CN104835731A - Quick polishing method for large-dimension 4H,6H-SiC wafer - Google Patents
Quick polishing method for large-dimension 4H,6H-SiC wafer Download PDFInfo
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- CN104835731A CN104835731A CN201510229865.XA CN201510229865A CN104835731A CN 104835731 A CN104835731 A CN 104835731A CN 201510229865 A CN201510229865 A CN 201510229865A CN 104835731 A CN104835731 A CN 104835731A
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- 238000005498 polishing Methods 0.000 title claims abstract description 145
- 238000000034 method Methods 0.000 title claims abstract description 30
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000002270 dispersing agent Substances 0.000 claims abstract description 28
- 239000007800 oxidant agent Substances 0.000 claims abstract description 28
- 239000012530 fluid Substances 0.000 claims description 35
- 230000001590 oxidative effect Effects 0.000 claims description 27
- 239000002245 particle Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 239000004744 fabric Substances 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 8
- 239000004115 Sodium Silicate Substances 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 7
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical group [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000012286 potassium permanganate Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000002474 experimental method Methods 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010020852 Hypertonia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a quick polishing method for a large-dimension 4H,6H-SiC wafer, which belongs to the technical field of crystal processing. The quick polishing method of the invention comprises mechanical polishing and chemically mechanical polishing, wherein an alumina polishing liquid is adopted for the chemically mechanical polishing. According to the quick polishing method, the alumina polishing liquid with relatively large hardness is used for polishing silicon carbide; appropriate oxidizing agent, dispersant, alumina granularity and a relatively appropriate raw material proportion can be selected through experiments; and furthermore on condition that high machining quality and requirement for a SiC substrate is ensured, polishing speed is improved and quick polishing for the wafer is realized.
Description
Technical field
The present invention relates to a kind of fast polishing method of large scale 4H, 6H-SiC single-chip, belong to crystal pro cessing technical field.
Background technology
ARTSemiconductor silicon carbide (SiC) is as carbon (C) and the uniquely stable compound of silicon (Si), be considered to the third generation semi-conducting material representative grown up after first generation semi-conducting material Si, Ge and the second generation semi-conducting material GaAs, GaP, InP etc., be the wide bandgap semiconductor materials that development is the most ripe at present, be with a wide range of applications.
Along with the fast development of microelectric technique, more and more higher to the requirement of electronic device, the design of traditional large-scale device can not meet an urgent demand of current microminiaturization, high speed, precise treatment, and the crudy for the SiC wafer of base material is also more and more higher.But due in the SiC crystal course of processing, serious damage layer can be produced after mechanical polishing (MP), and quality of finish directly affects breakdown characteristics, interfacial state and minority carrier life time, on integrated circuit, particularly very lagre scale integrated circuit (VLSIC) impact is larger, therefore generally needs the wafer after to mechanical polishing to carry out chemical polishing.Oxidant in chemico-mechanical polishing material, dispersant carry out chemical corrosion to wafer surface under strong basicity environment, and generate the oxide layer easily removed in wafer surface, oxide layer is removed under the mechanism of abrasive material.Under chemistry and mechanical double action, wafer surface is peeled off layer by layer, finally makes wafer surface reach nano level high-quality, not damaged state.But SiC hardness is high, fragility large, and stable chemical nature, reacts hardly with the material such as strong acid, highly basic at normal temperatures, difficulty of processing is very big, adds the difficulty reaching great surface quality, so the silicon dioxide polishing comparatively commonly using matter soft at present.
Traditional chemico-mechanical polishing (CMP) method, be in silica colloid solution, add alkali, oxidant, dispersant etc. carry out polishing, in polishing process, physical reactions and chemical reaction carry out simultaneously, and chemical equation is:
Si+2NaOH+H
2O→Na
2SiO
3+2H
2↑
Although the method can make wafer surface reach nanoscale polishing precision, because silica abrasive particle hardness is little, therefore clearance, polishing efficiency extremely low (being less than 1 μm/h), seriously constrain SiC scale, mass production.
Summary of the invention
For the problems referred to above, the present invention proposes a kind of fast polishing method of large scale 4H, 6H-SiC single-chip, the damage layer after mechanical polishing can be removed fast, cut etc., ensure the fineness of wafer, evenness and roughness simultaneously, meet the crudy requirement of client to SiC substrate.In addition, the present invention can not only carry out polishing to SI (0001) face, also can process C (000-1) face.
Method of the present invention comprises mechanical polishing and chemico-mechanical polishing, and chemico-mechanical polishing adopts alundum (Al2O3) polishing fluid.
Its concrete steps are:
(1) mechanical polishing;
(2) chemico-mechanical polishing
1) Xiang Shuizhong adds oxidant, makes it fully mix by stirring;
2) in above-mentioned mixed solution, Al is added
2o
3polishing fluid and dispersant, be uniformly mixed;
3) in above-mentioned solution, KOH particle adjust ph to 9 ~ 14 are added;
4) the ultrasonic 10-20 minute of normal temperature, composition is mixed fully, and aluminium oxide particles is evenly distributed;
5) the soft polishing cloth polishing of matter is adopted, wafer pressure 200-600g/cm
2, polish temperature is 20-80 DEG C;
(3) eyeglass after chemical polishing is cleaned.
Mechanical polishing process of the present invention carries out with reference to patent 200610043816.8.After mechanical polishing, wafer surface can remain macroscopic cut and the sightless damage layer of naked eyes.Therefore the present invention needs the wafer after to mechanical polishing to carry out further chemico-mechanical polishing.
That chemico-mechanical polishing of the present invention adopts is alundum (Al2O3) polishing fluid, wherein Al
2o
3the granule-morphology of abrasive material is round and smooth relative to diamond abrasive, so wafer surface roughness can be made to reach nano-precision, meets the index request such as surface scratch, roughness.And due to Al
2o
3abrasive hardness is higher than silicon dioxide, thus remove speed, polishing efficiency comparatively conventional method have and greatly improve, can be good at meeting suitability for industrialized production.
During chemico-mechanical polishing of the present invention, pH value is 9-14, described Al
2o
3polishing fluid mass fraction is 1%-50%, and granularity is 50nm-500nm.If pH value is lower than 9, chemical corrosion effect is very little, affects polishing clearance; If pH value is higher than 14, polishing fluid alkalescence is excessively strong, and surface corrosion is too fast, and mechanism can not be removed in time, and the complete rear surface of polishing can remain etch pit, affects finishing polish quality.Abrasive concentration is lower, granularity is higher, and polishing efficiency is higher, but quality of finish can reduce; Otherwise can polishing efficiency be affected, therefore need to select suitable concentration and granularity.
In order to even, a stable suspension can be formed after ensureing Al2O3 polishing fluid, oxidant, dispersant, described water, Al
2o
3the volume ratio of polishing fluid, oxidant, dispersant is 0.5:1:(0.1 ~ 2): (0.1 ~ 0.5).Oxidant can accelerate wafer surface chemical reaction, is conducive to mechanism grinding and removes, improve the removal speed of CMP.Dispersant can increase the suspension of feed liquid, improves the uniformity of feed liquid.
Oxidant of the present invention is hydrogen peroxide or clorox or potassium permanganate or nitric acid.Described dispersant is sodium metasilicate.The polishing cloth adopted is polyurethane resin or nonwoven fabrics polishing cloth.
Due to Al
2o
3polishing fluid is easy to crystallization in the basic conditions, and therefore the present invention is by Al
2o
3adopt potassium hydroxide pellet adjust ph 9 ~ 14 before being about to use after the mixing of polishing fluid, dispersant and oxidant.
Increase polish pressure, can polishing efficiency be improved, but hypertonia, and plane of crystal quality can be deteriorated, and also increases the risk of sliver accordingly, and therefore the present invention is when carrying out chemico-mechanical polishing, wafer pressure 200-600g/cm
2.Suitable raising temperature, can improve the chemism of feed liquid, but temperature is too high, affects the chemical stability of feed liquid, and the too high surface smoothness that can affect wafer of local temperature, and therefore, chemico-mechanical polishing temperature is 20-80 DEG C.
The alundum (Al2O3) polishing fluid mechanism adopted due to the present invention is comparatively strong, can not only carry out polishing, also can process C (000-1) face SI (0001) face.
In sum, the alundum (Al2O3) polishing fluid polishing carborundum that the present invention adopts hardness larger, and select appropriate oxidant, dispersant, aluminum oxide grain size and comparatively suitable pulp furnish by experiment, can when ensureing that the crudy of SiC substrate requires, improve polishing velocity, realize the fast polishing to wafer.
Accompanying drawing explanation
The CS result of Fig. 1 for adopting method described in the embodiment of the present invention 1 to carry out SiC single crystal sheet after chemico-mechanical polishing; As can be seen from the figure the polished wafer adopting the present invention to obtain does not have manufacturing deficiency;
The AFM result of Fig. 2 for adopting method described in the embodiment of the present invention 1 to carry out SiC single crystal sheet after chemico-mechanical polishing; As can be seen from the figure the polished wafer roughness Ra=0.149nm adopting the present invention to obtain, reaches required precision.
Embodiment
Embodiment 1
A fast polishing method for large scale 4H, 6H-SiC single-chip, comprises mechanical polishing and chemico-mechanical polishing, and chemico-mechanical polishing adopts alundum (Al2O3) polishing fluid, and its concrete steps are:
(1) mechanical polishing;
(2) chemico-mechanical polishing
1) Xiang Shuizhong adds oxidant, makes it fully mix by stirring;
2) in above-mentioned mixed solution, Al is added
2o
3polishing fluid and dispersant, be uniformly mixed;
3) in above-mentioned solution, adding KOH particle adjust ph is 9;
4) ultrasonic 10 minutes of normal temperature, composition is mixed fully, and aluminium oxide particles is evenly distributed;
5) the soft polishing cloth polishing of matter is adopted, wafer pressure 200g/cm
2, polish temperature is 80 DEG C;
(3) eyeglass after chemical polishing is cleaned.
Described water, Al
2o
3the volume ratio of polishing fluid, oxidant, dispersant is 0.5:1:0.1:0.1;
Described Al
2o
3polishing fluid mass fraction is 1%, and granularity is 50nm.
Described oxidant is hydrogen peroxide.
Described dispersant is sodium metasilicate.
Embodiment 2
A fast polishing method for large scale 4H, 6H-SiC single-chip, comprises mechanical polishing and chemico-mechanical polishing, and chemico-mechanical polishing adopts alundum (Al2O3) polishing fluid, and its concrete steps are:
(1) mechanical polishing;
(2) chemico-mechanical polishing
1) Xiang Shuizhong adds oxidant, makes it fully mix by stirring;
2) in above-mentioned mixed solution, Al is added
2o
3polishing fluid and dispersant, be uniformly mixed;
3) in above-mentioned solution, adding KOH particle, to carry out adjust ph be 10;
4) ultrasonic 15 minutes of normal temperature, composition is mixed fully, and aluminium oxide particles is evenly distributed;
5) the soft polishing cloth polishing of matter is adopted, wafer pressure 600g/cm
2, polish temperature is 20 DEG C;
(3) eyeglass after chemical polishing is cleaned.
Described water, Al
2o
3the volume ratio of polishing fluid, oxidant, dispersant is 0.5:1:2:0.5;
Described Al
2o
3polishing fluid mass fraction is 25%, and granularity is 500nm.
Described oxidant is clorox.
Described dispersant is sodium metasilicate.
Embodiment 3
A fast polishing method for large scale 4H, 6H-SiC single-chip, comprises mechanical polishing and chemico-mechanical polishing, and chemico-mechanical polishing adopts alundum (Al2O3) polishing fluid, and its concrete steps are:
(1) mechanical polishing;
(2) chemico-mechanical polishing
1) Xiang Shuizhong adds oxidant, makes it fully mix by stirring;
2) in above-mentioned mixed solution, Al is added
2o
3polishing fluid and dispersant, be uniformly mixed;
3) in above-mentioned solution, adding KOH particle, to carry out adjust ph be 11;
4) ultrasonic 20 minutes of normal temperature, composition is mixed fully, and aluminium oxide particles is evenly distributed;
5) the soft polishing cloth polishing of matter is adopted, wafer pressure 400g/cm
2, polish temperature is 50 DEG C;
(3) eyeglass after chemical polishing is cleaned.
Described water, Al
2o
3the volume ratio of polishing fluid, oxidant, dispersant is 0.5:1:0.5:0.3;
Described Al
2o
3polishing fluid mass fraction is 12%, and granularity is 225nm.
Described oxidant is potassium permanganate.
Described dispersant is sodium metasilicate.
Embodiment 4
A fast polishing method for large scale 4H, 6H-SiC single-chip, comprises mechanical polishing and chemico-mechanical polishing, and chemico-mechanical polishing adopts alundum (Al2O3) polishing fluid, and its concrete steps are:
(1) mechanical polishing;
(2) chemico-mechanical polishing
1) Xiang Shuizhong adds oxidant, makes it fully mix by stirring;
2) in above-mentioned mixed solution, Al is added
2o
3polishing fluid and dispersant, be uniformly mixed;
3) in above-mentioned solution, adding KOH particle, to carry out adjust ph be 12;
4) ultrasonic 10 minutes of normal temperature, composition is mixed fully, and aluminium oxide particles is evenly distributed;
5) the soft polishing cloth polishing of matter is adopted, wafer pressure 300g/cm
2, polish temperature is 35 DEG C;
(3) eyeglass after chemical polishing is cleaned.
Described water, Al
2o
3the volume ratio of polishing fluid, oxidant, dispersant is 0.5:1:1.0:0.2;
Described Al
2o
3polishing fluid mass fraction is 35%, and granularity is 140nm.
Described oxidant is nitric acid.
Described dispersant is sodium metasilicate.
Embodiment 5
A fast polishing method for large scale 4H, 6H-SiC single-chip, comprises mechanical polishing and chemico-mechanical polishing, and chemico-mechanical polishing adopts alundum (Al2O3) polishing fluid, and its concrete steps are:
(1) mechanical polishing;
(2) chemico-mechanical polishing
1) Xiang Shuizhong adds oxidant, makes it fully mix by stirring;
2) in above-mentioned mixed solution, Al is added
2o
3polishing fluid and dispersant, be uniformly mixed;
3) in above-mentioned solution, adding KOH particle, to carry out adjust ph be 14;
4) ultrasonic 20 minutes of normal temperature, composition is mixed fully, and aluminium oxide particles is evenly distributed;
5) the soft polishing cloth polishing of matter is adopted, wafer pressure 500g/cm
2, polish temperature is 65 DEG C;
(3) eyeglass after chemical polishing is cleaned.
Described water, Al
2o
3the volume ratio of polishing fluid, oxidant, dispersant is 0.5:1:1.5:0.4;
Described Al
2o
3polishing fluid mass fraction is 30%, and granularity is 360nm.
Described oxidant is clorox.
Described dispersant is sodium metasilicate.
Comparative example
The embodiment of the present invention 3 and 4 and traditional silicon dioxide CMP method are contrasted, specific as follows:
Can find out in the table: two kinds of finishing method polishing same wafer, at the same pressure, finishing method of the present invention is more obvious than traditional finishing method clearance fast a lot, and roughness difference is little, all can meet instructions for use.
Claims (6)
1. a fast polishing method for large scale 4H, 6H-SiC single-chip, comprises mechanical polishing and chemico-mechanical polishing, it is characterized in that: chemico-mechanical polishing adopts alundum (Al2O3) polishing fluid.
2. finishing method according to claim 1, is characterized in that: its concrete steps are:
(1) mechanical polishing;
(2) chemico-mechanical polishing
1) Xiang Shuizhong adds oxidant, makes it fully mix by stirring;
2) in above-mentioned mixed solution, Al is added
2o
3polishing fluid and dispersant, be uniformly mixed;
3) in above-mentioned solution, KOH particle adjust ph to 9 ~ 14 are added;
4) the ultrasonic 10-20 minute of normal temperature, composition is mixed fully, and aluminium oxide particles is evenly distributed;
5) the soft polishing cloth polishing of matter is adopted, wafer pressure 200-600g/cm
2, polish temperature is 20-80 DEG C;
(3) eyeglass after chemical polishing is cleaned.
3. finishing method according to claim 2, is characterized in that: described water, Al
2o
3the volume ratio of polishing fluid, oxidant, dispersant is 0.5:1:(0.1 ~ 2): (0.1 ~ 0.5):.
4. finishing method according to claim 2, is characterized in that: described oxidant is hydrogen peroxide or clorox or potassium permanganate or nitric acid.
5. finishing method according to claim 2, is characterized in that: described dispersant is sodium metasilicate.
6. finishing method according to claim 2, is characterized in that: described Al
2o
3polishing fluid mass fraction is 1%-50%, and granularity is 50nm-500nm.
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| CN201510229865.XA CN104835731A (en) | 2015-05-05 | 2015-05-05 | Quick polishing method for large-dimension 4H,6H-SiC wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510229865.XA CN104835731A (en) | 2015-05-05 | 2015-05-05 | Quick polishing method for large-dimension 4H,6H-SiC wafer |
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| CN104835731A true CN104835731A (en) | 2015-08-12 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105950022A (en) * | 2016-07-22 | 2016-09-21 | 成都贝瑞光电科技股份有限公司 | Compound polishing liquid |
| CN108381379A (en) * | 2018-04-13 | 2018-08-10 | 中国电子科技集团公司第四十六研究所 | The polishing method that aluminum-nitride single crystal piece electrobrightening and chemically mechanical polishing are combined |
| CN109129028A (en) * | 2017-06-15 | 2019-01-04 | 北京天科合达半导体股份有限公司 | A kind of processing method of efficient silicon carbide wafer |
| CN109509701A (en) * | 2018-11-02 | 2019-03-22 | 武汉电信器件有限公司 | A kind of abrasive polishing method and corresponding wafer of wafer |
| CN109571154A (en) * | 2018-12-28 | 2019-04-05 | 天津洙诺科技有限公司 | A kind of polishing method of 4H silicon carbide wafer |
| CN109732462A (en) * | 2018-12-28 | 2019-05-10 | 江苏澳洋顺昌集成电路股份有限公司 | A kind of processing method of large-sized wafer |
| CN112222953A (en) * | 2020-09-04 | 2021-01-15 | 山东国晶新材料有限公司 | Method for polishing surface of clamping rod |
| CN113146451A (en) * | 2021-03-26 | 2021-07-23 | 中锗科技有限公司 | Polishing method of 1 inch germanium processing piece |
| CN115124927A (en) * | 2022-07-18 | 2022-09-30 | 大连理工大学 | Green chemical mechanical polishing solution for silicon carbide crystals |
| WO2023106358A1 (en) * | 2021-12-10 | 2023-06-15 | Fujimi Incorporated | Polishing compositions for silicon carbide surfaces and methods of use thereof |
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