CN105280551A

CN105280551A - Manufacturing method for self-protection silicon-based APD array device with temperature compensation

Info

Publication number: CN105280551A
Application number: CN201410301179.4A
Authority: CN
Inventors: 不公告发明人
Original assignee: SINOSEMI ELECTRONICS Inc
Current assignee: SINOSEMI ELECTRONICS Inc
Priority date: 2014-06-30
Filing date: 2014-06-30
Publication date: 2016-01-27

Abstract

The invention relates to a manufacturing method for a self-protection silicon-based APD array device with temperature compensation. The structure of the self-protection silicon-based APD array device comprises an avalanche photodiode (APD) array, a temperature-sensitive diode and a quenching resistor, wherein the avalanche photodiode (APD) array is composed of micro-unit APDs, the quenching resistor is connected with each micro-unit APD in series to form a unit, all the units are connected in parallel to form a linear array, and the linear array device is connected with the temperature-sensitive diode in a surface mounting manner. The APD array of the structure has the advantages of good temperature compensatory, high uniformity, fast response speed, low noise and the like.

Description

There is the manufacture method of the silica-based APD array device of temperature-compensating self-shield

Technical field

The present invention relates to opto-electronic device and manufacture field, particularly a kind of manufacture method with the silica-based APD array device of temperature-compensating self-shield.

Background technology

The photodetector of current application mainly contains two kinds, i.e. PIN photodiode and APD photodiode.PIN photodiode due to manufacturing process simple, advantage with low cost, is widely used in optical fiber communication.But charge carrier does not exist multiplicative process at PIN photodiode device inside, only can produce pair of electrons hole pair to single photon, the requirement of weak optical signal detection cannot be tackled.And after APD photodiodes, electron hole pair can be produced in space charge region, under highfield effect, the charge carrier generation avalanche multiplication effect in semiconductor, amplification of being doubled therein by the single photon signal received, realizes single photon detection.In addition, avalanche photodide also has the advantages such as high-quantum efficiency, high-gain, low-dark current, and and CMOS technology compatibility.Therefore, be widely used in the fields such as photon technology, low light level field measurement.

The avalanche photodide of high-gain is a kind of photodiode with internal amplification, and it is operated in Geiger pattern, and the reverse biased of device is greater than its avalanche breakdown voltage.Incident photon is absorbed in uptake zone to be produced after electron hole pair, accelerates and obtain great kinetic energy under the effect of highfield, by collision semiconductor lattice energy transferring to the electronics in valence band, make it to ionize, thus produce secondary electron hole pair.The electron hole pair of these double ionizations is accelerated again produces more electron hole pair, thus the avalanche current that generation one is very large, forming multiplication factor can reach 10 ⁶above, avalanche current increases mA magnitude rapidly from nA magnitude, realizes effectively amplifying to light signal.

Summary of the invention

The invention provides the structure and manufacture method with the silica-based APD array device of temperature-compensating self-shield, improve the gain of device, inhibit temperature drift on the impact of gain, the operating voltage reducing device.

The invention provides the manufacture method with the silica-based APD array device of temperature-compensating self-shield, comprising: multiple infinitesimal APD composes in parallel APD array, as shown in Figure 1.Wherein, infinitesimal APD vertical structure is N-type heavy doping cathodic region successively, the avalanche region that π type depletion layer is formed, the Chang Kong district of P type heavily doped layer composition, and the uptake zone that doped epitaxial layer is formed, uptake zone is provided with anode metal electrodes.

Further, high-gain APD array of the present invention makes on a silicon substrate;

Further, Chang Kong district and avalanche region adopt ion implantation mode to be formed, and uptake zone is separated with avalanche region by the present invention, can obtain good electron injection, reduce device multiplication noise.

Finally, surface mounting technology SMD is adopted to carry out electrical equipment connection to APD array, temp .-sensitive diodes and cancellation resistance in APD array periphery, as shown in Figure 2.

In APD array of the present invention, infinitesimal APD adopts and reaches flow-through and the structure protecting ring-like compatibility; reach the advantage that flow-through structure has multiplication factor height and low noise; protection ring type structure expands PN junction terminal curvature, and fringe field is concentrated and is weakened, puncture voltage is improved.But avalanche photodide self does not suppress the ability of the avalanche current constantly increased, therefore, bias voltage should be reduced in time and suppress snowslide before avalanche current increases to damage device, namely bias voltage is recovered rapidly while needing additional cancellation resistance that snowslide is terminated, for the detection of next photon is ready.In addition, APD in the course of the work device temperature raises, variations in temperature is the principal element affecting best multiplication factor, multiplication factor changes with temperature and has a great impact device performance, therefore, the mode being controlled adjustment APD operating voltage by temp .-sensitive diodes is compensated temperature, and APD is operated in close to best multiplication factor state.

Accompanying drawing explanation

Fig. 1 is APD array schematic diagram;

Fig. 2 is for having temperature-compensating self-shield APD array structure schematic diagram;

Fig. 3 is infinitesimal APD section of structure;

In Fig. 3: 1-substrate; 2-uptake zone; 3-isolation channel; 4-substrate contact ring; 5-Chang Kong district; 6-avalanche region; 7-cathodic region; 8-cathodic metal electrode; 9-anode metal electrodes; 10-anti-reflection film.

Embodiment

Core concept of the present invention is to provide a kind of manufacture method with the silica-based APD array device of temperature-compensating self-shield.

Below in conjunction with specific embodiment and Fig. 3, the present invention will be further described.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.

First, provide a kind of silicon chip as substrate 1, substrate adopts P-type silicon sheet, doped with boron element.

Secondly, described substrate 1 carries out epitaxial growth, form epitaxial loayer, as the uptake zone 2 of device, epitaxial loayer doped with boron element.

Next, carry out oxide layer deposit successively, photoetching, etching process produce trench window.

Next, carry out trench technique, produce the isolation channel 3 of array APD, and carry out floating sour technique removal surface oxide layer.Isolation channel can prevent the ambient light except light source from disturbing.Polycrystalline silicon deposition process, fills isolation channel.

Next, carry out successively being oxidized, photoetching, produce injection window.Afterwards, carry out boron injection successively, remove photoresist, anneal, form P+ doped layer, the namely substrate contact ring 4 of device.

Next, carry out successively being oxidized, photoetching, produce P type and inject window.Afterwards, carry out boron injection successively, remove photoresist, anneal, form P+ doped layer, the namely Chang Kong district 5 of device.

Next, again carry out photoetching, form N-type and inject window, inject window in N-type and form guard ring at P type window two ends, carry out N+ injection afterwards successively, remove photoresist, anneal.N+ injects and adopts arsenic element, and an arsenic part for injection is formed the boron of original P+ doped layer and compensates, and forms π type depletion layer, namely avalanche region 6; A part forms N+ doped layer, namely cathodic region 7.

Next, carry out oxide layer, PSG, formation sealer successively, protection device surface also reduces tracking current.

Next, carry out photoetching, etching technics successively, produce device contacts hole.

Next, carry out Metal deposition, metal is aluminium.

Next, carry out photoetching, etching technics successively, form cathodic metal electrode 8 anode metal electrodes 9.

Next, carry out oxide layer, PECVD silicon nitride, photoetching, etching process successively, form anti-reflection film 10 in active area.As passivation layer while that anti-reflection film being outside active area.

Next, successively photoetching is carried out to passivation layer, etching technics forms wire contacts window.

Finally, adopt surface mounting technology SMD to carry out electrical equipment to APD array with temp .-sensitive diodes, cancellation resistance in APD array periphery to connect.

APD array structure in the present invention have employed longitudinally two electric field acceleration process, has not only reduced device size but also has greatly improved the sensitivity of APD.Final APD array and temp .-sensitive diodes, cancellation resistance form array device.Because the multiplication factor of APD varies with temperature, adopt the operating voltage of temp .-sensitive diodes to APD with negative temperature coefficient to compensate, reduce the drift of operating voltage temperature.Not only the reverse biased being simultaneously operated in the APD array under Geiger pattern is greater than its avalanche breakdown voltage, exports avalanche current and sharply increases, and external cancellation resistance achieves and controls snowslide and terminate but also can recover bias voltage rapidly, for the detection of next photon is ready.

Claims

1. there is the manufacture method of the silica-based APD array device of temperature-compensating self-shield, it is characterized in that, comprising:

There is provided a kind of silicon chip as substrate slice;

Described substrate slice produces infinitesimal APD forming array;

Surface mounting technology SMD is adopted to carry out electrical equipment connection to APD array, temp .-sensitive diodes and cancellation resistance in APD array periphery.

2. have the silica-based APD array device of temperature-compensating self-shield as requested described in 1, it is characterized in that, described silicon chip is P-type silicon sheet, and array is composed in parallel by infinitesimal APD.

3. as requested described in 2, there is the silica-based APD array device of temperature-compensating self-shield; it is characterized in that; infinitesimal APD longitudinal layer stack structure comprises N-type heavy doping cathodic region successively; the avalanche region that π type depletion layer is formed; the Chang Kong district of P type heavily doped layer composition; the uptake zone that epitaxial loayer is formed, uptake zone is designed with anode metal electrodes.

4. avalanche region longitudinal size is 3 μm-6 μm, and Chang Kong district is of a size of 40 μm-45 μm.

5. the mode that the temp .-sensitive diodes as requested described in 1 controls the power supply of adjustment infinitesimal APD compensates temperature.

6. the cancellation resistance as requested described in 1 makes snowslide terminate to recover bias voltage rapidly, for the detection of next photon is ready simultaneously.