CN104952508A - Metal wire used for solar cell back electrode and preparation method thereof, back electrode and preparation method thereof, solar cell sheet and cell module - Google Patents
Metal wire used for solar cell back electrode and preparation method thereof, back electrode and preparation method thereof, solar cell sheet and cell module Download PDFInfo
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Abstract
The invention provides a metal wire used for a solar cell back electrode and a preparation method thereof, a back electrode and a preparation method thereof, a solar cell sheet and a cell module. The metal wire comprises metal and brazing flux. The brazing flux comprises reactants, reaction auxiliary agents and wetting auxiliary agents. The reactants are at least one of ZnCl2, SnCl2 and CdCl2. The reaction auxiliary agents are NaF and/or KF. The wetting auxiliary agents are NH4Cl and/or NH4Br. Back electrode welding is performed by using the metal wire used for the solar cell back electrode so that welding strength is high. Meanwhile, non-silver paste is used so that cost is low.
Description
Technical field
The invention belongs to area of solar cell, particularly relate to a kind of back electrode of solar cell wire and preparation method, back electrode and preparation method, solar battery sheet and battery component.
Background technology
The crystal silicon solar energy battery that current maturation is commercially produced is simple with its technological process, and transformation efficiency is high, is convenient to the advantages such as large-scale production and develops rapidly, and such battery occupies the share of more than 80% of photovoltaic market amount of batteries.Solar cell is expected to the mainstay becoming future electrical energy supply.The method of the making crystalline silicon solar battery electrode of current business is metallization process, namely adopt the method for silk screen printing at the shady face printing 2-3 bar back silver paste of silicon chip, dry, then print back aluminum slurry at the whole shady face (region except printing back silver paste) of battery again, dry, again at the phototropic face printing phototropic face silver slurry of battery, then burning freezing of a furnace first drying sintering forms.The program forms backplate after the zone sintering of shady face silver slurry, and form front electrode after the zone sintering of phototropic face silver slurry, technique is simply ripe.But the electrode wires at the positive back side of the program all uses the electrocondution slurry of argentiferous, and therefore, material cost is relatively high.How to adopt non-silver material as the conductive electrode of battery, and keep the good performance such as conduction, attachment, welding, remain the focus of current crystalline silicon solar battery electrode research.
Publication number is that a kind of backplate that patent discloses of CN102810344A is used containing silver-plated copper slurry and preparation method thereof, and conducting metal powder is wherein made up of silver powder and silver-plated copper powder, and silver-plated copper powder accounts for majority.This invention reduces the cost of manufacture of backplate, solve the problem of oxidation of pure base metal slurry in cell piece sintering process, and contact resistance is little, weldability and adhesive force good, battery conversion efficiency is high.But, this invention still have employed the standby slurry technique of metallic silver, the program and traditional back silver starch technology without difference in essence, and, if the silver-plated copper powder added at metallic conduction powder is too much, slurry may be caused after sintering, the welding performance of electrode band and photovoltaic welding belt and declining with the adhesion property of silicon base.
Summary of the invention
The present invention solves the conductive electrode slurry of existing solar cell for silver slurry, the technical problem that cost is high, weld strength is poor, provides back electrode of solar cell wire and preparation method, back electrode and preparation method, solar battery sheet and the battery component of the non-silver material that a kind of cost is low, weld strength is good.
The invention provides a kind of back electrode of solar cell wire, this wire comprises metal and brazing flux; Described brazing flux comprises reactant, reaction promoter and wetting aid; Described reactant is ZnCl
2, SnCl
2and CdCl
2in at least one; Described reaction promoter is NaF and/or KF; Described wetting aid is NH
4cl and/or NH
4br.
Present invention also offers a kind of back electrode of solar cell preparation method wiry, the method is smelted for raw metal is put into vacuum furnace, is atomized into fine powder, then mix with brazing flux powder, compressing, vacuum-sintering becomes composite ingot, obtains wire by after composite ingot extruding and drawing.
Present invention also offers a kind of preparation method of back electrode of solar cell, adopt the method for soldering wire to be coated on aluminium back surface field surface and namely obtain back electrode; Described wire is wire of the present invention.
Present invention also offers a kind of back electrode of solar cell, described back electrode is that said method prepares.
Present invention also offers a kind of solar battery sheet, comprise silicon chip, be positioned at silicon chip back side back of the body electric field, be positioned at the back electrode on back of the body electric field and be positioned at the positive electrode of front side of silicon wafer, described back electrode is back electrode of solar cell of the present invention.
Present invention also offers a kind of solar module, described solar module comprises the backboard, sealant layer, cell piece, sealant layer and the photic zone that stack gradually, and described cell piece is solar battery sheet of the present invention.
Wire used for solar batteries of the present invention, mixes in a metal uniformly by brazing flux, therefore, welding process in, for pellumina removal advantageously.Do not need to use the equipment costly such as ultrasonic bonding, namely common welding equipment can complete welding, and weld strength is high.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The invention provides a kind of back electrode of solar cell wire, this wire comprises metal and brazing flux; Described brazing flux comprises reactant, reaction promoter and wetting aid; Described reactant is ZnCl
2, SnCl
2and CdCl
2in at least one; Described reaction promoter is NaF and/or KF; Described wetting aid is NH
4cl and/or NH
4br.
The invention provides a kind of back electrode of solar cell wire, the thermal coefficient of expansion of aluminium and aluminium oxide is inconsistent, thus have the gap of microcosmic, heavy metal chloride is infiltrated, with the aluminium haptoreaction (ZnCl of inside by the gap on pellumina microcosmic or weak link
2+ Al → Zn+AlCl
3, SnCl
2+ Al → Sn+AlCl
3, CdCl
2+ Al → Cd+AlCl
3), the AlCl of generation
3highly volatile, can break through pellumina, heavy metal is restored, and is deposited on aluminium surface, promotes wettability.At the temperature of soldering, the brazing flux of fusing is ionized state, wherein anion F
-, together infiltrate from the gap of microcosmic with brazing flux, the brazing flux of melting and aluminium define the electrochemical structure corroding Yu be corroded.F
-+ AlCl
3→ AlF
6 -3formation, effectively reduce the electrode potential of aluminium in fusing brazing flux, accelerate the electrochemical corrosion of aluminium, enhance the removal effect of pellumina.Add NH again
4cl and/or NH
4br reduces the fusing point of brazing flux and increases the wetability of brazing flux to cell back aluminium lamination.
According to wire provided by the present invention, in order to improve welding effect wiry further, preferably, with described total weight wiry for benchmark, the content of described brazing flux is 12-26wt%, and the content of described metal is 74-88wt%.
According to wire provided by the present invention, in order to improve welding effect wiry further, preferably, with the total weight of described reactant for benchmark, the content of described reaction promoter is 1.5-3wt%, and the content of described wetting aid is 8-30wt%.
According to wire provided by the present invention, described metal has no particular limits, the various metals can commonly used for this area, be preferably ashbury metal, described ashbury metal is at least one in Sn-Pb, Sn-Zn, Sn-Bi, Sn-In, Sn-Pb-Zn, Sn-Ag, Sn-Cu, Sn-Ag-Cu, Sn-Ag-Bi, Sn-Zn-Bi, Sn-Zn-Ag, Sn-Zn-In, Sn-In-Bi.
According to wire provided by the present invention, preferably, described diameter wiry is 0.8-1.4mm.
Present invention also offers back electrode of solar cell described above preparation method wiry, the method is smelted for raw metal is put into vacuum furnace, be atomized into fine powder, then mix with brazing flux powder, compressing, vacuum-sintering becomes composite ingot, obtains wire by after composite ingot extruding and drawing.
Present invention also offers a kind of preparation method of back electrode of solar cell, adopt the method for soldering wire to be coated on aluminium back surface field surface and namely obtain back electrode; Described wire is wire of the present invention.
According to the preparation method of back electrode of solar cell provided by the present invention, preferably, the method of described soldering is for be placed in heating muff by described wire, described heating muff is added drop-wise to aluminium back surface field surface after carrying out heating and melting to described wire, then use electric soldering iron tip that motlten metal silk is heated coating again, form back electrode on described aluminium back surface field surface.
According to the preparation method of back electrode of solar cell provided by the present invention, preferably, the temperature of described aluminium back surface field is 100-150 DEG C, and the heating-up temperature of described heating muff is 200-450 DEG C.According to different wires, the welding temperature of the best of heating muff is different.Those skilled in the art can determine heating-up temperature according to concrete wire.
According to the preparation method of back electrode of solar cell provided by the present invention, the wire in order to more convenient melting is added drop-wise to the surface of aluminium back surface field, and preferably, described heating muff and the angle that formed of described aluminium back surface field surface are 30-60 °, and more preferably 45
o.During work, can give heating muff certain pressure at the opposite side of heating muff, the solder stick of fusing be released heating muff, drips in the aluminium back surface field of cell piece.
According to the preparation method of back electrode of solar cell provided by the present invention, preferably, described electric soldering iron tip has the inclined-plane towards described aluminium back surface field surface, described inclined-plane be 0.1-0.2mm with the vertical range on described aluminium back surface field surface foremost, the vertical range on described heating muff least significant end and described aluminium back surface field surface is 0.1-0.5mm, and least significant end and the described electric soldering iron tip horizontal range foremost of described heating muff are 10-30mm.
According to the preparation method of back electrode of solar cell provided by the present invention, preferably, the angle that described inclined-plane and described aluminium back surface field surface are formed is 25-35 °.
According to the preparation method of back electrode of solar cell provided by the present invention, described aluminium back surface field can be positioned on jig, resiliency supported is adopted between described aluminium back surface field and jig, as resistant to elevated temperatures adhesive tape, the thickness of High temperature-resistanadhesive adhesive tape, between 1.0-1.5mm, is generally good at about 1.3mm.Jig there is negative pressure, described aluminium back surface field can be adsorbed in the High temperature-resistanadhesive adhesive tape on jig.Jig can heat, and maximum temperature can reach 140 DEG C, considers bearing of High temperature-resistanadhesive adhesive tape, is generally arranged on 120 DEG C.
According to the preparation method of back electrode of solar cell provided by the present invention, described aluminium back surface field is followed jig and is moved from left to right, and the aqueous solder stick trickled in aluminium back surface field contacts with electric iron, and welding coating occurs immediately.The speed of jig movement, at 20-60mm/s, according to the difference of solder stick, adjusts, and ordinary circumstance is good with 40mm/s.
The present invention also provides a kind of back electrode of solar cell, and described back electrode is prepared by method of the present invention.
Present invention also offers a kind of solar battery sheet, comprise silicon chip, be positioned at silicon chip back side back of the body electric field, be positioned at the back electrode on back of the body electric field and be positioned at the positive electrode of front side of silicon wafer, described back electrode is back electrode of solar cell of the present invention.
Present invention also offers a kind of solar module, described solar module comprises the backboard, sealant layer, cell piece, sealant layer and the photic zone that stack gradually, it is characterized in that, described cell piece is solar battery sheet of the present invention.
The present invention is described in further detail for embodiment of passing through below.
Embodiment 1
1, wire is prepared
The Zn of Pb and 15.6g of the Sn of 65.2g, 19.2g is placed in vacuum furnace smelt, temperature rises to 460 DEG C, and insulation 15min, vacuum atomizing becomes lemel A1.
By 28gSnCl
2, 55gZnCl
2, 2gNaF and 15gNH
4br mixes, grinding, crosses 200 eye mesh screens, obtains brazing flux fine powder B1.
Get the A1 of 82g, the B1 Homogeneous phase mixing of 18g, compressing, sinter in vacuum furnace, sintering temperature 240 DEG C, keep 10mins, be fired into composite ingot.
Composite ingot is repeatedly extruded, solid metal silk D1 that drawing obtains 1.0mm diameter.
2, the preparation of solar cell
The polysilicon chip specification adopted is: 156 × 156mm, thickness is 200 microns (before corrosion).After silicon wafer wool making, PN junction processed, coated with antireflection film, after whole shady face adopts silk screen printing back field aluminum paste (the 108C aluminium paste of the large standing grain science and technology in Taiwan) and dries, republish front side silver paste (the 17A silver slurry of Dupont company), after process of passing through tunnel stove sintering, possessed the cell piece of back of the body aluminium field and positive electricity polar curve.D1 is placed in welder heating muff, the temperature of heating muff is 240 DEG C, and the angle that heating muff heating muff and cell piece surface are formed is 45 °, and the vertical range on heating muff least significant end and cell piece surface is 0.1mm; The temperature of electric soldering bit is 380 DEG C, and electric soldering iron tip inclined-plane and the angle that formed of cell piece surface are 30 °, electric soldering iron tip inclined-plane be 0.1mm with the vertical range on cell piece surface foremost, the distance between heating muff and electric soldering iron tip is 20mm; Be placed on by cell piece on jig, the translational speed of jig is 40mm/s; The compensation temperature of jig is 120 DEG C.Back electrode band of the present invention is continuous band, in whole aluminium back surface field surface distributed three.
The battery sample that the present embodiment obtains is designated as S1.
Embodiment 2
1, wire is prepared
The Pb of the Sn of 73.9g, 26.1g is placed in vacuum furnace smelt, temperature rises to 450 DEG C, and insulation 15min, vacuum atomizing becomes lemel A2.
28gSnCl
2, 52gZnCl
2, 1.2gNaF, 18.8gNH
4br, mixes, grinding, crosses 200 eye mesh screens, obtains brazing flux fine powder B2.
Get the A2 of 88g, the B2 Homogeneous phase mixing of 12g, compressing, sinter in vacuum furnace, sintering temperature 240 DEG C, keep 10mins, be fired into composite ingot.
Composite ingot is repeatedly extruded, solid metal silk D2 that drawing obtains 1.0mm diameter.
2, the preparation of solar cell
The polysilicon chip specification adopted is: 156 × 156mm, thickness is 200 microns (before corrosion).After silicon wafer wool making, PN junction processed, coated with antireflection film, after whole shady face adopts silk screen printing back field aluminum paste (the 108C aluminium paste of the large standing grain science and technology in Taiwan) and dries, republish front side silver paste (the 17A silver slurry of Dupont company), after process of passing through tunnel stove sintering, possessed the cell piece of back of the body aluminium field and positive electricity polar curve.D2 is placed in welder heating muff, the temperature of heating muff is 240 DEG C, and the angle that heating muff heating muff and cell piece surface are formed is 30 °, and the vertical range on heating muff least significant end and cell piece surface is 0.5mm; The temperature of electric soldering bit is 380 DEG C, and electric soldering iron tip inclined-plane and the angle that formed of cell piece surface are 25 °, electric soldering iron tip inclined-plane be 0.5mm with the vertical range on cell piece surface foremost, the distance between heating muff and electric soldering iron tip is 30mm; Be placed on by cell piece on jig, the translational speed of jig is 40mm/s; The compensation temperature of jig is 150 DEG C.Back electrode band of the present invention is continuous band, in whole aluminium back surface field surface distributed three.
The battery sample that the present embodiment obtains is designated as S2.
Embodiment 3
1, wire is prepared
Ag and 0.5gCu of the Sn of 96.5g, 3.0g is placed in vacuum furnace smelt, temperature rises to 500 DEG C, and insulation 15min, vacuum atomizing becomes lemel A3.80gZnCl
2, 2.4gNaF, 17.6gNH
4cl, mixes, grinding, crosses 200 eye mesh screens, obtains brazing flux fine powder B3.
Get the A3 of 80g, the B3 Homogeneous phase mixing of 20g, compressing, sinter in vacuum furnace, sintering temperature 270 DEG C, keep 10mins, be fired into composite ingot.
Composite ingot is repeatedly extruded, solid metal silk D3 that drawing obtains 1.0mm diameter.
2, the preparation of solar cell
The polysilicon chip specification adopted is: 156 × 156mm, thickness is 200 microns (before corrosion).After silicon wafer wool making, PN junction processed, coated with antireflection film, after whole shady face adopts silk screen printing back field aluminum paste (the 108C aluminium paste of the large standing grain science and technology in Taiwan) and dries, republish front side silver paste (the 17A silver slurry of Dupont company), after process of passing through tunnel stove sintering, possessed the cell piece of back of the body aluminium field and positive electricity polar curve.D3 is placed in welder heating muff, the temperature of heating muff is 270 DEG C, and the angle that heating muff heating muff and cell piece surface are formed is 60 °, and the vertical range on heating muff least significant end and cell piece surface is 0.2mm; The temperature of electric soldering bit is 430 DEG C, and electric soldering iron tip inclined-plane and the angle that formed of cell piece surface are 35 °, electric soldering iron tip inclined-plane be 0.1mm with the vertical range on cell piece surface foremost, the distance between heating muff and electric soldering iron tip is 10mm; Be placed on by cell piece on jig, the translational speed of jig is 40mm/s; The compensation temperature of jig is 100 DEG C.Back electrode band of the present invention is continuous band, in whole aluminium back surface field surface distributed three.
The battery sample that the present embodiment obtains is designated as S3.
Embodiment 4
By the Zn of the Sn of 85g, 15g, be placed in vacuum furnace and smelt, temperature rises to 250 DEG C, and insulation 15min, vacuum atomizing becomes lemel A4.
90gCdCl
2, 1.8gNaF, 7.2gNH
4br, mixes, grinding, crosses 200 eye mesh screens, obtains brazing flux fine powder B4.
Get the A4 of 74g, the B4 Homogeneous phase mixing of 26g, compressing, sinter in vacuum furnace, sintering temperature 250 DEG C, keep 10mins, be fired into composite ingot.
Composite ingot is repeatedly extruded, solid metal silk D4 that drawing obtains 1.0mm diameter.
2, the preparation of solar cell
The polysilicon chip specification adopted is: 156 × 156mm, thickness is 200 microns (before corrosion).After silicon wafer wool making, PN junction processed, coated with antireflection film, after whole shady face adopts silk screen printing back field aluminum paste (the 108C aluminium paste of the large standing grain science and technology in Taiwan) and dries, republish front side silver paste (the 17A silver slurry of Dupont company), after process of passing through tunnel stove sintering, possessed the cell piece of back of the body aluminium field and positive electricity polar curve.D4 is placed in welder heating muff, the temperature of heating muff is 250 DEG C, and the angle that heating muff heating muff and cell piece surface are formed is 45 °, and the vertical range on heating muff least significant end and cell piece surface is 0.1mm; The temperature of electric soldering bit is 410 DEG C, and electric soldering iron tip inclined-plane and the angle that formed of cell piece surface are 30 °, electric soldering iron tip inclined-plane be 0.1mm with the vertical range on cell piece surface foremost, the distance between heating muff and electric soldering iron tip is 20mm; Be placed on by cell piece on jig, the translational speed of jig is 40mm/s; The compensation temperature of jig is 120 DEG C.Back electrode band of the present invention is continuous band, in whole aluminium back surface field surface distributed three.
The battery sample that the present embodiment obtains is designated as S4.
Embodiment 5
The Bi of the Zn of the Sn of 89g, 8g, 3g is placed in vacuum furnace smelt, temperature rises to 280 DEG C, and insulation 15min, vacuum atomizing becomes lemel A5.76gSnCl
2, 1.2gNaF, 22.8gNH
4br, mixes, grinding, crosses 200 eye mesh screens, obtains brazing flux fine powder B5.
Get the A4 of 75g, the B5 Homogeneous phase mixing of 25g, compressing, sinter in vacuum furnace, sintering temperature 250 DEG C, keep 10mins, be fired into composite ingot.
Composite ingot is repeatedly extruded, solid metal silk D5 that drawing obtains 1.0mm diameter.
2, the preparation of solar cell
The polysilicon chip specification adopted is: 156 × 156mm, thickness is 200 microns (before corrosion).After silicon wafer wool making, PN junction processed, coated with antireflection film, after whole shady face adopts silk screen printing back field aluminum paste (the 108C aluminium paste of the large standing grain science and technology in Taiwan) and dries, republish front side silver paste (the 17A silver slurry of Dupont company), after process of passing through tunnel stove sintering, possessed the cell piece of back of the body aluminium field and positive electricity polar curve.D5 is placed in welder heating muff, the temperature of heating muff is 250 DEG C, and the angle that heating muff heating muff and cell piece surface are formed is 45 °, and the vertical range on heating muff least significant end and cell piece surface is 0.1mm; The temperature of electric soldering bit is 410 DEG C, and electric soldering iron tip inclined-plane and the angle that formed of cell piece surface are 30 °, electric soldering iron tip inclined-plane be 0.1mm with the vertical range on cell piece surface foremost, the distance between heating muff and electric soldering iron tip is 20mm; Be placed on by cell piece on jig, the translational speed of jig is 40mm/s; The compensation temperature of jig is 120 DEG C.Back electrode band of the present invention is continuous band, in whole aluminium back surface field surface distributed three.
The battery sample that the present embodiment obtains is designated as S5.
Comparative example 1
This comparative example is for explaining that the employing silk screen printing back silver slurry of prior art obtains back electrode and the crystal-silicon solar cell DS1 containing this back electrode.
The polysilicon chip specification adopted is: 156 × 156mm.Thickness is 200 microns (before corrosion), and before printing, thickness is 180 microns.After by silicon wafer wool making, PN junction processed, coated with antireflection film, first adopt silk screen printing back silver slurry (the PV505 silver slurry of Dupont company), carry on the back silver-colored structure and adopt four sections, three line system (namely carrying on the back silver is three), printing weight in wet base is 0.040g.Dry, in the remaining shady face part of back of the body silver slurry, printing back field aluminum paste (Taiwan large standing grain science and technology 108C aluminium paste), after oven dry, again at phototropic face printing front side silver paste (Dupont company 17A silver slurry), after continuous tunnel furnace sintering, obtain the cell piece possessing aluminium back surface field, silver-colored back electrode line and front electrode line.
Comparative example 2
The method in CN102810344A is adopted to prepare crystal-silicon solar cell DS2.
performance test
1, surface appearance: adopt 10 times of magnifying glasses to observe back electrode surface appearances, whether smooth, with or without plot point and hole.If smooth surface, without the phenomenon such as plot point and hole, be then designated as OK, otherwise be designated as NG.The results are shown in Table 1.
2, weld strength: select victory footpath between fields, Shanghai 2*0.2mm tin lead welding band, post-drying is soaked with Henkel X32-10I type scaling powder, then 330, manual welding is carried out to the back electrode prepared, after cell piece cools naturally, the electrode using mountain degree SH-100 puller system to connect along 135 ° of direction butt welding carries out tensile test.The results are shown in Table 1.
3, electricity conversion: adopt single flash operation simulation test instrument to carry out test to each cell piece and obtain.Test condition is standard test condition (STC): light intensity: 1000W/m
2; Spectrum: AM1.5; Temperature: 25 DEG C.The results are shown in Table 1.
Table 1
。
As can be seen from Table 1, carry out the welding of back electrode with back electrode of solar cell wire of the present invention, its weld strength is high.The present invention's simultaneously is non-silver paste, and cost is low.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (15)
1. a back electrode of solar cell wire, is characterized in that: this wire comprises metallized metal and brazing flux; Described brazing flux comprises reactant, reaction promoter and wetting aid; Described reactant is ZnCl
2, SnCl
2and CdCl
2in at least one; Described reaction promoter is NaF and/or KF; Described wetting aid is NH
4cl and/or NH
4br.
2. wire according to claim 1, is characterized in that: with described total weight wiry for benchmark, and the content of described brazing flux is 12-26wt%, and the content of described metal is 74-88wt%.
3. wire according to claim 1, is characterized in that: with the total weight of described reactant for benchmark, and the content of described reaction promoter is 1.5-3wt%, and the content of described wetting aid is 8-30wt%.
4. wire according to claim 1, it is characterized in that: described metal is ashbury metal, described ashbury metal is at least one in Sn-Pb, Sn-Zn, Sn-Bi, Sn-In, Sn-Pb-Zn, Sn-Ag, Sn-Cu, Sn-Ag-Cu, Sn-Ag-Bi, Sn-Zn-Bi, Sn-Zn-Ag, Sn-Zn-In, Sn-In-Bi.
5. wire according to claim 1, is characterized in that: described diameter wiry is 0.8-1.4mm.
6. the back electrode of solar cell preparation method wiry described in a claim 1-5 any one, it is characterized in that: the method comprises to be put into vacuum furnace by raw metal and smelt, be atomized into fine powder, then mix with brazing flux powder, compressing, vacuum-sintering becomes composite ingot, obtains wire by after composite ingot extruding and drawing.
7. a preparation method for back electrode of solar cell, is characterized in that, adopts the method for soldering wire to be coated on aluminium back surface field surface and namely obtains back electrode; Described wire is the wire described in claim 1-5 any one.
8. the preparation method of back electrode of solar cell according to claim 7, it is characterized in that, the method of described soldering is for be placed in heating muff by described wire, described heating muff is added drop-wise to aluminium back surface field surface after carrying out heating and melting to described wire, then use electric soldering iron tip that motlten metal silk is heated coating again, form back electrode on described aluminium back surface field surface.
9. the preparation method of back electrode of solar cell according to claim 8, is characterized in that, the temperature of described aluminium back surface field is 100-150 DEG C, and the heating-up temperature of described heating muff is 200-450 DEG C.
10. the preparation method of back electrode of solar cell according to claim 8, is characterized in that, the angle that described heating muff and described aluminium back surface field surface are formed is 30-60 °.
The preparation method of 11. back electrode of solar cell according to claim 8, it is characterized in that, described electric soldering iron tip has the inclined-plane towards described aluminium back surface field surface, described inclined-plane be 0.1-0.2mm with the vertical range on described aluminium back surface field surface foremost, the vertical range on described heating muff least significant end and described aluminium back surface field surface is 0.1-0.5mm, and least significant end and the described electric soldering iron tip horizontal range foremost of described heating muff are 10-30mm.
The preparation method of 12. back electrode of solar cell according to claim 11, is characterized in that, the angle that described inclined-plane and described aluminium back surface field surface are formed is 25-35 °.
13. 1 kinds of back electrode of solar cell, is characterized in that, described back electrode is prepared by the method described in claim 6-12.
14. 1 kinds of solar battery sheets, comprise silicon chip, be positioned at the back of the body electric field of silicon chip back side, be positioned at the back electrode carried on the back on electric field and the positive electrode being positioned at front side of silicon wafer, it is characterized in that, described back electrode is back electrode of solar cell according to claim 13.
15. 1 kinds of solar modules, described solar module comprises the backboard, sealant layer, cell piece, sealant layer and the photic zone that stack gradually, it is characterized in that, described cell piece is solar battery sheet according to claim 14.
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| CN201410124550.4A CN104952508B (en) | 2014-03-28 | 2014-03-28 | A kind of back electrode of solar cell wire and preparation method, back electrode and preparation method, solar battery sheet and battery component |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101323065A (en) * | 2008-07-08 | 2008-12-17 | 郑州机械研究所 | Self-fluxing aluminum solder and method for preparing the same |
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