CN105164816B - 光伏互连系统、装置和方法 - Google Patents
光伏互连系统、装置和方法 Download PDFInfo
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- CN105164816B CN105164816B CN201480017608.3A CN201480017608A CN105164816B CN 105164816 B CN105164816 B CN 105164816B CN 201480017608 A CN201480017608 A CN 201480017608A CN 105164816 B CN105164816 B CN 105164816B
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361757636P | 2013-01-28 | 2013-01-28 | |
US61/757,636 | 2013-01-28 | ||
PCT/US2014/013348 WO2014117138A1 (en) | 2013-01-28 | 2014-01-28 | Photovoltaic interconnect systems, devices, and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105164816A CN105164816A (zh) | 2015-12-16 |
CN105164816B true CN105164816B (zh) | 2017-03-08 |
Family
ID=51223361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480017608.3A Active CN105164816B (zh) | 2013-01-28 | 2014-01-28 | 光伏互连系统、装置和方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9362433B2 (zh) |
CN (1) | CN105164816B (zh) |
HK (1) | HK1219564A1 (zh) |
WO (1) | WO2014117138A1 (zh) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US8759664B2 (en) | 2009-12-28 | 2014-06-24 | Hanergy Hi-Tech Power (Hk) Limited | Thin film solar cell strings |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
CN107634108B (zh) | 2012-04-17 | 2019-12-13 | 环球太阳能公司 | 积体薄膜太阳能晶胞电池的互连 |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
USD1009775S1 (en) | 2014-10-15 | 2024-01-02 | Maxeon Solar Pte. Ltd. | Solar panel |
USD767484S1 (en) * | 2014-11-19 | 2016-09-27 | Sunpower Corporation | Solar panel |
USD750556S1 (en) * | 2014-11-19 | 2016-03-01 | Sunpower Corporation | Solar panel |
USD933584S1 (en) | 2012-11-08 | 2021-10-19 | Sunpower Corporation | Solar panel |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US20160035907A1 (en) * | 2014-08-04 | 2016-02-04 | Lg Electronics Inc. | Solar cell module |
USD896747S1 (en) | 2014-10-15 | 2020-09-22 | Sunpower Corporation | Solar panel |
USD999723S1 (en) | 2014-10-15 | 2023-09-26 | Sunpower Corporation | Solar panel |
USD933585S1 (en) | 2014-10-15 | 2021-10-19 | Sunpower Corporation | Solar panel |
USD913210S1 (en) | 2014-10-15 | 2021-03-16 | Sunpower Corporation | Solar panel |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
US11554576B2 (en) * | 2017-01-26 | 2023-01-17 | Face International Corporation | Energy harvesting methods for providing autonomous electrical power to mobile devices |
USD780109S1 (en) * | 2015-06-23 | 2017-02-28 | Global Solar Energy, Inc. | Photovoltaic submodule |
USD779426S1 (en) * | 2015-06-23 | 2017-02-21 | Global Solar Energy, Inc. | Photovoltaic submodule |
USD780108S1 (en) * | 2015-06-23 | 2017-02-28 | Global Solar Energy, Inc. | Photovoltaic submodule |
JP1546718S (zh) * | 2015-08-19 | 2019-03-18 | ||
JP1546719S (zh) * | 2015-08-19 | 2019-03-18 | ||
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US10770610B2 (en) | 2015-12-08 | 2020-09-08 | Sunpower Corporation | Photovoltaic module interconnect joints |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
CN106229354A (zh) * | 2016-08-26 | 2016-12-14 | 泰州中来光电科技有限公司 | 一种太阳能电池串及其制备方法和组件、系统 |
US10461685B2 (en) * | 2016-10-04 | 2019-10-29 | Global Solar Energy, Inc. | Foldable photovoltaic assembly with non-perpendicular interconnection |
CN106898671B (zh) * | 2017-02-17 | 2018-07-13 | 武汉三工智能装备制造有限公司 | 光伏电池组件 |
US10329660B2 (en) | 2017-04-07 | 2019-06-25 | Mind Technology Development Limited | Flexible transparent thin film |
US10572089B2 (en) | 2017-07-12 | 2020-02-25 | Mind Technology Development Limited | Sensing film with an integrated structure |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
EP3695237A4 (en) | 2017-10-11 | 2020-12-30 | New Asia Group Holdings Limited | DETECTION FILM WITH INTEGRATED STRUCTURE |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
US20190288638A1 (en) * | 2018-03-15 | 2019-09-19 | The Boeing Company | Rollable solar power module with high packing density |
US11257969B2 (en) | 2018-03-15 | 2022-02-22 | The Boeing Company | Blocking diode board for rollable solar power module |
CN113257935B (zh) * | 2021-05-12 | 2022-07-08 | 常州时创能源股份有限公司 | 光伏电池层用串接组件及其制备方法和应用 |
WO2022260660A1 (en) * | 2021-06-08 | 2022-12-15 | Manaflex, Llc | Customizable solar panel design and manufacturing |
CN113659023B (zh) * | 2021-07-06 | 2023-07-14 | 浙江爱旭太阳能科技有限公司 | Ibc电池组件的叉指状导电背板和ibc电池组件 |
US11981110B2 (en) | 2021-12-21 | 2024-05-14 | Saint-Gobain Performance Plastics Corporation | Multilayer film and method of forming the same |
CN115101628B (zh) * | 2022-06-28 | 2024-10-18 | 苏州方昇光电股份有限公司 | 一种卷对卷太阳能电池制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1231772A (zh) * | 1996-09-26 | 1999-10-13 | 阿克佐诺贝尔公司 | 光电箔的制造方法 |
CN101419990A (zh) * | 2007-10-25 | 2009-04-29 | 上海空间电源研究所 | 柔性薄膜太阳电池组件 |
Family Cites Families (130)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1552078A (zh) | 1967-11-15 | 1969-01-03 | ||
JPS5628383B2 (zh) | 1975-03-25 | 1981-07-01 | ||
US4064552A (en) | 1976-02-03 | 1977-12-20 | Angelucci Thomas L | Multilayer flexible printed circuit tape |
US4254546A (en) | 1978-09-11 | 1981-03-10 | Ses, Incorporated | Photovoltaic cell array |
US4221465A (en) | 1978-09-28 | 1980-09-09 | Rca Corporation | Patching tape for diffractive subtractive filter viewgraphs |
US4318938A (en) | 1979-05-29 | 1982-03-09 | The University Of Delaware | Method for the continuous manufacture of thin film solar cells |
US4400577A (en) | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
DE3280455T3 (de) | 1981-11-04 | 2000-07-13 | Kanegafuchi Kagaku Kogyo K.K., Osaka | Biegsame photovoltaische Vorrichtung. |
US4430519A (en) | 1982-05-28 | 1984-02-07 | Amp Incorporated | Electron beam welded photovoltaic cell interconnections |
EP0112856A1 (de) | 1982-07-05 | 1984-07-11 | Hartag Ag | Einrichtung mit mehreren, photoelektrische elemente enthaltenden tafeln zur erzeugung elektrischen stromes |
US4737379A (en) | 1982-09-24 | 1988-04-12 | Energy Conversion Devices, Inc. | Plasma deposited coatings, and low temperature plasma method of making same |
AU2095083A (en) | 1982-11-09 | 1984-05-17 | Energy Conversion Devices Inc. | Laminated strip of large area solar cells |
JPS604270A (ja) | 1983-06-22 | 1985-01-10 | Hitachi Ltd | 太陽電池の製造方法 |
JPS60123073A (ja) | 1983-12-08 | 1985-07-01 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池 |
US4542255A (en) | 1984-01-03 | 1985-09-17 | Atlantic Richfield Company | Gridded thin film solar cell |
US4697041A (en) | 1985-02-15 | 1987-09-29 | Teijin Limited | Integrated solar cells |
US4617421A (en) | 1985-04-01 | 1986-10-14 | Sovonics Solar Systems | Photovoltaic cell having increased active area and method for producing same |
US4783421A (en) | 1985-04-15 | 1988-11-08 | Solarex Corporation | Method for manufacturing electrical contacts for a thin-film semiconductor device |
US4617420A (en) | 1985-06-28 | 1986-10-14 | The Standard Oil Company | Flexible, interconnected array of amorphous semiconductor photovoltaic cells |
US4652693A (en) | 1985-08-30 | 1987-03-24 | The Standard Oil Company | Reformed front contact current collector grid and cell interconnect for a photovoltaic cell module |
US4713493A (en) | 1985-10-11 | 1987-12-15 | Energy Conversion Devices, Inc. | Power generating optical filter |
US4663828A (en) | 1985-10-11 | 1987-05-12 | Energy Conversion Devices, Inc. | Process and apparatus for continuous production of lightweight arrays of photovoltaic cells |
US4663829A (en) | 1985-10-11 | 1987-05-12 | Energy Conversion Devices, Inc. | Process and apparatus for continuous production of lightweight arrays of photovoltaic cells |
US4642413A (en) | 1985-10-11 | 1987-02-10 | Energy Conversion Devices, Inc. | Power generating optical filter |
US4698455A (en) | 1986-11-04 | 1987-10-06 | Spectrolab, Inc. | Solar cell with improved electrical contacts |
US4746618A (en) | 1987-08-31 | 1988-05-24 | Energy Conversion Devices, Inc. | Method of continuously forming an array of photovoltaic cells electrically connected in series |
US4773944A (en) | 1987-09-08 | 1988-09-27 | Energy Conversion Devices, Inc. | Large area, low voltage, high current photovoltaic modules and method of fabricating same |
US4965655A (en) | 1987-12-10 | 1990-10-23 | Minnesota Mining And Manufacturing Company | Interconnected semiconductor devices |
US5021099A (en) | 1988-08-09 | 1991-06-04 | The Boeing Company | Solar cell interconnection and packaging using tape carrier |
US5118361A (en) | 1990-05-21 | 1992-06-02 | The Boeing Company | Terrestrial concentrator solar cell module |
US5273608A (en) | 1990-11-29 | 1993-12-28 | United Solar Systems Corporation | Method of encapsulating a photovoltaic device |
DE69228079T2 (de) | 1991-02-21 | 1999-09-16 | Angewandte Solarenergie - Ase Gmbh | Photovoltaische Vorrichtung und Solarmodul mit teilweiser Durchsichtigkeit, und Herstellungsmethode |
US5258236A (en) | 1991-05-03 | 1993-11-02 | Ibm Corporation | Multi-layer thin film structure and parallel processing method for fabricating same |
US5176758A (en) | 1991-05-20 | 1993-01-05 | United Solar Systems Corporation | Translucent photovoltaic sheet material and panels |
US5181968A (en) | 1991-06-24 | 1993-01-26 | United Solar Systems Corporation | Photovoltaic device having an improved collector grid |
US5185042A (en) | 1991-08-01 | 1993-02-09 | Trw Inc. | Generic solar cell array using a printed circuit substrate |
US5391235A (en) | 1992-03-31 | 1995-02-21 | Canon Kabushiki Kaisha | Solar cell module and method of manufacturing the same |
US5268037A (en) | 1992-05-21 | 1993-12-07 | United Solar Systems Corporation | Monolithic, parallel connected photovoltaic array and method for its manufacture |
JP2974513B2 (ja) | 1992-09-03 | 1999-11-10 | キヤノン株式会社 | 屋根材一体型太陽電池モジュール |
US5385848A (en) | 1993-09-20 | 1995-01-31 | Iowa Thin Film Technologies, Inc | Method for fabricating an interconnected array of semiconductor devices |
US5460659A (en) | 1993-12-10 | 1995-10-24 | Spectrolab, Inc. | Concentrating photovoltaic module and fabrication method |
US5457057A (en) | 1994-06-28 | 1995-10-10 | United Solar Systems Corporation | Photovoltaic module fabrication process |
US5474621A (en) | 1994-09-19 | 1995-12-12 | Energy Conversion Devices, Inc. | Current collection system for photovoltaic cells |
US5928437A (en) | 1995-02-09 | 1999-07-27 | The Boeing Company | Microarray for efficient energy generation for satellites |
US5547516A (en) | 1995-05-15 | 1996-08-20 | Luch; Daniel | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US20080314433A1 (en) | 1995-05-15 | 2008-12-25 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7732243B2 (en) | 1995-05-15 | 2010-06-08 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US6459032B1 (en) | 1995-05-15 | 2002-10-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US5735966A (en) | 1995-05-15 | 1998-04-07 | Luch; Daniel | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
JP3222361B2 (ja) | 1995-08-15 | 2001-10-29 | キヤノン株式会社 | 太陽電池モジュールの製造方法及び太陽電池モジュール |
DE19652810A1 (de) | 1996-12-18 | 1998-07-02 | Priesemuth W | Verfahren zum Herstellen einer Solarzelle sowie eines Solarmoduls und Solarzelle sowie Solarmodul |
US6148570A (en) | 1998-02-05 | 2000-11-21 | Powerlight Corporation | Photovoltaic building assembly with continuous insulation layer |
JPH11186572A (ja) | 1997-12-22 | 1999-07-09 | Canon Inc | 光起電力素子モジュール |
DE19814780A1 (de) | 1998-04-02 | 1999-07-22 | Ver Glaswerke Gmbh | Fotovoltaisches Bauelement |
US6248948B1 (en) | 1998-05-15 | 2001-06-19 | Canon Kabushiki Kaisha | Solar cell module and method of producing the same |
US7507903B2 (en) | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8222513B2 (en) | 2006-04-13 | 2012-07-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture |
US20120171802A1 (en) | 2006-04-13 | 2012-07-05 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20090111206A1 (en) | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
US20090293941A1 (en) | 2008-06-02 | 2009-12-03 | Daniel Luch | Photovoltaic power farm structure and installation |
US6239352B1 (en) | 1999-03-30 | 2001-05-29 | Daniel Luch | Substrate and collector grid structures for electrically interconnecting photovoltaic arrays and process of manufacture of such arrays |
US7635810B2 (en) | 1999-03-30 | 2009-12-22 | Daniel Luch | Substrate and collector grid structures for integrated photovoltaic arrays and process of manufacture of such arrays |
US20100108118A1 (en) | 2008-06-02 | 2010-05-06 | Daniel Luch | Photovoltaic power farm structure and installation |
US8138413B2 (en) | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8076568B2 (en) | 2006-04-13 | 2011-12-13 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20080011350A1 (en) | 1999-03-30 | 2008-01-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and other optoelectric devices |
US20090107538A1 (en) | 2007-10-29 | 2009-04-30 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
EP1194956A4 (en) | 1999-06-21 | 2005-01-19 | Aec Able Eng Co Inc | SOLAR BATTERY |
US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898054B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US20110067754A1 (en) | 2000-02-04 | 2011-03-24 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US20130052769A1 (en) | 2000-02-04 | 2013-02-28 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898053B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
DE20002827U1 (de) | 2000-02-17 | 2000-05-04 | Röhm GmbH, 64293 Darmstadt | Photovoltaik-Element |
US6310281B1 (en) | 2000-03-16 | 2001-10-30 | Global Solar Energy, Inc. | Thin-film, flexible photovoltaic module |
US7194197B1 (en) | 2000-03-16 | 2007-03-20 | Global Solar Energy, Inc. | Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer |
US6372538B1 (en) | 2000-03-16 | 2002-04-16 | University Of Delaware | Fabrication of thin-film, flexible photovoltaic module |
US6706963B2 (en) | 2002-01-25 | 2004-03-16 | Konarka Technologies, Inc. | Photovoltaic cell interconnection |
US6653718B2 (en) | 2001-01-11 | 2003-11-25 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
FR2831714B1 (fr) | 2001-10-30 | 2004-06-18 | Dgtec | Assemblage de cellules photovoltaiques |
US7365266B2 (en) | 2002-03-12 | 2008-04-29 | United Solar Ovonic Llc | Method and system for mounting photovoltaic material |
US6690041B2 (en) | 2002-05-14 | 2004-02-10 | Global Solar Energy, Inc. | Monolithically integrated diodes in thin-film photovoltaic devices |
US7612283B2 (en) | 2002-07-09 | 2009-11-03 | Canon Kabushiki Kaisha | Solar power generation apparatus and its manufacturing method |
DE10239845C1 (de) | 2002-08-29 | 2003-12-24 | Day4 Energy Inc | Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul |
FR2853624B1 (fr) * | 2003-04-14 | 2005-06-10 | Eads Launch Vehicles | Ensemble d'elements, pliable et deployable, monte a bord d'un engin spatial |
US20050176270A1 (en) | 2004-02-11 | 2005-08-11 | Daniel Luch | Methods and structures for the production of electrically treated items and electrical connections |
US20100193367A1 (en) | 2004-02-11 | 2010-08-05 | Daniel Luch | Methods and structures for the production of electrically treated items and electrical connections |
US7122398B1 (en) | 2004-03-25 | 2006-10-17 | Nanosolar, Inc. | Manufacturing of optoelectronic devices |
JP2006013403A (ja) | 2004-06-29 | 2006-01-12 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール、その製造方法およびその修復方法 |
US7838868B2 (en) | 2005-01-20 | 2010-11-23 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
US7517465B2 (en) | 2004-10-21 | 2009-04-14 | United Solar Ovonic Llc | Ultra lightweight photovoltaic device and method for its manufacture |
US7176543B2 (en) | 2005-01-26 | 2007-02-13 | United Solar Ovonic Corp. | Method of eliminating curl for devices on thin flexible substrates, and devices made thereby |
US7256140B2 (en) | 2005-09-20 | 2007-08-14 | United Solar Ovonic Llc | Higher selectivity, method for passivating short circuit current paths in semiconductor devices |
US20070095384A1 (en) | 2005-10-28 | 2007-05-03 | Farquhar Donald S | Photovoltaic modules and interconnect methodology for fabricating the same |
US7498508B2 (en) | 2006-02-24 | 2009-03-03 | Day4 Energy, Inc. | High voltage solar cell and solar cell module |
US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20070283997A1 (en) | 2006-06-13 | 2007-12-13 | Miasole | Photovoltaic module with integrated current collection and interconnection |
US20070283996A1 (en) | 2006-06-13 | 2007-12-13 | Miasole | Photovoltaic module with insulating interconnect carrier |
JP5121181B2 (ja) | 2006-07-28 | 2013-01-16 | 三洋電機株式会社 | 光起電力素子及びその製造方法 |
EP1898470B1 (en) | 2006-08-30 | 2011-07-27 | Keiwa Inc. | Use of a back sheet for photovoltaic modules and resulting photovoltaic module |
US20080090022A1 (en) | 2006-10-12 | 2008-04-17 | Energy Conversion Devices, Inc. | High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials |
US7812247B2 (en) | 2006-10-23 | 2010-10-12 | Ascent Solar Technologies Inc. | Flexible photovoltaic array with integrated wiring and control circuitry, and associated methods |
WO2008050626A1 (fr) | 2006-10-23 | 2008-05-02 | Daikin Industries, Ltd. | Module de pile solaire, laminé et procédé de fabrication d'un module de pile solaire |
JP4294048B2 (ja) | 2006-11-29 | 2009-07-08 | 三洋電機株式会社 | 太陽電池モジュール |
US7799182B2 (en) | 2006-12-01 | 2010-09-21 | Applied Materials, Inc. | Electroplating on roll-to-roll flexible solar cell substrates |
CN101207160A (zh) * | 2006-12-21 | 2008-06-25 | 香港理工大学 | 柔性光伏电池及其制造方法 |
US7825329B2 (en) * | 2007-01-03 | 2010-11-02 | Solopower, Inc. | Thin film solar cell manufacturing and integration |
CN101675531B (zh) | 2007-02-16 | 2013-03-06 | 纳克公司 | 太阳能电池结构、光生伏打模块及对应的工艺 |
WO2008116134A2 (en) | 2007-03-22 | 2008-09-25 | United Solar Ovonic Llc | Method and apparatus for the laser scribing of ultra lightweight semiconductor devices |
TWI335085B (en) | 2007-04-19 | 2010-12-21 | Ind Tech Res Inst | Bifacial thin film solar cell and method for fabricating the same |
WO2009006230A2 (en) | 2007-06-30 | 2009-01-08 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20090014058A1 (en) | 2007-07-13 | 2009-01-15 | Miasole | Rooftop photovoltaic systems |
US8212139B2 (en) | 2008-01-18 | 2012-07-03 | Tenksolar, Inc. | Thin-film photovoltaic module |
WO2009097161A1 (en) | 2008-01-31 | 2009-08-06 | Global Solar Energy, Inc. | Thin film solar cell string |
WO2009111053A2 (en) | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Buffer layer deposition for thin-film solar cells |
WO2009146187A1 (en) | 2008-04-15 | 2009-12-03 | Global Solar Energy, Inc. | Apparatus and methods for manufacturing thin-film solar cells |
US8207012B2 (en) | 2008-04-28 | 2012-06-26 | Solopower, Inc. | Method and apparatus for achieving low resistance contact to a metal based thin film solar cell |
US20090272436A1 (en) | 2008-05-05 | 2009-11-05 | Osbert Hay Cheung | Non-glass photovoltaic module and methods for manufacture |
US7638353B2 (en) | 2008-06-03 | 2009-12-29 | United Solar Ovonic Llc | Method for fabrication of semiconductor devices on lightweight substrates |
US20090314330A1 (en) | 2008-06-24 | 2009-12-24 | Moser Baer Photovoltaic Limited | Photovoltaic module |
WO2010009268A2 (en) | 2008-07-16 | 2010-01-21 | Konarka Technologies, Inc. | Methods of preparing photovoltaic modules |
DE112009002356T5 (de) * | 2008-09-30 | 2012-01-19 | Global Solar Energy, Inc. | Dünnschicht-Solarzellenreihe |
DE102009020482A1 (de) | 2009-05-08 | 2010-11-11 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung und Serienverschaltung von photovoltaischen Elementen zu einem Solarmodul und Solarmodul |
US8759664B2 (en) | 2009-12-28 | 2014-06-24 | Hanergy Hi-Tech Power (Hk) Limited | Thin film solar cell strings |
US8114702B2 (en) | 2010-06-07 | 2012-02-14 | Boris Gilman | Method of manufacturing a monolithic thin-film photovoltaic device with enhanced output voltage |
US8956888B2 (en) | 2010-11-03 | 2015-02-17 | Apollo Precision Fujian Limited | Photovoltaic device and method and system for making photovoltaic device |
CN107634108B (zh) | 2012-04-17 | 2019-12-13 | 环球太阳能公司 | 积体薄膜太阳能晶胞电池的互连 |
-
2014
- 2014-01-28 CN CN201480017608.3A patent/CN105164816B/zh active Active
- 2014-01-28 WO PCT/US2014/013348 patent/WO2014117138A1/en active Application Filing
- 2014-01-28 US US14/166,223 patent/US9362433B2/en not_active Expired - Fee Related
-
2016
- 2016-06-15 HK HK16106902.6A patent/HK1219564A1/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1231772A (zh) * | 1996-09-26 | 1999-10-13 | 阿克佐诺贝尔公司 | 光电箔的制造方法 |
CN101419990A (zh) * | 2007-10-25 | 2009-04-29 | 上海空间电源研究所 | 柔性薄膜太阳电池组件 |
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US20140213013A1 (en) | 2014-07-31 |
HK1219564A1 (zh) | 2017-04-07 |
US9362433B2 (en) | 2016-06-07 |
CN105164816A (zh) | 2015-12-16 |
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