CN104894515A - Electric-arc ion plating method for forming CuCr coating on surface of CuCr contact - Google Patents
Electric-arc ion plating method for forming CuCr coating on surface of CuCr contact Download PDFInfo
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- CN104894515A CN104894515A CN201510274170.3A CN201510274170A CN104894515A CN 104894515 A CN104894515 A CN 104894515A CN 201510274170 A CN201510274170 A CN 201510274170A CN 104894515 A CN104894515 A CN 104894515A
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Abstract
The invention relates to an electric-arc ion plating method for forming a CuCr coating on a surface of a CuCr contact, and belongs to the field of surface engineering. By taking a CuCr material as a target, a uniform and compact nano CuCr coating is obtained on the surface of the CuCr contact through an electric-arc ion plating process. According to the method disclosed by the invention, the thickness of the coating is controlled by the quantity of targets and film-coating time; the coating components are controlled by the Cr content of the target; and the Cr content of the target is not restricted. The CuCr coating obtained by the electric-arc ion plating method disclosed by the invention not only can improve the surface roughness of the contact material, but also can avoid influence of burrs generated by machining to interruption performance of the contact material.
Description
Technical field
The present invention relates to a kind of arc ions electroplating method forming CuCr coating in CuCr contact surface, belong to Surface Engineering field.
Background technology
Electrical contact is the core parts of power switch, and burden is switched on or switched off the task of circuit and load current, determines rupture capacity and the contact reliability of switch.CuCr alloy is the important breakthrough in power switch development history as the invention of contact material, it largely increases the performance of vacuum switch, through the lasting research and development of many decades, CuCr alloy instead of other material substantially, becomes the preferred material of mesohigh big current vacuum switch.
Sometimes in order to the anti-galvanic corrosion in order to improve electrical contact, antiwear property in prior art, often adopting and doing the trials such as Composite Coatings in contact surface, but have pollution to environment and technique is more complicated, energy consumption is larger.Metallic cementation method can prepare coating in contact surface, but due to plasma surface alloying process temperature high, workpiece distortion is large, thus uses and be restricted.The most regrettably, there are no about any record forming coating at CuCr contact in prior art, therefore need badly and solve this problem.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned defect, provides a kind of arc ions electroplating method forming CuCr coating in CuCr contact surface.The method not only can improve the surfaceness of contact material, and the burr that machining can also be avoided to produce is on the impact of its break performance.
The technical scheme that the present invention solves the employing of its technical problem is as follows: the arc ions electroplating method forming CuCr coating in CuCr contact surface, is characterized in that comprising:
1) immersed successively by CuCr contact in the groove filling agent for carbon hydrogen detergent and alcohol, carry out ultrasonic vibration cleaning, after having cleaned, CuCr contact being sent into drying tunnel, to carry out hot blast air-dry;
2) by through step 1) the CuCr contact that processes is placed within the vacuum cavity of the coating equipment being furnished with electric arc, is evacuated to 1.5 × 10
-2below Pa, pass into argon gas as ionization of gas to 20-25Pa, open pulsed bias power supply, glow discharge 5-10min produces plasma body, carries out activation cleaning to CuCr contact surface;
3) Cr transition layer is deposited after cleaning, select Cr post target as arc ion plating target, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 100-120mm, using argon gas as ionization of gas, matrix adds negative bias 450-550V, by glow discharge 10-15min, closes after deposition Cr transition layer;
4) arc ion plating target selects CuCr, be processed into the water-cooled arc target of 62mm × 40mm, target quantity is 2-5, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 150-165mm, connect arc light power supply, produce arc discharge between striking hook and target, single target working current is 50-70A, the target particle deposition that arc evaporation goes out is in CuCr contact surface, form the CuCr coating of even plating, time 80-100min, is determined by coating film thickness;
5) carry out anneal, then naturally cool to room temperature.
Preferably, the Cr content in described CuCr contact and CuCr target is 30wt%-40wt%.
In above-mentioned either a program preferably, in step 3) in, cavity air pressure is 0.4-0.8Pa, and sputtering current is 50-100A, and transition region thickness is 100-300nm.
In above-mentioned either a program preferably, in step 4) in, cavity air pressure is 0.4-0.8Pa, and pulsed negative bias is 450-550V, CuCr coat-thickness is 3-10 μm.
In above-mentioned either a program preferably, in step 5) in, annealing temperature is 300 ~ 500 DEG C, heat-up rate 5 ~ 15 DEG C/min, and soaking time is 1 ~ 2h.
Beneficial effect of the present invention:
1. control coat-thickness by target quantity and plated film time, control coated component by the Cr content of target, and the Cr content of target is unrestricted; The CuCr coating that arc ion plating obtains, not only can improve the surfaceness of contact material, the burr that machining can also be avoided to produce is on the impact of its break performance.
2. can be obtained the CuCr coating of different thickness by arc ions depositing process, 3-10 μm of thick coating can meet the service requirements of contact material.The density of film improves, and metal ionization level is high, is conducive to the homogeneity of film and target utilization is more high.
3. the performance such as CuCr contact surface hardness, conductance through the inventive method process improves, thus further increases the electrical property of contact material.
4. not only sedimentation rate is high for the method, but also energy-conservation, material-saving, pollution-free; With the product of the method processing, bright in color after polishing.
Brief Description Of Drawings
By the detailed description below in conjunction with accompanying drawing, aforesaid and other object, the feature and advantage of the present invention will become apparent.
Fig. 1 is the SEM shape appearance figure of coatingsurface;
Fig. 2 is another SEM shape appearance figure of coatingsurface.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described further.
Embodiment 1
Form the arc ions electroplating method of CuCr coating in CuCr contact surface, it is characterized in that comprising:
1) immersed successively by CuCr contact in the groove filling agent for carbon hydrogen detergent and alcohol, carry out ultrasonic vibration cleaning, after having cleaned, CuCr contact being sent into drying tunnel, to carry out hot blast air-dry;
2) by through step 1) the CuCr contact that processes is placed within the vacuum cavity of the coating equipment being furnished with electric arc, is evacuated to 1.5 × 10
-2below Pa, pass into argon gas as ionization of gas to 20Pa, open pulsed bias power supply, glow discharge 10min produces plasma body, carries out activation cleaning to CuCr contact surface;
3) deposit Cr transition layer after cleaning, select Cr post target as arc ion plating target, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 100mm, and using argon gas as ionization of gas, matrix adds negative bias 550V, by glow discharge 10min, close after deposition Cr transition layer; Wherein, cavity air pressure is 0.8Pa, and sputtering current is 50A, and transition region thickness is 300nm;
4) arc ion plating target selects CuCr, be processed into the water-cooled arc target of 62mm × 40mm, target quantity is 2, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 165mm, connect arc light power supply, produce arc discharge between striking hook and target, single target working current is 50A, the target particle deposition that arc evaporation goes out is in CuCr contact surface, form the CuCr coating of even plating, time 100min, is determined by coating film thickness; Wherein, cavity air pressure is 0.4Pa, and pulsed negative bias is 550V, CuCr coat-thickness is 3 μm.
5) carry out anneal, then naturally cool to room temperature.Wherein, annealing temperature is 500 DEG C, heat-up rate 5 DEG C/min, and soaking time is 2h.
Cr content in described CuCr contact and CuCr target is 30wt%.
Embodiment 2
Form the arc ions electroplating method of CuCr coating in CuCr contact surface, it is characterized in that comprising:
1) immersed successively by CuCr contact in the groove filling agent for carbon hydrogen detergent and alcohol, carry out ultrasonic vibration cleaning, after having cleaned, CuCr contact being sent into drying tunnel, to carry out hot blast air-dry;
2) by through step 1) the CuCr contact that processes is placed within the vacuum cavity of the coating equipment being furnished with electric arc, is evacuated to 1.5 × 10
-2below Pa, pass into argon gas as ionization of gas to 25Pa, open pulsed bias power supply, glow discharge 5min produces plasma body, carries out activation cleaning to CuCr contact surface;
3) deposit Cr transition layer after cleaning, select Cr post target as arc ion plating target, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 120mm, and using argon gas as ionization of gas, matrix adds negative bias 450V, by glow discharge 15min, close after deposition Cr transition layer; Wherein, cavity air pressure is 0.4Pa, and sputtering current is 100A, and transition region thickness is 100nm;
4) arc ion plating target selects CuCr, be processed into the water-cooled arc target of 62mm × 40mm, target quantity is 5, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 150mm, connect arc light power supply, produce arc discharge between striking hook and target, single target working current is 70A, the target particle deposition that arc evaporation goes out is in CuCr contact surface, form the CuCr coating of even plating, time 80min, is determined by coating film thickness; Wherein, cavity air pressure is 0.8Pa, and pulsed negative bias is 450V, CuCr coat-thickness is 10 μm.
5) carry out anneal, then naturally cool to room temperature.Wherein, annealing temperature is 300 DEG C, heat-up rate 15 DEG C/min, and soaking time is 1h.
Cr content in described CuCr contact and CuCr target is 40wt%.
Embodiment 3
Form the arc ions electroplating method of CuCr coating in CuCr contact surface, it is characterized in that comprising:
1) immersed successively by CuCr contact in the groove filling agent for carbon hydrogen detergent and alcohol, carry out ultrasonic vibration cleaning, after having cleaned, CuCr contact being sent into drying tunnel, to carry out hot blast air-dry;
2) by through step 1) the CuCr contact that processes is placed within the vacuum cavity of the coating equipment being furnished with electric arc, is evacuated to 1.5 × 10
-2below Pa, pass into argon gas as ionization of gas to 23Pa, open pulsed bias power supply, glow discharge 8min produces plasma body, carries out activation cleaning to CuCr contact surface;
3) deposit Cr transition layer after cleaning, select Cr post target as arc ion plating target, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 110mm, and using argon gas as ionization of gas, matrix adds negative bias 500V, by glow discharge 13min, close after deposition Cr transition layer; Wherein, cavity air pressure is 0.6Pa, and sputtering current is 80A, and transition region thickness is 200nm;
4) arc ion plating target selects CuCr, be processed into the water-cooled arc target of 62mm × 40mm, target quantity is 3, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 155mm, connect arc light power supply, produce arc discharge between striking hook and target, single target working current is 60A, the target particle deposition that arc evaporation goes out is in CuCr contact surface, form the CuCr coating of even plating, time 90min, is determined by coating film thickness; Wherein, cavity air pressure is 0.6Pa, and pulsed negative bias is 500V, CuCr coat-thickness is 7 μm.
5) carry out anneal, then naturally cool to room temperature.Wherein, annealing temperature is 400 DEG C, heat-up rate 10 DEG C/min, and soaking time is 1.5h.
Cr content in described CuCr contact and CuCr target is 35wt%.
The CuCr contact obtained by aforesaid method and the difference of contact of the prior art are see Fig. 1-2.
Results and analysis
Sample wire cutting machine after plating cuts first quarter moon shape fritter, inlay with synthetic resin moulding compound, with LEO438VP type its surface topography of scanning electron microscopic observation and section structure after grinding and polishing, Coating composition is surveyed with KEVEXSIGMA energy spectrometer, with 401MVD type digital display micro Vickers test coating microhardness, applied load 25g, dwell time 10s.
As can be seen from Fig. 1-2, coatingsurface is smooth, has macrobead to exist.This is determined by the feature of arc ion plating.In the plated film later stage, alloy liquid droplet launched by arc target, and these drops arrive when matrix surface solidifies and sprawl as lamellar, and the particle do not sprawled is rounded.Nearly interface, organize fine and closely woven, crystal grain is less; Nearly surface, tissue is in lamellar.Coating is made up of settled layer and transition layer.Transition layer (settled layer and basal body interface place) is organized as tiny crystal grain, its Crack cause is that the particle evaporated is tiny because plating initial stage target temperature is low, in substrate transport process, be subject to again Ar ion impact, further refinement, and at the plating initial stage, substrate temperature is also lower, after deposited particles arrives matrix, in the rapid forming core of matrix surface, crystallization, have little time to grow up, thus form fine grained texture.With deposition time increases, target temperature raises, and emission rate increases, and occurs macrobead " drop " transition, the coating deposited directly is paved, form layers lamellar structure.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention, every according in technical spirit of the present invention to any simple modification, equivalent variations that above embodiment is done, all fall within protection scope of the present invention.
Claims (5)
1. form an arc ions electroplating method for CuCr coating in CuCr contact surface, it is characterized in that comprising:
1) immersed successively by CuCr contact in the groove filling agent for carbon hydrogen detergent and alcohol, carry out ultrasonic vibration cleaning, after having cleaned, CuCr contact being sent into drying tunnel, to carry out hot blast air-dry;
2) by through step 1) the CuCr contact that processes is placed within the vacuum cavity of the coating equipment being furnished with electric arc, is evacuated to 1.5 × 10
-2below Pa, pass into argon gas as ionization of gas to 20-25Pa, open pulsed bias power supply, glow discharge 5-10min produces plasma body, carries out activation cleaning to CuCr contact surface;
3) Cr transition layer is deposited after cleaning, select Cr post target as arc ion plating target, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 100-120mm, using argon gas as ionization of gas, matrix adds negative bias 450-550V, by glow discharge 10-15min, closes after deposition Cr transition layer;
4) arc ion plating target selects CuCr, be processed into the water-cooled arc target of 62mm × 40mm, target quantity is 2-5, first it is cleaned wipe oil and impurity with acetone, target-substrate distance is from being 150-165mm, connect arc light power supply, produce arc discharge between striking hook and target, single target working current is 50-70A, the target particle deposition that arc evaporation goes out is in CuCr contact surface, form the CuCr coating of even plating, time 80-100min, is determined by coating film thickness;
5) carry out anneal, then naturally cool to room temperature.
2. the arc ions electroplating method forming CuCr coating in CuCr contact surface according to claim 1, is characterized in that the Cr content in described CuCr contact and CuCr target is 30wt%-40wt%.
3. the arc ions electroplating method forming CuCr coating in CuCr contact surface according to claim 1 and 2, is characterized in that in step 3) in, cavity air pressure is 0.4-0.8Pa, and sputtering current is 50-100A, and transition region thickness is 100-300nm.
4. the arc ions electroplating method forming CuCr coating in CuCr contact surface according to claim 3, is characterized in that in step 4) in, cavity air pressure is 0.4-0.8Pa, and pulsed negative bias is 450-550V, CuCr coat-thickness is 3-10 μm.
5. the arc ions electroplating method forming CuCr coating in CuCr contact surface according to claim 4, is characterized in that in step 5) in, annealing temperature is 300 ~ 500 DEG C, heat-up rate 5 ~ 15 DEG C/min, and soaking time is 1 ~ 2h.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731597A (en) * | 2017-10-27 | 2018-02-23 | 福达合金材料股份有限公司 | A kind of method for improving electrical contact material surface contact conditions |
| CN108103457A (en) * | 2017-12-30 | 2018-06-01 | 武汉大学 | A kind of self-lubricating nano composite coating and preparation method thereof |
| CN111074209A (en) * | 2019-12-27 | 2020-04-28 | 西安交通大学 | Surface coating of contact material of vacuum arc-extinguishing chamber and treatment method thereof |
| CN112518434A (en) * | 2020-10-20 | 2021-03-19 | 陕西斯瑞新材料股份有限公司 | Metal auxiliary machining process for removing burrs of CuCr contact by physical method |
| CN114196908A (en) * | 2021-11-30 | 2022-03-18 | 西安航天发动机有限公司 | Preparation method of aluminum coating on surface of high-strength steel |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6040618A (en) * | 1997-03-06 | 2000-03-21 | Micron Technology, Inc. | Multi-chip module employing a carrier substrate with micromachined alignment structures and method of forming |
| US20020112791A1 (en) * | 1999-06-02 | 2002-08-22 | Kardokus Janine K. | Methods of forming copper-containing sputtering targets |
| CN101353781A (en) * | 2008-09-22 | 2009-01-28 | 河南理工大学 | Method for ion plating wear resistant anti-electric corrosion alloy on pure copper surface |
| CN101899640A (en) * | 2010-07-28 | 2010-12-01 | 重庆理工大学 | Preparation method for copper-chromium alloy surface alloying |
| CN102522241A (en) * | 2011-12-12 | 2012-06-27 | 清华大学 | CuCr alloy contact material and preparation method thereof |
| DE102011082438B3 (en) * | 2011-09-09 | 2012-12-06 | Siemens Aktiengesellschaft | Contact for a vacuum interrupter and contact system |
| CN103628024A (en) * | 2013-11-15 | 2014-03-12 | 桂林电子科技大学 | Technology for depositing titanium nitride film on surface of 4Cr13 stainless steel vernier caliper |
-
2015
- 2015-05-27 CN CN201510274170.3A patent/CN104894515A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6040618A (en) * | 1997-03-06 | 2000-03-21 | Micron Technology, Inc. | Multi-chip module employing a carrier substrate with micromachined alignment structures and method of forming |
| US20020112791A1 (en) * | 1999-06-02 | 2002-08-22 | Kardokus Janine K. | Methods of forming copper-containing sputtering targets |
| CN101353781A (en) * | 2008-09-22 | 2009-01-28 | 河南理工大学 | Method for ion plating wear resistant anti-electric corrosion alloy on pure copper surface |
| CN101899640A (en) * | 2010-07-28 | 2010-12-01 | 重庆理工大学 | Preparation method for copper-chromium alloy surface alloying |
| DE102011082438B3 (en) * | 2011-09-09 | 2012-12-06 | Siemens Aktiengesellschaft | Contact for a vacuum interrupter and contact system |
| CN102522241A (en) * | 2011-12-12 | 2012-06-27 | 清华大学 | CuCr alloy contact material and preparation method thereof |
| CN103628024A (en) * | 2013-11-15 | 2014-03-12 | 桂林电子科技大学 | Technology for depositing titanium nitride film on surface of 4Cr13 stainless steel vernier caliper |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731597A (en) * | 2017-10-27 | 2018-02-23 | 福达合金材料股份有限公司 | A kind of method for improving electrical contact material surface contact conditions |
| CN108103457A (en) * | 2017-12-30 | 2018-06-01 | 武汉大学 | A kind of self-lubricating nano composite coating and preparation method thereof |
| CN108103457B (en) * | 2017-12-30 | 2020-01-14 | 武汉大学 | Self-lubricating nano composite coating and preparation method thereof |
| CN111074209A (en) * | 2019-12-27 | 2020-04-28 | 西安交通大学 | Surface coating of contact material of vacuum arc-extinguishing chamber and treatment method thereof |
| CN112518434A (en) * | 2020-10-20 | 2021-03-19 | 陕西斯瑞新材料股份有限公司 | Metal auxiliary machining process for removing burrs of CuCr contact by physical method |
| CN112518434B (en) * | 2020-10-20 | 2021-10-01 | 陕西斯瑞新材料股份有限公司 | Metal auxiliary machining process for removing burrs of CuCr contact by physical method |
| CN114196908A (en) * | 2021-11-30 | 2022-03-18 | 西安航天发动机有限公司 | Preparation method of aluminum coating on surface of high-strength steel |
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Application publication date: 20150909 |