CN105261699A - Manufacturing method of single-chip triaxial anisotropic magnetoresistive sensor - Google Patents
Manufacturing method of single-chip triaxial anisotropic magnetoresistive sensor Download PDFInfo
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- CN105261699A CN105261699A CN201510567197.1A CN201510567197A CN105261699A CN 105261699 A CN105261699 A CN 105261699A CN 201510567197 A CN201510567197 A CN 201510567197A CN 105261699 A CN105261699 A CN 105261699A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 79
- 229910052751 metal Inorganic materials 0.000 claims description 58
- 239000002184 metal Substances 0.000 claims description 58
- 230000004888 barrier function Effects 0.000 claims description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 20
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910000889 permalloy Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 92
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005355 Hall effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Abstract
The invention provides a manufacturing method of a single-chip triaxial anisotropic magnetoresistive sensor. A groove with an inclined side wall is formed in a substrate; a Z-axis magnetoresistive strip and a Z-axis short-circuit electrode are formed on the side wall of the groove; and an X-axis magnetoresistive strip, a Y-axis magnetoresistive strip, an X-axis short-circuit electrode and a Y-axis short-circuit electrode are formed on a plane of the substrate, so that an X-axis magnetic sensing element, a Y-axis magnetic sensing element and a Z-axis magnetic sensing element are integrated on a chip; the structure is simple; the Z-axis magnetic sensing element does not need to be vertically packaged; and the manufacturing method is easy to manufacture, relatively low in cost, good in compatibility with a conventional microelectronics technology and suitable for a mass industrialized production, and has good applicability.
Description
Technical field
The present invention relates to magnetic sensor techniques field, particularly a kind of single-chip tri-axis anisotropic magnetoresistive sensor manufacture method.
Background technology
Anisotropic magnetoresistive (AMR) transducer is Novel magnetic power inhibition effect transducer in modern industry, it is just becoming and is becoming more and more important, and is applied in the parking sensor in the electronic compass especially in smart mobile phone and automobile industry transducer, angular transducer, ABS (automatic breaking system) transducer and tyre pressure sensor etc.Except anisotropic magnetoresistive (AMR) transducer, the current major technique of magnetic sensor also has hall effect sensor, giant magnetoresistance (GMR) transducer, tunnel magnetoresistive (TMR) transducer, but because AMR transducer has the sensitivity more much higher than hall effect sensor, and technology is more ripe than GMR and TMR transducer on realizing, therefore anisotropic magnetoresistive (AMR) sensor application is more extensive than the application of other Magnetic Sensors.
But inventor finds, the X-axis of current AMR transducer, Y-axis, Z axis are independently formed separately, and then be packaged together, and need more making step, make AMR sensing system processing cost costly.
Summary of the invention
The object of the present invention is to provide a kind of single-chip tri-axis anisotropic magnetoresistive sensor, to solve existing three axle anisotropic magnetoresistive sensor complex manufacturing technology, problem that processing cost is high.
For solving the problems of the technologies described above, the invention provides a kind of single-chip tri-axis anisotropic magnetoresistive sensor manufacture method, comprising:
The substrate that one comprises X-axis region, Y-axis region, Z axis region is provided;
In the Z axis region of described substrate, form groove, described groove has the sidewall of inclination;
Form insulating barrier, described insulating barrier covers described substrate and groove;
Form magnetic resistance bar, described magnetic resistance bar comprises the X-axis magnetic resistance bar be formed on described X-axis region, is formed at the Y-axis magnetic resistance bar on described Y-axis region and is formed at the Z axis magnetic resistance bar at least one sidewall of described groove;
Form short-circuiting electrode and metal connecting line, described short-circuiting electrode comprise be formed on described X-axis magnetic resistance bar and with its X-axis short-circuiting electrode intersected, be formed on described Y-axis magnetic resistance bar and with its Y-axis short-circuiting electrode intersected and to be formed on described Z axis magnetic resistance bar and with its Z axis short-circuiting electrode intersected, described metal connecting line comprise connect adjacent X-axis magnetic resistance bar X-axis metal connecting line, connect the Y-axis metal connecting line of adjacent Y-axis magnetic resistance bar and connect the Z axis metal connecting line of adjacent Z axis magnetic resistance bar;
Form separator, described separator covers described short-circuiting electrode, metal connecting line and insulating barrier, is formed with through hole in described separator;
Form Set-Reset current strap, described Set-Reset current strap is formed on described separator and perpendicular to described X-axis magnetic resistance bar, Y-axis magnetic resistance bar and Z axis magnetic resistance bar, described Set-Reset current strap is electrically connected with described X-axis magnetic resistance bar, Y-axis magnetic resistance bar and Z axis magnetic resistance bar by described through hole;
Form passivation layer, described passivation layer covers described separator, is formed with the bonding window exposing described Set-Reset current strap in described passivation layer.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, the cross sectional shape of described groove is inverted trapezoidal, and the angle of inclination of described recess sidewall is 30 ° ~ 60 °.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, the silicon substrate of described substrate to be crystal orientation be <100>.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, described Z axis magnetic resistance bar is positioned on two sidewalls of described groove.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, described Z axis magnetic resistance bar is positioned on a sidewall of described groove.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, the forming process of described groove comprises:
Using plasma strengthens chemical vapor deposition method deposit hard mask layer on substrate;
Adopt photoetching and the graphical described hard mask layer of etching technics;
Tetramethyl ammonium hydroxide solution is adopted to corrode described substrate;
Described hard mask layer is all removed to form described groove.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, described insulating barrier comprises the silicon oxide layer and silicon nitride layer that are formed successively.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, the forming process of described magnetic resistance bar comprises:
Sputtering technology is adopted to form magneto-resistive layer on described insulating barrier;
Described magneto-resistive layer applies photoresist;
By the graphical described photoresist of photoetching process;
Described magneto-resistive layer is etched to form magnetic resistance bar by etching technics.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, described magneto-resistive layer comprises the tantalum layer, permalloy layer and the tantalum nitride layer that are formed successively.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, the angle of described X-axis short-circuiting electrode and X-axis magnetic resistance bar, described Y-axis short-circuiting electrode and Y-axis magnetic resistance bar, described Z axis short-circuiting electrode and Z axis magnetic resistance bar is 45 degree.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, described Z axis short-circuiting electrode extends upwardly on the table top near described groove, and extends downward the subregion of described groove bottom wall.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, described X-axis metal connecting line is snakelike be connected with Y-axis magnetic resistance bar, described Z axis metal connecting line with Z axis magnetic resistance bar with X-axis magnetic resistance bar, described Y-axis metal connecting line.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, described short-circuiting electrode and metal connecting line comprise the titanium nitride layer, titanium layer and the aluminum metal layer that are formed successively.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, the forming process of described short-circuiting electrode and metal connecting line comprises:
Described insulating barrier and magnetic resistance bar apply photoresist;
By the graphical described photoresist of photoetching process to form short-circuiting electrode graphical window and metal connecting line window;
Backwash technique is adopted to clean described magnetic resistance bar surface;
Sputtering technology is adopted to form titanium nitride layer on described photoresist;
Evaporation technology is adopted to form titanium layer and aluminum metal layer on described titanium nitride layer;
Adopt photoresist stripping process, peel off the titanium nitride layer of described photoresist and top thereof, titanium layer and aluminum metal layer, to form short-circuiting electrode and metal connecting line.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, described Set-Reset current strap comprises the titanium nitride layer and aluminum metal layer that are formed successively.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, the forming process of described Set-Reset current strap comprises:
Sputtering technology is adopted to form titanium nitride layer and aluminum metal layer on the separator being formed with through hole;
Described aluminum metal layer applies photoresist;
By the graphical described photoresist of photoetching process;
Described titanium nitride layer and aluminum metal layer is etched, to form described Set-Reset current strap by etching technics.
Optionally, in the manufacture method of described single-chip tri-axis anisotropic magnetoresistive sensor, the material of described separator and passivation layer is silica.
Compared with prior art, the present invention has the following advantages: form the groove with sloped sidewall in the substrate, and on the sidewall of described groove, form Z axis magnetic resistance bar and Z axis short-circuiting electrode, the plane of described substrate is formed X, Y-axis magnetic resistance bar and X, Y-axis short-circuiting electrode, so by a single die integrated for X, Y, Z axis magnetic sensing elements, structure is simple, Z axis magnetic sensing elements is without the need to vertical encapsulation, be easy to manufacture, cost is lower, and with traditional microelectronic technique compatibility is good, be applicable to mass industrialized production, with a wide range of applications.
Accompanying drawing explanation
In order to content of the present invention is better described, below in conjunction with accompanying drawing, simple explanation is done to embodiment.Accompanying drawing is the schematic diagram of idealized embodiments of the present invention, in order to clear expression, is exaggerated the thickness in layer and region, but should not be considered to as schematic diagram the proportionate relationship strictly reflecting physical dimension.Illustrated embodiment should not be considered to the given shape being only limitted to the region shown in figure.Expression in figure is schematic, should not be considered to limit the scope of the invention.Wherein:
Figure 1A is the schematic top plan view after forming groove in the embodiment of the present invention one;
Figure 1B is the generalized section after forming groove in the embodiment of the present invention one;
Fig. 2 A is the schematic top plan view after forming insulating barrier in the embodiment of the present invention one;
Fig. 2 B is the generalized section after forming insulating barrier in the embodiment of the present invention one;
Fig. 3 A is the schematic top plan view after forming X, Y, Z axis magnetic resistance bar in the embodiment of the present invention one;
Fig. 3 B is the generalized section after forming X, Y, Z axis magnetic resistance bar in the embodiment of the present invention one;
Fig. 4 A is the schematic top plan view after forming X, Y, Z axis short-circuiting electrode and metal connecting line in the embodiment of the present invention one;
Fig. 4 B is the generalized section after forming X, Y, Z axis short-circuiting electrode and metal connecting line in the embodiment of the present invention one;
Fig. 5 A is the schematic top plan view after forming separator in the embodiment of the present invention one;
Fig. 5 B is the generalized section after forming separator in the embodiment of the present invention one;
Fig. 6 A is the schematic top plan view after forming Set-Reset current strap in the embodiment of the present invention one;
Fig. 6 B is the generalized section after forming Set-Reset current strap in the embodiment of the present invention one;
Fig. 7 A is the schematic top plan view after forming passivation layer in the embodiment of the present invention one;
Fig. 7 B is the generalized section after forming passivation layer in the embodiment of the present invention one;
Fig. 8 is the schematic flow sheet of single-chip tri-axis anisotropic magnetoresistive sensor manufacture method in the embodiment of the present invention one;
Fig. 9 A is the schematic top plan view of single-chip tri-axis anisotropic magnetoresistive sensor in the embodiment of the present invention two;
Fig. 9 B is the generalized section of single-chip tri-axis anisotropic magnetoresistive sensor in the embodiment of the present invention two.
Embodiment
Below in conjunction with the drawings and specific embodiments, the single-chip tri-axis anisotropic magnetoresistive sensor manufacture method that the present invention proposes is described in further detail.
Embodiment one
With reference to shown in accompanying drawing 8, and in conjunction with Figure 1A ~ 7B, the single-chip tri-axis anisotropic magnetoresistive sensor manufacture method of the present embodiment, comprises the steps:
Step S10 a: substrate 100 is provided, described substrate 100 comprises X-axis region 100a, Y-axis region 100b, Z axis region 100c;
Step S11: form groove 110 in the Z axis region 100c of described substrate 100, described groove 110 has the sidewall 110a of inclination;
Step S12: form insulating barrier 120, described insulating barrier 120 is formed on described substrate 100 and groove 110 thereof;
Step S13: form magnetic resistance bar, described magnetic resistance bar comprises X-axis magnetic resistance bar 131 on the insulating barrier 120 that is formed on described X-axis region 100a, be formed on described Y-axis region 100b insulating barrier 120 on Y-axis magnetic resistance bar 132 and Z axis magnetic resistance bar 133-1,133-2 on being formed on described groove 110 sidewall insulating barrier 120;
Step S14: form short-circuiting electrode and metal connecting line, described short-circuiting electrode comprise be formed on X-axis magnetic resistance bar 131 and with its X-axis short-circuiting electrode 141 intersected, to be formed on Y-axis magnetic resistance bar 132 and with its Y-axis short-circuiting electrode 142 intersected and be formed at Z axis magnetic resistance bar 133-1, 133-2 upper and with its Z axis short-circuiting electrode 143 intersected, described metal connecting line comprises the X-axis metal connecting line 151 connecting adjacent X-axis magnetic resistance bar 131, connect the Y-axis metal connecting line 152 of adjacent Y-axis magnetic resistance bar 132 and connect adjacent Z axis magnetic resistance bar 133-1, the Z axis metal connecting line 153 of 133-2,
Step S15: form separator 160, described separator 160 covers described short-circuiting electrode, metal connecting line and insulating barrier 120, is formed with through hole 160 ' in described separator 160;
Step S16: form Set-Reset current strap 170, described Set-Reset current strap 170 to be formed on described separator 160 and perpendicular to described X, Y, Z axis magnetic resistance bar 131,132,133-1,133-2, described Set-Reset current strap 170 by described through hole 160 ' and described X, Y, Z axis magnetic resistance bar 131,132,133-1,133-2 be electrically connected;
Step S17: form passivation layer 180, described passivation layer 180 covers described separator 160, is formed with the bonding window 180 ' exposing described Set-Reset current strap 170 in described passivation layer 180.
Below in conjunction with accompanying drawing, single-chip tri-axis anisotropic magnetoresistive sensor that the present invention proposes and preparation method thereof is described in further detail.It should be noted that, in order to easy and clearly understand the structure of described single-chip tri-axis anisotropic magnetoresistive sensor, profile all adopts the form that simplifies very much and all uses non-ratio accurately, is only schematically indicate all parts.
As shown in Figure 1A ~ 1B, perform step S10, a substrate 100 is provided.Described substrate 100 comprises X-axis region 100a, Y-axis region 100b, Z axis region 100c.The crystal orientation of described substrate 100 is such as <100>.Described substrate 100 can be silicon substrate, and further, it can be the silicon substrate of N-type doping, also can be the silicon substrate of P type doping, or the intrinsic silicon substrate of undoped.
Continue with reference to Figure 1A ~ 1B, perform step S11, in described substrate 100, form groove 110, described groove 110 has the sidewall 110a of inclination.
For succinctly, Figure 1A shows two rows totally 4 grooves 110, and only schematically depict a groove 110 in Figure 1B.Wherein, the cross sectional shape of groove 110 is inverted trapezoidal wide at the top and narrow at the bottom, its degree of depth is such as 4 ~ 6 μm, the angle of the tilt angle theta of sidewall 110a and sidewall 110a and diapire 110b extended line is 30 ° ~ 60 °, preferably 54.74 °, less in this angle low groove etching difficulty, and can ensure that successive recesses sidewall forms the better effects if of Z axis magnetic resistance bar.
In the present embodiment, the silicon substrate of described substrate to be crystal orientation be <100>, thus adopt conventional silicon etching process to form groove, technique is simple, and cost is low.Specifically, the method that groove 110 is formed comprises:
First, using plasma strengthens chemical vapor deposition (PECVD) technique deposit one hard mask layer (not shown) on the substrate 100, and to be such as thickness be described hard mask layer
silicon oxide layer;
Then, photoetching and the graphical described hard mask layer of etching technics is adopted, by clean for the hard mask layer etching for forming groove 110 position;
Next, adopt Tetramethylammonium hydroxide (TMAH) solution corrosion for forming the substrate 100 of groove 110 position;
Finally, the hard mask layer on substrate 100 surface is all removed, thus form described groove 110.
As shown in Fig. 2 A ~ 2B, perform step S12, the substrate 100 being formed with groove 110 forms insulating barrier 120, in order to prevent electric leakage.In preferred version, described insulating barrier 120 comprises the silicon oxide layer and silicon nitride layer that are formed successively.Described silicon oxide layer is such as formed by LPCVD technique, and thickness is
described silicon nitride layer is such as formed by pecvd process, and thickness is
adopt the insulating barrier of above-mentioned double-layer structure, conformality is (effect namely retaining groove pattern is better) better, and, silicon nitride layer grows magneto-resistive layer, be conducive to magneto-resistive layer along the growth of <111> crystal orientation, the magnetic sensitive characteristic of magneto-resistive layer is better.
As shown in Fig. 3 A ~ 3B, perform step S13, insulating barrier 120 is formed X-axis magnetic resistance bar 131, Y-axis magnetic resistance bar 132, Z axis magnetic resistance bar 133-1,133-2.Wherein Z axis magnetic resistance bar 133-1,133-2 is arranged on the insulating barrier 120 of two relative sidewalls of groove 110, namely Z axis magnetic resistance bar 133-1,133-2 is arranged on the 100c of Z axis region, and X, Y-axis magnetic resistance bar 131,132 are arranged on X-axis region 100a and Y-axis region 100b.The front arrangement schematic diagram of X, Y, Z axis magnetic resistance bar as shown in fig. 3 a, wherein schematically depict 4 X-axis magnetic resistance bars, 131,4 Y-axis magnetic resistance bars, 132,4 Z axis magnetic resistance bar 133-1,4 Z axis magnetic resistance bar 133-2, be understandable that, the quantity of magnetic resistance bar and arrangement mode are not limited to above-mentioned explanation.
In the present embodiment, X, Y, Z axis magnetic resistance bar 131,132, the method that formed of 133-1,133-2 comprises:
First, insulating barrier 120 forms magneto-resistive layer (not shown); In preferred version, described magneto-resistive layer comprises tantalum (Ta) layer, the permalloy (Ni that are formed successively
0.8fe
0.2) layer, tantalum nitride (TaN) layer, described tantalum (Ta) layer as guide layer, in order to guide as the permalloy (Ni of mistor layer
0.8fe
0.2) layer grows along 111 directions, to realize anisotropy magnetosensitive resistance characteristic, described tantalum nitride layer then as protective layer, in order to protect the permalloy (Ni played a crucial role
0.8fe
0.2) layer; By the magneto-resistive layer of the above-mentioned sandwich structure of method deposit of magnetron sputtering, sputter temperature is lower than 300 DEG C, and wherein, the thickness of tantalum layer is such as
the thickness of permalloy layer is such as
the thickness of tantalum nitride layer is such as
Then, described magneto-resistive layer applies photoresist, the thickness of photoresist is such as 1.0 ~ 2.0 μm, described magneto-resistive layer is etched again by photoetching and etching technics, specifically can adopt plasma etching or ion beam milling etching, then remove photoresist, formed X, Y, Z axis magnetic resistance bar 131,132,133-1,133-2.
As shown in Fig. 4 A ~ 4B, perform step S14, form X-axis short-circuiting electrode 141, Y-axis short-circuiting electrode 142, Z axis short-circuiting electrode 143, X-axis metal connecting line 151, Y-axis metal connecting line 152, Z axis metal connecting line 153.Above-mentioned X, Y, Z axis short-circuiting electrode 141,142,143, in order to change the sense of current in magnetic resistance bar, makes it within the scope of surveyed magnetic field intensity, have linear output value.
Wherein, described X-axis short-circuiting electrode 141 to be formed on X-axis magnetic resistance bar 131 and to intersect with it, described Y-axis short-circuiting electrode 142 to be formed on Y-axis magnetic resistance bar 132 and to intersect with it, and it is upper and intersect with it that described Z axis short-circuiting electrode 143 is formed at Z axis magnetic resistance bar 133-1,133-2.
With reference to figure 4B, and in conjunction with shown in Figure 1A ~ 1B, Z axis short-circuiting electrode 143 covers the insulating barrier on groove 110 sidewall 110a, and extend upwardly on the table top near groove 110, extend downward the subregion of groove 110 diapire 110b simultaneously, be conducive to the making of short-circuiting electrode (BarberPole) like this.
In order to obtain preferably linear convergent rate effect, described X-axis short-circuiting electrode 141 is 45 degree with Y-axis magnetic resistance bar 132, Z axis short-circuiting electrode 143 with the angle of Z axis magnetic resistance bar 133-1,133-2 with X-axis magnetic resistance bar 131, Y-axis short-circuiting electrode 142.
Continue with reference to shown in figure 4B, described X-axis metal connecting line 151 is in order to connect adjacent X-axis magnetic resistance bar 131, described Y-axis metal connecting line 152 is in order to connect adjacent Y-axis magnetic resistance bar 132, and described Z axis metal connecting line 153 is in order to connect adjacent Z axis magnetic resistance bar 133-1,133-2.Preferably, X-axis metal connecting line 151 and the snakelike interconnection of X-axis magnetic resistance bar 131, Y-axis metal connecting line 152 and the snakelike interconnection of Y-axis magnetic resistance bar 132, Z axis metal connecting line 153 and the snakelike interconnection of Z axis magnetic resistance bar 133-1,133-2, so can make to do more mistor bar, enhance device susceptibility in unit are.
In the present embodiment, the method that X, Y, Z axis short-circuiting electrode 141,142,143 and X, Y, Z axis metal connecting line 151,152,153 are formed comprises:
First, described insulating barrier 120 and X, Y, Z axis magnetic resistance bar 131,132,133-1,133-2 apply photoresist, photoresist thickness is such as 1 ~ 3 μm;
Then, short-circuiting electrode graphical window and metal connecting line window is formed by photoetching process;
Then, backwash technique is adopted to clean magneto-resistive layer surface;
Then, sputtering diffusion impervious layer, avoids follow-up aluminum metal to spread to insulating barrier 120, prevents electromigration, and improve device stability, described diffusion impervious layer is such as titanium nitride (TiN) layer, and THICKNESS CONTROL exists
between;
Then, on evaporation equipment, adopt evaporation technology evapontte ie meti yer, in preferred version, described metal level comprises the titanium layer and aluminum metal layer that are formed successively, and wherein, the thickness of titanium layer is such as
the thickness of aluminum metal layer is such as
evaporating temperature is lower than 100 DEG C;
Finally, adopt photoresist stripping process, peel off the titanium nitride layer of photoresist and top thereof, titanium layer and aluminum metal layer, form X, Y, Z axis short-circuiting electrode 141,142,143 and X, Y, Z axis metal connecting line 151,152,153.
As shown in Fig. 5 A ~ 5B, perform step S15, described X, Y, Z axis short-circuiting electrode 141,142,143 and X, Y, Z axis metal connecting line 151,152,153 form separator 160.Described separator 160 is such as thickness
silicon oxide layer, and the position of the corresponding X, Y, Z axis metal connecting line 151,152,153 of described separator 160 formed through hole 160 '.
As shown in Fig. 6 A ~ 6B, perform step S15, form Set-Reset current strap 170.Described Set-Reset current strap 170 across described X, Y, Z axis magnetic resistance bar 131,132,133-1,133-2, and perpendicular to X, Y, Z axis magnetic resistance bar 131,132,133-1,133-2.According to the right-hand rule, Set-Reset current strap is orthogonal with mistor bar, after mistor bar is subject to the magnetic fields also larger than its saturation magnetic field intensity, can produces Set-Reset magnetic field, making its initialization by applying Set-Reset electric current.
In the present embodiment, the method that Set-Reset current strap 170 is formed comprises:
First, sputtering current band metal level on the separator 160 being formed with through hole, described current strap metal level comprises the titanium nitride layer and aluminum metal layer that are formed successively, and the thickness of described titanium nitride layer is such as
the thickness of described aluminum metal layer is such as
Then, adopt photoetching and the graphical described current strap metal level of etching technics, form Set-Reset current strap 170.
As shown in Fig. 7 A ~ 7B, perform step S16, described Set-Reset current strap 170 forms passivation layer 180, and form bonding window 180 ' in described passivation layer 180.Described passivation layer 180 is such as thickness
silicon nitride, in corresponding Set-Reset current strap 170, carve bonding window 180 ' by photoetching and etching technics, shown bonding window 180 ' is positioned at the two ends of described Set-Reset current strap 170.It should be noted that, in order to understand the effect of through hole 160 ' and bonding window 180 ', itself and X-axis magnetic resistance bar 131 and X-axis short-circuiting electrode 141 all being represented that, in profile 5B, 6B, 7B, in fact these structures can not be positioned on same level line.
Comprise according to the single-chip tri-axis anisotropic magnetoresistive sensor that above-mentioned manufacture method is formed:
Substrate 100, comprises X-axis region 100a, Y-axis region 100b, Z axis region 100c;
Groove 110, be formed on described Z axis region 100c, described groove 110 has the sidewall 110a of inclination;
Insulating barrier 120, is formed on described substrate 100 and groove 110 thereof;
Magnetic resistance bar, the Y-axis magnetic resistance bar 132 on the insulating barrier 120 comprise the X-axis magnetic resistance bar 131 on the insulating barrier 120 that is formed on described X-axis region 100a, being formed on described Y-axis region 100b and Z axis magnetic resistance bar 133-1,133-2 on being formed on described groove 110 sidewall insulating barrier 120;
Short-circuiting electrode (BarberPole), comprise be formed on X-axis magnetic resistance bar 131 and with its X-axis short-circuiting electrode 141 intersected, be formed on Y-axis magnetic resistance bar 132 and with its Y-axis short-circuiting electrode 142 intersected and be formed at Z axis magnetic resistance bar 133-1,133-2 upper and with its Z axis short-circuiting electrode 143 intersected;
Metal connecting line, comprises the X-axis metal connecting line 151 of the adjacent X-axis magnetic resistance bar 131 of connection, connects the Y-axis metal connecting line 152 of adjacent Y-axis magnetic resistance bar 132 and connect the Z axis metal connecting line 153 of adjacent Z axis magnetic resistance bar 133-1,133-2;
Separator 160, covers described short-circuiting electrode, metal connecting line and insulating barrier 120, is formed with through hole 160 ' in described separator 160;
Set-Reset current strap 170, to be formed on described separator 160 and perpendicular to described X, Y, Z axis magnetic resistance bar 131,132,133-1,133-2, described Set-Reset current strap 170 by described through hole 160 ' and described X, Y, Z axis magnetic resistance bar 131,132,133-1,133-2 be electrically connected;
Passivation layer 180, covers described separator 160, is formed with the bonding window 180 ' exposing described Set-Reset current strap 170 in described passivation layer 180.
Wherein, wherein Z axis region 100c is in order to sense the magnetic field of Z-direction, and X-axis region 100a and Y-axis region 100b is in order to sense the magnetic field of X and Y-direction.
In sum, the present invention forms the groove with sloped sidewall in the substrate, and on the sidewall of described groove, form Z axis magnetic resistance bar and Z axis short-circuiting electrode, the plane of described substrate is formed X, Y-axis magnetic resistance bar and X, Y-axis short-circuiting electrode, so by a single die integrated for X, Y, Z axis magnetic sensing elements, structure is simple, Z axis magnetic sensing elements is without the need to vertical encapsulation, be easy to manufacture, cost is lower, and with traditional microelectronic technique compatibility is good, be applicable to mass industrialized production, with a wide range of applications.
Embodiment two
As shown in Fig. 9 A ~ 9B, the difference of the present embodiment and embodiment one is, only on the insulating barrier 120 of a sidewall of each groove 110, form Z axis magnetic resistance bar 133, X, Y-axis magnetic resistance bar 131,132 are arranged on X-axis region 100a and Y-axis region 100b, and Z axis magnetic resistance bar 133 is arranged on the 100c of Z axis region.The front arrangement schematic diagram of X, Y, Z axis magnetic resistance bar as shown in figure 9, owing to only forming Z axis magnetic resistance bar 133 on the insulating barrier 120 of a sidewall of each groove 110, thus, the Z axis magnetic resistance bar 133 on two adjacent grooves only needs to realize electrical connection by a Z axis metal connecting line 153.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.For device disclosed in embodiment, owing to corresponding to the method disclosed in Example, so description is fairly simple, relevant part illustrates see method part.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (17)
1. a manufacture method for single-chip tri-axis anisotropic magnetoresistive sensor, is characterized in that, comprising:
The substrate that one comprises X-axis region, Y-axis region, Z axis region is provided;
In the Z axis region of described substrate, form groove, described groove has the sidewall of inclination;
Form insulating barrier, described insulating barrier covers described substrate and groove;
Form magnetic resistance bar, described magnetic resistance bar comprises the X-axis magnetic resistance bar be formed on described X-axis region, is formed at the Y-axis magnetic resistance bar on described Y-axis region and is formed at the Z axis magnetic resistance bar at least one sidewall of described groove;
Form short-circuiting electrode and metal connecting line, described short-circuiting electrode comprise be formed on described X-axis magnetic resistance bar and with its X-axis short-circuiting electrode intersected, be formed on described Y-axis magnetic resistance bar and with its Y-axis short-circuiting electrode intersected and to be formed on described Z axis magnetic resistance bar and with its Z axis short-circuiting electrode intersected, described metal connecting line comprise connect adjacent X-axis magnetic resistance bar X-axis metal connecting line, connect the Y-axis metal connecting line of adjacent Y-axis magnetic resistance bar and connect the Z axis metal connecting line of adjacent Z axis magnetic resistance bar;
Form separator, described separator covers described short-circuiting electrode, metal connecting line and insulating barrier, is formed with through hole in described separator;
Form Set-Reset current strap, described Set-Reset current strap is formed on described separator and perpendicular to described X-axis magnetic resistance bar, Y-axis magnetic resistance bar and Z axis magnetic resistance bar, described Set-Reset current strap is electrically connected with described X-axis magnetic resistance bar, Y-axis magnetic resistance bar and Z axis magnetic resistance bar by described through hole;
Form passivation layer, described passivation layer covers described separator, is formed with the bonding window exposing described Set-Reset current strap in described passivation layer.
2. as claim 1 to as described in the manufacture method of single-chip tri-axis anisotropic magnetoresistive sensor, it is characterized in that, the cross sectional shape of described groove is inverted trapezoidal, and the angle of inclination of described recess sidewall is 30 ° ~ 60 °.
3. as claim 1 to as described in the manufacture method of single-chip tri-axis anisotropic magnetoresistive sensor, it is characterized in that, the silicon substrate of described substrate to be crystal orientation be <100>.
4. the manufacture method of single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, described Z axis magnetic resistance bar is positioned on two sidewalls of described groove.
5. the manufacture method of single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, described Z axis magnetic resistance bar is positioned on a sidewall of described groove.
6. the manufacture method of single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, the forming process of described groove comprises:
Using plasma strengthens chemical vapor deposition method deposit hard mask layer on substrate;
Adopt photoetching and the graphical described hard mask layer of etching technics;
Tetramethyl ammonium hydroxide solution is adopted to corrode described substrate;
Described hard mask layer is all removed to form described groove.
7. the manufacture method of single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, described insulating barrier comprises the silicon oxide layer and silicon nitride layer that are formed successively.
8. the manufacture method of single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, the forming process of described magnetic resistance bar comprises:
Sputtering technology is adopted to form magneto-resistive layer on described insulating barrier;
Described magneto-resistive layer applies photoresist;
By the graphical described photoresist of photoetching process;
Described magneto-resistive layer is etched to form magnetic resistance bar by etching technics.
9. the manufacture method of single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, described magneto-resistive layer comprises the tantalum layer, permalloy layer and the tantalum nitride layer that are formed successively.
10. the manufacture method of single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, the angle of described X-axis short-circuiting electrode and X-axis magnetic resistance bar, described Y-axis short-circuiting electrode and Y-axis magnetic resistance bar, described Z axis short-circuiting electrode and Z axis magnetic resistance bar is 45 degree.
The manufacture method of 11. single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, described Z axis short-circuiting electrode extends upwardly on the table top near described groove, and extends downward the subregion of described groove bottom wall.
The manufacture method of 12. single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, described X-axis metal connecting line is snakelike be connected with Y-axis magnetic resistance bar, described Z axis metal connecting line with Z axis magnetic resistance bar with X-axis magnetic resistance bar, described Y-axis metal connecting line.
The manufacture method of 13. single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, described short-circuiting electrode and metal connecting line comprise the titanium nitride layer, titanium layer and the aluminum metal layer that are formed successively.
The manufacture method of 14. single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 13, it is characterized in that, the forming process of described short-circuiting electrode and metal connecting line comprises:
Described insulating barrier and magnetic resistance bar apply photoresist;
By the graphical described photoresist of photoetching process to form short-circuiting electrode graphical window and metal connecting line window;
Backwash technique is adopted to clean described magnetic resistance bar surface;
Sputtering technology is adopted to form titanium nitride layer on described photoresist;
Evaporation technology is adopted to form titanium layer and aluminum metal layer on described titanium nitride layer;
Adopt photoresist stripping process, peel off the titanium nitride layer of described photoresist and top thereof, titanium layer and aluminum metal layer, to form short-circuiting electrode and metal connecting line.
The manufacture method of 15. single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, described Set-Reset current strap comprises the titanium nitride layer and aluminum metal layer that are formed successively.
The manufacture method of 16. single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 15, it is characterized in that, the forming process of described Set-Reset current strap comprises:
Sputtering technology is adopted to form titanium nitride layer and aluminum metal layer on the separator being formed with through hole;
Described aluminum metal layer applies photoresist;
By the graphical described photoresist of photoetching process;
Described titanium nitride layer and aluminum metal layer is etched, to form described Set-Reset current strap by etching technics.
The manufacture method of 17. single-chip tri-axis anisotropic magnetoresistive sensor as claimed in claim 1, it is characterized in that, the material of described separator and passivation layer is silica.
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