CN105047561A - Manufacturing method for bipolar power device - Google Patents
Manufacturing method for bipolar power device Download PDFInfo
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- CN105047561A CN105047561A CN201510319322.7A CN201510319322A CN105047561A CN 105047561 A CN105047561 A CN 105047561A CN 201510319322 A CN201510319322 A CN 201510319322A CN 105047561 A CN105047561 A CN 105047561A
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- power device
- bipolar power
- irradiation
- manufacture method
- described bipolar
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 24
- 238000011084 recovery Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 38
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 16
- 230000001413 cellular effect Effects 0.000 abstract description 8
- 238000010923 batch production Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Bipolar Transistors (AREA)
Abstract
The present invention discloses a manufacturing method for a bipolar power device, comprising the following steps: S1, shielding a cellular area of the bipolar power device to prevent the cellular area from being irradiated; S2, irradiating the bipolar power device; and S3, annealing the bipolar power device. Compared with the prior art, the manufacturing method of the present invention has the beneficial effects that irradiation or injection of heavy metal doping is performed for the area in the bipolar power device except for the cellular area, especially the area close to a terminal protection ring, so that a reverse recovery current of the power device is reduced during turn-off, a current turn-off ability of the power device is improved, thereby improving a safety operation area of the power device, and effectively reducing the possibility of occurrence of a latch-up effect on the power device. In addition, the manufacturing method of the present invention is simple in operation, low in cost, suitable for batch production, and wide in application.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly a kind of manufacture method of bipolar power device.
Background technology
The safety operation area of bipolar power device is extremely important in the application of semiconductor.If safety operation area is little, be easy to cause device to turn off and lost efficacy, therefore, the safety operation area of how to improve bipolar power device is most important in the design of semiconductor device.
Cause IGBT (InsulatedGateBipolarTransistor, insulated gate bipolar transistor) device safety operation area lost efficacy common mechanism be in device turn off process, a hole displacement current can be produced, this displacement current can cause the parasitic PNPN of IGBT to open, and latch-up occurs.This effect is particularly serious for the cellular near IGBT terminal protection ring edge.Not only need to bear near the cellular of terminal protection loop section and come from bottom injected holes corresponding to cell region; also need to bear simultaneously and come from chip bottom injected holes corresponding to terminal protection ring region; therefore, the cellular that the displacement current born near the cellular of terminal protection ring compares away from terminal protection ring is large.
In order to solve the problem; general way selects different implantation dosages in the zones of different of chip back; inject less dopant dose in the chip bottom that the region of terminal protection ring is corresponding, and inject more dopant dose in the chip bottom that cell region is corresponding.But this way needs to adopt special lithographic equipment to be aimed at the front of chip at the back side of chip, and cost is high, efficiency is low, is unsuitable for batch production.
Summary of the invention
The technical problem to be solved in the present invention needs to adopt the special lithographic equipment defects such as high and efficiency is low to the cost improving safety operation area and cause to overcome in prior art, provides a kind of cost low, easy to operate and can improve the manufacture method of the bipolar power device of safety operation area.
The present invention solves above-mentioned technical problem by following technical proposals:
A manufacture method for bipolar power device, its feature is, comprises the following steps:
S
1, block the cell region of described bipolar power device, to make described cell region not by irradiation;
S
2, irradiation is carried out to described bipolar power device;
S
3, described bipolar power device is annealed.
The manufacture method of this programme is carried out after completing the normal technological process of bipolar power device.When cell region is blocked, carry out irradiation to bipolar power device, now the region of irradiation is terminal protection ring region and its near zone.In general, the dosage range of irradiation is 1E10cm
-3~ 1E13cm
-3, the energy range of irradiation is 500KeV ~ 10MeV.After irradiation completes, then carry out annealing operation to bipolar power device, the temperature range of annealing is 300 DEG C ~ 500 DEG C, and the time range of annealing is 0.5 hour ~ 3 hours, and the atmosphere of annealing can be N
2, H
2, forming gas or air.The present invention is by carrying out irradiation and annealing to the region outside bipolar power device removing cell region, reverse recovery current when power device is turned off reduces, the switch off current ability of power device is improved, thus improve the safety operation area of power device, effectively reduce the possibility of power device generation latch-up.
Preferably, step S
2in electron irradiation is carried out to described bipolar power device.In this programme, because the quality comparation of electronics is light, when cell region is blocked; when carrying out electron irradiation to bipolar power device; electrons is diffused into whole terminal protection ring regions, and reverse recovery current when power device is turned off reduces, and improves safety operation area.
Preferably, step S
2in proton or helium irradiation are carried out to described bipolar power device.In this programme, the mass ratio of proton and helium is heavier, is not easy to be diffused into whole terminal protection ring regions, controls reverse recovery current when power device turns off particular by the dosage of manual control irradiation and energy.
Preferably, step S
2in irradiation is carried out to the front of described bipolar power device or the back side.In this programme, both irradiation can be carried out to the front of bipolar power device, also irradiation can be carried out to the back side of bipolar power device.
Preferably, step S
2in irradiation is carried out to the below in the terminal protection ring region being positioned at described bipolar power device.
In this programme, carry out irradiation to the below in the terminal protection ring region of bipolar power device, the region of irradiation both can be whole terminal protection ring region, also can be the terminal protection ring region of part.When the region of irradiation is the terminal protection ring region of part, preferably carry out irradiation at the juncture area near cell region and terminal protection ring region.
Preferably, the degree of depth of described irradiation is 5 microns ~ 30 microns.In this programme, when being 5 microns ~ 30 microns to the front of bipolar power device or the degree of depth of back side irradiation, better effects if, namely the safety operation area of power device is higher.
Preferably, by step S
1replace with step S
1', step S
2replace with step S
2',
S
1', block the cell region of described bipolar power device, to stop that heavy metal doping enters described cell region;
S
2', inject heavy metal doping to described bipolar power device.
In this programme, when cell region is blocked, when injecting heavy metal doping to bipolar power device, heavy metal doping can be diffused into whole terminal protection regions.By injecting heavy metal doping and annealing operation to bipolar power device, the switch off current ability of power device being increased, and then improves the safety operation area of power device, effectively reducing the possibility of power device generation latch-up.
Preferably, step S
2' in inject heavy metal doping to the front of described bipolar power device or the back side.
Preferably, described heavy metal doping comprises gold or platinum.In this programme, described heavy metal doping is not limited to gold or platinum, can be other heavy metal.
Preferably, step S
1the middle cell region utilizing baffle plate or photoresist to block described bipolar power device.
Preferably, described bipolar power device is IGBT or fast recovery diode.
In this programme, when bipolar power device is IGBT, manufacture method of the present invention need be carried out after completing the normal technological processes such as front MOSFET (Metal-Oxide-SemiconductorField-EffectTransistor, Metal-Oxide Semiconductor field-effect transistor) technique, front metal, back side injection and back metal technique; When bipolar power device is FRD (FastRecoveryDiode, fast recovery diode) time, manufacture method of the present invention need be carried out after completing the normal technological processes such as front anodic process, front metal, back side injection and back metal technique.In addition, for IGBT or FRD of superhigh pressure such as more than 3300V, the area of terminal protection ring is larger; edge cellular needs the electric current bearing greater density; therefore, implement manufacture method of the present invention to the bipolar power device of superhigh pressure, its effect is more remarkable.
On the basis meeting this area general knowledge, above-mentioned each optimum condition, can combination in any, obtains the preferred embodiments of the invention.
Positive progressive effect of the present invention is: compared with prior art; the present invention passes through the region removed in bipolar power device beyond cell region; particularly irradiation carried out to the region near terminal protection ring or inject heavy metal doping; reverse recovery current when power device is turned off reduces; the switch off current ability of power device is improved; thus improve the safety operation area of power device, effectively reduce the possibility of power device generation latch-up.In addition, manufacture method of the present invention is simple to operate, and cost is low, is applicable to batch production, is widely used.
Accompanying drawing explanation
Fig. 1 is the manufacture method flow chart of the IGBT of the embodiment of the present invention 1.
Fig. 2 is the structural representation of IGBT after He irradiation of the embodiment of the present invention 1.
Fig. 3 is the manufacture method flow chart of the IGBT of the embodiment of the present invention 2.
Fig. 4 is the structural representation after the IGBT injection heavy metal doping of the embodiment of the present invention 2.
Fig. 5 is the manufacture method flow chart of the FRD of the embodiment of the present invention 3.
Fig. 6 is the structural representation of FRD after proton irradiation of the embodiment of the present invention 3.
Embodiment
Mode below by embodiment further illustrates the present invention, but does not therefore limit the present invention among described scope of embodiments.
Embodiment 1
A manufacture method of IGBT, as shown in Figure 1, comprises the following steps:
Step 101, block the cell region of IGBT, to make described cell region not by irradiation;
Step 102, carry out He irradiation to the front of IGBT, the dosage of He irradiation is 1E10cm
-3, the energy of He irradiation is the degree of depth of 500KeV, He irradiation is 10 microns;
Step 103, anneal to IGBT, the temperature of annealing is 400 DEG C, and the time of annealing is 2 hours, and the atmosphere of annealing is N
2.
The structure of IGBT after He irradiation as shown in Figure 2, when the cell region 11 of igbt chip is blocked, carries out He irradiation to the front of igbt chip 10, and wherein, dash area 20 is the region of He irradiation.
Make the degree of depth of He irradiation reach 10 microns by the dosage of control He irradiation and energy in the present embodiment, manufacture method is simple to operate, is applicable to batch production.Compared with existing igbt chip, the igbt chip utilizing the present embodiment manufacture method to make has higher switch off current ability and the safety operation area of Geng Gao.
Embodiment 2
A manufacture method of IGBT, as shown in Figure 3, comprises the following steps:
Step 201, block the cell region of IGBT, to stop that heavy metal doping enters described cell region;
Step 202, to IGBT front inject heavy metal doping;
Step 203, anneal to IGBT, the temperature of annealing is 500 DEG C, and the time of annealing is 1 hour, and the atmosphere of annealing is air.
IGBT injects the structure after heavy metal doping as shown in Figure 4, and when the cell region 11 of igbt chip is blocked, heavy metal doping is injected in the front to igbt chip 10, and wherein, dash area 21 is the region injecting heavy metal doping.
In the present embodiment, heavy metal doping has been diffused into whole terminal protection ring regions.Compared with existing igbt chip, the igbt chip utilizing the present embodiment manufacture method to make has higher switch off current ability, effectively reduces the possibility of igbt chip generation latch-up.
In addition, the heavy metal doping of injecting to igbt chip in the present embodiment can be gold, platinum or other heavy metal.
Embodiment 3
A manufacture method of FRD, as shown in Figure 5, comprises the following steps:
Step 301, block the cell region of FRD, to make described cell region not by irradiation;
Step 302, carry out proton irradiation to the back side of FRD, the dosage of proton irradiation is 1E12cm
-3, the energy of proton irradiation is 1MeV, and the degree of depth of proton irradiation is 25 microns;
Step 303, anneal to FRD, the temperature of annealing is 500 DEG C, and the time of annealing is 1 hour, and the atmosphere of annealing is air.
The structure of FRD after proton irradiation as shown in Figure 6, when the cell region 31 of FRD chip is blocked, carries out proton irradiation to the back side of FRD chip 30, and wherein, dash area 22 is the region of proton irradiation.
Dosage and energy by controlling proton irradiation in the present embodiment make the degree of depth of proton irradiation reach 25 microns.Compared with existing FRD chip, the FRD chip utilizing the present embodiment manufacture method to make has higher switch off current ability and the safety operation area of Geng Gao.
Although the foregoing describe the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is defined by the appended claims.Those skilled in the art, under the prerequisite not deviating from principle of the present invention and essence, can make various changes or modifications to these execution modes, but these change and amendment all falls into protection scope of the present invention.
Claims (11)
1. a manufacture method for bipolar power device, is characterized in that, comprises the following steps:
S
1, block the cell region of described bipolar power device, to make described cell region not by irradiation;
S
2, irradiation is carried out to described bipolar power device;
S
3, described bipolar power device is annealed.
2. manufacture method as claimed in claim 1, is characterized in that, step S
2in electron irradiation is carried out to described bipolar power device.
3. manufacture method as claimed in claim 1, is characterized in that, step S
2in proton or helium irradiation are carried out to described bipolar power device.
4. manufacture method as claimed in claim 3, is characterized in that, step S
2in irradiation is carried out to the front of described bipolar power device or the back side.
5. manufacture method as claimed in claim 4, is characterized in that, step S
2in irradiation is carried out to the below in the terminal protection ring region being positioned at described bipolar power device.
6. manufacture method as claimed in claim 5, it is characterized in that, the degree of depth of described irradiation is 5 microns ~ 30 microns.
7. manufacture method as claimed in claim 1, is characterized in that, by step S
1replace with step S
1', step S
2replace with step S
2',
S
1', block the cell region of described bipolar power device, to stop that heavy metal doping enters described cell region;
S
2', inject heavy metal doping to described bipolar power device.
8. manufacture method as claimed in claim 7, is characterized in that, step S
2' in inject heavy metal doping to the front of described bipolar power device or the back side.
9. manufacture method as claimed in claim 8, is characterized in that, described heavy metal doping comprises gold or platinum.
10. manufacture method as claimed in claim 1, is characterized in that, step S
1the middle cell region utilizing baffle plate or photoresist to block described bipolar power device.
11. manufacture methods according to any one of claim 1 ~ 10, it is characterized in that, described bipolar power device is IGBT or fast recovery diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510319322.7A CN105047561A (en) | 2015-06-11 | 2015-06-11 | Manufacturing method for bipolar power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510319322.7A CN105047561A (en) | 2015-06-11 | 2015-06-11 | Manufacturing method for bipolar power device |
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| Publication Number | Publication Date |
|---|---|
| CN105047561A true CN105047561A (en) | 2015-11-11 |
Family
ID=54454008
Family Applications (1)
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|---|---|---|---|
| CN201510319322.7A Pending CN105047561A (en) | 2015-06-11 | 2015-06-11 | Manufacturing method for bipolar power device |
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|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531634A (en) * | 2016-11-29 | 2017-03-22 | 上海先进半导体制造股份有限公司 | Manufacturing method for super-junction MOS transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09246570A (en) * | 1996-03-13 | 1997-09-19 | Hitachi Ltd | Semiconductor device |
| JP2011166052A (en) * | 2010-02-15 | 2011-08-25 | Toyota Central R&D Labs Inc | Semiconductor element and power conversion device with the semiconductor element |
| US20130341674A1 (en) * | 2012-06-21 | 2013-12-26 | Infineon Technologies Ag | Reverse Conducting IGBT |
| CN103715083A (en) * | 2012-09-28 | 2014-04-09 | 中国科学院微电子研究所 | Preparation method of FRD |
-
2015
- 2015-06-11 CN CN201510319322.7A patent/CN105047561A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09246570A (en) * | 1996-03-13 | 1997-09-19 | Hitachi Ltd | Semiconductor device |
| JP2011166052A (en) * | 2010-02-15 | 2011-08-25 | Toyota Central R&D Labs Inc | Semiconductor element and power conversion device with the semiconductor element |
| US20130341674A1 (en) * | 2012-06-21 | 2013-12-26 | Infineon Technologies Ag | Reverse Conducting IGBT |
| CN103715083A (en) * | 2012-09-28 | 2014-04-09 | 中国科学院微电子研究所 | Preparation method of FRD |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531634A (en) * | 2016-11-29 | 2017-03-22 | 上海先进半导体制造股份有限公司 | Manufacturing method for super-junction MOS transistor |
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Application publication date: 20151111 |