CN104966705B - A kind of solder distribution of semiconductor devices radiating module - Google Patents

Abstract

A solder distribution structure of a heat dissipation module of a semiconductor device, the structure includes a heat sink, a first solder layer, a second solder layer, and a chip; the first solder layer is arranged above the heat sink, the second solder layer is arranged on the side of the heat sink and It is connected with the first solder layer, and the chip is arranged above the first solder layer, which is an upper and lower electrode structure. By growing a layer of second solder layer on one side of the heat sink, the function of the second solder layer is mainly to guide the raised first solder layer to flow to the side of the heat sink during the sintering process, thereby effectively preventing the first solder layer from The layer climbs toward the die, so that the problem of short circuit or light blocking of the die caused by the first solder layer climbing toward the die can be effectively prevented, and the yield, reliability and stability of the device are improved.

Description

Solder distribution of a heat dissipation module of a semiconductor device

technical field

The invention relates to solder distribution of a heat dissipation module of a semiconductor device, belongs to the field of semiconductor device manufacturing, and relates to a preparation process of a heat dissipation module of a semiconductor device.

Background technique

Semiconductor devices refer to discrete devices made of semiconductor materials. According to different semiconductor materials, different processes and geometric structures, researchers have developed a variety of semiconductor devices with different functions. These semiconductor devices are widely used in information storage, communication, military and medical fields. This requires semiconductor devices to have the characteristics of excellent performance, small size, light weight and low power consumption. In order to achieve the above goals, very high requirements are put forward for the manufacturing process of the semiconductor device heat dissipation module.

The most important factor affecting the manufacturing process of semiconductor devices is the sintering process. At present, the most important part of the manufacturing process of semiconductor device cooling modules is the sintering process of semiconductor devices. Whether it is reflow soldering technology or other sintering methods, the core is sintered to the heat sink by the principle of heating. However, in During the sintering process, due to the melting and cooling of the solder, the solder will bulge into a spherical shape, and it is easy to climb to the active area of the die, resulting in a short circuit of the chip or blocking the light from the chip, which will seriously affect the yield and reliability of semiconductor devices. sex and stability.

Contents of the invention

In order to solve the above-mentioned problem that the solder bulges easily caused by the heat sink and the tube core during the sintering process, and climbs to the tube core to cause a short circuit or light blocking of the tube core, the present invention provides a solder distribution structure for a heat dissipation module of a semiconductor device. It can effectively guide the solder to flow toward the heat sink during sintering, prevent the solder from cooling into a ball after cooling down, and climb to the die to cause light blocking and chip short circuit, effectively solving the problem of short circuit or short circuit in the sintering process of existing semiconductor devices The problem of blocking light improves the yield, reliability and stability of the device.

In order to achieve the above object, the present invention provides a solder distribution structure of a heat dissipation module of a semiconductor device, the structure comprising a heat sink (1), a first solder layer (2), a second solder layer (3), and a chip (4); The first solder layer (2) is arranged above the heat sink (1), the second solder layer (3) is arranged on the side of the heat sink (1) and connected with the first solder layer (2), and the chip (4) is arranged on the Above the first solder layer (2), there are upper and lower electrode structures.

The heat sink (1) is a heat sink material with heat dissipation capability, and the heat sink material is copper or tungsten copper or molybdenum copper or ceramic material or diamond or Si or SiC or AlSiC or CuW90 or CuW55; the ceramic material is clay or oxide Aluminum or kaolin or aluminum nitride or silicon nitride or silicon carbide or hexagonal boron nitride.

The first solder layer (2) is a solder material capable of connecting the chip and a heat sink, and the solder material is In, SnPb, AuSn, AgSn, SnAgCu, or Pb-Sn alloy, solder, or conductive silver paste.

The second solder layer (3) is a solder material capable of connecting the chip and a heat sink, and the solder material is In, SnPb, AuSn, AgSn, SnAgCu, or Pb-Sn alloy, solder, or conductive silver paste.

The first solder layer (2) and the second solder layer (3) are the same material or different materials.

The chip (4) is a semiconductor device, and the semiconductor device is a semiconductor light-emitting diode or a photodetector or a semiconductor laser or a photocell or an integrated circuit or other semiconductor devices.

The shape of the second solder layer (3) is rectangle or trapezoid or arc or irregular shape.

The vertical length of the second solder layer (3) is greater than the thickness of the first solder layer (2).

The beneficial effects of the present invention are: a layer of second solder layer 3 is also grown on one side of the heat sink 1, and the function of the second solder layer 3 is mainly to guide the raised first solder layer 2 to the heat sink 1 in the sintering process. side flow, thereby effectively preventing the first solder layer 2 from climbing toward the die 4, the implementation effect is shown in Figure 2, which can effectively prevent the first solder layer 2 from climbing toward the die 4 The problem of short circuit or light blocking of the tube core 4 is caused, and the yield, reliability and stability of the device are improved.

Description of drawings

Figure 1: Side view of the die and heat sink after sintering.

Figure 2: Comparison of implementation effects.

Figure 3: Semiconductor laser chip using the solder distribution of the present invention.

In the figure: 1. Heat sink, 2. First solder layer, 3. Second solder layer, 4. Die core, 5. Solder raised during alloying process, 6. Copper heat sink, 7. Ceramic sheet, 8. Copper Tape, 9, gold layer on the ceramic chip, 10, gold wire, 11, semiconductor laser chip, 12, first indium layer, 13, second indium layer.

detailed description

The improved solder distribution structure of the semiconductor device provided by the present invention provides a specific implementation mode. Taking a semiconductor laser as an example, indium is used as solder and sintered on a copper heat sink, including:

S1 cleans the copper heat sink (6), thereby removing the copper oxide on the surface of the copper heat sink (6), and rinses it with deionized water after cleaning;

S2 places the cleaned copper heat sink (6) on the evaporation table, and evaporates a layer of gold on the surface of the copper heat sink (6);

S3 places the copper heat sink (6) with a gold layer evaporated on its surface in the indium plating solution, and uses an electrochemical method to place a die on the gold-plated copper heat sink (6) while evaporating a layer of the first indium layer ( 12);

S4 According to the electrochemical method described in S3 above, use a specific fixture to vapor-deposit a second indium layer (13) on the copper heat sink (6) with a gold layer on the surface near the light-emitting surface, and the second indium layer The function of (13) is mainly to guide the raised first indium layer (12) to flow to the copper heat sink (6) side in the subsequent alloying process, thereby effectively preventing the first indium layer (12) from flowing to the semiconductor laser Chip (11) direction climbing;

S5 uses magnetron sputtering to sputter thick gold on both sides of the ceramic sheet (7), thereby forming a gold layer (9) on the ceramic sheet. The role of the gold layer (9) on the ceramic sheet is mainly to lead the P pole and N pole of the semiconductor laser chip (11) to the test equipment for testing;

S6 places the copper heat sink (6) with the evaporated indium layer in the fixed groove of the fixture, and puts the semiconductor laser chip (11) on the copper heat sink (6) under a microscope with an adsorption machine. The light-emitting surface of the semiconductor laser chip (11) is aligned with the edge of the copper heat sink (6); at the same time, the ceramic sheet (7) is placed on the copper heat sink (6) under a microscope with an adsorption machine, and then the fixture is pushed to the heating furnace In the process, feed nitrogen to evacuate the air in the heating furnace, and heat the furnace alloy;

After the S7 alloy is finished, lead the gold wire (10) from the ceramic sheet (7) to the semiconductor laser chip (11), then lead the copper strip (8) on the ceramic sheet (7), and then assemble the device to the TO-3 On the base, finally test it with a semiconductor laser tester.

Claims (1)

1. A kind of 1. preparation method of the solder distributed architecture of semiconductor devices radiating module, it is characterised in that：Semiconductor laser In, indium is solder, is sintered on copper is heat sink, its implementation process include it is as follows,

   S1 is heat sink to copper (6) carries out cleaning treatment, and so as to remove the cupric oxide on heat sink (6) surface of copper removal, deionization is used after having cleaned Water rinses；

   S2 places the complete copper of cleaning treatment heat sink (6) on evaporator, and one layer of gold is deposited on the surface of copper heat sink (6)；

   The copper heat sink (6) that S3 surface is deposited upper layer gold is placed in plating indium liquid, using the method for electrochemistry in gold-plated copper heat Tube core one side is placed on heavy (6) one layer of first indium layer (12) is deposited；

   Electrochemical methods of the S4 as described in above-mentioned S3, with the copper heat sink (6) of fixture layer gold on the evaporation of surface close to exiting surface one One layer of second indium layer (13) is deposited in side, and the effect of the second indium layer (13) in follow-up alloy process primarily to guide grand The first indium layer (12) risen flows to heat sink (6) side of copper, so as to effectively prevent the first indium layer (12) to semiconductor laser Climb in device chip (11) direction；

   The tow sides of potsherd (7) are sputtered thick gold by S5 using magnetron sputtering, so as to form the layer gold on potsherd (9)；Pottery The effect of layer gold (9) on ceramics is enterprising in order to which the P poles of semiconductor laser chip (11) and N poles are drawn out into test equipment Row test；

   The copper that indium layer has been deposited heat sink (6) is placed in the fixing groove of fixture by S6, is under the microscope swashed semiconductor with adsorption machine Light device chip (11) is placed on copper heat sink (6), is necessary to ensure that the exiting surface and copper heat of semiconductor laser chip (11) here Heavy (6) edge alignment；Meanwhile potsherd (7) is placed on copper heat sink (6) under the microscope with adsorption machine, then fixture is pushed away Into heating furnace, it is passed through nitrogen and empties the air in heating furnace, by heating furnace alloy；

   After S7 alloys terminate, gold thread (10) is guided on semiconductor laser chip (11) from potsherd (7), then in potsherd (7) copper strips (8) is drawn on, then device is assembled on TO-3 pedestals, finally tested with semiconductor laser tester.