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CN104835997A - Four-phase RF device - Google Patents

Four-phase RF device Download PDF

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Publication number
CN104835997A
CN104835997A CN201510108701.1A CN201510108701A CN104835997A CN 104835997 A CN104835997 A CN 104835997A CN 201510108701 A CN201510108701 A CN 201510108701A CN 104835997 A CN104835997 A CN 104835997A
Authority
CN
China
Prior art keywords
phase
frequency devices
radio
degree
phase place
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510108701.1A
Other languages
Chinese (zh)
Inventor
阎跃军
彭志珊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHENZHEN YANTEL HIGH-FREQUENCY TECHNOLOGY Co Ltd
Yantel Corp
Original Assignee
SHENZHEN YANTEL HIGH-FREQUENCY TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHENZHEN YANTEL HIGH-FREQUENCY TECHNOLOGY Co Ltd filed Critical SHENZHEN YANTEL HIGH-FREQUENCY TECHNOLOGY Co Ltd
Priority to CN201510108701.1A priority Critical patent/CN104835997A/en
Publication of CN104835997A publication Critical patent/CN104835997A/en
Pending legal-status Critical Current

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Abstract

The present invention discloses a four-phase RF device, comprising a crystal chip, and a Balun, two couplers and two loads which are manufactured on the crystal chip; wherein two output ends of the Balun are respectively connected with input ends of the two couplers, isolation ends of the two couplers are respectively connected with one load; an input end of the Balun is used as an input end of the four-phase RF device, straight-through ends and coupling ends of the two couplers are respectively used as four output ends of the four-phase RF device.

Description

A kind of four phase place radio-frequency devices
[technical field]
The present invention relates to satellite navigation system, communication system, radar system.Be particularly useful for the comprehensive reception antenna of satellite navigation.
[background technology]
For static or in moving receiving equipment, wish comprehensive (360 degree) Received signal strength, in order to reach comprehensive reception, the i.e. reception of 0 degree of phase place, 90 degree of phase places, 180 degree of phase places and 270 degree of phase places, need four phase shifters or multiple coupler, its cost is high, and volume is large, operating frequency band is limited, is difficult to meet the requirement that volume is little, cost is low, constant power, working band are wide simultaneously.
[summary of the invention]
For realizing object of the present invention, providing a kind of four phase place radio-frequency devices, being intended to solve existing radio-frequency devices operating frequency band limited, be difficult to the problem simultaneously meeting the requirement that volume is little, cost is low, constant power, working band are wide.
The technical solution adopted in the present invention is: a kind of four phase place radio-frequency devices, it comprises: crystal chip, and be produced on the Ba Lun in this crystal chip, two couplers and two loads, two outputs of this Ba Lun are connected with the input of these two couplers respectively, and the isolation end of these two couplers is connected to a load respectively.
The invention has the beneficial effects as follows: a constant power can be obtained, four phase place radio-frequency devices of the output of four phase places (0 degree, 90 degree, 180 degree, 270 degree), its integrated level is high, volume little work bandwidth, be particularly useful for comprehensive Signal reception or transmitting antenna, does not need external load.
Therefore four phase place radio-frequency devices provided by the invention have the following advantages:
(1) can be used for comprehensive reception/transmitting antenna;
(2) integrated level is high, and volume is little;
(3) can four phase outputs (0 degree, 90 degree, 180 degree, 270 degree);
(4) phase accuracy does not change with the change of incoming frequency, and phase accuracy is high;
(5) cost is low.
[accompanying drawing explanation]
Fig. 1 is the electrical block diagram of a kind of four phase place radio-frequency devices of first embodiment of the invention.
Fig. 2 be one this four phase places radio-frequency devices (this crystal chip) is encapsulated after the bottom view (schematic diagram looked up from bottom) of radio frequency integrated circuit.
[embodiment]
Refer to Fig. 1, it is the electrical block diagram of a kind of four phase place radio-frequency devices of first embodiment of the invention.Crystal chip on four phase place radio-frequency devices is manufactured with a Ba Lun 1, two couplers 2,3, and two loads 4-1,4-2.The input 1-1 of this Ba Lun 1 is as the input 1-1 of these four phase place radio-frequency devices, two balance output end 1-2 and 1-3 of this Ba Lun 1 are connected respectively to input 2-1 and 3-1 of these two couplers 2 and 3, such as, the output 1-2 of 0 degree of this Ba Lun 1 is connected to the input 2-1 of this coupler 2, and the output 1-3 of 180 degree of this Ba Lun 1 is connected to the input 3-1 of this coupler 3; The straight-through end 2-3 of this coupler 2, the coupled end 2-4 of this coupler 2 are as two outputs of this four phase places radio-frequency devices.The phase 90 degree of straight-through end 2-3 and coupled end 2-4; The straight-through end 3-3 of this coupler 3, the coupled end 3-4 of this coupler 3 are as two other output of this four phase places radio-frequency devices.Equally, the phase of this straight-through end 3-3 and coupled end 3-4 is also 90 degree.The isolation end 2-2 of this coupler 2 is connected with one end of this load 4-1, and the other end of this load 4-1 is earth terminal 5-2, and the isolation end 3-2 of this coupler 3 is connected with one end of this load 4-2, and the other end of this load 4-2 is earth terminal 5-3.This crystal chip of such designing and making is exactly four phase place radio-frequency devices, the phase 90 degree of every two adjacent outputs.This crystal chip is exactly one after encapsulation, and integrated level is high, volume is little, do not need the radio frequency integrated circuit (IC) of four phase place radio-frequency devices of external load again.
The earth terminal 5-1 of this Ba Lun 1, earth terminal 5-2 with 5-3 of this load are finally connected with the earth terminal of application apparatus.The type of coupler 2 and 3 selects three-dB coupler (sometimes can be described as 90 degree of electric bridges), the i.e. phase 90 degree of the straight-through end 2-3 of coupler 2 and the coupled end 2-4 of this coupler 2, the phase 90 degree of the straight-through end 3-3 of coupler 3 and the coupled end 3-4 of this coupler 3, and the phase 180 degree of two of Ba Lun 1 output 1-2 and 1-3, so just can obtain the radio-frequency devices of four phase place (output), the phase of adjacent output 90 degree.50 ohm load are selected in this load.Certainly, this coupler 2 and 3 also can select directional coupler, but requires that the phase difference that it leads directly to end and coupled end is 90 degree or is good close to 90 degree.This load 4-1 and 4-2 is also not limited to 50 ohm load, but usually selects 50 ohm load to be good.
Consider easy to use, when designing this crystal chip, by the method for the pin of output by adjacent output phase difference 90 degree, by the phase difference of output order by carrying out wires design clockwise or counterclockwise, namely 0 degree (360 degree) ,-90 degree ,-180 degree, the clockwise wires design pin of order of-270 degree, or carry out wires design counterclockwise, i.e.-270 degree ,-180 degree,-90 degree, the counterclockwise wires design pin of order of 0 degree (360 degree).Namely by four phase place size orders clockwise or arranged counterclockwise, except earth terminal, the phase difference of each adjacent output is 90 degree to the order of the pin of this crystal chip after encapsulating front or encapsulation.
This crystal chip just becomes a kind of four phase place radio-frequency devices, and the pin of the radio frequency integrated circuit after being encapsulated by this four phase places radio-frequency devices is easy to use and installs.
Fig. 2 be one this four phase places radio-frequency devices is encapsulated after the bottom view (schematic diagram looked up from bottom) of radio frequency integrated circuit.In one embodiment, four phase place radio-frequency devices after this encapsulation are of a size of 3mm (length) * 3mm (wide) * 0.8mm (thick), the pin P15 of four phase place radio-frequency devices wherein after this encapsulation, the input 1-1 of this four phase places radio-frequency devices, this pin P4 is the output 2-3 of this four phase places radio-frequency devices, this pin P6 is this output 2-4, this pin P7 is this output 3-3, this pin P9 is this output 3-4, other pin is earth terminal, is connected publicly with outside.Such wiring, the phase difference of each adjacent output is 90 degree, easy to use.In other embodiments, the size of four phase place radio-frequency devices after encapsulation sets according to actual conditions.
That is, the order of the pin before the encapsulation of this crystal chip or after encapsulation is clockwise or arranged counterclockwise by four phase place size orders.
The above, be only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention, and all any amendments done within the spirit and principles in the present invention, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (5)

1. a phase place radio-frequency devices, it comprises: crystal chip, and be produced on the Ba Lun in this crystal chip, two couplers and two loads, it is characterized in that: two outputs of this Ba Lun are connected with the input of these two couplers respectively, the isolation end of these two couplers is connected to a load respectively.
2. a kind of four phase place radio-frequency devices according to claim 1, it is characterized in that: the input of this Ba Lun is as the input of these four phase place radio-frequency devices, the straight-through end of coupler described in one of them, coupled end are respectively as two outputs of this four phase places radio-frequency devices, the straight-through end of coupler described in another, the coupled end of this coupler as two other output of this four phase places radio-frequency devices, the phase 90 degree of the output that this four phase places radio-frequency devices is adjacent.
3. four phase place radio-frequency devices according to claim 1, is characterized in that: coupler is three-dB coupler.
4. four phase place radio-frequency devices according to claim 1, is characterized in that: this load is 50 ohm load.
5. four phase place radio-frequency devices according to claim 1 and 2, is characterized in that: the order of the pin of this crystal chip after encapsulating front or encapsulation be clockwise or arranged counterclockwise by four phase place size orders.
CN201510108701.1A 2015-03-12 2015-03-12 Four-phase RF device Pending CN104835997A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510108701.1A CN104835997A (en) 2015-03-12 2015-03-12 Four-phase RF device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510108701.1A CN104835997A (en) 2015-03-12 2015-03-12 Four-phase RF device

Publications (1)

Publication Number Publication Date
CN104835997A true CN104835997A (en) 2015-08-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510108701.1A Pending CN104835997A (en) 2015-03-12 2015-03-12 Four-phase RF device

Country Status (1)

Country Link
CN (1) CN104835997A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106848499A (en) * 2017-01-17 2017-06-13 石家庄创天电子科技有限公司 A kind of power distribution phase shifter based on LTCC Technology

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101752067A (en) * 2010-03-05 2010-06-23 北京东方信联科技有限公司 Transmission line transformer and combining and shunting device
CN104393389A (en) * 2014-11-14 2015-03-04 电子科技大学 Broadband phase shifting power divider with amplitude and phase compensating function
CN204441427U (en) * 2015-03-12 2015-07-01 深圳市研通高频技术有限公司 A kind of four phase place radio-frequency devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101752067A (en) * 2010-03-05 2010-06-23 北京东方信联科技有限公司 Transmission line transformer and combining and shunting device
CN104393389A (en) * 2014-11-14 2015-03-04 电子科技大学 Broadband phase shifting power divider with amplitude and phase compensating function
CN204441427U (en) * 2015-03-12 2015-07-01 深圳市研通高频技术有限公司 A kind of four phase place radio-frequency devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
袁安民等: "一种复合巴伦功分器电路的设计", 《微波学报》 *
陈涛等: "一种四路等功率正交功分器研究与设计", 《中国科技论文在线》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106848499A (en) * 2017-01-17 2017-06-13 石家庄创天电子科技有限公司 A kind of power distribution phase shifter based on LTCC Technology

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Application publication date: 20150812

RJ01 Rejection of invention patent application after publication