CN104952909A - Junction terminal structure of diode chip - Google Patents
Junction terminal structure of diode chip Download PDFInfo
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- CN104952909A CN104952909A CN201410445795.7A CN201410445795A CN104952909A CN 104952909 A CN104952909 A CN 104952909A CN 201410445795 A CN201410445795 A CN 201410445795A CN 104952909 A CN104952909 A CN 104952909A
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- groove
- diode chip
- backlight unit
- termination structures
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Abstract
Disclosed in the invention is a junction terminal structure of a diode chip. With the structure, problems of low chip voltage-withstanding value and high leakage current in the existing diode groove can be solved. A step structure is arranged at a side wall of a voltage groove of a diode. A two-step or three-step structure is arranged at the voltage groove; and the depth of the voltage groove is characterized in that the groove passes through the P+N junction and extends into the N region by 20 to 20 micrometers. The structure is suitable for the production field of all semiconductor chips with different table-board structures.
Description
Technical field
The present invention relates to the chip junction termination structures of power semiconductor, particularly relate to the junction termination structures of diode chip for backlight unit.
Background technology
In diode chip for backlight unit manufacturing process process, good withstand voltage for being formed, the method usually adopting angle lap technique or table top grooving to add dielectric protection layer realizes.The shortcoming of existing structure is that angle lap technique is time-consuming, and efficiency is low, and manufacturing cost is high.It is withstand voltage lower that the structure of table top grooving U-shaped is born, and the crest voltage usually born is 600 ~ 1400V.It is not wide that reason is that this structure causes space charge region to open up, and electric field is concentrated, and causes that chip is resistance to be forced down, the high pressure resistant problem of junction termination structures urgently to be resolved hurrily.
Summary of the invention
The object of this invention is to provide a kind of junction termination structures of diode chip for backlight unit, solve the problem that the junction termination structures withstand voltage of existing diode chip for backlight unit is low.
The technical solution adopted for the present invention to solve the technical problems is: a kind of junction termination structures of diode chip for backlight unit, comprises growing base area N, Kuo Lin district N+, heavily doped region P+, voltage groove, and described voltage groove is high pressure resistant, that surface field is weak voltage groove structure.Described voltage groove is the monolateral groove structure being arranged on diode junction terminal edge edge or the U-type groove structure be arranged in diode junction terminal; Described monolateral groove sidewall is provided with ledge structure, described U-type groove madial wall is provided with ledge structure.
Further, the upper edge of described voltage groove sidewall is at least provided with one-level ledge structure.
Preferably, the upper edge of described voltage groove sidewall is provided with two stage steps structure.
Beneficial effect of the present invention: described voltage groove adopts ledge structure, effectively can increase the surface area of voltage groove, reduce P layer surface concentration, be conducive to the broadening of space charge region, reach the effect reducing surface field intensity, improve the stability of operating voltage and diode chip for backlight unit electrical quantity.The withstand voltage peak value of described one deck ledge structure can reach 1800 ~ 3000 volts, and the withstand voltage peak value of described two-layer ledge structure can reach 3000 ~ 4000 volts.
Below with reference to drawings and Examples, the present invention is described in detail.
Accompanying drawing explanation
Fig. 1 is voltage groove of the present invention is oblique single groove one-level ledge structure schematic diagram.
Fig. 2 is voltage groove of the present invention is U-type groove one-level ledge structure schematic diagram.
The vertical view of Fig. 3 to be voltage groove of the present invention be oblique single groove.
Fig. 4 is voltage groove of the present invention is the vertical view of U-type groove.
Fig. 5 is voltage groove of the present invention is oblique single groove two stage steps structural representation.
Fig. 6 is voltage groove of the present invention is U-type groove two stage steps structural representation.
Embodiment
Embodiment 1: a kind of junction termination structures of diode chip for backlight unit, as shown in Figures 1 to 4, comprises growing base area N, Kuo Lin district N+, heavily doped region P+, voltage groove 1, and described voltage groove is high pressure resistant, that surface field is weak voltage groove structure.Described voltage groove is the monolateral groove structure being arranged on diode junction terminal edge edge, described monolateral groove sidewall is provided with ledge structure, as shown in Figure 1, Figure 3; Or the U-type groove structure be arranged in diode junction terminal, as shown in Figure 2, Figure 4 shows; Described U-type groove madial wall 3 is provided with ledge structure.
The degree of depth of described voltage groove 1 was that P+N knot stretches into N district, growing base area 20 ~ 70um.The surface of described voltage groove 1 is provided with insulating barrier 2, insulating barrier 2 is provided with glass passivation layer 4.Diode chip for backlight unit so that the withstand voltage peak value of theory of design is 2400V:
When adopting traditional electrical indent structure, withstand voltage peak value is 1400V; When adopting one-level ledge structure, withstand voltage peak value can reach 1900 ~ 2200V.Concrete parameter is:
When described voltage groove 1 top bar 11 width be 150um, the difference in height of described step surface and heavily doped region P+ upper surface is 30um.The withstand voltage peak value of this structure is 1900V.
When described voltage groove 1 top bar 11 width be 400um, the difference in height of described step surface and heavily doped region P+ upper surface is 40um.The withstand voltage of this structure is 2200V.
When described voltage groove 1 top bar 11 width be 600um, the difference in height of described step surface and heavily doped region P+ upper surface is 60um.The withstand voltage peak value of this structure is 2100V.
Embodiment 2:
A junction termination structures for diode chip for backlight unit, as shown in Fig. 3 to 6, comprises growing base area N, Kuo Lin district N+, heavily doped region P+, voltage groove 1, and described voltage groove is high pressure resistant, that surface field is weak voltage groove structure.Described voltage groove is the monolateral groove structure being arranged on diode junction terminal edge edge, and described monolateral groove sidewall is provided with ledge structure, as shown in Fig. 3, Fig. 5; Or the U-type groove structure be arranged in diode junction terminal, shown in figure Fig. 4, Fig. 6; Described U-type groove madial wall 3 is provided with ledge structure.The degree of depth of described voltage groove 1 was that P+N knot stretches into N district, growing base area 20 ~ 70um.The surface of described voltage groove 1 is provided with insulating barrier 2, insulating barrier 2 is provided with glass passivation layer 4.Diode chip for backlight unit so that the withstand voltage peak value of theory of design is 3500V:
When adopting traditional electrical indent structure, withstand voltage peak value the best is 1800V; When adopting one-level ledge structure, withstand voltage peak value the best is 2800V, and when adopting two stage steps structure, design parameter is:
When on described voltage groove 1, first order step 13 width is 200um, second level step 14 width is 150um, described second level step 14 is 40um with the difference in height of heavily doped region P+ upper surface, and described first order step 13 is 5um with the difference in height of second level step surface 14.The withstand voltage of this structure is 3100V.
When on described voltage groove 1, first order step 13 width is 400um, second level step 14 width is 250um, described second level step 14 is 50um with the difference in height of heavily doped region P+ upper surface, and described first order step 13 is 10um with the difference in height of second level step 14.The withstand voltage of this structure is 3400V.
When on described voltage groove 1, first order step 13 width is 500um, second level step 14 width is 350um, described second level step 14 is 50um with the difference in height of heavily doped region P+ upper surface, and described first order step 13 is 20um with the difference in height of second level step 14.The withstand voltage of this structure is 3200V.
By above-mentioned date comprision, can very clearly draw, the ledge structure of voltage groove can be good at the withstand voltage peak value of forward improving voltage groove, the withstand voltage peak value of whole junction termination structures is improved, meanwhile, can effectively reduce surface field intensity, improve the stability of thyristor chip.As deliberately made the amendment of simple dimensional parameters on this basis, all fall into protection scope of the present invention.
Claims (8)
1. a junction termination structures for diode chip for backlight unit, comprises growing base area N, Kuo Lin district N+, heavily doped region P+, and voltage groove, is characterized in that: described voltage groove is high pressure resistant, that surface field is weak voltage groove structure.
2. the junction termination structures of diode chip for backlight unit as claimed in claim 1, is characterized in that: described voltage groove is the monolateral groove structure being arranged on diode junction terminal edge edge or the U-type groove structure be arranged in diode junction terminal; Described monolateral groove sidewall is provided with ledge structure, described U-type groove madial wall is provided with ledge structure.
3. the junction termination structures of diode chip for backlight unit as claimed in claim 2, is characterized in that: the upper edge of described voltage groove sidewall is at least provided with one-level ledge structure.
4. the junction termination structures of diode chip for backlight unit as claimed in claim 3, is characterized in that: the upper edge of described voltage groove sidewall is provided with two stage steps structure.
5. the junction termination structures of diode chip for backlight unit as claimed in claim 3, is characterized in that: the upper edge of described voltage groove sidewall is provided with one-level ledge structure; The width of described voltage groove step is 150 ~ 600um, and the difference in height of described step surface and heavily doped region P+ upper surface is 30 ~ 70um.
6. the junction termination structures of diode chip for backlight unit as claimed in claim 4, it is characterized in that: described voltage groove first order step width is 150 ~ 500um, second level step width is 100 ~ 400um, the difference in height of described second level step and heavily doped region P+ upper surface is 40 ~ 70um, and the difference in height of described first order step and second level step is 5 ~ 20um.
7. the junction termination structures of the diode chip for backlight unit as described in claim 5 or 6, is characterized in that: the degree of depth of described voltage groove was that P+N knot stretches into growing base area N20 ~ 70um.
8. the junction termination structures of diode chip for backlight unit as claimed in claim 1, is characterized in that: the surface of described voltage groove is provided with insulating barrier, and insulating barrier is provided with glass passivation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410445795.7A CN104952909A (en) | 2014-09-03 | 2014-09-03 | Junction terminal structure of diode chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410445795.7A CN104952909A (en) | 2014-09-03 | 2014-09-03 | Junction terminal structure of diode chip |
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| CN104952909A true CN104952909A (en) | 2015-09-30 |
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| CN201410445795.7A Pending CN104952909A (en) | 2014-09-03 | 2014-09-03 | Junction terminal structure of diode chip |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390385A (en) * | 2015-11-03 | 2016-03-09 | 常州星海电子有限公司 | High-surge glass passivation chip |
| CN108206213A (en) * | 2016-12-16 | 2018-06-26 | 赛米控电子股份有限公司 | Thyristor and the method for manufacturing thyristor |
| CN108365015A (en) * | 2017-12-29 | 2018-08-03 | 济南兰星电子有限公司 | Semiconductor diode chip and preparation method thereof |
| CN108962747A (en) * | 2017-05-24 | 2018-12-07 | 亚昕科技股份有限公司 | Diode manufacturing method with ladder-type structure |
| US10784381B2 (en) | 2018-04-09 | 2020-09-22 | 3-5 Power Electronics GmbH | Stacked III-V semiconductor component |
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| GB2017633A (en) * | 1978-02-14 | 1979-10-10 | Fuji Photo Film Co Ltd | Photographic film spool |
| JPS61234073A (en) * | 1985-04-10 | 1986-10-18 | Hitachi Ltd | Semiconductor device |
| CN1199930A (en) * | 1997-05-19 | 1998-11-25 | 松下电子工业株式会社 | Semiconductor device and its producing method |
| DE10349908A1 (en) * | 2003-10-25 | 2005-06-02 | Semikron Elektronik Gmbh | Power semiconductor component with a MESA structure used as a diode for a rectifier comprises a semiconductor body with a first zone of a first conducting type and a second zone of a second conducting type |
| CN102354703A (en) * | 2011-10-19 | 2012-02-15 | 扬州杰利半导体有限公司 | Planar structure-type superhigh-voltage diode chip |
| CN103975422A (en) * | 2012-11-28 | 2014-08-06 | 新电元工业株式会社 | Method for manufacturing resin-sealed semiconductor device, and resin-sealed semiconductor device |
| CN204067365U (en) * | 2014-09-03 | 2014-12-31 | 安徽省祁门县黄山电器有限责任公司 | A kind of junction termination structures of diode chip for backlight unit |
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2014
- 2014-09-03 CN CN201410445795.7A patent/CN104952909A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2017633A (en) * | 1978-02-14 | 1979-10-10 | Fuji Photo Film Co Ltd | Photographic film spool |
| JPS61234073A (en) * | 1985-04-10 | 1986-10-18 | Hitachi Ltd | Semiconductor device |
| CN1199930A (en) * | 1997-05-19 | 1998-11-25 | 松下电子工业株式会社 | Semiconductor device and its producing method |
| DE10349908A1 (en) * | 2003-10-25 | 2005-06-02 | Semikron Elektronik Gmbh | Power semiconductor component with a MESA structure used as a diode for a rectifier comprises a semiconductor body with a first zone of a first conducting type and a second zone of a second conducting type |
| CN102354703A (en) * | 2011-10-19 | 2012-02-15 | 扬州杰利半导体有限公司 | Planar structure-type superhigh-voltage diode chip |
| CN103975422A (en) * | 2012-11-28 | 2014-08-06 | 新电元工业株式会社 | Method for manufacturing resin-sealed semiconductor device, and resin-sealed semiconductor device |
| CN204067365U (en) * | 2014-09-03 | 2014-12-31 | 安徽省祁门县黄山电器有限责任公司 | A kind of junction termination structures of diode chip for backlight unit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390385A (en) * | 2015-11-03 | 2016-03-09 | 常州星海电子有限公司 | High-surge glass passivation chip |
| CN108206213A (en) * | 2016-12-16 | 2018-06-26 | 赛米控电子股份有限公司 | Thyristor and the method for manufacturing thyristor |
| CN108962747A (en) * | 2017-05-24 | 2018-12-07 | 亚昕科技股份有限公司 | Diode manufacturing method with ladder-type structure |
| CN108365015A (en) * | 2017-12-29 | 2018-08-03 | 济南兰星电子有限公司 | Semiconductor diode chip and preparation method thereof |
| US10784381B2 (en) | 2018-04-09 | 2020-09-22 | 3-5 Power Electronics GmbH | Stacked III-V semiconductor component |
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Application publication date: 20150930 |