulating support body 12 can be configured as an associated unit, which is shown, for example, in FIG. The insulating supports 11 and 12 move relative to each other before being mounted on the circuit board 200 . For this purpose, the insulating supports 11 and 12 consist, for example, of a single material, such as plastic, and are integrally formed. In such a case, the unit can be produced in a simple manner by casting or injection moulding. The hinge 15 consists of the cut surfaces of the unit, through which a narrow elastic connecting web 16 is formed between the insulating supports 11, 12, capable of taking over the function of the hinge due to the elasticity of the single material .

Fig. 14B shows the unit according to Fig. 14A in a folded state so that the circuit board 200 is embedded in the unit, which will be shown in Fig. 14C. Alternatively, it is possible for the first and the second insulating support body 11 , 12 to have any one of the pins, which are configured according to a fold embedded in an opening in which the other insulating support body 11 , 12 is formed. In this case, the pin 125 optionally has an excess relative to the opening and is pressed into the opening so that a material-dependent connection is formed between the free ends of the insulating supports 11 , 12 .

Likewise, at the free end of any one insulating support body 11 , 12 , a gripping hook is formed, which catches when being folded with the free end of the other insulating support body 11 , 12 .

After folding, the unit and the two insulating supports 11 and 12 form a ring that annularly surrounds the circuit board 200 , which is shown in FIG. 14D . The ring can be integrally constructed as shown, but can comprise multiple parts.

According to another variant shown in FIG. 15A , the unit with the first insulating carrier 11 and the second insulating carrier 12 can be configured as a closed ring, which is moved to the on the circuit board 200 . FIG. 15B shows the unit moved onto the circuit board 200 .

Furthermore, FIG. 16 shows that a plurality of terminal groups 10 , 20 , 30 can be present on the circuit board 200 , of which the terminal groups 10 , 20 , 30 are in two different pairs here on two At least one insulating support 11 - 1 , 12 - 1 or 11 - 2 , 12 - 2 is arranged respectively between the terminal groups 10 and 20 and between the terminal groups 20 and 30 , as previously described. Fixing the insulating support 11 - 1 , 12 - 1 or 11 - 2 , 12 - 2 to the circuit board 200 is achieved as shown in FIG. 16 , which is only exemplary in accordance with FIGS. 13A and 13B . Likewise, all other variants described can also be selected.

Correspondingly, the associated semiconductor module 100 can then also have two trenches 55 - 1 and 55 - 2 , one of which ( 55 - 1 ) is between the two terminal groups 10 and 20 and the other ( 55 - 1 ) -2) Arranged between two connection terminal groups 20 and 30 as shown in FIG. 17 .

FIGS. 18A and 18B also show an exemplary circuit board 200 according to FIG. 15B with at least one first insulating support 11 , such that the first insulating support 11 is just right when the circuit board 200 is mounted on the power semiconductor module 100 into the groove 55.

As can be seen from the example shown in FIG. 19 , only one first insulating carrier 11 can be introduced between the two terminal groups 10 and 20 , which is important when mounting the circuit board 200 to the power semiconductor module 100 . It has been fixed to the circuit board 200 before and it falls onto the side of the circuit board 200 opposite the power semiconductor module 200 and into the groove 55 after mounting the circuit board 200 onto the power semiconductor module 100 .

Regardless of the power semiconductor module arrangement 400 shown in FIG. 19 , the electrical connections 1 , 2 and 3 are not designed as press-in connections and are correspondingly not introduced through the printed circuit board 200 , but instead they are respectively contacted on the circuit board 200 . One of the electrodes 210 or 220 is on the bottom side of the board 200 opposite to the power semiconductor module 100 . For further wiring of the electrodes 220 the circuit board 200 can have via contacts, for example.

According to yet another variant explained with the aid of FIG. 20 , only a second insulating support can be introduced between the two terminal groups 10 and 20 , which has already been fixed to the The circuit board 200 and it is on the side of the circuit board 200 opposite to the power semiconductor module 200 after mounting the circuit board 200 to the power semiconductor module 100 .

In a design of this type, an electrically insulating third insulating carrier 13 can be present, which is formed as a component of the module housing 50 or is connected to it and is connected between the first terminal group 10 and the Set between the second connection terminal groups 20 . After mounting the circuit board 200 on the power semiconductor module 100, the third insulating carrier 13 is located on the side of the circuit board 200 opposite to the power semiconductor module 100 and/or is bonded to one another by means of an adhesive, which The adhesive completely seals a column between the third insulating support 13 and the circuit board 200 .

21 shows an overall view of a power semiconductor module arrangement 400 with a power semiconductor module 100 on which is mounted a circuit board 200 on which a At least one insulating support 11-1, 11-2, 12-1, 12-2. Optionally, the circuit board 200 can be connected to the power semiconductor module 100 by one or more connection means, for example by screws.

According to another option, a heat sink 300 is also mounted on the power semiconductor module 100 on the side opposite to the circuit board 200 . The fastening of the power semiconductor modules 100 to the cooling body 300 can likewise be effected in any desired manner, for example by means of screws.

The design of the circuit board 200 can in principle be of any desired form, and it can be designed, for example, as a printed circuit board or as a laminated busbar, in which the two electrodes 210 and 220 are superimposed electrically insulated from one another to form a composite.

Inside the module housing 50 there can be at least one power semiconductor component, for example a MOSFET, IGBT, JFET, thyristor, diode or any other power component. Using at least one power semiconductor component, the semiconductor module 100 can contain controlled semiconductor switches, a half bridge, two half bridges (for example an H bridge), three half bridges or any other desired arrangement.

During operation of the power semiconductor module arrangement 400 according to the invention, a high potential difference is applied at least between the first electrical connection 1 of the first connection group 10 and the second electrical connection 2 of the second connection group 20, at A first insulating support 11 and/or a second insulating support 20 runs between the two electrical connection ends, and the potential difference is then also applied between the electrodes 210 , 220 . Due to the through-hole contacts or vias 201, 202 of the circuit board 200, this potential difference can also be applied to the section 231 of the insulating carrier 230 between the terminal groups 10 and 20, for example by means of This is shown in FIG. 22 , which shows an enlarged section of the power semiconductor module arrangement according to FIG. 4 . In this sense, however, the stated criteria apply equally to all other designs. For example, the insulating carrier 230 can have optical fibers in a section 231 along which a potential difference falls. When the power semiconductor components are arranged in the module housing 50 , the maximum permissible cut-off voltage is 600 V, so that the operating voltage (DC or AC voltage) between the terminal groups 10 and 20 is 200 V to 450 V. In this case for power semiconductor components with a maximum permissible cut-off voltage of 1200 V, even an operating voltage of 400 V to 900 V can be applied between the terminal groups 10 and 20, and for power semiconductor components with a maximum permissible cut-off voltage of 1700 V For components, even an operating voltage of 600V to 1400V is applied. Brief voltage peaks can in extreme cases reach the maximum permissible operating voltage U _max , which is permissible to be applied between the terminal groups 10 and 20 . In this case, no interference is caused to the electrical components built in the power semiconductor module 100 . Among power semiconductor components it can be, for example, a diode, or a controlled semiconductor component in which the passage of load segments (eg at emitter and collector, at source and drain or between cathode and anode). Suitable controlled power semiconductor components are, for example, IGBTs, MOSFETs, JFETs, thyristors, HEMTs or the like. Depending on the components, the specified maximum permissible cut-off voltage can be the maximum permissible cut-off voltage between emitter and collector, source and drain or cathode and anode. For example, at least one power semiconductor substrate can be arranged in the housing 50 of the power semiconductor module 100 , which has a maximum permissible cut-off voltage of at least 300V or at least 600V.

By using one or more insulating supports 11, 12 it is possible to make, on the one hand, the first connection terminal group 10 and the other end group 10 of the components that are electrically connected to the circuit board 200 (electrodes 210, through-hole contacts 211, solder holes, etc.) The (minimum) spacing between the second terminal group 20 of the components electrically connected to the circuit board 200 (electrodes 220, through-hole contacts 221, solder holes, etc.) land is reduced. The electrode group spacing w specifies the (minimum) distance between the first electrode group and the second electrode group. Wherein, the first electrode group includes all components, which are continuously electrically connected to the first electrical connection end as long as the circuit board 200 is installed on the semiconductor module 100 . Correspondingly, the second electrode group includes all elements which are continuously conductively connected to the second electrical connection terminals 2 of the second connection terminal group 20 as long as the circuit board 200 is mounted on the semiconductor module 100 . Within each electrode group, all electrically conductively interconnected elements can consist of metal. As a result, the elements of the electrode group have essentially the same potential during operation of the power semiconductor arrangement. If a potential difference exists between the first terminal group 10 and the second terminal group 20 during operation of the power semiconductor arrangement, it falls above the electrode group spacing w.

Exemplarily, the spacing to be described below as "connection group spacing" is chosen between the connection groups 10 and 20 of the power semiconductor module 100 with d<U _max *0.0070 mm/V or even with d<U _max * 0.0045mm/V, wherein, Umax is the maximum allowable operating voltage, which is applied to the first connection terminal group 10 and the second terminal group 10 when the power semiconductor module device is running (that is, with the circuit board 200 mounted on the power semiconductor module 100) between the two terminal groups 20 without causing damage to the electronic components built in the power semiconductor module 100 .

Exemplarily, the distance d between two adjacent terminal groups 10 and 20 is smaller than 7 mm (for example in the range of 3 mm to 5 mm) for U _max = _1200V , or smaller than 11.5mm (for example in the range of 5mm to 7mm). Regardless of the standard, the distance d of the voltage applied between the first terminal group 10 and the second terminal group 20 during operation is at least 1.5 mm.

The distance between the electrodes 210 and 220 of the circuit board 200 can be shortened to approximately the minimum distance inside the circuit board 200 horizontally along the insulating position structure (such as an optical fiber) inside the insulating position of the insulating carrier 230, which in order to play a role in the circuit board 200. necessary for adequate electrical insulation. Among them, the failure mechanism in the circuit board 200 is considered, for example, CAF (Conductive Anode Filament). This mechanism works preferably along the fiber optic in the solution of an optical fiber or a fiber optic fiber. Therefore, the electrode group spacing w is not allowed to be too short. Due to the invention, this distance between the electrode groups can be chosen substantially shorter than the minimum creepage distance which is required when the maximum permissible operating voltage Umax is applied between the electrode groups.

In the present invention, the power semiconductor device can be designed in such a way that during operation between the first electrical connection 1 of the first connection group 10 and the second electrical connection 2 of the second connection group 20 Different potentials are applied without a direct segment, which is only routed through the air. In other words, there is no “visual connection” between the first electrical connection 1 of the first connection group 10 and the second electrical connection 2 of the second connection group 20 .

Generally, but not necessarily, the power semiconductor modules according to the invention can have fast-switching switching circuits (eg half-bridges, H-bridges, 3- or multilevel circuits, etc.). Likewise, the power semiconductor module can be part of a fast-switching conversion circuit. For example, two semiconductor modules can each contain a logic circuit with one or more half-bridges electrically connected in parallel, and the logic circuits can be connected as a half-bridge. This logic circuit can then for example form a DC+ disconnect and another form a DC- circuit.

Claims (19)

1. a power semiconductor module system, it has:

Power semiconductor modular (100), described power semiconductor modular:

-there is module housing (50) with top side (50t);

-there is at least one first electric connecting terminal (1) or there are at least two the first link groups (10) of mutually conducting electricity the first electric connecting terminal (1) connected constantly;

-there is at least one second electric connecting terminal (2) or there are at least two the second link groups (20) of mutually conducting electricity the second electric connecting terminal (2) connected constantly;

Circuit board (200), it has the first electrode (210) and the second electrode (220) and is so mounted to described power semiconductor modular (100), makes under the state of installing:

-each first link (1) is connected conductively with described first electrode (210); And

-each second electrical connection (2) is connected conductively with described second electrode (220);

Wherein, described power semiconductor module system also has one or two following insulation support bodies (11,12), and it has:

-the first insulation support body (11), it is also fixed to described circuit board (200) and is arranged between described first link group (10) and described second link group (20) under the state of installing under uninstalled state;

-the second insulation support body (12), it is also fixed to described circuit board (200) and is arranged between described first link group (10) and described second link group (20) under the state of installing on the side contrary with described power semiconductor modular (100) of described circuit board (200) under uninstalled state.

2. power semiconductor module system according to claim 1, wherein:

Described module housing (50) has groove (55), and between described first link group (10) and described second link group (20), from described top side, (the 50t) extends among described module housing (50) described groove; And

Described first insulation support body 911) embed among described groove (55) under the state of installing.

3. power semiconductor module system according to claim 2, wherein, described groove (55) has the sidewall (r) closed circlewise formed by described module housing (50), described sidewall under the state of installing around described first insulation support body (11).

4. power semiconductor module system according to claim 2, wherein, described groove (55) has and moves towards direction (r) and neither also do not move towards module housing (50) described in the cause of direction (r) limited along described described to move towards on direction (r).

5. according to power semiconductor module system in any one of the preceding claims wherein, wherein, described groove (55) have move towards direction (r) and described module housing (50) install state under on direction (r), at least there is among the scope of described groove (55) width larger than described circuit board (200) described trend.

6. power semiconductor module system according to any one of claim 1 to 4, wherein, described groove (55) have move towards direction (r) and described module housing (50) install state under on direction (r), at least there is among the scope of described groove (55) width (r) less than described circuit board (200) described trend.

7. according to power semiconductor module system in any one of the preceding claims wherein, wherein, loop configuration that is that described first insulation support body (11) and described second insulation support body (12) form monolithic together or polylith, it is circlewise around described circuit board (200).

8. according to power semiconductor module system in any one of the preceding claims wherein, wherein, described first insulation support body (11) and described second insulation support body (12) are dependently of each other constructed and are formed a unit, and described unit is circlewise around described circuit board (200).

9. power semiconductor module system according to claim 8, wherein, described unit is constructed to the ring closed, and described ring moves on described circuit board (200).

10. power semiconductor module system according to any one of claim 1 to 8, wherein:

Described first insulation support body (11) has multiple first adjustment pin (112), and described multiple first adjustment pin embeds among the corresponding the first access (212) of described circuit board (200) respectively; And/or

Described second insulation support body (12) has multiple second adjustment pin (122), and described multiple second adjustment pin embeds among corresponding second adjusting hole (222) of described circuit board (200) respectively.

11. according to power semiconductor module system in any one of the preceding claims wherein, wherein:

Described first insulation support body (11) and described circuit board (200) bond; And/or

Described second insulation support body (12) and described circuit board (200) bond.

12. according to power semiconductor module system in any one of the preceding claims wherein, it has the 3rd insulation support body (13), it is constructed to the part of described module housing (50) or is connected with this module housing (50) regularly, and is arranged between described first link group (10) and described second link group (20).

13. power semiconductor module systems according to claim 12, wherein, described 3rd insulation support body (13) and described circuit board (200) bond.

14. according to power semiconductor module system in any one of the preceding claims wherein, wherein, and described first link (1) and described second link (2):

Be constructed to welded ends respectively, wherein, install state under described first link (1) with described first electrode (210) and described second link (2) weld with described second electrode (220); Or

Be constructed to the link that freezes respectively, wherein, under the state of installing, described first link (1) and described first electrode (210) and described second link (2) and described second electrode (220) are freezed;

Be constructed to bolted end respectively, wherein, under the state of installing, described first link (1) and described first electrode (210) and described second link (2) and described second electrode (220) are spirally connected; Or

Be constructed to according to DIN41611-9:1987-12 or according to DINEN (IEC) 60352-5 respectively, the press-in of 2008-11 connects, wherein, each under the state of installing in described first link (1) is pressed into corresponding first opening (201) of described first electrode (210) respectively and each in described second link (2) is pressed into corresponding second opening (202) of described second electrode (220) respectively;

Be constructed to Elastic Contact respectively, wherein, flexibly each under the state of installing in described first link (1) and compressing relative to described first electrode (210) when the crimping being configured with electricity connects and flexibly each in described second link (2) and compressing relative to described second electrode (220) when the crimping being configured with electricity connects.

15. according to power semiconductor module system in any one of the preceding claims wherein, wherein:

Described power semiconductor modular (100) has the working voltage (U of maximum permission _max), described working voltage allows to be applied between described first link group (10) and described second link group (20); And

Described first link group (10) and described second link group (20) have link group spacing (d), described link group spacing at least meets at least one in following standard or combines arbitrarily, as long as these standards are not repelled mutually:

-described link group spacing (d) is less than described maximum permission working voltage (U _max) (0.0070mm/V) doubly;

-described link group spacing (d) is less than described maximum permission working voltage (U _max) (0.0045mm/V) doubly;

-described link group spacing (d) is less than 7mm and described maximum permission working voltage (U _max) be 1200V;

-described link group spacing (d) is less than 11.5mm and described maximum permission working voltage (U _max) be 1700V;

-described link group spacing (d) is at least 1.5mm.

16. 1 kinds of methods for the manufacture of power semiconductor modular device, it has following steps:

Power semiconductor module system according to being constructed according to any one of aforementioned claim is provided;

Circuit board (200) is so mounted to described power semiconductor modular (100), each and described first electrode (210) under the state of installing in described first link (1) is conducted electricity be connected and each and described second electrode (220) in described second link (2) is conducted electricity and is connected.

17. method according to claim 16, wherein:

Described power semiconductor module system has the first insulation support body (11), and it was connected with described circuit board (200) regularly before described circuit board (200) being mounted to described power semiconductor modular (100); And/or

Described power semiconductor module system has the second insulation support body (12), and it was connected with described circuit board (200) regularly before described circuit board (200) being mounted to described power semiconductor modular (100).

18. methods according to claim 16 or 17, wherein:

Described power semiconductor module system (400) has the first insulation support body (11) with the first adjustment pin (112), wherein, described first insulation support body (11) was connected with described circuit board (200) regularly before described circuit board (200) being mounted to described power semiconductor modular (100), thus keep embedding with described the first access (212) among the corresponding the first access (212) making described first adjustment pin (112) embed described circuit board (200) respectively and described circuit board (200) being mounted to described power semiconductor modular (100) period, and/or

Described power semiconductor module system (400) has the second insulation support body (12) with the second adjustment pin (212), wherein, described second insulation support body (12) was connected with described circuit board (200) regularly before described circuit board (200) being mounted to described power semiconductor modular (100), thus keep embedding with described second adjusting hole (222) among corresponding second adjusting hole (222) making described second adjustment pin (122) embed described circuit board (200) respectively and described circuit board (200) being mounted to described power semiconductor modular (100) period.

19. according to claim 16 to the method according to any one of 18, wherein, described power semiconductor module system has the first insulation support body (11) and the second insulation support body (12), and they are connected regularly with described circuit board (200) and are mounted to described circuit board (200) at it and are mutually connected movably before.