CN104917052A - Variable-period tilted grating laser and preparation method thereof - Google Patents
Variable-period tilted grating laser and preparation method thereof Download PDFInfo
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- CN104917052A CN104917052A CN201510388711.5A CN201510388711A CN104917052A CN 104917052 A CN104917052 A CN 104917052A CN 201510388711 A CN201510388711 A CN 201510388711A CN 104917052 A CN104917052 A CN 104917052A
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Abstract
The invention relates to a preparation method of a variable-period tilted grating laser. The preparation method is characterized in that an n- type confining layer, an n-type waveguide layer, an active layer, a p- type waveguide layer, a p- type confining layer, and a p-type contact layer grow on a substrate successively. Two tilted grating bars are prepared on the p- type contact layer, the p- type confining layer, and the p- type waveguide layer; and a tilted injection region is formed between the two grating bars. One grating bar has a tilted variable-period grating structure in horizontal distribution and the other grating bar also has a tilted variable-period grating structure in horizontal distribution. Insulating layers are manufactured on thetilted variable-period grating structures in horizontal distribution; positive electrodes grow on the tilted variable-period grating structures and the injection region between the structures; thickness reduction and polishing are carried out on the substrate; a back electrode is manufactured at the back of the substrate after thickness reduction and polishing; annealing and cleavage are carried out to form a rectangular chip, thereby completing preparation.
Description
Technical field
The present invention relates to high-performance laser field, particularly a kind of have narrow linewidth, high side mode suppression ratio, the variable period oblique raster laser of low divergence and preparation method.
Background technology
Semiconductor laser has that power output is high, volume is little, lightweight, pumping efficiency advantages of higher, and especially semiconductor edge-emitting laser is in high efficiency, and high power laser output facet has great advantage.
The Guidance-Mechanism that semiconductor laser adopts usually is total internal reflection.In these structures, at specific wavelength, we can obtain single mode operation by the refringence controlled between the waveguide heart and limiting layer.For a wide bar (> 20 μm of mode width) single mode operation, needing the refractive index contrast (Δ n < 10-4) that is very little. this weak refractive index official post laser is responsive especially for the index disturbance under operating state.In order to overcome this problem, be applied to large area with the light that this periodic structure of Bragg reflector instead of total reflection structure limit in transverse waveguide structure, edge emitting and surface-emitting laser.These structures do not need very little refractive index contrast and can obtain a single transverse mode be distributed in whole laser, and can in high power situation steady operation.
This structure by grating restriction lateral light pattern is the angle grating distributed feedback semiconductor laser proposed by people such as the Lang of national university of Israel the earliest, a uniform horizontal raster provides Waveguide Mechanism in such an embodiment, and the pattern wanted is selected in face, angle chamber.In this optical grating construction, the resonance condition of demand fulfillment horizontal direction obtains a low-loss optical mode.But what this oblique raster structure reported adopted mostly is secondary epitaxy technology, first in the ducting layer near active area, etch the Bragg grating in a certain angle with cleavage surface, then grown other layers of laser epitaxial structure by secondary epitaxy, then make the injection region consistent with burying grating slope direction in P type contact layer.
In the present invention, we are on the epitaxial wafer of laser, the optical grating construction on appearing, and this structure comprises an inclination injection region 22 wide, have certain angle with cleavage surface.The both sides of injection region are distributed with the variable period grating 21 and 23 of the cross direction profiles of inclination, make the reflectance spectrum of whole device narrow as much as possible, thus select limited transverse mode, obtain high performance laser.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of variable period oblique raster laser, and this laser can obtain the characteristic of narrow linewidth, high side mode suppression ratio, low divergence.
For achieving the above object, this programme provides a kind of preparation method of variable period oblique raster laser, comprises the steps:
Step 1: grow n-type limiting layer, n-type ducting layer, active layer, p-type ducting layer, p-type limiting layer, p-type contact layer on a substrate successively, the thickness of this p-type contact layer is 100nm-200nm;
Step 2: on p-type contact layer, p-type limiting layer and p-type ducting layer, photoetching and dry etching method interval is adopted to produce inclination two gratings strips, etching depth is greater than p-type contact layer and p-type limiting layer thickness sum, be less than p-type contact layer, p-type limiting layer and p-type waveguide layer thickness sum, the injection region for tilting between this two gratings strips; The part of gratings strips is the variable period optical grating construction of the cross direction profiles tilted, and the part of another gratings strips is the variable period optical grating construction of the cross direction profiles tilted;
Step 3: make insulating barrier on the variable period optical grating construction of cross direction profiles of inclination and the variable period optical grating construction of the cross direction profiles of inclination;
Step 4: grow positive electrode on the variable period optical grating construction of the cross direction profiles tilted and the injection region between them;
Step 5: by substrate thinning polishing;
Step 6: the back side of the substrate after attenuated polishing makes back electrode;
Step 7: annealing, is cleaved into the chip of rectangle, completes preparation.
The present invention also provides a kind of variable period oblique raster laser, comprising:
One substrate;
One n-type limiting layer, grows on substrate, and its refractive index is lower than substrate and n-type ducting layer;
One n-type ducting layer, grows on n-type limiting layer;
One active layer, its emission wavelength covers near-infrared to far infrared band, is quantum well, quantum dot and interband cascade structure;
One p-type ducting layer, grows on active layer;
One p-type limiting layer, grows on p-type ducting layer, and its refractive index is lower than substrate and p-type ducting layer;
One p-type contact layer, grows on p-type limiting layer, and the thickness of this p-type contact layer is 100nm-200nm:
Wherein p-type contact layer is etched with two oblique light grizzly bars downwards, etching depth is greater than p-type contact layer and p-type limiting layer thickness sum, is less than p-type contact layer, p-type limiting layer and p-type waveguide layer thickness sum, the injection region for tilting between this two gratings strips; The part of gratings strips is the variable period optical grating construction of the cross direction profiles tilted, and the part of another gratings strips is the variable period optical grating construction of the cross direction profiles tilted.
As can be seen from technique scheme, the present invention has following beneficial effect:
1, this variable period oblique raster laser provided by the invention can obtain narrow live width and little horizontal divergence angle by the structure on face, is convenient to integrated.
2, this variable period oblique raster laser provided by the invention can adopt higher order gratings, reduces the difficulty of making.
3, this variable period oblique raster laser provided by the invention can do grating in the place near face, chamber, will be optical coupling out inclination chamber, and realize bright dipping on face, and expand the range of application of this structure.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, variable period oblique raster laser provided by the invention is described in further detail, wherein:
Fig. 1 is the vertical view of variable period oblique raster laser in embodiment;
Fig. 2 is the end view of variable period oblique raster laser in embodiment;
Fig. 3 is the reflectance spectrum of variable period grating 21 when incident light and gratings strips angle theta are 15 ° of the cross direction profiles of embodiment medium dip;
Fig. 4 is the reflectance spectrum of variable period grating 23 when incident light and gratings strips angle theta are 15 ° of the cross direction profiles of embodiment medium dip;
Fig. 5 is total reflectance spectrum of the variable period grating 21 and 23 of the cross direction profiles of example structure medium dip;
Fig. 6 is the analog result of the vibration distribution of the light field of example structure;
Embodiment (must comprise all the elements in claim, the interspersed description adding a large amount of functions, effect, effect, unified each component names, adds label after title)
Refer to shown in Fig. 1 and Fig. 2, the invention provides a kind of preparation method of variable period oblique raster laser, comprise the steps:
Step 1: grow n-type limiting layer 2, n-type ducting layer 3, active layer 4, p-type ducting layer 5, p-type limiting layer 6, p-type contact layer 7 on a substrate 1 successively, the thickness of this p-type contact layer 7 is 100nm-200nm, wherein this variable period oblique raster laser is the structural design on a kind of, and its backing material is GaAs, InP or GaN;
Step 2: on p-type contact layer 7, p-type limiting layer 6 and p-type ducting layer 5, photoetching and dry etching method interval is adopted to produce oblique light grizzly bar 211,231, etching depth is greater than p-type contact layer 7 and p-type limiting layer 6 thickness sum, is less than p-type contact layer 7, p-type limiting layer 6 and p-type ducting layer 5 thickness sum.Injection region 22 for tilting between this gratings strips 211 and gratings strips 231.The part of gratings strips 211 is the variable period optical grating construction 21 of the cross direction profiles tilted, and the part of gratings strips 231 is the variable period optical grating construction 23 of the cross direction profiles tilted, and the angle between the injection region 22 of its medium dip and the cleavage surface normal of laser is 5o-20o.The gratings strips 211 and 231 of the variable period optical grating construction 21 and 23 of the cross direction profiles of its medium dip is parallel to injection region 22, and screen periods meets formula λ=2n Λ sin θ/m, wherein λ is lambda1-wavelength, n is the refractive index of material, Λ is screen periods, θ is the angle between incident light and gratings strips, and m is grating progression.Both sides, injection region 22 distribution of its medium dip be the grating of variable period, both sides grating is different, while the uniform grating of to be the cycle be Λ 1, the uniform grating of another side to be the cycle be Λ 2, both sides, injection region 22 distribution of this inclination be the grating of variable period, the grating on both sides is identical, is all the grating changed to some extent in the cycle.The variable period grating of both sides, injection region 22 distribution of this inclination is low order grating or higher order gratings, and the injection region 22 of this inclination is adding grating near face, chamber place, selects single longitudinal mode to export or coupling output (not shown);
Step 3: make insulating barrier 8 on the variable period optical grating construction 21 and the variable period optical grating construction 23 of cross direction profiles that tilts of the cross direction profiles tilted, this insulating layer material is SiO2 or Si3N4;
Step 4: grow positive electrode 9 on the variable period optical grating construction 21,23 of the cross direction profiles tilted and the injection region 22 between them, electrode material is TiPtAu or TiPt;
Step 5: by substrate 1 attenuated polishing to 90-150 μm;
Step 6: the back side of the substrate 1 after attenuated polishing makes back electrode 10;
Step 7: annealing, is cleaved into the chip of rectangle, completes preparation.
Refer to shown in Fig. 1 and Fig. 2, the present invention also provides a kind of variable period oblique raster laser, comprising:
One substrate 1, this variable period oblique raster laser is the structural design on a kind of, is applicable to the epitaxial wafer of GaAs base, InP-base or GaN base material system;
One n-type limiting layer 2, on substrate 1, its refractive index is lower than substrate 1 and n-type ducting layer 3 in growth;
One n-type ducting layer 3, grows on n-type limiting layer 2;
One active layer 4, its emission wavelength covers near-infrared to far infrared band, is quantum well, quantum dot and interband cascade structure;
One p-type ducting layer 5, grows on active layer 4;
One p-type limiting layer 6, grows on p-type ducting layer 5, and its refractive index is lower than substrate 1 and p-type ducting layer 5;
One p-type contact layer 7, grows on p-type limiting layer 6, and the thickness of this p-type contact layer 7 is 100nm-200nm;
Wherein p-type contact layer 7 is etched with two oblique light grizzly bars 211,231 downwards, etching depth is greater than p-type contact layer 7 and p-type limiting layer 6 thickness sum, is less than p-type contact layer 7, p-type limiting layer 6 and p-type ducting layer 5 thickness sum.Injection region 22 for tilting between this gratings strips 211 and gratings strips 231.The part of gratings strips 211 is the variable period optical grating construction 21 of the cross direction profiles tilted, the part of gratings strips 231 is the variable period optical grating construction 23 of the cross direction profiles tilted, angle between the injection region 22 of its medium dip and the cleavage surface normal of laser is 5 °-20 °, the gratings strips 211 and 231 of the variable period optical grating construction 21 and 23 of the cross direction profiles of its medium dip is parallel to injection region 22, and screen periods meets formula λ=2n Λ sin θ/m, wherein λ is lambda1-wavelength, n is the refractive index of material, Λ is screen periods, θ is the angle between incident light and gratings strips, m is grating progression.Both sides, injection region 22 distribution of its medium dip be the grating of variable period, both sides grating is different, the uniform grating of to be the cycle be Λ 1, the uniform grating of another side to be the cycle be Λ 2; Both sides, injection region 22 distribution of this inclination be the grating of variable period, the grating on both sides is identical, is all the grating changed to some extent in the cycle.The variable period grating of both sides, injection region 22 distribution of this inclination is low order grating or higher order gratings, and the injection region 22 of this inclination is adding grating near face, chamber place, selects single longitudinal mode to export or coupling output (not shown).
Single transverse mode can be realized by the injection region that tilts and grating region to export, thus obtain the near field distribution of class Gauss, the far-field divergence angle of single lobe far field distribution and nearly diffraction limit.By adding grating (not shown) in inclination injection region 22 near face, chamber place, this grating can be bar shaped grating, also can be the arc grating with certain bending radius.The edge emitting that the grating at this face, chamber place can make device realize single longitudinal mode exports, or by the grating at rational design face, chamber place, the coupling surface realizing light exports, and obtains single longitudinal mode.
Simultaneously when light incides on grating at a certain angle, because screen periods meets formula λ=2n Λ sin θ/m, during known incidence at a certain angle, screen periods is large compared with the screen periods of vertical incidence gained, can reduce the difficulty of making.And higher order gratings has narrower reflectance spectrum FWHM compared to low order grating, be not only conducive to improving spectral purity and more reduce requirement to manufacture craft, reduce cost of manufacture.And in light vibrates in an inclined manner in chamber, ability return cavity relaying persistent oscillation must be effectively fed back by grating, therefore light can expand in the grating region beyond injection region when vibrating in chamber, the yardstick that optics is vibrated and the yardstick of injection region not quite identical, the yardstick of light generation is greater than the yardstick of injection region, thus realizes little far-field divergence angle.
Embodiment
As shown in Figure 1, for the vertical view of designed variable period oblique raster laser, comprise the injection region 22 of inclination, namely the cleavage surface of this injection region and laser has certain angle theta, the Injection Current when devices function, the variable period grating 21 and 23 of the cross direction profiles that the both sides 22 tilt, the direction of gratings strips is parallel to the bar direction of injection region.
As shown in Figure 2, for the end view of designed variable period oblique raster laser, the extension basic structure of device is simply depicted in figure, embodiment employing emission wavelength is the epitaxial wafer of the general semiconductor laser of the GaAs substrate of 920nm, and on GaAs substrate 1, growth has n-type limiting layer 2, n-type ducting layer 3, active layer 4, p-type ducting layer 5, p-type limiting layer 6, p-type contact layer 7 successively.This structure is achieved in the following ways.First injection region 22 is etched by basic photoetching, ICP technique, and the variable period grating 21 and 23 of the cross direction profiles tilted, then whole epitaxial wafer grows one deck insulating material, here can be silicon dioxide or silicon nitride, by photoetching and ICP etching, the silicon dioxide on injection region 22 is etched away again, expose epitaxial wafer, finally on inclination injection region 22 and the variable period grating 21 and 23 of cross direction profiles that tilts, grow TiPtAu material as positive electrode, after substrate 1 attenuated polishing to 130 μm at its back side growth gold germanium nickel gold copper-base alloy as back electrode.
As shown in Figure 3, be the reflectance spectrum of variable period grating 21 when incident light and gratings strips angle theta are 15 ° of the cross direction profiles of inclination, the wavelength that its reflection peak is corresponding is 920.2nm.The full width at half maximum (FWHM) of reflectance spectrum is 0.9nm.Owing to being higher order gratings, the periods lambda 1 of the variable period grating 21 of the cross direction profiles tilted here is 9 μm, and periodicity is 80.
As shown in Figure 4, be the reflectance spectrum of variable period grating 22 when incident light and gratings strips angle theta are 15 ° of the cross direction profiles of inclination, the wavelength that its reflection peak is corresponding is 921.1nm.The full width at half maximum of reflectance spectrum is 0.55nm.In order to make variable period grating 21 and 23 reflectivity of the cross direction profiles of inclination match, the grating period A 2 of the variable period grating 23 of the cross direction profiles of inclination is here 13 μm, and periodicity is 90.
As shown in Figure 5, for the variable period grating 21 (i.e. Fig. 3) of cross direction profiles of inclination and the superposition of the reflectance spectrum of 23 (i.e. Fig. 4), react the feedback to wavelength when two gratings participate in feeding back jointly, the FWHM of its reflectance spectrum is 0.5nm, be better than the feedback of variable period grating 21 pairs of wavelength of the cross direction profiles of inclination, comparable with the feedback of variable period grating 22 pairs of wavelength of the cross direction profiles tilted.But, if both sides, injection region are all the variable period gratings 22 of the cross direction profiles tilted, then device dimension can be made to become large due to the increase of higher order gratings periodicity.
As shown in Figure 6, for by software simulation when grating logarithm is fewer, light vibrates with Zig-Zag form in variable period oblique raster.Known by simulating, light incides grating with the angle of design in communication process, and is fed back.As can be seen from the figure, the exiting surface place in chamber shown in the figure, due to the feedback of grating, makes the optical depth of vibration enter grating inside, extends the area of bright dipping, injection region and light generation district are not overlapped.Thus large near field can be obtained, and then obtain smaller horizontal far-field divergence angle.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a preparation method for variable period oblique raster laser, comprises the steps:
Step 1: grow n-type limiting layer, n-type ducting layer, active layer, p-type ducting layer, p-type limiting layer, p-type contact layer on a substrate successively, the thickness of this p-type contact layer is 100nm-200nm;
Step 2: on p-type contact layer, p-type limiting layer and p-type ducting layer, photoetching and dry etching method interval is adopted to produce inclination two gratings strips, etching depth is greater than p-type contact layer and p-type limiting layer thickness sum, be less than p-type contact layer, p-type limiting layer and p-type waveguide layer thickness sum, the injection region for tilting between this two gratings strips; The part of gratings strips is the variable period optical grating construction of the cross direction profiles tilted, and the part of another gratings strips is the variable period optical grating construction of the cross direction profiles tilted;
Step 3: make insulating barrier on the variable period optical grating construction of cross direction profiles of inclination and the variable period optical grating construction of the cross direction profiles of inclination;
Step 4: grow positive electrode on the variable period optical grating construction of the cross direction profiles tilted and the injection region between them;
Step 5: by substrate thinning polishing;
Step 6: the back side of the substrate after attenuated polishing makes back electrode;
Step 7: annealing, is cleaved into the chip of rectangle, completes preparation.
2. the preparation method of variable period oblique raster laser according to claim 1, the angle between the injection region of its medium dip and the cleavage surface normal of laser is 5 °-20 °.
3. the preparation method of variable period oblique raster laser according to claim 1, two gratings strips of the variable period optical grating construction of the cross direction profiles of its medium dip are parallel to injection region, and screen periods meets formula λ=2n Λ sin θ/m, wherein λ is lambda1-wavelength, n is the refractive index of material, Λ is screen periods, and θ is the angle between incident light and gratings strips, and m is grating progression.
4. the preparation method of variable period oblique raster laser according to claim 1, both sides, the injection region distribution of its medium dip be the grating of variable period, both sides grating is different, while the uniform grating of to be the cycle be Λ 1, the uniform grating of another side to be the cycle be Λ 2, both sides, the injection region distribution of this inclination be the grating of variable period, the grating on both sides is identical, it is all the grating changed to some extent in the cycle, the variable period grating of both sides, the injection region distribution of this inclination is low order grating or higher order gratings, the injection region of this inclination is adding grating near face, chamber place, single longitudinal mode is selected to export or coupling output.
5. the preparation method of variable period oblique raster laser according to claim 1, wherein this variable period oblique raster laser is the structural design on a kind of, and its backing material is GaAs, InP or GaN.
6. a variable period oblique raster laser, comprising:
One substrate;
One n-type limiting layer, grows on substrate, and its refractive index is lower than substrate and n-type ducting layer;
One n-type ducting layer, grows on n-type limiting layer;
One active layer, its emission wavelength covers near-infrared to far infrared band, is quantum well, quantum dot and interband cascade structure;
One p-type ducting layer, grows on active layer;
One p-type limiting layer, grows on p-type ducting layer, and its refractive index is lower than substrate and p-type ducting layer;
One p-type contact layer, grows on p-type limiting layer, and the thickness of this p-type contact layer is 100nm-200nm;
Wherein p-type contact layer is etched with two oblique light grizzly bars downwards, etching depth is greater than p-type contact layer and p-type limiting layer thickness sum, is less than p-type contact layer, p-type limiting layer and p-type waveguide layer thickness sum, the injection region for tilting between this two gratings strips; The part of gratings strips is the variable period optical grating construction of the cross direction profiles tilted, and the part of another gratings strips is the variable period optical grating construction of the cross direction profiles tilted.
7. variable period oblique raster laser according to claim 1, the angle between the injection region of its medium dip and the cleavage surface normal of laser is 5 °-20 °.
8. variable period oblique raster laser according to claim 1, the variable period optical grating construction of the cross direction profiles of its medium dip and two gratings strips be parallel to injection region, and screen periods meets formula λ=2n Λ sin θ/m, wherein λ is lambda1-wavelength, n is the refractive index of material, Λ is screen periods, and θ is the angle between incident light and gratings strips, and m is grating progression.
9. variable period oblique raster laser according to claim 1, both sides, the injection region distribution of its medium dip be the grating of variable period, both sides grating is different, while the uniform grating of to be the cycle be Λ 1, the uniform grating of another side to be the cycle be Λ 2, both sides, the injection region distribution of this inclination be the grating of variable period, the grating on both sides is identical, it is all the grating changed to some extent in the cycle, the variable period grating of both sides, the injection region distribution of this inclination is low order grating or higher order gratings, the injection region of this inclination is adding grating near face, chamber place, single longitudinal mode is selected to export or coupling output.
10. variable period oblique raster laser according to claim 1, wherein this variable period oblique raster laser is the structural design on a kind of, is applicable to the epitaxial wafer of GaAs base, InP-base or GaN base material system.
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| CN106300017A (en) * | 2016-09-07 | 2017-01-04 | 华中科技大学 | Multi-wavelength distributed feedback ridge waveguide semiconductor laser array and application |
| WO2020140286A1 (en) * | 2019-01-04 | 2020-07-09 | 华为技术有限公司 | Semiconductor laser, optical emission component, optical line terminal and optical network unit |
| WO2020151290A1 (en) * | 2019-01-22 | 2020-07-30 | 中国科学院半导体研究所 | On-chip integrated semiconductor laser structure and manufacturing method thereof |
| CN111600199A (en) * | 2020-06-02 | 2020-08-28 | 南京大学（苏州）高新技术研究院 | High-power semiconductor laser with limited long bandwidth |
| WO2020228233A1 (en) * | 2019-05-13 | 2020-11-19 | 苏州长光华芯半导体激光创新研究院有限公司 | High-power semiconductor chip and preparation method therefor |
| CN113258447A (en) * | 2021-05-18 | 2021-08-13 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser array and preparation method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106300017A (en) * | 2016-09-07 | 2017-01-04 | 华中科技大学 | Multi-wavelength distributed feedback ridge waveguide semiconductor laser array and application |
| CN106300017B (en) * | 2016-09-07 | 2019-11-19 | 华中科技大学 | Multi-wavelength distributed feed-back ridge waveguide semiconductor laser array and application |
| WO2020140286A1 (en) * | 2019-01-04 | 2020-07-09 | 华为技术有限公司 | Semiconductor laser, optical emission component, optical line terminal and optical network unit |
| CN112740492A (en) * | 2019-01-04 | 2021-04-30 | 华为技术有限公司 | Semiconductor laser, light emitting module, optical line terminal and optical network unit |
| WO2020151290A1 (en) * | 2019-01-22 | 2020-07-30 | 中国科学院半导体研究所 | On-chip integrated semiconductor laser structure and manufacturing method thereof |
| WO2020228233A1 (en) * | 2019-05-13 | 2020-11-19 | 苏州长光华芯半导体激光创新研究院有限公司 | High-power semiconductor chip and preparation method therefor |
| CN111600199A (en) * | 2020-06-02 | 2020-08-28 | 南京大学（苏州）高新技术研究院 | High-power semiconductor laser with limited long bandwidth |
| CN111600199B (en) * | 2020-06-02 | 2021-08-06 | 南京大学（苏州）高新技术研究院 | High-power semiconductor laser with limited long bandwidth |
| CN113258447A (en) * | 2021-05-18 | 2021-08-13 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser array and preparation method thereof |
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